CN115441204B - Ultra-wideband energy selection antenna - Google Patents
Ultra-wideband energy selection antenna Download PDFInfo
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- CN115441204B CN115441204B CN202211278504.0A CN202211278504A CN115441204B CN 115441204 B CN115441204 B CN 115441204B CN 202211278504 A CN202211278504 A CN 202211278504A CN 115441204 B CN115441204 B CN 115441204B
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- 230000000694 effects Effects 0.000 abstract description 18
- 230000005855 radiation Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 7
- 238000004088 simulation Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000003313 weakening effect Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/20—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements characterised by the operating wavebands
- H01Q5/25—Ultra-wideband [UWB] systems, e.g. multiple resonance systems; Pulse systems
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Abstract
The application belongs to the technical field of antennas, and relates to an ultra-wideband energy selection antenna, which comprises: the dielectric substrate, the first metal layer arranged at the top of the dielectric substrate and the second metal layer arranged at the bottom of the dielectric substrate; the first metal layer and the second metal layer form a rubbing antenna; the middle part of the first metal layer is provided with a linear first loading section, and the middle part of the second metal layer is provided with a linear second loading section; the first loading section is provided with a first flat cable, the second loading section is provided with a second flat cable corresponding to the first flat cable, and the second flat cable is positioned right below the corresponding first flat cable; a diode A is arranged on the first row line, a diode B corresponding to the diode A is arranged on the second row line, and the directions of the diode A and the diode B are opposite; one end of the first row line close to the diode A is electrically connected with one end of the corresponding second row line close to the diode B. The application can provide good ultra-wideband working performance and the protection effect of the whole frequency band.
Description
Technical Field
The application relates to the technical field of antennas, in particular to an ultra-wideband energy selection antenna.
Background
With the increasing threat of high intensity radiation fields, there is a great deal of attention from students how to achieve protection of electronic systems while maintaining their proper operation. The antenna is used as a front door of various radio frequency and microwave systems and is a main channel for converting an electromagnetic field in free space into a guided wave in a microwave circuit. High intensity radiation fields are incident through the front gate coupling, which is likely to produce surge voltages and currents, and thus the electronic systems associated with the antennas are extremely vulnerable to damage and even destruction.
The protection means for high-intensity radiation fields at present mainly comprise: an energy selection surface, a high power limiter and an energy selection antenna.
However, the protection means in the prior art are very limited in the working frequency band, and most of the protection means are concentrated in one band, the bandwidth is only about 0.1GHz, and the protection requirement of the high-frequency band multi-frequency band electronic system cannot be met.
Disclosure of Invention
Based on this, it is necessary to provide an ultra-wideband energy selection antenna aiming at the technical problems, which can provide good working performance in the ultra-wideband range and realize good protection effect in the whole frequency range on the basis.
An ultra-wideband energy selective antenna, comprising: the dielectric substrate, the first metal layer arranged at the top of the dielectric substrate and the second metal layer arranged at the bottom of the dielectric substrate;
The first metal layer and the second metal layer form a pair of rubbing antennas;
The middle part of the first metal layer is provided with a linear first loading section, and the middle part of the second metal layer is provided with a linear second loading section;
The first loading section is provided with a first flat cable, the second loading section is provided with a second flat cable corresponding to the first flat cable, and the second flat cable is positioned right below the corresponding first flat cable;
A diode A is arranged on the first row, a diode B corresponding to the diode A is arranged on the second row, and the direction of the diode A is opposite to that of the diode B;
One end of the first row line close to the diode A is electrically connected with one end of the second row line close to the diode B.
In one embodiment, the first flat cable is vertically bisected about a vertical centerline of the antenna;
and two diodes A with opposite directions are symmetrically arranged on the first row line.
In one embodiment, when the number of the first flat cables is more than 3, the distances between two adjacent first flat cables are equal.
In one embodiment, the number of the first flat cables is 4 to 8.
In one embodiment, the portion of the first loading section that coincides with the second loading section forms a transition structure;
the length of the first flat cable is less than or equal to five times of the width of the transition structure.
In one embodiment, the width of the first flat cable ranges from 0.15mm to 1mm.
In one embodiment, the portion of the second loading section corresponding to the transition structure is a second transition section;
The second metal layer includes: a second balun, the top of which is connected with the bottom of the second transition section;
The second balun is of a rectangular structure, and symmetrical arc-shaped cutting grooves are formed in the position, close to the second transition section, of the second balun.
In one embodiment, the center of the arc-shaped slot is arranged at the edge of the medium substrate and at a position which is consistent with the height of the bottom of the second transition section, and the radius of the arc-shaped slot is 20 to 25 times of the width of the transition structure.
In one embodiment, the portion of the first loading section corresponding to the transition structure is a first transition section;
the first metal layer includes: a first balun, the top of which is connected with the bottom of the first transition section;
The first balun is of a tower structure.
In one embodiment, through holes vertically penetrating through the dielectric substrate are formed in positions, corresponding to two ends of the first flat cable and not overlapping with the first metal layer, on the dielectric substrate, and metal layers are arranged on the hole walls.
According to the ultra-wideband energy selection antenna, the linear first loading section and the linear second loading section are arranged on the opposite-rubbing antenna to form a weak electric field, the first flat cable and the second flat cable are respectively arranged on the first loading section and the second loading section, the diode A and the diode B are respectively arranged on the first flat cable and the second flat cable, and the characteristic that the diode is disconnected when normal electromagnetic wave signals are incident and is conducted when high-intensity electromagnetic wave signals are incident is utilized, so that the ultra-wideband protection effect of the antenna is realized, and meanwhile, the influence on the performance of the original antenna is weakened; according to the application, the diode is arranged in 10000-20000v/m relatively weak electric field formed by the linear first loading section and the linear second loading section, so that the influence of parasitic parameters caused by diode loading on high-frequency performance is avoided to a great extent, and the deterioration of matching effect is avoided, thereby realizing the ultra-wideband (4-16 GHz, C frequency band, X frequency band and Ku frequency band) protection effect on the basis of not weakening the original antenna performance.
Drawings
FIG. 1 is a schematic perspective view of an ultra wideband energy selective antenna in one embodiment;
FIG. 2 is a detailed schematic diagram of an ultra wideband energy selective antenna in one embodiment;
FIG. 3 is a detailed schematic diagram of an ultra wideband energy selective antenna in one embodiment;
FIG. 4 is a diagram of an equivalent circuit model of an ultra wideband energy selective antenna in one embodiment;
FIG. 5 is a graph of gain and shielding effectiveness of an ultra wideband energy selective antenna in one embodiment in both an active and a protected state;
FIG. 6 is a graph of the reflection coefficient of an ultra wideband energy selective antenna in one embodiment in both normal operation and protection conditions;
Fig. 7 is an E-plane and H-plane directional diagram of the ultra wideband energy selective antenna at a frequency of 4GHz in one embodiment, fig. 7 (a) is an E-plane, and fig. 7 (b) is an H-plane;
Fig. 8 is an E-plane and H-plane directional diagram of the ultra wideband energy selective antenna at 8GHz frequency in one embodiment, fig. 8 (a) being the E-plane and fig. 8 (b) being the H-plane;
Fig. 9 is an E-plane and H-plane directional diagram of the ultra wideband energy selective antenna at a frequency of 12GHz in one embodiment, fig. 9 (a) being the E-plane and fig. 9 (b) being the H-plane;
fig. 10 is an E-plane and H-plane directional diagram of the ultra wideband energy selective antenna at a frequency of 16GHz in one embodiment, fig. 10 (a) is an E-plane, and fig. 10 (b) is an H-plane.
Reference numerals:
1a first metal layer, 11 a first radiation structure, 12a first transition section, 13 a first balun, 14 a first flat cable and 15 a diode A;
2a second metal layer, 21 a second radiation structure, 22 a second transition section, 23 a second balun, 24 a second flat cable, 25 a diode B;
3, a dielectric substrate, 31 a feed port and 32 metal via holes;
x length direction, y width direction, z height direction.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present application are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.
Furthermore, descriptions such as those referred to as "first," "second," and the like, are provided for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implying an order of magnitude of the indicated technical features in the present disclosure. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, "plurality of sets" means at least two sets, for example, two sets, three sets, etc., unless specifically defined otherwise.
In the present application, unless specifically stated and limited otherwise, the terms "connected," "affixed," and the like are to be construed broadly, and for example, "affixed" may be a fixed connection, a removable connection, or an integral body; the device can be mechanically connected, electrically connected, physically connected or wirelessly connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In addition, the technical solutions of the embodiments of the present application may be combined with each other, but it is necessary to be based on the fact that those skilled in the art can implement the technical solutions, and when the technical solutions are contradictory or cannot be implemented, the combination of the technical solutions should be considered as not existing, and not falling within the scope of protection claimed by the present application.
The present application provides an ultra wideband energy selective antenna, as shown in fig. 1-3, comprising, in one embodiment: a dielectric substrate 3, a first metal layer 1 arranged on the top of the dielectric substrate 3, and a second metal layer 2 arranged on the bottom of the dielectric substrate 3.
It is necessary to explain that: the dielectric substrate is generally a rectangular plate-shaped structure, specifically, F4BK225 may be selected, where the direction in which the center of the feed port is located is the length direction x (vertical direction) of the antenna, the direction in which the section of the feed port is located is the width direction y of the antenna, and the thickness direction of the plate-shaped structure is the height direction z of the antenna.
The first metal layer 1 includes: the first radiating structure 11, the first transition section 12 and the first balun 13 which are connected in sequence, that is, the top of the first transition section 12 is connected with the bottom of the first radiating structure 11, and the bottom of the first transition section 12 is connected with the top of the first balun 13; the second metal layer 2 includes: the second radiating structure 21, the second transition 22 and the second balun 23 are connected in sequence, that is, the top of the second transition 22 is connected to the bottom of the second radiating structure 21 and the bottom of the second transition 22 is connected to the top of the second balun 23.
The first radiating structure 11 and the second radiating structure 21 are identical in size and shape but opposite in direction, the first transition section 12 and the second transition section 22 are overlapped in the vertical direction, and the first balun 13 and the second balun 23 are in axisymmetric structures with respect to the vertical center line of the antenna, so that the first metal layer 1 and the second metal layer 2 form a pair of paired antennas.
The present application is not limited to the specific shape and size of the first radiation structure 11 and the second radiation structure 21, and may be specifically designed according to practical situations or may be constructed in the prior art.
The first transition section 12 and the second transition section 22 are rectangular structures along the length of the antenna.
The bottom of the first balun 13 and the bottom of the second balun 23 are both connected to a feed port 31, wherein the feed port 31 may use SMA joints, the first balun 13 being connected to an inner conductor of the SMA joint and the second balun 23 being connected to an outer conductor of the SMA joint.
The middle part of the first metal layer 1 is provided with a linear first loading section, and the middle part of the second metal layer 2 is provided with a linear second loading section. The first loading section and the second loading section are both arranged along the length direction of the antenna, specifically, the bottom of the first radiation structure 11, the first transition section 12 and the top of the first balun 13 form a linear first loading section, and the bottom of the second radiation structure 21, the second transition section 22 and the top of the second balun 23 form a linear second loading section.
The first loading section is provided with a first flat cable 14, the second loading section is provided with a second flat cable 24 corresponding to the first flat cable 14, and the second flat cable 24 is located right below the corresponding first flat cable 14.
The first flat cable 14 is provided with a diode a, the second flat cable 24 is provided with a diode B corresponding to the diode a, and the direction of the diode a is opposite to that of the diode B.
It should be noted that the positions, shapes, sizes, and diodes (including the number of diodes and the positions of the diodes) of the first flat cable 14 and the second flat cable 24 are all in one-to-one correspondence. The diode A is arranged at a position which is not overlapped with the first metal layer on the first row line, and the diode B is arranged at a position which is not overlapped with the second metal layer on the second row line.
One end of the first row line close to the diode A is electrically connected with one end of the corresponding second row line close to the diode B.
Preferably, through holes vertically penetrating through the dielectric substrate are arranged at positions, corresponding to the two ends of the first flat cable and not overlapped with the first metal layer, on the dielectric substrate, and metal layers are arranged on the hole walls so as to form metal through holes 32.
The working process of the embodiment is as follows: when normal electromagnetic wave signals are incident into the antenna, the diode A is in a disconnection state and is equivalent to a small capacitor connected in parallel, the energy selection antenna is matched with free space impedance, the antenna impedance is not affected, so that signals can be normally received, the received signals enter the first metal layer through the feed port, reach the first radiation structure along the first loading section and are diffused into surrounding air, and the antenna realizes normal operation; when the electromagnetic wave signal of the high-intensity radiation field is incident to the antenna, the diode A is in a conducting state, which is equivalent to a small parallel resistor, the impedance of the energy selection antenna is mismatched with the impedance of the free space, the impedance of the antenna is suddenly reduced to be zero, the received signal enters the first metal layer from the feed port, reaches the diode A along the first loading section, passes through the diode A and the diode B, and returns to the feed port along the second loading section, so that the high-intensity radiation field is reflected, only few signals reach the first radiation structure along the first loading section and are diffused into the surrounding air, and the antenna achieves the protection function.
According to the ultra-wideband energy selection antenna, the linear first loading section and the linear second loading section are arranged on the opposite-rubbing antenna, a weak electric field is formed, the first flat cable and the second flat cable are respectively arranged on the first loading section and the second loading section, the diode A and the diode B are respectively arranged on the first flat cable and the second flat cable, the characteristic that the diode is disconnected when normal electromagnetic wave signals are incident and is conducted when high-intensity electromagnetic wave signals are incident is utilized, the working state of the ultra-wideband energy selection antenna can be adaptively changed according to the change of electromagnetic environment, normal signals can be transmitted through the antenna without obstruction, the high-intensity radiation field cannot enter an electronic system through the antenna, and therefore the ultra-wideband protection effect of the antenna is achieved, the protection frequency band is expanded, the protection capability is improved, strong electromagnetic pulses with frequencies in a passband are effectively protected, meanwhile, the influence on the performance of the original antenna is reduced, the extra insertion loss caused by diode integration is reduced, the ultra-wideband radiation performance of the antenna is maintained, and the potential of in-situ replacement of the ultra-wideband antenna without the capability is realized; according to the application, the diode is arranged in a 10000-20000v/m relatively weak electric field formed by the linear first loading section and the linear second loading section, so that the influence of parasitic parameters caused by diode loading on high-frequency performance is avoided to a great extent, and the deterioration of matching effect is avoided, thereby realizing the ultra-wideband (4-16 GHz, the working frequency band covers C frequency band, X frequency band and Ku frequency band) protection effect on the basis of not weakening the original antenna performance, and expanding the application scene of the antenna. In addition, the application integrates the high-intensity radiation field protection function into the antenna design, thereby effectively reducing the cost and the size, having high design flexibility and extremely low performance influence, and simultaneously increasing the whole equivalent capacitance due to the influence of capacitance parameters brought by the loading diode, so that the inductance reaching the original resonance effect is reduced, and the loading diode can further reduce the size of the antenna, further miniaturize the antenna and further reduce the cost and the protection cost of the antenna.
Preferably, the first flat cable 14 is perpendicularly bisected about the vertical centerline of the antenna; the first flat cable 14 is symmetrically provided with two diodes a with opposite directions. That is, the first flat cable 14 and the two diodes a on the first flat cable 14 are both symmetrical about the vertical center line of the antenna, and the second flat cable 24 and the two diodes B on the second flat cable 24 are both symmetrical about the vertical center line of the antenna. It should be noted that the direction of the diode a located on the same side as the vertical center line of the antenna is the same, and the direction of the diode B located on the same side as the vertical center line of the antenna is also the same.
The arrangement can lead the current on the first loading section and the second loading section to be evenly distributed, thereby weakening the influence on the performance of the original antenna.
Further preferably, when the number of the first flat cables 14 is more than 3, the distances between two adjacent first flat cables are equal, and correspondingly, the number of the second flat cables 24 is more than 3, and the distances between two adjacent second flat cables are equal, so that the currents on the first loading section and the second loading section are further uniformly distributed, the influence on the performance of the original antenna is further weakened, the influence of parasitic parameters introduced due to the loading of the diode on the ultra-wideband is avoided, and the protection effect of the ultra-wideband is further enhanced.
In one embodiment, the number of the first flat cables 14 is 4 to 8, that is, the number of the second flat cables 24 is also 4 to 8, and the number of the diodes a and the number of the diodes B are 4 to 8 pairs.
The arrangement can ensure the antenna performance when normal electromagnetic wave signals are incident and ensure the protection effect when high-intensity electromagnetic wave signals are incident.
In one embodiment, the portion of the first loading section that coincides with the second loading section forms a transition structure; the length of the first flat cable 14 is less than or equal to five times the width of the transition structure, and the second flat cable 24 is equal to the length of the first flat cable 14.
The arrangement can enhance the directivity of the antenna pattern, ensure good reflection coefficient and realize the protection effect that the total frequency band (C frequency band, X frequency band and Ku frequency band) is more than 15 dB.
In one embodiment, the width of the first flat cable 14 is in the range of 0.15mm to 1mm, and the width of the second flat cable 24 is equal to the width of the first flat cable 14, with the direction of the first flat cable along the vertical center line of the antenna being the width direction of the first flat cable.
The arrangement can bring relatively large inductance to the circuit, so that the requirement on the diode capacitance is reduced, and the compatibility of the whole frequency band protection performance and the normal working performance is easier to realize. Meanwhile, according to the existing PCB processing precision, the size of the PCB cannot be reduced in an infinite way, and an excessively wide flat cable can form unnecessary resonance with the original parameters of the diode, so that the bandwidth is reduced, the protection effect is also deteriorated, and the working performance and the protection performance can be further improved by the arrangement of the application.
In one embodiment, the portion of the first loading section corresponding to the transition structure is the first transition section 12; the first balun 13 is a tower structure. Specifically, the first balun is a graded balun impedance matching tuner and comprises a plurality of metal patches of rectangular structures, each rectangular patch is connected end to end in sequence in a linear structure along the length direction of the antenna, the rectangular patch close to the feed port is used as the front, the width direction of the antenna is used as the width direction of the rectangular patch, and the width of the front rectangular patch is larger than that of the adjacent rear rectangular patch.
The portion of the second loading section corresponding to the transition structure is a second transition section 22; the second balun 23 has a rectangular structure, and symmetrical arc-shaped cutting grooves are arranged on the second balun at positions close to the second transition section.
The arrangement ensures the linear structure of the second loading section, so that the loading of the second flat cable and the diode B is possible, and simultaneously, the equivalent inductance and capacitance parameters brought by the loading of the flat cable can be combined with a narrow structure, the effect of the equivalent inductance and capacitance parameters is equivalent to that of the balun with the existing wide structure, thereby realizing the protection effect of the ultra-wideband of the antenna, the whole energy selection antenna realizes the ultra-wideband during normal operation, and meanwhile, the narrow balun provides more possibility for loading the diode, and the protection effect in the whole frequency band effect is increased.
Preferably, the circle center of the arc-shaped cutting groove is arranged at the edge of the medium substrate and at the position which is consistent with the height of the bottom of the second transition section, and the radius of the arc-shaped cutting groove is 20 to 25 times of the width of the transition structure.
The arrangement ensures that the antenna can meet the ultra-wideband performance of 4-16GHz when normal electromagnetic wave signals are incident, and also ensures that the antenna can meet the protection effect of a full frequency band (C frequency band, X frequency band and Ku frequency band) of more than 15dB when high-intensity electromagnetic wave signals are incident, and has the advantages of multiple application backgrounds and wide application range; with the development of technology, if the diode performance, the first flat cable and the second flat cable can break through the limitation of the prior art, the ultra-wideband protection range can be expanded to the range of 0-30 GHz.
As shown in fig. 4, in order to deeply study the working mechanism of the ultra-wideband energy selection antenna, an equivalent circuit model is provided in the application. Wherein Z r is the equivalent impedance of the antenna when no diode is introduced, the introduced diode is equivalent to a diode connected in parallel with the antenna, and the two diodes are combined into the energy selection antenna. When a normal signal is incident, the diode is in a disconnected state and can be equivalently a small parallel capacitor C off, and at the moment, the energy selection antenna is matched with the free space impedance so as to be capable of normally receiving the signal; when the high-intensity radiation field is incident, the diode is conducted and can be equivalently connected with a small resistor R on in parallel, and the energy selection antenna is mismatched with the free space impedance so as to reflect the high-intensity radiation field.
As shown in fig. 5, gain simulation was performed on the ultra wideband energy selective antenna of the present application. The arrow in the figure indicates the ordinate. The simulation proves that the ultra-wideband energy selection antenna can obviously inhibit the gain of the ultra-wideband energy selection antenna under the irradiation of a high-intensity radiation field in the ultra-wideband (C band, X band and Ka band) range, thereby realizing a good protection function.
As shown in fig. 6, S-parameter simulation was performed on the ultra-wideband energy selective antenna of the present application. When the ultra-wideband energy selection antenna works normally, the reflection coefficient is always smaller than-14 dB in the C wave band, the X wave band and the Ka wave band, which indicates that the standing wave ratio characteristic of the ultra-wideband energy selection antenna is good, and the normal working requirement can be well met; when the ultra-wideband energy selective antenna is in a protection state, the reflection coefficient of the antenna in the whole frequency band tends to be 0dB, namely, a high-intensity radiation field is reflected. The simulation proves that the design can realize effective protection of a high-intensity radiation field in an ultra-wide frequency range (C wave band, X wave band and Ka wave band), and can ensure that the normal performance of the antenna is not influenced.
As shown in fig. 7 to 10, pattern simulation is performed on the ultra wideband energy selective antenna of the present application. In the figure, the solid line represents the pattern of the antenna in the normal working state, and the broken line represents the pattern in the protection state. From the simulation results shown in the figure, it can be found that the pattern gain of the ultra-wideband energy selection antenna is obviously reduced when the high-intensity electromagnetic radiation field is incident, so that the high-intensity electromagnetic radiation protection function is realized.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the application and are described in detail herein without thereby limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (10)
1. An ultra-wideband energy selective antenna, comprising: the dielectric substrate, the first metal layer arranged at the top of the dielectric substrate and the second metal layer arranged at the bottom of the dielectric substrate;
The first metal layer and the second metal layer form a pair of rubbing antennas;
The middle part of the first metal layer is provided with a linear first loading section, and the middle part of the second metal layer is provided with a linear second loading section;
The first loading section is provided with a first flat cable, the second loading section is provided with a second flat cable corresponding to the first flat cable, and the second flat cable is positioned right below the corresponding first flat cable;
A diode A is arranged on the first row, a diode B corresponding to the diode A is arranged on the second row, and the direction of the diode A is opposite to that of the diode B;
One end of the first row line close to the diode A is electrically connected with one end of the second row line close to the diode B.
2. The ultra-wideband energy selective antenna of claim 1, wherein the first flat cable is vertically bisected about a vertical centerline of the antenna;
and two diodes A with opposite directions are symmetrically arranged on the first row line.
3. The ultra-wideband energy selective antenna of claim 2, wherein when the number of first flat wires is 3 or more, the distances between adjacent two first flat wires are equal.
4. The ultra-wideband energy selective antenna of claim 3, wherein the number of first flat wires is 4 to 8.
5. The ultra-wideband energy selective antenna of any one of claims 1 to 4, wherein a portion of the first loading section that coincides with the second loading section forms a transition structure;
the length of the first flat cable is less than or equal to five times of the width of the transition structure.
6. The ultra-wideband energy selective antenna of any one of claims 1 to 4, wherein the width of the first flat wire ranges from 0.15mm to 1mm.
7. The ultra-wideband energy selective antenna of claim 5, wherein the portion of the second loading section corresponding to the transition structure is a second transition section;
The second metal layer includes: a second balun, the top of which is connected with the bottom of the second transition section;
The second balun is of a rectangular structure, and symmetrical arc-shaped cutting grooves are formed in the position, close to the second transition section, of the second balun.
8. The ultra-wideband energy selective antenna of claim 7, wherein a center of the arc-shaped slot is disposed at a position at the edge of the dielectric substrate and at a height consistent with the bottom of the second transition section, and a radius of the arc-shaped slot is 20 to 25 times a width of the transition structure.
9. The ultra-wideband energy selective antenna of claim 5, wherein the portion of the first loading section corresponding to the transition structure is a first transition section;
the first metal layer includes: a first balun, the top of which is connected with the bottom of the first transition section;
The first balun is of a tower structure.
10. The ultra-wideband energy selecting antenna of any one of claims 2 to 4, wherein the dielectric substrate has a through hole vertically penetrating the dielectric substrate at a position corresponding to both ends of the first flat cable and not overlapping with the first metal layer, and a metal layer is provided on a wall of the through hole.
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|---|---|---|---|---|
| CN111370860A (en) * | 2020-03-10 | 2020-07-03 | 电子科技大学 | Strong coupling ultra wide band phased array antenna based on interdigital resistive surface loading |
| WO2022021824A1 (en) * | 2020-07-27 | 2022-02-03 | 摩比天线技术（深圳）有限公司 | Low-frequency radiation unit and base station antenna |
| CN114976665A (en) * | 2022-06-27 | 2022-08-30 | 东莞理工学院 | Broadband dual-polarized dipole antenna loaded with stable frequency selective surface radiation |
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| CN111370860A (en) * | 2020-03-10 | 2020-07-03 | 电子科技大学 | Strong coupling ultra wide band phased array antenna based on interdigital resistive surface loading |
| WO2022021824A1 (en) * | 2020-07-27 | 2022-02-03 | 摩比天线技术（深圳）有限公司 | Low-frequency radiation unit and base station antenna |
| CN114976665A (en) * | 2022-06-27 | 2022-08-30 | 东莞理工学院 | Broadband dual-polarized dipole antenna loaded with stable frequency selective surface radiation |
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