CN208207265U - A kind of deep ultraviolet narrow band filter - Google Patents
A kind of deep ultraviolet narrow band filter Download PDFInfo
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- CN208207265U CN208207265U CN201820723975.0U CN201820723975U CN208207265U CN 208207265 U CN208207265 U CN 208207265U CN 201820723975 U CN201820723975 U CN 201820723975U CN 208207265 U CN208207265 U CN 208207265U
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Abstract
The utility model belongs to thin film optical technology field, it is related to a kind of deep ultraviolet narrow band filter and preparation method thereof, main structure includes basal layer, filter layer, film layer and protective layer, it is designed using the transmission filter that the design concept of F-P bandpass filters combines metal-dielectric, tandem arrangement metal-dielectric optical filter is selected to inhibit the bypass belt of long-wavelength region, bandwidth is reduced using all dielectric optical filter, tandem arrangement forms the simple F-P optical filter of structure with the multi-layer film structure that high-index material/low-index material forms on the basis of double half-wave F-P interference filter chip architectures (reflecting layer/wall/reflecting layer/wall/reflecting layer/wall), it realizes and ends in the depth of specific deep ultraviolet band, by the shape for changing filter layer, it can reduce the half-band width of deep ultraviolet narrow band filter；Its filter sheet structure is simple, ensure that the transmitance and depth cut-off of visible light, reduces the half-band width of deep ultraviolet narrow band filter.
Description
Technical field:
The utility model belongs to thin film optical technology field, is related to a kind of deep ultraviolet narrow band filter, the optical filter of preparation
Narrow bandwidth and transmitance are high, can be realized the depth cut-off of broad range, solve deep ultraviolet filtering problem.
Background technique:
Optical filter is the optical device for choosing required radiation wave band, and the general character of optical filter is exactly no any optical filter
The imaging of celestial body can be allowed to become brighter, because all optical filters can all absorb certain wavelength, so that object be made to become darker.
Optical filter is that plastics or sheet glass add special dye and be made into, and Red lightscreening plate can only allow feux rouges to pass through, and so analogize, glass
The transmissivity of glass piece is originally similar with air, and all colored lights can pass through, so being transparent, but contaminate dyestuff
Afterwards, molecule structure change, refractive index also change, and just change to passing through for certain coloured light, for example beam of white light passes through
Blue color filter, injection is a branch of blue light, and green light, feux rouges are few, most of to be absorbed by optical filter.The effect of optical filter
It is very big, it is widely used in photographic circle, the landscape painting of some photography great master shootings, it is how to do why main scape is always so prominent
Arrive? this has just used optical filter, for example you want to be started auction a chrysanthemum with camera, and background is blue sky, greenery, if according to usual
It claps, " chrysanthemum " this theme cannot be protruded, because the image of chrysanthemum is not prominent enough, still, if putting a Huang before camera lens
Colo(u)r filter, the blue light that the green light and blue sky for stopping a part of greenery to scatter scatter, and the yellow light for allowing chrysanthemum to scatter is big
Amount passes through, in this way, chrysanthemum just seems fairly obvious, highlights " chrysanthemum " this theme.Optical filtering flake products mainly press spectrum wave
The modes such as section, spectral characteristic, film material, application characteristic are classified: being divided into ultraviolet filter, vision filter according to spectral band
And infrared fileter；According to spectral characteristic be divided into bandpass filter (light of selected wave band passes through, the light cut-off other than passband,
Optical index is mainly central wavelength CWL and half-band width FWHM, is divided into narrowband and broadband, such as 808 optical filter NBF- of narrowband
808), edge filter, light splitting optical filter, neutral-density filter and reflection filter；It is divided into mantle filter according to film material
Mating plate and dura mater optical filter, in terms of dura mater optical filter refers not only to film hardness, it is often more important that its laser damage threshold, so
It is widely used in laser system, and thin-skinned film optical filters are then mainly used in Biochemical Analyzer.
The basic theory of optical thin film, which is built upon, to be derived on the basis of Theory of Electromagnetic Field and Maxwell equation,
The optical characteristics for studying membrane system is exactly propagation of the studying plane electromagnetic wave by layered medium for theoretical point view.Cause
This, the most efficient method of processing film problem is exactly to solve Maxwell equation, with Maxwell equation and three substance equations
For fundamental formular, the wave equation of electromagnetic wave has been obtained by mathematical derivation, as follows for nonconducting uniform dielectric:
When plane electromagnetic wave is with angular frequency, when along direction vector k propagation distance being that radius vector r is propagated, equation (2-1) with
The solution of (2-2) are as follows:
Electric field E and magnetic field H are mutually perpendicular to, each vertical with the direction of propagation K0 of wave, meet dextrorotation rule.From max
The electromagnetic theory fundamental formular of Wei is set out, and can obtain the numerical relation between H and E by mathematical derivation by formula (1-1) and (1-3)
Are as follows:
Wherein Y is known as the optical admittance of medium, and meaning is the ratio of electric field strength and magnetic field strength.μ0For magnetic conductivity, ε0
For dielectric constant.In optical band, μrIt is sufficiently close to 1.
In incident medium, advanced and negative direction two kinds of waves of traveling by positive direction.Symbolically one and two as shown in Figure 6
Each component of medium.According to the integrated form of Maxwell equation, can release tangential direction of the light on interface be it is continuous,
For monofilm, application boundary condition be can be written on interface:
Formula can be obtained by deriving:
Optically, the property of the homogeneous dielectric film between two uniform medias is especially important, it is assumed that all
Medium is all nonmagnetic (μr=1) monofilm equivalent interface as shown in Figure 7, is obtained, whereinAt interface 1, can be obtained according to boundary condition:
The electric field schematic diagram of monofilm using matrix form expression as shown in figure 8, can be obtained:
Wherein, the position phase thickness of matrix are as follows:
I.e.It is known that:
Wherein, it can be write as interface 2 using boundary condition:
Write as the form of matrix are as follows:
The assemblage characteristic matrix of substrate and film simultaneously are as follows:
The case where can be generalized to multilayer film according to the above-mentioned analysis to monofilm and calculating, the eigenmatrix of multilayer film
Are as follows:
Its phase thickness:
The calculation formula of this multilayer film is suitable for the calculating of all film layer characteristics.
A kind of near-infrared narrow band filter packet for somatosensory recognition system disclosed in Chinese patent 201210548652.X
It includes substrate and is located at the main membrane system of narrow band filter and cut-off membrane system of two opposing surface of substrate, the narrow band filter
Main membrane system and cut-off membrane system, which are divided equally, not to be alternately stacked by high refractive index layer and low-index film, the high refractive index film
Layer and low-index film deposit to be formed by vacuum coating method, the passband center wavelengths of the main membrane system of narrow band filter and
Somatosensory recognition system infrared emission light source central wavelength is consistent；The main membrane system of narrow band filter is that long wave leads to membrane stack and short-pass
The structure of membrane stack superposition, the passband center wavelengths of the main membrane system of narrow band filter are 850nm, passband width be 20nm~
50nm；The cut-off membrane system is that long wave leads to film stacking structure, and the cutoff range of the cut-off membrane system is 400nm~630nm, passband model
It encloses for 750nm~1000nm；The long wave leads to membrane stack and is added by the basic membrane stack that multiple structure types are 0.5HL0.5H,
The short-pass membrane stack is added by the basic membrane stack that multiple structure types are 0.5LH0.5L, wherein H represents high refractive index
Film layer, L represent low-index film；Total film layer number of the main membrane system of narrow band filter is 40 layers~55 layers, the cut film
Total film layer number of system is 30 layers~45 layers；A kind of short-wave infrared narrow band filter disclosed in Chinese patent 201610971376.6
Positive membrane system A/ (HL) ^4L (HL) ^8L (HL) ^8L (HL) ^4 for including: substrate and being formed in substrate both side surface
1.64H0.64L/S and reverse side membrane system A/ (0.5HL0.5H) ^11 α (0.5HL0.5H) ^12 β (0.5LH0.5L) ^7 γ
(0.5LH0.5L) ^10 ω (0.5LH0.5L) ^10/S, the symbol meaning in membrane system: A is air, and S is H-K9L substrate of glass, H
Two titaniums are aoxidized for high-index material five, L is low-index material silica, and α, β, γ and ω respectively indicate each membrane system center
The multiple of wavelength and central wavelength；A kind of cut-off ultra-narrow band pass filter of broadband disclosed in Chinese patent 201611007468.9 includes
Substrate, two surfaces of the substrate are denoted as the face A and the face B respectively, and the face A and the face B all have laminated reflective film, in institute
Stating has broadband light cutoff filter film, film structure are as follows: substrate/α i (0.5HL0.5H) ^a α i-1 (0.5HL0.5H) ^ on the face A
A... (0.5HL0.5H) ^a of α 1 β 1 (0.5LH0.5L) ^b β 2 (0.5LH0.5L) ^b... β j (0.5LH0.5L) ^b/ air,
Middle H is high-index material, and L is low-index material, α i=0.8 α i-1 ..., α 2=0.8 α 1, α 1=0.8, β 1=1.2, β
2=1.2 β 1 ..., β j=1.2 β j-1；Selection i and j value is wherein required according to cut off band width, selection a is required according to cut-off degree
With b value；There is ultra-narrow band light filter film, film structure are as follows: substrate/L (HL) ^mnH (LH) ^mL (HL) ^mnH on the face B
(LH) ^mLHL/ air, bandwidth and cut-off degree according to the ultra-narrow with light filter film require selection m and n value；Chinese patent
201710421753.3 a kind of disclosed narrow band filter film plating process includes the following steps: S1: the one of blank glass substrate
Side surface is coated with main film membrane stack, so that said primary membrane membrane stack and blank glass substrate is constituted equivalent substrate, the equivalent substrate is in
The equivalent refractive index of cardiac wave strong point is equal with the blank glass substrate refractive index；S2: the side surface plating of the equivalent substrate
The secondary film membrane stack of system first is coated with the second secondary film membrane stack in another side surface；One kind disclosed in Chinese patent 201720097206.X
Height ends, the quasi- rectangle narrow band filter of low ripple includes substrate and the main membrane system and cut film for being separately positioned on substrate two sides
System, main membrane system and cut-off membrane system are made of three reset cycle films of the Fabry-Perot filter of four different equivalent refractive index,
Main membrane system is preferably G [(HL) ^4H2L3H (LH) ^4L (HL) ^5H2LH (LH) ^5 L (HL) ^5H2L3H (LH) ^5L (HL) ^
4H2L3H (LH) ^4L] 3A, wherein H and L respectively indicates the high refractive index film and low refractive index film of quarter-wave film thickness, high
Refractive index film is titanium oxide, niobium oxide or tantalum oxide, and low refractive index film is silica；Chinese patent 201611192856.9 is public
A kind of ultra-narrow band pass filter for the observation of Middle and upper atmosphere wind field on daytime opened includes: the interferometric filter that combination is placed and solid
State F-P etalon；Wherein, the interferometric filter is for tentatively inhibiting bias light；The solid-state F-P etalon is whole for controlling
The bandwidth of body optical filter, the solid-state F-P etalon are according to principle of interference, using two blocks of parallel glass plates or quartz plate
Composition, after incident light is irradiated to etalon, can generate interference fringe in exit end；The optical filter that above-mentioned patent is related to is narrowband
Optical filter, the main function of narrow band filter are to carry out optical electivity to light, pass through the light needed, the light of unwanted wavelength
Ended, narrow band filter is epochmaking optical component in photovoltaic applications and laser technology, it is desirable that it is with good light
It learns and mechanical performance, as central wavelength is with good stability, peak transmittance is high, cut-off with high inhibits ratio, film layer tool
There are good uniformity and firmness etc.；Deep ultraviolet optical filter can eliminate visible and ultra-violet (UV) band veiling glare, in spectroscopy, swash
Many fields such as light, astrophysics have a wide range of applications；There is presently no the narrow band filters for being applied to deep ultraviolet band.
Therefore, a kind of deep ultraviolet narrow band filter of R & D design and preparation method thereof, to prepare narrow bandwidth and the high optical filter of transmitance,
The depth cut-off for realizing broad range, solves deep ultraviolet filtering problem, has good society and economic value, application prospect wide
It is wealthy.
The rejection zone of all dielectric bandpass filter is relatively narrow, but is only effective, alldielectric narrowband filter in finite region
Highly reflecting films have reflection bandwidth, so filter transmission peak value both sides will appear bypass belt.In most applications, must
Bypass belt must be curbed: as long as usual shortwave bypass belt is superimposed one piece of long wave on optical filter, logical heat absorbing glass optical filter is made a return journey
Fall, although short-pass heat absorbing glass optical filter can effectively inhibit long wave to lead to sideband, transmissivity is too low in terms of its shortwave, reduces
The peak transmittance of whole membrane system, and optical filter cut-off is very difficult in the range of 200nm-250nm, because
Without short-pass heat absorbing glass optical filter in this spectral region.There are two types of cut-off methods for current research, and one is increase gold
Category-dielectric filter, another kind are that reflecting mirror of connecting with optical filter is ended, level-one minor metal-medium Fabry-Perot Luo filter
The advantages of mating plate is exactly not have long wave bypass belt, the disadvantage is that peak transmission is very low, half width is just very big, so that cut-off degree and leading to
Belt shape is not available.
Summary of the invention:
The purpose of the utility model is to overcome disadvantage of the existing technology, a kind of deep ultraviolet narrow-band-filter of R & D design
Piece, prepares a kind of narrow bandwidth and transmitance is high, can be realized the depth cut-off of broad range, solves the filter of deep ultraviolet filtering problem
Mating plate.
To achieve the goals above, the utility model relates to the main structure of deep ultraviolet narrow band filter include substrate
Layer, filter layer, film layer and protective layer；The surface of basal layer deposits the filter layer for the F-P cavity that haves three layers, top layer's filter layer
Surface be deposited with the film layer of 2n-1 (n be integer) greater than 1 layer prefect dielectric multi-cavity optical filter, the surface of film layer is coated with protection
Layer；The material of basal layer and protective layer includes MgF2(magnesium fluoride), LiF (lithium fluoride), SiO2(quartz), K9 glass and JGS1 (stone
English sheet glass)；The main structure of filter layer includes filter layer wall and reflecting layer, and the upper surface in reflecting layer, which deposits, filters
Sheet gap layer, filter layer are double half-wave F-P interference filter chip architecture (reflecting layer/filter layer wall/reflecting layer/filter
Mating plate interlayer interlayer/reflecting layer/filter layer wall)；The main structure of film layer includes refracting layer and film layer wall, refraction
The upper surface depositional coating wall of layer, film layer are high-index material/low-index material combination F-P optical filter membrane system,
High-index material combines the half-band width that can reduce deep ultraviolet narrow band filter with low-index material, and the number of plies of film layer is got over
More, the half-band width of deep ultraviolet narrow band filter is smaller, and optical property is lower；The material of filter layer wall and film layer wall
Including MgF2And SiO2；The material in reflecting layer includes Al (aluminium), HfO2(hafnium oxide), AlF3(aluminum trifluoride) and PbF2(fluorination
Lead)；The material of refracting layer includes Al2O3(aluminium oxide).
The utility model compared with prior art, combines metal-dielectric using the design concept of F-P bandpass filters
Transmission filter is designed, and is selected tandem arrangement metal-dielectric optical filter to inhibit the bypass belt of long-wavelength region, is filtered using all dielectric
Piece reduces bandwidth, double half-wave F-P interference filter chip architectures (reflecting layer/wall/reflecting layer/wall/reflecting layer/
Interlayer) on the basis of the multi-layer film structure that is formed with high-index material/low-index material of tandem arrangement form the simple F-P filter of structure
Mating plate is realized and is ended in the depth of specific deep ultraviolet band, by changing the shape of filter layer, it is narrow to can reduce deep ultraviolet
Half-band width with optical filter separates selected film layer from membrane system, the group of entire membrane system share two it is selected effective
Interface indicates that, as long as considering the beam interference in selected film layer, the optical characteristics of multilayer film can acquire, and therefrom obtain
The method for designing membrane system；Its filter sheet structure is simple, and production method is easy, and scientific in principle is reliable, ensure that the transmission of visible light
Rate and depth cut-off, reduce the half-band width of deep ultraviolet narrow band filter.
Detailed description of the invention:
Fig. 1 is the main structure schematic illustration of the utility model.
Fig. 2 be the utility model relates to deep ultraviolet narrow-band-filter piece preparation method flow diagram.
Fig. 3 is that the transmitance for the deep ultraviolet narrow band filter that the utility model embodiment 2 is related to is shown with wavelength linear relationship
It is intended to.
Fig. 4 is the transmitance and wavelength linear relationship log for the deep ultraviolet narrow band filter that the utility model embodiment 2 is related to
Form schematic diagram.
Fig. 5 is that the specific embodiment for the deep ultraviolet narrow-band-filter piece preparation method that the utility model embodiment 2 is related to is shown
It is intended to.
The electric vector direction symbol schematic diagram taken when the vertical incidence that Fig. 6 is related to by the utility model background technique.
Fig. 7 is the monofilm equivalent interface schematic diagram that the utility model background technique is related to.
Fig. 8 is the electric field schematic diagram for the monofilm that the utility model background technique is related to.
Specific embodiment:
The utility model is described further by way of example and in conjunction with the accompanying drawings.
Embodiment 1:
The main structure for the deep ultraviolet narrow band filter that the present embodiment is related to includes basal layer 1, filter layer 2,3 and of film layer
Protective layer 4；The upper surface of basal layer 1 is deposited with 3 multilayer filter layers 2, and the upper surface of top layer's filter layer 2 is deposited with 13 tunics
Layer 3；Basal layer 1 is JGS1；The main structure of filter layer 2 includes filter layer wall 10 and reflecting layer 20, reflecting layer 20
Upper surface deposit filter layer wall 10, filter layer wall 10 be SiO2, reflecting layer 20 is Al, and filter layer 2 is
Double half-wave F-P interference filter chip architecture (Al/SiO2/Al/SiO2/Al/SiO2), metal Al has biggish in visible light wave range
Extinction coefficient and high reflection characteristic, Al and SiO2Combination can be realized specific band depth cut-off and in deep ultraviolet band
High-transmission rate；The main structure of film layer 3 includes filter layer wall 10 and refracting layer 30, and the upper surface of refracting layer 30 deposits filter
Mating plate interlayer interlayer 10, refracting layer 30 are Al2O3, film layer wall 40 is MgF2, MgF2Make in the extinction coefficient of ultraviolet band
MgF2It can be Al as the optical film materials of deep ultraviolet band, film layer 32O3/ MgF2Combined F-P optical filter membrane system,
Al2O3With MgF2Combination can reduce the half-band width of deep ultraviolet narrow band filter, protective layer 4 is SiO2。
The Al that the present embodiment is related to2O3Film and MgF2The reasonable cooperation of film makes the transmitance of film layer 3 be greater than filter layer 2
Transmitance, additionally it is possible to which the anti-reflection purpose for reaching deep ultraviolet narrow band filter reduces the reflected light at interface, improves the transmission of spectrum
Rate.
The film structure for the deep ultraviolet narrow band filter that the present embodiment is related to is JGS1/Al/ SiO2/Al/SiO2/Al/
SiO2/Al2O3/MgF2/Al2O3/MgF2/Al2O3/MgF2/Al2O3/MgF2 /Al2O3/MgF2/Al2O3/MgF2/Al2O3/MgF2/
Al2O3/MgF2/Al2O3/MgF2/Al2O3/ MgF2/Al2O3/MgF2/Al2O3/MgF2/Al2O3/MgF2/SiO2。
Embodiment 2:
The specific embodiment for the deep ultraviolet narrow-band-filter piece preparation method that the present embodiment is related to include design membrane system formula,
It prepares basal layer, prepare filter layer, preparation film layer and control thicknesses of layers totally five steps:
(1) membrane system formula is designed: JGS1, Al, the SiO selected according to embodiment 12、 Al2O3And MgF2Refractive index, disappear
The technical requirements of backscatter extinction logarithmic ratio and bandwidth less than 2nm design membrane system formula: SiO2|HMH H2MH(MH)^2M(HM)^2H2MH
(MH) ^2 (NL) ^3 | JGS1, wherein L is Al, H Al2O3, M MgF2, N SiO2, using Essential Macleod (light
Learn film analysis and design software) or TFCalc (thin film design software) analog simulation, optimization and physics are carried out to membrane system formula
The change of thickness value；
(2) it prepares basal layer: JGS1 being cut into basal layer 1 according to the size of setting；
(3) it prepares filter layer: choosing SiO2For filter layer wall 10, Al is reflecting layer 20, according in basal layer
1 upper surface deposits 1 layer of Al film, then plates 1 layer of SiO in the upper surface of Al film2The sequence of film is always co-deposited 3 layers of Al film, plates 3 layers
SiO2Film completes the production of filter layer 2；
SiO is plated on the surface of Al film2The effect of film is to prevent Al film from aoxidizing；
(4) it prepares film layer: choosing the lower MgF of refractive index2For film layer wall 40, the higher Al of refractive index2O3For folding
Layer 30 is penetrated, deposits 1 layer of Al according in the upper surface of filter layer 22O3Film, then in Al2O3Plate 1 layer of MgF in the upper surface of film2Film
Sequentially, 13 layers of Al are always co-deposited2O3Film plates 13 layers of MgF2Film completes the production of film layer 3, and 1 layer of protective layer 4 is plated in film layer 3,
Obtain deep ultraviolet narrow band filter；
(5) it controls thicknesses of layers: using electron beam evaporation method or ion sputtering process according to actual needs, supervised using crystal
The mode of control controls the thickness of deep ultraviolet narrow band filter by controlling the growth time of film layer 2, makes MgF2Film becomes Al
The anti-reflection film of film, to improve the transmissivity of deep ultraviolet narrow band filter.
Al film in deep ultraviolet narrow band filter manufactured in the present embodiment has biggish extinction coefficient in visible light wave range
And high reflection characteristic, it can be realized the cut-off of the wavelength of 10-195nm, reduce deep ultraviolet by increasing the thickness of filter layer 2
The half-band width of narrow band filter；Plate MgF2Film and depositing Al film and Al2O3The method of film includes electron beam evaporation method and magnetic control
Sputtering method.
Claims (1)
1. a kind of deep ultraviolet narrow band filter, it is characterised in that main structure includes basal layer, filter layer, film layer and protection
Layer；The surface of basal layer deposits the filter layer for the F-P cavity that haves three layers, and the surface of top layer's filter layer is deposited with 2n-1 layers of pure Jie
Plate matcoveredn in the surface of the film layer of matter multi-cavity optical filter, film layer；The main structure of filter layer includes filter layer wall
And reflecting layer, the upper surface in reflecting layer deposit filter layer wall, filter layer is double half-wave F-P interference filter chip architectures；
The main structure of film layer includes refracting layer and film layer wall, the upper surface depositional coating wall of refracting layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111856639A (en) * | 2020-07-15 | 2020-10-30 | 晋中学院 | All-dielectric ultraviolet filter film |
| CN111999789A (en) * | 2020-08-20 | 2020-11-27 | 晋中学院 | Ultraviolet communication film |
-
2018
- 2018-05-16 CN CN201820723975.0U patent/CN208207265U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111856639A (en) * | 2020-07-15 | 2020-10-30 | 晋中学院 | All-dielectric ultraviolet filter film |
| CN111999789A (en) * | 2020-08-20 | 2020-11-27 | 晋中学院 | Ultraviolet communication film |
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