CN104553221B - High-performance optical spectral selectivity inhales ripple element and solar thermal photovoltaic system - Google Patents
High-performance optical spectral selectivity inhales ripple element and solar thermal photovoltaic system Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a kind of high-performance optical spectral selectivity and inhale ripple element and solar thermal photovoltaic system, including metallic substrates, low refractive index dielectric the first film, high-index semiconductor nano square array, low refractive index dielectric the second thin film and low refractive index dielectric the 3rd thin film；Low refractive index dielectric the first film uniform fold is on the metallic substrate, the high-index semiconductor nano square array of checkerboard periodic arrangement is built on it, between high-index semiconductor nano square array, fill low refractive index dielectric the second thin film, cover low refractive index dielectric the 3rd thin film at its top.The present invention is by designing the structure of metal surface dielectric film, it is thus achieved that good spectral selection；By selecting different metal, quasiconductor, dielectric material, and (or) change structural parameters, it is achieved cutoff wavelength regulation and control flexibly and spectral selection；Present disclosure applies equally to resistant to elevated temperatures metal, quasiconductor, dielectric material, can be used widely in solar thermal photovoltaic system.
Description
Technical field
The present invention relates to heliotechnics and application, particularly relate to a kind of solar thermal photovoltaic system of can be applicable to
Spectral selection inhales ripple element.
Background technology
How solar energy, as the clean energy resource of the maximum of reserves in the world, has the most worldwide attracted extensive concern
Solar energy is efficiently and effectively utilized to directly influence the sustainable development of the mankind.Tradition solar energy industry is generally basede on solar energy
Photovoltaic technology, utilizing semiconductor diode to be converted into by incident sunlight can be the electric energy that directly use of the mankind.But this technology
The highest to the utilization rate of solar energy, it is limited to Schockley-Queisser(SQ) limiting: energy is less than quasiconductor band gap width
Incident photon can not be by semiconductor absorber；And the portion of energy higher than quasiconductor band gap width of high-energy incident photon will be with
Thermal relaxation mode dissipates.Even if in the ideal case, on the premise of not considering nonradiative loss, unijunction solar cell (is prohibited
Bandwidth 1.1 eV) total focus high conversion efficiency also be only 41%.Limit to break through SQ, it has been proposed that at photovoltaic electric
Place selectivity before pond and inhale ripple-radiating element, utilize selectivity to inhale ripple element and absorb the selectivity that sunlight makes to be attached thereto
Radiating element temperature raises (1000-2000 K), optionally radiates to rearmounted battery and to match with this battery energy gap
Photon, the most rearmounted battery just can reach the highest conversion efficiency.This system is referred to as solar thermal photovoltaic system, its theoretical limit
Efficiency, up to 85%, limits the numerical value provided far above SQ.Wherein, selectivity suction ripple element determines preposition selectivity suction ripple-spoke
Penetrate the radiated photons energy of the accessible maximum temperature of unit and selective radiation element, be the core devices of this system.Root
According to Kirchhoff's law, the absorption efficiency of object is equal to the radiation efficiency under thermal equilibrium condition.Therefore, to keep constant height
Temperature state, selectivity inhales the absorption spectra of ripple element must have good spectral selection, it is desirable to it can sunlight covering
See that light near infrared band has a highest absorption, and in long-wave band, there is alap absorption (namely extremely low spoke
Penetrate loss).Additionally, high-temperature work environment requires that selectivity is inhaled ripple element and must be used exotic material.
About the existing many reports of the research inhaling ripple element, wherein, suction has greatly been widened in the use of artificial electromagnetic medium
The mentality of designing of ripple device.Landy et al. proposes Single wavelength perfection based on artificial electromagnetic medium first and inhales ripple element (N. I.
Landy, et al, Phys. Rev. Lett. 100,207402,2008.).By electricity, magnetic resonance and impedance matching,
The incident illumination of specific wavelength can be absorbed by this artificial electromagnetic medium perfection.Change cellular construction shape and size, can adjust flexibly
Control its resonant wavelength namely absorption peak wavelength.The resonator cavity of different size and different resonance wavelength is reasonably placed on one
Rise, can expand to a certain extent its absorption spectra scope (Y. Q. Ye, et al, J. Opt. Soc. Am. B 27,
498,2010.).We are also it is proposed that narrow slit wave-guide optical grating construction of based on multiple optics effect achieves 300-1400 nm
Wide band absorption (F. Zhang, et al, Progress In Electromagnetics Research 134,95
(2013) .).In order to expand its bandwidth of operation further, S ndergaard et al. proposes and receives based on slit surface plasma
Rice focusing effect disresonance broadband inhale ripple element (T. S ndergaard, et al, Nat. Commun. 3,969,
2012.).Zigzag artificial electromagnetic medium structure based on slow light effect design can realize from visible ray-near-infrared-mid-infrared
Ultra broadband absorbs (F. Ding, et al, Laser Photon. Rev. 8,946 (2014) .).But, the above is inhaled
Ripple element can not meet the needs of solar thermal photovoltaic system, and they do not have a good spectral selection: narrow absorption
It is low that spectrum may result in sunlight absorption efficiency, and wide absorption spectra can cause the heat radiation damage inhaling ripple element in long-wave band
Consumption.And the material that used of above-mentioned suction ripple element can not meet the high temperature demands of solar thermal photovoltaic system.“V.
Rinnerbauer, et al, Adv. Energy Mater. 4,1400334 (2014). " and " Y. Nam, et al,
Sol. Energy Mater. Sol. Cells 122,287,2014. " these two articles all report based on tungsten or tantalum light
The selectivity of sub-crystal structure inhales ripple element, although they solve high temperature problem, but the spectral selection of photon crystal structure
Do not highlight.
Summary of the invention
It is an object of the invention to, for the deficiencies in the prior art, provide a kind of high-performance spectrum for solar thermal photovoltaic system
Selectivity inhales ripple element.
A kind of high-performance optical spectral selectivity inhales ripple element, and it includes metallic substrates, low refractive index dielectric the first film, high folding
Penetrate rate semiconductor nano square array, low refractive index dielectric the second thin film, low refractive index dielectric the 3rd thin film；Low refractive index dielectric
The first film uniform fold on the metallic substrate, low refractive index dielectric the first film builds the high refraction of checkerboard periodic arrangement
Rate semiconductor nano square array, exposes low refractive index dielectric the first film between high-index semiconductor nano square array
Depressed area fill low refractive index dielectric the second thin film, high-index semiconductor nano square array top and fill area all cover
Low refractive index dielectric the 3rd thin film.
Described low refractive index dielectric the first film, low refractive index dielectric the second thin film, low refractive index dielectric the 3rd thin film
Refractive index be below the refractive index of high-index semiconductor nano square array.
Described low refractive index dielectric the first film, low refractive index dielectric the second thin film, low refractive index dielectric the 3rd thin film
For different medium material or same material.
Described metallic substrates, thickness is more than incident illumination attenuation length wherein, as metallic mirror to cut-off wave
Long-wave band incident illumination beyond length is modulated, and also serves as the selective radiation unit that hot conductor transfers heat to be attached thereto
Part.
Described high-index semiconductor nano square Array Construction, on low refractive index dielectric the first film, is used for selecting
Property absorb incident sunlight, change size and material, the spectral selection of this structure of controllable of nano square array.
Described low refractive index dielectric the second thin film, low refractive index dielectric the second thin film are used for protecting high-index semiconductor
Nano square array, reduces surface reflection simultaneously.
A kind of solar thermal photovoltaic system using described high-performance optical spectral selectivity to inhale ripple element.
The beneficial effect comprise that
(1) present invention is only by designing the structure of metal surface dielectric film, realizes device to sunlight absorbing light
The flexible modulation of spectral limit, and then obtain good spectral selection.Avoid the micro-nano technology to metallic substrates, therefore, system
Preparation Method is simple.High-index semiconductor nano square in device architecture can be prepared by electron beam lithography, it is possible to profit
The processing of large area, low cost is realized with nanometer embossing.
(2) the structure design of the present invention is very flexible, by selecting different metal, quasiconductor, dielectric material, and (or)
Change structural parameters, just can realize cutoff wavelength regulation and control flexibly and spectral selection.
(3) the structure design of the present invention is applicable to resistant to elevated temperatures metal, quasiconductor, dielectric material.If material selects proper,
The present invention will have good high-temperature stability, can be used widely in solar thermal photovoltaic system.
Accompanying drawing explanation
Fig. 1 is the three dimensional structure schematic diagram (Unit 2 × 2) that high-performance optical spectral selectivity inhales ripple element；
Fig. 2 is the structural representation (top view that high performance selective inhales ripple element；Unit 2 × 2)；
Fig. 3 is the sectional view (Unit 2 × 2) that high performance selective inhales ripple unit, and this cross section intercepts along the dotted line of Fig. 2；
Fig. 4 is that the selectivity that numerical simulation obtains inhales ripple element absorption spectra under the conditions of plane wave vertical incidence (in fact
Line), and the energy intensity (dotted line) of solar spectrum, λc=1.2 μm are cutoff wavelength；
Fig. 5 is the reflectance spectrum that selectivity inhales ripple element: Numerical Simulation Results (dotted line)；Experimental measurements (solid line)；
In figure, metallic substrates 1, low refractive index dielectric the first film 2, high-index semiconductor nano square array 3, low folding
Penetrate rate medium the second thin film 4, low refractive index dielectric the 3rd thin film 5.
Detailed description of the invention
The invention will be further described with embodiment below in conjunction with the accompanying drawings.
As shown in Figure 1, 2, 3, a kind of high-performance optical spectral selectivity inhales ripple element, including metallic substrates 1, low refractive index dielectric
The first film 2, high-index semiconductor nano square array 3, low refractive index dielectric the second thin film 4, low refractive index dielectric the 3rd
Thin film 5；Low refractive index dielectric the first film 2 uniform fold, in metallic substrates 1, low refractive index dielectric the first film 2 builds
The high-index semiconductor nano square array 3 of checkerboard periodic arrangement, for selective absorbing incidence sunlight, reflects at height
Low refractive index dielectric the is filled in the depressed area exposing low refractive index dielectric the first film 2 between rate semiconductor nano square array 3
Two thin film 4, high-index semiconductor nano square array 3 top and fill area all cover low refractive index dielectric the 3rd thin film 5, with
Just protect high-index semiconductor nano square array 3 and reduce surface reflection.
Embodiment 1
Arranging metallic substrates 1 is resistant to elevated temperatures tantalum, and its thickness is sufficiently thick, and light not can pass through；Low refractive index dielectric first
Thin film 2 is silicon dioxide, thickness 100 nm；High-index semiconductor nano square array 3 is high-selenium corn material germanium, germanium square
Being highly 180 nm, the length of side is 270 nm；Low refractive index dielectric the second thin film 4, low refractive index dielectric the 3rd thin film 5 are still set to two
Silicon oxide, thickness 270 nm, it is filled in the gap of high-index semiconductor nano wire square array 3 and covers its top.This reality
Execute the material that example relates to and be high-temperature material, the high temperature of about 1000 K can be born.Numerical Simulation Results shows, the choosing of the present invention
Selecting property is inhaled ripple element wave band within cutoff wavelength 1.2 μm and is had the average absorption efficiency of up to 95%, just covers the sun
The main peak of spectrum；And the long-wave band beyond 1.2 μm, its absorption efficiency is quickly reduced to about 0.1, has good spectrum
Selectivity, as shown in Figure 4.Definition quality factor FoM is FoM=ηt • ηc, wherein, ηtRepresent the good of its spectral selection
Bad, ηcRepresent cutoff wavelength λcWithin the height of absorbance, both expression formulas are as follows:
Wherein α (λ) represents that selectivity inhales the absorption spectrum of ripple element, IAM1.5(λ) AM1.5 solar spectrum is represented.For this
The structure design of embodiment, its FoM is up to 0.91, far above the FoM of photon crystal structure.
The selectivity of the present invention is inhaled ripple element and following steps can be used to prepare: sputter about 200 nm in any planar substrates
Thick metal tantalum, as the metallic substrates of the selectivity suction ripple element of the present invention, its thickness be enough to prevent light transmission；In metal tantalum
In substrate, sputter the silicon dioxide thick for the 100 nm germanium as low refractive index dielectric the first film and 180 nm thickness successively for making
Standby high-index semiconductor nano square array；Negative photoresist MAN2403 thick for spin coating 270 nm on germanium film, and electricity consumption
Son bundle exposure technique (or nanometer embossing is to realize large area, low cost nanometer processing) prepares checkerboard on a photoresist
The square array pattern of periodic arrangement, the length of side of square unit is 270 nm；Using photoetching offset plate figure as mask, utilize sensing
Coupled plasma etch method carries out dry etching to germanium, and removes MAN2403, thus prepares the germanium of checkerboard periodic arrangement
Square array；The silica membrane sputtering 270 nm on this basis fills the space between germanium square, and covers at Qi Ding
Portion.Fig. 5 show reflectance spectrum (solid line) that this sample experiments records and the reflectance spectrum (dotted line) that numerical simulation obtains.Can from Ben Tu
Seeing, the experimental result of this sample is the best with Numerical Simulation Results.
Embodiment 2
Arranging metallic substrates 1 is resistant to elevated temperatures tungsten, and its thickness is sufficiently thick, and light not can pass through；Low refractive index dielectric first
Thin film 2 is silicon dioxide；High-index semiconductor nano square array 3 is high-selenium corn material silicon, and its height and the length of side are Asia
Micron dimension；Low refractive index dielectric the second thin film 4, low refractive index dielectric the 3rd thin film 5 are set to silicon dioxide, are filled in high refraction
The gap of rate semiconductor nanowires square array 3 also covers its top.The material that the present embodiment relates to is high-temperature material, can hold
High temperature by about 1000 K.
Embodiment 3
Arranging metallic substrates 1 is resistant to elevated temperatures tantalum, and its thickness is sufficiently thick, and light not can pass through；Low refractive index dielectric first
Thin film 2 is silicon dioxide；High-index semiconductor nano square array 3 is high-selenium corn material silicon, and its height and the length of side are Asia
Micron dimension；Low refractive index dielectric the second thin film 4, low refractive index dielectric the 3rd thin film 5 are set to low-refraction aluminium oxide, are filled in
The gap of high-index semiconductor nano wire square array 3 also covers its top.The material that the present embodiment relates to is high temperature material
Material, can bear the high temperature of about 1000 K.
Embodiment 4
Arranging metallic substrates 1 is resistant to elevated temperatures tungsten, and its thickness is sufficiently thick, and light not can pass through；Low refractive index dielectric first
Thin film 2 is silicon dioxide；High-index semiconductor nano square array 3 is high-selenium corn material silicon, and its height and the length of side are Asia
Micron dimension；Low refractive index dielectric the second thin film 4, low refractive index dielectric the 3rd thin film 5 are set to low-refraction aluminium oxide, are filled in
The gap of high-index semiconductor nano wire square array 3 also covers its top.The material that the present embodiment relates to is high temperature material
Material, can bear the high temperature of about 1000 K.
By selecting different materials and arranging different structure size, the selectivity of the present invention inhales the absorption spectra of ripple element can quilt
It is adjusted in different cutoff wavelengths, namely its spectral selection can flexible modulation.Therefore, those skilled in the art can be at this
Make on the basis of invention and revise targetedly and improve.
Claims (7)
1. a high-performance optical spectral selectivity inhales ripple element, it is characterised in that include metallic substrates (1), low refractive index dielectric the
One thin film (2), high-index semiconductor nano square array (3), low refractive index dielectric the second thin film (4), low refractive index dielectric
3rd thin film (5)；Low refractive index dielectric the first film (2) uniform fold is in metallic substrates (1), and low refractive index dielectric first is thin
Upper high-index semiconductor nano square array (3) building checkerboard periodic arrangement of film (2), in high-index semiconductor nanometer
Low refractive index dielectric the second thin film is filled in the depressed area exposing low refractive index dielectric the first film (2) between square array (3)
(4), high-index semiconductor nano square array (3) top and fill area all cover low refractive index dielectric the 3rd thin film (5)；
Described high-index semiconductor uses germanium, silicon.
High-performance optical spectral selectivity the most according to claim 1 inhales ripple element, it is characterised in that described low-refraction is situated between
Matter the first film (2), low refractive index dielectric the second thin film (4), the refractive index of low refractive index dielectric the 3rd thin film (5) are below height
The refractive index of refractive index semiconductor nano square array (3).
High-performance optical spectral selectivity the most according to claim 1 inhales ripple element, it is characterised in that described low-refraction is situated between
Matter the first film (2), low refractive index dielectric the second thin film (4), low refractive index dielectric the 3rd thin film (5) are different materials or of the same race
Material.
4. a kind of high-performance optical spectral selectivity as claimed in claim 1 inhales ripple element, it is characterised in that described Metal Substrate
The end, thickness is more than incident illumination attenuation length wherein, both incident to the long-wave band beyond cutoff wavelength as metallic mirror
Light is modulated, and the conductor as heat transfers heat to the selective radiation element being attached thereto again.
5. a kind of high-performance optical spectral selectivity as claimed in claim 1 inhales ripple element, it is characterised in that described high index of refraction
Semiconductor nano square array (3) is implemented on low refractive index dielectric the first film (2), for the selective absorbing incidence sun
Light, changes size and material, the spectral selection of this structure of controllable of nano square array.
6. a kind of high-performance optical spectral selectivity as claimed in claim 1 inhales ripple element, it is characterised in that described low-refraction
Medium the second thin film (4), low refractive index dielectric the 3rd thin film (5) are used for protecting high-index semiconductor nano square array, with
Time reduce surface reflection.
7. one kind uses the solar thermal photovoltaic system that high-performance optical spectral selectivity according to claim 1 inhales ripple element.
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| CN106653914B (en) * | 2016-12-22 | 2018-11-13 | 浙江大学 | A kind of ultra-thin sun light heater and preparation method |
| CN113381201B (en) * | 2021-05-21 | 2022-07-15 | 宁波大学 | Broadband wave-absorbing structure with frequency selectivity transmission function |
| CN115473051B (en) * | 2022-10-20 | 2023-07-18 | 中南大学 | Electromagnetic wave absorbing structure |
| CN116171034B (en) * | 2023-04-25 | 2023-07-07 | 中国人民解放军国防科技大学 | Micro-nano hybrid integrated energy selection surface of Ku frequency band |
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| CN100489597C (en) * | 2006-09-11 | 2009-05-20 | 中山大学 | One-dimensional metal photon dielectric crystal and its design method and application |
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