CN110879435B - Medium-long wave infrared wide spectrum color separation sheet with zinc selenide crystal as substrate - Google Patents
Medium-long wave infrared wide spectrum color separation sheet with zinc selenide crystal as substrate Download PDFInfo
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- CN110879435B CN110879435B CN201911124487.3A CN201911124487A CN110879435B CN 110879435 B CN110879435 B CN 110879435B CN 201911124487 A CN201911124487 A CN 201911124487A CN 110879435 B CN110879435 B CN 110879435B
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- 238000000926 separation method Methods 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 238000001228 spectrum Methods 0.000 title claims abstract description 21
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 239000013078 crystal Substances 0.000 title claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims abstract description 13
- 230000003287 optical effect Effects 0.000 claims description 17
- 239000012528 membrane Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 6
- 238000002834 transmittance Methods 0.000 abstract description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 abstract description 5
- 239000005083 Zinc sulfide Substances 0.000 abstract description 4
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052732 germanium Inorganic materials 0.000 abstract description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 230000003595 spectral effect Effects 0.000 abstract description 3
- XASAPYQVQBKMIN-UHFFFAOYSA-K ytterbium(iii) fluoride Chemical compound F[Yb](F)F XASAPYQVQBKMIN-UHFFFAOYSA-K 0.000 abstract description 3
- 238000003331 infrared imaging Methods 0.000 abstract description 2
- 238000000869 ion-assisted deposition Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 46
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000007735 ion beam assisted deposition Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
Abstract
The invention discloses a medium-long wave infrared wide spectrum color separation sheet taking zinc selenide crystals as a substrate, wherein a main film system of an incidence surface, namely a color separation surface, of the color separation sheet adopts a long-wave pass filter type film system structure, and germanium and zinc sulfide are used as materials with high and low refractive indexes. The double-reflector stack is used for realizing broadband reflection, matching layers are added at two ends of the main film system, ytterbium fluoride is used in the matching layers, transmittance of a transmission waveband is improved after the matching layers are optimized, and passband ripples are compressed; the back surface is designed with a broad spectrum antireflection film to obtain high transmittance of a transmission waveband. The color separation sheet adopts specific processes such as proper deposition temperature, deposition rate, ion-assisted deposition and the like in the preparation process. Under the condition that light beams are obliquely incident at an angle of 45 degrees, the color separation sheet can realize high reflection in a broad band of 4.6-7.7 mu m and high transmission in a broad band of 8.1-15.5 mu m. The color separation plate has stable performance and good reliability, and is suitable for spectral light splitting in an infrared imaging system in the atmospheric radiation hyperspectral detection technology.
Description
Technical Field
The invention relates to an optical thin film technology, in particular to a medium-long wave infrared wide spectrum color separation sheet taking a zinc selenide crystal as a substrate, wherein a color separation film with a spectrum light-splitting function is prepared on an incidence surface of the zinc selenide substrate, and a wide spectrum antireflection film is prepared on the back surface of the substrate, so that high reflection in a wide band of 4.6-7.7 mu m and high transmission in a wide spectrum band of 8.1-15.5 mu m are realized.
Technical Field
An infrared spectrum imager is one of main detection loads on an earth observation satellite, and in a multichannel infrared remote sensing imaging spectrometer, in order to enable optical signals in different wave band ranges to be received by appropriate detectors and imaged respectively, a color separation film is generally adopted for spectral light splitting to realize direction-changing transmission of the optical signals. By designing a medium/long wave color separation sheet, infrared light in a wide spectrum waveband is separated into two different light paths according to system requirements, namely, the infrared light is reflected by 4.6-7.7 micrometers and is transmitted by 8.1-15.5 micrometers.
Because the color separation plate needs to have good stability and reliability, and because the wavelength end of the transmission band of the color separation plate exceeds 15.0 mu m, the factors of the light transmission area, the mechanical strength, the environmental stability and the like are comprehensively considered, and the zinc selenide crystal with wide light transmission range, excellent optical uniformity, good mechanical strength and stability is selected as a substrate material in the area. The upper membrane layer material is designed to select germanium, zinc sulfide and ytterbium fluoride which have small absorption in the working waveband and good environmental stability. The color separation plate has important significance for an infrared imaging system in the atmospheric radiation hyper-spectrum detection technology.
Disclosure of Invention
The invention aims to provide a medium-long wave infrared broad spectrum color separation sheet taking a zinc selenide crystal as a substrate, which is used for separating a 4.6-15.5 mu m infrared broad spectrum to meet the spectrum light separation requirement in the atmospheric radiation hyper-spectrum detection technology.
The technical scheme of the invention is as follows: preparing a color separation film on the incident surface of the zinc selenide substrate and preparing a wide-spectrum antireflection film on the back surface of the substrate.
The incident surface (i.e. the color separation surface) of the color separation plate adopts a long-wave pass filter type film system structure, and germanium and zinc sulfide are used as high-refractive index materials. Because the color separation film needs to satisfy broadband reflection under large-angle (45-degree angle) incidence, a double-reflector stack is adopted in the film system structure. Matching layers are added at two ends of the main film system and used as an initial film system, and the matching layers are optimized to improve the transmittance of a transmission waveband and compress passband ripples to obtain an available film system which meets the spectrum requirement and is beneficial to film thickness monitoring; the back surface is designed with a broad spectrum antireflection film to obtain high transmittance of a transmission waveband.
According to the above analysis, the implementation of the color separation chip comprises the following steps:
1. structure of membrane system
The film system structure of the color separation film (1) is as follows:
substrate/1.2N 0.475H 2.273N (0.67N 1.34H 0.67N)8(0.55N 1.1H 0.55N)60.52N0.258L 1.117N 1.465L 0.23N/air
The film system structure of the broad spectrum antireflection film (3) is as follows:
substrate/0.864N 0.282L 1.732N 2.035L 0.477N/air
In the formula: n represents an optical thickness of λ0A ZnS film layer of/4; h represents an optical thickness of λ0A Ge film layer of/4; l represents an optical thickness of λ0YbF of/43A film layer; lambda [ alpha ]0Is the center wavelength; the number preceding N, H, L is λ0Per 4 coefficient of proportionality of optical thickness(ii) a Indices 8 and 6 indicate the number of reflector periods.
2. Film preparation method
The preparation of the film layer is carried out on box type vacuum coating equipment with a diffusion pump system, H adopts electron beam evaporation deposition, N, L adopts resistance heating evaporation deposition, part of the film layer adopts ion beam auxiliary deposition, the ion source is MarkII, and the specific parameters are as follows: the anode voltage is 130-150V, and the cathode current is 14-16A. The analysis of the film layer material test result shows that: when the temperature of the substrate is controlled at 200 ℃, the film layer has good firmness; when the temperature is too high, the deposition of zinc sulfide on a substrate is not facilitated, and when the temperature is too low, a thicker ytterbium fluoride film is easily cracked and even stripped.
The invention has the following beneficial effects:
1. the invention provides a medium-long wave infrared wide spectrum color separation sheet with a zinc selenide crystal as a substrate, which is an indispensable optical element of an infrared camera in the atmospheric radiation hyper-spectrum detection technology and has important significance for spectrum light separation.
2. The invention adopts a specific process, reduces the absorption of the film material at a long wave end, ensures the transmittance of a transmission region in a wide spectral range, and improves the space reliability.
3. The technical scheme of the invention is reasonable and feasible, the product performance is stable, and the method can be widely applied to an infrared hyperspectral camera system.
Drawings
Fig. 1 is a schematic diagram of a film structure of a color separation sheet, in which:
1-a color separation film;
2-a zinc selenide substrate;
3-wide spectrum antireflection film
FIG. 2 is a graph of measured transmittance spectra for the color chips.
FIG. 3 is a measured reflectance spectrum curve of a color separation chip.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
The substrate material is zinc selenide crystal.
According to the technical requirements, the technical scheme that the color separation film is prepared on the incident surface of the zinc selenide substrate and the broad spectrum antireflection film is prepared on the back surface of the substrate is adopted. The dichroic film is designed by considering both the reflectivity in a broadband range and the high transmission requirement in a long-wave broadband spectrum range, so that the main film of the dichroic film adopts a long-wave pass filter type film system structure, and matching layers are added on two sides of the main film system to serve as an initial film system. The thickness of each key layer is controlled through local optimization, and a usable film system is obtained; the broad spectrum antireflection film designed on the back surface also follows the principle. The final film is:
n0/0.23N 1.465L 1.117N 0.258L 0.52N(0.55N 1.1H 0.55N)6(0.67N 1.34H 0.67N)8 2.273N 0.475H 1.2N/ns/0.864N 0.282L 1.732N 2.035L 0.477N/n0in the formula: n issIs a substrate; n is0Is air; n represents an optical thickness of λ0A ZnS film layer of/4; h represents an optical thickness of λ0A Ge film layer of/4; l represents an optical thickness of λ0YbF of/43A film layer; lambda [ alpha ]0Is the center wavelength; the number preceding N, H, L is λ0A/4 proportionality coefficient of optical thickness; indices 8 and 6 indicate the number of reflector periods.
In this embodiment, the development of the film system of the color separation sheet is performed at a substrate temperature of 200 ℃, three coating materials are deposited by electron beam evaporation and resistance evaporation, and the local film layer is deposited by ion beam assisted deposition.
As can be seen from FIGS. 2 and 3, the average reflectivity of the medium-long wave infrared broad spectrum color separation plate using zinc selenide crystal as the substrate is 96% in the waveband of 4.6-7.7 μm, the average transmissivity is 93% in the waveband of 8.1-13.0 μm, and the average transmissivity is 85% in the waveband of 13.01-15.5 μm, so that the use requirement of an infrared camera in atmospheric radiation hyper-spectrum detection can be met.
Claims (1)
1. The utility model provides an use intermediate-long wave infrared broad spectrum color separation piece of zinc selenide crystal as basement, color separation piece can realize high reflection in the broadband of 4.6 ~ 7.7 mu m, high transmission in the broadband of 8.1 ~ 15.5 mu m, it prepares color separation membrane (1) that has spectrum beam splitting function on zinc selenide basement (2) incident surface, prepares broad spectrum antireflection film (3) at the contralateral face of zinc selenide basement (2) incident surface, its characterized in that:
the film system structure of the color separation film (1) is as follows:
substrate/1.2N 0.475H 2.273N (0.67N 1.34H 0.67N)8(0.55N 1.1H 0.55N)60.52N0.258L 1.117N 1.465L 0.23N/air
The film system structure of the broad spectrum antireflection film (3) is as follows:
substrate/0.864N 0.282L 1.732N 2.035L 0.477N/air formula: n represents an optical thickness of λ0A ZnS film layer of/4; h represents an optical thickness of λ0A Ge film layer of/4; l represents an optical thickness of λ0YbF of/43A film layer; lambda [ alpha ]0The central wavelength of the film system where each film layer is located; the number preceding N, H, L is λ0A/4 proportionality coefficient of optical thickness; indices 8 and 6 indicate the number of reflector periods.
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| CN201911124487.3A CN110879435B (en) | 2019-11-18 | 2019-11-18 | Medium-long wave infrared wide spectrum color separation sheet with zinc selenide crystal as substrate |
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| CN201911124487.3A CN110879435B (en) | 2019-11-18 | 2019-11-18 | Medium-long wave infrared wide spectrum color separation sheet with zinc selenide crystal as substrate |
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| CN110879435B true CN110879435B (en) | 2021-08-06 |
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| CN112162340B (en) * | 2020-09-15 | 2022-03-29 | 中国科学院上海技术物理研究所 | Infrared broad spectrum color separation sheet using germanium as substrate and inclined at 45-degree angle |
| CN115201941B (en) * | 2021-04-13 | 2023-09-12 | 中国科学院上海技术物理研究所 | Efficient infrared wide-spectrum antireflection film suitable for space environment |
| CN113670441A (en) * | 2021-08-11 | 2021-11-19 | 中国科学院光电技术研究所 | Long-wave infrared multispectral imaging device based on filter array and design method thereof |
| CN114047571B (en) * | 2021-11-23 | 2023-09-19 | 中国航空工业集团公司洛阳电光设备研究所 | Infrared short wave cut-off filter |
| CN114460677B (en) * | 2022-04-13 | 2022-09-16 | 翼捷安全设备（昆山）有限公司 | Infrared filter for MEMS black body packaging and preparation method thereof |
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