CN117337017A - Ku wave band high-protection energy selection surface - Google Patents
Ku wave band high-protection energy selection surface Download PDFInfo
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- CN117337017A CN117337017A CN202311273520.5A CN202311273520A CN117337017A CN 117337017 A CN117337017 A CN 117337017A CN 202311273520 A CN202311273520 A CN 202311273520A CN 117337017 A CN117337017 A CN 117337017A
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- 239000002184 metal Substances 0.000 claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000001681 protective effect Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000003780 insertion Methods 0.000 abstract description 7
- 230000037431 insertion Effects 0.000 abstract description 7
- 238000013461 design Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0086—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a single discontinuous metallic layer on an electrically insulating supporting structure, e.g. metal grid, perforated metal foil, film, aggregated flakes, sintering
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0088—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention relates to a Ku-band high-protection-performance energy selection surface which comprises two layers of medium substrates, two side metal structures and an intermediate metal structure, wherein the two side metal structures are respectively printed on the upper layer of a first layer of medium substrate and the lower layer of a second layer of medium substrate, the intermediate metal structure is printed in the middle of the two layers of medium substrates, the two side metal structures are respectively composed of four first metal patches and four diodes loaded between the first metal patches, and the intermediate metal structure is composed of a second metal patch with a slot in the middle. The Ku band high-protection energy selection surface design method is used for realizing high-power protection of electronic equipment in the Ku band, and has higher shielding effectiveness on the premise of meeting low insertion loss, so that the protection performance on high-power microwave signals is improved.
Description
Technical Field
The invention relates to the field of high-power electromagnetic protection, in particular to a Ku-band high-protection-performance energy selection surface.
Background
With the rapid development of 5G technology, modern electronic devices are developed toward high integration and miniaturization, and the requirement of an operating frequency band is gradually developed toward a high frequency band. Meanwhile, the electronic equipment is also easy to be interfered by high-power microwave, and once the electronic equipment is interfered, the electronic equipment cannot work normally, and even is damaged irreversibly. To protect the proper operation of the electronic device, many students have developed related studies on this in succession.
At present, most of methods for protecting high-power microwave interference are filtering, shielding, grounding and the like, and although the methods can effectively shield high-power signals, normal communication between internal equipment and the outside is blocked. Although the high power signals outside the passband can be filtered out by loading the filter and the frequency selective surface, the high power signals and the normal communication signals within the operating band cannot be distinguished, and thus the interference within the passband cannot be effectively protected. The energy selection surface is a structure of field-induced impedance transformation, nonlinear characteristics are realized by integrating nonlinear devices (such as PIN diodes, schottky diodes, varactors and the like) in the frequency selection surface, and the state of self impedance can be changed in response to different field strengths so as to achieve the effect of high-power protection. When a low-power signal is incident, the diode is in a cut-off state, the surface is in a high-impedance state, the diode is equivalent to a frequency selection surface, and the signal can smoothly pass through in a passband range; when a high power signal is incident, the signal strength is sufficient to turn on all the diodes, and the surface transitions from a high impedance state to a low impedance state, where the surface blocks the high power signal from passing. These two states are referred to as the transmission state and the shielding state, respectively, and attenuation caused by the incident surface of the signal in the different states is defined as insertion loss and shielding effectiveness, respectively. Generally, energy selection surfaces are required to be capable of both low insertion loss and high shielding effectiveness in the passband range.
The operating frequency of electronic devices is gradually moving toward the high frequency band, but currently there are few energy selection surfaces for high frequency band (X-band, ku-band and above), and reference [1] cn115566437a proposes an X-band wideband energy selection surface, which covers nearly the whole frequency range in the passband range of the X-band, but the shielding effectiveness in the shielding state is mostly lower than 40dB. Reference [2] cn115332780a proposes an ultra wideband energy selection surface designed for an operating band of L-band, and shielding efficiency in the shielding state is only higher than 10dB. From the viewpoint of shielding performance, the published literature reports that most energy selective surface structures have shielding effectiveness between 10 and 30dB, and few energy selective surfaces with shielding effectiveness exceeding 40dB. Therefore, it is necessary to design the energy selection surface with high frequency band and high shielding effectiveness by the structure.
Disclosure of Invention
In order to solve the technical problems in the prior art, the invention provides a structural design of a Ku wave band high-protection performance energy selection surface, which is used for realizing high-power protection of electronic equipment in the Ku wave band and has higher shielding effectiveness on the premise of meeting low insertion loss, thereby improving the protection performance on high-power microwave signals.
In order to achieve the above purpose, the technical solution of the present invention is as follows:
the utility model provides a Ku wave band high protective performance energy selection surface, includes two-layer dielectric substrate, both sides metal structure and middle metal structure, and both sides metal structure prints respectively in the upper strata of first layer dielectric substrate and the lower floor of second floor dielectric substrate, and middle metal structure prints in the centre of two-layer dielectric substrate, and both sides metal structure comprises four first metal paster and four diodes of loading between the first metal paster respectively, and middle metal structure comprises the second metal paster of middle fluting.
As a preferred embodiment, the first metal patch has one of a square, a circle, a ring, and a similar symmetrical shape.
As a preferred embodiment, the first metal patch is square in shape.
As the preferable technical scheme, the four diodes are PIN diodes, the positive and negative poles of the diodes are integrally connected and rotate around clockwise, and the positive and negative poles of the two opposite diodes are opposite in direction.
As a preferable technical scheme, the junction capacitance of the diode is smaller than 0.05pF, and the on-resistance is smaller than 10 ohms.
As a preferable technical scheme, the shape of the middle groove of the second metal structure is one of square, round, cross, ring or similar symmetrical shape, and the shape of the middle groove of the second metal structure is periodically arranged to form an aperture type grid structure.
As the preferable technical scheme, the shape of the middle slot of the second metal structure is cross-shaped, and the cross-shaped slot structure is printed at the center of the surface of the medium substrate.
As the preferable technical scheme, the manufacturing materials of the two side metal structures and the middle metal structure are copper materials.
As the preferable technical scheme, the two layers of dielectric substrates are made of substrate materials with dielectric constants between 2.0 and 4.0.
Compared with the prior art, the invention has the beneficial effects that:
(1) The Ku band high-protection energy selection surface can realize high-power protection of electronic equipment in a Ku band, and change the self impedance according to field intensity so as to realize the function of smoothly passing low-power signals and blocking high-power microwave signals from entering.
(2) The Ku band high-protection energy selection surface has higher shielding effectiveness on the premise of ensuring low insertion loss in a transmission passband.
(3) The Ku band high-protection energy selection surface has the characteristic of easy processing, and can be widely applied to the protection of communication equipment on high-power harmful signals, in particular to the protection of radomes.
Drawings
FIG. 1 is a structural side view of a Ku band high-protection energy selective surface of the present invention;
FIG. 2 is a structural top view of one side of a two-sided metal structure in a Ku band high-protection energy selective surface of the present invention;
FIG. 3 is a structural top view of an intermediate metal structure in a Ku band high-protection energy selective surface of the present invention;
FIG. 4 is a simulation result of the insertion loss of a Ku band high protective performance energy selection surface under low power signal incidence in accordance with the present invention;
FIG. 5 is a simulation result of the protective performance of a Ku band high protective performance energy selection surface under high power signal incidence;
FIG. 6 is an alternative shape of the other portions of the first metal structure of the Ku band high-protective energy selective surface of the present invention;
fig. 7 is an alternative shape of the other portion of the second metal structure of the Ku band high shielding energy selective surface of the present invention.
In the figure: 1. a top metal structure; 11. a first metal patch; 12. a diode; 2. a first layer of dielectric substrate; 3. an intermediate layer metal structure; 31. a second metal patch; 4. a second layer of dielectric substrate; 5. an underlying metal structure.
Detailed Description
The technical scheme of the invention is further described below with reference to the specific embodiments:
as shown in fig. 1, a Ku band high-protection energy selection surface sequentially comprises a top metal structure 1, a first layer of dielectric substrate 2, an intermediate metal structure 3, a second layer of dielectric substrate 4 and a bottom metal structure 5 from top to bottom, wherein in this embodiment, the materials and thicknesses of the first layer of dielectric substrate 2 and the second layer of dielectric substrate 4 are the same.
The top metal structure 1 and the bottom metal structure 5 are respectively printed on the upper layer of the first-layer dielectric substrate 2 and the lower layer of the second-layer dielectric substrate 4, and the middle metal structure 3 is printed in the middle of the first-layer dielectric substrate 2 and the second-layer dielectric substrate 4. The design of the top metal structure 1 and the bottom metal structure 5 is the same, the top metal structure 1 and the bottom metal structure 5 comprise four first metal patches 11, diodes 12 are loaded in gaps between two adjacent first metal patches 11, and the four first metal patches 11 are square patches with side lengths w. As shown in fig. 2, the gaps between the four first metal patches 11 are the same, the gaps are g, the four diodes 12 are PIN diodes 12 with switching functions, the whole connection of the positive and negative directions of the diodes 12 rotates clockwise, and the positive and negative directions of the two opposite diodes 12 are opposite. The overall structure of the energy selection surface is a square structure, the side length is p, and the length of the unit period of the energy selection surface structure is p. The length of the gap between two adjacent first metal patches 11 plus is slightly smaller than the length of the cell period.
As shown in fig. 3, the intermediate metal structure 3 is composed of a second metal patch 31 with a central slot, the shape of the second metal patch 31 is the same as the square structure of the energy selection surface, the central slot has a cross-shaped structure, and the length of the cross-shaped structure is l, and the width of the cross-shaped structure is s.
As shown in FIG. 1, the high-protection energy selection surface adopts Rogers-4350B as a material of the dielectric substrate, the dielectric constant is 3.66, the tangent loss angle is 0.0037, the thickness is 0.5 mm, and the thickness and the dielectric constant of the first layer dielectric substrate 2 and the second layer dielectric substrate 4 can be adjusted according to practical conditions. The length of the side of the first metal patch 11 in the top metal structure 1 and the bottom metal structure 5 can be adjusted according to practical situations. The side length of the second metal patch 31 slotted in the intermediate metal structure 3 can be adjusted according to practical situations, and the following table 1 is a specific implementation parameter of one embodiment:
table 1 Unit structural parameters (Unit: mm)
In this embodiment, the junction capacitance of all the diodes 12 in the off state is 0.04pF, and the on-resistance in the on state is 5Ω.
Fig. 4 and 5 show the transmission parameters of the high barrier energy selective surface of the present invention in different states, and it can be seen that the transmission coefficient is less than 1dB in the passband range from 14.2GHz to 17.2GHz, about 3GHz, at low power field strength incidence. At high power field intensity incidence, the signal passband is converted into stopband, the transmission coefficient is greater than 30dB in 12GHz to 18GHz, and greater than 40dB in 12GHz to 16.7 GHz. Therefore, the high-protection energy selection surface has good high-power protection performance.
As shown in fig. 6 and 7, the shapes of the intermediate slots of the first metal patch 11 and the second metal patch 31 of the intermediate metal structure 3 of the top metal structure 1 and the bottom metal structure 5 that can be used in other parts of the present invention are exemplified.
To further compare the advantages of the present approach, the performance parameters of reference 1 and reference 2 are further listed and used for comparison of the present approach, as shown in table 2 in particular:
TABLE 2
Compared with reference 1 and reference 2, the working frequency band of the invention is positioned in the Ku band, and the protection efficiency is more than 40dB in the passband range while the 1dB insertion loss reaches the passband range of 2.5GHz, so that the invention has good protection performance.
Reference [3] n.hu et al, "" Design of Ultrawideband Energy-Selective Surface for High-Power Microwave Protection, "in IEEE Antennas and Wireless Propagation Letters, vol.18, no.4, pp.669-673, april2019, doi: 10.1109/lawp.2019.2900760" (ultra wideband energy selective surface design for high power microwave protection, IEEE antenna & radio propagation flash, month 4, 4 th, volume 18, pages 669-673).
Reference [4]D.Qin,R.Ma,J.Su,X.Chen,R.Yang and W.Zhang, "Ultra-Wideband Strong Field Protection Device Based on Metasurface," in IEEE Transactions on Electromagnetic Compatibility, vol.62, no.6, pp.2842-2848, dec.2020, doi:10.1109/temc.2020.3020840 (Ultra-wideband high field protection device based on Ultra-surface, journal of IEEE electromagnetic compatibility, month 12, 6, volume 52, pages 669-673).
The present embodiment is further illustrative of the present invention and is not to be construed as limiting the invention, and those skilled in the art can make no inventive modifications to the present embodiment as required after reading the present specification, but only as long as they are within the scope of the claims of the present invention.
Claims (9)
1. The utility model provides a Ku wave band high protective performance energy selection surface, its characterized in that includes two-layer dielectric substrate, both sides metal structure and middle metal structure, and both sides metal structure prints respectively in the upper strata of first layer dielectric substrate and the lower floor of second floor dielectric substrate, middle metal structure prints in the centre of two-layer dielectric substrate, both sides metal structure respectively by four first metal paster with four diodes of loading between the first metal paster are constituteed, middle metal structure comprises middle grooved second metal paster.
2. The Ku band high protective energy selective surface of claim 1, wherein the first metallic patch has one of a square, circular, annular, or similar symmetrical shape.
3. The Ku band high protective energy selective surface of claim 2, wherein said first metallic patch is square in shape.
4. The Ku band high protective energy selective surface of claim 1, wherein the four diodes are PIN diodes, the integral connection of the positive and negative poles of the diodes rotates clockwise, and the positive and negative poles of the two opposite diodes are opposite.
5. The Ku band high protective energy selective surface of claim 1, wherein the diode has a junction capacitance of less than 0.05pF and an on-resistance of less than 10 ohms.
6. The Ku band high protective energy selective surface of claim 1, wherein the shape of the intermediate grooves of the second metal structure is one of square, circular, cross, ring or similar symmetrical shape, and the shape of the intermediate grooves of the second metal structure is periodically arranged to form an aperture type grid structure.
7. The Ku band high protective energy selective surface of claim 6, wherein the intermediate slot of the second metallic structure is cross-shaped, the cross-shaped slot structure being printed at the midpoint of the dielectric substrate surface.
8. The Ku band high protective energy selective surface of claim 1, wherein the two side metal structures and the middle metal structure are both made of copper material.
9. The Ku band high protective energy selective surface of claim 1, wherein both dielectric substrates are substrate materials having a dielectric constant between 2.0 and 4.0.
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| CN202311273520.5A CN117337017A (en) | 2023-09-28 | 2023-09-28 | Ku wave band high-protection energy selection surface |
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| CN202311273520.5A CN117337017A (en) | 2023-09-28 | 2023-09-28 | Ku wave band high-protection energy selection surface |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118017215A (en) * | 2024-04-09 | 2024-05-10 | 西南科技大学 | Circular polarization energy selection antenna and branch protection structure for Beidou navigation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118017215A (en) * | 2024-04-09 | 2024-05-10 | 西南科技大学 | Circular polarization energy selection antenna and branch protection structure for Beidou navigation |
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