CN103245994A - Long-wave infrared optical filter transmitting light at 8-8.4 Mum and preparation method of optical filter - Google Patents
Long-wave infrared optical filter transmitting light at 8-8.4 Mum and preparation method of optical filter Download PDFInfo
- Publication number
- CN103245994A CN103245994A CN2013101454399A CN201310145439A CN103245994A CN 103245994 A CN103245994 A CN 103245994A CN 2013101454399 A CN2013101454399 A CN 2013101454399A CN 201310145439 A CN201310145439 A CN 201310145439A CN 103245994 A CN103245994 A CN 103245994A
- Authority
- CN
- China
- Prior art keywords
- long
- film system
- pass film
- rete
- optical filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention relates to a long-wave infrared optical filter transmitting light at 8-8.4 Mum and a preparation method of the optical filter and belongs to the technical field of optical thin films. The optical filter comprises a germanium substrate, a long-wave-pass film system on one side of the substrate and a short-wave-pass film system on the other side of the substrate. The long-wave-pass film system adopts the structure of (0.51h0.51)<10>(0.5711.14h0.571)<6> and has the central wavelength of 5680 nm, and the short-wave-pass film system adopts the structure of (1h)<10> and has the central wavelength of 10900 nm, wherein 1 and h are zinc sulphide and lead telluride films in sequence respectively. The optical filter is prepared through the following steps: heating the substrate in vacuo; depositing the long-wave-pass film system and the short-wave-pass film system on the two sides of the substrate respectively through resistance evaporation on the condition that an ion source is fed with argon gas; and cooling. The optical filter has high transmission at 8-8.4 Mum and wide stop band at 0.9-7.85 Mum and 8.5-14 Mum, has fewer film system layers and meets the operating requirements of a remote sensing detection system; and the method is simple, convenient and stable and has high yield.
Description
Technical field
The present invention relates to LONG WAVE INFRARED optical filter and preparation method that a kind of 8～8.4 μ m see through, specifically, relate to and a kind ofly have high permeability at 8～8.4 μ m spectral coverages, simultaneously at 0.9～7.85 μ m and the wide LONG WAVE INFRARED optical filter that ends of 8.55～14 μ m spectral coverages; Belong to optical film technology field.
Background technology
Be the optical filter of a key in the present remote sensing system at the optical filter that 8～8.4 μ m spectral coverages have a high permeability.In order to reduce the influence of signal noise, need in the remote sensing system light signal of 0.9～7.85 μ m and 8.55～14 μ m spectral coverages is suppressed.Therefore need that design is a kind of to have high permeability at 8～8.4 μ m spectral coverages badly, simultaneously in 0.9～7.85 μ m and 8.55～14 wide ending of μ m spectral coverage, film quality LONG WAVE INFRARED optical filter preferably simultaneously.
Summary of the invention
A kind ofly do not have high permeability at 8～8.4 μ m spectral coverages at still having in the prior art, while is in the defective of 0.9～7.85 μ m and the wide LONG WAVE INFRARED optical filter that ends of 8.55～14 μ m spectral coverages, the LONG WAVE INFRARED optical filter that provides a kind of 8～8.4 μ m to see through is provided one of purpose of the present invention, described optical filter has high permeability at 8～8.4 μ m spectral coverages, simultaneously in 0.9～7.85 μ m and 8.55～14 wide ending of μ m spectral coverage.
Two of purpose of the present invention is to provide the preparation method of the LONG WAVE INFRARED optical filter that a kind of 8～8.4 μ m see through.
Purpose of the present invention is achieved through the following technical solutions.
The LONG WAVE INFRARED optical filter that a kind of 8～8.4 μ m see through, described optical filter comprise the long-pass film system of substrate, substrate one side and the short-pass film system of substrate opposite side.
Wherein, described base material is germanium, and preferred size is: long 29.5mm, and wide 1.64mm, thick 1.2mm, preferred surface smooth finish is 40/20.
Long-pass film system comprises zinc sulphide (ZnS) rete and lead telluride (PbTe) rete of alternately stack, and structure is: ^6 (0.5lh0.5l) ^10(0.57l1.14h0.57l), and centre wavelength is 5680nm; Wherein, l is the zinc sulphide rete, 0.5 and 0.57 coefficient that is respectively the corresponding basic thickness of ZnS-film layer thickness, 0.5l expression ZnS-film layer thickness is 0.5 basic thickness, 0.57l expression ZnS-film layer thickness is 0.57 basic thickness, h is the lead telluride rete, 1 and 1.14 are respectively the coefficient of the corresponding basic thickness of lead telluride thicknesses of layers, h represents that the lead telluride thicknesses of layers is 1 basic thickness, 1.14h expression lead telluride thicknesses of layers is 1.14 basic thickness, described basic thickness is that 1/4th, 10 of optical thickness centre wavelength is the periodicity of basic membrane stack (0.5lh0.5l), and 6 is the periodicity of basic membrane stack (0.57l1.14h0.57l).
Employing TFCalc software is optimized the structure that described long-pass film is, obtains preferred long-pass film to be, and is as shown in table 1, wherein, the number of plies is that 1 rete is the outermost layer of long-pass film system, and the number of plies is that 33 rete is deposited in the germanium substrate, is the innermost layer of long-pass film system;
Table 1 long-pass film system
。
Short-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately stack, and structure is: (lh) ^10, and centre wavelength is 10900nm; Wherein, l is the zinc sulphide rete, 1 is the coefficient of the corresponding basic thickness of ZnS-film layer thickness, l represents that the ZnS-film layer thickness is 1 basic thickness, h is the lead telluride rete, and 1 is the coefficient of the corresponding basic thickness of lead telluride thicknesses of layers, and h represents that the lead telluride thicknesses of layers is 1 basic thickness, described basic thickness is that 1/4th, 10 of optical thickness centre wavelength is the periodicity of basic membrane stack (lh).
Employing TFCalc software is optimized the structure that described short-pass film is, obtains preferred short-pass film to be, and is as shown in table 2, wherein, the number of plies is that 1 rete is the outermost layer of short-pass film system, and the number of plies is that 20 rete is deposited in the germanium substrate, is the innermost layer of short-pass film system;
Table 2 short-pass film system
。
The preparation method of the LONG WAVE INFRARED optical filter that a kind of 8～8.4 μ m of the present invention see through, described method step is as follows:
(1) clean substrate is packed into the cleaning vacuum chamber in, be evacuated to 3.0 * 10
-3Pa;
(2) substrate is heated to 150 ℃, and keeps 30min;
(3) open the logical argon gas of the light-duty ion gun of Hall, airshed is 30sccm, and the unlatching cathode voltage is 100～200V, and anode voltage is 50～100V, makes that anode current is 0.5A; Adopt the thermal resistance evaporation method respectively at a side of substrate zinc sulphide rete and the lead telluride rete in the alternating deposit long-pass film system successively, at the opposite side of substrate zinc sulphide rete and the lead telluride rete in the alternating deposit short-pass film system successively, until the deposition of finishing described film system; Wherein, the rate of sedimentation of zinc sulphide rete is 2.0～3.0nm/s, and the rate of sedimentation of lead telluride rete is 0.8～1.0nm/s; Thicknesses of layers adopts the monitoring of light rule of three;
(4) substrate naturally cools to room temperature, obtains the LONG WAVE INFRARED optical filter that a kind of 8～8.4 μ m of the present invention see through.
Beneficial effect
1. the invention provides the LONG WAVE INFRARED optical filter that a kind of 8～8.4 μ m see through, described optical filter reaches the excellent technique index: have high permeability τ at 8～8.4 μ m spectral coverages
Av〉=80%, simultaneously in 0.9～7.85 μ m and 8.55～14 wide ending of μ m spectral coverage, end degree of depth τ in the cut-off region
λ＜1%, half-power point wavelength franchise can be improved the characteristic of passband and the rejection zone of this spectral coverage optical filter greatly within 50nm, satisfy the request for utilization of remote sensing system, has high stability and high reliability;
2. the invention provides the LONG WAVE INFRARED optical filter that a kind of 8～8.4 μ m see through, the film system of described optical filter comprises zinc sulphide rete and the lead telluride rete of alternately stack, and film is that the number of plies is less;
3. the invention provides the preparation method of the LONG WAVE INFRARED optical filter that a kind of 8～8.4 μ m see through, described method can make optical filter of the present invention, process stabilizing, and good reproducibility, easy and simple to handle, finished product rate height.
Description of drawings
Fig. 1 is the transmitted light spectrogram of optical filter among the embodiment 1.
Embodiment
In order to prove absolutely characteristic of the present invention and to implement mode of the present invention, provide embodiment below.
Embodiment 1
The LONG WAVE INFRARED optical filter that a kind of 8～8.4 μ m see through, described optical filter comprise the long-pass film system of germanium substrate, substrate one side and the short-pass film system of substrate opposite side.
Wherein, the long 29.5mm of described substrate, wide 1.64mm, thick 1.2mm, surface smoothness is 40/20.
Long-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately stack, and centre wavelength is 5680nm; Each rete parameter is as shown in table 3, and wherein, the number of plies is that 1 rete is the outermost layer of long-pass film system, and the number of plies is that 33 rete is deposited in the germanium substrate, is the innermost layer of long-pass film system;
Table 3 long-pass film system and thicknesses of layers monitoring
。
Short-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately stack, and centre wavelength is 10900nm, and each rete parameter is as shown in table 4, wherein, the number of plies is that 1 rete is the outermost layer of short-pass film system, and the number of plies is that 20 rete is deposited in the germanium substrate, is the innermost layer of short-pass film system;
Table 4 short-pass film system and thicknesses of layers monitoring
。
This preparation method's step of implementing described optical filter is as follows:
(1) with the impurity in the suction cleaner removing vacuum chamber, dips in absolute ethyl alcohol wiped clean vacuum chamber inwall with absorbent gauze then; With analyzing pure acetone ultrasonic cleaning substrate 10min, again with analyzing straight alcohol ultrasonic cleaning substrate 10min, clean substrate is packed in the vacuum chamber of cleaning, be evacuated to 3.0 * 10
-3Pa;
(2) substrate is heated to 150 ℃, and keeps 30min;
(3) open the logical argon gas of the light-duty ion gun of Hall, airshed is 30sccm, the unlatching cathode voltage is 100～200V, anode voltage is 50～100V, make that anode current is 0.5A, adopt the thermal resistance evaporation method respectively at a side of substrate zinc sulphide rete and the lead telluride rete in the alternating deposit long-pass film system successively, at the opposite side of substrate zinc sulphide rete and the lead telluride rete in the alternating deposit short-pass film system successively, until the deposition of finishing described film system; Wherein, the rate of sedimentation of zinc sulphide rete is 2.0～3.0nm/s, and the rate of sedimentation of lead telluride rete is 0.8～1.0nm/s; Thicknesses of layers adopts the monitoring of light rule of three, and supervisory wavelength and number of times are shown in table 3 and table 4;
(4) substrate naturally cools to room temperature, obtains the LONG WAVE INFRARED optical filter that described 8～8.4 μ m of a kind of present embodiment see through.
Described optical filter is carried out following performance test:
Adopt the test of the PE system2000 of company infrared Fourier spectrometer, obtain transmitted spectrum as shown in Figure 1, with UVWINLAB software the spectral line among Fig. 1 is calculated, described optical filter is 81.6% at the mean transmissivity of 8～8.4 μ m spectral coverages as can be known, mean transmissivity at 0.9～7.85 μ m spectral coverage is 0.57%, is 0.03% at the mean transmissivity of 8.55～14 μ m spectral coverages.
The present invention includes but be not limited to above embodiment, every any being equal to of carrying out under the spirit and principles in the present invention, replace or local improvement, all will be considered as within protection scope of the present invention.
Claims (9)
1. the LONG WAVE INFRARED optical filter that sees through of a μ m, it is characterized in that: described optical filter comprises the long-pass film system of germanium substrate, substrate one side and the short-pass film system of substrate opposite side;
Long-pass film system comprises zinc sulphide and the lead telluride rete of alternately stack, and structure is: ^6 (0.5lh0.5l) ^10(0.57l1.14h0.57l), and centre wavelength is 5680nm; L is the zinc sulphide rete, 0.5l expression ZnS-film layer thickness is 0.5 basic thickness, 0.57l expression ZnS-film layer thickness is 0.57 basic thickness, h is the lead telluride rete, expression lead telluride thicknesses of layers is 1 basic thickness, and 1.14h represents that the lead telluride thicknesses of layers is 1.14 basic thickness, and described basic thickness is 1/4th of optical thickness centre wavelength, 10 is the periodicity of basic membrane stack (0.5lh0.5l), and 6 is the periodicity of basic membrane stack (0.57l1.14h0.57l);
Short-pass film system comprises zinc sulphide and the lead telluride rete of alternately stack, and structure is: (lh) ^10, and centre wavelength is 10900nm; L is the zinc sulphide rete, expression ZnS-film layer thickness is 1 basic thickness, and h is the lead telluride rete, and expression lead telluride thicknesses of layers is 1 basic thickness, described basic thickness is that 1/4th, 10 of optical thickness centre wavelength is the periodicity of basic membrane stack (lh).
2. the LONG WAVE INFRARED optical filter that sees through of a kind of 8～8.4 μ m according to claim 1 is characterized in that: the long 29.5mm of substrate, wide 1.64mm, thick 1.2mm; Surface smoothness is 40/20.
3. the LONG WAVE INFRARED optical filter that sees through of a kind of 8～8.4 μ m according to claim 1 and 2, it is characterized in that: the long-pass film is as shown in table 1, the number of plies is that 1 rete is the outermost layer of long-pass film system, and the number of plies is that 33 rete is deposited in the substrate, is the innermost layer of long-pass film system;
Table 1 long-pass film system
。
4. the LONG WAVE INFRARED optical filter that sees through of a kind of 8～8.4 μ m according to claim 1 and 2, it is characterized in that: the short-pass film is as shown in table 2, the number of plies is that 1 rete is the outermost layer of short-pass film system, and the number of plies is that 20 rete is deposited in the substrate, is the innermost layer of short-pass film system;
Table 2 short-pass film system
。
5. the LONG WAVE INFRARED optical filter that sees through of a kind of 8～8.4 μ m according to claim 4, it is characterized in that: the long-pass film is as shown in table 1, the number of plies is that 1 rete is the outermost layer of long-pass film system, and the number of plies is that 33 rete is deposited in the substrate, is the innermost layer of long-pass film system;
Table 1 long-pass film system
。
6. the preparation method of the LONG WAVE INFRARED optical filter that sees through of a kind of 8～8.4 μ m as claimed in claim 1 or 2, it is characterized in that: described method step is as follows:
(1) clean substrate is packed into the cleaning vacuum chamber in, be evacuated to 3.0 * 10
-3Pa;
(2) substrate is heated to 150 ℃, and keeps 30min;
(3) open the logical argon gas of the light-duty ion gun of Hall, airshed is 30sccm, and the unlatching cathode voltage is 100～200V, and anode voltage 50～100V makes that anode current is 0.5A; Adopt the thermal resistance evaporation method respectively in substrate both sides deposition long-pass film system and short-pass film system; The rate of sedimentation of zinc sulphide rete is 2.0～3.0nm/s, and the rate of sedimentation of lead telluride rete is 0.8～1.0nm/s; Thicknesses of layers adopts the monitoring of light rule of three;
(4) substrate naturally cools to room temperature, obtains the LONG WAVE INFRARED optical filter that a kind of 8～8.4 μ m see through.
7. the preparation method of the LONG WAVE INFRARED optical filter that sees through of a kind of 8～8.4 μ m according to claim 6, it is characterized in that: long-pass film system and thicknesses of layers monitoring are as shown in table 3, the number of plies is that 1 rete is the outermost layer of long-pass film system, the number of plies is that 33 rete is deposited in the substrate, is the innermost layer of long-pass film system;
Table 3 long-pass film system and thicknesses of layers monitoring
。
8. the preparation method of the LONG WAVE INFRARED optical filter that sees through of a kind of 8～8.4 μ m according to claim 6, it is characterized in that: short-pass film system and thicknesses of layers monitoring are as shown in table 4, the number of plies is that 1 rete is the outermost layer of short-pass film system, the number of plies is that 20 rete is deposited in the substrate, is the innermost layer of short-pass film system;
Table 4 short-pass film system and thicknesses of layers monitoring
。
9. the preparation method of the LONG WAVE INFRARED optical filter that sees through of a kind of 8～8.4 μ m according to claim 8, it is characterized in that: long-pass film system and thicknesses of layers monitoring are as shown in table 3, the number of plies is that 1 rete is the outermost layer of long-pass film system, the number of plies is that 33 rete is deposited in the substrate, is the innermost layer of long-pass film system;
Table 3 long-pass film system and thicknesses of layers monitoring
。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310145439.9A CN103245994B (en) | 2013-04-25 | 2013-04-25 | A kind of 8 ~ 8.4 μm through LONG WAVE INFRARED optical filter and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310145439.9A CN103245994B (en) | 2013-04-25 | 2013-04-25 | A kind of 8 ~ 8.4 μm through LONG WAVE INFRARED optical filter and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103245994A true CN103245994A (en) | 2013-08-14 |
| CN103245994B CN103245994B (en) | 2016-04-06 |
Family
ID=48925626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310145439.9A Active CN103245994B (en) | 2013-04-25 | 2013-04-25 | A kind of 8 ~ 8.4 μm through LONG WAVE INFRARED optical filter and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103245994B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105137514A (en) * | 2015-09-11 | 2015-12-09 | 兰州空间技术物理研究所 | 4.2-4.45[mu]m transmission medium wave infrared optical filter and preparation method |
| CN110879435A (en) * | 2019-11-18 | 2020-03-13 | 中国科学院上海技术物理研究所 | Medium-long wave infrared wide spectrum color separation sheet with zinc selenide crystal as substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2243085Y (en) * | 1995-10-23 | 1996-12-18 | 中国科学院上海技术物理研究所 | 8-14 micron mini-size linear graduated variation light filter |
| US20060169971A1 (en) * | 2005-02-03 | 2006-08-03 | Kyung-Sang Cho | Energy conversion film and quantum dot film comprising quantum dot compound, energy conversion layer including the quantum dot film, and solar cell including the energy conversion layer |
| CN102269835A (en) * | 2011-08-30 | 2011-12-07 | 中国科学院上海技术物理研究所 | Infrared band-pass optical filter with high-squareness transparence curve |
-
2013
- 2013-04-25 CN CN201310145439.9A patent/CN103245994B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2243085Y (en) * | 1995-10-23 | 1996-12-18 | 中国科学院上海技术物理研究所 | 8-14 micron mini-size linear graduated variation light filter |
| US20060169971A1 (en) * | 2005-02-03 | 2006-08-03 | Kyung-Sang Cho | Energy conversion film and quantum dot film comprising quantum dot compound, energy conversion layer including the quantum dot film, and solar cell including the energy conversion layer |
| CN102269835A (en) * | 2011-08-30 | 2011-12-07 | 中国科学院上海技术物理研究所 | Infrared band-pass optical filter with high-squareness transparence curve |
Non-Patent Citations (2)
| Title |
|---|
| KAREL LAMBERT，BRAM DE GEYTER等: "PbTe|CdTe Core|Shell Particles by Cation Exchange,a HR-TEM study", 《CHEMISTRY OF MATERIALS》, 17 February 2009 (2009-02-17) * |
| 熊玉卿，李少梅等: "碲化铅/硫化锌红外多层滤光片的光谱漂移研究", 《光学技术》, no. 4, 31 December 1999 (1999-12-31), pages 1 - 6 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105137514A (en) * | 2015-09-11 | 2015-12-09 | 兰州空间技术物理研究所 | 4.2-4.45[mu]m transmission medium wave infrared optical filter and preparation method |
| CN105137514B (en) * | 2015-09-11 | 2017-07-28 | 兰州空间技术物理研究所 | 4.2~4.45 μm pass through medium-wave infrared optical filter and preparation method |
| CN110879435A (en) * | 2019-11-18 | 2020-03-13 | 中国科学院上海技术物理研究所 | Medium-long wave infrared wide spectrum color separation sheet with zinc selenide crystal as substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103245994B (en) | 2016-04-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109655954B (en) | Optical filter, preparation method thereof, fingerprint identification module and electronic equipment | |
| CN105137514B (en) | 4.2~4.45 μm pass through medium-wave infrared optical filter and preparation method | |
| TWI786846B (en) | Optical filter | |
| CN109143440B (en) | 3.50-3.90 mu m medium wave infrared micro filter and preparation method thereof | |
| US8236433B2 (en) | Antireflection structure and manufacturing method thereof | |
| CN103245993B (en) | 8.4 ~ 8.8 μm through LONG WAVE INFRARED optical filter and preparation method | |
| CN108169832B (en) | 2.75-2.95-micrometer-sized medium-wave-transmitting infrared filter and preparation method thereof | |
| CN212515117U (en) | Optical filter | |
| CN103245983A (en) | Visible near-infrared spectrum band reflection and infrared multispectral band transmission color separation filter and preparation method | |
| CN110133783B (en) | Manufacturing method of infrared narrow-band filter | |
| CN110783157B (en) | Composite optical film applied to multi-alkali photoelectric cathode and preparation method thereof | |
| CN111061001A (en) | 480-580 nm visible light transmission filter and preparation method thereof | |
| Guillen et al. | Transparent electrodes based on metal and metal oxide stacked layers grown at room temperature on polymer substrate | |
| CN113433607B (en) | Double-bandpass filter and manufacturing method thereof | |
| CN103257385B (en) | Long-wave infrared filter permeable within range of 11.4-12.5microns and preparation method | |
| CN210514674U (en) | Germanium-based infrared long-wave pass filter | |
| CN103245995A (en) | 10.3 mu m-11.3 mu m transmissive long-wave infrared optical filter and preparation method | |
| CN103245994A (en) | Long-wave infrared optical filter transmitting light at 8-8.4 Mum and preparation method of optical filter | |
| CN103245992A (en) | 1.55 mu m-1.75 mu m transmissive short-wave infrared optical filter and preparation method | |
| CN209400726U (en) | Optical filter, fingerprint recognition mould group and electronic equipment | |
| CN101692132A (en) | Linear gradient optical filter of 0.4 to 1.1 micrometers and preparation method thereof | |
| CN212009008U (en) | NBP578 nanometer narrow-band filter for glucometer | |
| CN107207331A (en) | Glass plate and compound glass with stacked film | |
| CN110579829A (en) | Near-infrared filter, preparation method thereof and filtering equipment | |
| JP2003098340A (en) | Optical multilayer interference film, method for manufacturing the same and filter using optical multilayer interference film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |