CN103245994B - A kind of 8 ~ 8.4 μm through LONG WAVE INFRARED optical filter and preparation method - Google Patents
A kind of 8 ~ 8.4 μm through LONG WAVE INFRARED optical filter and preparation method Download PDFInfo
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- CN103245994B CN103245994B CN201310145439.9A CN201310145439A CN103245994B CN 103245994 B CN103245994 B CN 103245994B CN 201310145439 A CN201310145439 A CN 201310145439A CN 103245994 B CN103245994 B CN 103245994B
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Abstract
The present invention relates to a kind of 8 ~ 8.4 μm through LONG WAVE INFRARED optical filter and preparation method, belong to optical film technology field.This optical filter comprises germanium substrate, substrate side long-pass film system and opposite side short-pass film system; Long-pass film structure is: (0.5lh0.5l) ^10(0.57l1.14h0.57l) ^6, centre wavelength is 5680nm, and short-pass film structure is: (lh) ^10, and centre wavelength is that 10900nm, l and h are followed successively by zinc sulphide and lead telluride rete respectively; By heated substrate in a vacuum, under ion gun leads to argon gas, deposit long and short ripple in substrate both sides respectively with thermal resistance evaporation lead to film system, obtained after cooling.This optical filter is high 8 ~ 8.4 μm of transmitances, 0.9 ~ 7.85 μm and 8.55 ~ 14 μm of wide cut-offs, and the film system number of plies is less, meets the request for utilization of remote sensing system; Described method is easy to be stable, and yield rate is high.
Description
Technical field
The present invention relates to a kind of 8 ~ 8.4 μm through LONG WAVE INFRARED optical filter and preparation method, specifically, relate to and a kind of at 8 ~ 8.4 μm of spectral coverages, there is high permeability, simultaneously at the LONG WAVE INFRARED optical filter of 0.9 ~ 7.85 μm and 8.55 ~ 14 μm wide cut-off of spectral coverage; Belong to optical film technology field.
Background technology
The optical filter having high permeability at 8 ~ 8.4 μm of spectral coverages is a crucial optical filter in current remote sensing system.In order to reduce the impact of signal noise, need in remote sensing system to suppress the light signal of 0.9 ~ 7.85 μm and 8.55 ~ 14 μm spectral coverage.Therefore need design one badly, at 8 ~ 8.4 μm of spectral coverages, there is high permeability, simultaneously 0.9 ~ 7.85 μm and 8.55 ~ 14 μm of wide cut-offs of spectral coverage, the good LONG WAVE INFRARED optical filter of film quality simultaneously.
Summary of the invention
At 8 ~ 8.4 μm of spectral coverages, there is high permeability for there is no one in prior art, simultaneously in the defect of the LONG WAVE INFRARED optical filter of 0.9 ~ 7.85 μm and 8.55 ~ 14 μm wide cut-off of spectral coverage, an object of the present invention be to provide a kind of 8 ~ 8.4 μm through LONG WAVE INFRARED optical filter, described optical filter has high permeability at 8 ~ 8.4 μm of spectral coverages, simultaneously 0.9 ~ 7.85 μm and 8.55 ~ 14 μm of wide cut-offs of spectral coverage.
Two of object of the present invention be to provide a kind of 8 ~ 8.4 μm through the preparation method of LONG WAVE INFRARED optical filter.
Object of the present invention is achieved through the following technical solutions.
8 ~ 8.4 μm through a LONG WAVE INFRARED optical filter, described optical filter comprises substrate, the long-pass film system of substrate side and the short-pass film system of substrate opposite side.
Wherein, described base material is germanium, and preferred size is: long 29.5mm, wide 1.64mm, thick 1.2mm, and preferred surface smooth finish is 40/20.
Long-pass film system comprises zinc sulphide (ZnS) rete and lead telluride (PbTe) rete of alternately superposition, and structure is: (0.5lh0.5l) ^10 (0.57l1.14h0.57l) ^6, and centre wavelength is 5680nm, wherein, l is zinc sulphide rete, 0.5 and 0.57 coefficient being respectively the corresponding basic thickness of ZnS-film layer thickness, 0.5l represents that ZnS-film layer thickness is 0.5 basic thickness, 0.57l represents that ZnS-film layer thickness is 0.57 basic thickness, h is lead telluride rete, 1 and 1.14 coefficients being respectively the corresponding basic thickness of lead telluride thicknesses of layers, h represents that lead telluride thicknesses of layers is 1 basic thickness, 1.14h represents that lead telluride thicknesses of layers is 1.14 basic thickness, described basic thickness is 1/4th of optical thickness centre wavelength, 10 is the periodicity of basic membrane stack (0.5lh0.5l), 6 is the periodicity of basic membrane stack (0.57l1.14h0.57l).
Adopt the structure of TFCalc software to described long-pass film system to be optimized, obtain preferred long-pass film system, as shown in table 1, wherein, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 33 rete be deposited in germanium substrate, be the innermost layer of long-pass film system;
Table 1 long-pass film system
Short-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately superposition, and structure is: (lh) ^10, and centre wavelength is 10900nm; Wherein, l is zinc sulphide rete, 1 is the coefficient of the corresponding basic thickness of ZnS-film layer thickness, l represents that ZnS-film layer thickness is 1 basic thickness, h is lead telluride rete, and 1 is the coefficient of the corresponding basic thickness of lead telluride thicknesses of layers, and h represents that lead telluride thicknesses of layers is 1 basic thickness, the periodicity of described basic thickness to be 1/4th, 10 of optical thickness centre wavelength be basic membrane stack (lh).
Adopt the structure of TFCalc software to described short-pass film system to be optimized, obtain preferred short-pass film system, as shown in table 2, wherein, the number of plies be 1 rete be the outermost layer of short-pass film system, the number of plies be 20 rete be deposited in germanium substrate, be the innermost layer of short-pass film system;
Table 2 short-pass film system
Of the present invention 8 ~ 8.4 μm through the preparation method of LONG WAVE INFRARED optical filter, described method step is as follows:
(1) clean substrate is loaded in clean vacuum chamber, be evacuated to 3.0 × 10
-3pa;
(2) substrate is heated to 150 DEG C, and keeps 30min;
(3) open the light-duty ion gun of Hall and lead to argon gas, airshed is 30sccm, and unlatching cathode voltage is 100 ~ 200V, and anode voltage is 50 ~ 100V, makes anode current be 0.5A; Adopt the zinc sulphide rete of reactive evaporation respectively in the side of substrate successively alternating deposit long-pass film system and lead telluride rete, at zinc sulphide rete successively in alternating deposit short-pass film system of the opposite side of substrate and lead telluride rete, until complete the deposition of described film system; Wherein, the rate of sedimentation of zinc sulphide rete is 2.0 ~ 3.0nm/s, and the rate of sedimentation of lead telluride rete is 0.8 ~ 1.0nm/s; Thicknesses of layers adopts the monitoring of light rule of three;
(4) substrate naturally cools to room temperature, obtain a kind of of the present invention 8 ~ 8.4 μm through LONG WAVE INFRARED optical filter.
Beneficial effect
1. the invention provides a kind of 8 ~ 8.4 μm through LONG WAVE INFRARED optical filter, described optical filter reaches excellent technique index: have high permeability τ at 8 ~ 8.4 μm of spectral coverages
av>=80%, simultaneously 0.9 ~ 7.85 μm and 8.55 ~ 14 μm of wide cut-offs of spectral coverage, cut-off degree of depth τ in cut-off region
λ<1%, half-power point wavelength franchise, within 50nm, greatly can be improved the passband of this spectral coverage optical filter and the characteristic of rejection zone, meet the request for utilization of remote sensing system, have high stability and high reliability;
2. the invention provides a kind of 8 ~ 8.4 μm through LONG WAVE INFRARED optical filter, the film system of described optical filter comprises zinc sulphide rete and the lead telluride rete of alternately superposition, and the film system number of plies is less;
3. the invention provides a kind of 8 ~ 8.4 μm through the preparation method of LONG WAVE INFRARED optical filter, described method can obtain optical filter of the present invention, and process stabilizing is reproducible, easy and simple to handle, and finished product rate is high.
Accompanying drawing explanation
Fig. 1 is the transmitted light spectrogram of optical filter in embodiment 1.
Embodiment
In order to absolutely prove characteristic of the present invention and implement mode of the present invention, provide embodiment below.
Embodiment 1
8 ~ 8.4 μm through a LONG WAVE INFRARED optical filter, described optical filter comprises germanium substrate, the long-pass film system of substrate side and the short-pass film system of substrate opposite side.
Wherein, the long 29.5mm of described substrate, wide 1.64mm, thick 1.2mm, surface smoothness is 40/20.
Long-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately superposition, and centre wavelength is 5680nm; Each parameters of film is as shown in table 3, wherein, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 33 rete be deposited in germanium substrate, be the innermost layer of long-pass film system;
Table 3 long-pass film system and thicknesses of layers monitoring
Short-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately superposition, and centre wavelength is 10900nm, and each parameters of film is as shown in table 4, wherein, the number of plies be 1 rete be the outermost layer of short-pass film system, the number of plies be 20 rete be deposited in germanium substrate, be the innermost layer of short-pass film system;
Table 4 short-pass film system and thicknesses of layers monitoring
This preparation method's step implementing described optical filter is as follows:
(1) remove the impurity in vacuum chamber with suction cleaner, then dip in absolute ethyl alcohol wiped clean vacuum chamber inwall with absorbent gauze; With analysis pure acetone ultrasonic cleaning substrate 10min, then with analysis straight alcohol ultrasonic cleaning substrate 10min, clean substrate is loaded in clean vacuum chamber, is evacuated to 3.0 × 10
-3pa;
(2) substrate is heated to 150 DEG C, and keeps 30min;
(3) open the light-duty ion gun of Hall and lead to argon gas, airshed is 30sccm, unlatching cathode voltage is 100 ~ 200V, anode voltage is 50 ~ 100V, anode current is made to be 0.5A, adopt the zinc sulphide rete of reactive evaporation respectively in the side of substrate successively alternating deposit long-pass film system and lead telluride rete, at zinc sulphide rete successively in alternating deposit short-pass film system of the opposite side of substrate and lead telluride rete, until complete the deposition of described film system; Wherein, the rate of sedimentation of zinc sulphide rete is 2.0 ~ 3.0nm/s, and the rate of sedimentation of lead telluride rete is 0.8 ~ 1.0nm/s; Thicknesses of layers adopts the monitoring of light rule of three, and supervisory wavelength and number of times are as shown in Table 3 and Table 4;
(4) substrate naturally cools to room temperature, obtain described in a kind of the present embodiment 8 ~ 8.4 μm through LONG WAVE INFRARED optical filter.
Following performance test is carried out to described optical filter:
Adopt the test of PE company system2000 infrared Fourier spectrometer, obtain transmitted spectrum as shown in Figure 1, with UVWINLAB software, the spectral line in Fig. 1 is calculated, known described optical filter is 81.6% at the mean transmissivity of 8 ~ 8.4 μm of spectral coverages, being 0.57% at the mean transmissivity of 0.9 ~ 7.85 μm of spectral coverage, is 0.03% at the mean transmissivity of 8.55 ~ 14 μm of spectral coverages.
The present invention includes but be not limited to above embodiment, every any equivalent replacement of carrying out under the spirit and principles in the present invention or local improvement, all will be considered as within protection scope of the present invention.
Claims (5)
1. 8 ~ 8.4 μm through a LONG WAVE INFRARED optical filter, it is characterized in that: described optical filter comprises germanium substrate, the long-pass film system of substrate side and the short-pass film system of substrate opposite side;
Long-pass film system comprises zinc sulphide and the lead telluride rete of alternately superposition, as shown in table 1, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 33 rete be deposited in substrate, be the innermost layer of long-pass film system;
Table 1 long-pass film system
Short-pass film system comprises zinc sulphide and the lead telluride rete of alternately superposition, as shown in table 2, the number of plies be 1 rete be the outermost layer of short-pass film system, the number of plies be 20 rete be deposited in substrate, be the innermost layer of short-pass film system;
Table 2 short-pass film system
2. according to claim 1 a kind of 8 ~ 8.4 μm through LONG WAVE INFRARED optical filter, it is characterized in that: the long 29.5mm of substrate, wide 1.64mm, thick 1.2mm; Surface smoothness is 40/20.
3. as claimed in claim 1 or 2 a kind of 8 ~ 8.4 μm through the preparation method of LONG WAVE INFRARED optical filter, it is characterized in that: described method step is as follows:
(1) clean substrate is loaded in clean vacuum chamber, be evacuated to 3.0 × 10
-3pa;
(2) substrate is heated to 150 DEG C, and keeps 30min;
(3) open the light-duty ion gun of Hall and lead to argon gas, airshed is 30sccm, and unlatching cathode voltage is 100 ~ 200V, anode voltage 50 ~ 100V, makes anode current be 0.5A; Adopt reactive evaporation respectively in substrate both sides deposition long-pass film system and short-pass film system; The rate of sedimentation of zinc sulphide rete is 2.0 ~ 3.0nm/s, and the rate of sedimentation of lead telluride rete is 0.8 ~ 1.0nm/s; Thicknesses of layers adopts the monitoring of light rule of three;
(4) substrate naturally cools to room temperature, obtain a kind of 8 ~ 8.4 μm through LONG WAVE INFRARED optical filter.
4. according to claim 3 a kind of 8 ~ 8.4 μm through the preparation method of LONG WAVE INFRARED optical filter, it is characterized in that: long-pass film system and thicknesses of layers are monitored as shown in table 3, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 33 rete be deposited in substrate, be the innermost layer of long-pass film system;
Table 3 long-pass film system and thicknesses of layers monitoring
5. according to claim 3 a kind of 8 ~ 8.4 μm through the preparation method of LONG WAVE INFRARED optical filter, it is characterized in that: short-pass film system and thicknesses of layers are monitored as shown in table 4, the number of plies be 1 rete be the outermost layer of short-pass film system, the number of plies be 20 rete be deposited in substrate, be the innermost layer of short-pass film system;
Table 4 short-pass film system and thicknesses of layers monitoring
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| CN105137514B (en) * | 2015-09-11 | 2017-07-28 | 兰州空间技术物理研究所 | 4.2~4.45 μm pass through medium-wave infrared optical filter and preparation method |
| CN110879435B (en) * | 2019-11-18 | 2021-08-06 | 中国科学院上海技术物理研究所 | Medium-long wave infrared wide spectrum color separation sheet with zinc selenide crystal as substrate |
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| CN2243085Y (en) * | 1995-10-23 | 1996-12-18 | 中国科学院上海技术物理研究所 | 8-14 micron mini-size linear graduated variation light filter |
| CN102269835A (en) * | 2011-08-30 | 2011-12-07 | 中国科学院上海技术物理研究所 | Infrared band-pass optical filter with high-squareness transparence curve |
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| KR100682928B1 (en) * | 2005-02-03 | 2007-02-15 | 삼성전자주식회사 | Energy downconversion film and quantum dot film comprising quantum dot |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2243085Y (en) * | 1995-10-23 | 1996-12-18 | 中国科学院上海技术物理研究所 | 8-14 micron mini-size linear graduated variation light filter |
| CN102269835A (en) * | 2011-08-30 | 2011-12-07 | 中国科学院上海技术物理研究所 | Infrared band-pass optical filter with high-squareness transparence curve |
Non-Patent Citations (2)
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| PbTe|CdTe Core|Shell Particles by Cation Exchange,a HR-TEM study;Karel Lambert，Bram De Geyter等;《CHEMISTRY of MATERIALS》;20090217;全文 * |
| 碲化铅/硫化锌红外多层滤光片的光谱漂移研究;熊玉卿，李少梅等;《光学技术》;19991231(第4期);全文 * |
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