CN107783218A - A kind of deep ultraviolet bandpass filter and preparation method thereof - Google Patents
A kind of deep ultraviolet bandpass filter and preparation method thereof Download PDFInfo
- Publication number
- CN107783218A CN107783218A CN201610771577.1A CN201610771577A CN107783218A CN 107783218 A CN107783218 A CN 107783218A CN 201610771577 A CN201610771577 A CN 201610771577A CN 107783218 A CN107783218 A CN 107783218A
- Authority
- CN
- China
- Prior art keywords
- deep ultraviolet
- film
- bandpass filter
- film layer
- ultraviolet bandpass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 33
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 33
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 33
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 33
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 33
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 115
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 229910052593 corundum Inorganic materials 0.000 claims description 11
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 11
- 230000006854 communication Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 abstract description 7
- 238000002310 reflectometry Methods 0.000 abstract description 6
- 230000000007 visual effect Effects 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 13
- 238000000576 coating method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000000284 extract Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229910002319 LaF3 Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- 241000272525 Anas platyrhynchos Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 235000014347 soups Nutrition 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/26—Reflecting filters
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optical Filters (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of deep ultraviolet bandpass filter chip architecture, wherein, including substrate and the first film heap, the second film stack that are formed at by electron beam evaporation deposition method in substrate；The first film heap includes the several HfO being alternately coated with successively2Film layer and several SiO2Film layer；Second film stack includes the several Al being alternately coated with successively2O3Film layer and several SiO2Film layer；Second film stack is at the top of the first film heap.A kind of deep ultraviolet bandpass filter provided by the invention is effectively extracted the deep ultraviolet band with high reflectance using multiple reflections method, and the visual field with antiradar reflectivity and near infrared band are effectively suppressed.The reflector plate that filter sheet structure includes 2 or more than 2 forms, and incident beam exports after 2 times or more than 2 times reflections.Compared to traditional ultraviolet filter, optical filter of the invention has the advantages that transmitance of ultraviolet band is high, and cutoff range is wide and ends depth depth.
Description
Technical field
The present invention relates to the process for plating of optical filter, and in particular to a kind of deep ultraviolet bandpass filter and preparation method thereof.
Background technology
At 200 nanometers -350 nanometers, this wave band is commonly known as deep ultraviolet band, and the light of this wave band is widely used
In water treatment plant, hospital, the air disinfection of factory's dust-free workshop, processing formaldehyde, fluorescence excitation, day blind detection, ultraviolet spectrometer, gas
The fields such as body detection.But the energy not a duck soup of pure deep ultraviolet band is gone in existing technology, more particularly to
To less than 300 nanometers, or even the wave band in 200 nms, because nature is very limited in the transparent material of this wave band,
But the field required for deep ultraviolet band extensively and is necessary very much, pure dark purple external wave is obtained so working out and can realize
The energy of section is necessary.A kind of method of approach acquisition deep ultraviolet band in the prior art be present is to use metallic aluminium
The method that induction is combined and through with medium mixed type film layer realizes the bandpass characteristics of 200 nanometer of -280 nm, but this
For the optical filter of kind of induction type due to containing metal film, metal film is more serious to the absorptance of light, thus passband transmitance very
It is low, typically below 30%.If obtain beyond passband less than 0.01% cut-off depth, transmitance can be lower, Zhi Nengda
To 10% or so.This is for there is energy size requirements to need good jamproof application scenario not meet again.Another way
It is that height is realized thoroughly to deep ultraviolet band by the plated film of all dielectric, the region that dark purple diplomatic circles is arrived below visible ray is realized and cut
Only.This method is to have great lifting to the transmitance of dark purple outskirt, but cutoff range is very limited, at most can only be by the end of
Visible region, and the difficulty of plated film is abnormal height, without too many application value.
The content of the invention
, can be multiple by incident beam the technical problem to be solved in the present invention is to provide a kind of deep ultraviolet bandpass filter
The method of reflection effectively extracts the deep ultraviolet band with high reflectance, and to the visual field with antiradar reflectivity and closely
Infrared band is effectively suppressed, while filter sheet structure includes the reflector plate composition of 2 or more than 2, and light passes through 2
Export after secondary or more than 2 times reflections, so as to obtain the energy of the deep ultraviolet band of high transmittance, cause to solve prior art
The defects of.Therefore, the present invention also provides the preparation method of the deep ultraviolet bandpass filter.
Following technical scheme is provided to solve the above-mentioned technical problem present invention：A kind of deep ultraviolet bandpass filter, wherein,
The first film heap, the second film stack being formed at including substrate and by electron beam evaporation deposition method in the substrate；
The first film heap includes the several HfO being alternately coated with successively2Film layer and several SiO2Film layer；
Second film stack includes the several Al being alternately coated with successively2O3Film layer and several SiO2Film layer；
Second film stack is at the top of the first film heap.
A kind of above-mentioned deep ultraviolet bandpass filter, wherein, the substrate is substrate of glass.
A kind of above-mentioned deep ultraviolet bandpass filter, wherein, the first film heap includes passing sequentially through electron beam evaporation
Several HfO that coating method is alternately coated with2Film layer and several SiO2Film layer；Second film stack includes passing sequentially through electronics
Several Al that beam evaporation coating method is alternately coated with2O3Film layer and several SiO2Film layer.
A kind of above-mentioned deep ultraviolet bandpass filter, wherein, the first film heap includes passing sequentially through electron beam evaporation
Coating method alternately be coated with etc. quantity HfO2Film layer and SiO2Film layer；Second film stack includes passing sequentially through electron beam
Evaporation coating method alternately be coated with etc. quantity Al2O3Film layer and SiO2Film layer.
A kind of above-mentioned deep ultraviolet bandpass filter, wherein, the top of second film stack is coated surface.
A kind of above-mentioned deep ultraviolet bandpass filter, wherein, the deep ultraviolet bandpass filter is provided with two panels, described in two panels
Deep ultraviolet bandpass filter is to be arranged in parallel.
A kind of above-mentioned deep ultraviolet bandpass filter, wherein, the deep ultraviolet bandpass filter that two panels be arranged in parallel
Incident light is with emergent light or not same horizontal line, and light will be against coated surface in communication process.
A kind of above-mentioned deep ultraviolet bandpass filter, wherein, the deep ultraviolet bandpass filter is provided with four, described in four
Deep ultraviolet bandpass filter is to be arranged in parallel two-by-two.
A kind of above-mentioned deep ultraviolet bandpass filter, wherein, four deep ultraviolet bandpass filters be arrangeding in parallel two-by-two
The incident light of piece and emergent light are in same horizontal line, and light will be against coated surface in communication process.
A kind of preparation method of above-mentioned deep ultraviolet bandpass filter, wherein, the substrate passes through under conditions of vacuum
Electron beam evaporation deposition method HfO described in alternating deposit successively2Film layer, the SiO2Film layer, then again under conditions of vacuum
Pass through Al described in electron beam evaporation deposition method successively alternating deposit2O3Film layer, the SiO2Film layer.
Effect according to a kind of deep ultraviolet bandpass filter of the invention described above and preparation method thereof technical scheme is：It can lead to
The method for crossing incident beam multiple reflections effectively extracts the deep ultraviolet band with high reflectance, and to low reflection
The visual field and near infrared band of rate are effectively suppressed, while filter sheet structure includes the reflector plate of 2 or more than 2
Composition, light exports after 2 times or more than 2 times reflections, so as to obtain the energy of the deep ultraviolet band of high transmittance, to solve
The defects of certainly prior art causes.
Brief description of the drawings
Fig. 1 is a kind of structural representation of deep ultraviolet bandpass filter first embodiment of the present invention；
Fig. 2 is a kind of filter coating spectrum character diagram of deep ultraviolet bandpass filter of the present invention；
Fig. 3 is the output result figure that a kind of deep ultraviolet bandpass filter of the present invention filters；
Fig. 4 is a kind of structural representation of deep ultraviolet bandpass filter 3rd embodiment of the present invention；
Fig. 5 is a kind of structural representation of deep ultraviolet bandpass filter fourth embodiment of the present invention.
Wherein, reference is as follows：Substrate 101, the first film heap 102, the second film stack 103, HfO2Film layer 104,
SiO2Film layer 105, Al2O3Film layer 106, coated surface 201.
Embodiment
In order that technological means, creation feature, reached purpose and effect that invention is realized are easy to understand, lower combination tool
Body illustrates, and the present invention is expanded on further.
The first embodiment of the present invention is to provide a kind of deep ultraviolet bandpass filter and preparation method thereof, it is therefore an objective to by entering
Multiple reflections of the irradiating light beam on optical filter, obtain the deep ultraviolet band energy of high transmittance, while effectively suppressing visible
Area and the interference light of near infrared region, it is simple in construction, it is easy to operation.
As shown in figure 1, a kind of deep ultraviolet bandpass filter, wherein, including substrate 101 and pass through electron beam evaporation deposition
Method is formed at the first film heap 102, the second film stack 103 in substrate 101, and the first film heap 102 is that ultraviolet high anti-filter light is thin
Film layer, including the several HfO2 film layers 104 being alternately coated with successively and several SiO2 film layers 105, the second film stack 103 is can
See the low anti-filter optical thin film floor in area and near infrared region, including the several Al2O3 film layers 106 and several SiO2 that are alternately coated with successively are thin
Film layer 105, the second film stack 103 will be sputtered at the top of the first film heap 102 during being coated with, sequentially can not phase
Instead.
The present invention is in the deep ultraviolet band logical filter provided with the film stack 103 of the first film heap 102 and second based on incident beam
It is high saturating so as to obtain on mating plate after multiple reflections filter out the interference light of visual field in incident beam, near infrared region etc.
The principle of the deep ultraviolet band energy of rate is crossed, its manufacturing process is as follows：
First by substrate 101 2 × 10-2Pass through electron beam evaporation deposition method successively alternating deposit HfO2 under Pa vacuum condition
Film layer 104, SiO2 film layers 105, then again 2 × 10-2Under Pa vacuum condition by electron beam evaporation deposition method successively
Alternating deposit Al2O3 film layers 106, SiO2 film layers 105, the deep ultraviolet bandpass filter chip architecture made are followed successively by substrate
101st, the first film heap 102, the second film stack 103 and the membrane stack made possess following characteristics：
1. the first film heap 102 being made up of HfO2 film layers 104 and SiO2 film layers 105 can complete 230 nanometers with upper ripple
The high reflection characteristic of section, and make unwanted wave band that there is low reflection characteristic；
2. the second film stack 103 being made up of Al2O3 film layers 106, SiO2 film layers 105 can complete 200 nanometers and be received to 230
The high reflection characteristic of VHF band, and make unwanted wave band that there is low reflection characteristic.
A kind of effect for deep ultraviolet bandpass filter that the present embodiment provides is when in use by deep ultraviolet bandpass filter
Piece multiple reflections extract required wave band, have higher reflection to required wave band deep ultraviolet bandpass filter
Rate, without wave band there is relatively low reflectivity.
The substrate 101 that a kind of deep ultraviolet bandpass filter that the present embodiment provides uses is substrate of glass 101, substrate of glass
101, as using the optimal material of electron beam evaporation deposition method, are easy to use, the optical filter that the present embodiment utilizes has higher
Reflectivity, typically more than 90%, higher numerical value can also be retained after multiple reflections, and can not will need wave band
Reflectivity is reduced to less than 5%, and 0% can be dropped to after multiple reflections.
The first film heap 102 in a kind of deep ultraviolet bandpass filter that the present embodiment provides includes passing sequentially through electron beam
Several HfO2 film layers 104 that evaporation coating method is alternately coated with and several SiO2 film layers 105；Second film stack 103 include according to
It is secondary to pass through several Al2O3 film layers 106 that electron beam evaporation deposition method is alternately coated with and several SiO2 film layers 105, this implementation
Example be by being first coated with the first film heap 102 in substrate 101 after, then be coated with the second film stack 103, the second film stack 103
Top is coated surface 201.
Table 1 is the film layer structure of the specific film stack 103 of the first film heap 102 and second.
Table 1：
The present embodiment provide a kind of deep ultraviolet bandpass filter used by the first film heap 102 be HfO2 film layers 104 with
SiO2 film layers 105 combine, the combination of the HfO2 film layers 104 and SiO2 film layers 105 have to deep ultraviolet band compared with
High refractive index, the combination for HfO2 film layers 104 and SiO2 film layers 105 are also an option that Al2O3With SiO2、Al2O3With
MgF2、Al2O3With CaF2、LaF3With MgF2、LaF3With CaF2、LaF3With AlF3It is replaced Deng combination, these combinations are same right
Deep ultraviolet band has higher refractive index.
A kind of deep ultraviolet bandpass filter filter coating spectrum character diagram as shown in Figure 2 and a kind of deep ultraviolet shown in Fig. 3
The output result that bandpass filter filters can be seen that a kind of deep ultraviolet bandpass filter provided by the invention by optical filter to depth
The reflection of ultraviolet light is divided into two parts, and first part is proximate to the part of incident medium, the main completion pair of this part
The reflection in 200-230nm regions, this is realized by the second film stack 103, for more than 230nm light, through second
Film stack 103, enters the second part, and this part is by the first film heap 102, to the ultraviolet light in 230-350nm regions
Reflected.
Second embodiment：
The first film heap 102 that a kind of deep ultraviolet bandpass filter that the present embodiment unlike first embodiment provides uses
Including passing sequentially through quantity HfO2 film layers 104 and the SiO2 film layers 105 such as what electron beam evaporation deposition method was alternately coated with；Second
Film stack 103 includes passing sequentially through quantity Al2O3 film layers 106 and the SiO2 films such as what electron beam evaporation deposition method was alternately coated with
Layer 105, a kind of deep ultraviolet bandpass filter that this embodiment is provided has more preferable filter effect.
3rd embodiment：
As shown in figure 4, a kind of deep ultraviolet bandpass filter that the present embodiment unlike first embodiment provides is provided with two panels,
Two panels deep ultraviolet bandpass filter is be arranged in parallel, and incident light is with emergent light not in same horizontal line, and light is in communication process
In will be against coated surface 201.
Fourth embodiment：
As shown in figure 5, a kind of deep ultraviolet bandpass filter that the present embodiment unlike first embodiment provides is provided with four,
Four deep ultraviolet bandpass filters is be arranged in parallel two-by-two, and incident light and emergent light are in same horizontal line, and light is being propagated through
Will be against coated surface 201 in journey.
To sum up, a kind of deep ultraviolet bandpass filter of the invention and preparation method thereof, can be repeatedly anti-by incident beam
The method penetrated effectively extracts the deep ultraviolet band with high reflectance, and to the visual field with antiradar reflectivity and near red
Wave section is effectively suppressed, while filter sheet structure includes the reflector plate composition of 2 or more than 2, and light passes through 2 times
Or exported after more than 2 times reflections, it is simple in construction so as to obtain the energy of the deep ultraviolet band of high transmittance, it is easy to operation.
The specific embodiment of invention is described above.It is to be appreciated that invention be not limited to it is above-mentioned specific
Embodiment, wherein the equipment and structure be not described in detail to the greatest extent are construed as being practiced with the common mode in this area；
Those skilled in the art can make within the scope of the claims various deformations or amendments make it is some it is simple deduce, deformation or
Replace, this has no effect on the substantive content of invention.
Claims (10)
1. a kind of deep ultraviolet bandpass filter, it is characterised in that be formed at including substrate and by electron beam evaporation deposition method
The first film heap, the second film stack in the substrate；
The first film heap includes the several HfO being alternately coated with successively2Film layer and several SiO2Film layer；
Second film stack includes the several Al being alternately coated with successively2O3Film layer and several SiO2Film layer；
Second film stack is at the top of the first film heap.
2. a kind of deep ultraviolet bandpass filter as claimed in claim 1, it is characterised in that the substrate is substrate of glass.
3. a kind of deep ultraviolet bandpass filter as claimed in claim 1, it is characterised in that the first film heap is included successively
The several HfO being alternately coated with by electron beam evaporation deposition method2Film layer and several SiO2Film layer；The second film stack bag
Include and pass sequentially through several Al that electron beam evaporation deposition method is alternately coated with2O3Film layer and several SiO2Film layer.
4. a kind of deep ultraviolet bandpass filter as claimed in claim 3, it is characterised in that the first film heap is included successively
By electron beam evaporation deposition method alternately be coated with etc. quantity HfO2Film layer and SiO2Film layer；Second film stack includes
Pass sequentially through electron beam evaporation deposition method alternately be coated with etc. quantity Al2O3Film layer and SiO2Film layer.
5. a kind of deep ultraviolet bandpass filter as claimed in claim 1, it is characterised in that the top of second film stack is
Coated surface.
6. a kind of deep ultraviolet bandpass filter as claimed in claim 1, it is characterised in that the deep ultraviolet bandpass filter is set
There is two panels, deep ultraviolet bandpass filter described in two panels is to be arranged in parallel.
7. a kind of deep ultraviolet bandpass filter as claimed in claim 6, it is characterised in that two panels be arranged in parallel described dark purple
The incident light of outer bandpass filter is with emergent light or not same horizontal line, and light will be against coated surface in communication process.
8. a kind of deep ultraviolet bandpass filter as claimed in claim 1, it is characterised in that the deep ultraviolet bandpass filter is set
There are four, four deep ultraviolet bandpass filters are to be arranged in parallel two-by-two.
A kind of 9. deep ultraviolet bandpass filter as claimed in claim 8, it is characterised in that four be arranged in parallel two-by-two it is described
The incident light of deep ultraviolet bandpass filter and emergent light are in same horizontal line, and light will be against plated film in communication process
Face.
A kind of 10. preparation method of deep ultraviolet bandpass filter as described in claim any one of 1-9, it is characterised in that institute
Substrate is stated under conditions of vacuum by HfO described in electron beam evaporation deposition method successively alternating deposit2Film layer, the SiO2It is thin
Film layer, then pass through Al described in electron beam evaporation deposition method successively alternating deposit under conditions of vacuum again2O3It is film layer, described
SiO2Film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610771577.1A CN107783218B (en) | 2016-08-31 | 2016-08-31 | Deep ultraviolet band-pass filter and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610771577.1A CN107783218B (en) | 2016-08-31 | 2016-08-31 | Deep ultraviolet band-pass filter and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107783218A true CN107783218A (en) | 2018-03-09 |
| CN107783218B CN107783218B (en) | 2021-11-09 |
Family
ID=61450311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610771577.1A Active CN107783218B (en) | 2016-08-31 | 2016-08-31 | Deep ultraviolet band-pass filter and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107783218B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108387961A (en) * | 2018-05-16 | 2018-08-10 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet spike filter |
| CN108680981A (en) * | 2018-05-16 | 2018-10-19 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet narrow-band-filter piece preparation method |
| CN109811304A (en) * | 2019-02-23 | 2019-05-28 | 冯欢心 | A kind of light-transmissive film that high stability is wear-resisting and its application |
| JP2022504163A (en) * | 2018-10-05 | 2022-01-13 | スリーエム イノベイティブ プロパティズ カンパニー | Multilayer optical film and articles containing it |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54103060A (en) * | 1978-01-31 | 1979-08-14 | Fujitsu Ltd | Optical filter |
| JPH04145677A (en) * | 1990-10-08 | 1992-05-19 | Sumitomo Metal Mining Co Ltd | High efficiency reflector for visible laser beam |
| CN101960338A (en) * | 2008-02-27 | 2011-01-26 | Asml荷兰有限公司 | The device of optical element, the lithographic equipment that comprises this optical element, device making method and manufacturing |
| CN102159997A (en) * | 2008-09-19 | 2011-08-17 | 卡尔蔡司Smt有限责任公司 | Reflective optical element and methods for producing same |
| CN102713690A (en) * | 2009-12-15 | 2012-10-03 | 卡尔蔡司Smt有限责任公司 | Mirror for the EUV wavelength range, substrate for such a mirror, projection objective for microlithography comprising such a mirror or such a substrate, and projection exposure apparatus for microlithography comprising such a projection objective |
-
2016
- 2016-08-31 CN CN201610771577.1A patent/CN107783218B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54103060A (en) * | 1978-01-31 | 1979-08-14 | Fujitsu Ltd | Optical filter |
| JPH04145677A (en) * | 1990-10-08 | 1992-05-19 | Sumitomo Metal Mining Co Ltd | High efficiency reflector for visible laser beam |
| CN101960338A (en) * | 2008-02-27 | 2011-01-26 | Asml荷兰有限公司 | The device of optical element, the lithographic equipment that comprises this optical element, device making method and manufacturing |
| CN102159997A (en) * | 2008-09-19 | 2011-08-17 | 卡尔蔡司Smt有限责任公司 | Reflective optical element and methods for producing same |
| CN102713690A (en) * | 2009-12-15 | 2012-10-03 | 卡尔蔡司Smt有限责任公司 | Mirror for the EUV wavelength range, substrate for such a mirror, projection objective for microlithography comprising such a mirror or such a substrate, and projection exposure apparatus for microlithography comprising such a projection objective |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108387961A (en) * | 2018-05-16 | 2018-08-10 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet spike filter |
| CN108680981A (en) * | 2018-05-16 | 2018-10-19 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet narrow-band-filter piece preparation method |
| CN108680981B (en) * | 2018-05-16 | 2020-12-01 | 德州尧鼎光电科技有限公司 | Preparation method of deep ultraviolet narrow-band optical filter |
| JP2022504163A (en) * | 2018-10-05 | 2022-01-13 | スリーエム イノベイティブ プロパティズ カンパニー | Multilayer optical film and articles containing it |
| US12001036B2 (en) | 2018-10-05 | 2024-06-04 | 3M Innovative Properties Company | Multilayer optical films and articles comprising the same |
| CN109811304A (en) * | 2019-02-23 | 2019-05-28 | 冯欢心 | A kind of light-transmissive film that high stability is wear-resisting and its application |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107783218B (en) | 2021-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107783218A (en) | A kind of deep ultraviolet bandpass filter and preparation method thereof | |
| EP2872935B1 (en) | Optical filter and sensor system | |
| CN105022106B (en) | The ultra wide band absorber and preparation method of a kind of visible near-infrared wave band | |
| CN101893729B (en) | Intermediate infrared bandpass filter and preparation method thereof | |
| KR102187048B1 (en) | Infrared band pass filter | |
| CN108680981A (en) | A kind of deep ultraviolet narrow-band-filter piece preparation method | |
| CN109557604B (en) | Ultraviolet-resistant antireflection film and application thereof | |
| CN111856639B (en) | All-dielectric ultraviolet filter film | |
| CN108387961A (en) | A kind of deep ultraviolet spike filter | |
| DE602004005571T2 (en) | Clear aluminum-titanium oxide coating and / or alumina coating with a rutile structure | |
| CN108291988B (en) | Nano double-material electromagnetic spectrum frequency shifter | |
| CN201378210Y (en) | Short-wave pass filter in ultra-wide cut-off region | |
| JP2020507546A (en) | Low reflection coating glass | |
| CN205501124U (en) | Subtract anti - membrane glass | |
| CN210506093U (en) | Antireflection film and antireflection glass | |
| DE602004009667T2 (en) | TRANSPARENT ZIRCONIUM OXIDE TANTAL AND / OR TANTALO OXIDE COATING | |
| TW201504033A (en) | Infrared filter | |
| CN105511003A (en) | High-performance optical filter production and processing technology | |
| CN208207265U (en) | A kind of deep ultraviolet narrow band filter | |
| JP2021056455A (en) | Infrared bandpass filter structure and infrared bandpass filter applying the same | |
| DE102019127139B3 (en) | Infrared band pass filter structure and infrared band pass filter with this infrared band pass filter structure | |
| CN104020519A (en) | UV film filter | |
| JP2009276447A (en) | Polarizer and liquid crystal projector | |
| US11169309B2 (en) | Infrared bandpass filter having silicon aluminum hydride layers | |
| GB2588135A (en) | Infrared bandpass filter structure and infrared bandpass filter using the structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220106 Address after: 334199 Longmen Road, Shangrao economic and Technological Development Zone, Shangrao City, Jiangxi Province Patentee after: JIANGXI ZHAOJIU PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: 201613 Room 101, No. 5, Lane 111, Shihui Road, Zhongshan street, Songjiang District, Shanghai Patentee before: SHANGHAI MEGA-9 OPTOELECTRONIC CO.,LTD. |