CN107515438B - Infrared wide-spectrum cut-off narrow-band laser light splitting element - Google Patents

Infrared wide-spectrum cut-off narrow-band laser light splitting element Download PDF

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CN107515438B
CN107515438B CN201710795923.4A CN201710795923A CN107515438B CN 107515438 B CN107515438 B CN 107515438B CN 201710795923 A CN201710795923 A CN 201710795923A CN 107515438 B CN107515438 B CN 107515438B
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film
wavelength
substrate
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narrow
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CN107515438A (en
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刘华松
孙鹏
姜玉刚
王利栓
陈丹
杨霄
季一勤
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Tianjin Jinhang Institute of Technical Physics
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/208Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/113Anti-reflection coatings using inorganic layer materials only
    • G02B1/115Multilayers

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Abstract

The invention discloses an infrared wide-band cut-off narrow-band laser light splitting element, which comprises: the filter comprises a substrate, wherein a long-wavelength-pass cut-off filter film is plated on a first surface (a) of the substrate, and a narrow-band-pass filter film is plated on a second surface (b) of the substrate. The invention designs the long-wave pass filter and the narrow-band pass filter on two surfaces of the element respectively, and can effectively control the surface shape change of the surfaces by adjusting the thicknesses of two film system structures, and the achievable technical indexes are as follows: the reflectivity in the wavelength range of 3-5 mu m reaches more than 99.99 percent, the average reflectivity in the wavelength range of 8-10.5 mu m reaches more than 96 percent, and the average reflectivity in the wavelength range of 10.7-12 mu m reaches more than 93 percent; the bandwidth of 10.6 μm wavelength is 0.3 μm, and the transmittance is more than 94%.

Description

Infrared wide-spectrum cut-off narrow-band laser light splitting element
Technical Field
The invention belongs to the technical field of optical films, in particular relates to a multi-band infrared light splitting technology, and relates to a transmission wide cut-off narrow band filter with reflection in the wavelength range of infrared 3-5 microns and long-wave infrared 8-12 microns and transmission in the wavelength range of 10.6 microns.
Background
In a great deal of military laser equipment at present, a Nd: YAG laser is mostly adopted as a laser light source. YAG laser output laser wavelength is 1.06 μm, on one hand, in complex battlefield environment, such as aerial fog, overcast and rainy, battlefield smoke and the like, the environment has large laser loss, and the laser system loses function under serious condition; on the other hand, laser light of this wavelength is much harmful to human eyes on a battlefield or a training field. CO 22The laser has many excellent performances, such as good atmospheric transmission performance under adverse weather conditions, mature laser output wavelength detector, easy realization of high-sensitivity heterodyne detection and three-dimensional imaging, mature information processing technology and the like, and can meet the requirements of military laser systems on the future battlefield. At present, based on CO2Laser coherent imaging laserThe method achieves the primary application in the fields of target range measurement, spacecraft docking, terrain following and obstacle avoidance, friend or foe tank identification, accurate guidance and the like.
CO2The wavelength of the laser is 10.6 μm, the laser has good compatibility with a thermal imaging system with a wave band of 8-12 μm, and the laser and the thermal imaging system share an optical scanning system, a receiving system, a detection system, an information processing system and the like. Within the field of precision guidance technology, active CO is used2The laser and the passive infrared can form a dual-mode imaging guidance system, has higher resolution, detection capability and anti-interference capability, and is suitable for all-weather combat. From the latest research trends at present, based on CO2The active detection of laser light combined with other guidance systems has become one of the main modes of guidance system development.
Infrared (3.5-4.7 μm) and (8-12 μm) are used as main wave bands for dual-mode guidance, and CO is added2The active laser detecting device constitutes a novel three-mode composite guidance system. In the photoelectric equipment under the composite system, how to separate three wave bands is a key technology in an optical system.
Disclosure of Invention
Objects of the invention
The purpose of the invention is: provides a narrow-band laser beam splitter with wide infrared band cut-off, which realizes high reflectivity in the wavelength range of medium-wave infrared 3-5 μm and long-wave infrared 8-12 μm, and realizes high transmissivity in narrow band (bandwidth less than or equal to 0.3 μm) at 10.6 μm.
(II) technical scheme
In order to solve the above technical problem, the present invention provides an infrared broadband cut-off narrowband laser splitting element, which includes: the filter comprises a substrate, wherein a long-wavelength-pass cut-off filter film is plated on a first surface a of the substrate, and a narrow-band-pass filter film is plated on a second surface b of the substrate.
Wherein the substrate is germanium or zinc selenide.
Wherein, the initial film system structure of the long-wavelength pass cut-off filtering film is as follows:
Sub|1LαA(1H 1L)^mAαB(1H 1L)^mA1A 1L|Air
wherein H, A and L represent high, medium and very low index materials, αAAnd αBRespectively representing the optical thickness coefficient, m, of each filmANumber of cycles of fundamental period 1H1L, unit optical thickness λ0/4,λ0Is the reference wavelength.
Wherein the reference wavelength is λ03.9 μm, the high index of refraction material was chosen to be germanium, the low index of refraction material was chosen to be zinc sulfide, and the very low index of refraction material was yttrium fluoride.
Wherein, the wavelength range is set to be 8-12 μm, the transmittance of the wave band is set to be the maximum value, the film system structure of the first surface a is optimized, five layers close to the surface of the substrate and five layers of space air are selected, and the film system structure is optimized as follows:
Sub|x1L x2H x3L x4H x5A(1H 1L)^(mA-2)αB(1H 1L)^(mA-2)αBH x6L x7H x8L x9Ax10L|Air
x1-x10is the optical thickness coefficient of the film.
Wherein, the film system structure of the narrow band-pass filtering film is as follows:
Sub|1L 1H 1.4L 1H 2L 0.9H 1L 0.9H 0.9L 0.9H 0.9L 0.9H 1.3L 2H 1L 1H|Air
wherein H and L represent high refractive index and low refractive index materials, respectively, and the unit optical thickness is lambda1/4,λ1Is the reference wavelength.
Wherein the reference wavelength is λ1The high refractive index material was selected to be germanium and the low refractive index material to be zinc sulfide, 10.6 μm.
Wherein a set wavelength range lambda1The maximum value of the transmission rate of +/-0.1 mu m is 8 mu m- (lambda)10.1 μm) and (. lamda.)1The reflectivity in the wavelength range of +0.1 μm) -13 μm is the maximum value, the design tolerance is 0.005, the film system structure of the second surface b is optimized, and the film system structure is optimized as follows:
Sub|y1L y2H y3L y4H y5L y6H y7L y8H y9L y10H y11L y12H y13L y14H y15L y16H|Air
y1-y16is the optical thickness coefficient of the film.
(III) advantageous effects
According to the infrared wide band cut-off narrow band laser beam splitting element provided by the technical scheme, the long-wave pass filter and the narrow-band pass filter are respectively designed on two surfaces of the element, the surface shape change of the surfaces can be effectively controlled by adjusting the thicknesses of the two film system structures, and the achievable technical indexes are as follows: the reflectivity in the wavelength range of 3-5 mu m reaches more than 99.99 percent, the average reflectivity in the wavelength range of 8-10.5 mu m reaches more than 96 percent, and the average reflectivity in the wavelength range of 10.7-12 mu m reaches more than 93 percent; the bandwidth of 10.6 μm wavelength is 0.3 μm, and the transmittance is more than 94%.
Drawings
Fig. 1 is a schematic structural diagram of a filter element.
Fig. 2 optical constants of a germanium substrate.
FIG. 3 optical constants of germanium (Ge) films.
FIG. 4 optical constants of a zinc sulfide (ZnS) thin film.
FIG. 5 YF3) Optical constants of the film.
FIG. 6 spectral reflectance curves for long wavelength pass.
Fig. 7 narrow band pass filter multilayer film reflectance curve.
Fig. 8 is a spectral transmittance curve of the spectroscopic element.
Detailed Description
In order to make the objects, contents, and advantages of the present invention clearer, the following detailed description of the embodiments of the present invention will be made in conjunction with the accompanying drawings and examples.
The invention provides a wide cut-off spectral optical thin film element with high reflectivity of an infrared band and high transmittance of a laser band, which comprises: the filter comprises a substrate, wherein a long-wavelength-pass cut-off filter film is plated on a first surface a of the substrate, and a narrow-band-pass filter film is plated on a second surface b of the substrate.
1) Designing a thin film structure of the surface a: the selected reference wavelength is λ03.9 μm, a high index material of germanium (Ge), a low index material of zinc sulfide (ZnS), and a very low index material of Yttrium Fluoride (YF) were selected3);
2) a surface long wave passing film, the initial film system structure is as follows:
Sub|1LαA(1H 1L)^mAαB(1H 1L)^mA1A 1L|Air
wherein the substrate Sub is germanium or zinc selenide, H, A and L represent high refractive index, medium refractive index and very low refractive index materials, αAAnd αBRespectively representing the optical thickness coefficient, m, of each filmANumber of cycles of fundamental period (1H 1L), unit optical thickness is lambda0/4。
3) Setting the wavelength range to be 8-12 μm and the transmittance of the wave band as the maximum value, optimizing the film system structure of the surface a, selecting five layers close to the surface of the substrate and five layers of space air, and optimizing the film system structure to be as follows:
Sub|x1L x2H x3L x4H x5A(1H 1L)^(mA-2)αB(1H 1L)^(mA-2)αBHx6L x7Hx8Lx9Ax10L|Air
x1-x10is the optical thickness coefficient of the film.
4) By different number m of cyclesAAdjusting the cut-off depth of the cut-off zone of the domain;
5) b, designing a thin film structure of the surface: the selected reference wavelength is λ0Selecting germanium (Ge) as a high refractive index material and zinc sulfide (ZnS) as a low refractive index material, 10.6 μm;
6) the film system structure of the surface b is as follows:
Sub|1L 1H 1.4L 1H 2L 0.9H 1L 0.9H 0.9L 0.9H 0.9L 0.9H 1.3L 2H 1L 1H|Air
wherein, the substrate Sub is germanium or zinc selenide, H and L respectively representHigh and low refractive index materials, with a unit optical thickness of lambda0/4。
7) Setting the wavelength range lambda0The maximum value of the transmission rate of +/-0.1 mu m is 8 mu m- (lambda)00.1 μm) and (. lamda.)0The reflectivity in the wavelength range of +0.1 mu m) -13 mu m is the maximum value, the design tolerance is 0.005, the structure of the film system on the surface b is optimized, and the optimized structure of the film system is as follows:
Sub|y1L y2H y3L y4H y5L y6H y7L y8H y9L y10H y11L y12H y13L y14H y15L y16H|Air
y1-y16is the optical thickness coefficient of the film.
8) By adjusting mAAnd stress matching of the surface a and the surface b is realized.
Examples
The structure schematic diagram of the light splitting film element is shown in FIG. 1;
the flat plate element is made of germanium material, and the optical constants of the flat plate element are shown in figure 2;
the high refractive index material is Ge film with optical constant shown in figure 3; the low refractive index material is ZnS film, and the optical constant is shown in figure 4; the very low refractive index material is selected to be YF3The optical constants of the film are shown in figure 5;
setting the reference wavelength to λ0=3.9μm;
The initial film system structure of the long-wave passing film on the surface A is as follows:
Sub|1L(1H 1L)^9(1.1H 1.1L)^91A 1L|Air
wherein Sub is germanium material, H, L and A represent Ge, ZnS and YF respectively3Thin film, each film having a unit optical thickness of lambda0/4,mA=9;
Setting the wavelength range to be 8-12 μm, setting the transmittance of the wave band to be the maximum value, setting the tolerance to be 0.005, optimizing the film system structure of the surface a, selecting five layers close to the surface of the substrate and five layers of space air, and optimizing the film system structure to be as follows:
Sub|0.1339L 2.0922H 0.5564L 0.4704H 0.0495L(1H 1L)^7(1.1H 1.1L)^71.1H1.1847L 0.7997H 1.741098L 0.6802A0.8846L|Air
the spectral reflectance of the long-wave pass of the a-surface is shown in FIG. 6;
the selected reference wavelength is λ0Selecting germanium (Ge) as a high refractive index material and zinc sulfide (ZnS) as a low refractive index material, 10.6 μm;
the initial structure of the film system on the surface b is as follows:
Sub|1L 1H 1.4L 1H 2L 0.9H 1L 0.9H 0.9L 0.9H 0.9L 0.9H 1.3L 2H 1L 1H|Air
wherein, the substrate Sub is germanium material, H and L respectively represent Ge film and ZnS film, and the unit optical thickness is lambda0/4。
Setting the transmittance in the wavelength range of 10.5-10.7 μm as the maximum value, the reflectivities in the wavelength ranges of 8-10.5 μm and 10.7-13 μm as the maximum values, and the design tolerances are all 0.005, optimizing the film system structure on the surface b, wherein the optimized film system structure is as follows:
Sub|1.0422L 1.1176H 1.3780L 1.0204H 2.1232L 0.8982H 0.9688L 0.9041H0.9453L 0.8994H 0.9311L 0.8617H 1.2932L 1.9740H 1.088L 1.0035H|Air
the spectral reflectance of the narrow band-pass filter film on the surface b is shown in FIG. 7;
fig. 8 shows the overall spectral transmittance, with a working angle of 45 °, the effect of the spectral characteristics is: the reflectivity in the wavelength range of 3-5 mu m reaches more than 99.99 percent, the average reflectivity in the wavelength range of 8-10.5 mu m reaches more than 96 percent, and the average reflectivity in the wavelength range of 10.7-12 mu m reaches more than 93 percent; the bandwidth of 10.6 μm wavelength is 0.3 μm, and the transmittance is more than 94%.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.

Claims (3)

1. An infrared wide band cut-off narrow band laser beam splitting element, the central wavelength is 10.6 μm, the bandwidth is less than or equal to 0.3 μm, it is characterized in that it includes: the optical filter comprises a substrate, wherein a first surface (a) of the substrate is plated with a long-wavelength-pass cut-off filter film, and a second surface (b) of the substrate is plated with a narrow-band-pass filter film;
the substrate is germanium or zinc selenide;
the initial film system structure of the long-wavelength-pass cut-off filtering film is as follows:
Sub|1LαA(1H 1L)^mAαB(1H 1L)^mA1A 1L|Air
wherein H, A and L represent high, medium and low index of refraction materials, αAAnd αBRespectively representing the optical thickness coefficient, m, of each filmANumber of periods of fundamental period 1H1L, unit optical thickness λ0/4,λ0Is a reference wavelength;
the reference wavelength is lambda0Selecting germanium as a high-refractive-index material, zinc sulfide as a medium-refractive-index material and yttrium fluoride as a low-refractive-index material, wherein the high-refractive-index material is 3.9 microns;
setting the wavelength range to be 8-12 mu m and the transmittance of the wave band as the maximum value, optimizing the film system structure of the first surface (a), selecting five layers close to the surface of the substrate and five layers of space air, and optimizing the film system structure to be as follows:
Sub|x1L x2H x3L x4H x5A(1H 1L)^(mA-2)αB(1H 1L)^(mA-2)αBH x6L x7H x8L x9A x10L|Air
x1-x10is the optical thickness coefficient of the film;
the film system structure of the narrow band-pass filtering film is as follows:
Sub|1L 1H 1.4L 1H 2L 0.9H 1L 0.9H 0.9L 0.9H 0.9L 0.9H 1.3L 2H1L 1H|Air
wherein H and L represent high refractive index and low refractive index materials, respectively, and the unit optical thickness is lambda1/4,λ1Is the reference wavelength.
2. Red according to claim 1The external broad band cut-off narrow band laser beam splitter is characterized in that the reference wavelength is lambda1The high refractive index material was selected to be germanium and the medium refractive index material to be zinc sulfide, 10.6 μm.
3. The infrared broad band cut-off narrow band laser splitting element as claimed in claim 2, wherein the set wavelength range λ1The maximum value of the transmission rate of +/-0.1 mu m is 8 mu m- (lambda)10.1 μm) and (. lamda.)1The reflectivity in the wavelength range of +0.1 μm) -13 μm is the maximum value, the design tolerance is 0.005, the film system structure of the second surface (b) is optimized, and the film system structure is optimized as follows: sub | y1L y2H y3L y4H y5L y6H y7L y8H y9L y10H y11L y12H y13L y14H y15L y16H|Air
y1-y16Is the optical thickness coefficient of the film.
CN201710795923.4A 2017-09-06 2017-09-06 Infrared wide-spectrum cut-off narrow-band laser light splitting element Active CN107515438B (en)

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