CN116171034B - Micro-nano hybrid integrated energy selection surface of Ku frequency band - Google Patents
Micro-nano hybrid integrated energy selection surface of Ku frequency band Download PDFInfo
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- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention relates to a micro-nano hybrid integrated energy selection surface of a Ku frequency band, which comprises the following components: a first electromagnetic response array, an intermediate connection structure connected to the first electromagnetic response array, and a second electromagnetic response array connected to the intermediate connection structure; the first electromagnetic response array includes: at least one first electromagnetic response unit; the first electromagnetic response unit includes: the semiconductor device comprises a first semiconductor medium layer, a first cross metal structure and a first diode; the first metal arm of the first cross metal structure is provided with a first gap, and the opposite ends of the first gap are used for being respectively connected with the two electrodes of the first diode; the second electromagnetic response array includes: at least one second electromagnetic response unit; the second electromagnetic response unit includes: the second semiconductor medium layer, the second cross metal structure and the second diode; the second metal arm of the second cross-shaped metal structure is provided with a second gap, and two opposite ends of the second gap are used for being respectively connected with two electrodes of the second diode.
Description
Technical Field
The invention relates to the field of strong electromagnetic pulse protection, in particular to a micro-nano hybrid integrated energy selection surface of a Ku frequency band.
Background
The intellectualization of modern electronic information systems has been greatly developed, the integration degree is higher and higher, the equipment size is smaller and the density of electronic devices is higher and higher. As the degree of electronization of the device system is higher, the device system is more sensitive to changes in surrounding electromagnetic fields, voltages and currents. Experimental research shows that electromagnetic pulses can be coupled into an electronic system to influence the normal operation of equipment to different degrees, and when the coupling energy exceeds a certain threshold value, sensitive devices are damaged, so that the whole system is invalid or permanently damaged. The intentional and unintentional radiation of high-frequency band and high-power level microwaves can damage the electronic devices of the equipment in a long-distance non-contact way, thereby disabling the whole equipment system. How to effectively protect the safe and reliable operation of an electronic information system in a complex electromagnetic environment becomes one of the problems to be solved urgently.
The development of high-frequency band and ultra-wideband frequency equipment provides new challenges and requirements for electromagnetic protection technology. Because the high-frequency band and ultra-wideband technology has the characteristics of high precision and high information throughput rate in the fields of wireless communication, detection and the like, the technology of applying the high-frequency ultra-wideband is more and more popular in recent years at home and abroad, and is mainly applied to communication (such as home and personal networks, highway information service systems, wireless audio, data, video distribution and the like), radar detection (such as collision/fault avoidance of vehicles and aircrafts, intrusion detection, ground penetrating radar and the like) and high-precision positioning (such as asset tracking, personnel positioning, indoor positioning and the like). In addition, the fifth generation mobile communication system 5G has become a hot spot for the discussion of the communication industry and academia, wherein the coverage of the 5G communication frequency band has been covered to the microwave frequency band and the ultra wideband frequency band. The usual satellite communications have also been covered in the X, ku band. Therefore, the electromagnetic protection requirements of high frequency bands and ultra-wideband in wireless communication, detection and other systems are also becoming stronger.
Currently, protection means against strong electromagnetic threats are mostly mainly "back door" protection means such as filtering, shielding, grounding and the like (for example, reference [1] and reference [2 ]), and these methods are simple and convenient from the standpoint of circuit design, but increase the complexity and design difficulty of the system. The front door protection is mainly realized by adding a high-power amplitude limiter in a radio frequency front-end circuit, and the high-power attenuator can greatly attenuate current flowing into the circuit, but can influence the passing of normal signals while meeting the requirement of greatly attenuating signals. In addition, a filter or a Frequency Selective Surface (FSS) is additionally arranged at the front end, so that out-of-band high-power signals can be isolated, but the working state of the front end cannot be adaptively changed according to the change of electromagnetic environment, and strong electromagnetic pulses with frequencies within a passband cannot be effectively protected.
The energy selecting surface is an electromagnetic energy selecting surface with electromagnetic energy low-pass characteristic, can transmit electromagnetic signals with low energy and shield electromagnetic pulses with high energy, and has important significance in electromagnetic pulse protection of civil communication, navigation, detection and other electronic information platforms. The energy selective surface is mainly composed of an array of conductive metal structural units and a nonlinear material or device with voltage and current sensitivity. In reference [3], although the concept of an energy selection surface is proposed, that is, the energy selection surface can adaptively change the working state of the energy selection surface according to the space field intensity, and the energy selection surface can adaptively protect in-band strong electromagnetic pulses, the working frequency of the energy selection surface is L-band or below, and the protection requirement of a high-frequency electronic system cannot be met. Reference [4] and reference [5] achieve protection of the S-band and the X-band, respectively, but the bandwidths and frequency bands still cannot meet the protection requirements of the existing equipment on high frequency and ultra-wideband.
The performance of the traditional energy selection surface is limited by a design method and a processing technology, the mode of processing by using the traditional PCB technology and the commercial packaging diode welding technology is influenced by factors such as parasitic parameters, process precision, electromagnetic structure design and the like of the commercial packaging diode, and the high-frequency and broadband protection performance of the energy selection surface is not ideal. In addition, parasitic parameters such as parasitic capacitance, inductance and the like are inevitably additionally introduced in the packaging and welding processes of the diode. In addition, commercial diode performance and selectable range also greatly limit the shielding performance of the energy selective surface. At present, the traditional energy selection surface design processing method can only meet the electromagnetic protection requirements of low-frequency and narrow-band frequency electronic information systems. Therefore, in order to realize a high-frequency band and large-bandwidth energy selection surface, the processing precision of the metal structure unit array must be improved, the electrical performance of the diode is improved, and the problems of parasitic capacitance, inductance and the like caused by diode packaging and welding are required to be solved.
Reference is made to:
[1] yan Kewen, ruan Chengli, liang Yuan, et al, communications device antenna port electromagnetic pulse protection technology research [ J ]. Ship electronics engineering, 2012, vol.32 (8): 61-63;
[2] Zhang Zhong, radio frequency front electromagnetic protection technology research of ultrashort wave communication system [ D ]. Chengdu: university of electronic technology, 2009:18-19;
[3] chinese patent grant publication number CN101754668B is an electromagnetic energy selective surface device, grant publication date: 2011-11-09;
[4] chinese patent grant publication number CN109451718B, an ultra wideband energy selective surface, grant publication day: 2020-06-19;
[5] chinese patent grant publication number CN115566437B, an X-band broadband energy selective surface, grant publication day: 2023-03-07.
Disclosure of Invention
The invention aims to provide a micro-nano hybrid integrated energy selection surface of a Ku frequency band.
In order to achieve the above object, the present invention provides a micro-nano hybrid integrated energy selection surface of Ku band, comprising: a first electromagnetic response array, an intermediate connection structure connected to the first electromagnetic response array, and a second electromagnetic response array connected to the intermediate connection structure;
the first electromagnetic response array includes: at least one first electromagnetic response unit;
the first electromagnetic response unit includes: the first semiconductor medium layer, the first cross metal structure that is set up on a side of said first semiconductor medium layer, the first diode integrated on said first semiconductor medium layer;
The first metal arm of the first cross metal structure is provided with a first gap, and two opposite ends of the first gap are used for being respectively connected with two electrodes of the first diode;
the second electromagnetic response array includes: at least one second electromagnetic response unit;
the second electromagnetic response unit includes: the second semiconductor medium layer, the second diode integrated on the second semiconductor medium layer of the second metal structure of the second cross that is set up in a side of said second semiconductor medium layer;
the second metal arm of the second cross-shaped metal structure is provided with a second gap, and two opposite ends of the second gap are used for being respectively connected with two electrodes of the second diode.
According to one aspect of the invention, the first electromagnetic response array and the second electromagnetic response array are connected on opposite sides of the intermediate connection structure, respectively; the first cross metal structure is arranged on one side, far away from the middle connecting structure, of the first semiconductor dielectric layer, and the second cross metal structure is arranged on one side, far away from the middle connecting structure, of the second semiconductor dielectric layer.
According to one aspect of the invention, the four first metal arms of the first cross metal structure are respectively provided with the first gaps, and the first diodes are arranged in one-to-one correspondence with the first gaps;
The four second metal arms of the second metal structure are respectively provided with the second gaps, and the second diodes are arranged in one-to-one correspondence with the second gaps.
According to one aspect of the invention, the length of the first cross-shaped metal structure in the X-axis direction
The method meets the following conditions:
length in Y-axis direction +.>
The method meets the following conditions: />
；
Width of the first metal armaThe method meets the following conditions: 0.05mm less than or equal toa≤0.2mm;
Length of the second cross-shaped metal structure in X-axis direction
The method meets the following conditions: />
Length in Y-axis direction +.>
The method meets the following conditions: />
；
Width of the second metal armbThe method meets the following conditions: 0.05mm less than or equal tob≤0.2mm。
According to one aspect of the present invention, the thicknesses of the first semiconductor dielectric layer and the second semiconductor dielectric layer are uniform, and satisfy: 0.5mm less than or equal toh 1 ≤0.1mm。
According to one aspect of the invention, the first electromagnetic response array has L first electromagnetic response units, and the first electromagnetic response units are arranged in a p×q array; wherein, p×q=l, P, Q is a positive integer and satisfies p×q being not less than 2;
the second electromagnetic response array is provided with N second electromagnetic response units, and the second electromagnetic response units are distributed in a W multiplied by V array; wherein w×v=n, W, V is a positive integer and satisfies w×v be 2 or more.
According to one aspect of the invention, the first cross metal structure is made of gold;
the second metal structure is made of gold.
According to one aspect of the present invention, the first semiconductor dielectric layer includes: the first sapphire substrate, the first GaN buffer layer, the first GaN channel layer, the first AlN layer, the first AlGaN barrier layer and the first SiN passivation layer are sequentially arranged;
the first cross metal structure is arranged on the first SiN passivation layer;
the first diode is a lateral AlGaN/GaN schottky barrier diode comprising: a first metal anode, a first metal cathode, and two first metal layers respectively connected with the first metal anode and the first metal cathode;
the first metal anode and the first metal cathode are embedded on the first SiN passivation layer and are respectively connected with the first AlGaN barrier layer; the first metal anode is in schottky contact with the first AlGaN barrier layer, and the first metal cathode is in ohmic contact with the first AlGaN barrier layer;
the first metal layer and the first metal arm are integrally arranged;
the second semiconductor dielectric layer includes: the second sapphire substrate, the second GaN buffer layer, the second GaN channel layer, the second AlN layer, the second AlGaN barrier layer and the second SiN passivation layer are sequentially arranged;
The second SiN passivation layer is arranged on the first SiN passivation layer;
the second diode is a lateral AlGaN/GaN schottky barrier diode comprising: a second metal anode, a second metal cathode, and two second metal layers respectively connected to the second metal anode and the second metal cathode;
the second metal anode and the second metal cathode are embedded on the second SiN passivation layer and are respectively connected with the second AlGaN barrier layer; the second metal anode is in schottky contact with the second AlGaN barrier layer, and the second metal cathode is in ohmic contact with the second AlGaN barrier layer;
the second metal layer is integrally arranged with the second metal arm.
According to one aspect of the invention, the intermediate connection structure comprises: at least one intermediate square ring unit;
the intermediate square ring unit includes: the dielectric layer is arranged on the first metal square ring;
the first metal square ring and the second metal square ring are respectively arranged on two opposite sides of the dielectric layer, and the shape and the size of the first metal square ring and the second metal square ring are consistent;
the widths of the first metal square ring and the second metal square ring in the X direction are 
The method meets the following conditions:
width in Y-direction +.>
The method meets the following conditions: />
Line width ofwThe method meets the following conditions: 0.1mm less than or equal tow≤0.4mm；
Thickness of the dielectric layer
The method meets the following conditions: />
。
According to one aspect of the invention, the intermediate connection structure is provided with M intermediate square ring units, and the intermediate square ring units are arranged in an R multiplied by S array; wherein r×s=m, R, S is a positive integer;
the first electromagnetic response array, the intermediate connection structure, and the second electromagnetic response array satisfy:
，/>
。
according to the scheme of the invention, the diode and the metal structure are integrally processed by utilizing the semiconductor process, so that the packaging and welding of the diode are avoided, the micro-nano metal structure processing can be realized, and meanwhile, the parasitic capacitance and inductance of the diode caused by packaging and welding can be greatly reduced.
According to the scheme of the invention, compared with the existing scheme, the self-adaptive protection function in ultra-wide frequency band and higher frequency band can be realized, and the self-adaptive protection device has the characteristics of low insertion loss and high protection efficiency from the aspects of working bandwidth and working frequency.
According to the scheme, the energy selection surface is innovatively expanded, the self-adaptive protection of ultra-wideband and high-frequency bands based on the energy selection principle is realized, a reliable electromagnetic protection function can be provided for high-frequency band and ultra-wideband frequency equipment, and the energy selection surface has important theoretical and engineering values.
According to the scheme provided by the invention, the requirements of low insertion loss and high protection efficiency in the Ku frequency band are fully met.
According to the scheme of the invention, the invention can adaptively sense the electromagnetic field intensity in the space and change the working state of the device: when the electromagnetic field energy in the space is smaller than the switch threshold value, the device provides a passband in the working frequency band, and the signal is received by the system through the passband; when the energy is greater than the switching threshold, the passband is closed and the signal is reflected in the full frequency band. The invention mainly utilizes the equivalent capacitance and resistance of the diode before and after conduction under electromagnetic radiation to form different resonant circuits with the electromagnetic structure, thereby realizing the aims of low insertion loss and high protection efficiency of the energy selection surface in the Ku frequency band ultra-wideband.
According to the scheme of the invention, the effect of Ku frequency band electromagnetic energy selection can be realized, namely, the self working state can be adaptively changed according to the space field intensity, the low-loss passing of a Ku frequency band low-power signal is allowed, and the entering of Ku frequency band strong electromagnetic energy is prevented.
According to the scheme of the invention, the insertion loss of the energy selection surface to small signals in ultra-wide frequency band and high frequency band can be reduced, and the protection efficiency is improved.
Drawings
FIG. 1 is a block diagram of a micro-nano hybrid integrated energy selection surface according to one embodiment of the invention;
FIG. 2 is a block diagram of a first electromagnetic response array according to one embodiment of the invention;
FIG. 3 is a block diagram of a first electromagnetic response unit according to one embodiment of the invention;
FIG. 4 is a block diagram of a second electromagnetic response array according to one embodiment of the invention;
FIG. 5 is a block diagram of a second electromagnetic response unit according to one embodiment of the invention;
fig. 6 is a block diagram of a first semiconductor dielectric layer according to an embodiment of the present invention;
fig. 7 is a block diagram of a second semiconductor dielectric layer according to an embodiment of the present invention;
FIG. 8 is a block diagram of a first metal square ring or a second metal square ring according to one embodiment of the invention;
FIG. 9 is a graph of low power signal insertion loss test results according to one embodiment of the invention;
FIG. 10 is a graph of high power signal protection performance test results according to one embodiment of the present invention.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments will be briefly described below. It is apparent that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
In describing embodiments of the present invention, the terms "longitudinal," "transverse," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer" and the like are used in terms of orientation or positional relationship based on that shown in the drawings, which are merely for convenience of description and to simplify the description, rather than to indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and thus the above terms should not be construed as limiting the present invention.
As shown in fig. 1, fig. 2, fig. 3, fig. 4, and fig. 5, according to an embodiment of the present invention, a micro-nano hybrid integrated energy selection surface of Ku band of the present invention includes: a first electromagnetically responsive array 1, an intermediate connection structure 2 connected to the first electromagnetically responsive array 1, and a second electromagnetically responsive array 3 connected to the intermediate connection structure 2. In this embodiment, the primary function of the first electromagnetic response array 1 is to induce electromagnetic waves and provide electromagnetic protection, and the function of the second electromagnetic response array 3 is the same as that of the first electromagnetic response array 1, and the second electromagnetic response array 3 can respond after the first electromagnetic response array 1, so that leaked electromagnetic waves are further isolated to play a secondary electromagnetic shielding role. In the present embodiment, the first electromagnetic response array 1 includes: at least one first electromagnetic response unit 11; wherein the first electromagnetic response unit 11 includes: the first semiconductor dielectric layer 111, a first cross metal structure 112 disposed on one side of the first semiconductor dielectric layer 111, and a first diode 113 integrated on the first semiconductor dielectric layer 111. In the present embodiment, the first metal arm 112a of the first cross metal structure 112 is provided with a first slit, and opposite ends of the first slit are used for respectively connecting with two electrodes of the first diode 113; thereby enabling communication of the first cross metal structure 112 with the first diode 113. In this embodiment, the first diode 113 is connected to the first cross metal structure 112 for convenience. When the first diode 113 is integrated on the first semiconductor dielectric layer 111, the first diode 113 is located below the first cross metal structure 112 corresponding to the first gap, so that the integrated processing of the first semiconductor dielectric layer 111, the first diode 113 and the first cross metal structure 112 is conveniently realized, and the need of welding a common diode is effectively reduced.
In the present embodiment, the second electromagnetic response array 3 includes: at least one second electromagnetic response unit 31; wherein the second electromagnetic response unit 31 includes: the second semiconductor dielectric layer 311, a second diode 313 integrated on the second semiconductor dielectric layer 311, and a second metal structure 312 disposed on one side of the second semiconductor dielectric layer 311. In the present embodiment, the second metal arm 312a of the second herringbone metal structure 312 is provided with a second slit, and opposite ends of the second slit are used for being respectively connected with two electrodes of the second diode 313; thereby enabling connection of the second diode 313 to the second herringbone metal structure 312. When the second diode 313 is integrated on the second semiconductor dielectric layer 311, the second diode 313 is located below the second metal structure 312 corresponding to the second gap, so that the integrated processing of the second semiconductor dielectric layer 311, the second diode 313 and the second metal structure 312 is conveniently realized, and the need for welding a common diode is effectively reduced.
As shown in fig. 1, according to one embodiment of the present invention, a first electromagnetically responsive array 1 and a second electromagnetically responsive array 3 are connected at opposite sides of an intermediate connection structure 2, respectively; the first cross metal structure 112 is disposed on a side of the first semiconductor dielectric layer 111 away from the intermediate connection structure 2, and the second cross metal structure 312 is disposed on a side of the second semiconductor dielectric layer 311 away from the intermediate connection structure 2. With the above arrangement, the first cross metal structure 112 and the second cross metal structure 312 are on both outer sides of the energy selecting surface.
As shown in fig. 1, 2 and 3, according to an embodiment of the present invention, four first metal arms 112a of the first cross metal structure 112 are respectively provided with first slits, and the first diodes 113 are disposed in one-to-one correspondence with the first slits. In the present embodiment, four first metal arms 112a are connected to each other perpendicularly to form a cross structure, wherein the distance of each first slit from the center of the cross structure is the same. In the present embodiment, the width of the first slit is matched with the size of the first diode 113.
In the present embodiment, the four second metal arms 312a of the second herringbone metal structure 312 are respectively provided with second slits, and the second diodes 313 are disposed in one-to-one correspondence with the second slits. In the present embodiment, four second metal arms 312a are connected to each other perpendicularly to form a cross structure, wherein each second slit is equally spaced from the center of the cross structure. The width of the second gap is matched to the size of the second diode 313 in this embodiment.
According to one embodiment of the present invention, the positive and negative directions in which the first diode 113 is connected to the first cross metal structure 112 are identical along the same direction of the first electromagnetic response array 1. For example, the connection direction of the anode and cathode of the first diode 113 on the first metal arm 112a parallel to the X direction and the first metal arm 112a may be uniformly set from left to right or from right to left. Accordingly, the connection direction of the anode and cathode of the first diode 113 on the first metal arm 112a parallel to the Y direction and the first metal arm 112a may be uniformly set from front to back or from back to front.
According to one embodiment of the present invention, the second diode 313 is connected to the second wye metal structure 312 in the same direction as the second electromagnetically responsive array 3. For example, the connection direction of the anode and cathode of the second diode 313 on the second metal arm 312a parallel to the X direction and the second metal arm 312a may be uniformly set from left to right or from right to left. Accordingly, the connection direction of the anode and cathode of the second diode 313 on the second metal arm 312a parallel to the Y direction and the second metal arm 312a may be uniformly set from front to back or from back to front.
As shown in conjunction with fig. 1, 2 and 3, according to one embodiment of the present invention, the length of the first cross-shaped metal structure 112 in the X-axis direction
The method meets the following conditions: />
Length in Y-axis direction +.>
The method meets the following conditions:
. In the present embodiment, the width of the first metal arm 112aaThe method meets the following conditions: 0.05mm less than or equal toaLess than or equal to 0.2mm. In this embodiment, the first semiconductor dielectric layer 111 has a square structure, and its side length is adapted to the length of the first cross metal structure 112.
In the present embodiment, the dimension of the second cross metal structure 312 is different from the dimension of the first cross metal structure 112, wherein the length of the second cross metal structure 312 in the X-axis direction 
The method meets the following conditions: />
Length in Y-axis direction +.>
The method meets the following conditions: />
. In the present embodiment, the width of the second metal arm 312abThe method meets the following conditions: 0.05mm less than or equal tobLess than or equal to 0.2mm. It should be noted that the width of the second metal arm 312abWidth of the first metal arm 112aaThe values of (2) may be uniform or different.
As shown in fig. 1, according to an embodiment of the present invention, the first semiconductor dielectric layer 111 plays a supporting role and is also a substrate processed by the first cross metal structure 112. The second semiconductor dielectric layer 311 serves as a support and is also a substrate for processing the second metal structure 312. In this embodiment, the thicknesses of the first semiconductor dielectric layer 111 and the second semiconductor dielectric layer 311 are uniform, and satisfy: 0.5mm less than or equal toh 1 ≤0.1mm。
As shown in connection with fig. 1, 2, 3, 4 and 5, according to one embodiment of the present invention, the first electromagnetic response array 1 has L first electromagnetic response units 11, and the first electromagnetic response units 11 are arranged in a p×q array; wherein, p×q=l, P, Q is a positive integer and satisfies p×q being not less than 2. In the present embodiment, the plurality of first electromagnetic response units 11 are connected to each other, wherein the first cross metal structures 112 are conducted to each other. And, the first semiconductor medium layers 111 of the plurality of first electromagnetic response units 11 may be integrally formed, so that integral processing is conveniently realized.
In the present embodiment, the second electromagnetic response array 3 has N second electromagnetic response units 31, and the second electromagnetic response units 31 are arranged in a w×v array; wherein w×v=n, W, V is a positive integer and satisfies w×v be 2 or more. In the present embodiment, the plurality of second electromagnetic response units 31 are connected to each other, wherein the second metal structure 312 is conductive to each other. And, the second semiconductor dielectric layers 311 of the plurality of second electromagnetic response units 31 may be integrally formed, so that the integrated processing is conveniently realized.
According to one embodiment of the present invention, the first cross metal structure 112 is made of gold. Through the arrangement, the conductivity of the first cross metal structure 112 is effectively improved, and the shielding effectiveness of the scheme is further improved.
According to one embodiment of the present invention, the second metal structure 312 is made of gold. Through the arrangement, the conductivity of the second delta-shaped metal structure 312 is effectively improved, and the shielding effectiveness of the scheme is further improved.
As shown in fig. 1, 2, 3, 4, 5, 6 and 7, according to an embodiment of the present invention, the first semiconductor dielectric layer 111 is formed by GaN epitaxy on a sapphire material. Wherein the first semiconductor dielectric layer 111 includes: the first sapphire substrate 111a, the first GaN buffer layer 111b, the first GaN channel layer 111c, the first AlN layer 111d, the first AlGaN barrier layer 111e, and the first SiN passivation layer 111f are sequentially provided. In the present embodiment, the thickness of each layer may be adaptively set according to actual technical specifications, but the total thickness needs to satisfy the foregoing thickness range. In the present embodiment, the first cross metal structure 112 is disposed on the first SiN passivation layer 111f.
In the present embodiment, the first diode 113 is a lateral AlGaN/GaN schottky barrier diode, which includes: a first metal anode 113a, a first metal cathode 113b, and two first metal layers 113c respectively connecting the first metal anode 113a and the first metal cathode 113 b; wherein, the first metal anode 113a and the first metal cathode 113b are embedded on the first SiN passivation layer 111f and are respectively connected with the first AlGaN barrier layer 111 e; the first metal anode 113a is schottky-contacted with the first AlGaN barrier layer 111e, and the first metal cathode 113b is ohmic-contacted with the first AlGaN barrier layer 111e, thereby forming a diode structure.
In the present embodiment, the length of the first diode 113
The method meets the following conditions: less than or equal to 0.025mmg d ≤0.035mm。
In this embodiment, the cross-sectional shapes of the first metal anode 113a and the first metal cathode 113b are stepped, wherein the end face of the end with the larger area is disposed flush with the surface of the first SiN passivation layer 111f, so as to facilitate connection with the first metal layer 113c, and the end with the smaller area is connected with the first AlGaN barrier layer 111e of the lower layer. Wherein, since the end surfaces of the first metal anode 113a and the first metal cathode 113b are flush with the surface of the first SiN passivation layer 111f, the connection with the first metal anode 113a and the first metal cathode 113b can be achieved by laying the first metal layer 113c on the surface of the first SiN passivation layer 111 f. In the present embodiment, the first metal layer 113c is provided integrally with the first metal arm 112 a; through the arrangement, the integrated processing of the first cross metal structure 112 and the first diode 113 leading-out structure can be effectively realized, the connecting procedures such as welding and the like can be effectively eliminated, and the preparation flow of the invention is greatly simplified.
In the present embodiment, the structure of the second semiconductor dielectric layer 311 is identical to the structure of the first semiconductor dielectric layer 111, and is also formed by GaN epitaxy on a sapphire material. Wherein the second semiconductor dielectric layer 311 includes: a second sapphire substrate 311a, a second GaN buffer layer 311b, a second GaN channel layer 311c, a second AlN layer 311d, a second AlGaN barrier layer 311e, and a second SiN passivation layer 311f, which are sequentially disposed; in the present embodiment, the thickness of each layer may be adaptively set according to actual technical specifications, but the total thickness needs to satisfy the foregoing thickness range. In the present embodiment, the second jv metal structure 312 is disposed on the second SiN passivation layer 311 f.
In this embodiment, the second diode 313 is a lateral AlGaN/GaN schottky barrier diode, which includes: a second metal anode 313a, a second metal cathode 313b, and two second metal layers 313c respectively connected to the second metal anode 313a and the second metal cathode 313 b; wherein a second metal anode 313a and a second metal cathode 313b are embedded on the second SiN passivation layer 311f and are respectively connected with the second AlGaN barrier layer 311 e; the second metal anode 313a is in schottky contact with the second AlGaN barrier layer 311e, and the second metal cathode 313b is in ohmic contact with the second AlGaN barrier layer 311e, thereby forming a diode structure.
In the present embodiment, the length of the second diode 313
The method meets the following conditions: less than or equal to 0.025mmg d ≤0.035mm 。
In this embodiment, the cross-sectional shapes of the second metal anode 313a and the second metal cathode 313b are stepped, wherein the end face of the end with the larger area is disposed flush with the surface of the second SiN passivation layer 311f, so as to facilitate connection with the second metal layer 313c, and the end with the smaller area is connected with the second AlGaN barrier layer 311e of the lower layer. Since the end surfaces of the second metal anode 313a and the second metal cathode 313b are flush with the surface of the second SiN passivation layer 311f, the connection with the second metal anode 313a and the second metal cathode 313b can be achieved by laying the second metal layer 313c on the surface of the second SiN passivation layer 311 f. In the present embodiment, the second metal layer 313c is provided integrally with the second metal arm 312 a; through the arrangement, the integrated processing of the second delta-shaped metal structure 312 and the second diode 313 leading-out structure can be effectively realized, the connecting procedures such as welding and the like can be effectively eliminated, and the preparation flow of the invention is greatly simplified.
As shown in connection with fig. 1 and 8, according to one embodiment of the present invention, the intermediate connection structure 2 includes: at least one intermediate square ring unit 2a. In the present embodiment, the intermediate connection structure 2 is an electromagnetic coupling structure located in the middle, and its main function is to increase the coupling between the first electromagnetic response array 1 and the second electromagnetic response array 3, thereby expanding the operating bandwidth of the designed energy selection surface. In the present embodiment, the intermediate connection structure 2 is manufactured by a process of a printed circuit board. Specifically, the intermediate square ring unit 2a includes: a first metal square ring 21, a dielectric layer 22 and a second metal square ring 23. Wherein, the first metal square ring 21 and the second metal square ring 23 are respectively arranged at two opposite sides of the dielectric layer 22, and the shape and the size of the first metal square ring 21 and the second metal square ring 23 are consistent. In the present embodiment, the widths of the first metal square ring 21 and the second metal square ring 23 in the X direction are 
The method meets the following conditions: />
Width in Y-direction +.>
The method meets the following conditions: />
Line width ofwThe method meets the following conditions: />
. In this embodiment, the dielectric layer 22 is made of a high-frequency circuit board material, and may be one of the main materials of rogers 5880, rogers 4350B, thai microwave F4B, etc. In the present embodiment, the side length of the dielectric layer 22 is set in conformity with the side lengths of the first metal square ring 21 and the second metal square ring 23. In this embodiment, the thickness of the dielectric layer 22 is +.>
The method meets the following conditions: />
。
According to one embodiment of the present invention, the intermediate connection structure 2 has M intermediate square ring units 2a, and the intermediate square ring units 2a are arranged in an r×s array; wherein r×s=m, R, S is a positive integer. In the present embodiment, the first electromagnetic response array 1, the intermediate connection structure 2, and the second electromagnetic response array 3 satisfy:
，
。
through the arrangement, the invention can self-adaptively sense the electromagnetic field intensity in the space and change the working state of the device: when the electromagnetic field energy in the space is smaller than the switch threshold value, the diode on the device is in a closed state, and the device is similar to a band-pass filter for the incident electromagnetic wave, so that the electromagnetic wave in the passband can be transmitted with low loss; when the space electromagnetic wave energy is larger than the switch threshold value, the diode on the device is triggered by the electromagnetic wave to be conducted, at the moment, the device becomes similar to a band-stop filter for the incident electromagnetic wave, and the signal is reflected in the full frequency band, so that the transmission of high-power signals is prevented.
According to the invention, through the parameter range setting, the comprehensive optimal performance of the invention in the aspects of working frequency band, insertion loss, shielding effectiveness and the like is effectively ensured.
For further explanation of the present solution, the present invention is exemplified with reference to the accompanying drawings.
Example 1
In this embodiment, the micro-nano hybrid integrated energy selection surface of the present invention comprises: a first electromagnetically responsive array 1, an intermediate connection structure 2 and a second electromagnetically responsive array 3. The first electromagnetic response array 1 has L first electromagnetic response units 11, and is arranged in a p×q array (p×q=l, P, Q is a positive integer and satisfies p×q Σ.gtoreq.2). In the present embodiment, the length of the first cross metal structure 112 in the X-axis direction
Length in Y-axis direction +.>
Width +.of first metal arm 112a>
. In the present embodiment, first slits are respectively provided on four first metal arms 112a of the first cross metal structure 112, and corresponding first diodes 113 are provided corresponding to the first slits, wherein the lengths of the first diodes 113 are equal to>
. In the present embodiment, since the first electromagnetic response unit 11 is provided in plurality, the side length of the corresponding first semiconductor dielectric layer 111 is set to be consistent with the length and width of the first cross metal structure 112, so that an array arrangement with the length and width of the first cross metal structure 112 as a period can be realized. In the present embodiment, the first cross metal structure 112 passes through the first metal arm 112a Is interconnected at the ends of the pair.
In the present embodiment, the thickness of the first semiconductor dielectric layer 111
。
In this embodiment, the first cross metal structure 112 is made of gold.
In the present embodiment, the first diode 113 is a lateral AlGaN/GaN schottky barrier diode, and is fabricated by a GaN semiconductor process.
Further, the intermediate connection structure 2 has M intermediate square ring units 2a, and the intermediate square ring units 2a are arranged in an r×s array; wherein r×s=m, R, S is a positive integer. Each intermediate square ring unit 2a has a uniform structure, and further, in the intermediate square ring unit 2a, the widths of the first metal square ring 21 and the second metal square ring 23 in the X direction are
Width in Y-direction +.>
Line width ofw=0.2 mm. In the present embodiment, the side length of the dielectric layer 22 is set in conformity with the side lengths of the first metal square ring 21 and the second metal square ring 23. In the present embodiment, the dielectric layer 22 is formed of a Rogowski 5880 substrate, and has a thickness +.>
。
Further, the second electromagnetic response array 3 has N second electromagnetic response units 31, and the second electromagnetic response units 31 are arranged in a w×v array; wherein w×v=n, W, V is a positive integer and satisfies w×v be 2 or more. In the present embodiment, the length of the second metal structure 312 in the X-axis direction 
Length in Y-axis direction +.>
Width of the second metal arm 312aDegree ofb=0.14 mm. In the present embodiment, second slits are respectively provided on the four second metal arms 312a of the second delta-shaped metal structure 312, and a second diode 313 is provided corresponding to the second slits, wherein the length of the second diode 313 is equal to>
. In the present embodiment, since the plurality of second electromagnetic response units 31 are provided, the side length of the corresponding second semiconductor dielectric layer 311 is set to be consistent with the length and width of the second metal structure 312, so that an array arrangement with the length and width of the second metal structure 312 as a period can be realized. In this embodiment, the second metal structures 312 are interconnected by the ends of the second metal arms 312 a.
In the present embodiment, the thickness of the second semiconductor dielectric layer 311
。
In the present embodiment, the material used for the second metal structure 312 is gold.
In the present embodiment, the second diode 313 is a lateral AlGaN/GaN schottky barrier diode, and is fabricated by a GaN semiconductor process.
Further, with the first electromagnetic response array 1, the intermediate connection structure 2, and the second electromagnetic response array 3 set as described above, the overall size thereof is further restricted, and the number of the first electromagnetic response units 11, the intermediate square ring units 2a, and the second electromagnetic response units 31 included therein needs to be set so as to satisfy the following requirements: 
，
. Specifically, in the present embodiment, the first electromagnetic response unit 11 specifically includes: p×q=40×40=1600, and the intermediate square ring unit 2a specifically includes: r×s=20×20=400, and the second electromagnetic response unit 31 specifically includes: w×v=60×60=3600.
Based on the above setting, corresponding test samples are prepared, and experiments of low-power signals and high-power signals are carried out on the processed test samples by a space windowing test method, so that feasibility and practicability of the scheme are verified.
Specifically, fig. 9 is the insertion loss test result of the test sample in example 1, the abscissa in fig. 9 is the frequency, and the ordinate is the insertion loss, and it can be seen from fig. 9 that the insertion loss of the energy selecting surface designed by the present invention is less than 1dB in the range of 12GHz-18GHz (frequency width 6 GHz), and the requirement of broadband low insertion loss in Ku band is satisfied. Fig. 10 shows the test result of the protection effect obtained by the test, the abscissa shows the frequency, and the ordinate shows the protection effect, and it can be seen from fig. 10 that the protection effect is greater than 29 dB in the frequency below 18GHz and greater than 35dB below 14GHz, so as to meet the requirement of high protection effect of the broadband in Ku band.
The higher operating band of the present invention can cover the Ku band as compared to reference [5], reference [6], reference [7], whereas reference [6] and reference [7] can only operate below the C band, reference [5] operating below the Ku band. Therefore, the invention has wider working bandwidth, achieves 6GHz, smaller insertion loss and larger protection efficiency. See table 1 below for comparative parameters.
TABLE 1
Reference [6] n. Hu et al, "Design of Ultrawideband Energy-Selective Surface for High-Power Microwave Protection," in IEEE Antennas and Wireless Propagation Letters, vol.18, no. 4, pp. 669-673, april 2019, doi: 10.1109/lawp.2019.2900760 "(ultra wideband energy selective surface design for high power microwave protection, IEEE antenna and radio propagation flash).
Reference [7] D.Qin, R.Ma, J.Su, X.Chen, R.Yang and W.Zhang, "Ultra-Wideband Strong Field Protection Device Based on Metasurface," in IEEE Transactions on Electromagnetic Compatibility, vol.62, no. 6, pp. 2842-2848, dec.2020, doi: 10.1109/TEMC.2020.3020840 (Ultra-wideband high field protection device based on Ultra-surface, IEEE electromagnetic compatibility journal).
The foregoing is merely exemplary of embodiments of the invention and, as regards devices and arrangements not explicitly described in this disclosure, it should be understood that this can be done by general purpose devices and methods known in the art.
The above description is only one embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A micro-nano hybrid integrated energy selection surface for Ku frequency band, comprising: a first electromagnetic response array (1), an intermediate connection structure (2) connected to the first electromagnetic response array (1), a second electromagnetic response array (3) connected to the intermediate connection structure (2);
the first electromagnetic response array (1) comprises: at least one first electromagnetic response unit (11);
the first electromagnetic response unit (11) includes: a first semiconductor dielectric layer (111), a first cross metal structure (112) arranged on one side surface of the first semiconductor dielectric layer (111), and a first diode (113) integrated on the first semiconductor dielectric layer (111);
the first metal arm (112 a) of the first cross metal structure (112) is provided with a first gap, and two opposite ends of the first gap are used for being respectively connected with two electrodes of the first diode (113);
the first semiconductor dielectric layer (111) includes: a first sapphire substrate (111 a), a first GaN buffer layer (111 b), a first GaN channel layer (111 c), a first AlN layer (111 d), a first AlGaN barrier layer (111 e) and a first SiN passivation layer (111 f) which are sequentially arranged;
The first cross metal structure (112) is disposed on the first SiN passivation layer (111 f);
the first diode (113) is a transverse AlGaN/GaN Schottky barrier diode;
the second electromagnetic response array (3) comprises: at least one second electromagnetic response unit (31);
the second electromagnetic response unit (31) includes: a second semiconductor dielectric layer (311), a second diode (313) integrated on the second semiconductor dielectric layer (311), and a second metal structure (312) formed on one side of the second semiconductor dielectric layer (311);
the second metal arm (312 a) of the second cross-shaped metal structure (312) is provided with a second gap, and two opposite ends of the second gap are used for being respectively connected with two electrodes of the second diode (313);
the second semiconductor dielectric layer (311) includes: a second sapphire substrate (311 a), a second GaN buffer layer (311 b), a second GaN channel layer (311 c), a second AlN layer (311 d), a second AlGaN barrier layer (311 e) and a second SiN passivation layer (311 f) which are sequentially arranged;
-the second metal structure (312) is arranged on the second SiN passivation layer (311 f);
The second diode (313) is a lateral AlGaN/GaN Schottky barrier diode.
2. The micro-nano hybrid integrated energy selection surface according to claim 1, wherein the first electromagnetic response array (1) and the second electromagnetic response array (3) are connected on opposite sides of the intermediate connection structure (2), respectively; the first cross metal structure (112) is arranged on one side, far away from the middle connecting structure (2), of the first semiconductor dielectric layer (111), and the second cross metal structure (312) is arranged on one side, far away from the middle connecting structure (2), of the second semiconductor dielectric layer (311).
3. The micro-nano hybrid integrated energy selection surface according to claim 2, wherein four first metal arms (112 a) of the first cross metal structure (112) are respectively provided with the first slits, and the first diodes (113) are arranged in one-to-one correspondence with the first slits;
the four second metal arms (312 a) of the second herringbone metal structure (312) are respectively provided with the second gaps, and the second diodes (313) are arranged in one-to-one correspondence with the second gaps.
4. A micro-nano hybrid integrated energy selection surface according to claim 3, characterized in that the length of the first cross-shaped metal structure (112) in X-axis directionp tx The method meets the following conditions: 2mm is less than or equal top tx Length in Y-axis direction less than or equal to 3mmp ty The method meets the following conditions: 2mm is less than or equal top ty ≤3mm；
Width of the first metal arm (112 a)aThe method meets the following conditions: 0.05mm less than or equal toa≤0.2mm;
The length of the second cross-shaped metal structure (312) in the X-axis directionp bx The method meets the following conditions:p bx ＜p tx length in Y-axis directionp by The method meets the following conditions:p by ＜p ty ；
width of the second metal arm (312 a)bThe method meets the following conditions: 0.05mm less than or equal tob≤0.2mm。
5. The micro-nano hybrid integrated energy selection surface according to claim 4, wherein the thickness of the first semiconductor dielectric layer (111) and the second semiconductor dielectric layer (311) are uniform and satisfy: 0.5mm less than or equal toh 1 ≤0.1mm。
6. The micro-nano hybrid integrated energy selection surface according to claim 5, wherein the first electromagnetic response array (1) has L of the first electromagnetic response units (11), and the first electromagnetic response units (11) are arranged in a P x Q array; wherein, p×q=l, P, Q is a positive integer and satisfies p×q being not less than 2;
the second electromagnetic response array (3) is provided with N second electromagnetic response units (31), and the second electromagnetic response units (31) are arranged in a W multiplied by V array; wherein w×v=n, W, V is a positive integer and satisfies w×v be 2 or more.
7. The micro-nano hybrid integrated energy selection surface according to claim 6, wherein the first cross metal structure (112) is made of gold;
the second metal structure (312) is made of gold.
8. The micro-nano hybrid integrated energy selection surface according to claim 7, wherein the first diode (113) comprises: a first metal anode (113 a), a first metal cathode (113 b), and two first metal layers (113 c) respectively connecting the first metal anode (113 a) and the first metal cathode (113 b);
the first metal anode (113 a) and the first metal cathode (113 b) are embedded on the first SiN passivation layer (111 f) and are respectively connected with the first AlGaN barrier layer (111 e); wherein the first metal anode (113 a) is in schottky contact with the first AlGaN barrier layer (111 e), and the first metal cathode (113 b) is in ohmic contact with the first AlGaN barrier layer (111 e);
the first metal layer (113 c) is integrally provided with the first metal arm (112 a);
the second diode (313) comprises: a second metal anode (313 a), a second metal cathode (313 b), and two second metal layers (313 c) respectively connecting the second metal anode (313 a) and the second metal cathode (313 b);
The second metal anode (313 a) and the second metal cathode (313 b) are embedded on the second SiN passivation layer (311 f) and are respectively connected with the second AlGaN barrier layer (311 e); wherein the second metal anode (313 a) is in schottky contact with the second AlGaN barrier layer (311 e), and the second metal cathode (313 b) is in ohmic contact with the second AlGaN barrier layer (311 e);
the second metal layer (313 c) is provided integrally with the second metal arm (312 a).
9. The micro-nano hybrid integrated energy selection surface according to claim 8, wherein the intermediate connection structure (2) comprises: at least one intermediate square ring unit (2 a);
the intermediate square ring unit (2 a) includes: the dielectric layer comprises a first metal square ring (21), a dielectric layer (22) and a second metal square ring (23);
the first metal square ring (21) and the second metal square ring (23) are respectively arranged on two opposite sides of the dielectric layer (22), and the shapes and the sizes of the first metal square ring (21) and the second metal square ring (23) are consistent;
the widths of the first metal square ring (21) and the second metal square ring (23) in the X direction are P mx The method meets the following conditions: the thickness of the steel is less than or equal to 3mmP mx Width in Y direction of less than or equal to 6mmP my The method meets the following conditions: the thickness of the steel is less than or equal to 3mmP my Line width less than or equal to 6mmwThe method meets the following conditions: 0.1mm less than or equal tow≤0.4mm；
Thickness of the dielectric layer (22)h 2 The method meets the following conditions: the thickness of the steel is less than or equal to 1mmh 2 ≤2mm。
10. The micro-nano hybrid integrated energy selection surface according to claim 9, wherein the intermediate connection structure (2) has M intermediate square ring units (2 a), and the intermediate square ring units (2 a) are arranged in an R x S array; wherein r×s=m, R, S is a positive integer;
the first electromagnetic response array (1), the intermediate connection structure (2) and the second electromagnetic response array (3) satisfy:p tx ×P= p mx ×R= p bx ×W，p ty ×Q= p my ×S= p by ×V。
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