CN104035147B - Take germanium as the LONG WAVE INFRARED anti-reflection film with sunshine reflection function of substrate - Google Patents
Take germanium as the LONG WAVE INFRARED anti-reflection film with sunshine reflection function of substrate Download PDFInfo
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- CN104035147B CN104035147B CN201410259004.1A CN201410259004A CN104035147B CN 104035147 B CN104035147 B CN 104035147B CN 201410259004 A CN201410259004 A CN 201410259004A CN 104035147 B CN104035147 B CN 104035147B
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Abstract
The invention discloses a kind of take germanium as the LONG WAVE INFRARED anti-reflection film with sunshine reflection function of substrate, this anti-reflection film be coated on Ge be matrix material optical lens on, light vertical incidence.Before Film Design adopts, cutoff filter is basic structure, and the acquisition of employing asymmetric equivalent layer is mated with substrate refractive index.High low-index material using ZnS and YF3 as main film system, ZnS and Ge is as equivalent layer material.Have employed the special processes such as ion gun is assisted, suitable base reservoir temperature in preparation process.The solar irradiation of visible ray and near-infrared band can reflect away by this anti-reflection film as far as possible, and by LONG WAVE INFRARED radiation transmission as far as possible.The present invention has the LONG WAVE INFRARED anti-reflection film stable performance of sunshine reflection function, and the solar protection window being suitable for the Small Long-Life optical sensor of middle high orbit application uses, and also can be used as the color separation film of multispectral infrared camera.
Description
Technical field
The present invention relates to optical film technique, specifically refer to that a kind of to be substrate with Ge crystal reflect the solar radiation of 0.4-1.4 μm; Infrared radiation within the scope of 14-16 μm is carried out to the LONG WAVE INFRARED anti-reflection film of transmission.
Technical background
For the Small Long-Life optical attitude sensor working in the application of middle high orbit, due to longer by time of sun direct projection, solar radiation has a strong impact on the duty of optical sensor by causing device temperature to raise, even may therefore blinding.Therefore the optical system of such optical sensor have employed the infrared optical system with solar protection function, and wherein the optical thin film element of most critical is exactly the LONG WAVE INFRARED anti-reflection film with sunshine reflection function that the present invention discusses.The solar irradiation of visible ray and near-infrared band mainly reflected away by the optical thin film being coated with difference in functionality by its solar protection function as far as possible, and by long wave infrared region as far as possible transmission realize.Therefore, the performance of this long wave anti-reflection film and system performance index close relation, its long-life space application succeeded in developing for Small Long-Life optical attitude sensor is significant.
Summary of the invention
The object of this invention is to provide a kind of LONG WAVE INFRARED anti-reflection film with sunshine reflection function being substrate with Ge crystal, the solar radiation of 0.4-1.4 μm is reflected; Transmission is carried out to the infrared radiation within the scope of 14-16 μm, to eliminate the sun direct projection impact suffered by the Small Long-Life optical attitude sensor of middle high rail work, thus realizes the normal operation of load at middle high rail.
Technical scheme of the present invention is: before adopting, cutoff filter is basic structure, and the acquisition of employing asymmetric equivalent layer is mated with substrate refractive index.
Because reflected waveband requires that reflectivity is high as far as possible, solar irradiation impact is dropped to minimum.And LONG WAVE INFRARED is service band, require that transmissivity is high as far as possible, rete is except will carrying out conventional environmental simulation test inspection simultaneously, and also requirement can stand space radiation test.Technology needs on realizing to consider:
1) reflected waveband belongs to ultra wide bandwidth, and when not only ensureing reflectivity but also ensure transmissivity, Film Design difficulty increases, and thicknesses of layers thickens and will bring a series of integrity problem simultaneously;
2) film material requires all will have good light transmission, to ensure that film product has good optical property in visible near-infrared and LONG WAVE INFRARED; Film material must have good environment friendly, to ensure that film product has good space reliability simultaneously.Meet the film material required so very limited;
3) stress of film material is very large for the impact of reliability, needs to carry out process modification.
Comprehensive above 3 points, the present invention adopts all dielectric rete on Film Design, and before structure adopts, cut-off adds the scheme of matching layer.Select ZnS and YF
3as the high low-index material of reflective stack.Adopt asymmetric equivalent layer to realize, with the index matching of substrate, obtaining available film system finally by software optimization, controlled the thickness of extremely indivedual key stratum simultaneously by local optimum, realize the function of anti-visible near-infrared LONG WAVE INFRARED.In addition process modification is carried out to film material, reduce stress influence, to improve space reliability.
According to above analysis, the realization of this LONG WAVE INFRARED anti-reflection film comprises the following steps:
1. the structure of film system
The film with the LONG WAVE INFRARED antireflective coating of sunshine reflection function is:
n
s/3.027N 3.122H 3.302N(0.65N 1.3L 0.65N)
5(0.55N 1.1L 0.55N)
5(0.45N0.9L0.45N)
6(0.35N 0.7L0.35N)
64.035N 3.144L 9.275N/n
0
In formula, the implication of each symbol is respectively: n
sfor substrate; n
0for air; L represents that optical thickness is λ
0the YF of/4
3rete; H represents that optical thickness is λ
0the Ge rete of/4; N represents that optical thickness is λ
0the ZnS rete of/4; λ
0centered by wavelength; Numeral before N, H, L is λ
0/ 4 optical thickness scale-up factor multipliers, index is the periodicity of membrane stack in corresponding bracket.
2. Film preparation method
Film preparation carries out on the box type vacuum filming equipment with diffusion pump system, Ge, YF
3adopt electron-beam evaporation, ZnS adopts resistance heating evaporation deposition, and overall process adopts ion beam assisted depositing, and ion gun is Hall source, and design parameter is: anode voltage 200V, cathode current 14A.Shown by film material test result analysis: base reservoir temperature controls 190 DEG C time, and rete has good optical property and firmness; At such a temperature, Ge and YF of electron-beam evaporation gained
3rete has finer and close structure, and simultaneously long wave end absorbs also resistivity to steam the absorption of deposition gained rete little.Ion beam assisted depositing, for reduction film inter-laminar stress, improves rete reliability and has vital role.
Beneficial effect of the present invention is as follows:
1. the invention provides a kind of LONG WAVE INFRARED anti-reflection film with sunshine reflection function being substrate with Ge crystal, high-efficiency reflective is carried out in the solar radiation that can realize 0.4-1.4 μm; High efficiency transmission is carried out to the LONG WAVE INFRARED radiation within the scope of 14-16 μm simultaneously.
2. present invention employs special process, reduce the absorption of material at long wave end, improve optical efficiency and space reliability.
3. technical scheme reasonable of the present invention, properties of product are stablized, and can be widely used in Small Long-Life optical attitude sensor and multispectral infrared camera.
Accompanying drawing explanation
Fig. 1 is compound anti-reflection film film layer structure schematic diagram, in figure:
1-there is the LONG WAVE INFRARED antireflective coating of sunshine reflection function;
2-Ge substrate;
3-back side long wave antireflecting film.
Fig. 2 a is the LONG WAVE INFRARED anti-reflection film visible near-infrared wave band actual measurement reflectance curve with sunshine reflection function; B is long wave infrared region actual measurement transmittance graph.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
The concrete technical requirement of the embodiment of the present invention is:
0.4 ~ 1.4 μm, R (on average) >90%;
14 ~ 16 μm, T (on average) >85%
According to technical requirement, using crystal for infrared use Ge as substrate, realize 0.4 ~ 1.4 μm anti-high, 14 ~ 16 μm high, first it is transparent for will considering that material selection will meet at service band, secondly Film Design and technological design will consider the inhalation effects reducing the concentrated of stress in thin film and long wave end material as far as possible, therefore suitable rete process for plating is extremely important.Film system (1) design adopts all dielectric rete, and before structure adopts, cut-off adds the scheme of matching layer.Select ZnS and YF
3as the high low-index material of reflective stack.Adopt asymmetric equivalent layer to realize, with the index matching of substrate, obtaining available film system finally by software optimization, controlled the thickness of extremely indivedual key stratum simultaneously by local optimum, realize the function of anti-visible near-infrared LONG WAVE INFRARED.Final film is:
n
s/3.027N 3.122H 3.302N(0.65N 1.3L0.65N)
5(0.55N 1.1L 0.55N)
5(0.45N0.9L0.45N)
6(0.35N0.7L 0.35N)
64.035N 3.144L 9.275N/n
0
In formula, the implication of each symbol is respectively: n
sfor substrate; n
0for air; L represents that optical thickness is λ
0the YF of/4
3rete; H represents that optical thickness is λ
0the Ge rete of/4; N represents that optical thickness is λ
0the ZnS rete of/4; λ
0centered by wavelength; Numeral before N, H, L is λ
0/ 4 optical thickness scale-up factor multipliers, index is the periodicity of membrane stack in corresponding bracket.
In the present embodiment, base reservoir temperature controls at 190 DEG C, Ge, YF
3adopt electron-beam evaporation, ZnS adopts resistance heating evaporation deposition, and overall process adopts ion beam assisted depositing.
As can be seen from Figure 2, the LONG WAVE INFRARED anti-reflection film of what the present invention developed have sunshine reflection function and back side long wave antireflection film layer 3 acting in conjunction achieve average reflectance in 0.4 ~ 1.4 μm of spectral range and are greater than 90%; In 14 ~ 16 μm of spectral ranges, average transmittance is greater than 85%.The LONG WAVE INFRARED anti-reflection film of what therefore the present invention developed have sunshine reflection function can reach the request for utilization of Small Long-Life optical attitude sensor.
Claims (1)
1. one kind take germanium as the LONG WAVE INFRARED anti-reflection film with sunshine reflection function of substrate, it prepares the LONG WAVE INFRARED antireflective coating (1) with sunshine reflection function in the one side of Ge substrate (2), prepare back side long wave antireflecting film (3) at another side, it is characterized in that:
The described film structure with the LONG WAVE INFRARED antireflective coating (1) of sunshine reflection function is:
n
s/3.027N3.122H3.302N(0.65N1.3L0.65N)
5(0.55N1.1L0.55N)
5(0.45N0.9L0.45N)
6(0.35N0.7L0.35N)
64.035N3.144L9.275N/n
0
In formula: n
sfor substrate; n
0for air; L represents that optical thickness is λ
0the YF of/4
3rete; H represents that optical thickness is λ
0the Ge rete of/4; N represents that optical thickness is λ
0the ZnS rete of/4; λ
0centered by wavelength; Numeral before N, H, L is λ
0/ 4 optical thickness scale-up factor multipliers, index is the periodicity of membrane stack in corresponding bracket.
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| CN201410259004.1A CN104035147B (en) | 2014-06-12 | 2014-06-12 | Take germanium as the LONG WAVE INFRARED anti-reflection film with sunshine reflection function of substrate |
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| CN104035147B true CN104035147B (en) | 2015-09-30 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105842857B (en) * | 2016-04-28 | 2018-04-03 | 西安应用光学研究所 | A kind of anti-0.5~0.8 μm of visible ray of ZnS substrates and the film structure of 1.064 μm of laser and saturating 3.7~4.8 μm of medium-wave infrared dichroic coatings |
| CN107367776B (en) * | 2017-09-06 | 2019-08-16 | 天津津航技术物理研究所 | A kind of infrared optical window film design method that heat radiation is controllable |
| CN108227048B (en) * | 2018-01-26 | 2019-11-05 | 河南师范大学 | A kind of low-launch-rate infrared anti-reflection film on Silicon Wafer |
| CN108627889B (en) * | 2018-04-11 | 2021-01-15 | 上海欧菲尔光电技术有限公司 | Germanium substrate wide-spectrum infrared anti-reflection optical window |
| CN112162340B (en) * | 2020-09-15 | 2022-03-29 | 中国科学院上海技术物理研究所 | Infrared broad spectrum color separation sheet using germanium as substrate and inclined at 45-degree angle |
| CN115079314B (en) * | 2022-07-25 | 2024-01-16 | 无锡泓瑞航天科技有限公司 | Mid-infrared spectrum optical window suitable for low-temperature and high-temperature environments |
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| CN102213777A (en) * | 2010-04-02 | 2011-10-12 | 富士胶片株式会社 | Anti-reflection film and infrared optical element |
| CN202305860U (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | Infrared filter capable of transmitting 5,500 nanometer long wave |
| CN104035146A (en) * | 2014-06-12 | 2014-09-10 | 中国科学院上海技术物理研究所 | Medium-short-wave infrared antireflection film on tellurium dioxide substrate |
| CN203965649U (en) * | 2014-06-12 | 2014-11-26 | 中国科学院上海技术物理研究所 | A kind ofly take the LONG WAVE INFRARED anti-reflection film with sunshine reflection function that germanium is substrate |
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| JP2003075601A (en) * | 2001-08-30 | 2003-03-12 | Sumitomo Osaka Cement Co Ltd | Transfer material for antireflection, method for manufacturing the same, formed article by using the same and method for manufacturing the same |
| JP2006078710A (en) * | 2004-09-09 | 2006-03-23 | Tomoegawa Paper Co Ltd | Antiglare film |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102213777A (en) * | 2010-04-02 | 2011-10-12 | 富士胶片株式会社 | Anti-reflection film and infrared optical element |
| CN202305860U (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | Infrared filter capable of transmitting 5,500 nanometer long wave |
| CN104035146A (en) * | 2014-06-12 | 2014-09-10 | 中国科学院上海技术物理研究所 | Medium-short-wave infrared antireflection film on tellurium dioxide substrate |
| CN203965649U (en) * | 2014-06-12 | 2014-11-26 | 中国科学院上海技术物理研究所 | A kind ofly take the LONG WAVE INFRARED anti-reflection film with sunshine reflection function that germanium is substrate |
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