CN106291793B - A kind of short-wave infrared narrow band filter and preparation method thereof - Google Patents
A kind of short-wave infrared narrow band filter and preparation method thereof Download PDFInfo
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- CN106291793B CN106291793B CN201610971376.6A CN201610971376A CN106291793B CN 106291793 B CN106291793 B CN 106291793B CN 201610971376 A CN201610971376 A CN 201610971376A CN 106291793 B CN106291793 B CN 106291793B
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- 238000002360 preparation method Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000012528 membrane Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 7
- 150000002500 ions Chemical class 0.000 claims description 26
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000004408 titanium dioxide Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- 230000002745 absorbent Effects 0.000 claims description 6
- 239000002250 absorbent Substances 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 229920000742 Cotton Polymers 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000005238 degreasing Methods 0.000 claims description 3
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 3
- 229960004756 ethanol Drugs 0.000 claims description 3
- 235000019441 ethanol Nutrition 0.000 claims description 3
- 239000007888 film coating Substances 0.000 claims description 3
- 238000009501 film coating Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 230000003595 spectral effect Effects 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000000630 rising effect Effects 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 30
- 238000013461 design Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 239000005315 stained glass Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The invention discloses a kind of short-wave infrared narrow band filters characterized by comprising substrate and the positive membrane system and reverse side membrane system that are formed in substrate both side surface, positive membrane system are as follows: A/ (HL)4L(HL)8L(HL)8L(HL)41.64H0.64L/S, reverse side membrane system are as follows: A/ (0.5HL0.5H)11α(0.5HL0.5H)12β(0.5LH0.5L)7γ(0.5LH0.5L)10ω(0.5LH0.5L)10/S；Symbol meaning in membrane system: A is air, and S is H-K9L substrate of glass, and H is that high-index material five aoxidizes two titaniums, and L is low-index material silica, and α, β, γ and ω respectively indicate the multiple of each membrane system central wavelength and central wavelength.There is optical filter of the present invention the infrared narrow band filter that central wavelength is 1240nm to penetrate spectrum, the rising and falling edges steepness of transmission bands is less than 0.5%, passband mean transmissivity is up to 80%, rejection zone mean transmissivity is less than 0.5%, limitation spectral region can be played, inhibit background interference, improves target resolution.
Description
Technical field
The invention belongs to optical element design technical fields, and the 1240nm that 80K low temperature environment uses can be met by being related to one kind
Short-wave infrared narrow band filter and preparation method thereof.
Background technique
Short-wave infrared narrow band filter all has broad application prospects in terms of optic analytical instrument, optical detector, main
It is used for imaging observation over the ground and spectrum analysis monitoring, China's high-resolution earth observation systems key special subjects to be also narrow to shortwave
Band optical filter proposes research and development demand.
Big visual field infrared multispectral scanner short-wave infrared narrow band filter, it is desirable that passband mean transmissivity is high, inhibits
Band cut-off depth is deep, passband ripple is small, cutoff range is wide, is applicable to 80K low temperature and ground environment condition, has height can
By property and high stability.
It is used before being packaged in detector due to short-wave infrared narrow band filter, working environment is special, need to meet from low
The instantaneous temperature of warm limiting value 80K to 80 DEG C of high temperature limit value impacts, and prepares optical filter using conventional method, it may appear that under low temperature
The phenomenon that filter center wave length shift and film layer fall off, low temperature short-wave infrared narrow band filter are always what optical thin film was studied
Emphasis.
Summary of the invention
(1) goal of the invention
The object of the present invention is to provide a kind of short-wave infrared narrow band filters and preparation method thereof, to improve spectral scan
Instrument resolution ratio and image quality.
(2) technical solution
In order to solve the above technical problem, the present invention provides a kind of short-wave infrared narrow band filters comprising: 2 He of substrate
The positive membrane system and reverse side membrane system being formed in 2 both side surface of substrate, positive membrane system are as follows: A/ (HL)4L(HL)8L(HL)8L(HL)41.64H0.64L/S, reverse side membrane system are as follows: A/ (0.5HL0.5H)11α(0.5HL0.5H)12β(0.5LH0.5L)7γ
(0.5LH0.5L)10ω(0.5LH0.5L)10/S；Symbol meaning in membrane system: A is air, and S is H-K9L substrate of glass, and H is height
Refraction materials five aoxidize two titaniums, and L is low-index material silica, and α, β, γ and ω respectively indicate each membrane system central wavelength
With the multiple of central wavelength.
Wherein, it is 20mm, the K9 glass with a thickness of 0.5mm, surface aperture N≤3, part that the substrate 2, which selects diameter,
Aperture Δ N≤0.5, nonparallelism < 30 ", surface smoothness B=V.
Wherein, in the reverse side membrane system, α=0.845, β=1.55, γ=2.2, ω=2.7.
The present invention also provides a kind of preparation methods of short-wave infrared narrow band filter comprising following steps:
S1: vacuum chamber cleaning；
S2: substrate cleans before plated film；
S3: vacuum chamber prepares
The preset Coating Materials in vacuum chamber electron gun crucible；
S4: film layer is coated with
Ion source is opened, with ion beam cleaning substrate, ion source, as working gas, utilizes Assisted by Ion Beam using argon gas
Electron beam evaporation methods carry out film deposition.
Wherein, in the step S4, during film layer is coated with, when titanium dioxide film deposits, ion source argon gas flow 18 ±
2sccm, oxygen gas 25 ± 3sccm of flow, ion source beam pressure 180V~250V, ion source line 80V~120V, control deposition
Rate 0.2-0.5nm/s；When silicon dioxide film deposits, ion source 18 ± 2sccm of argon gas flow, oxygen gas flow 12 ±
2sccm, ion source beam pressure 180V~220V, ion source line 80V~110V, deposition rate 0.5-1nm/s.
Wherein, in the step S4, the argon working gas purity of the ion source is not less than 99.995%, gas flow
18sccm-22sccm。
Wherein, in the step S4, before film layer is coated with, substrate is heated to 200 ± 10 DEG C, and keep 1h.
Wherein, in the step S1, vacuum chamber of film coating machine protecting screen, electrode, baffle and tooling are cleaned with sand-blasting machine, then
Dehydrated alcohol, which is dipped in, with absorbent gauze cleans vacuum chamber；In the step S2, volume ratio successively is dipped in absorbent gauze and degreasing cotton
Ethyl alcohol, the ether mixed solution of 1:1 cleans substrate surface.
Wherein, in the step S3, preset Coating Materials purity is preset not less than 99.99% in the electron gun crucible
The amount of Coating Materials meets: 1000mm coating machine, titanium dioxide, silica are respectively 100g, 150g.
Wherein, further include step S5: substrate cooling is not less than 2 × 10 in vacuum-3Pa cools to 80 ± 8 DEG C, closes and takes out
Vacuum system, vacuum chamber take out deposition eyeglass after dropping to room temperature.
(3) beneficial effect
Short-wave infrared narrow band filter and preparation method thereof provided by above-mentioned technical proposal, optical filter reach excellent skill
Art index, without using coloured glass, background depth is high, penetrates light with the infrared narrow band filter that central wavelength is 1240nm
Spectrum, the rising and falling edges steepness of transmission bands is less than 0.5%, and for passband mean transmissivity up to 80%, rejection zone mean transmissivity is small
In 0.5%, limitation spectral region can be played, inhibits background interference, improves target resolution；Filter performance is stablized, wavelength drift
Shifting amount is 0.0036nm/ DEG C, i.e., from 80 DEG C to 80K wavelength to shortwave drift about 1nm, is resistant to 80K to 80 DEG C of instantaneous temperature punching
It hits, has realized engineering application.
Detailed description of the invention
Fig. 1 is that 1240nm narrow band filter film layer front and back arranges schematic diagram, and the face mask series wherein 1 face is positive, 2 be base
Plate, 3 faces are reverse side membrane system.
Fig. 2 is the reality of the present embodiment optical filter 1240nm narrow band filter spectral transmittance and wavelength at low temperature (80K)
Example curve.
Specific embodiment
To keep the purpose of the present invention, content and advantage clearer, with reference to the accompanying drawings and examples, to tool of the invention
Body embodiment is described in further detail.
In order to solve the technical problems existing in the prior art, the present invention develops a kind of middle cardiac wave by design, test
The short-wave infrared narrow band filter of a length of 1240nm, using K9 glass as substrate, five two titaniums of oxidation and silica are film layer material for it
Material is prepared using vacuum film deposition method, prepares optical filter bandwidth 20nm, transmitance 80%, in all band spectral region,
In addition to main peak passband, full cut-off, product optical property, the physical strength of film layer and environmental suitability meet actual operation requirements.
Specifically, shown in referring to Fig.1, the present embodiment short-wave infrared narrow band filter includes substrate 2 and is formed in 2 liang of substrate
Positive membrane system and reverse side membrane system on side surface, positive membrane system are as follows: A/ (HL)4L(HL)8L(HL)8L(HL)41.64H 0.64L/
S, reverse side membrane system are as follows: A/ (0.5HL0.5H)11α(0.5HL0.5H)12β(0.5LH0.5L)7γ(0.5LH0.5L)10ω
(0.5LH0.5L)10/S；Symbol meaning in membrane system: A is air, and S is H-K9L substrate of glass, and H is five oxygen of high-index material
Change two titaniums, L is low-index material silica, and α, β, γ and ω respectively indicate times of each membrane system central wavelength and central wavelength
Number.
Wherein, it is 20mm, the K9 glass with a thickness of 0.5mm, surface aperture N≤3, local aperture that substrate 2, which selects diameter,
Δ N≤0.5, nonparallelism < 30 ", surface smoothness B=V；
In reverse side membrane system, α=0.845, β=1.55, γ=2.2, ω=2.7.
The advantages of the present embodiment membrane system is to can be avoided single face film thickness to increase to film caused by optical filter after plated film
The problems such as ply stress, face type, it is expected to so that cumulative stress is intended to zero, while to avoid influence of the membrane stress to substrate face type,
Offset two sides depositional coating stress in Film Design and membrane-film preparation process, to realize that optical filter overall stress goes to zero.
Short-wave infrared narrow band filter based on above structure, preparation method includes the following steps:
The first step, vacuum chamber cleaning
Vacuum chamber of film coating machine protecting screen, electrode, baffle and tooling are cleaned with sand-blasting machine, after cleaning, is cleaned part surface not
There must be film layer attachment, then dip in dehydrated alcohol with absorbent gauze and clean vacuum chamber.
Second step cleans before plated film
Successively dip in wet ethyl alcohol with absorbent gauze and degreasing cotton, ether mixed solution (volume ratio 1:1) cleans surface, be used in combination
" method of breathing out " examines film surface, until no greasy dirt, grit, scratch.
Third step, vacuum chamber prepare
Suitable Coating Materials titanium dioxide, silica are put into electron gun crucible (for 1000mm coating machine, two
Titanium oxide, silica are respectively 100g, 150g), Coating Materials purity is not less than 99.99%, substrate surface is blown with ear washing bulb,
Door for vacuum chamber is closed immediately after.
4th step, film layer are coated with
Vacuum degree is not less than 2 × 10-3Pa opens rotation bracket switch, and rotational workpieces frame opens baking, sets baking temperature.
Electron gun deflection power, filament supply and rifle high pressure are successively opened again.
Ion source is opened, with ion beam cleaning substrate 5min, for ion source using argon gas as working gas, working gas is pure
Degree is not less than 99.995%, gas flow 18sccm-22sccm (optimum value 20sccm), is steamed using the electron beam of Assisted by Ion Beam
Electroplating method carries out film deposition.
Substrate is heated to 200 ± 10 DEG C, and keeps 1h.
By design membrane system, titanium dioxide and silica are alternately deposited onto two faces of substrate.Coating Materials deposition
Parameter is as follows:
(1) titanium dioxide film deposits
Ion source 18 ± 2sccm of argon gas flow, oxygen gas 25 ± 3sccm of flow, ion source beam pressure 180V~
250V, ion source line 80V~120V, adjust electron gun current, and full and uniform fritting coating materials opens baffle, control deposition speed
Rate 0.2-0.5nm/s；
Titanium dioxide film deposition is carried out using this technological parameter, the gather density of film layer can be improved, controls film tensile stress
With the transformation of compression, the thermal refractive index coefficient and thermal expansion coefficient low temperature shift of titanium dioxide are avoided.
(2) silicon dioxide film deposits
Ion source 18 ± 2sccm of argon gas flow, oxygen gas 12 ± 2sccm of flow, ion source beam pressure 180V~
220V, ion source line 80V~110V, adjust electron gun current, and full and uniform fritting coating materials opens baffle, deposition rate
0.5-1nm/s；
Silicon dioxide film deposition is carried out using this technological parameter, the gather density of film layer can be improved, it is high to improve silicon oxide film
Low temperature environment adaptability.
5th step, substrate cooling.
It is not less than 2 × 10 in vacuum-3Pa cools to 80 ± 8 DEG C, closes pumped vacuum systems, and vacuum chamber takes after dropping to room temperature
Eyeglass is deposited out.
Referring to shown in Fig. 2, the present embodiment filter performance is stablized, and wavelength shift is 0.0036nm/ DEG C, i.e., from 80 DEG C to
80K wavelength is resistant to 80K to 80 DEG C of instantaneous temperature impact, has realized engineering application to shortwave drift about 1nm.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (6)
1. a kind of preparation method of short-wave infrared narrow band filter, the short-wave infrared narrow band filter includes: substrate (2) and shape
At the positive membrane system and reverse side membrane system in substrate (2) both side surface, positive membrane system are as follows: A/ (HL)4L(HL)8L(HL)8L(HL)41.64H0.64L/S, reverse side membrane system are as follows: A/ (0.5HL0.5H)11α(0.5HL0.5H)12β(0.5LH0.5L)7γ
(0.5LH0.5L)10ω(0.5LH0.5L)10/S；Symbol meaning in membrane system: A is air, and S is substrate (2), and substrate (2) is selected
H-K9L substrate of glass, H are high-index material titanium dioxide, and L is low-index material silica, α, β, γ and ω difference
Indicate optical thickness coefficient corresponding to each film layer, which is characterized in that the preparation method comprises the following steps:
S1: vacuum chamber cleaning；
S2: base-plate cleaning before plated film；
S3: vacuum chamber prepares
The preset Coating Materials in vacuum chamber electron gun crucible；
S4: film layer is coated with
Ion source is opened, with ion beam cleaning substrate, ion source, as working gas, utilizes the electricity of Assisted by Ion Beam using argon gas
Beamlet evaporation coating method carries out film deposition；
In the step S4, during film layer is coated with, in deposition oxide film, also need to be filled with oxygen as reaction gas；Dioxy
When changing titanium film deposition, ion source 18 ± 2sccm of argon gas flow, oxygen gas 25 ± 3sccm of flow, ion source beam pressure 180V
~250V, ion source line 80V~120V control deposition rate 0.2-0.5nm/s；When silicon dioxide film deposits, ion source argon
Gas 18 ± 2sccm of gas flow, oxygen gas 12 ± 2sccm of flow, ion source beam pressure 180V~220V, ion source line 80V
~110V, deposition rate 0.5-1nm/s.
2. the preparation method of short-wave infrared narrow band filter as described in claim 1, which is characterized in that in the step S4,
The argon working gas purity of the ion source is not less than 99.995%, gas flow 18sccm-22sccm.
3. the preparation method of short-wave infrared narrow band filter as described in claim 1, which is characterized in that in the step S4,
Before film layer is coated with, 200 ± 10 DEG C are heated the substrate to, and keep 1h.
4. the preparation method of short-wave infrared narrow band filter as described in claim 1, which is characterized in that in the step S1,
Vacuum chamber of film coating machine protecting screen, electrode, baffle and tooling are cleaned with sand-blasting machine, then dehydrated alcohol is dipped in absorbent gauze and cleans very
Empty room；In the step S2, the ethyl alcohol of volume ratio 1:1 successively is dipped in absorbent gauze and degreasing cotton, ether mixed solution is cleaned
Substrate surface.
5. the preparation method of short-wave infrared narrow band filter as described in claim 1, which is characterized in that in the step S3,
Preset Coating Materials purity is not less than 99.99% in the electron gun crucible, and the amount of preset Coating Materials meets: 1000mm plated film
Machine, titanium dioxide, silica are respectively 100g, 150g.
6. the preparation method of short-wave infrared narrow band filter as described in claim 1, which is characterized in that further include step S5:
Substrate cooling is not less than 2 × 10 in vacuum-3Pa cools to 80 ± 8 DEG C, closes pumped vacuum systems, and vacuum chamber takes after dropping to room temperature
Eyeglass is deposited out.
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