CN108387961A - A kind of deep ultraviolet spike filter - Google Patents
A kind of deep ultraviolet spike filter Download PDFInfo
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- CN108387961A CN108387961A CN201810465400.8A CN201810465400A CN108387961A CN 108387961 A CN108387961 A CN 108387961A CN 201810465400 A CN201810465400 A CN 201810465400A CN 108387961 A CN108387961 A CN 108387961A
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/26—Reflecting filters
Abstract
The invention belongs to thin film optical technology fields,It is related to a kind of deep ultraviolet spike filter,Agent structure includes basal layer,Filter layer,Film layer and protective layer,The transmission filter combined to metal medium using the design concept of F P bandpass filters is designed,Tandem arrangement metal-dielectric filter is selected to inhibit the bypass belt of long-wavelength region,Bandwidth is reduced using all dielectric optical filter,Tandem arrangement forms F P optical filters simple in structure with the multi-layer film structure that high-index material/low-index material forms on double half-wave F P interferometric filter architecture basics,In wave band,Realize that the depth in specific deep ultraviolet band is ended,By the shape for changing filter layer,The half-band width of deep ultraviolet spike filter can be reduced,Selected film layer is set to be separated from membrane system,The group of entire membrane system shares two selected effective interfaces to indicate,As long as considering to select the beam interference in film layer,The optical characteristics of multilayer film can acquire,The method for obtaining design membrane system.
Description
Technical field：
The invention belongs to thin film optical technology fields, are related to a kind of deep ultraviolet spike filter, the optical filter bandwidth of preparation
Narrow and transmitance is high, can realize the depth cut-off of broad range, solve deep ultraviolet filtering problem.
Background technology：
Optical filter is the optical device for choosing required radiation wave band, and the general character of optical filter is exactly no any optical filter
The imaging of celestial body can be allowed to become brighter, because all optical filters can all absorb certain wavelength, to make object become darker.
Optical filter is that plastics or sheet glass add special dye and make, and Red lightscreening plate can only allow feux rouges to pass through, and so analogize, glass
The transmissivity of glass piece is originally similar with air, and all colored lights can pass through, so being transparent, but contaminate dyestuff
Afterwards, molecule structure change, refractive index also change, and to certain coloured light by just changing, for example beam of white light passes through
Blue color filter, injection is a branch of blue light, and green light, feux rouges are few, most of to be absorbed by optical filter.The effect of optical filter
It is very big, it is widely used in photographic circle, the landscape painting of some photographies great master's shooting, why main scape is always so prominent, is how to do
It arrivesThis has just used optical filter, for example you want to be started auction a chrysanthemum with camera, and background is blue sky, greenery, if according to usual
It claps, " chrysanthemum " this theme cannot be protruded, because the image of chrysanthemum is not prominent enough, still, if putting a Huang before camera lens
Colo(u)r filter stops the green light that a part of greenery scatter and the blue light that blue sky scatters, and the yellow light for allowing chrysanthemum to scatter is big
Amount passes through, in this way, chrysanthemum just seems fairly obvious, highlights " chrysanthemum " this theme.Optical filtering flake products mainly press spectrum wave
The modes such as section, spectral characteristic, film material, application characteristic are classified：It is divided into ultraviolet filter, vision filter according to spectral band
And infrared fileter；According to spectral characteristic be divided into bandpass filter (light of selected wave band passes through, the light cut-off other than passband,
Optical index is mainly centre wavelength CWL and half-band width FWHM, is divided into narrowband and broadband, such as 808 optical filter NBF- of narrowband
808), edge filter, light splitting optical filter, neutral-density filter and reflection filter；It is divided into mantle filter according to film material
Mating plate and dura mater optical filter, in terms of dura mater optical filter refers not only to film hardness, it is often more important that its laser damage threshold, so
It is widely used in laser system, and thin-skinned film optical filters are then mainly used in Biochemical Analyzer.
The basic theory of optical thin film, which is built upon, to be derived on the basis of Theory of Electromagnetic Field and Maxwell equation,
The optical characteristics for studying membrane system is exactly propagation of the studying plane electromagnetic wave by layered medium for theoretical point view.Cause
This, the most efficient method of processing film problem is exactly to solve Maxwell equation, with Maxwell equation and three substance equations
For fundamental formular, the wave equation of electromagnetic wave has been obtained by mathematical derivation, it is as follows for nonconducting uniform dielectric：
When plane electromagnetic wave is with angular frequency, when along direction vector k propagation distances being that radius vector r is propagated, equation (2-1) with
The solution of (2-2) is：
Electric field E and magnetic field H are mutually perpendicular to, each vertical with the direction of propagation K0 of wave, meet dextrorotation rule.From max
The electromagnetic theory fundamental formular of Wei is set out, and the numerical relation between H and E can be obtained by mathematical derivation by formula (1-1) and (1-3)
For：
Wherein Y is known as the optical admittance of medium, and meaning is the ratio of electric field strength and magnetic field intensity.μ0For magnetic conductivity, ε0
For dielectric constant.In optical band, μrIt is sufficiently close to 1.
In incident medium, advanced and negative direction two kinds of waves of traveling by positive direction.Symbolically one and two as shown in Figure 6
Each component of medium.According to the integrated form of Maxwell equation, tangential direction of the light on interface can be released and be continuous,
For monofilm, application boundary condition can be written on interface：
Formula can be obtained by deriving：
Optically, the property for being in the homogeneous dielectric film between two uniform medias is especially important, it is assumed that all
Medium is all nonmagnetic (μr=1) monofilm equivalent interface as shown in Figure 7, is obtained, whereinAt interface 1, can be obtained according to boundary condition：
The electric field schematic diagram of monofilm using matrix form expression as shown in figure 8, can be obtained：
Wherein, the position phase thickness of matrix is：
I.e.So understanding：
Wherein, it can be write as using boundary condition for interface 2：
The form for being write as matrix is：
The assemblage characteristic matrix of substrate and film is simultaneously：
The case where can be generalized to multilayer film according to the above-mentioned analysis to monofilm and calculating, the eigenmatrix of multilayer film
For：
Its phase thickness：
The calculation formula of this multilayer film is suitable for the calculating of all film layer characteristics.
A kind of near-infrared spike filter packet for somatosensory recognition system disclosed in Chinese patent 201210548652.X
It includes substrate and is located at the main membrane system of spike filter and cut-off membrane system of two opposing surface of the substrate, the spike filter
Main membrane system and cut-off membrane system are respectively alternately stacked by high refractive index layer and low-index film, the high refractive index film
Layer and low-index film deposit to be formed by vacuum coating method, the passband center wavelengths of the main membrane system of spike filter with
Somatosensory recognition system infrared emission light source centre wavelength is consistent；The main membrane system of spike filter is that long wave leads to membrane stack and short-pass
The structure of membrane stack superposition, the passband center wavelengths of the main membrane system of spike filter are 850nm, passband width be 20nm~
50nm；The cut-off membrane system is that long wave leads to film stacking structure, and the cutoff range of the cut-off membrane system is 400nm~630nm, passband model
It encloses for 750nm~1000nm；The long wave leads to membrane stack and is added by the basic membrane stack that multiple structure types are 0.5HL0.5H,
The short-pass membrane stack is added by the basic membrane stack that multiple structure types are 0.5LH0.5L, wherein H represents high refractive index
Film layer, L represent low-index film；Total film layer number of the main membrane system of spike filter is 40 layers~55 layers, the cut film
Total film layer number of system is 30 layers~45 layers；A kind of short-wave infrared spike filter disclosed in Chinese patent 201610971376.6
Including：Substrate and positive membrane system A/ (HL) ^4L (HL) ^8L (HL) ^8L (HL) ^4 being formed in substrate both side surface
1.64H0.64L/S and reverse side membrane system A/ (0.5HL0.5H) ^11 α (0.5HL0.5H) ^12 β (0.5LH0.5L) ^7 γ
(0.5LH0.5L) ^10 ω (0.5LH0.5L) ^10/S, the symbol meaning in membrane system：A is air, and S is H-K9L substrate of glass, H
Two titaniums are aoxidized for high-index material five, L is low-index material silica, and α, β, γ and ω indicate each membrane system center respectively
The multiple of wavelength and centre wavelength；A kind of broadband cut-off ultra-narrow band pass filter disclosed in Chinese patent 201611007468.9 includes
Two surfaces of substrate, the substrate are denoted as the faces A and the faces B respectively, and the faces A and the faces B all have laminated reflective film, in institute
It states on the faces A and is with broadband light cutoff filter film, film structure：Substrate/α i (0.5HL0.5H) ^a α i-1 (0.5HL0.5H) ^
A... (0.5HL0.5H) ^a of α 1 β 1 (0.5LH0.5L) ^b β 2 (0.5LH0.5L) ^b... β j (0.5LH0.5L) ^b/ air,
Middle H is high-index material, and L is low-index material, α i=0.8 α i-1 ..., α 2=0.8 α 1, α 1=0.8, β 1=1.2, β
2=1.2 β 1 ..., β j=1.2 β j-1；Selection i and j values are wherein required according to cut off band width, selection a is required according to cut-off degree
With b values；Have ultra-narrow with light filter film on the faces B, film structure is：Substrate/L (HL) ^mnH (LH) ^mL (HL) ^mnH
(LH) ^mLHL/ air requires selection m and n values according to bandwidth of the ultra-narrow with light filter film and cut-off degree；Chinese patent
201710421753.3 a kind of disclosed spike filter film plating process includes the following steps：S1：The one of blank glass substrate
Side surface is coated with main film membrane stack, so that said primary membrane membrane stack is constituted equivalent substrate with blank glass substrate, the equivalent substrate is in
The equivalent refractive index of cardiac wave strong point is equal with the blank glass substrate refractive index；S2：It plates one side surface of the equivalent substrate
The secondary film membrane stack of system first is coated with the second secondary film membrane stack in another side surface；It is a kind of disclosed in Chinese patent 201720097206.X
Height ends, the quasi- rectangle spike filter of low ripple includes substrate and is separately positioned on the main membrane system of substrate both sides and cut film
System, main membrane system and cut-off membrane system are made of three reset cycle films of the Fabry-Perot filter of four different equivalent refractive index,
Main membrane system is preferably G [(HL) ^4H2L3H (LH) ^4L (HL) ^5H2LH (LH) ^5 L (HL) ^5H2L3H (LH) ^5L (HL) ^
4H2L3H (LH) ^4L] 3A, wherein H and L indicates the high refractive index film and low refractive index film of quarter-wave film thickness respectively, high
Refractive index film is titanium oxide, niobium oxide or tantalum oxide, and low refractive index film is silica；Chinese patent 201611192856.9 is public
Open it is a kind of for Middle and upper atmosphere wind field on daytime observation ultra-narrow band pass filter include：It combines the interferometric filter placed and consolidates
State F-P etalons；Wherein, the interferometric filter is for tentatively inhibiting bias light；The solid-state F-P etalons are whole for controlling
The bandwidth of body optical filter, the solid-state F-P etalons are according to principle of interference, using two blocks of parallel glass plates or quartz plate
Composition, after incident light is irradiated to etalon, will produce interference fringe in exit end；The optical filter that above-mentioned patent is related to is narrowband
Optical filter, the main function of spike filter are to carry out optical electivity to light, so that the light of needs is passed through, the light of unwanted wavelength
Ended, spike filter is epochmaking optical component in photovoltaic applications and laser technology, it is desirable that it is with good light
And mechanical performance, as centre wavelength is with good stability, peak transmittance is high, cut-off inhibits ratio, film layer tool with high
There are good uniformity and firmness etc.；Deep ultraviolet optical filter can eliminate visible and ultra-violet (UV) band veiling glare, in spectroscopy, swash
Many fields such as light, astrophysics have a wide range of applications；There is presently no the spike filters applied to deep ultraviolet band.
Therefore, a kind of deep ultraviolet spike filter of R ＆ D design and preparation method thereof, to prepare narrow bandwidth and the high optical filter of transmitance,
The depth cut-off for realizing broad range, solves deep ultraviolet filtering problem, has good society and economic value, application prospect wide
It is wealthy.
The rejection zone of all dielectric bandpass filter is relatively narrow, but is only effective, alldielectric narrowband filter in finite region
Highly reflecting films have reflection bandwidth, so filter transmission peak value both sides will appear bypass belt.In most applications, must
Bypass belt must be curbed：As long as usual shortwave bypass belt is superimposed a block length wave on optical filter, logical heat absorbing glass optical filter is made a return journey
Fall, although short-pass heat absorbing glass optical filter can effectively inhibit long wave to lead to sideband, transmissivity is too low in terms of its shortwave, reduces
The peak transmittance of whole membrane system, and optical filter cut-off is very difficult in the range of 200nm-250nm, because
Without short-pass heat absorbing glass optical filter in this spectral region.There are two types of cut-off methods for current research, and one is increase gold
Category-dielectric filter, another kind are that speculum of connecting with optical filter is ended, level-one minor metal-medium Fabry-Perot Luo filter
The advantages of mating plate is exactly not have long wave bypass belt, the disadvantage is that peak transmission is very low, half width is just very big, so that cut-off degree and leading to
Belt shape can not use.
Invention content：
It is an object of the invention to overcome disadvantage of the existing technology, a kind of deep ultraviolet spike filter of R ＆ D design,
It prepares a kind of narrow bandwidth and transmitance is high, can realize the depth cut-off of broad range, solve the optical filtering of deep ultraviolet filtering problem
Piece.
To achieve the goals above, the agent structure of deep ultraviolet spike filter of the present invention includes basal layer, filter
Mating plate layer, film layer and protective layer；The surface of basal layer deposits the filter layer for the F-P cavity that haves three layers, the table of top layer's filter layer
Face deposition has the film layer of 2n-1 (n is the integer more than 1) layer prefect dielectric multi-cavity optical filter, and matcoveredn is plated on the surface of film layer；Base
The material of bottom and protective layer includes MgF2(magnesium fluoride), LiF (lithium fluoride), SiO2(quartz), K9 glass and JGS1 (quartzy glass
Glass piece)；The agent structure of filter layer includes filter layer wall and reflecting layer, and the upper surface in reflecting layer deposits filter layer
Wall, filter layer are double half-wave F-P interference filters chip architecture (reflecting layer/filter layer wall/reflecting layer/optical filter
Interlayer interlayer/reflecting layer/filter layer wall)；The agent structure of film layer includes refracting layer and film layer wall, refracting layer
Upper surface depositional coating wall, film layer are the F-P optical filter membrane systems of high-index material/low-index material combination, height folding
It penetrates rate material and combines the half-band width that can reduce deep ultraviolet spike filter with low-index material, the number of plies of film layer is more, deep
The half-band width of ultraviolet spike filter is smaller, and optical property is lower；The material of filter layer wall and film layer wall includes
MgF2And SiO2；The material in reflecting layer includes Al (aluminium), HfO2(hafnium oxide), AlF3(aluminum trifluoride) and PbF2(lead fluoride)；
The material of refracting layer includes Al2O3(aluminium oxide).
The cooperation of refracting layer of the present invention and film layer wall makes the transmitance of film layer more than the transmission of filter layer
Rate, additionally it is possible to which the anti-reflection purpose for reaching deep ultraviolet spike filter reduces the reflected light at interface, improves the transmissivity of spectrum.
The film structure of deep ultraviolet spike filter of the present invention be basal layer/reflecting layer/wall/reflecting layer/
Wall/reflecting layer/wall/refracting layer/wall/.../refracting layer/wall/air.
The preparation process of deep ultraviolet spike filter of the present invention includes design membrane system formula, prepares basal layer, system
Standby filter layer prepares film layer and control thicknesses of layers totally five steps：
(1) membrane system formula is designed：According to the Refractive Index of Material of basal layer, filter layer, film layer and protective layer, delustring system
Number and setting bandwidth value technology requirement, design membrane system formula, using Essential Macleod (optical thin film analyze with
Design software) or TFCalc (thin film design software) carries out analog simulation to membrane system formula, optimization and physical thickness are worth change；
(2) basal layer is prepared：Basal layer is cut according to the size of setting；
(3) filter layer is prepared：1 layer of reflecting layer, then the upper surface in reflecting layer are deposited according in the upper surface of basal layer
The sequence of 1 multilayer filter interlayer interlayer is plated, 3 layers of reflecting layer are always co-deposited, plates 3 multilayer filter interlayer interlayers, completes filter layer
Making；
It is to prevent reflective layer to plate the effect of filter layer wall on the surface in reflecting layer；
(4) film layer is prepared：Choose refractive index it is lower be film layer wall, refractive index it is higher be refracting layer, according to
The upper surface of filter layer deposits 1 layer of refracting layer, then plates the sequence of 1 tunic interlayer interlayer in the upper surface of refracting layer, total coprecipitated
Product n-layer refracting layer, plates n-layer film layer wall, completes the making of film layer, plates 1 layer of protective layer on the surface of film layer, obtains deep ultraviolet
Spike filter；
(5) thicknesses of layers is controlled：Electron-beam vapor deposition method or ion sputtering process are used according to actual needs, are supervised using crystal
The mode of control controls the thickness of deep ultraviolet spike filter by controlling the growth time of film layer, and film layer wall is made to become
The anti-reflection film in reflecting layer, to improve the transmissivity of deep ultraviolet spike filter.
Deep ultraviolet spike filter prepared by the present invention, the thickness by increasing filter layer reduce deep ultraviolet narrow-band-filter
The half-band width of piece；The method packet of plating, filter layer wall and film layer wall and deposition of reflective layer and refracting layer
Include electron-beam vapor deposition method and magnetron sputtering method.
Deep ultraviolet spike filter prepared by the present invention, the Spectral Properties with peak value transmitance and wide long wave cut-off function degree
Property, particularly suitable for the occasion for requiring cut-off region wider；Select metal material anti-as the standard of F-P bandpass filter membrane systems
Plate is penetrated, visible and near-infrared spectrum is effectively inhibited, while ultraviolet transmission band can be cooperatively formed with film layer, is avoided
Conventional media coating ideal ultraviolet triangle passband effect in order to obtain, and it is superimposed standard reflecting plate, bring thicknesses of layers
The problem of thicker, preparation difficulty is larger, formation regional transmission spectral error.
Compared with prior art, the present invention being combined to metal-dielectric using the design concept of F-P bandpass filters saturating
It penetrates optical filter to be designed, selects tandem arrangement metal-dielectric optical filter to inhibit the bypass belt of long-wavelength region, using all dielectric optical filter
Bandwidth is reduced, in double half-wave F-P interference filters chip architectures (reflecting layer/wall/reflecting layer/wall/reflecting layer/interval
Layer) on the basis of tandem arrangement F-P optical filterings simple in structure are formed with the multi-layer film structure that high-index material/low-index material form
Piece realizes that the depth in specific deep ultraviolet band is ended, and by changing the shape of filter layer, can reduce depth in wave band
The half-band width of ultraviolet spike filter makes selected film layer be separated from membrane system, and the group of entire membrane system shares two and selectes
Effective interface indicate that, as long as considering to select the beam interference in film layer, the optical characteristics of multilayer film can acquire, and from
The middle method for obtaining design membrane system；Its filter sheet structure is simple, and production method is easy, and scientific in principle is reliable, ensure that visible light
Transmitance and depth cut-off, reduce the half-band width of deep ultraviolet spike filter.
Description of the drawings：
Fig. 1 is the agent structure principle schematic of the present invention.
Fig. 2 is the flow diagram of the preparation method of the present invention.
Fig. 3 is the transmitance and wavelength linear relation schematic diagram for the deep ultraviolet spike filter that the embodiment of the present invention 2 is related to.
Fig. 4 is the transmitance and wavelength linear relationship log forms for the deep ultraviolet spike filter that the embodiment of the present invention 2 is related to
Schematic diagram.
Fig. 5 is the specific embodiment schematic diagram for the deep ultraviolet narrow-band-filter piece preparation method that the embodiment of the present invention 2 is related to.
The electric vector direction symbol schematic diagram taken when the vertical incidence that Fig. 6 is related to by background of invention.
Fig. 7 is the monofilm equivalent interface schematic diagram that background of invention is related to.
Fig. 8 is the electric field schematic diagram for the monofilm that background of invention is related to.
Specific implementation mode：
The present invention is described further by way of example and in conjunction with the accompanying drawings.
Embodiment 1：
The agent structure for the deep ultraviolet spike filter that the present embodiment is related to includes basal layer 1, filter layer 2,3 and of film layer
Protective layer 4；The upper surface of basal layer 1 deposits the filter layer 2 that haves three layers, and the upper surface deposition of top layer's filter layer 2 has 13 tunics
Layer 3；Basal layer 1 is JGS1；The agent structure of filter layer 2 includes filter layer wall 10 and reflecting layer 20, reflecting layer 20
Upper surface deposition filter layer wall 10, filter layer wall 10 is SiO2, reflecting layer 20 is Al, and filter layer 2 is
Double half-wave F-P interference filter chip architectures (Al/SiO2/Al/SiO2/Al/SiO2), metal Al has larger in visible light wave range
Extinction coefficient and high reflection characteristic, Al and SiO2Combination can realize specific band depth cut-off and in deep ultraviolet band
High-transmission rate；The agent structure of film layer 3 includes filter layer wall 10 and refracting layer 30, the upper surface deposition of refracting layer 30
Filter layer wall 10, refracting layer 30 are Al2O3, film layer wall 40 is MgF2, MgF2Make in the extinction coefficient of ultraviolet band
MgF2Can be Al as the optical film materials of deep ultraviolet band, film layer 32O3/ MgF2The F-P optical filter membrane systems of combination,
Al2O3With MgF2Combination can reduce the half-band width of deep ultraviolet spike filter, protective layer 4 is SiO2。
The Al that the present embodiment is related to2O3Film and MgF2The reasonable cooperation of film makes the transmitance of film layer 3 be more than filter layer 2
Transmitance, additionally it is possible to which the anti-reflection purpose for reaching deep ultraviolet spike filter reduces the reflected light at interface, improves the transmission of spectrum
Rate.
The film structure for the deep ultraviolet spike filter that the present embodiment is related to is JGS1/Al/ SiO2/Al/SiO2/Al/
SiO2/Al2O3/MgF2/Al2O3/MgF2/Al2O3/MgF2/Al2O3/MgF2 /Al2O3/MgF2/Al2O3/MgF2/Al2O3/MgF2/
Al2O3/MgF2/Al2O3/MgF2/Al2O3/ MgF2/Al2O3/MgF2/Al2O3/MgF2/Al2O3/MgF2/SiO2。
Embodiment 2：
The preparation process for the deep ultraviolet spike filter that the present embodiment is related to includes design membrane system formula, prepare basal layer,
Filter layer is prepared, film layer is prepared and controls thicknesses of layers totally five steps：
(1) membrane system formula is designed：JGS1, Al, the SiO selected according to embodiment 12、 Al2O3And MgF2Refractive index, disappear
The technology of backscatter extinction logarithmic ratio and bandwidth less than 2nm requires to design membrane system formula：SiO2|HMH H2MH(MH)^2M(HM)^2H2MH
(MH) ^2 (NL) ^3 | JGS1, wherein L are Al, H Al2O3, M MgF2, N SiO2, using Essential Macleod (light
Learn film analysis and design software) or TFCalc (thin film design software) analog simulation, optimization and physics are carried out to membrane system formula
The change of thickness value；
(2) basal layer is prepared：JGS1 is cut into basal layer 1 according to the size of setting；
(3) filter layer is prepared：Choose SiO2For filter layer wall 10, Al is reflecting layer 20, according in basal layer
1 upper surface deposits 1 layer of Al film, then plates 1 layer of SiO in the upper surface of Al films2The sequence of film is always co-deposited 3 layers of Al films, plates 3 layers
SiO2Film completes the making of filter layer 2；
SiO is plated on the surface of Al films2The effect of film is to prevent Al films from aoxidizing；
(4) film layer is prepared：Choose the lower MgF of refractive index2For film layer wall 40, the higher Al of refractive index2O3For folding
Layer 30 is penetrated, 1 layer of Al is deposited according in the upper surface of filter layer 22O3Film, then in Al2O3Plate 1 layer of MgF in the upper surface of film2Film
Sequentially, 13 layers of Al are always co-deposited2O3Film plates 13 layers of MgF2Film completes the making of film layer 3, and 1 layer of protective layer 4 is plated in film layer 3,
Obtain deep ultraviolet spike filter；
(5) thicknesses of layers is controlled：Electron-beam vapor deposition method or ion sputtering process are used according to actual needs, are supervised using crystal
The mode of control controls the thickness of deep ultraviolet spike filter by controlling the growth time of film layer 2, makes MgF2Film becomes Al
The anti-reflection film of film, to improve the transmissivity of deep ultraviolet spike filter.
Al films in deep ultraviolet spike filter manufactured in the present embodiment have larger extinction coefficient in visible light wave range
And high reflection characteristic, it can realize the cut-off of the wavelength of 10-195nm, deep ultraviolet is reduced by increasing the thickness of filter layer 2
The half-band width of spike filter；Plate MgF2Film and depositing Al film and Al2O3The method of film includes electron-beam vapor deposition method and magnetic control
Sputtering method.
Claims (6)
1. a kind of deep ultraviolet spike filter, it is characterised in that agent structure includes basal layer, filter layer, film layer and protection
Layer；The surface of basal layer deposits the filter layer for the F-P cavity that haves three layers, and the surface deposition of top layer's filter layer has 2n-1 layers of pure Jie
Plate matcoveredn in the surface of the film layer of matter multi-cavity optical filter, film layer；The material of basal layer and protective layer includes MgF2, LiF, SiO2、
K9 glass and JGS1；The agent structure of filter layer includes filter layer wall and reflecting layer, the upper surface deposition in reflecting layer
Filter layer wall, filter layer are double half-wave F-P interference filter chip architectures；The agent structure of film layer includes refracting layer and film
Interlayer interlayer, the upper surface depositional coating wall of refracting layer, film layer are the F- of high-index material/low-index material combination
P optical filter membrane systems, high-index material combine the half-band width that can reduce deep ultraviolet spike filter, film with low-index material
The number of plies of layer is more, and the half-band width of deep ultraviolet spike filter is smaller, and optical property is lower；Between filter layer wall and film layer
The material of interlayer includes MgF2And SiO2；The material in reflecting layer includes Al, HfO2、AlF3And PbF2；The material of refracting layer includes
Al2O3。
2. deep ultraviolet spike filter according to claim 1, it is characterised in that the refracting layer and film layer wall
Cooperation makes the transmitance of film layer more than the transmitance of filter layer, additionally it is possible to reach the anti-reflection purpose of deep ultraviolet spike filter,
The reflected light for reducing interface, improves the transmissivity of spectrum.
3. deep ultraviolet spike filter according to claim 1, it is characterised in that film structure be basal layer/reflecting layer/
Wall/reflecting layer/wall/reflecting layer/wall/refracting layer/wall/.../refracting layer/wall/air.
4. deep ultraviolet spike filter according to claim 1, it is characterised in that preparation process include design membrane system formula,
Basal layer is prepared, filter layer is prepared, prepare film layer and controls thicknesses of layers totally five steps：
(1) membrane system formula is designed：According to the Refractive Index of Material of basal layer, filter layer, film layer and protective layer, extinction coefficient and
Setting bandwidth value technology requirement, design membrane system formula, using Essential Macleod or TFCalc to membrane system formula into
Row analog simulation, optimization and physical thickness are worth change；
(2) basal layer is prepared：Basal layer is cut according to the size of setting；
(3) filter layer is prepared：1 layer of reflecting layer is deposited according in the upper surface of basal layer, then 1 is plated in the upper surface in reflecting layer
The sequence of multilayer filter interlayer interlayer is always co-deposited 3 layers of reflecting layer, plates 3 multilayer filter interlayer interlayers, completes the system of filter layer
Make；
It is to prevent reflective layer to plate the effect of filter layer wall on the surface in reflecting layer；
(4) film layer is prepared：It is film layer wall that it is lower, which to choose refractive index, and higher refractive index is refracting layer, according to filtering
The upper surface of lamella deposits 1 layer of refracting layer, then plates the sequence of 1 tunic interlayer interlayer in the upper surface of refracting layer, is always co-deposited n-layer
Refracting layer plates n-layer film layer wall, completes the making of film layer, plates 1 layer of protective layer on the surface of film layer, obtains deep ultraviolet narrowband
Optical filter；
(5) thicknesses of layers is controlled：Electron-beam vapor deposition method or ion sputtering process are used according to actual needs, using crystal monitoring
Mode controls the thickness of deep ultraviolet spike filter by controlling the growth time of film layer, and film layer wall is made to become reflection
The anti-reflection film of layer, to improve the transmissivity of deep ultraviolet spike filter.
5. deep ultraviolet spike filter according to claim 1, it is characterised in that the deep ultraviolet spike filter of preparation is logical
Cross the half-band width for the thickness reduction deep ultraviolet spike filter for increasing filter layer；Plating, filter layer wall and film
Interlayer interlayer and the method for deposition of reflective layer and refracting layer include electron-beam vapor deposition method and magnetron sputtering method.
6. deep ultraviolet spike filter according to claim 1, it is characterised in that the deep ultraviolet spike filter of preparation has
The spectral characteristic for having peak value transmitance and wide long wave cut-off function degree, particularly suitable for the occasion for requiring cut-off region wider；Choosing
It uses metal material as the standard reflecting plate of F-P bandpass filter membrane systems, visible and near-infrared spectrum is effectively inhibited,
Ultraviolet transmission band can be cooperatively formed with film layer simultaneously, avoiding conventional media coating, ideal ultraviolet triangle is logical in order to obtain
Band effect, and it is superimposed standard reflecting plate, bring thicknesses of layers thicker, preparation difficulty is larger, forms regional transmission spectral error
Problem.
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| CN201810465400.8A CN108387961A (en) | 2018-05-16 | 2018-05-16 | A kind of deep ultraviolet spike filter |
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| CN108931832A (en) * | 2018-09-28 | 2018-12-04 | 杭州科汀光学技术有限公司 | Deep cut-off narrow band filter and optical instrument based on ultra-wide wavelength high reflection |
| CN110412674A (en) * | 2019-08-19 | 2019-11-05 | 苏州微纳激光光子技术有限公司 | A kind of full-time blind ultraviolet filter |
| CN111880255A (en) * | 2020-05-08 | 2020-11-03 | 浙江水晶光电科技股份有限公司 | Band-pass filter and preparation method thereof |
| CN112684532A (en) * | 2021-01-22 | 2021-04-20 | 宜兴市晶科光学仪器有限公司 | Method for preparing induced transmission filter by combining metal and medium |
| CN113050272A (en) * | 2021-03-03 | 2021-06-29 | 中国科学院上海光学精密机械研究所 | Deep ultraviolet filter and design method thereof |
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| CN117631114A (en) * | 2024-01-26 | 2024-03-01 | 衣金光学科技南通有限公司 | Method for manufacturing optical filter unit and optical filter unit |
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| CN111880255A (en) * | 2020-05-08 | 2020-11-03 | 浙江水晶光电科技股份有限公司 | Band-pass filter and preparation method thereof |
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| CN114706153A (en) * | 2022-02-18 | 2022-07-05 | 湖南麓星光电科技有限公司 | 10600nm wavelength ultra-narrow band filter and preparation method thereof |
| CN114706153B (en) * | 2022-02-18 | 2024-04-16 | 湖南麓星光电科技有限公司 | Ultra-narrow band filter with wavelength of 10600nm and preparation method thereof |
| CN114839708A (en) * | 2022-03-24 | 2022-08-02 | 中国计量大学 | Laser damage resistant blue light reflector and design method |
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