CN116613547B - Dual-frequency common-aperture antenna with high aperture multiplexing rate and high port isolation - Google Patents
Dual-frequency common-aperture antenna with high aperture multiplexing rate and high port isolation Download PDFInfo
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- 230000005855 radiation Effects 0.000 claims description 48
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/30—Combinations of separate antenna units operating in different wavebands and connected to a common feeder system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
- H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0053—Selective devices used as spatial filter or angular sidelobe filter
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
- H01Q19/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
- H01Q19/10—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces
- H01Q19/104—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces using a substantially flat reflector for deflecting the radiated beam, e.g. periscopic antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/0006—Particular feeding systems
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention relates to a dual-frequency common-aperture antenna with high aperture multiplexing rate and high port isolation, which belongs to the technical field of microwave devices, and is provided with a dielectric layer, a metal supporting structure, a nonmetal supporting structure and a semisteel cable, wherein the dual-frequency common-aperture antenna has a size comparable with that of a high-frequency antenna through slotting and loading lumped parameter resistors in a low-frequency antenna; the low-frequency antenna and the high-frequency antenna are stacked, so that the aperture multiplexing efficiency of 100% is realized; the combination of the branch loading resonator and the defected ground technology in the low-frequency antenna feed branch greatly reduces the out-of-band emission in the working frequency band of the high-frequency antenna; a T-shaped resonator is loaded on a feed branch of a high-frequency antenna, so that a working frequency point of the low-frequency antenna generates null, and the isolation between the low-frequency antenna and the high-frequency antenna is greatly improved.
Description
Technical Field
The invention relates to the technical field of microwave devices, in particular to a dual-frequency common-aperture antenna with high aperture multiplexing rate and high port isolation.
Background
With the development of advanced high-speed flight platforms to multifunctional, the number of antennas installed on the platforms is increasing, and the space available for antenna deployment is more and more limited. This trend has led to a great need for the use of a common aperture antenna, which is a compact antenna design in which a plurality of antenna elements, each serving a different frequency band or polarization, share part or the entire aperture. They can support multiple frequencies or polarizations, thereby increasing bandwidth and communication flexibility. Common aperture antennas find wide application in satellite communications, radar systems and base stations.
Currently, related studies place multiple antennas, which were originally separate, in the same antenna aperture to form a common aperture antenna, but the suppression of coupling between antennas has placed higher demands. In the prior art, decoupling structures such as parasitic patches, defective grounds, neutralization lines, decoupling networks, etc. are used to suppress coupling between antennas placed in close proximity, however, the performance of most decoupling structures is greatly affected by the relative positions and spacing of the antennas, and furthermore, the decoupling structures require additional space.
In recent years, chinese patent CN113809518A is a high-isolation microwave and millimeter wave large-frequency ratio common-caliber antenna, which uses the same radiation structure to radiate millimeter wave and microwave signals, improves aperture utilization rate and realizes miniaturization of the common-caliber antenna; the dual-frequency common-caliber array antenna of the Chinese patent CN107689490B uses the substrate integrated waveguide transmission part of the Ku frequency band substrate integrated waveguide loaded with the diphole antenna to form the antenna of the Ku frequency band, also serves as the wall of the Ka frequency band rectangular metal waveguide, realizes caliber multiplexing and reduces mutual coupling among the antennas. However, the current technology cannot realize the size comparable to the low frequency antenna and the high frequency antenna and the isolation between the low frequency antenna and the high frequency antenna.
Therefore, it is necessary to provide a dual-frequency common-aperture antenna with high aperture multiplexing rate and high isolation.
Disclosure of Invention
In view of the above problems, the present invention provides a dual-band common-aperture antenna with high aperture multiplexing rate and high port isolation, which is realized to have a size comparable to that of a high-frequency antenna by slotting in a low-frequency antenna and loading lumped parameter resistors; the low-frequency antenna and the high-frequency antenna are stacked, so that extremely high aperture multiplexing efficiency is realized; the combination of the branch loading resonator and the defected ground technology in the low-frequency antenna feed branch greatly reduces the out-of-band emission in the working frequency band of the high-frequency antenna; a T-shaped resonator is loaded on a feed branch of a high-frequency antenna, so that a working frequency point of the low-frequency antenna generates null, and the isolation between the low-frequency antenna and the high-frequency antenna is greatly improved.
The invention provides a dual-frequency common-aperture antenna with high aperture multiplexing rate and high port isolation, which comprises the following components:
the dual-frequency common aperture antenna comprises: the cable comprises a dielectric layer, a metal supporting structure, a nonmetal supporting structure and a semisteel cable; the dielectric layer comprises: a first layer of medium, a second layer of medium, a third layer of medium and a fourth layer of medium; two ends of the semi-rigid cable are respectively connected with the third layer medium and the fourth layer medium; the first, second, third and fourth dielectric layers are stacked based on the nonmetallic support structure, and are respectively placed from top to bottom as shown in fig. 1.
Preferably, the dielectric constants of the first, second, third and fourth dielectric layers are 1-20, and the loss tangent is 0.0001-0.02; the thickness of the dielectric layer is 0.6-1.0mm.
Further, the dielectric constants of the first, second, third and fourth dielectric layers are all 4.5, and the loss tangent is Fr-4 of 0.02; the thickness of the dielectric layer was 0.8mm.
The first layer of medium comprises a first layer of medium substrate and a parasitic metal patch of the high-frequency antenna; the parasitic metal patch of the high-frequency antenna is arranged above the first layer of dielectric substrate and is of a circular structure, as shown in fig. 3; the first layer of medium is of a square structure and is provided with a plurality of through holes; the plurality of through holes comprise a first layer of medium first hole and a first medium layer second hole which are respectively aligned on two sides of the first layer of medium; as shown in fig. 2;
wherein Ht is the distance between the first layer of medium and the fourth layer of medium; hp is the distance between the first layer of medium and the second layer of medium; hh is the spacing between the second layer of media and the third layer of media; hl is the distance between the third layer of medium and the fourth layer of medium; ls is the square side length of the first layer of medium; rp is the diameter of the circular parasitic patch arranged above the first layer of medium;
preferably, the size ratio of the distance Ht between the first layer of medium and the fourth layer of medium, the distance Hp between the first layer of medium and the second layer of medium, the distance Hh between the second layer of medium and the third layer of medium, and the distance Hl between the third layer of medium and the fourth layer of medium is:
further, the ratio of the distance Ht between the first layer medium and the fourth layer medium, the distance Hp between the first layer medium and the second layer medium, the distance Hh between the second layer medium and the third layer medium, and the distance Hl between the third layer medium and the fourth layer medium is Ht to Hh to hl=27 to 3 to 12 to 10; the size ratio of the square side length Ls of the first layer of medium to the diameter Rp of the circular parasitic patch arranged above the first layer of medium is ls:Rp=30:7.
According to the technical scheme, the parasitic circular patch structure of the high-frequency antenna is arranged above the first layer of medium, so that the gain of the high-frequency antenna is improved.
The second layer medium includes: the second layer of dielectric substrate, the first metal radiation patch and the second metal radiation patch of the high-frequency antenna, the feed patch and the T-shaped resonance branch; the first metal radiation patch, the second metal radiation patch and the feed patch of the high-frequency antenna are arranged above the second dielectric substrate, and the feed patch is connected with the T-shaped resonance branch, as shown in fig. 5; the first metal radiation patch, the second metal radiation patch and the feed patch of the high-frequency antenna are arranged below the second dielectric substrate, and the feed patch is connected with the T-shaped resonance branch, as shown in fig. 6;
one end of the feed patch is connected with one end of the first high-frequency antenna metal radiation patch, as shown in fig. 5-6; the second layer of medium is of an octagonal structure and is provided with a plurality of through holes; the plurality of through holes comprise a second layer of medium first holes and second medium layer second holes which are aligned on two sides of the second layer of medium, as shown in fig. 4.
Wherein Lh is the straight edge length of the second layer of medium; wt (Wt) 1 Is the width of the first section of patch on the T-shaped resonance branch, wt 2 Is the width Wt of the second section patch on the T-shaped resonance branch 3 The widths of the third section of patches on the T-shaped resonance branches are respectively; lt (Lt) 1 Is the length of the first section of patch on the T-shaped resonance branch, lt 2 Length Lt of second section patch on T-shaped resonance branch 3 The length of the third section of patch on the T-shaped resonance branch; l (L) 1 Feeding a first section of the feed patch, a line length; w (w) 1 The width of the first section of feeder line is the feeder patch; l (L) 2 The length of the second section of feeder line that is the feeder patch; w (w) 2 The width of the third section of feeder line;
preferably, the width Wt of the first patch on the T-shaped resonance branch 1 Second section patch on T-shaped resonance branchWidth Wt 2 And the width Wt of the third section of patch on the T-shaped resonance branch 3 The ratio is Wt 1 ：Wt 2 ：Wt 3 ＝0.1:0.2:5；
Length Lt of first section patch on T-shaped resonance branch 1 Length Lt of second-segment patch on T-shaped resonance branch 2 And is the length Lt of the third section patch on the T-shaped resonance branch 3 Is at a ratio of Lt 1 ：Lt 2 ：Lt 3 ＝1:1:1；
First section feeder length of feeder patch 1 Length of second section feeder of feeding patch 2 The ratio is l 1 ：l 2 =18.9:12; width w of first section of feed line of feed patch 1 Width w of third section feeder 2 The ratio is w 1 ：w 2 ＝1.5：0.4。
Preferably, the edges of the first and second metal radiation patches of the high-frequency antenna are fitted by adopting a third-order Bezier curve, the center of a medium is used as an origin, and the expression of a curve equation is as follows:
P(t)＝A·(1-t) 3 +B·(1-t) 2 ·t+C·(1-t)·t 2 +D·t 3 ,t＝0…1
wherein, the point A is the first control point of the curve, and the coordinates are: (x) 1 ，y 1 ) X and y are coordinate points; the point B is a second control point of the curve, and the coordinates are: (x) 2 ，y 2 ) The method comprises the steps of carrying out a first treatment on the surface of the The point C is the third control point of the curve, and the coordinates are: (x) 3 ，y 3 ) The method comprises the steps of carrying out a first treatment on the surface of the The point D is the fourth control point of the curve, and the coordinates are: (x) 4 ，y 4 ) The method comprises the steps of carrying out a first treatment on the surface of the P is the position of the edge of the curve; t is a variable in the range of 0-1, and by varying the value of t, a curve is obtained.
According to the technical scheme, the radiation patch of the high-frequency antenna and the feed patch loaded with the T-shaped resonance branch are respectively arranged on the upper surface and the lower surface of the second layer of medium, so that the band-stop response is introduced.
The third layer medium comprises a third layer medium substrate and a low-frequency antenna radiation patch, the low-frequency antenna radiation patch is arranged below the third layer medium substrate, and the low-frequency antenna radiation patch is simultaneously used as a reflector of the high-frequency antenna; the low frequency antenna radiation patch is provided with a plurality of notches, the notches comprise: the antenna comprises a first notch, a second notch and a third notch, wherein the first notch is arranged in the middle of the low-frequency antenna radiation patch, and the second notch and the third notch are symmetrically arranged on two sides of the low-frequency antenna radiation patch;
the first notch is provided with a low-frequency feed part, and the low-frequency feed part is a feed part of a low-frequency folded dipole antenna; the second notch and the third notch are respectively provided with resistors, the resistors are lumped parameter resistors, and the number of the resistors is four, as shown in fig. 7; the low-frequency antenna is a folded dipole antenna working in the UHF frequency band; the third layer medium is of a square structure and is provided with a plurality of through holes; the plurality of through holes comprise a third layer medium first hole and a third medium layer second hole which are aligned on two sides of the third layer medium.
Wherein g 1 The width of the slot is formed in the middle part of the patch structure arranged below the third-layer dielectric substrate; g 2 The width of the grooves on two sides of the patch structure arranged below the third layer of medium substrate is the width of the grooves on two sides of the patch structure; d, d 2 The space between the slotting of the middle part and the slotting of the two sides of the patch structure is arranged below the third layer of medium substrate;
further, the width g of the slot of the middle part of the patch structure arranged below the third layer of dielectric substrate 1 Width g of the slot on two sides of the patch structure 2 Is in g ratio 1 ：g 2 ＝1:2。
In the technical scheme, the feed part of the low-frequency folded dipole antenna is arranged in the middle of the radiation patch above the third dielectric layer through the slots, the miniaturized design is realized on the left side and the right side through the slots, and meanwhile, four lumped parameter resistors are loaded on the edges of the slots on the two sides, so that the smaller low-frequency antenna can be designed.
The fourth layer medium includes: a fourth dielectric substrate, a metal ground of the low-frequency antenna and a feed structure of the low-frequency antenna; the metal ground of the low-frequency antenna is arranged above the fourth-layer dielectric substrate, and the feed structure of the low-frequency antenna is arranged below the fourth-layer dielectric substrate; the feed structure of the low-frequency antenna is a low-pass filter feed structure, and open branch node lines are loaded on the feed structure, as shown in fig. 11; the metal ground of the low-frequency antenna is that a metal sheet is arranged on the grounding surface of the low-frequency antenna, and the metal sheet is connected with the grounding surface of the feed connector;
the metal ground of the low-frequency antenna is provided with an I-shaped notch which is of a defective metal ground structure and has the function of a low-pass filter, as shown in fig. 10; the I-shaped notch is a dumbbell-shaped notch; the low-frequency antenna is a folded dipole antenna working in the UHF frequency band; the fourth layer of medium is in a square structure and is provided with a plurality of through holes, as shown in fig. 9; the plurality of through holes comprise a first hole, a second hole and a third hole, the first hole, the second hole and the third hole are respectively positioned on three sides of the fourth layer of medium, and the first hole is aligned with the second hole;
wherein l 7 And l 8 The distances between the third holes of the third layer medium and the two sides are respectively; d, d 1 The distance between the center of the first hole of the third dielectric layer and the edge is the distance between the center of the first hole of the third dielectric layer and the edge; rs is the diameter of the first hole of the third dielectric layer; l (L) 5 The side length of the structure is an I-shaped defective land; g 3 The width of the middle part of the structure is I-shaped;
l 3 and l 6 The lengths of the first section and the second section of feeder lines of the low-frequency antenna are respectively; w (w) 3 The width of the feed line for the low-frequency antenna; l (L) 4 Is the length, w, of an open branch on a low-frequency antenna feed line 4 Is the width of the open branch on the low frequency antenna feed line.
Further, the distance l between the third holes and the two sides of the third layer medium 7 、l 8 The ratio is l 7 ：l 8 =1:1; the distance d between the center of the third dielectric layer first hole and the edge 1 The ratio of the diameter Rs of the first hole of the third dielectric layer is d 1 : rs=5.5:4; side length l of I-shaped defective ground structure 5 Width g of the intermediate portion of the structure corresponding to the I-shaped defect 3 The ratio is l 5 ：g 3 =9:0.5; length of feed line of first section of low-frequency antenna 3 Length of feed line of second section of low frequency antennal 6 And length l of open branch on low frequency antenna feed line 4 The ratio is l 3 ：l 6 ：l 4 =15:22.4:7; width w of low frequency antenna feed line 3 And width w of open circuit branch on low frequency antenna feed line 4 The ratio is w 3 ：w 4 ＝1.5:4。
The semisteel cable includes: an inner core and an outer skin; one end of the inner core is connected with a first notch of the third-layer medium low-frequency antenna radiation patch, one end of the outer skin is connected with the first notch of the third-layer medium low-frequency antenna radiation patch, and the other end of the inner core is connected with a feed structure of the fourth-layer medium low-frequency antenna through a third hole of the fourth-layer medium; the other end of the outer skin is connected with the I-shaped notch of the fourth medium layer; the semisteel cable is a coaxial cable.
The metal support structure is connected with a third layer of medium and a fourth layer of medium, and the nonmetal fixing structure is connected with the first, second, third and fourth medium layers, as shown in fig. 8; the metal supporting structure is made of metal with high conductivity such as aluminum or stainless steel; the nonmetallic fixing structure is made of PVC plastic.
The square structures of the first, third and fourth dielectric layers are equal to the diagonal of the octagonal structure of the second dielectric layer, and the hypotenuse of the octagonal structure is used for matching with the feeding patch SMA connector of the second dielectric layer.
According to the technical scheme, the metal supporting structure is arranged between the third layer of medium and the fourth layer of medium, so that the side wall of the folded dipole antenna is realized; the feeding structure of the low-frequency antenna loaded with the open branch line is arranged below the fourth dielectric layer, and meanwhile, the dumbbell-shaped defected ground structure is arranged in the middle of the fourth dielectric layer, so that the function of the low-pass filter is improved. According to the technical scheme, the low-frequency antenna realizes miniaturized design through slotting and lumped parameter resistor loading, so that the low-frequency antenna has a size comparable to that of a high-frequency antenna; the low-frequency antenna and the high-frequency antenna are stacked, and the high-frequency antenna is arranged above the low-frequency antenna, so that the aperture multiplexing efficiency of 100% is realized; the low-frequency antenna feed branch is combined with the defect ground technology through the branch loading resonator to form a low-pass filter, so that the out-of-band emission in the working frequency band of the high-frequency antenna is greatly reduced; a T-shaped resonator is loaded on a high-frequency antenna feed branch joint, and band-stop response is integrated, so that a curve of gain versus frequency change of the T-shaped resonator generates null at a working frequency point of a low-frequency antenna.
Compared with the prior art, the invention has at least the following beneficial effects:
(1) According to the technical scheme, the interval between the low-frequency antenna and the high-frequency antenna is reasonably designed, the miniaturization design is realized through slotting and resistor loading on the dielectric layer of the low-frequency antenna, and the low-frequency antenna has similar size with the high-frequency antenna;
(2) According to the technical scheme, the low-frequency antenna and the high-frequency antenna are stacked, the radiation structure of the low-frequency antenna is simultaneously used as the reflector of the high-frequency antenna, and the high-frequency antenna is simultaneously used as the director of the low-frequency antenna, so that the shielding effect of the high-frequency antenna on the low-frequency antenna is avoided, and the aperture multiplexing efficiency of 100% is realized;
(3) The common aperture antenna designed by the technical scheme of the invention integrates low-pass and band-stop filter responses respectively with the low-frequency antenna and the high-frequency antenna, thereby realizing high isolation of different antennas in the aperture.
Drawings
The drawings are only for purposes of illustrating particular embodiments and are not to be construed as limiting the invention.
Fig. 1 is a schematic diagram of a side view of a common aperture antenna of the present invention;
FIG. 2 is a schematic diagram of a first layer of medium of the common aperture antenna of the present invention;
FIG. 3 is a schematic diagram of a patch above a first layer of dielectric of a common aperture antenna according to the present invention;
FIG. 4 is a schematic diagram of a second layer of medium for a common aperture antenna according to the present invention;
FIG. 5 is a schematic diagram of a patch over a second layer of dielectric for a common aperture antenna according to the present invention;
FIG. 6 is a schematic diagram of a patch under a second layer of dielectric of the common aperture antenna of the present invention;
FIG. 7 is a schematic diagram of a patch under a third layer of dielectric of the common aperture antenna of the present invention;
FIG. 8 is a schematic diagram of a folded dipole antenna sidewall under a common aperture antenna according to the present invention;
FIG. 9 is a schematic diagram of a fourth layer of medium for a common aperture antenna of the present invention;
FIG. 10 is a schematic diagram of a patch above a fourth layer of dielectric of the common aperture antenna of the present invention;
FIG. 11 is a schematic diagram of a patch under a fourth layer of dielectric of the common aperture antenna of the present invention;
fig. 12 shows the reflection coefficients before and after the integration of the filter response at the feed port 1 in the embodiment 1 of the common aperture antenna of the present invention;
fig. 13 shows gains before and after integrating filter response of the feed port 1 of the common aperture antenna embodiment 1 of the present invention;
fig. 14 shows the reflection coefficients before and after the integration of the filter response at the feed port 2 in the embodiment 1 of the common aperture antenna of the present invention;
fig. 15 shows gains before and after integrating filter response at the feed port 2 in the embodiment 1 of the common aperture antenna of the present invention;
fig. 16 shows the transmission coefficients between ports 1 and 2 before and after the integrated filter response of the common aperture antenna embodiment 1 of the present invention;
fig. 17 shows the gain before and after loading the circular patch on the feed port 2 of the common aperture antenna embodiment 1 of the present invention.
Detailed Description
In order that the above-recited objects, features and advantages of the present invention will be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description. It should be noted that, without conflict, the embodiments of the present invention and features in the embodiments may be combined with each other. In addition, the invention may be practiced otherwise than as specifically described and thus the scope of the invention is not limited by the specific embodiments disclosed herein.
In one embodiment of the present invention, as shown in fig. 1-17, a dual-frequency common-aperture antenna with high aperture multiplexing rate and high port isolation is disclosed, comprising:
the dual-frequency common aperture antenna comprises: the cable comprises a dielectric layer, a metal supporting structure, a nonmetal supporting structure and a semisteel cable; the dielectric layer comprises: a first layer of medium, a second layer of medium, a third layer of medium and a fourth layer of medium; two ends of the semi-rigid cable are respectively connected with the third layer medium and the fourth layer medium; the first, second, third and fourth dielectric layers are stacked based on the nonmetallic support structure, and are respectively placed from top to bottom as shown in fig. 1.
Preferably, the dielectric constants of the first, second, third and fourth dielectric layers are 1-20, and the loss tangent is 0.0001-0.02; the thickness of the dielectric layer is 0.6-1.0mm.
Further, the dielectric constants of the first, second, third and fourth dielectric layers are all 4.5, and the loss tangent is Fr-4 of 0.02; the thickness of the dielectric layer was 0.8mm.
The first layer of medium comprises a first layer of medium substrate and a parasitic metal patch of the high-frequency antenna; the parasitic metal patch of the high-frequency antenna is arranged above the first layer of dielectric substrate and is of a circular structure, as shown in fig. 3; the first layer of medium is of a square structure and is provided with a plurality of through holes; the plurality of through holes comprise a first layer of medium first hole and a first medium layer second hole which are respectively aligned on two sides of the first layer of medium; as shown in fig. 2;
wherein Ht is the distance between the first layer of medium and the fourth layer of medium; hp is the distance between the first layer of medium and the second layer of medium; hh is the spacing between the second layer of media and the third layer of media; hl is the distance between the third layer of medium and the fourth layer of medium; ls is the square side length of the first layer of medium; rp is the diameter of the circular parasitic patch arranged above the first layer of medium;
preferably, the size ratio of the distance Ht between the first layer of medium and the fourth layer of medium, the distance Hp between the first layer of medium and the second layer of medium, the distance Hh between the second layer of medium and the third layer of medium, and the distance Hl between the third layer of medium and the fourth layer of medium is:
further, the ratio of the distance Ht between the first layer medium and the fourth layer medium, the distance Hp between the first layer medium and the second layer medium, the distance Hh between the second layer medium and the third layer medium, and the distance Hl between the third layer medium and the fourth layer medium is Ht to Hh to hl=27 to 3 to 12 to 10; the size ratio of the square side length Ls of the first layer of medium to the diameter Rp of the circular parasitic patch arranged above the first layer of medium is ls:Rp=30:7.
According to the technical scheme, the parasitic circular patch structure of the high-frequency antenna is arranged above the first layer of medium, so that the gain of the high-frequency antenna is improved.
The second layer medium includes: the second layer of dielectric substrate, the first metal radiation patch and the second metal radiation patch of the high-frequency antenna, the feed patch and the T-shaped resonance branch; the first metal radiation patch, the second metal radiation patch and the feed patch of the high-frequency antenna are arranged above the second dielectric substrate, and the feed patch is connected with the T-shaped resonance branch, as shown in fig. 5; the first metal radiation patch, the second metal radiation patch and the feed patch of the high-frequency antenna are arranged below the second dielectric substrate, and the feed patch is connected with the T-shaped resonance branch, as shown in fig. 6;
one end of the feed patch is connected with one end of the first high-frequency antenna metal radiation patch, as shown in fig. 5-6; the second layer of medium is of an octagonal structure and is provided with a plurality of through holes; the plurality of through holes comprise a second layer of medium first holes and second medium layer second holes which are aligned on two sides of the second layer of medium, as shown in fig. 4.
Wherein Lh is the straight edge length of the second layer of medium; wt (Wt) 1 Is the width of the first section of patch on the T-shaped resonance branch, wt 2 Is the width Wt of the second section patch on the T-shaped resonance branch 3 The widths of the third section of patches on the T-shaped resonance branches are respectively; lt (Lt) 1 Is the length of the first section of patch on the T-shaped resonance branch, lt 2 Length Lt of second section patch on T-shaped resonance branch 3 The length of the third section of patch on the T-shaped resonance branch; l (L) 1 Feeding a first section of the feed patch, a line length; w (w) 1 The width of the first section of feeder line is the feeder patch; l (L) 2 The length of the second section of feeder line that is the feeder patch; w (w) 2 The width of the third section of feeder line;
preferably, the width Wt of the first patch on the T-shaped resonance branch 1 Width Wt of second section patch on T-shaped resonance branch 2 And the width Wt of the third section of patch on the T-shaped resonance branch 3 The ratio is Wt 1 ：Wt 2 ：Wt 3 ＝0.1:0.2:5；
Length Lt of first section patch on T-shaped resonance branch 1 Length Lt of second-segment patch on T-shaped resonance branch 2 And is the length Lt of the third section patch on the T-shaped resonance branch 3 Is at a ratio of Lt 1 ：Lt 2 ：Lt 3 ＝1:1:1；
First section feeder length of feeder patch 1 Length of second section feeder of feeding patch 2 The ratio is l 1 ：l 2 =18.9:12; width w of first section of feed line of feed patch 1 Width w of third section feeder 2 The ratio is w 1 ：w 2 ＝1.5：0.4。
Preferably, the edges of the first and second metal radiation patches of the high-frequency antenna are fitted by adopting a third-order Bezier curve, the center of a medium is used as an origin, and the expression of a curve equation is as follows:
P(t)＝A·(1-t) 3 +·(1-) 2 ·+·(1-)· 2 +· 3 ,＝0…1
wherein, the point A is the first control point of the curve, and the coordinates are: (x) 1 ，y 1 ) X and y are coordinate points; the point B is a second control point of the curve, and the coordinates are: (x) 2 ，y 2 ) The method comprises the steps of carrying out a first treatment on the surface of the The point C is the third control point of the curve, and the coordinates are: (x) 3 ，y 3 ) The method comprises the steps of carrying out a first treatment on the surface of the The point D is the fourth control point of the curve, and the coordinates are: (x) 4 ，y 4 ) The method comprises the steps of carrying out a first treatment on the surface of the P is the position of the edge of the curve; t is a variable in the range of 0-1, and by varying the value of t, a curve is obtained.
According to the technical scheme, the radiation patch of the high-frequency antenna and the feed patch loaded with the T-shaped resonance branch are respectively arranged on the upper surface and the lower surface of the second layer of medium, so that the band-stop response is introduced.
The third layer medium comprises a third layer medium substrate and a low-frequency antenna radiation patch, the low-frequency antenna radiation patch is arranged below the third layer medium substrate, and the low-frequency antenna radiation patch is simultaneously used as a reflector of the high-frequency antenna; the low frequency antenna radiation patch is provided with a plurality of notches, the notches comprise: the antenna comprises a first notch, a second notch and a third notch, wherein the first notch is arranged in the middle of the low-frequency antenna radiation patch, and the second notch and the third notch are symmetrically arranged on two sides of the low-frequency antenna radiation patch;
the first notch is provided with a low-frequency feed part, and the low-frequency feed part is a feed part of a low-frequency folded dipole antenna; the second notch and the third notch are respectively provided with resistors, the resistors are lumped parameter resistors, and the number of the resistors is four, as shown in fig. 7; the low-frequency antenna is a folded dipole antenna working in the UHF frequency band; the third layer medium is of a square structure and is provided with a plurality of through holes; the plurality of through holes comprise a third layer medium first hole and a third medium layer second hole which are aligned on two sides of the third layer medium.
Wherein g 1 The width of the slot is formed in the middle part of the patch structure arranged below the third-layer dielectric substrate; g 2 The width of the grooves on two sides of the patch structure arranged below the third layer of medium substrate is the width of the grooves on two sides of the patch structure; d, d 2 The space between the slotting of the middle part and the slotting of the two sides of the patch structure is arranged below the third layer of medium substrate;
further, the width g of the slot of the middle part of the patch structure arranged below the third layer of dielectric substrate 1 Width g of the slot on two sides of the patch structure 2 Is in g ratio 1 ：g 2 ＝1:2。
In the technical scheme, the feed part of the low-frequency folded dipole antenna is arranged in the middle of the radiation patch above the third dielectric layer through the slots, the miniaturized design is realized on the left side and the right side through the slots, and meanwhile, four lumped parameter resistors are loaded on the edges of the slots on the two sides, so that the smaller low-frequency antenna can be designed.
The fourth layer medium includes: a fourth dielectric substrate, a metal ground of the low-frequency antenna and a feed structure of the low-frequency antenna; the metal ground of the low-frequency antenna is arranged above the fourth-layer dielectric substrate, and the feed structure of the low-frequency antenna is arranged below the fourth-layer dielectric substrate; the feed structure of the low-frequency antenna is a low-pass filter feed structure, and open branch node lines are loaded on the feed structure, as shown in fig. 11; the metal ground of the low-frequency antenna is that a metal sheet is arranged on the grounding surface of the low-frequency antenna, and the metal sheet is connected with the grounding surface of the feed connector;
the metal ground of the low-frequency antenna is provided with an I-shaped notch which is of a defective metal ground structure and has the function of a low-pass filter, as shown in fig. 10; the I-shaped notch is a dumbbell-shaped notch; the low-frequency antenna is a folded dipole antenna working in the UHF frequency band; the fourth layer of medium is in a square structure and is provided with a plurality of through holes, as shown in fig. 9; the plurality of through holes comprise a first hole, a second hole and a third hole, the first hole, the second hole and the third hole are respectively positioned on three sides of the fourth layer of medium, and the first hole is aligned with the second hole;
wherein l 7 And l 8 The distances between the third holes of the third layer medium and the two sides are respectively; d, d 1 The distance between the center of the first hole of the third dielectric layer and the edge is the distance between the center of the first hole of the third dielectric layer and the edge; rs is the diameter of the first hole of the third dielectric layer; l (L) 5 The side length of the structure is an I-shaped defective land; g 3 The width of the middle part of the structure is I-shaped;
l 3 and l 6 The lengths of the first section and the second section of feeder lines of the low-frequency antenna are respectively; w (w) 3 The width of the feed line for the low-frequency antenna; l (L) 4 Is the length, w, of an open branch on a low-frequency antenna feed line 4 Is the width of the open branch on the low frequency antenna feed line.
Further, the distance l between the third holes and the two sides of the third layer medium 7 、l 8 The ratio is l 7 ：l 8 =1:1; the distance d between the center of the third dielectric layer first hole and the edge 1 The ratio of the diameter Rs of the first hole of the third dielectric layer is d 1 : rs=5.5:4; side length l of I-shaped defective ground structure 5 Width g of the intermediate portion of the structure corresponding to the I-shaped defect 3 The ratio is l 5 ：g 3 =9:0.5; length of feed line of first section of low-frequency antenna 3 Low frequency antennaLength of line second section feeder 6 And length l of open branch on low frequency antenna feed line 4 The ratio is l 3 ：l 6 ：l 4 =15:22.4:7; width w of low frequency antenna feed line 3 And width w of open circuit branch on low frequency antenna feed line 4 The ratio is w 3 ：w 4 ＝1.5:4。
The semisteel cable includes: an inner core and an outer skin; one end of the inner core is connected with a first notch of the third-layer medium low-frequency antenna radiation patch, one end of the outer skin is connected with the first notch of the third-layer medium low-frequency antenna radiation patch, and the other end of the inner core is connected with a feed structure of the fourth-layer medium low-frequency antenna through a third hole of the fourth-layer medium; the other end of the outer skin is connected with the I-shaped notch of the fourth medium layer; the semisteel cable is a coaxial cable.
The metal support structure is connected with a third layer of medium and a fourth layer of medium, and the nonmetal fixing structure is connected with the first, second, third and fourth medium layers, as shown in fig. 8; the metal supporting structure is made of metal with high conductivity such as aluminum or stainless steel; the nonmetallic fixing structure is made of PVC plastic.
The square structures of the first, third and fourth dielectric layers are equal to the diagonal of the octagonal structure of the second dielectric layer, and the hypotenuse of the octagonal structure is used for matching with the feeding patch SMA connector of the second dielectric layer.
In this embodiment, a dual-frequency common-aperture antenna with high aperture multiplexing rate and high port isolation has the following dimensions (unit: mm):
the antenna performance of the present invention is plotted based on the specific parameter values described above.
As shown in fig. 12, the reflection coefficient before and after the filter response is integrated in the feed port 1 (fig. 11) of the common aperture antenna of the present invention, and the bandwidth of the reflection coefficient less than-10 dB after the filter response is integrated is 0.77-1.06GHz.
As shown in fig. 13, for the gain before and after integrating the filter response of the feed port 1 (fig. 11) of the common aperture antenna of the present invention, the gain of the low frequency antenna after integrating the filter response generates a low pass filter-like response, and the gain at high frequencies is significantly reduced.
As shown in fig. 14, the reflection coefficients before and after the filter response of the common aperture antenna feed port 2 (fig. 5) are integrated, the impedance matching of the high frequency antenna is slightly improved after the filter response is integrated, and the bandwidth of the reflection coefficient smaller than-10 dB is 2.12-7GHz.
As shown in fig. 15, for the gain before and after the filter response is integrated in the feed port 2 (fig. 5) of the common aperture antenna of the present invention, the gain of the high frequency antenna after the filter response is integrated generates a response similar to that of the band-stop filter, and the gain in the operating band of the low frequency antenna is significantly reduced.
As shown in fig. 16, the transmission coefficients between the ports 1 and 2 before and after the integrated filter response of the common aperture antenna of the present invention are shown, and after the integrated filter response, the isolation between the low frequency antenna and the high frequency antenna is significantly improved, and is greater than 30dB in all the operating frequency bands.
As shown in fig. 17, the gain of the common aperture antenna feed port 2 before and after loading the circular patch is significantly improved by the gain of the high frequency antenna from 4GHz to 6.6GHz after loading the circular patch.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention.
Claims (4)
1. The dual-frequency common-aperture antenna with high aperture multiplexing rate and high port isolation is characterized by comprising a dielectric layer, a metal supporting structure, a nonmetal supporting structure and a semisteel cable; the medium layer comprises a first layer of medium, a second layer of medium, a third layer of medium and a fourth layer of medium; the first layer of medium comprises a first layer of medium substrate and a parasitic metal patch of the high-frequency antenna; the parasitic metal patch of the high-frequency antenna is arranged above the first layer of dielectric substrate;
the second layer of medium comprises a second layer of medium substrate, a first metal radiation patch of the high-frequency antenna, a second metal radiation patch of the high-frequency antenna, a feed patch and a T-shaped resonance branch;
the feed patch is connected with the T-shaped resonance branch;
the edges of the first metal radiation patch of the high-frequency antenna and the second metal radiation patch of the high-frequency antenna are fitted by adopting a third-order Bezier curve, the center of a medium is used as an origin, and the expression of a curve equation is as follows:
P(t)＝A·(1-t) 3 +B·(1-t) 2 ·t+C·(1-t)·t 2 +D·t 3 ,t＝0…1
wherein, the point A is the first control point of the curve, and the coordinates are (x) 1 ，y 1 ) X and y are coordinate points of an x axis and a y axis respectively; the point B is the second control point of the curve, and the coordinates are (x) 2 ，y 2 ) The method comprises the steps of carrying out a first treatment on the surface of the The point C is the third control point of the curve, and the coordinates are (x) 3 ，y 3 ) The method comprises the steps of carrying out a first treatment on the surface of the The point D is the fourth control point of the curve, and the coordinates are (x) 4 ，y 4 ) The method comprises the steps of carrying out a first treatment on the surface of the P is the position of the edge of the curve; t is a variable in the range of 0-1;
the third layer medium comprises a third layer medium substrate and a low-frequency antenna radiation patch, the low-frequency antenna radiation patch is arranged below the third layer medium substrate, and the low-frequency antenna radiation patch is simultaneously used as a reflector of the high-frequency antenna;
the low-frequency antenna radiation patch is provided with a first notch, a second notch and a third notch, the first notch is arranged in the middle of the low-frequency antenna radiation patch, and the second notch and the third notch are symmetrically arranged on two sides of the low-frequency antenna radiation patch.
2. The dual-band common aperture antenna of claim 1, wherein the fourth layer of dielectric comprises a fourth layer of dielectric substrate, a metal ground of the low-frequency antenna, and a feed structure of the low-frequency antenna; the metal ground of the low-frequency antenna is arranged above the fourth-layer dielectric substrate, and the feed structure of the low-frequency antenna is arranged below the fourth-layer dielectric substrate.
3. The dual-frequency, common-aperture antenna of claim 1, wherein the first layer of medium and the fourth layer of medium are at a distance: spacing of first layer medium and second layer medium: spacing of the second layer medium and the third layer medium: the ratio between the spacing of the third layer of media and the fourth layer of media is 27:3:12:10.
4. The dual-band common aperture antenna of claim 1, wherein a ratio of a width of a first notch of the patch structure disposed under the third layer dielectric substrate to a width of the second and third notches is 1:2:2.
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| CN113809556A (en) * | 2021-08-05 | 2021-12-17 | 华南理工大学 | Common-caliber dual-frequency dual-polarized antenna array and communication equipment |
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| CN104836019A (en) * | 2015-05-13 | 2015-08-12 | 西安电子科技大学 | Three-frequency-range common-caliber active navigation antenna |
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