CN109143440A - 3.50~3.90 μm of medium-wave infrared micro light-filters and preparation method thereof - Google Patents
3.50~3.90 μm of medium-wave infrared micro light-filters and preparation method thereof Download PDFInfo
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- CN109143440A CN109143440A CN201811308604.7A CN201811308604A CN109143440A CN 109143440 A CN109143440 A CN 109143440A CN 201811308604 A CN201811308604 A CN 201811308604A CN 109143440 A CN109143440 A CN 109143440A
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- zinc sulphide
- germanium
- membrane system
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000005083 Zinc sulfide Substances 0.000 claims abstract description 71
- 239000012528 membrane Substances 0.000 claims abstract description 69
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 59
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 59
- 230000003287 optical effect Effects 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 7
- 238000001704 evaporation Methods 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 238000012544 monitoring process Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 abstract description 23
- 238000002834 transmittance Methods 0.000 abstract description 8
- 238000001816 cooling Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 52
- 230000005540 biological transmission Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229940105963 yttrium fluoride Drugs 0.000 description 3
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000007405 data analysis Methods 0.000 description 2
- 229960000935 dehydrated alcohol Drugs 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
Abstract
The invention belongs to field of surface technology, and in particular to 3.50~3.90 μm of medium-wave infrared micro light-filters of one kind and preparation method thereof.The optical filter includes that silicon base and long and short wave lead to membrane system；It is (0.35H0.7L0.35H) ^9 (0.5HL0.5H) ^13, central wavelength 2800nm that long wave, which leads to film structure,；Short-pass film structure is (0.5LH0.5L) ^13, central wavelength 4650nm；H and L is respectively germanium film layer and zinc sulphide film layer；By heating silicon base in vacuum, long and short wave is deposited in substrate two sides using the electron gun evaporation method of Assisted by Ion Beam and leads to membrane system, is made after cooling.The optical filter has high transmittance in 3.50~3.90 μm of spectral coverages, in 0.80~3.30 μm and 4.10~5.50 μm of wide cut-offs of spectral coverage, and can use under low temperature (80K) again, and meets the splicing in space micro combined filters and require.
Description
Technical field
The invention belongs to optical film technology fields, and in particular to a kind of 3.50~3.90 μm of medium-wave infrared micro light-filters
And preparation method thereof.
Background technique
At present in the space micro combined filters of remote sensing system, need a kind of to meet claimed below crucial filter
Piece: (1) in 3.50~3.90 μm spectral coverages there is high transmittance；(2) 0.80~3.30 μm and 4.10~5.50 μm of spectral coverages have suppression
The effect of optical signal processed, therefore in 0.80~3.30 μm and 4.10~5.50 μm of wide cut-offs of spectral coverage, to reduce the shadow of signal noise
It rings；(3) it can be used at low temperature (80K)；(4) size of foundation base is small, and the angle between all faces of substrate is right angle, and there is no fall
Angle, film layer do not lead to the problem of skinning in splicing or fall the film qualities such as film, to meet in the space micro combined filters
In splicing requirement.
It retrieves the documents (CN103245994B) being closer to and discloses a kind of LONG WAVE INFRARED of 8~8.4 μm of transmissions
Optical filter and preparation method, the optical filter include germanium substrate, the logical membrane system of substrate side long wave and other side short-pass membrane system；Long wave
Logical film structure are as follows: (0.5LH0.5L) ^10 (0.57L1.14H0.57L) ^6, central wavelength 5680nm, short-pass membrane system knot
Structure are as follows: (LH) ^10, central wavelength 10900nm, L and H are followed successively by zinc sulphide and lead telluride film layer respectively；By in a vacuum
Substrate is heated, long and short wave is deposited in substrate two sides respectively with thermal resistance evaporation in the case where ion source leads to argon gas and leads to membrane system, made after cooling
?.However, medium-wave infrared optical filter cut-off width relative narrower disclosed above, is unable to satisfy and has in 3.50~3.90 μm of spectral coverages
There is high transmittance, the medium-wave infrared optical filter of the wide cut-off of spectral coverage at 0.80~3.30 μm and 4.10~5.50 μm；Meanwhile it is existing
Medium-wave infrared optical filter is mainly formed by the less two oxides of height refractive index, and there are film layer number is more and film layer
The features such as stress is big, therefore the problems such as film layer fracture and skinning will occur being coated on miniature substrate, it is not able to satisfy in remote sensing
Splicing and low temperature requirement in the space micro combined filters of detection system.
Summary of the invention
The invention aims to solve the above problems, the present invention provides a kind of saturating with height in 3.50~3.90 μm of spectral coverages
Rate is crossed, in 0.80~3.30 μm and 4.10~5.50 μm of wide cut-offs of spectral coverage, and can use under low temperature (80K) again 3.50~
3.90 μm of medium-wave infrared micro light-filters and preparation method thereof.
Specific technical solution is as follows:
A kind of 3.50~3.90 μm of short-wave infrared optical filters lead to membrane system by the long wave of the side of silicon base, the silicon base,
The short-pass membrane system of the other side of the silicon base forms；
The long wave leads to membrane system, and by germanium (Ge) film layer and zinc sulphide (ZnS) film layer, alternately superposition is formed, and the long wave leads to film
The structure of system are as follows: (0.35H0.7L0.35H) ^9 (0.5HL0.5H) ^13, central wavelength 2800nm；H is germanium film layer, and 0.5 is
Germanium thicknesses of layers corresponds to the coefficient of basic thickness, and 0.5H indicates that zinc sulphide thicknesses of layers is 0.5 basic thickness, and L is zinc sulphide
Film layer, 1 corresponds to the coefficient of basic thickness for zinc sulphide thicknesses of layers, and L indicates that zinc sulphide thicknesses of layers is 1 basic thickness, and 9 are
The periodicity of basic membrane stack (0.35H0.7L0.35H), 13 be the periodicity of basic membrane stack (0.5HL0.5H)；
By germanium and zinc sulphide film layer, alternately superposition forms the short-pass membrane system, the structure of the short-pass membrane system are as follows:
(0.5LH0.5L) ^13, central wavelength 4650nm；Wherein, H is germanium film layer, and 1 is for what germanium thicknesses of layers corresponded to basic thickness
Number, H indicate that germanium thicknesses of layers is 1 basic thickness, and H indicates that germanium thicknesses of layers is 1 basic thickness, and L is zinc sulphide film layer,
0.5 corresponds to the coefficient of basic thickness for zinc sulphide thicknesses of layers, and 0.5L indicates that zinc sulphide thicknesses of layers is 0.5 basic thickness,
13 be the periodicity of basic membrane stack (0.5LH0.5L)；
Substantially four points of the optical thickness central wavelength for leading to membrane system or the short-pass membrane system with a thickness of the long wave
One of.
In some embodiments, the specification of the silicon base is 29.5mm*1.6mm*1.2mm, and the depth of parallelism is less than 30 ".
In some embodiments, the logical membrane system of the long wave is as shown in table 1, and the film layer that the number of plies is 1 is outermost layer, and the number of plies is
45 film deposition is innermost layer in the silicon base.
1 long wave of table leads to membrane system
In some embodiments, short-pass membrane system is as shown in table 2, and the film layer that the number of plies is 1 is outermost layer, and the number of plies is 27
Film deposition is innermost layer on a silicon substrate.
2 short-pass membrane system of table
| The number of plies | Film material | Thicknesses of layers/nm |
| 1 | Zinc sulphide | 659.9517 |
| 2 | Germanium | 303.1252 |
| 3 | Zinc sulphide | 527.663 |
| 4 | Germanium | 303.4779 |
| 5 | Zinc sulphide | 506.0659 |
| 6 | Germanium | 286.562 |
| 7 | Zinc sulphide | 512.5365 |
| 8 | Germanium | 287.3251 |
| 9 | Zinc sulphide | 508.7516 |
| 10 | Germanium | 281.9393 |
| 11 | Zinc sulphide | 517.6755 |
| 12 | Germanium | 279.3932 |
| 13 | Zinc sulphide | 503.467 |
| 14 | Germanium | 290.1305 |
| 15 | Zinc sulphide | 512.0884 |
| 16 | Germanium | 273.1541 |
| 17 | Zinc sulphide | 515.9556 |
| 18 | Germanium | 286.7169 |
| 19 | Zinc sulphide | 513.9143 |
| 20 | Germanium | 282.5536 |
| 21 | Zinc sulphide | 504.1142 |
| 22 | Germanium | 288.6436 |
| 23 | Zinc sulphide | 530.8378 |
| 24 | Germanium | 291.8134 |
| 25 | Zinc sulphide | 511.3925 |
| 26 | Germanium | 275.2112 |
| 27 | Zinc sulphide | 285.4052 |
A kind of 3.50~3.90 μm of above-mentioned preparation methods through LONG WAVE INFRARED optical filter, include the following steps:
(1) the clean silicon base is fitted into clean vacuum chamber, is evacuated to≤3 × 10-5Torr；
(2) silicon base is heated to 200 DEG C, and keeps 30min；
(3) ion source for opening Hall source type, cleans the silicon base 10min, the ion source work with ion beam bombardment
Making gas is argon gas, gas flow 17sccm；
(4) ion source for opening Hall source type, using the electron gun evaporation method of Assisted by Ion Beam, respectively in the silicon base
The layer-by-layer alternating deposit in side described in long wave lead to membrane system in the germanium film layer and the zinc sulphide film layer, in the silicon base
The germanium film layer and the zinc sulphide film layer in short-pass membrane system described in the layer-by-layer alternating deposit in the other side, until completing the film
The deposition of system；The deposition rate of germanium film layer is 1.0nm/s, and the deposition rate of zinc sulphide film layer is 0.8nm/s, ion source work gas
Body is argon gas, and gas flow 17sccm, thicknesses of layers is using the monitoring of quartz crystal film-thickness monitoring；
(5) the silicon base cooled to room temperature obtains a kind of 3.50~3.90 μm of short-wave infrared optical filters.
The invention has the following advantages: compared with the prior art, 1. the present invention provides a kind of 3.50~3.90 μm
The preparation method of medium-wave infrared micro light-filter, the method are handed over using the germanium film layer of high refractive index and the zinc sulphide of low-refraction
For superposition composition, the filter technology index that preparation condition appropriate is made is excellent: have in 3.50~3.90 μm of spectral coverages >=
90% high transmittance, while the mean transmissivity in 0.8~3.3 μm and 4.10~5.50 μm of wide cut-offs of spectral coverage, cut-off region
< 1%, can greatly improve the passband of the spectral coverage optical filter and the characteristic of rejection zone, and the use for meeting remote sensing system is wanted
It asks；2. the present invention provides a kind of preparation method of 3.50~3.90 μm of medium-wave infrared micro light-filters, the method uses germanium
It is film material with zinc sulphide, optical filter film layer number obtained is less, and thicknesses of layers can satisfy (long in miniature substrate
29.5mm* wide 1.6mm* thickness 1.2mm) requirement is coated on two surfaces, meet the splicing of space micro combined filters, low temperature
The requirements such as work under (80K)；3. the present invention provides a kind of 3.50~3.90 μm of medium-wave infrared micro light-filters are especially suitable
Micro combination optical filter for spectrum camera complete in space remote sensing system etc..
Detailed description of the invention
Fig. 1 is that the long wave of 3.50~3.90 μm of medium-wave infrared micro light-filters in the embodiment of the present invention leads to the theory of membrane system thoroughly
Penetrate spectrogram；
Fig. 2 is that the theory of the short-pass membrane system of 3.50~3.90 μm of medium-wave infrared micro light-filters in the embodiment of the present invention is saturating
Penetrate spectrogram；
Fig. 3 is the theoretical transmission spectrogram of 3.50~3.90 μm of medium-wave infrared micro light-filters in the embodiment of the present invention；
Fig. 4 is the transmission of 3.50~3.90 μm of medium-wave infrared micro light-filters of preparation method preparation in the embodiment of the present invention
Spectrogram.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
Specific technical solution is as follows:
A kind of 3.50~3.90 μm of short-wave infrared optical filters lead to membrane system and silicon substrate by the long wave of silicon base, silicon base side
The short-pass membrane system of the bottom other side forms；
The long 29.5mm of substrate in the present embodiment, wide 1.6mm, thick 1.2mm, the depth of parallelism < 30 of preferred substrate "；Long wave leads to film
By germanium (Ge) film layer and zinc sulphide (ZnS) film layer, alternately superposition is formed for system；Long wave leads to the structure of membrane system are as follows:
(0.35H0.7L0.35H) ^9 (0.5HL0.5H) ^13, central wavelength 2800nm；Wherein, H is germanium film layer, and 0.5 is germanium film layer
Thickness corresponds to the coefficient of basic thickness, and 0.5H indicates that zinc sulphide thicknesses of layers is 0.5 basic thickness, and L is zinc sulphide film layer, and 1
The coefficient of basic thickness is corresponded to for zinc sulphide thicknesses of layers, L indicates that zinc sulphide thicknesses of layers is 1 basic thickness, described basic
Lead to a quarter of the optical thickness central wavelength of membrane system with a thickness of long wave, 9 be the week of basic membrane stack (0.35H0.7L0.35H)
Issue, 13 be the periodicity of basic membrane stack (0.5HL0.5H).
It is optimized using the structure that Macleod software leads to membrane system to long wave, obtains preferred long wave and lead to membrane system, such as table 1
It is shown, wherein the film layer that the number of plies is 1 be long wave lead to membrane system outermost layer, the number of plies be 45 film deposition on a silicon substrate, for length
Wave leads to the innermost layer of membrane system.
1 long wave of table leads to membrane system
The theoretical transmission spectrogram that long wave leads to membrane system can be obtained to data analysis in table 1 using Macleod software, such as Fig. 1 institute
Show, display long wave leads to membrane system in 0.80~3.30 μm of wide cut-off of spectral coverage, has high transmittance in 4.10~5.50 μm of spectral coverages.
By germanium and zinc sulphide film layer, alternately superposition forms short-pass membrane system, the structure of short-pass membrane system are as follows: (0.5LH0.5L)
^13, central wavelength 4650nm；Wherein, H is germanium film layer, and 1 corresponds to the coefficient of basic thickness for germanium thicknesses of layers, and H indicates germanium film
For layer with a thickness of 1 basic thickness, L is zinc sulphide film layer, and 0.5 corresponds to the coefficient of basic thickness, 0.5L for zinc sulphide thicknesses of layers
Expression zinc sulphide thicknesses of layers is 0.5 basic thickness；It is described substantially with a thickness of the optical thickness central wavelength of short-pass membrane system
A quarter, 13 be basic membrane stack (0.5LH0.5L) periodicity.
It is optimized using structure of the Macleod software to the short-pass membrane system, obtains preferred short-pass membrane system, such as
Shown in table 2, wherein the film layer that the number of plies is 1 is the outermost layer of short-pass membrane system, the film deposition that the number of plies is 27 on a silicon substrate,
For the innermost layer of short-pass membrane system.
2 short-pass membrane system of table
The theoretical transmission spectrogram of short-pass membrane system can be obtained to data analysis in table 2 using Macleod software, such as Fig. 2 institute
Show, display short-pass membrane system has high transmittance in 4.10~5.5 μm of wide cut-offs of spectral coverage, in 3.50~3.90 μm of spectral coverages.
It is prepared in the present embodiment using the Intergrity-39 full-automatic optical coating machine system of DENTON company of the U.S.
3.50~3.90 μm of medium-wave infrared optical filters, the specific steps are as follows:
(1) the indoor impurity of vacuum is removed with dust catcher, then dips in dehydrated alcohol wiped clean vacuum chamber with absorbent gauze
Inner wall；Microwave ultrasound 15min is carried out to substrate with anhydrous propanone, then microwave ultrasound 15min is carried out to substrate with dehydrated alcohol, so
Afterwards with absorbent cotton by substrate wiped clean, clean substrate is installed on fixture to and is quickly packed into clean vacuum chamber, is taken out true
Sky is to 3 × 10-5Torr；
(2) substrate is heated to 200 DEG C, and keeps 30min；
(3) substrate 10min is cleaned with ion beam bombardment, ion source working gas is argon gas, gas flow 17sccm, from
The CC-105 of component model Hall source type；
(4) the electron gun evaporation method for using Assisted by Ion Beam, according to the data in table 1 in the layer-by-layer alternating deposit in the side of substrate
Long wave leads to the zinc sulphide film layer and yttrium fluoride film layer in membrane system；It is successively alternately heavy in the other side of substrate according to the data in table 2
Zinc sulphide film layer and yttrium fluoride film layer in product short-pass membrane system, complete the deposition of the membrane system；
Wherein, the deposition rate of zinc sulphide film layer is 2.0nm/s, and the deposition rate of yttrium fluoride film layer is 0.8nm/s, ion
Source working gas is argon gas, gas flow 17sccm, the CC-105 of ion source model Hall source type, thicknesses of layers use
The monitoring of Inficon IC/5 quartz crystal film-thickness monitoring；
(5) substrate cooled to room temperature obtains 3.50~3.90 μm of short-wave infrareds of one kind described in the present embodiment and filters
Piece.
The optical filter is performed the following performance tests:
It (1) is 80K low temperature environment in test temperature using the spectrophotometer of the Lambda900 model of U.S. PE company
Under, measure the transmitted spectrum of the optical filter as shown in figure 3, the spectral line in Fig. 3 is calculated with UVWINLAB software it is found that
Mean transmissivity of the optical filter in 0.80~3.30 μm of spectral coverage is 0.09%, being averaged in 4.10~5.50 μm of spectral coverages
Transmitance is 0.05%, and the mean transmissivity in 3.50~3.90 μm of spectral coverages is 93.50%.
(2) it is wanted according in space flight ministerial standard " QJ1697-89 " about film surface quality, adhesive force and Environmental test
Ask and tested, test result meets standard regulation, illustrate the optical filter meet space micro combined filters about
The spectrum of 3.50~3.90 μm of spectral coverage high transmittance optical filters and splicing require.
In conclusion a kind of 3.50~3.90 μm of medium-wave infrared optical filters provided by the invention and preparation method thereof, gained
To 3.50~3.90 μm of medium-wave infrared optical filters can effectively meet 3.50~3.90 μm of spectral coverages have high transmittance,
0.80~3.30 μm and 4.10~5.50 μm of wide cut-offs of spectral coverage, can use at low temperature (80K), and in the space micro group
Close the requirement of the splicing in optical filter.
Above-mentioned preferable possible embodiments only of the invention, are not limitations of the present invention, the present invention is also not limited to above-mentioned
Citing, those skilled in the art, within the essential scope of the present invention, made variations, modifications, additions or substitutions,
Also it should belong to protection scope of the present invention.
Claims (5)
1. 3.50~3.90 μm of short-wave infrared optical filters of one kind, it is characterised in that: the optical filter is by silicon base, the silicon base
Side long wave lead to membrane system, the other side of the silicon base short-pass membrane system composition；
The long wave leads to membrane system, and by germanium (Ge) film layer and zinc sulphide (ZnS) film layer, alternately superposition is formed, and the long wave leads to membrane system
Structure are as follows: (0.35H0.7L0.35H) ^9 (0.5HL0.5H) ^13, central wavelength 2800nm；H is germanium film layer, and 0.5 is germanium film
Thickness degree corresponds to the coefficient of basic thickness, and 0.5H indicates that zinc sulphide thicknesses of layers is 0.5 basic thickness, and L is zinc sulphide film layer,
1 corresponds to the coefficient of basic thickness for zinc sulphide thicknesses of layers, and L indicates that zinc sulphide thicknesses of layers is 1 basic thickness, and 9 be basic
The periodicity of membrane stack (0.35H0.7L0.35H), 13 be the periodicity of basic membrane stack (0.5HL0.5H)；
By germanium and zinc sulphide film layer, alternately superposition forms the short-pass membrane system, the structure of the short-pass membrane system are as follows:
(0.5LH0.5L) ^13, central wavelength 4650nm；Wherein, H is germanium film layer, and 1 is for what germanium thicknesses of layers corresponded to basic thickness
Number, H indicate that germanium thicknesses of layers is 1 basic thickness, and H indicates that germanium thicknesses of layers is 1 basic thickness, and L is zinc sulphide film layer,
0.5 corresponds to the coefficient of basic thickness for zinc sulphide thicknesses of layers, and 0.5L indicates that zinc sulphide thicknesses of layers is 0.5 basic thickness,
13 be the periodicity of basic membrane stack (0.5LH0.5L)；
Substantially a quarter of the optical thickness central wavelength for leading to membrane system or the short-pass membrane system with a thickness of the long wave.
2. 3.50~3.90 μm of short-wave infrared optical filters according to claim 1, it is characterised in that: the rule of the silicon base
Lattice are 29.5mm*1.6mm*1.2mm, and the depth of parallelism is less than 30 ".
3. 3.50~3.90 μm according to claim 1 or 2 of short-wave infrared optical filter, it is characterised in that: the long wave
Logical membrane system is as shown in table 1, and the film layer that the number of plies is 1 is outermost layer, and the film deposition that the number of plies is 45 is most interior in the silicon base
Layer.
1 long wave of table leads to membrane system
4. a kind of preparation method of 3.50~3.90 μm of short-wave infrared optical filters according to claim 1 or 2, feature exist
In: short-pass membrane system is as shown in table 2, and the film layer that the number of plies is 1 is outermost layer, and the film deposition that the number of plies is 27 on a silicon substrate, is
Innermost layer.
2 short-pass membrane system of table
5. a kind of 3.50~3.90 μm as claimed in claim 1 or 2 preparation methods through LONG WAVE INFRARED optical filter, feature
It is: includes the following steps:
(1) the clean silicon base is fitted into clean vacuum chamber, is evacuated to less than or equal to 3 × 10-5Torr；
(2) silicon base is heated to 200 DEG C, and keeps 30min；
(3) ion source for opening Hall source type, cleans the silicon base 10min, the ion source work gas with ion beam bombardment
Body is argon gas, gas flow 17sccm；
(4) ion source for opening Hall source type, using the electron gun evaporation method of Assisted by Ion Beam, respectively the one of the silicon base
Long wave described in the layer-by-layer alternating deposit in side leads to the germanium film layer and the zinc sulphide film layer in membrane system, in the another of the silicon base
The germanium film layer and the zinc sulphide film layer in short-pass membrane system described in the layer-by-layer alternating deposit in side, until completing the membrane system
Deposition；The deposition rate of germanium film layer is 1.0nm/s, and the deposition rate of zinc sulphide film layer is 0.8nm/s, and ion source working gas is
Argon gas, gas flow 17sccm, thicknesses of layers are monitored using quartz crystal film-thickness monitoring；
(5) the silicon base cooled to room temperature obtains a kind of 3.50~3.90 μm of short-wave infrared optical filters.
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| CN109143440B CN109143440B (en) | 2021-05-11 |
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Cited By (5)
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| CN112230325A (en) * | 2020-10-29 | 2021-01-15 | 沈阳仪表科学研究院有限公司 | Periodic symmetric structure high-order secondary reflection inhibiting short wave pass film system optical filter |
| CN115079314A (en) * | 2022-07-25 | 2022-09-20 | 无锡泓瑞航天科技有限公司 | Intermediate infrared spectrum optical window suitable for low-temperature and high-temperature environments |
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| CN111323861A (en) * | 2020-05-13 | 2020-06-23 | 翼捷安全设备（昆山）有限公司 | Infrared filter for acetylene gas detection, preparation method and application thereof |
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| CN112230325A (en) * | 2020-10-29 | 2021-01-15 | 沈阳仪表科学研究院有限公司 | Periodic symmetric structure high-order secondary reflection inhibiting short wave pass film system optical filter |
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| CN115079314A (en) * | 2022-07-25 | 2022-09-20 | 无锡泓瑞航天科技有限公司 | Intermediate infrared spectrum optical window suitable for low-temperature and high-temperature environments |
| CN115079314B (en) * | 2022-07-25 | 2024-01-16 | 无锡泓瑞航天科技有限公司 | Mid-infrared spectrum optical window suitable for low-temperature and high-temperature environments |
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