CN103245995B - 10.3 mu m-11.3 mu m transmissive long-wave infrared optical filter and preparation method - Google Patents
10.3 mu m-11.3 mu m transmissive long-wave infrared optical filter and preparation method Download PDFInfo
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- CN103245995B CN103245995B CN201310150084.2A CN201310150084A CN103245995B CN 103245995 B CN103245995 B CN 103245995B CN 201310150084 A CN201310150084 A CN 201310150084A CN 103245995 B CN103245995 B CN 103245995B
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Abstract
The invention relates to a 10.3 mu m-11.3 mu m transmissive long-wave infrared optical filter and a preparation method, and belongs to the technical field of optical thin films. The optical filter comprises a germanium substrate, a long-wave-pass film system and a short-wave-pass film system, wherein the structure of the long-wave-pass film system is (0.5hl0.5h)^9(0.574l1.148h0.574l)^5(0.36h0.7210.36h)^5, and the central wavelength is 7,300 nm; the structure of the short-wave-pass film system is (1h)^ 8, and the central wavelength is 14,600 nm; l and h adopt a zinc sulphide film and a lead telluride film respectively; and the substrate is heated in vacuo and bombarded by an ion beam, the film systems are deposited on the two sides of the substrate respectively through resistance evaporation under the condition that argon is fed into an ion source, and the optical filter is prepared after cooling. The optical filter has a high transmittance when in a range from 10.3 mu m to 11.3 mu m, and has a large stop width in a range from 0.9 mu m to 10.15 mu m and in a range from 11.45 mu m to 20 mu m; further, the film layers are fewer, and using requirements of a remote sensing system are met; and the method is simple, convenient, stable, and high in yield.
Description
Technical field
The present invention relates to one 10.3 ~ 11.3 μm through LONG WAVE INFRARED optical filter and preparation method, specifically, relate to one, at 10.3 ~ 11.3 μm of spectral coverages, there is high permeability, simultaneously at the LONG WAVE INFRARED optical filter of 0.9 ~ 10.15 μm and 11.45 ~ 20 μm wide cut-off of spectral coverage; Belong to optical film technology field.
Background technology
The optical filter having high permeability at 10.3 ~ 11.3 μm of spectral coverages is a crucial optical filter in current remote sensing system.In order to reduce the impact of signal noise, need in remote sensing system to suppress the light signal of 0.9 ~ 10.15 μm and 11.45 ~ 20 μm spectral coverage.Therefore need design one badly, at 10.3 ~ 11.3 μm of spectral coverages, there is high permeability, 0.9 ~ 10.15 μm and 11.45 ~ 20 μm of wide cut-offs of spectral coverage, the good LONG WAVE INFRARED optical filter of film quality simultaneously.
Summary of the invention
At 10.3 ~ 11.3 μm of spectral coverages, there is high permeability, simultaneously at the LONG WAVE INFRARED optical filter of 0.9 ~ 10.15 μm and 11.45 ~ 20 μm wide cut-off of spectral coverage for there is no one in prior art.An object of the present invention be to provide a kind of 10.3 ~ 11.3 μm through LONG WAVE INFRARED optical filter, described optical filter has high permeability at 10.3 ~ 11.3 μm of spectral coverages, simultaneously 0.9 ~ 10.15 μm and 11.45 ~ 20 μm of wide cut-offs of spectral coverage.
Two of object of the present invention be to provide a kind of 10.3 ~ 11.3 μm through the preparation method of LONG WAVE INFRARED optical filter.
Object of the present invention is achieved through the following technical solutions.
One 10.3 ~ 11.3 μm is through LONG WAVE INFRARED optical filter, and described optical filter comprises substrate, the long-pass film system of substrate side and the short-pass film system of substrate opposite side.
Wherein, described base material is germanium, and preferred size is: long 29.5mm, wide 1.36mm, thick 1.2mm, and preferred surface smooth finish is 40/20;
Long-pass film system comprises zinc sulphide (ZnS) rete and lead telluride (PbTe) rete of alternately superposition, and structure is: (0.5hl0.5h) ^9(0.574l1.148h0.574l) ^5(0.36h0.72l0.36h) ^5, centre wavelength is 7300nm, wherein, h is lead telluride rete, 0.5, 1.148 and 0.36 coefficient being respectively the corresponding basic thickness of lead telluride thicknesses of layers, 0.5h represents that lead telluride thicknesses of layers is 0.5 basic thickness, 1.148h represents that lead telluride thicknesses of layers is 1.148 basic thickness, 0.36h represents that lead telluride thicknesses of layers is 0.36 basic thickness, l is zinc sulphide rete, 1, 0.574 and 0.72 coefficient being respectively the corresponding basic thickness of ZnS-film layer thickness, l represents that ZnS-film layer thickness is 1 basic thickness, 0.574l represents that ZnS-film layer thickness is 0.574 basic thickness, 0.72l represents that ZnS-film layer thickness is 0.72 basic thickness, described basic thickness is 1/4th of optical thickness centre wavelength, the periodicity of basic membrane stack (0.5hl0.5h) is 9, the periodicity of basic membrane stack (0.574l1.148h0.574l) and basic membrane stack (0.36h0.72l0.36h) is 5.
Adopt the structure of TFCalc software to described long-pass film system to be optimized, obtain preferred long-pass film system, as shown in table 1, wherein, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 39 rete be deposited in germanium substrate, be the innermost layer of long-pass film system;
Table 1 long-pass film system
Short-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately superposition, and structure is: (lh) ^8, and centre wavelength is 14600nm; Wherein, l is zinc sulphide rete, 1 is the coefficient of the corresponding basic thickness of ZnS-film layer thickness, l represents that ZnS-film layer thickness is 1 basic thickness, h is lead telluride rete, and 1 is the coefficient of the corresponding basic thickness of lead telluride thicknesses of layers, and h represents that lead telluride thicknesses of layers is 1 basic thickness, described basic thickness is 1/4th of optical thickness centre wavelength, and the periodicity of basic membrane stack (lh) is 8.
Adopt the structure of TFCalc software to described short-pass film system to be optimized, obtain preferred short-pass film system, as shown in table 2, wherein, the number of plies be 1 rete be the outermost layer of short-pass film system, the number of plies be 16 rete be deposited in germanium substrate, be the innermost layer of short-pass film system;
Table 2 short-pass film system
10.3 ~ 11.3 μm of preparation methods through LONG WAVE INFRARED optical filter of the present invention, described method step is as follows:
(1) clean substrate is loaded in clean vacuum chamber, be evacuated to 3.0 × 10
-3pa;
(2) substrate is heated to 150 DEG C, and keeps 30min;
(3) open the light-duty ion gun of Hall and lead to argon gas, airshed is 30sccm, and unlatching cathode voltage is 100 ~ 200V, and anode voltage is 50 ~ 100V, makes anode current be 0.5A; Adopt the zinc sulphide rete of reactive evaporation respectively in the side of substrate successively alternating deposit long-pass film system and lead telluride rete, at zinc sulphide rete successively in alternating deposit short-pass film system of the opposite side of substrate and lead telluride rete, until complete the deposition of described film system; Wherein, the rate of sedimentation of zinc sulphide rete is 2.0 ~ 3.0nm/s, and the rate of sedimentation of lead telluride rete is 0.8 ~ 1.0nm/s; Thicknesses of layers adopts the monitoring of light rule of three;
(4) substrate naturally cools to room temperature, obtain of the present invention 10.3 ~ 11.3 μm through LONG WAVE INFRARED optical filter.
Beneficial effect
1. the invention provides one 10.3 ~ 11.3 μm through LONG WAVE INFRARED optical filter, described optical filter reaches excellent technique index: have high permeability τ at 10.3 ~ 11.3 μm of spectral coverages
av>=80%, 0.9 ~ 10.15 μm and 11.45 ~ 20 μm of wide cut-offs of spectral coverage, cut-off degree of depth τ in cut-off region
λ<1%, half-power point wavelength franchise, within 50nm, greatly can be improved the passband of this spectral coverage optical filter and the characteristic of rejection zone, meet the request for utilization of remote sensing system, have high stability and high reliability;
2. the invention provides one 10.3 ~ 11.3 μm through LONG WAVE INFRARED optical filter, the film system of described optical filter comprises zinc sulphide rete and the lead telluride rete of alternately superposition, and the film system number of plies is less;
3. the invention provides a kind of 10.3 ~ 11.3 μm of preparation methods through LONG WAVE INFRARED optical filter, described method can obtain optical filter of the present invention, process stabilizing, reproducible, easy and simple to handle, and finished product rate is high.
Accompanying drawing explanation
Fig. 1 is the transmitted light spectrogram of optical filter in embodiment 1.
Embodiment
In order to absolutely prove characteristic of the present invention and implement mode of the present invention, provide embodiment below.
Embodiment 1
One 10.3 ~ 11.3 μm is through LONG WAVE INFRARED optical filter, and described optical filter comprises germanium substrate, the long-pass film system of substrate side and the short-pass film system of substrate opposite side.
Wherein, the long 29.5mm of described substrate, wide 1.36mm, thick 1.2mm, surface smoothness is 40/20.
Long-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately superposition, and centre wavelength is 7300nm; Each parameters of film is as shown in table 3, wherein, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 39 rete be deposited in germanium substrate, be the innermost layer of long-pass film system;
Table 3 long-pass film system and thicknesses of layers monitoring
Short-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately superposition, and centre wavelength is 14600nm, and each parameters of film is as shown in table 4, wherein, the number of plies be 1 rete be the outermost layer of short-pass film system, the number of plies be 16 rete be deposited in germanium substrate, be the innermost layer of short-pass film system;
Table 4 short-pass film system and thicknesses of layers monitoring
Preparation method's step of optical filter described in the present embodiment is as follows:
(1) remove impurity in vacuum chamber with suction cleaner, then dip in absolute ethyl alcohol wiped clean vacuum chamber inwall with absorbent gauze; With analysis pure acetone ultrasonic cleaning substrate 10min, then with analyzing the germanium substrate of straight alcohol ultrasonic cleaning substrate 10min, clean substrate being loaded in clean vacuum chamber, is evacuated to 3.0 × 10
-3pa;
(2) substrate is heated to 150 DEG C, and keeps 30min;
(3) open the light-duty ion gun of Hall and lead to argon gas, airshed is 30sccm, and unlatching cathode voltage is 100 ~ 200V, and anode voltage is 50 ~ 100V, makes anode current be 0.5A; Adopt the zinc sulphide rete of reactive evaporation respectively in the side of substrate successively alternating deposit long-pass film system and lead telluride rete, at zinc sulphide rete successively in alternating deposit short-pass film system of the opposite side of substrate and lead telluride rete, until complete the deposition of described film system; Wherein, the rate of sedimentation of zinc sulphide rete is 2.0 ~ 3.0nm/s, and the rate of sedimentation of lead telluride rete is 0.8 ~ 1.0nm/s; Thicknesses of layers adopts the monitoring of light rule of three, and supervisory wavelength and number of times are as shown in Table 3 and Table 4;
(4) substrate naturally cools to room temperature, obtains described in the present embodiment 10.3 ~ 11.3 μm through LONG WAVE INFRARED optical filter.
Following performance test is carried out to described optical filter:
Adopt the test of PE company system 2000 infrared Fourier spectrometer, obtain transmitted spectrum as shown in Figure 1, with UVWINLAB software, the spectral line in Fig. 1 is calculated, known described optical filter is 84.61% at the mean transmissivity of 10.3 ~ 11.3 μm of spectral coverages, be 0.43% He at the mean transmissivity of 0.9 ~ 10.15 μm of spectral coverage, the mean transmissivity of 1.45 ~ 20 μm of spectral coverages is 0.01%.
The present invention includes but be not limited to above embodiment, every any equivalent replacement of carrying out under the spirit and principles in the present invention or local improvement, all will be considered as within protection scope of the present invention.
Claims (9)
1. 10.3 ~ 11.3 μm through a LONG WAVE INFRARED optical filter, it is characterized in that: described optical filter comprises germanium substrate, the long-pass film system of substrate side and the short-pass film system of substrate opposite side;
Long-pass film system comprises zinc sulphide and the lead telluride rete of alternately superposition, and structure is: (0.5hl0.5h) ^9 (0.574l1.148h0.574l) ^5 (0.36h0.72l0.36h) ^5, and centre wavelength is 7300nm, h is lead telluride rete, 0.5h represents that lead telluride thicknesses of layers is 0.5 basic thickness, 1.148h represents that lead telluride thicknesses of layers is 1.148 basic thickness, 0.36h represents that lead telluride thicknesses of layers is 0.36 basic thickness, l is zinc sulphide rete, represent that ZnS-film layer thickness is 1 basic thickness, 0.574l represents that ZnS-film layer thickness is 0.574 basic thickness, 0.72l represents that ZnS-film layer thickness is 0.72 basic thickness, the periodicity of basic membrane stack (0.5hl0.5h) is 9, the periodicity of basic membrane stack (0.574l1.148h0.574l) and (0.36h0.72l0.36h) is 5,
Short-pass film system comprises zinc sulphide and the lead telluride rete of alternately superposition, and structure is: (lh) ^8, and centre wavelength is 14600nm; L is zinc sulphide rete, and represent that ZnS-film layer thickness is 1 basic thickness, h is lead telluride rete, and represent that lead telluride thicknesses of layers is 1 basic thickness, the periodicity of basic membrane stack (lh) is 8;
Described basic thickness is 1/4th of long-pass film system or short-pass film system optical thickness centre wavelength.
2. according to claim 1 a kind of 10.3 ~ 11.3 μm through LONG WAVE INFRARED optical filter, it is characterized in that: the long 29.5mm of substrate, wide 1.36mm, thick 1.2mm; Surface smoothness is 40/20.
3. according to claim 1 and 2 a kind of 10.3 ~ 11.3 μm through LONG WAVE INFRARED optical filter, it is characterized in that: long-pass film system is as shown in table 1, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 39 rete be deposited in substrate, be the innermost layer of long-pass film system;
Table 1 long-pass film system
4. according to claim 1 and 2 a kind of 10.3 ~ 11.3 μm through LONG WAVE INFRARED optical filter, it is characterized in that: short-pass film system is as shown in table 2, the number of plies be 1 rete be the outermost layer of short-pass film system, the number of plies be 16 rete be deposited in substrate, be the innermost layer of short-pass film system;
Table 2 short-pass film system
5. according to claim 4 a kind of 10.3 ~ 11.3 μm through LONG WAVE INFRARED optical filter, it is characterized in that: long-pass film system is as shown in table 1, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 39 rete be deposited in substrate, be the innermost layer of long-pass film system;
Table 1 long-pass film system
6. as claimed in claim 1 or 2 10.3 ~ 11.3 μm through a preparation method for LONG WAVE INFRARED optical filter, it is characterized in that: described method step is as follows:
(1) clean substrate is loaded in clean vacuum chamber, be evacuated to 3.0 × 10
-3pa;
(2) substrate is heated to 150 DEG C, and keeps 30min;
(3) open the light-duty ion gun of Hall and lead to argon gas, airshed is 30sccm, and unlatching cathode voltage is 100 ~ 200V, and anode voltage is 50 ~ 100V, makes anode current be 0.5A; Adopt reactive evaporation respectively in substrate both sides deposition long-pass film system and short-pass film system; The rate of sedimentation of zinc sulphide rete is 2.0 ~ 3.0nm/s, and the rate of sedimentation of lead telluride rete is 0.8 ~ 1.0nm/s; Thicknesses of layers adopts the monitoring of light rule of three;
(4) substrate naturally cools to room temperature, obtains 10.3 ~ 11.3 μm through LONG WAVE INFRARED optical filter.
7. a kind of 10.3 ~ 11.3 μm of preparation methods through LONG WAVE INFRARED optical filter according to claim 6, it is characterized in that: long-pass film system and thicknesses of layers are monitored as shown in table 3, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 39 rete be deposited in substrate, be the innermost layer of long-pass film system;
Table 3 long-pass film system and thicknesses of layers monitoring
8. a kind of 10.3 ~ 11.3 μm of preparation methods through LONG WAVE INFRARED optical filter according to claim 6, it is characterized in that: short-pass film system and thicknesses of layers are monitored as shown in table 4, the number of plies be 1 rete be the outermost layer of short-pass film system, the number of plies be 16 rete be deposited in substrate, be the innermost layer of short-pass film system;
Table 4 short-pass film system and thicknesses of layers monitoring
9. a kind of 10.3 ~ 11.3 μm of preparation methods through LONG WAVE INFRARED optical filter according to claim 8, it is characterized in that: long-pass film system and thicknesses of layers are monitored as shown in table 3, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 39 rete be deposited in substrate, be the innermost layer of long-pass film system;
Table 3 long-pass film system and thicknesses of layers monitoring
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| CN105137514B (en) * | 2015-09-11 | 2017-07-28 | 兰州空间技术物理研究所 | 4.2~4.45 μm pass through medium-wave infrared optical filter and preparation method |
| CN106324738B (en) * | 2016-11-04 | 2019-02-01 | 天津津航技术物理研究所 | A kind of LONG WAVE INFRARED optical filter and preparation method thereof |
| CN114460677B (en) * | 2022-04-13 | 2022-09-16 | 翼捷安全设备（昆山）有限公司 | Infrared filter for MEMS black body packaging and preparation method thereof |
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