CN107783218B - Deep ultraviolet band-pass filter and preparation method thereof - Google Patents
Deep ultraviolet band-pass filter and preparation method thereof Download PDFInfo
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- CN107783218B CN107783218B CN201610771577.1A CN201610771577A CN107783218B CN 107783218 B CN107783218 B CN 107783218B CN 201610771577 A CN201610771577 A CN 201610771577A CN 107783218 B CN107783218 B CN 107783218B
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- 238000002360 preparation method Methods 0.000 title description 8
- 239000010408 film Substances 0.000 claims abstract description 69
- 239000010409 thin film Substances 0.000 claims abstract description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 31
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 31
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 31
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 31
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 31
- 238000000576 coating method Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 20
- 238000002310 reflectometry Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 229910052593 corundum Inorganic materials 0.000 claims description 9
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 6
- 239000007888 film coating Substances 0.000 claims description 6
- 238000009501 film coating Methods 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 15
- 230000008021 deposition Effects 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 4
- 239000000284 extract Substances 0.000 abstract description 3
- 238000001028 reflection method Methods 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 13
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 229910002319 LaF3 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/26—Reflecting filters
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optical Filters (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a deep ultraviolet band-pass filter structure, which comprises a substrate and a deep ultraviolet band-pass filter formed on the substrate by an electron beam evaporation coating methodA first film stack, a second film stack; the first film stack comprises a plurality of HfO layers which are alternately plated in sequence2A thin film layer and a plurality of SiO2A thin film layer; the second film stack comprises a plurality of Al layers alternately plated in sequence2O3A thin film layer and a plurality of SiO2A thin film layer; the second film stack is disposed on top of the first film stack. The deep ultraviolet band-pass filter provided by the invention effectively extracts a deep ultraviolet band with high reflectivity by utilizing a multi-reflection method, and effectively inhibits a visible region and a near infrared band with low reflectivity. The filter structure comprises 2 or more than 2 reflection flat plates, and the incident light beam is output after being reflected for 2 times or more than 2 times. Compared with the traditional ultraviolet filter, the filter has the advantages of high ultraviolet band transmittance, wide cut-off range, deep cut-off depth and the like.
Description
Technical Field
The invention relates to a plating process of an optical filter, in particular to a deep ultraviolet band-pass optical filter and a preparation method thereof.
Background
The wave band of 200 nm-350 nm is generally called as deep ultraviolet wave band, and the light in the wave band is widely applied to the fields of air sterilization, formaldehyde treatment, fluorescence excitation, solar blind detection, ultraviolet spectrometer, gas detection and the like in water purification plants, hospitals and dust-free workshops of factories. However, it is not easy to obtain pure energy in deep ultraviolet band in the prior art, especially, the energy is below 300 nm, even in the band around 200 nm, because the natural transparent material in this band is very limited, but the required field of deep ultraviolet band is very extensive and necessary, so it is very necessary to research the energy capable of obtaining pure deep ultraviolet band. In the prior art, a method for obtaining a deep ultraviolet band is to adopt a metal aluminum and medium mixed type film layer combination and realize a band-pass characteristic near 200 nm to 280 nm by an induction method, but the induction type optical filter contains a metal film, and the metal film has relatively serious absorption to light, so that the transmittance in the pass band is very low and is generally below 30%. If a cut-off depth of 0.01% or less is to be obtained outside the pass band, the transmittance is lower, and only about 10% can be achieved. This is not satisfactory for applications where there is an energy requirement and good interference rejection is required. The other approach is to realize high transmittance on the deep ultraviolet band and cut off the region from the visible light to the deep ultraviolet junction through the all-dielectric coating. The method greatly improves the transmittance of a deep ultraviolet region, but has a very limited cut-off range, can only cut off to a visible light region at most, and has extremely high coating difficulty and no much application value.
Disclosure of Invention
The invention provides a deep ultraviolet band-pass filter, which can effectively extract a deep ultraviolet band with high reflectivity by a method of incident beam multiple reflection and effectively inhibit a visible region and a near infrared band with low reflectivity, and simultaneously, the filter structure comprises 2 or more than 2 reflecting flat plates, and light is reflected for 2 or more than 2 times and then output, so that the energy of the deep ultraviolet band with high transmissivity is obtained, and the defects caused by the prior art are overcome. Therefore, the invention also provides a preparation method of the deep ultraviolet band-pass filter.
In order to solve the technical problems, the invention provides the following technical scheme: a deep ultraviolet band-pass filter comprises a substrate, a first film stack and a second film stack, wherein the first film stack and the second film stack are formed on the substrate through an electron beam evaporation coating method;
the first film stack comprises a plurality of HfO layers which are alternately plated in sequence2A thin film layer and a plurality of SiO2A thin film layer;
the second film stack comprises a plurality of Al layers which are alternately plated in sequence2O3A thin film layer and a plurality of SiO2A thin film layer;
the second film stack is disposed on top of the first film stack.
The deep ultraviolet band-pass filter is characterized in that the substrate is a glass substrate.
In the above deep ultraviolet band-pass filter, the first thin film stack includes a plurality of hfos alternately plated in sequence by an electron beam evaporation coating method2A thin film layer and a plurality of SiO2A thin film layer; the second film stack comprises a plurality of Al which are plated in turn by an electron beam evaporation coating method2O3A thin film layer and a plurality of SiO2A thin film layer.
In the above deep ultraviolet band-pass filter, the first film stack includes an equal amount of HfO alternately plated in sequence by an electron beam evaporation coating method2Thin film layer and SiO2A thin film layer; the second film stack comprises equal amount of Al which is plated alternately by an electron beam evaporation coating method in turn2O3Film layer and SiO2A thin film layer.
In the deep ultraviolet band-pass filter, the top of the second film stack is a film-coated surface.
The deep ultraviolet band-pass filter is characterized in that four deep ultraviolet band-pass filters are arranged, and every two of the four deep ultraviolet band-pass filters are arranged in parallel.
In the deep ultraviolet band-pass filter, the incident light and the emergent light of the four deep ultraviolet band-pass filters arranged in parallel are on the same horizontal line, and the light faces the film coating surface in the transmission process.
The preparation method of the deep ultraviolet band-pass filter comprises the step of depositing the HfO on the substrate in sequence and alternately by an electron beam evaporation coating method under a vacuum condition2Thin film layer of the SiO2A film layer, and then sequentially and alternately depositing the Al by an electron beam evaporation coating method under the vacuum condition2O3Thin film layer of the SiO2A thin film layer.
According to the technical scheme of the deep ultraviolet band-pass filter and the preparation method thereof, the effects are as follows: can effectively extract the deep ultraviolet wave band that has high reflectivity through incident light beam multiple reflection's method, and carry out effectual suppression to visible region and near-infrared wave band that have low reflectivity, the light filter structure includes that 2 or more than 2 reflection flat boards constitute simultaneously, and light exports after 2 or more than 2 reflections to obtain the energy of the deep ultraviolet wave band of high transmissivity, be used for solving the defect that prior art leads to.
Drawings
FIG. 1 is a schematic structural diagram of a deep ultraviolet bandpass filter according to a first embodiment of the invention;
FIG. 2 is a diagram of spectral characteristics of a filter film of a deep ultraviolet band-pass filter according to the present invention;
FIG. 3 is a diagram of the output result of the filtering of a deep ultraviolet band pass filter according to the present invention;
FIG. 4 is a schematic structural diagram of a deep ultraviolet bandpass filter according to a third embodiment of the invention;
fig. 5 is a schematic structural diagram of a deep ultraviolet bandpass filter according to a fourth embodiment of the invention.
Wherein the reference numbers are as follows: substrate 101, first thin film stack 102, second thin film stack 103, HfO2 Thin film layer 104, SiO2 Thin film layer 105, Al2O3 Film layer 106, coating surface 201.
Detailed Description
In order to make the technical means, the characteristics, the purposes and the functions of the invention easy to understand, the invention is further described with reference to the specific drawings.
The first embodiment of the invention provides a deep ultraviolet band-pass filter and a preparation method thereof, aiming at obtaining high-transmittance deep ultraviolet band energy through multiple reflections of incident light beams on the filter, effectively inhibiting interference light in a visible region and a near infrared region, and having simple structure and convenient operation.
As shown in fig. 1, a deep ultraviolet band-pass filter includes a substrate 101, and a first thin film stack 102 and a second thin film stack 103 formed on the substrate 101 by an electron beam evaporation coating method, wherein the first thin film stack 102 is an ultraviolet high-reverse filter thin film layer and includes a plurality of HfO2 thin film layers 104 and a plurality of SiO2 thin film layers 105 that are alternately coated in sequence, and the second thin film stack 103 is a visible-region and near-infrared low-reverse filter thin film layer and includes a plurality of Al2O3 thin film layers 106 and a plurality of SiO2 thin film layers 105 that are alternately coated in sequence, and the sequence of the second thin film stack 103 is to be coated on top of the first thin film stack 102 during the coating process, which cannot be reversed.
The invention is based on the principle that the incident light beam is reflected for multiple times on a deep ultraviolet band-pass filter provided with a first film stack 102 and a second film stack 103 to filter out the interference light of a visible region, a near infrared region and the like in the incident light beam, thereby obtaining the deep ultraviolet band energy with high transmittance, and the manufacturing process is as follows:
first, the substrate 101 is placed at 2 × 10-2Passing electrons under vacuum condition of PaAlternately depositing HfO2 film layer 104 and SiO2 film layer 105 in sequence by beam evaporation coating method, and then depositing again at 2 × 10-2The Al2O3 thin film layer 106 and the SiO2 thin film layer 105 are sequentially and alternately deposited by an electron beam evaporation coating method under the vacuum condition Pa, the manufactured deep ultraviolet band-pass filter structure sequentially comprises a substrate 101, a first thin film stack 102 and a second thin film stack 103, and the manufactured film stacks have the following characteristics:
1. the first thin film stack 102 composed of the HfO2 thin film layer 104 and the SiO2 thin film layer 105 can achieve high reflection characteristics of a wave band above 230 nanometers and enable an unnecessary wave band to have low reflection characteristics;
2. the second thin film stack 103 composed of the Al2O3 thin film layer 106 and the SiO2 thin film layer 105 can achieve a high reflection characteristic in a wavelength band of 200 nm to 230nm and make an unnecessary wavelength band have a low reflection characteristic.
The deep ultraviolet band-pass filter provided by the embodiment has the effects that when the deep ultraviolet band-pass filter is used, the required waveband is extracted through multiple reflections of the deep ultraviolet band-pass filter, the deep ultraviolet band-pass filter with the required waveband has high reflectivity, and the unnecessary waveband has low reflectivity.
The substrate 101 adopted by the deep ultraviolet band-pass filter provided by the embodiment is the glass substrate 101, the glass substrate 101 is used as the optimal material by using an electron beam evaporation coating method, the use is convenient, the filter used by the embodiment has higher reflectivity which is generally more than 90%, higher numerical values can be reserved after multiple reflections, the reflectivity of an unnecessary waveband can be reduced to be less than 5%, and the reflectivity can be reduced to be 0% after multiple reflections.
The first film stack 102 in the deep ultraviolet band-pass filter provided by this embodiment includes a plurality of HfO2 film layers 104 and a plurality of SiO2 film layers 105 that are alternately plated in sequence by an electron beam evaporation plating method; the second film stack 103 comprises a plurality of Al2O3 film layers 106 and a plurality of SiO2 film layers 105 which are alternately plated through an electron beam evaporation plating method in sequence, in the embodiment, the first film stack 102 is plated on the substrate 101, then the second film stack 103 is plated, and the top of the second film stack 103 is a plated film surface 201.
Table 1 shows the film structure of the first film stack 102 and the second film stack 103.
Table 1:
the first thin film stack 102 adopted by the deep ultraviolet band-pass filter provided by the embodiment is formed by combining an HfO2 thin film layer 104 and a SiO2 thin film layer 105, the combination of the HfO2 thin film layer 104 and the SiO2 thin film layer 105 has a high refractive index for the deep ultraviolet band, and for the combination of the HfO2 thin film layer 104 and the SiO2 thin film layer 105, an Al thin film layer may be selected2O3With SiO2、Al2O3With MgF2、Al2O3With CaF2、LaF3With MgF2、LaF3With CaF2、LaF3And AlF3And the like, and the combinations also have higher refractive indexes in the deep ultraviolet band.
As can be seen from the spectral characteristic diagram of the filter film of the deep ultraviolet bandpass filter shown in fig. 2 and the output result of the filter film of the deep ultraviolet bandpass filter shown in fig. 3, the reflection of the filter film to the deep ultraviolet light is divided into two parts by the deep ultraviolet bandpass filter provided by the present invention, the first part is a part close to the incident medium, and the part mainly completes the reflection of the region of 200-350 nm, which is realized by the second thin film stack 103, and for the light above 230nm, the light passes through the second thin film stack 103 and enters the second part, which is reflected by the first thin film stack 102 to the ultraviolet light of the region of 230-350 nm.
Second embodiment:
different from the first embodiment, the first film stack 102 adopted by the deep ultraviolet band-pass filter provided by the embodiment includes an equal number of HfO2 film layers 104 and SiO2 film layers 105 which are alternately plated in sequence by an electron beam evaporation plating method; the second film stack 103 comprises an equal number of Al2O3 film layers 106 and SiO2 film layers 105 which are alternately coated by an electron beam evaporation coating method in sequence, and the deep ultraviolet band-pass filter provided by the embodiment has a better light filtering effect.
The third embodiment:
as shown in fig. 4, different from the first embodiment, the deep ultraviolet bandpass filter provided in this embodiment has two pieces, the two pieces of deep ultraviolet bandpass filters are arranged in parallel, the incident light and the emergent light are not on the same horizontal line, and the light is to face the film coating surface 201 during the transmission process.
The fourth embodiment:
as shown in fig. 5, different from the first embodiment, the deep ultraviolet bandpass filter provided in this embodiment has four pieces, each two of the four pieces of deep ultraviolet bandpass filters are arranged in parallel, incident light and emergent light are on the same horizontal line, and light is to face the film coating surface 201 during the transmission process.
In summary, according to the deep ultraviolet band-pass filter and the preparation method thereof of the present invention, the deep ultraviolet band with high reflectivity can be effectively extracted by the incident beam multiple reflection method, and the visible region and the near infrared band with low reflectivity are effectively suppressed, meanwhile, the filter structure includes 2 or more than 2 reflection flat plates, and the light is reflected for 2 or more than 2 times and then output, so as to obtain the energy of the deep ultraviolet band with high transmissivity, and the structure is simple and convenient to operate.
Specific embodiments of the invention have been described above. It is to be understood that the invention is not limited to the particular embodiments described above, in that devices and structures not described in detail are understood to be implemented in a manner common in the art; various changes or modifications may be made by one skilled in the art within the scope of the claims without departing from the spirit of the invention, and without affecting the spirit of the invention.
Claims (2)
1. The deep ultraviolet band-pass filter is characterized by comprising a reflector plate, wherein the reflector plate comprises a substrate, a first film stack and a second film stack which are formed on the substrate through an electron beam evaporation coating method, the first film stack is an ultraviolet high-reflectivity filter film layer and comprises a plurality of HfO (high-reflectivity oxide) layers which are sequentially and alternately plated2A thin film layer and a plurality of SiO2The second film stack is a low-reflection light-filtering film layer in the visible region and the near infrared region and comprises a plurality of sequentially and alternately plated Al layers2O3A thin film layer and a plurality of SiO2A thin film layer, the second film stack being to be plated on top of the first film stack during the plating process; the first film stack comprises an equal amount of HfO which is alternately plated by an electron beam evaporation coating method in turn2Film layer and SiO2A thin film layer; the second film stack comprises equal amount of Al which is plated alternately by an electron beam evaporation coating method in turn2O3Film layer and SiO2A thin film layer; the top of the second film stack is a film coating layer; the substrate is a glass substrate; the reflector plates are provided with two pieces which are arranged in parallel; the incident light and the emergent light of the two parallel reflectors are not on the same horizontal plane, and the light rays are opposite to the film coating surface in the transmission process; or the reflecting sheets are provided with four reflecting sheets, every two of the four reflecting sheets are arranged in parallel, the incident light and the emergent light of the four reflecting sheets which are arranged in parallel are on the same horizontal line, and the light faces the film coating surface in the transmission process.
2. The method of claim 1, wherein the substrate is 2 x 10 times the thickness of the substrate-2Sequentially and alternately depositing HfO by an electron beam evaporation coating method under the vacuum condition pa2Thin film layer, SiO2Film layer, then 2X 10-2pa are sequentially crossed by an electron beam evaporation coating method under the vacuum conditionSubstitutional deposition of Al2O3Thin film layer, SiO2The manufactured deep ultraviolet band-pass filter structure sequentially comprises a substrate, a first film stack and a second film stack.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610771577.1A CN107783218B (en) | 2016-08-31 | 2016-08-31 | Deep ultraviolet band-pass filter and preparation method thereof |
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| CN201610771577.1A CN107783218B (en) | 2016-08-31 | 2016-08-31 | Deep ultraviolet band-pass filter and preparation method thereof |
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| CN107783218B true CN107783218B (en) | 2021-11-09 |
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| CN108387961A (en) * | 2018-05-16 | 2018-08-10 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet spike filter |
| CN108680981B (en) * | 2018-05-16 | 2020-12-01 | 德州尧鼎光电科技有限公司 | Preparation method of deep ultraviolet narrow-band optical filter |
| CN109811304A (en) * | 2019-02-23 | 2019-05-28 | 冯欢心 | A kind of light-transmissive film that high stability is wear-resisting and its application |
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| JPS54103060A (en) * | 1978-01-31 | 1979-08-14 | Fujitsu Ltd | Optical filter |
| JPH04145677A (en) * | 1990-10-08 | 1992-05-19 | Sumitomo Metal Mining Co Ltd | High efficiency reflector for visible laser beam |
| NL1036469A1 (en) * | 2008-02-27 | 2009-08-31 | Asml Netherlands Bv | Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured. |
| DE102008042212A1 (en) * | 2008-09-19 | 2010-04-01 | Carl Zeiss Smt Ag | Reflective optical element and method for its production |
| DE102009054653A1 (en) * | 2009-12-15 | 2011-06-16 | Carl Zeiss Smt Gmbh | Mirror for the EUV wavelength range, substrate for such a mirror, use of a quartz layer for such a substrate, projection lens for microlithography with such a mirror or such a substrate and Projektionsichtung for microlithography with such a projection lens |
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Effective date of registration: 20220106 Address after: 334199 Longmen Road, Shangrao economic and Technological Development Zone, Shangrao City, Jiangxi Province Patentee after: JIANGXI ZHAOJIU PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: 201613 Room 101, No. 5, Lane 111, Shihui Road, Zhongshan street, Songjiang District, Shanghai Patentee before: SHANGHAI MEGA-9 OPTOELECTRONIC CO.,LTD. |