CN100489597C - One-dimensional metal photon dielectric crystal and its design method and application - Google Patents
One-dimensional metal photon dielectric crystal and its design method and application Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 70
- 239000002184 metal Substances 0.000 title claims abstract description 70
- 239000013078 crystal Substances 0.000 title claims abstract description 52
- 238000013461 design Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 title claims description 10
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000010521 absorption reaction Methods 0.000 claims description 29
- 230000003252 repetitive effect Effects 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 claims 1
- JEJGUIDNYBAPGN-UHFFFAOYSA-N methylenedioxydimethylamphetamine Chemical compound CN(C)C(C)CC1=CC=C2OCOC2=C1 JEJGUIDNYBAPGN-UHFFFAOYSA-N 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000012528 membrane Substances 0.000 abstract description 3
- 238000001179 sorption measurement Methods 0.000 abstract 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 240000007762 Ficus drupacea Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
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Abstract
The invention relates to a one-dimension metal medium photon crystal, wherein the membrane is formed by metal layer at special thickness and medium layer at special arrangement; said special thickness is same as the metal skin depth; the special arrangement is period structure and quasi-period structure. The invention has high-adsorption band width, adsorption rate, and angle application range decided by the material factors of medium and metal, geometry thickness and repeated unit period number; said parameters based on the demands of adsorption working wavelength range and adsorption rate are selected. The invention has wide incidence angle, wide band, and high adsorption rate to be used to increase adsorption membrane of wideband laser energy meter or power meter receiver; and the narrow-band adsorption type can be used in laser welding or other areas. The invention has simple production and wide application.
Description
Technical field
The present invention relates to the metal photon dielectric crystal technology, particularly one-dimensional metal photon dielectric crystal and method for designing thereof and application.
Background technology
The research of metal photon dielectric crystal has become international important front edge research, and one of them focus is to seek the structure that realizes high absorption characteristic at specific band.At present, the photon crystal structure of having reported with this kind character is all very complicated, and is very high to the Experiment Preparation technical requirement, and this structure can only realize the electro-magnetic wave absorption to single polarization or single wavelength.Therefore restricted its application (Engineering the structure-induced enhanced absorption in three-dimensionalmetallic photonic crystals, Phys.Rev.E 70,066611,2004) greatly.The manufacturing technology of one-dimensional metal photon dielectric crystal (being traditional membrane structure) is very simple, mainly utilize the coating technique and the filming equipment of present comparative maturity, thereby this structure has a good application prospect.On the other hand, there is cutoff frequency in one-dimensional metal photon dielectric crystal.Near this cutoff frequency, it is very slow that the group velocity of light wave can become, and the intrinsic of adding the nano metal layer absorbs the high absorbing structure that just is expected to realize having special-purpose.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect of prior art, provide a kind of structure simple relatively, be easy to prepare the one-dimensional metal photon dielectric crystal structure of realization; This one-dimensional metal photon dielectric crystal structure can be had a high absorption characteristic of high absorption characteristic of wide incident angle and broadband or tool arrowband.
Another object of the present invention is to provide a kind of method that designs above-mentioned one-dimensional metal photon dielectric crystal.
A further object of the present invention is to provide the application of the one-dimensional metal photon dielectric crystal of the high absorption characteristic of high absorption characteristic of wide incident angle of above-mentioned tool and broadband or tool arrowband.
Purpose of the present invention is achieved through the following technical solutions: the architectural feature of this one-dimensional metal photon dielectric crystal is that rete is to arrange the one-dimentional structure that forms by metal level with special thickness and dielectric layer according to certain particular sequence, can realize high absorption characteristic; Described " special thickness " is meant the geometric thickness suitable with the metal skin depth; Described " particular sequence " mainly is meant periodic structure and quasi-periodic structure.
Wherein, the typical example of the quasi-periodic structure of wide incident angle of tool and the high absorption characteristic in broadband is the structure of Fibonacci (Fibonacci) or Thue-Morse series arrangement.Wherein the symbolic representation of Fibonacci quasi-periodic sequence is as follows: F
J+1={ F
J-1, F
j, j 〉=1, F
0=M, F
1=D, wherein, F
jBe Fibonacci j generation sequence quasi-periodicity; The symbolic representation of Thue-Morse quasi-periodic sequence is as follows: TM
0=D, all the other sequences are analogized according to rule " D → DM, M → MD ", for example TM
1=DM, TM
2=DMMD or the like; Wherein D is a media coating, and its refractive index and geometric thickness are respectively n
D, d
DM is a metallic diaphragm, and its refractive index and geometric thickness are respectively n
M, d
MFor example, for the 5th generation and the 7th generation the Fibonacci quasi-periodic sequence, its film structure is respectively F
5=(DMDMDDMD)
S, F
7=(DMDMDDMDMDDMDDMDMDDMD)
SFor the 5th generation Thuee-Morse quasi-periodic sequence, its film structure is TM
5=(DMMDMDDMMDDMDMMDMDDMDMMDDMMDMDDM)
SThe film of a unit represented in above-mentioned three formula brackets (...) is permutation and combination, and S is the repetitive periodicity.
" the high one-dimensional metal photon dielectric crystal that absorbs feature in wide incident angle of tool and broadband " that the present invention proposes also comprises the heterostructure that utilizes above-mentioned several single structures to form.Utilize such metal photon dielectric crystal heterostructure, we can do the bandwidth of high absorption band further to improve.This superior character will be brought wide application prospect on a lot of devices (as solar thermal collector etc.).By similar above-described selection principle, material and its geometric thickness are done suitable selection and adjusting, just can design the structure that covers visible light and near-infrared band simultaneously.Simultaneously, the high high absorption characteristic that absorbs one-dimensional metal photon dielectric crystal in above-mentioned broadband, the demand of all suitable dual-polarization and wide-angle incident.
" the high one-dimensional metal photon dielectric crystal that absorbs feature in tool arrowband " that the present invention proposes the most typical, the simplest a kind of be the structure of having only four tunic layers, as M
1D
1M
2D
2D wherein
1And D
2Be dielectric substance, as silicon dioxide, calcium fluoride, magnesium fluoride etc., they can be of the same race or same material not; M
1And M
2Be metal, as nickel, chromium, tin, or their alloy; M
1And M
2It also can be metal of the same race or not of the same race.
" the high feature that absorbs in wide incident angle of tool and broadband " that the present invention proposes or the one-dimensional metal photon dielectric crystal of " the high feature that absorbs in tool arrowband " are to obtain according to the density of states of photonic crystal is theoretical.There is cutoff frequency in one-dimensional metal photon dielectric crystal, and all electromagnetic waves that are lower than this frequency will be propagated in crystal by total ban.Near cutoff frequency, rapid increase can appear in photon state density, thereby causes the light wave group velocity very slow; If the nano metal layer exists intrinsic to absorb and impedance matching, light wave is just absorbed basically fully.
The method for designing of the one-dimensional metal photon dielectric crystal that the present invention is proposed is described below below:
For the one-dimensional metal photon dielectric crystal of " the high feature that absorbs in the wide incident angle of tool and broadband ", important indicators such as the high absorption band width of its structure, absorptivity size, the angle scope of application are all by material parameter, the geometric thickness (n of medium and metal
D, d
D, n
M, d
M) and structural parameters such as repetitive periodicity S determine jointly.These parameters can be according to absorbing service band and the requirement of absorptivity being selected.For example, for certain given sequence (as F
j), each structural parameters (n
D, d
D, n
M, d
M) combination the one-dimensional metal photon dielectric crystal structure, its high absorption bands is with difference.We can design different structural parameters conversely according to different application requirements.At first, the material of low-k (being low-refraction) is selected in the material requirements of media coating D, and its geometric thickness is big more, and the centre wavelength of absorption bands is got over red shift.The second, metallic diaphragm M requires the material intrinsic to absorb and wants big, as tungsten, nickel, chromium etc.; Also require the skin depth of metallic diaphragm thickness and this metal material suitable simultaneously.The 3rd, according to different, select different quasi-periodic sequence algebraically j (j=1～7) to the requirement that absorbs bandwidth and absorptivity; The j value is big more, and performance is good more.The 4th, repetitive periodicity S can not influence absorption bands, but can influence absorptivity; The S value is big more, and absorptivity is big more.
For the one-dimensional metal photon dielectric crystal of " the high feature that absorbs in tool arrowband ", important indicators such as the maximum absorption band of its structure, absorptivity size, the angle scope of application are still determined jointly by the structural parameters such as material parameter, geometric thickness and repetitive periodicity S thereof of medium and metal.Adopt above-mentioned similar method, according to different operation wavelengths and different absorptivity requirements, design as required again.
The one-dimensional metal photon dielectric crystal that the present invention proposes is having multiple preparation method aspect the technology making, for example use high performance coating machine plated film, also useful molecules beam epitaxy or the growth of mocvd method etc.
In a word, by above-mentioned design philosophy, the high absorption band width of the one-dimensional metal photon dielectric crystal of " the high feature that absorbs in wide incident angle of tool and broadband " that obtains can cover very wide wave band in polarizers of big angle scope, and absorptivity can reach more than 99%.This structure is easy to design and preparation, has overcome the shortcoming of existing photon crystal structure complexity and highly difficult making.Simultaneously, this structure integrates broadband, dual-polarization, wide-angle and numerous good characteristics such as absorption almost completely, has expanded its range of application greatly.For example, utilize this one-dimensional metal photon dielectric crystal structure to have the high characteristic that absorbs in wide incident angle and broadband, the high-performance wave-absorbing that can effectively solve military target such as aircraft requires (absorptivity is greater than 99%).And the quality of rete is very little, satisfies the light requirement of military equipment.Therefore the high one-dimensional metal photon dielectric crystal that absorbs in broadband can be widely used in the stealth to laser-guided bomb of aircraft or guided missile.Can be applicable to the increase absorbing membranous layer of broad band laser energy meter or power meter receiver in addition, or be used for as efficient extinction heat-absorbing devices such as solar thermal collectors.
The one-dimensional metal photon dielectric crystal of " the high feature that absorbs in tool arrowband " that the present invention proposes also has numerous application, for example laser welding technology.As everyone knows, laser bonding is the important development direction of electron device and optoelectronic device encapsulation.In optoelectronic device, be means with the infrared laser, metal film is a weld layer, can realize that the harmless, efficient, accurate of " transparent material " connects.By adjusting energy, the beam radius of laser, make it transmission through transparent material, and then the scolder that heats between the different transparent materials is realized welding.This technology has made full use of advantages such as efficient, the precision of laser, has realized harmless welding simultaneously.Reflectivity is very high at low temperatures but because of brazing metal, for making its fusing, must strengthen the laser power of incident, but when the approaching fusing of brazing metal, it becomes hypersorption suddenly, will produce gasification because of the laser energy that absorbs is excessive and make the welding failure, thus must solve brazing metal low temperature the time just to the problem of laser realization hypersorption.The high one-dimensional metal photon dielectric crystal that absorbs in arrowband among the present invention has just been realized this gordian technique.Utilize the one-dimensional metal photon dielectric crystal of this structure to make laser, therefore can be transferred to the welding optimum level to laser, make welding very good by hypersorption.When being used for the encapsulation laser bonding of electron device and optoelectronic device, aspect the character requirement of absorbing material and structure, except still require absorptivity very big, only require that the arrowband absorbs to get final product.Simple and the making easily of structural requirement this moment.The high one-dimensional metal photon dielectric crystal that absorbs in arrowband among the present invention just can satisfy this requirement, wherein the most typical, the simplest a kind of be the structure of having only four tunic layers.In addition, also can be applicable to the increase absorbing membranous layer of laser of narrowband energy meter or power meter receiver.
Description of drawings
Fig. 1 for by the 5th generation fibonacci sequence arrange the absorption characteristic pattern of the one-dimensional metal photon dielectric crystal form; Wherein, (a) be spectrogram, the shadow region represents that absorptivity is greater than 90%; (b) be the variation diagram of the absorption edge of double polarizing light with incident angle.
Fig. 2 for by the 7th generation the fibonacci sequence abosrption spectrogram of arranging the one-dimensional metal photon dielectric crystal form; Wherein the shadow region represents that absorptivity is greater than 99%.
Fig. 3 is the abosrption spectrogram of the one-dimensional metal photon dielectric crystal that formed by Thue-Morse 5 series arrangement; Wherein the shadow region represents that absorptivity is greater than 95%.
Fig. 4 is (M for structure
1D
1M
2D
2) the high abosrption spectrogram that absorbs the one-dimensional metal photon dielectric crystal of feature in arrowband.
Embodiment
The present invention is described in further detail below in conjunction with embodiment and accompanying drawing, but embodiments of the present invention are not limited thereto.
Embodiment 1
Fig. 1 show utilize the 5th generation the Fibonacci quasi-periodic sequence the absorption characteristic pattern of one-dimensional metal photon dielectric crystal, can realize that wide incident angle and broadband are high to absorb.Structure adopts F
5=(DMDMDDMD)
S, wherein, D is n
D=1.38 material is (as SiO
2), d
D=180nm, M are tungsten, d
M=10nm, S=3.Fig. 1 (a) shows, absorptivity has covered from 0.745 μ m to the very wide frequency band of 1.708 μ m at the spectral bandwidth more than 90%, and gross thickness is 2.79 μ m.Fig. 1 (b) shows that the high absorption edge of double polarizing light is almost constant in 0～50 ° incident angle scope, shows that the angle scope of application of this structure is very wide, can satisfy the demand of wide-angle incident basically.
Embodiment 2
Fig. 2 show utilize the 7th generation Fibonacci one-dimensional metal photon dielectric crystal quasi-periodicity abosrption spectrogram, can realize that wide incident angle and broadband are high to absorb.Structure adopts F
7=(DMDMDDMDMDDMDDMDMDDMD)
S, S=1 wherein, other parameters are as embodiment 1.Fig. 2 shows that it is 1 μ m, the frequency band of bandwidth from 0.868 μ m to 1.133 μ m that absorptivity has covered centre wavelength at the spectral bandwidth more than 99%, and gross thickness is 3.07 μ m.For transverse electric mode and two kinds of polarization states of transverse magnetic wave, the angle scope of application of this absorbent properties is 0～50 °, can satisfy the demand of wide-angle incident basically.
Embodiment 3
Fig. 3 shows the abosrption spectrogram of utilizing Thue-Morse one-dimensional metal photon dielectric crystal quasi-periodicity, realizes the high absorption of broadband and wide incident angle.Structure adopts TM
5=(DMMDMDDMMDDMDMMDMDDMDMMDDMMDMDDM)
S, wherein, D is n
D=2.67 material (for example GaN), d
D=80nm, M are crome metal, d
M=10nm.S＝1。Fig. 3 shows that it is 1.024 μ m, the frequency band of bandwidth from 0.817 μ m to 1.23 μ m that absorptivity has covered centre wavelength at the spectral bandwidth more than 95%, and gross thickness is 1.44 μ m.For transverse electric mode and two kinds of polarization states of transverse magnetic wave, the angle scope of application of this absorbent properties is 0～60 °, can satisfy the demand of wide-angle incident basically.
In the examples of implementation 1～3, all be the high structural design example that absorbs one-dimensional metal photon dielectric crystal in wide incident angle broadband.This characteristic can be used for military stealthy to laser guidance and laser radar of going up.Laser guidance and laser radar mainly will be with total solidifying laser and near infrared semiconductor laser from now on, thus stealthy be exactly need be broadband on the surface-coated of military targets such as aircraft, absorptivity reaches the absorbing material more than 99%.But existing invisible coating only can be realized the shortcomings such as the high absorption of low reflection to some or several optical maser wavelengths.This structure is very desirable to solving above-mentioned shortcoming.Also have, military equipment requires light, as be contained on the guided missile light more good more.The structural thickness of embodiment all below 3 μ m, can ignore by weight.Simultaneously, these designs simple in structure is very beneficial for preparation.
Embodiment 4
Fig. 4 shows the high abosrption spectrogram that absorbs one-dimensional metal photon dielectric crystal in arrowband.Structure adopts (M
1D
1M
2D
2)
S, D wherein
1And D
2Be n
D=1.38 material is (as SiO
2), d
D1=200nm, d
D2=253nm, M
1And M
2Be metallic nickel, d
M1=10nm, d
M2=80nm, S=1.As seen from Figure 4, this structure has embodied the high absorption characteristic in arrowband.Reach 99.9% in 1.06 μ m place absorptivities, realize absorbing fully.The greatest feature of this structure is exactly that structure is very simple, the low-cost large-scale production in the laser bonding of favourable electron device and optoelectronic device encapsulation.In actual production, metal layer material will be selected this electron device and the required solder alloy of optoelectronic device encapsulation.
The foregoing description is a preferred implementation of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under spirit of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (8)
1, a kind of one-dimensional metal photon dielectric crystal is characterized in that: its rete is arranged the one-dimentional structure that forms by dielectric layer and the metal level with special thickness according to certain particular sequence; Described " special thickness " is meant the geometric thickness suitable with the metal skin depth; Described " certain particular sequence " refers to periodic structure and quasi-periodic structure; Described quasi-periodic structure is the structure of Fibonacci or Thue-Morse series arrangement; Wherein, the symbolic representation of Fibonacci quasi-periodic sequence is as follows: F
J+1={ F
J-1, F
j, j 〉=1, F
0=M, F
1=D, wherein, F
jBe Fibonacci j generation sequence quasi-periodicity; The symbolic representation of Thue-Morse quasi-periodic sequence is as follows: TM
0=D, all the other sequences are analogized according to regular D → DM, M → MD; Wherein D is a media coating, and its refractive index and geometric thickness are respectively n
D, d
DM is a metallic diaphragm, and its refractive index and geometric thickness are respectively n
M, d
M
2, one-dimensional metal photon dielectric crystal according to claim 1 is characterized in that: described fibonacci sequence be arranged as the 5th generation or the 7th generation the Fibonacci quasi-periodic sequence; Wherein the film structure of the 5th generation sequence is F
5=(DMDMDDMD)
SThe film structure of the 7th generation sequence is F
7=(DMDMDDMDMDDMDDMDMDDMD)
SThe film of a unit represented in above-mentioned formula bracket (...) is permutation and combination, and S is the repetitive periodicity, S=1,2,3.
3, one-dimensional metal photon dielectric crystal according to claim 1 is characterized in that: described fibonacci sequence is arranged as the 5th generation Thue-Morse quasi-periodic sequence; Its film structure is TM
5=(DMMDMDDMMDDMDMMDMDDMDMMDDMMD MDDM)
SThe film of a unit represented in above-mentioned formula bracket (...) is permutation and combination, and S is the repetitive periodicity, S=1.
4, one-dimensional metal photon dielectric crystal according to claim 1 is characterized in that: comprise the heterostructure that utilizes several single structures to form; Described " single structure " refers to any generation Fibonacci quasi-periodic sequence and any generation Thue-Morse quasi-periodic sequence.
5, one-dimensional metal photon dielectric crystal according to claim 1 is characterized in that: the structure M that is four tunic layers
1D
1M
2D
2D wherein
1And D
2Being dielectric substance, is of the same race or same material not; M
1And M
2Be metal or alloy; It is metal or alloy of the same race or not of the same race.
6, according to the method for designing of each described one-dimensional metal photon dielectric crystal of claim 1～5, it is characterized in that: the index of the high absorption band width of one-dimensional metal photon dielectric crystal structure, absorptivity size, the angle scope of application is determined jointly that by the specific inductive capacity of medium, intrinsic absorption parameter, geometric thickness and the repetitive periodicity S structural parameters thereof of metal material these parameters are according to absorbing service band and the requirement of absorptivity being selected; Described design of Structural Parameters principle is as follows: at first, the material of low-k is selected in the material requirements of media coating, and its geometric thickness is big more, and the centre wavelength of absorption bands is got over red shift; The second, metallic diaphragm requires to select intrinsic to absorb big material, also requires the skin depth of metallic diaphragm thickness and this metal material suitable simultaneously; The 3rd, according to different, select different quasi-periodic sequence algebraically j, j=1～7 to the requirement that absorbs bandwidth and absorptivity; The 4th, repetitive periodicity S does not influence absorption bands, but influences absorptivity; The S value is big more, and absorptivity is big more.
7, according to the application of each described one-dimensional metal photon dielectric crystal of claim 1～4, it is characterized in that: be used for the stealth of military target; Or be applied to the increase absorbing membranous layer of broad band laser energy meter or power meter receiver; Or be used for solar thermal collector.
8, the application of one-dimensional metal photon dielectric crystal according to claim 5 is characterized in that: be used for laser bonding; Or be applied to the increase absorbing membranous layer of laser of narrowband energy meter or power meter receiver.
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| CN102323680A (en) * | 2011-09-15 | 2012-01-18 | 电子科技大学 | One-dimensional Fibonacci quasiperiodic photonic crystal based on excess photocarrier |
| CN103235360B (en) * | 2013-01-21 | 2015-08-05 | 南京大学 | The novel optical communication waveguide that model space is separated |
| CN108594336A (en) * | 2018-04-26 | 2018-09-28 | 谢逸音 | One-dimensional symmetry classes Fibonacci quasi-optics crystal and preparation method thereof and optical device |
| CN111609573B (en) * | 2020-06-02 | 2021-04-20 | 中国人民解放军火箭军工程大学 | Solar selective absorbing material utilizing multiple photon heterostructure interface |
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Non-Patent Citations (9)
| Title |
|---|
| engineering the structure-induced enhancedabsorptioninthree-dimensional metallic photonic cyrstal. Hong-Yi sang et al.PYHS. REV. E,Vol.70 . 2004 |
| engineering the structure-induced enhancedabsorptioninthree-dimensional metallic photonic cyrstal. Hong-Yi sang et al.PYHS. REV. E,Vol.70. 2004 * |
| Si/SiO2 multilayer - a 1-dimensional photonic crystal witha polaritonic gap. Herman hogstrom et al.PROC. SPIE.,Vol.5184 . 2003 |
| Si/SiO2 multilayer-a 1-dimensional photonic crystal witha polaritonic gap.Herman hogstrom et al.PROC. SPIE.,Vol.5184. 2003 * |
| 一维Au/ MgF2 光子晶体的透射性质. 刘佳誉等.光子学报，第35卷第1期. 2006 |
| 一维Au/MgF2光子晶体的透射性质. 刘佳誉等.光子学报，第35卷第1期. 2006 * |
| 一维金属_介质光子晶体的特性. 高强等.国防科技大学学报，第27卷第4期. 2005 |
| 光子晶体的研究进展. 李燕等.材料导报，第20卷第2期. 2006 |
| 光子晶体的研究进展. 李燕等.材料导报，第20卷第2期. 2006 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104553221A (en) * | 2015-01-20 | 2015-04-29 | 浙江大学 | High-performance spectral selectivity wave-absorbing element and solar heat photovoltaic system |
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