CN115566437B - X-waveband broadband energy selection surface - Google Patents
X-waveband broadband energy selection surface Download PDFInfo
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- CN115566437B CN115566437B CN202211409328.XA CN202211409328A CN115566437B CN 115566437 B CN115566437 B CN 115566437B CN 202211409328 A CN202211409328 A CN 202211409328A CN 115566437 B CN115566437 B CN 115566437B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention relates to an X-waveband broadband energy selection surface, which comprises: a plurality of electromagnetic superunits arranged in an array; the electromagnetic superunit includes: the circuit structure comprises a medium substrate with a regular shape and a circuit structure arranged on one side of the medium substrate; the circuit structure is a symmetrical structure and is arranged coaxially with the dielectric substrate; the circuit structure includes: a plurality of right-angle micro-strips and a plurality of annular micro-strip structures; a plurality of the annular microstrip structures are arranged at equal intervals along an annular shape; the right-angle micro-strips are respectively used for connecting the adjacent annular micro-strip structures so as to enable the annular micro-strip structures to be mutually conducted. The invention has the electromagnetic energy selection effect of X wave band, can self-adaptively change the self working state according to the space field intensity, allows the low-power signal to pass through with low loss, prevents the strong electromagnetic energy from entering, effectively reduces the insertion loss of the low-power signal and improves the protection efficiency.
Description
Technical Field
The invention relates to the field of strong electromagnetic pulse protection, in particular to an X-waveband broadband energy selection surface.
Background
The intellectualization of modern electronic information systems is greatly developed, the integration degree is higher and higher, the equipment size is smaller and smaller, and the density of electronic devices is higher and higher. The higher the electronization degree of the equipment system, the more sensitive the equipment system is to the change of the surrounding electromagnetic field, voltage and current. Experimental studies show that electromagnetic pulses can be coupled into an electronic system to affect the normal operation of equipment to different degrees, and when the coupling energy exceeds a certain threshold, damage to sensitive devices can be caused, so that the whole system is failed or permanently damaged. Both intentional and unintentional radiation of high frequency band and high power level microwaves can damage the electronics of the equipment in a remote and non-contact manner, thereby paralyzing the whole equipment system. How to effectively protect the safe and reliable operation of an electronic information system in a complex electromagnetic environment becomes one of the problems which need to be solved urgently.
The development of high-frequency band devices has created new challenges and requirements for electromagnetic shielding technology. In recent years, the fifth generation mobile communication system 5G has become a focus of research in the communication industry and academia, and the frequency band of 5G communication has covered the X frequency band (8-12 GHz). Meanwhile, part of satellite communication is already covered to the X band. Therefore, the need for electromagnetic protection in the microwave frequency range in wireless communication systems is also increasing.
At present, most protection means for strong electromagnetic threats are "back door" protection means such as filtering, shielding and grounding (for example, reference [1] [2 ]), and these methods are simple and convenient from the viewpoint of circuit design, but increase the complexity and design difficulty of the system. And aiming at the problem that a high-power amplitude limiter is mainly additionally arranged in a front-end circuit in front, although the high-power attenuator can greatly attenuate the current flowing into the circuit, the high-power attenuator can influence the passing of normal signals while meeting the requirement of greatly attenuating the signals. In addition, although the front-end additional filter or the Frequency Selective Surface (FSS) can isolate the out-of-band high-power signal, the self-adaptive change of the working state of the front-end additional filter or the frequency selective surface cannot be realized according to the change of the electromagnetic environment, and the strong electromagnetic pulse with the frequency in the pass band cannot be effectively protected.
Although the reference [3] proposes the concept of an energy selection surface, that is, the self-adaptive protection device can adaptively change the self-working state according to the spatial field intensity and provide the self-adaptive protection for the in-band strong electromagnetic pulse. However, the working frequency is at L band or below, which cannot meet the protection requirement of high frequency band electronic system. Reference [4] realizes the protection of the S-band, but it includes a two-layer structure, the structure is complex, and the number of diodes required is large. Compared with the working frequency band, the published literature reports that no energy selection device applicable to the X wave band exists for a while.
Reference [1] Yankeen, raney, beam Source, etc. research on electromagnetic pulse protection technology at antenna ports of communication devices [ J ] Ship electronics engineering, 2012, vol.32 (8): 61-63
Reference [2] Zhang Zhonglian, research on radio frequency front-stage electromagnetic protection technology of ultrashort wave communication system [ D ]. Chengdu of electronic technology university, 2009
Reference [3] chinese patent CN101754668B, patent name "an electromagnetic energy selective surface device"
Reference [4] chinese patent CN109451718, patent name "an ultra-wideband energy selective surface".
Disclosure of Invention
The invention aims to provide an X-band broadband energy selection surface which is used for meeting the requirements of low insertion loss and high protection efficiency in an X-band.
To achieve the above object, the present invention provides an X-band broadband energy selective surface, comprising: a plurality of electromagnetic superunits arranged in an array;
the electromagnetic superunit includes: the circuit structure comprises a medium substrate with a regular shape and a circuit structure arranged on one side of the medium substrate;
the circuit structure is a symmetrical structure and is arranged coaxially with the dielectric substrate;
the circuit structure includes: a plurality of right-angle micro-strips and a plurality of annular micro-strip structures;
a plurality of annular microstrip structures are arranged at equal intervals along the ring shape;
the right-angle micro-strips are respectively used for connecting the adjacent annular micro-strip structures so as to enable the annular micro-strip structures to be mutually conducted.
According to an aspect of the invention, the annular microstrip structure comprises: inductance microstrip, parallel microstrip and diode;
the diode is connected with the parallel micro-strip in a welding mode;
the parallel micro-strip and the inductance micro-strip are connected in parallel to form a closed annular structure.
According to one aspect of the invention, the inductive microstrip comprises: an inductance part, a first connection part and a second connection part respectively arranged at two opposite ends of the length direction of the inductance part;
the inductor part is of a roundabout bent microstrip line structure;
the first connecting part and the second connecting part are linear microstrip line structures with the same structure size;
the length directions of the first connecting part and the second connecting part are parallel to the length direction of the inductance part, and the first connecting part and the second connecting part are arranged in an aligned mode.
According to an aspect of the present invention, the inductance section includes: a plurality of first components in the shape of long strips and a plurality of second components in the shape of long strips;
the length direction of the first assembly is parallel to the length direction of the inductance part, the length direction of the second assembly is perpendicular to the length direction of the inductance part, and the adjacent second assemblies are connected end to end through the first assemblies;
the first connecting part and the second connecting part are fixedly connected with the end parts of the second assemblies respectively at two opposite ends of the inductance part in the length direction, wherein the length of the second assemblies connected with the first connecting part and the second connecting part is smaller than that of the rest of the second assemblies, and the second assemblies used for connecting the first connecting part and the second connecting part extend in the same direction.
According to one aspect of the invention, the inductive microstrip is made of copper material;
the thickness of the inductance microstrip is 0.017mm or 0.035mm, the microstrip line widthw a 0.1mm, microstrip total line lengthlSatisfies the following conditions: less than or equal to 10mml≤20mm;
The second component is provided withN 1 A strip, the overall length of the inductor microstripl e Satisfies the following conditions: less than or equal to 3mml e Not more than 4mm and the overall width of the shapeh b Satisfies the following conditions:h b =(l-7g a +2w a -2l f +2h a )/N 1 wherein, in the step (A),g a representing the spacing of adjacent said second components, denoted asg a =( l e -2l f -N 1 w a +2w a )/( N 1 -1)，l f Representing the length of the first connecting portion and the second connecting portion, taken at 0.5mm,h a the width of the notch at one side of the first connecting part, the second connecting part and the width direction of the inductance microstrip is 0.5mm.
According to one aspect of the invention, the parallel microstrip comprises: the microstrip line comprises a first L-shaped microstrip structure, a straight microstrip structure and a second L-shaped microstrip structure;
the straight microstrip structure is positioned between the first L-shaped microstrip structure and the second L-shaped microstrip structure; one straight edge of the first L-shaped microstrip structure, one straight edge of the straight microstrip structure and one straight edge of the second L-shaped microstrip structure are aligned with each other and are arranged at intervals.
According to one aspect of the invention, the parallel microstrip is made of copper material;
the thickness of the parallel microstrip is 0.017mm or 0.035mm, and the overall length of the shape thereofl a The overall length of the inductor microstripl e Uniform and overall width of its profilel c Satisfies the following conditions:l c >h a +w b +0.1mm, wherein,w b the line width of the parallel microstrip is represented, and the following conditions are satisfied:w b =2*w a ～3*w a ；
the shapes and the sizes of the first L-shaped microstrip structure and the second L-shaped microstrip structure are consistent;
the lengths of straight sides of the first L-shaped microstrip structure and the second L-shaped microstrip structure, which are aligned with the straight microstrip structure, satisfy:l g =l b /2+w b (ii) a Wherein, the first and the second end of the pipe are connected with each other,l b represents the length of the straight microstrip structure, which satisfies:l b =(l a -2g d -2w b )/2，g d and the spacing distance between the straight microstrip structure and the straight edge of the first L-shaped microstrip structure and the straight edge of the second L-shaped microstrip structure is represented.
According to one aspect of the invention, the diodes are respectively welded between the straight microstrip structure and the straight edge of the first L-shaped microstrip structure and between the straight microstrip structure and the straight edge of the second L-shaped microstrip structure;
the junction capacitance of the diode is less than 0.05pF, and the on-resistance is less than 8 ohm.
According to one aspect of the invention, the right-angle microstrip is made of a copper material;
the length and the width of right angle microstrip are unanimous, and satisfy: less than or equal to 1mml d ≤2mm；
The line width of the right-angle microstripw c Satisfies the following conditions: 0.2mm is less than or equal tow c Less than or equal to 1mm and the thickness is 0.017mm.
According to one aspect of the invention, in the circuit structure, the number of the right-angle micro-strips is 4, and the number of the annular micro-strip structures is four;
the plurality of electromagnetic super units are arranged in an array mode of M multiplied by N, wherein M multiplied by N is more than or equal to 2, and M and N are positive integers;
the electromagnetic super unit is of a square structure and has side lengthpSatisfies the following conditions: less than or equal to 8mmp≤12mm；
The thickness of the dielectric substratehSatisfies the following conditions: 0.2 mm-lessh≤0.5mm。
According to one scheme of the invention, the effect of electromagnetic energy selection of the X wave band can be realized, namely the self working state can be adaptively changed according to the space field intensity, a low-power signal is allowed to pass through with low loss, and strong electromagnetic energy is prevented from entering.
According to one scheme of the invention, the insertion loss of the energy selection surface to a low-power signal in an X wave band can be reduced, and meanwhile, the protection efficiency is improved.
According to one scheme of the invention, the X-band broadband band-pass energy selection surface only uses a single-layer structure to greatly reduce the reliability and cost of high-band self-adaptive protection function equipment, realizes innovative expansion of the energy selection surface, realizes self-adaptive protection of an X band, improves the reliability in engineering, reduces the cost and has important theoretical and engineering values.
According to one scheme of the invention, the invention can adaptively sense the electromagnetic field intensity in the space, change the working state of the self: when the energy of the electromagnetic field in the space is smaller than a switching threshold value, a passband is provided in the working frequency band, and signals are received by the system through the passband; when the energy is greater than the switching threshold, the passband is closed and the signal is reflected in the full band. Particularly, different resonant circuits are formed by equivalent capacitance and resistance before and after the diode is conducted under electromagnetic irradiation and the microstrip inductor, so that the aims of low insertion loss and high protection efficiency of the energy selection surface in an X wave band are fulfilled.
Drawings
FIG. 1 is a block diagram schematically illustrating an X-band broadband energy selective surface, in accordance with one embodiment of the present invention;
FIG. 2 is a block diagram schematically illustrating an electromagnetic superunit according to an embodiment of the present invention;
FIG. 3 is an exploded view schematically illustrating an electromagnetic superunit according to an embodiment of the present invention;
FIG. 4 is a block diagram schematically illustrating an inductive microstrip according to an embodiment of the present invention;
FIG. 5 is a block diagram schematically illustrating a parallel microstrip according to an embodiment of the present invention;
FIG. 6 is a block diagram schematically illustrating a right angle microstrip according to an embodiment of the present invention;
FIG. 7 is a schematic representation of an X-band energy selection equivalent circuit according to one embodiment of the present invention;
FIG. 8 is a schematic representation of a diode equivalent circuit according to an embodiment of the present invention;
FIG. 9 is a schematic representation of an equivalent circuit diagram for a low power signal state of an X-band broadband energy selective surface in accordance with an embodiment of the present invention;
FIG. 10 is a schematic representation of an equivalent circuit for a high power signal condition of an X-band broadband energy selective surface in accordance with an embodiment of the present invention;
FIG. 11 is a graph schematically illustrating the results of an insertion loss test of an X-band broadband energy selective surface according to one embodiment of the present invention;
fig. 12 is a graph schematically showing the results of a protection effectiveness test of an X-band broadband energy selective surface according to an embodiment of the present invention.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can also be derived from them without inventive effort.
In describing embodiments of the present invention, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship that is based on the orientation or positional relationship shown in the associated drawings, which is for convenience and simplicity of description only, and does not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus, the above-described terms should not be construed as limiting the present invention.
The present invention is described in detail below with reference to the accompanying drawings and specific embodiments, which are not described in detail herein, but the present invention is not limited to the following embodiments.
Referring to fig. 1, 2, 3, 4, 5 and 6, according to an embodiment of the present invention, an X-band broadband energy selective surface of the present invention comprises: a plurality of electromagnetic superunits 1 arranged in an array. In the present embodiment, the electromagnetic superunit 1 is arranged by a plurality of arrays to constitute the X-band broadband energy selecting surface of the present invention. Wherein, electromagnetism superunit 1 includes: a dielectric substrate 11 with a regular shape and a circuit structure 12 arranged on one side of the dielectric substrate 11. In the present embodiment, the dielectric substrate 11 is a substrate material of the entire electromagnetic superunit 1, and serves as a structural support. In the present embodiment, the material of the dielectric substrate 11 is usually a high-frequency circuit board, and may be selected from one of major boards such as rogers 5880, rogers 4350B, and tahsing microwave F4B. In the embodiment, a plurality of electromagnetic superunits 1 are arranged in an array in an M × N form, and the arrangement period is consistent with the side length, wherein M × N is greater than or equal to 2, and M and N are positive integers.
In the present embodiment, the circuit structure 12 has a symmetrical structure and is provided coaxially with the dielectric substrate 11. Wherein, circuit structure 12 is the cyclic annular symmetrical structure on the whole, wherein includes: a plurality of right-angle microstrips 121 and a plurality of annular microstrip structures 122. In the present embodiment, a plurality of annular microstrip structures 122 are arranged at equal intervals along the ring; the plurality of right-angle micro-strips 121 are respectively used for connecting adjacent annular micro-strip structures 122, so that the plurality of annular micro-strip structures 122 are mutually conducted to form an annular symmetrical structure.
Referring to fig. 1, 2 and 3, according to an embodiment of the present invention, the annular microstrip structure 122 includes: inductive microstrip 1221, shunt microstrip 1222, and diode 1223. In the present embodiment, the diode 1223 is solder-connected to the parallel microstrip 1222; the parallel microstrip 1222 and the inductance microstrip 1221 are connected in parallel to form a closed ring structure. In this embodiment, the inductive microstrip 1221, the shunt microstrip 1222, and the orthogonal microstrip 121 are formed on the dielectric substrate 11 by means of a printed circuit.
Referring to fig. 1, 2, 3 and 4, according to an embodiment of the present invention, an inductive microstrip 1221 includes: an inductance section 1221a, a first connection section 1221b and a second connection section 1221c provided at opposite ends of the inductance section 1221a in a longitudinal direction, respectively. In the present embodiment, the inductance section 1221a has a meander microstrip line structure; and the first connection portion 1221b and the second connection portion 1221c are linear microstrip line structures with the same structure size, and are used for realizing connection with the parallel microstrip 1222.
In the present embodiment, the length directions of the first connection portion 1221b and the second connection portion 1221c are parallel to the length direction of the inductance portion 1221a, and the first connection portion 1221b and the second connection portion 1221c are aligned.
Referring to fig. 1, 2, 3, and 4, according to an embodiment of the present invention, an inductance section 1221a includes: a plurality of first modules 1221a1 having a long shape, and a plurality of second modules 1221a2 having a long shape. In this embodiment, the first module 1221a1 is arranged in parallel with the longitudinal direction of the inductance section 1221a, the second module 1221a2 is arranged in perpendicular to the longitudinal direction of the inductance section 1221a, and the adjacent second modules 1221a2 are arranged end to end via the first module 1221a 1. In this embodiment, at two opposite ends of the inductance part 1221a in the length direction, the first connection part 1221b and the second connection part 1221c are fixedly connected to ends of the second module 1221a2, respectively, wherein the length of the second module 1221a2 connected to the first connection part 1221b and the second connection part 1221c is smaller than the length of the other second modules 1221a2, and the second modules 1221a2 for connecting the first connection part 1221b and the second connection part 1221c extend in the same direction. Referring to fig. 4, the first module 1221a1, the second module 1221a2, the first connection portion 1221b, and the second connection portion 1221c are all long and narrow strip-shaped structures, wherein the first module 1221a1 and the second module 1221a2 are connected perpendicularly to each other to form a meandering inductance portion 1221a, and the first connection portion 1221b and the second connection portion 1221c are respectively disposed at the head and tail ends of the inductance portion 1221 a. Since the lengths of the second assemblies 1221a2 at the end-to-end of the inductance part 1221a are shorter than those of the other second assemblies 1221a2, and one end of the shorter second assembly 1221a2 is fixedly connected to the first assembly 1221a1, the other end is an extension end freely extending in a direction away from the first assembly 1221a1, and the extension end is used for being connected to the first connection part 1221b or the second connection part 1221c. In this embodiment, the first connection portion 1221b and the second connection portion 1221c are respectively disposed perpendicular to the connected second modules 1221a2, wherein one end of the first connection portion 1221b is fixedly connected to the corresponding second module 1221a2, and the other end of the first connection portion 1221b freely extends in a direction away from the second module 1221a2 and is used for realizing the fixed connection with the parallel microstrip 1222, and similarly, the connection manner of the second connection portion 1221c and the corresponding second module 1221a2 is the same as that described above, and is not described again.
Referring to fig. 1, 2, 3 and 4, according to an embodiment of the present invention, the inductive microstrip 1221 is made of a copper material. In the present embodiment, the thickness of the inductive microstrip 1221 is 0.017mm or 0.035mm, and the microstrip line widthw a 0.1mm, microstrip total line lengthlSatisfies the following conditions: less than or equal to 10mmlLess than or equal to 20mm. In the present embodiment, the second module 1221a2 is provided withN 1 Overall length of the strip, inductor microstrip 1221 profilel e Satisfies the following conditions: less than or equal to 3mml e Not more than 4mm, and the overall width of the appearanceh b Satisfies the following conditions:h b =(l-7g a +2w a -2l f +2h a )/N 1 wherein, in the process,g a showing the spacing of adjacent second components 1221a2, which is shown asg a =(l e -2l f -N 1 w a +2w a )/(N 1 -1)，l f Indicating the length of the first and second connection portions 1221b and 1221c, 0.5mm,h a the width of the notch, which indicates the first connection portion 1221b and the second connection portion 1221c and one side of the inductance microstrip 1221 in the width direction, is 0.5mm.
In this embodiment, the set number of the second components 1221a2 can be obtained by, in the HFSS electromagnetic simulation software, determining the remaining parameters according to respective constraints, and taking the number of the second components 1221a2 as a variable (positive integer) and taking the insertion loss less than 1dB and the guard performance greater than 10dB in the operating frequency band as optimization targets, so as to obtain the optimal number. In the present embodiment, the second assemblies 1221a2 are provided in 8 pieces.
The inductance of the invention in the X wave band can be effectively improved by the inductance microstrip 1221.
Referring to fig. 1, 2, 3 and 5, according to an embodiment of the present invention, the shunt microstrip 1222 includes: a first L-shaped microstrip structure 1222a, a straight microstrip structure 1222b and a second L-shaped microstrip structure 1222c. In this embodiment, the straight microstrip structure 1222b is located between the first L-shaped microstrip structure 1222a and the second L-shaped microstrip structure 1222 c; one straight side of the first L-shaped microstrip structure 1222a, one straight side of the straight microstrip structure 1222b and one straight side of the second L-shaped microstrip structure 1222c are aligned with each other and are disposed at intervals. The other straight side of the first L-shaped microstrip structure 1222a and the other straight side of the second L-shaped microstrip structure 1222c are used to connect with the first connection portion 1221b and the second connection portion 1221c of the inductance microstrip 1221, respectively. In the present embodiment, the first L-shaped microstrip structure 1222a and the second L-shaped microstrip structure 1222c are symmetrically arranged with respect to a center line of the straight microstrip structure 1222 b.
Referring to fig. 1, 2, 3 and 5, according to an embodiment of the present invention, the parallel microstrip 1222 is made of a copper material; the thickness of the parallel microstrip 1222 is 0.017mm or 0.035mm, and the overall length of the shape thereofl a Overall length of the inductor microstrip 1221l e Uniform, overall height of its profilel c Satisfies the following conditions:l c >h a +w b +0.1mm, wherein,w b represents the line width of the parallel microstrip 1222, and satisfies:w b =2*w a ～3*w a (ii) a Preferably, the first and second liquid crystal materials are,w b =2*w a it is noted that the first L-shaped microstrip structure 1222a, the straight microstrip structure 1222b and the second L-shaped microstrip structure 1222cThe microstrip widths are consistent, and the line widths of the parallel microstrip 1222 are the microstrip widths of the first L-shaped microstrip structure 1222a, the straight microstrip structure 1222b and the second L-shaped microstrip structure 1222c.
Through the arrangement, the line width of the parallel microstrip 1222 is set to be twice of the microstrip line width of the inductance microstrip 1221, and the overall height of the parallel microstrip 1222 is set within the above range, so that the parasitic inductance of the parallel microstrip 1222 can be effectively reduced, and the working performance of the invention is effectively improved.
In this embodiment, the first L-shaped microstrip structure 1222a and the second L-shaped microstrip structure 1222c are uniform in shape and size; the lengths of the straight sides of the first L-shaped microstrip structure 1222a and the second L-shaped microstrip structure 1222c aligned with the straight microstrip structure 1222b satisfy:l g =l b /2+w b (ii) a Wherein the content of the first and second substances,l b represents the length of the straight microstrip structure 1222b, which satisfies:l b =(l a -2g d -2w b )/2，g d the straight microstrip structure 1222b is spaced from the straight sides of the first and second L-shaped microstrip structures 1222a and 1222c, respectively, by a distance that matches the pitch of the solder pins of the diode 1223, so as to ensure the accurate position of the diode 1223.
Referring to fig. 1, 2, 3 and 5, according to an embodiment of the present invention, a diode 1223 is respectively soldered between the straight microstrip structure 1222b and the straight edge of the first L-shaped microstrip structure 1222a and between the straight microstrip structure 1222b and the straight edge of the second L-shaped microstrip structure 1222c. In this embodiment, the diode 1223 has a junction capacitance of less than 0.05pF and an on-resistance of less than 8 ohms.
The diode 1223 arranged as described above ensures that the present invention has low loss and high protection efficiency in the X-band.
As shown in fig. 6, the right-angle microstrip 121 is made of copper material according to an embodiment of the present invention. Wherein, the length and the width of right angle microstrip 121 are unanimous, and satisfy: less than or equal to 1mml d Less than or equal to 2mm; line width of the right-angle microstrip 121w c Satisfies the following conditions: 0.2mm is less than or equal tow c Less than or equal to 1mm and the thickness is 0.017mm.
The right-angle microstrip 121 arranged as described above provides a small distributed inductance and at the same time achieves conduction with the annular microstrip structure 122.
Referring to fig. 1, 2 and 3, in the circuit structure 12, there are 4 right-angle microstrips 121 and four annular microstrip structures 122 according to one embodiment of the present invention.
Referring to fig. 1, 2 and 3, according to one embodiment of the present invention, the electromagnetic superunit 1 has a square structure with a side lengthpSatisfies the following conditions: less than or equal to 8mmp≤12mm。
As shown in FIG. 3, according to one embodiment of the present invention, the thickness of the dielectric substrate 11hSatisfies the following conditions: 0.2mm is less than or equal toh≤0.5mm。
To further illustrate the working principle of the present invention, the equivalent circuit thereof is further described.
As shown in FIG. 7, it can be seen from the equivalent circuit diagram of the present invention that the equivalent inductance and the equivalent capacitance of the inductance microstrip 1221 are respectively the inductanceL 1 And a capacitorC 1 The equivalent inductance and the equivalent capacitance of the parallel microstrip 1222 are respectively represented by inductanceL L And a capacitorC L Diode 1223, shown soldered to parallel microstrip 1222, is a diodeD 1 And (4) showing. In general, as shown in FIG. 8, diode 1223 behaves as a resistor under low power RF signalsRAnd a capacitorC j When the diode 1223 is turned on, the capacitance effect disappears and becomes equivalent to a resistorR. By means of resistorsRAnd a capacitorC j Instead of the diode 1223 in fig. 7, it is thus possible to obtain equivalent circuits of the invention for low power signals and high power signals as shown in fig. 9 and 10, respectively. Since the main function of the parallel microstrip 1222 is inductance, the equivalent capacitance is small, and the capacitance is smallC L Can be ignored in the analysis. In FIG. 9, there are two pairs of capacitorsResonant circuits formed by inductors, each being an inductorL 1 And a capacitorC 1 Form a series resonant circuit and an inductorL L And a capacitorC j Then a parallel resonance circuit is formed, and as the impedance of the parallel resonance circuit at the resonance frequency is infinite, a pass band can be formed in the X band, so that the invention has a low-loss pass band in the X band. Due to the capacitance in FIG. 10C j Disappear and the resistanceR Is much smaller than the inductanceL L Make the inductanceL L Is short-circuited while leaving only one series resonance inductorL 1 And a capacitorC 1 The impedance of the series resonance at the resonance frequency is infinitesimal, so that an ideal stop band can be formed at the X wave band to prevent signals from passing through, and the invention has higher protection efficiency at the X wave band.
The present invention is further exemplified to further illustrate its performance.
Example 1
As shown in fig. 1, in the present embodiment, the X-band broadband energy selective surface of the present invention is made by using a printed circuit board, wherein 100 electromagnetic superunits 1 are included and arranged in a 10 × 10 array with a period of arrangementp=10mm, i.e. the peripheral dimension of the electromagnetic superunit 1 isp×p=10mm × 10 mm. In this embodiment, the dielectric substrate 11 is a substrate material of the whole X-band broadband energy selective surface, and is located at the bottom layer of the whole structure as shown in fig. 2 and 3 to serve as a structural support. The material of the dielectric substrate 11 is preferably Tahsing microwave F4B265 plate with the dielectric constant of 2.65 and the thicknesshIs 0.25mm. Has a size ofp×p =10mm×10mm。
In this embodiment, the inductive microstrip 1221 is made of copper and has a thickness of 0.017mm, as shown in fig. 4. Microstrip line width of the inductance microstrip 1221w a 0.1mm, microstrip total line lengthlIs 15.3mm. Overall length of the inductor microstrip 1221 profilel e 3.5mm, overall width of the appearanceh b Is 1.7mm. In the present embodiment, the first and second connection portions 1221b and 1221c are the same size and lengthl f Is 0.5mm, and the first connection part 1221b and the second connection part 1221c form a gap width with the inductance microstrip 1221 in the width directionh a Is 0.5mm.
For convenience of explanation, the second module 1221a2 of the inductive microstrip 1221 is defined to have the same structureN 1 And (3) strips. In the present embodiment, the number of the second elements 1221a2 is set so as to reduce the size of the inductance microstrip 1221 and increase the inductance in the X-bandN 1 Spacing between adjacent second modules 1221a2 arranged in 8 rowsg a =( l e -2l f -N 1 w a +2w a )/( N 1 -1)=19/70≈0.27mm。
Further, as shown in fig. 5, the parallel microstrip 1222 is made of copper, and has a thickness of 0.017mm. The shunt microstrip 1222 mainly functions to shunt two diodes 1223 in parallel with the inductive microstrip 1221. The first L-shaped microstrip structure 1222a has two perpendicular straight sides, and in this embodiment, the line width of the first L-shaped microstrip structure 1222a isw b Is 0.2mm (namely the line width of the parallel microstrip 1222), and the whole width of the appearancel c 0.825mm, and the overall length of the outer shapel g Which is 0.825mm (i.e., the length of one side of the first L-shaped microstrip structure 1222a aligned with the straight microstrip structure 1222 b). The second L-shaped microstrip structure 1222c has the same size as the first L-shaped microstrip structure 1222a, and is symmetrical with respect to the center line of the straight microstrip structure 1222 b. The line width of the straight microstrip structure 1222b is the same as the line width of the first L-shaped microstrip structure 1222aw b =0.2 mm (i.e. the line width of the parallel microstrip 1222), the length of the straight microstrip structure 1222bl b Is 1.25mm. In this embodiment, the straight microstrip structure 1222b is spaced apart from the straight sides of the first and second L-shaped microstrip structures 1222a and 1222c, respectively, by a distanceg d Each 0.3mm, which is consistent with the spacing of the two pins of diode 1223. Whole parallel microstrip1222 overall length of the profilel a 3.5mm, overall width of the appearancel c Is 0.825mm.
Further, as shown in fig. 6, the right-angle microstrip 121 has an L-shaped microstrip line structure, is made of copper, has a thickness of 0.017mm, and is mainly used for providing a small distributed inductance function and simultaneously connecting two inductance microstrips 1221 and two parallel microstrips 1222. Line width of right-angle microstrip 121w c Is 0.6mm, and the length and width of the right-angle microstrip 121 are consistent and are alll d =1.75 mm。
Further, the diode 1223 is a diode device, and is connected by soldering to the first L-shaped microstrip structure 1222a and the straight microstrip structure 1222b at a spacing therebetween, and the second L-shaped microstrip structure 1222c and the straight microstrip structure 1222b at a spacing therebetween, and a diode 1223 is soldered to each of the two spacings. In this embodiment, two parameters of the junction capacitance and the on-resistance of the diode should be considered for the type selection of the diode 1223, specifically, the junction capacitance is selected to be 0.04pF, and the on-resistance is selected to be 5 ohms, so as to satisfy the requirement that the designed X-band broadband energy selection surface has low loss and high protection efficiency in the X-band.
By the above arrangement, the electromagnetic super unit 1 includes a dielectric substrate 11, 4 right- angle microstrips 121, 4 inductive microstrips 1221, 8 diodes 1223, and 4 parallel microstrips 1222. In the present embodiment, in the formed square-ring-shaped circuit structure 12, the inductance microstrip 1221 is provided on the outer side, and the parallel microstrip 1222 is provided on the inner side, so that the two are connected in parallel.
As shown in fig. 7, based on the above arrangement and with reference to the equivalent circuit diagram, the equivalent inductance and the equivalent capacitance of the inductance microstrip 1221 are respectively inductancesL 1 =10.03 nH and capacitanceC 1 = 0.029 pF, the equivalent inductance and equivalent capacitance of the parallel microstrip 1222 are respectively the inductanceL L =10.88 nH and capacitanceC L =0.013 pF. Diode 1223 diode soldered to parallel microstrip 1222D 1 And (4) showing. Referring to fig. 8, the diode 1223 behaves as a resistor under low power rf signalsR=5Omega and a capacitorC j A series connection of 0.04pF, and a capacitance effect disappears when the diode 1223 is turned on, which is equivalent to a resistanceR=5 Ω. By means of resistorsRAnd a capacitorC j Instead of the diodes in fig. 7, equivalent circuits of the invention at low power signals and high power signals are obtained as shown in fig. 9 and 10, respectively.
With the above arrangement, since the parallel microstrip 1222 mainly functions as an inductor, the equivalent capacitance thereon is small, and the capacitance is smallC L Can be ignored in the analysis. In fig. 9, there are two pairs of resonant circuits composed of capacitors and inductors, respectivelyL 1 And a capacitorC 1 Form a series resonant circuit and an inductorL L And a capacitorC j Then a parallel resonance circuit is formed, and because the impedance of the parallel resonance circuit at the resonance frequency is infinite, a pass band can be formed in the X frequency band, so that the invention has a low-loss pass band in the X wave band. Due to the capacitance in FIG. 10C j Disappear and the resistanceRIs much smaller than the inductanceL L Make the inductanceL L Is short-circuited while leaving only one series resonanceL 1 And a capacitorC 1 The impedance of the series resonance at the resonance frequency is infinitesimal, so that an ideal stop band can be formed at the X wave band to prevent signals from passing through, and the invention has higher protection efficiency at the X wave band.
Example 2
In this embodiment, based on the design parameters in example 1, an X-band broadband energy selection surface (i.e., a sample) was processed by a printed circuit process, and the processed sample was tested for a low power signal and a high power signal in an X-band waveguide, thereby verifying the feasibility and the practicability of the scheme.
Specifically, in this embodiment, the insertion loss test is performed by selecting a mode in which M × N =2 × 1=2 electromagnetic superunits 1 are arranged in an array, and the arrangement period is 10mm, so as to obtain the sample insertion loss test result shown in fig. 11. In fig. 11, the abscissa is frequency and the ordinate is insertion loss, and it can be seen from fig. 11 that the insertion loss of the energy selecting surface (sample) designed based on the foregoing parameters is less than 1dB within a frequency width of 8.55 to 12.95GHz, satisfying the requirement of low insertion loss in the broadband of the X band. Fig. 12 is a test result of the protection effect obtained by testing the sample in the waveguide, the abscissa is frequency, the ordinate is protection efficiency, and it can be seen from fig. 12 that the protection efficiency is greater than 10dB within the frequency width of 8-13 GHz, and the protection efficiency reaches 40.8dB at maximum at 10.5GHz, which meets the requirement of high protection efficiency in the broadband of the X-band.
Further, the performance parameters of the above samples were summarized by multiple tests and compared with the working of the schemes in references 5 and 6, as shown in table 1 below:
TABLE 1
By comparing the test results of the above samples with those of reference 5 and reference 6, the operating band of the present invention is higher and can cover the X band, whereas reference 5 and reference 6 can only operate below the C band. It can be seen that the insertion loss of the energy selection surface (sample) designed based on the above parameters is less than 1dB within the frequency width of 8.55 to 12.95GHz, which satisfies the requirement of low insertion loss of the broadband in the X band, and meanwhile, the working bandwidth of the present invention is wider, which reaches 4.4GHz, the insertion loss is smaller, and the protection efficiency is larger, see fig. 11 and 12.
References [5] N. Hu et al, "Design of ultra wideband Energy-efficient-Selective Surface for High-Power Microwave Protection," in IEEE Antennas and Wireless performance characteristics, vol.18, no. 4, pp.669-673, april 2019, doi: 10.1109/LAWP.2019.2900760 (ultra wideband Energy Selective Surface Design for High Power Microwave Protection, IEEE antenna and Wireless transmission prompter)
Reference [6] D.Qin, R.Ma, J.Su, X.Chen, R.Yang and W.Zhang, "Ultra-wide band Strong Field Protection Device Based on Metasource," in IEEE Transactions on Electromagnetic Compatibility, vol.62, no. 6, pp.2842-2848, dec.2020, doi: 10.1109/TEMC.2020.3020840 (Ultrasurface-Based Ultra-Wideband high-Field Protection Device, IEEE Electromagnetic Compatibility journal)
The foregoing is merely exemplary of particular aspects of the present invention and devices and structures not specifically described herein are understood to be those of ordinary skill in the art and are intended to be implemented in such conventional ways.
The above description is only one embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. An X-band broadband energy selective surface, comprising: a plurality of electromagnetic superunits (1) arranged in an array;
the electromagnetic superunit (1) comprises: a dielectric substrate (11) with a regular shape and a circuit structure (12) arranged on one side of the dielectric substrate (11);
the circuit structure (12) is a symmetrical structure and is arranged coaxially with the dielectric substrate (11);
the circuit arrangement (12) comprises: a plurality of right-angle microstrips (121) and a plurality of annular microstrip structures (122);
a plurality of the annular microstrip structures (122) are arranged along a ring at equal intervals;
the right-angle micro-strips (121) are respectively used for connecting the adjacent annular micro-strip structures (122) so as to enable the annular micro-strip structures (122) to be mutually conducted;
the annular microstrip structure (122) comprises: an inductance microstrip (1221), a parallel microstrip (1222) and a diode (1223);
the diode (1223) is connected with the parallel microstrip (1222) in a welding mode;
the parallel microstrip (1222) and the inductance microstrip (1221) are connected in parallel to form a closed annular structure.
2. The X-band broadband energy selective surface of claim 1, wherein the inductive microstrip (1221) comprises: an inductance section (1221 a), a first connection section (1221 b) and a second connection section (1221 c) provided at opposite ends of the inductance section (1221 a) in the longitudinal direction, respectively;
the inductance part (1221 a) is in a roundabout microstrip line structure;
the first connection portion (1221 b) and the second connection portion (1221 c) are linear microstrip line structures with consistent structural dimensions;
the length direction of the first connection portion (1221 b) and the second connection portion (1221 c) is parallel to the length direction of the inductance portion (1221 a), and the first connection portion (1221 b) and the second connection portion (1221 c) are aligned.
3. The X-band broadband energy selective surface of claim 2, wherein the inductive portion (1221 a) comprises: a plurality of first modules (1221 a 1) having a long strip shape and a plurality of second modules (1221 a 2) having a long strip shape;
the length direction of the first assembly (1221 a 1) is parallel to the length direction of the inductance part (1221 a), the length direction of the second assembly (1221 a 2) is perpendicular to the length direction of the inductance part (1221 a), and the adjacent second assemblies (1221 a 2) are connected end to end through the first assembly (1221 a 1);
at two opposite ends of the inductance part (1221 a) in the length direction, the first connection part (1221 b) and the second connection part (1221 c) are respectively and fixedly connected with the end of the second component (1221 a 2), wherein the length of the second component (1221 a 2) connected with the first connection part (1221 b) and the second connection part (1221 c) is smaller than the length of the rest of the second components (1221 a 2), and the second components (1221 a 2) used for connecting the first connection part (1221 b) and the second connection part (1221 c) extend in the same direction.
4. The X-band broadband energy selective surface of claim 3, wherein the inductive microstrip (1221) is made of copper material;
the thickness of the inductance microstrip (1221) is 0.017mm or 0.035mm, and the microstrip line widthw a 0.1mm, microstrip bus lengthlSatisfies the following conditions: less than or equal to 10mml≤20mm;
The second component (1221 a 2) is provided withN 1 The overall length of the profile of the inductive microstrip (1221)l e Satisfies the following conditions: less than or equal to 3mml e Not more than 4mm and the overall width of the shapeh b Satisfies the following conditions:h b =(l-7g a +2w a -2l f +2h a )/N 1 wherein, in the process,g a represents the spacing of adjacent said second modules (1221 a 2), which is represented byg a =( l e -2l f -N 1 w a +2w a )/( N 1 -1)，l f Represents the length of the first connection portion (1221 b) and the second connection portion (1221 c), taken at 0.5mm,h a the width of the notch at one side of the first connection part (1221 b) and the second connection part (1221 c) in the width direction of the inductance microstrip (1221) is 0.5mm.
5. The X-band broadband energy selective surface of claim 4, wherein the shunt microstrip (1222) comprises: a first L-shaped microstrip structure (1222 a), a straight microstrip structure (1222 b) and a second L-shaped microstrip structure (1222 c);
the straight microstrip structure (1222 b) is located between the first L-shaped microstrip structure (1222 a) and the second L-shaped microstrip structure (1222 c);
one straight side of the first L-shaped microstrip structure (1222 a), one straight side of the straight microstrip structure (1222 b) and one straight side of the second L-shaped microstrip structure (1222 c) are aligned with each other and arranged with a spacing.
6. The X-band broadband energy selective surface of claim 5, wherein the shunt microstrip (1222) is made of copper material;
the thickness of the parallel microstrip (1222) is 0.017mm or 0.035mm, and the overall length of the shape isl a The overall length of the inductance microstrip (1221)l e Uniform and overall width of its profilel c Satisfies the following conditions:l c >h a +w b +0.1mm, wherein,w b represents the line width of the parallel microstrip (1222), and satisfies:w b =2*w a ～3*w a ；
the first L-shaped microstrip structure (1222 a) and the second L-shaped microstrip structure (1222 c) are uniform in shape and size;
the lengths of the straight sides of the first L-shaped microstrip structure (1222 a) and the second L-shaped microstrip structure (1222 c) aligned with the straight microstrip structure (1222 b) are such that:l g =l b /2+w b (ii) a Wherein the content of the first and second substances,l b represents the length of the straight microstrip structure (1222 b) which satisfies:l b =(l a -2g d -2w b )/2，g d represents the separation distance between the straight microstrip structure (1222 b) and the straight sides of the first and second L-shaped microstrip structures (1222 a, 1222 c), respectively.
7. The X-band broadband energy selection surface of claim 6, wherein the diodes (1223) are soldered between the straight microstrip structure (1222 b) and the straight side of the first L-shaped microstrip structure (1222 a) and between the straight microstrip structure (1222 b) and the straight side of the second L-shaped microstrip structure (1222 c), respectively;
the junction capacitance of the diode (1223) is less than 0.05pF, and the on-resistance is less than 8 ohms.
8. The X-band broadband energy selective surface of claim 7, wherein the right-angle microstrip (121) is made of copper material;
the length and the width of the right-angle microstrip (121) are consistent and satisfy the following conditions: less than or equal to 1mml d ≤2mm；
The line width of the right-angle microstrip (121)w c Satisfies the following conditions: 0.2 mm-lessw c Less than or equal to 1mm and the thickness is 0.017mm.
9. The X-band broadband energy selective surface according to any one of claims 1 to 8, wherein in the circuit structure (12), there are 4 right-angle microstrips (121) and four annular microstrip structures (122);
the plurality of electromagnetic super units (1) are arranged in an array in an M multiplied by N form, wherein M multiplied by N is more than or equal to 2, and M and N are positive integers;
the electromagnetic super unit (1) is of a square structure and has side lengthpSatisfies the following conditions: less than or equal to 8mmp≤12mm；
Thickness of the dielectric substrate (11)hSatisfies the following conditions: 0.2mm is less than or equal toh≤0.5mm。
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101754668A (en) * | 2009-12-31 | 2010-06-23 | 中国人民解放军国防科学技术大学 | Electromagnetic energy selection surface |
| WO2014052913A1 (en) * | 2012-09-27 | 2014-04-03 | Northeastern University | Magnetostatic surface wave nonreciprocal tunable bandpass filters |
| CN109451718A (en) * | 2018-12-04 | 2019-03-08 | 中国人民解放军国防科技大学 | Ultra-wideband energy selection surface |
| CN109802244A (en) * | 2019-01-24 | 2019-05-24 | 西安电子科技大学 | A kind of wideband microband reflectarray antenna |
| CN115458948A (en) * | 2022-11-11 | 2022-12-09 | 中国人民解放军国防科技大学 | High-frequency ultra-wideband energy selection surface |
-
2022
- 2022-11-11 CN CN202211409328.XA patent/CN115566437B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101754668A (en) * | 2009-12-31 | 2010-06-23 | 中国人民解放军国防科学技术大学 | Electromagnetic energy selection surface |
| WO2014052913A1 (en) * | 2012-09-27 | 2014-04-03 | Northeastern University | Magnetostatic surface wave nonreciprocal tunable bandpass filters |
| CN109451718A (en) * | 2018-12-04 | 2019-03-08 | 中国人民解放军国防科技大学 | Ultra-wideband energy selection surface |
| CN109802244A (en) * | 2019-01-24 | 2019-05-24 | 西安电子科技大学 | A kind of wideband microband reflectarray antenna |
| CN115458948A (en) * | 2022-11-11 | 2022-12-09 | 中国人民解放军国防科技大学 | High-frequency ultra-wideband energy selection surface |
Non-Patent Citations (3)
| Title |
|---|
| Design of Ultrawideband Energy-Selective Surface for High-Power Microwave Protection;Ning Hu 等;《IEEE Antennas and Wireless Propagation Letters》;20190221;全文 * |
| 一种具有宽带防护作用的能量选择表面的设计;张旭宁 等;《2022年全国微波毫米波会议》;20220812;全文 * |
| 波导型能量选择电磁防护器件设计与实现;张继宏 等;《微波学报》;20220228;全文 * |
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