CN108680981B - Preparation method of deep ultraviolet narrow-band optical filter - Google Patents

Preparation method of deep ultraviolet narrow-band optical filter Download PDF

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CN108680981B
CN108680981B CN201810465405.0A CN201810465405A CN108680981B CN 108680981 B CN108680981 B CN 108680981B CN 201810465405 A CN201810465405 A CN 201810465405A CN 108680981 B CN108680981 B CN 108680981B
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吴锜
佟瑶
窦琳
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Dezhou Yaoding Photoelectric Technology Co ltd
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Abstract

The invention belongs to the technical field of thin film optics, and relates to a preparation method of a deep ultraviolet narrow-band filter, which comprises five steps of designing a film system formula, preparing a substrate layer, preparing a filter layer, preparing a film layer and controlling the thickness of the film layer, wherein a metal-medium combined transmission filter is designed by utilizing the design concept of an F-P band-pass filter, a metal-medium filter is selected to be connected in series to inhibit a bypass band of a long-wave area, a full-medium filter is adopted to reduce the bandwidth, the multi-layer film structure consisting of high refractive index materials/low refractive index materials is arranged in series on the basis of the structure of the double half-wave F-P interference filter to form the F-P filter with a simple structure, so that the depth cut-off in a specific deep ultraviolet band is realized, and the half-bandwidth of the deep ultraviolet narrow-band filter can be reduced by changing the shape of the filter layer; the filter has the advantages of simple structure, simple and convenient manufacturing method and scientific and reliable principle, ensures the transmittance and the depth cut-off of visible light, and reduces the half-bandwidth of the deep ultraviolet narrowband filter.

Description

Preparation method of deep ultraviolet narrow-band optical filter
The technical field is as follows:
the invention belongs to the technical field of thin film optics, and relates to a preparation method of a deep ultraviolet narrow-band filter.
Background art:
filters are optical devices used to select the desired wavelength band of radiation, and the common property of filters is that no filter is present to make the imaging of celestial objects brighter, since all filters absorb certain wavelengths, thereby making the object darker. The optical filter is made of plastic or glass sheets and special dyes, the red optical filter only allows red light to pass through, and so on, the transmissivity of the glass sheets is similar to that of air originally, all colored light can pass through, so the glass sheets are transparent, but after the dyes are dyed, the molecular structure changes, the refractive index also changes, and the passing of certain colored light changes, for example, a beam of white light passes through the blue optical filter, a beam of blue light is emitted, and the green light and the red light are few and are absorbed by the optical filter mostly. The filter is very effective and widely used in the photographic world, why is the main scene always prominent in some scenic paintings shot by photographers? The filter is used, for example, you want to shoot a yellow flower with a camera, the background is blue sky and green leaf, if the shooting is carried out normally, the theme of the yellow flower cannot be highlighted, because the image of the yellow flower is not highlighted enough, but if a yellow filter is arranged in front of the lens, a part of green light scattered by the green leaf and blue light scattered by the blue sky are blocked, and a large amount of yellow light scattered by the yellow flower passes through, so that the yellow flower is very obvious, and the theme of the yellow flower is highlighted. The optical filter products are mainly classified according to modes such as spectral bands, spectral characteristics, film layer materials, application characteristics and the like: the filter is divided into an ultraviolet filter, a visible filter and an infrared filter according to spectral bands; according to the spectral characteristics, the light is divided into a band-pass filter (the light in a selected waveband passes through and is cut off outside the passband, the optical indexes of the light are mainly central wavelength CWL and half bandwidth FWHM, and the light is divided into a narrow band and a wide band, such as a narrow band 808 filter NBF-808), a cut-off filter, a spectral filter, a neutral density filter and a reflective filter; the film layer materials are divided into a soft film filter and a hard film filter, wherein the hard film filter not only refers to the film hardness, but also refers to the laser damage threshold value, so that the film layer materials are widely applied to laser systems, and the facial soft film filter is mainly applied to biochemical analyzers.
The fundamental theory of optical thin films is derived based on electromagnetic field theory and maxwell's equations, and the optical characteristics of thin film systems are studied, and from a theoretical point of view, the propagation of planar electromagnetic waves through layered media is studied. Therefore, the most effective method for dealing with the thin film problem is to solve maxwell's equations, and obtain the wave equation of the electromagnetic wave through mathematical derivation by using maxwell's equations and three material equations as basic formulas, and for the uniform medium which is not conductive, the following is:
Figure BDA0001661928650000021
Figure BDA0001661928650000022
when the planar electromagnetic wave propagates with an angular frequency ω and a propagation distance along the direction vector k as the radius r, the solutions of equations (2-1) and (2-2) are:
Figure BDA0001661928650000023
Figure BDA0001661928650000024
the electric field E and the magnetic field H are perpendicular to each other, and each is perpendicular to the propagation direction K0 of the wave, conforming to the rule of right-handed rotation. Starting from the electromagnetic theory basic formula of Maxwell, the numerical relationship between H and E can be obtained by mathematical derivation from the formulas (1-1) and (1-3) as follows:
Figure BDA0001661928650000025
where Y is referred to as the optical admittance of the medium, meaning the ratio of the electric field strength to the magnetic field strength. Mu.s0In order to have a magnetic permeability,0is the dielectric constant. In the optical band, μrSufficiently close to 1.
In an incident medium, two waves travel from a positive direction and a negative direction. The components of the one and two media are symbolized as shown in fig. 6. From the integral form of maxwell's equations, it can be deduced that the tangential direction of light at the interface is continuous, and applying boundary conditions at the interface for a single layer film can be written:
Figure BDA0001661928650000026
Figure BDA0001661928650000031
by deriving the formula:
Figure BDA0001661928650000032
Figure BDA0001661928650000033
optically, the properties of a uniform dielectric film between two homogeneous media are of particular importance, we assume that all media are non-magnetic (μ)r1) to yield a monolayer film equivalent interface as shown in fig. 7, where
Figure BDA0001661928650000034
At interface 1, based on the boundary conditions:
Figure BDA0001661928650000035
Figure BDA0001661928650000036
the schematic diagram of the electric field of the monolayer film is shown in fig. 8, and can be represented by a matrix form:
Figure BDA0001661928650000037
wherein the phase thickness of the matrix is:
Figure BDA0001661928650000038
namely, it is
Figure BDA0001661928650000039
Therefore, it can be seen that:
Figure BDA00016619286500000310
Figure BDA00016619286500000311
using the boundary conditions for the interface 2, the following can be written:
Figure BDA00016619286500000312
Figure BDA00016619286500000313
Figure BDA0001661928650000041
written in matrix form:
Figure BDA0001661928650000042
meanwhile, the combination characteristic matrix of the substrate and the film is as follows:
Figure BDA0001661928650000043
Figure BDA0001661928650000044
according to the analysis and calculation of the single-layer film, the method can be popularized to the condition of the multilayer film, and the characteristic matrix of the multilayer film is as follows:
Figure BDA0001661928650000045
the phase thickness is as follows:
Figure BDA0001661928650000046
the calculation formula of the multilayer film is suitable for calculating all film layer characteristics.
The near-infrared narrowband filter for the somatosensory recognition system disclosed in the Chinese patent 201210548652.X comprises a substrate, and a main narrowband filter film system and a cut-off film system which are respectively positioned on two back surfaces of the substrate, wherein the main narrowband filter film system and the cut-off film system are respectively formed by alternately stacking a high-refractive-index film layer and a low-refractive-index film layer, the high-refractive-index film layer and the low-refractive-index film layer are formed by deposition through a vacuum coating method, and the central wavelength of a pass band of the main narrowband filter film system is consistent with the central wavelength of an infrared emission light source of the somatosensory recognition; the main film system of the narrow-band optical filter is a structure formed by overlapping a long-wave pass film stack and a short-wave pass film stack, the central wavelength of a pass band of the main film system of the narrow-band optical filter is 850nm, and the width of the pass band is 20 nm-50 nm; the cut-off film system is a long-wave pass film stack structure, the cut-off range of the cut-off film system is 400 nm-630 nm, and the pass-band range is 750 nm-1000 nm; the long-wave film passing stack is formed by overlapping a plurality of basic film stacks with the structure form of 0.5HL0.5H, the short-wave film passing stack is formed by overlapping a plurality of basic film stacks with the structure form of 0.5LH0.5L, wherein H represents a high-refractive-index film layer, and L represents a low-refractive-index film layer; the total film number of the narrow-band optical filter main film system is 40-55 layers, and the total film number of the cut-off film system is 30-45 layers; chinese patent 201610971376.6 discloses a short wave infrared narrow band filter, which comprises: substrate and front side film system A/(HL) ^ 4L (HL) ^ 8L (HL) ^ 41.64 H0.64L/S and back side film system A/(0.5HL0.5H) ^11 alpha (0.5HL0.5H) ^12 beta (0.5LH0.5L) ^7 gamma (0.5LH0.5L) ^10 omega (0.5LH0.5L) ^10/S formed on both side surfaces of the substrate, the symbol meaning in the film system: a is air, S is H-K9L glass substrate, H is high refractive index material titanium pentoxide, L is low refractive index material silicon dioxide, alpha, beta, gamma and omega respectively represent the multiple of the central wavelength and the central wavelength of each film system; the ultra-narrow band filter with the broadband cutoff disclosed in the chinese patent 201611007468.9 comprises a substrate, two surfaces of the substrate are respectively marked as an a surface and a B surface, the a surface and the B surface both have multilayer reflective films, the a surface has a broadband cutoff filtering thin film, and the film system structure is as follows: a substrate/α i (0.5HL0.5H) ^ a α i-1(0.5HL0.5H) ^ a.. α 1(0.5HL0.5H) ^ a β 1(0.5LH0.5L) ^ b β 2(0.5LH0.5L) ^ b.. β j (0.5LH0.5L) ^ b/air, where H is a high refractive index material, L is a low refractive index material, α i 0.8 α i-1.., α 2 α 1 0.8 α 1,. α 1 0.8, β 1 ═ 1.2, β 2 β 1.,. 1.2 β j 1 ^ 1.2 β j-1; selecting i and j values according to the cut-off bandwidth requirement, and selecting a and b values according to the cut-off degree requirement; the surface B is provided with an ultra-narrow band light filtering film, and the film system structure is as follows: substrate/L (HL) (LH) (HL) (LH) mLHL/air, and m and n values are selected according to the bandwidth and cut-off requirement of the ultra-narrow band filter film; the method for coating the narrow-band filter disclosed in the Chinese patent 201710421753.3 comprises the following steps: s1: plating a main film stack on the surface of one side of a blank glass substrate to enable the main film stack and the blank glass substrate to form an equivalent substrate, wherein the equivalent refractive index of the equivalent substrate at the central wavelength is equal to the refractive index of the blank glass substrate; s2: plating a first auxiliary film stack on one side surface of the equivalent substrate and plating a second auxiliary film stack on the other side surface of the equivalent substrate; chinese patent 201720097206.X discloses a quasi-rectangular narrow-band filter with high cut-off and low ripple, which comprises a substrate, and a main film system and a cut-off film system which are respectively arranged at two sides of the substrate, wherein the main film system and the cut-off film system are respectively composed of triple periodic films of Fabry-Perot filters with different equivalent refractive indexes, the main film system is preferably G [ (HL) ^ 4H 2L3H (LH) ^ 4L (HL) ^ 5H 2LH (LH) ^ 5L (HL) ^ 5H 2L3H (LH) ^ 5L (HL) ^ 4H 2L3H (LH) ^ 4L ]3A, wherein H and L respectively represent a high refractive index film and a low refractive index film with a quarter-wavelength film thickness, the high refractive index film is titanium oxide, niobium oxide or tantalum oxide, and the low refractive index film is silicon oxide; chinese patent 201611192856.9 discloses an ultra-narrow band filter for middle and high atmospheric day wind field observation, which comprises: the interference filter and the solid-state F-P etalon are placed in a combined mode; wherein, the interference filter is used for preliminarily inhibiting background light; the solid F-P etalon is used for controlling the bandwidth of the integral optical filter, the solid F-P etalon is composed of two parallel glass flat plates or quartz plates according to an interference principle, and interference fringes can be generated at an emergent end after incident light irradiates the etalon; the filters related to the above patents are all narrow-band filters, which mainly function to perform spectrum selection on light to allow the light with the unwanted wavelength to pass through, and cut off the light with the unwanted wavelength, and the narrow-band filters are very important optical components in photoelectric applications and laser technologies, and are required to have good optical and mechanical properties, such as good stability of central wavelength, high peak transmittance, high rejection ratio of cut-off, good uniformity and firmness of film layer, and the like; the deep ultraviolet filter can eliminate parasitic light in visible and ultraviolet regions, and has wide application in the fields of spectroscopy, laser, astronomical physics and the like; at present, no narrow-band filter applied to the deep ultraviolet band exists. Therefore, a preparation method of the deep ultraviolet narrowband optical filter is researched and designed to prepare the optical filter with narrow bandwidth and high transmittance, realize deep cut-off in a wide range, solve the problem of deep ultraviolet filtering, and have good social and economic values and wide application prospects.
The cut-off band of the all-dielectric band-pass filter is narrow but effective only in a limited area, and the high-reflection film of the all-dielectric narrow-band filter has a reflection bandwidth, so that bypass bands appear on both sides of the transmittance peak of the filter. In most applications, the bypass band must be suppressed: usually, the short wave bypass band is removed by only superposing a long wave pass absorption glass filter on the filter, the short wave pass absorption glass filter can effectively inhibit the long wave pass bypass band, but the short wave transmittance is too low, the peak transmittance of the whole film system is reduced, and the cut-off of the filter in the range of 200nm-250nm is very difficult because the short wave pass absorption glass filter does not exist in the spectral range. At present, two cut-off methods are researched, one is to add a metal-dielectric filter, the other is to connect a reflector in series with the filter to obtain cut-off, and the primary metal-dielectric Fabry-Perot type filter has the advantages that a long-wave side pass band is not generated, and the defects that the peak value transmissivity is very low, the half width is very large, and the cut-off degree and the pass band shape cannot be used are overcome.
The invention content is as follows:
the invention aims to overcome the defects in the prior art, and develops and designs a preparation method of a deep ultraviolet narrow-band filter, so that the filter which has narrow bandwidth and high transmittance, can realize deep cut-off in a wide range and solves the problem of deep ultraviolet filtering is prepared.
In order to achieve the purpose, the specific process of the preparation method of the deep ultraviolet narrowband optical filter comprises five steps of designing a film system formula, preparing a substrate layer, preparing an optical filter layer, preparing a film layer and controlling the thickness of the film layer:
(one) design film system formula: designing a film system formula according to the refractive indexes and extinction coefficients of the materials of the substrate layer, the optical filter layer, the film layer and the protective layer and the set bandwidth value technical requirements, and performing analog simulation, optimization and physical thickness value change on the film system formula by adopting Essential Macleod (optical film analysis and design software) or TFCalc (film design software);
(II) preparing a substrate layer: cutting the substrate layer according to the set size;
(III) preparing a filter layer: depositing 1 reflecting layer on the upper surface of the substrate layer, plating 1 interlayer of the optical filter layer on the upper surface of the reflecting layer, depositing 3 reflecting layers in total, and plating 3 interlayer of the optical filter layer to finish the manufacture of the optical filter layer;
the function of plating the filter layer spacing layer on the surface of the reflecting layer is to prevent the reflecting layer from being oxidized;
(IV) preparing a film layer: selecting a film interlayer with a lower refractive index and a refractive layer with a higher refractive index, depositing 1 refractive layer on the upper surface of the filter layer, then depositing n refractive layers on the upper surface of the refractive layer in the sequence of plating 1 film interlayer, plating n film interlayer interlayers to finish the manufacture of the film layer, and plating 1 protective layer on the surface of the film layer to obtain the deep ultraviolet narrow-band filter;
(V) controlling the thickness of the film layer: according to actual needs, an electron beam evaporation method or an ion sputtering method is adopted, the thickness of the deep ultraviolet narrowband filter is controlled by controlling the growth time of the film layer in a crystal monitoring mode, and the film layer spacing layer becomes an antireflection film of the reflecting layer, so that the transmissivity of the deep ultraviolet narrowband filter is improved.
The main structure of the deep ultraviolet narrow-band optical filter prepared by the invention comprises a substrate layer, an optical filter layer, a film layer and a protective layer; the surface of the substrate layer is deposited with 3 filter layers of F-P cavities, the surface of the uppermost filter layer is deposited with 2n-1(n is an integer larger than 1) layers of pure-medium multi-cavity filter layers, and the surface of each film layer is plated with a protective layer; the base layer and the protective layer are made of MgF2(magnesium fluoride), LiF (lithium fluoride), SiO2(quartz), K9 glass, and JGS1 (quartz glass sheet); the main structure of the filter layer comprises a filter layer spacing layer and a reflecting layer, wherein the filter layer spacing layer is deposited on the upper surface of the reflecting layer, and the filter layer is of a double-half-wave F-P interference filter structure (reflecting layer/filter layer spacing layer/reflecting layer/filter layer spacing layer); the main structure of the film layer comprises a refraction layer and a film layer spacing layer, the film layer spacing layer is deposited on the upper surface of the refraction layer, the film layer is an F-P optical filter film system formed by combining a high-refractive-index material and a low-refractive-index material, the half bandwidth of the deep ultraviolet narrow-band optical filter can be reduced by combining the high-refractive-index material and the low-refractive-index material, the more the number of the film layers is, the smaller the half bandwidth of the deep ultraviolet narrow-band optical filter is; the material of the filter layer spacing layer and the film layer spacing layer comprises MgF2And SiO2(ii) a The reflecting layer is made of Al (aluminum) or HfO2(hafnium oxide) AlF3 (Aluminum trifluoride) and PbF2(lead fluoride); the material of the refraction layer comprises Al2O3(alumina).
The refraction layer of the deep ultraviolet narrowband filter prepared by the invention is matched with the film layer spacing layer, so that the transmittance of the film layer is higher than that of the filter layer, the anti-reflection purpose of the deep ultraviolet narrowband filter can be achieved, the reflected light of an interface is reduced, and the transmittance of a spectrum is improved.
The film system structure of the deep ultraviolet narrowband filter prepared by the invention is a substrate layer/a reflecting layer/a spacing layer/a refracting layer/a spacing layer.
The half-bandwidth of the deep ultraviolet narrowband filter is reduced by increasing the thickness of the filter layer; the methods for plating the protective layer, the light filter interlayer and the film layer interlayer and depositing the reflecting layer and the refracting layer comprise an electron beam evaporation method and a magnetron sputtering method.
The deep ultraviolet narrow-band filter prepared by the invention has the spectral characteristics of high peak transmittance and wide and long wavelength cutoff, and is particularly suitable for being applied to occasions requiring a wider cutoff area; the metal material is selected as the standard reflecting plate of the F-P band-pass filtering film system to effectively inhibit visible and near-infrared spectrums, and meanwhile, the metal material can be matched with the film layer to form an ultraviolet transmission band, so that the problems that the thickness of the film layer is thick, the preparation difficulty is high and the spectrum error of a transmission region is formed due to the fact that the conventional medium film layer is overlapped to obtain an ideal ultraviolet triangular passband effect are solved.
Compared with the prior art, the invention designs the metal-medium combined transmission filter by utilizing the design concept of the F-P band-pass filter film, selects the series metal-medium filter to restrain the side band of a long wave area, adopts the all-medium filter to reduce the bandwidth, forms the F-P filter with simple structure by serially arranging a multi-layer film structure consisting of high refractive index materials/low refractive index materials on the basis of a double half-wave F-P interference filter structure (reflecting layer/spacing layer/reflecting layer/spacing layer), realizes the depth cut-off in a specific deep ultraviolet wave band at the wave band, can reduce the half bandwidth of the deep ultraviolet narrow band filter by changing the shape of the filter layer, separates the selected film layer from the film system, and the combination of the whole film system is represented by two selected effective interfaces, a method of obtaining a designed film system by obtaining optical characteristics of a multilayer film by considering interference of a plurality of light beams in a selected film; the filter has the advantages of simple structure, simple and convenient manufacturing method and scientific and reliable principle, ensures the transmittance and the deep cut-off of visible light, and reduces the half-bandwidth of the deep ultraviolet narrow-band filter.
Description of the drawings:
FIG. 1 is a block diagram of the process flow of the present invention.
Fig. 2 is a schematic diagram of a main structure principle of the deep ultraviolet narrowband optical filter prepared by the invention.
Fig. 3 is a schematic diagram illustrating a linear relationship between transmittance and wavelength of the deep ultraviolet narrowband filter according to the embodiment of the present invention.
Fig. 4 is a schematic diagram of a linear relationship log form of transmittance and wavelength of the deep ultraviolet narrowband filter according to an embodiment of the present invention.
Fig. 5 is a schematic view of a specific process of the method for manufacturing the deep ultraviolet narrowband filter according to the embodiment of the invention.
Fig. 6 is a schematic diagram of electric vector direction signs taken at normal incidence according to the background art of the present invention.
Fig. 7 is a schematic view of an equivalent interface of a single-layer film according to the background art of the present invention.
Fig. 8 is a schematic diagram of an electric field of a single-layer film according to the background art of the present invention.
The specific implementation mode is as follows:
the invention is further described by way of example with reference to the accompanying drawings.
Example 1:
the specific process of the method for preparing the deep ultraviolet narrowband filter of the deep ultraviolet narrowband filter comprises five steps of designing a film system formula, preparing a substrate layer, preparing a filter layer, preparing a film layer and controlling the thickness of the film layer:
(one) design film system formula: JGS1, Al, SiO selected according to example 12、 Al2O3And MgF2The refractive index, extinction coefficient and the bandwidth of the film are less than 2nm, and a film system formula is designed according to the technical requirements that: SiO 22I HMH H H2MH (MH) ^ 2M (HM) 2H 2MH (MH) ^2(NL) ^3| JGS1, wherein L is Al and H is Al2O3M is MgF2N is SiO2Adopting Essential Macleod (optical thin film analysis and design software) or TFCalc (thin film design software) to carry out simulation, optimization and physical thickness value change on a film system formula;
(II) preparing a substrate layer: cutting JGS1 into a substrate layer 1 according to a set size;
(III) preparing a filter layer: selecting SiO2An optical filter interlayer 10 and Al as a reflecting layer 20 are formed by depositing 1 layer of Al film on the upper surface of a substrate layer 1 and then plating 1 layer of SiO on the upper surface of the Al film2Film sequence, total 3 Al films deposited, 3 SiO layers plated2Film, finishing the manufacture of the optical filter layer 2;
plating SiO on the surface of Al film2The film functions to prevent oxidation of the Al film;
(IV) preparing a film layer: selecting MgF with lower refractive index2Is a film spacer layer 40 of Al having a high refractive index2O3For the refractive layer 30, 1 layer of Al is deposited on the upper surface of the filter layer 22O3Film on Al2O3The upper surface of the film was coated with 1 layer of MgF2Film sequence, total deposition of 13 layers of Al2O3Film, plating 13 layers of MgF2Film, finishing the manufacture of the film layer 3, and plating 1 protective layer 4 on the film layer 3 to obtain the deep ultraviolet narrow-band filter;
(V) controlling the thickness of the film layer: according to actual needs, an electron beam evaporation method or an ion sputtering method is adopted, and the thickness of the deep ultraviolet narrow-band filter is controlled by controlling the growth time of the film layer 2 in a crystal monitoring mode, so that MgF (magnesium fluoride) is enabled2The film becomes an antireflection film of the Al film to improve the transmissivity of the deep ultraviolet narrow-band filter.
The main structure of the deep ultraviolet narrowband optical filter prepared by the embodiment comprises a substrate layer 1, an optical filter layer 2, a film layer 3 and a protective layer 4; the upper surface of the substrate layer 1 is deposited with 3 filter layers 2, and the uppermost filter layer13 film layers 3 are deposited on the upper surface of the light sheet layer 2; base layer 1 is JGS 1; the main structure of the filter layer 2 comprises a filter interlayer 10 and a reflecting layer 20, the filter interlayer 10 is deposited on the upper surface of the reflecting layer 20, and the filter interlayer 10 is SiO2The reflecting layer 20 is Al, and the filter layer 2 is a double half-wave F-P interference filter structure (Al/SiO)2/Al/SiO2/Al/SiO2) Metal Al has larger extinction coefficient and high reflection characteristic in visible light wave band, and Al and SiO2The combination of (a) can realize a depth cut-off of a specific wavelength band and a high transmittance in a deep ultraviolet wavelength band; the main structure of the film layer 3 comprises a filter layer spacing layer 10 and a refraction layer 30, the filter layer spacing layer 10 is deposited on the upper surface of the refraction layer 30, and the refraction layer 30 is made of Al2O3The film layer spacing layer 40 is MgF2，MgF2Extinction coefficient in ultraviolet band makes MgF2Can be used as an optical thin film material in a deep ultraviolet band, and the film layer 3 is Al2O3/ MgF2Combined F-P filter film system, Al2O3With MgF2The combination of (1) can reduce the half-bandwidth of the deep ultraviolet narrow-band filter, and the protective layer 4 is SiO2。
Al of the deep ultraviolet narrowband filter prepared in the embodiment2O3Films and MgF2The reasonable matching of the films ensures that the transmittance of the film layer 3 is greater than that of the filter layer 2, and the anti-reflection purpose of the deep ultraviolet narrow-band filter can be achieved, so that the reflected light of the interface is reduced, and the transmittance of the spectrum is improved.
The film system structure of the deep ultraviolet narrow-band filter prepared by the embodiment is JGS 1/Al/SiO2/Al/SiO2/Al/SiO2/Al2O3/MgF2/Al2O3/MgF2/Al2O3/MgF2/Al2O3/MgF2 /Al2O3/MgF2/Al2O3/MgF2/Al2O3/MgF2/Al2O3/MgF2/Al2O3/MgF2/Al2O3/ MgF2/Al2O3/MgF2/Al2O3/MgF2/Al2O3/MgF2/SiO2。
The Al film in the deep ultraviolet narrow-band filter prepared by the embodiment has a larger extinction coefficient and high reflection characteristic in a visible light waveband, can realize the cut-off of the wavelength of 10-195nm, and reduces the half-bandwidth of the deep ultraviolet narrow-band filter by increasing the thickness of the filter layer 2; plating MgF2Film and deposition of Al film and Al2O3Methods of the film include electron beam evaporation and magnetron sputtering.

Claims (4)

1. A preparation method of a deep ultraviolet narrowband optical filter is characterized in that the specific process comprises five steps of designing a film system formula, preparing a substrate layer, preparing an optical filter layer, preparing a film layer and controlling the thickness of the film layer:
(one) design film system formula: designing a film system formula according to the refractive indexes and extinction coefficients of the materials of the substrate layer, the optical filter layer, the film layer and the protective layer and the set bandwidth value technical requirements, and performing simulation, optimization and physical thickness value change on the film system formula by adopting an essential Macleod or TFCalc;
(II) preparing a substrate layer: cutting the substrate layer according to the set size;
(III) preparing a filter layer: depositing 1 reflecting layer on the upper surface of the substrate layer, plating 1 interlayer of the optical filter layer on the upper surface of the reflecting layer, depositing 3 reflecting layers in total, and plating 3 interlayer of the optical filter layer to finish the manufacture of the optical filter layer;
the function of plating the filter layer spacing layer on the surface of the reflecting layer is to prevent the reflecting layer from being oxidized;
(IV) preparing a film layer: selecting a film interlayer with a lower refractive index and a refractive layer with a higher refractive index, depositing 1 refractive layer on the upper surface of the filter layer, then depositing n refractive layers on the upper surface of the refractive layer in the sequence of plating 1 film interlayer, plating n film interlayer interlayers to finish the manufacture of the film layer, and plating 1 protective layer on the surface of the film layer to obtain the deep ultraviolet narrow-band filter;
(V) control film layerThickness: according to actual needs, an electron beam evaporation method or an ion sputtering method is adopted, the thickness of the deep ultraviolet narrowband filter is controlled by controlling the growth time of the film layer in a crystal monitoring mode, and the film layer spacing layer becomes an antireflection film of the reflecting layer, so that the transmissivity of the deep ultraviolet narrowband filter is improved; the main structure of the deep ultraviolet narrow-band optical filter comprises a substrate layer, an optical filter layer, a film layer and a protective layer; the surface of the substrate layer is deposited with 3 filter layers of F-P cavities, the surface of the uppermost filter layer is deposited with 2n-1 film layers of pure-medium multi-cavity filters, and the surface of each film layer is plated with a protective layer; the base layer and the protective layer are made of MgF2、LiF，SiO2K9 glass and JGS 1; the main structure of the filter layer comprises a filter layer spacing layer and a reflecting layer, wherein the filter layer spacing layer is deposited on the upper surface of the reflecting layer, and the filter layer is of a double-half-wave F-P interference filter structure; the main structure of the film layer comprises a refraction layer and a film layer spacing layer, the film layer spacing layer is deposited on the upper surface of the refraction layer, the film layer is an F-P optical filter film system formed by combining a high-refractive-index material and a low-refractive-index material, the half bandwidth of the deep ultraviolet narrow-band optical filter can be reduced by combining the high-refractive-index material and the low-refractive-index material, the more the number of the film layers is, the smaller the half bandwidth of the deep ultraviolet narrow-band optical filter is; the material of the filter layer spacing layer and the film layer spacing layer comprises MgF2And SiO2(ii) a The material of the reflecting layer comprises PbF2(ii) a The material of the refraction layer comprises Al2O3(ii) a The cooperation of the refraction layer and the film layer spacing layer enables the transmittance of the film layer to be larger than that of the filter layer, and the anti-reflection purpose of the deep ultraviolet narrow-band filter can be achieved, so that the reflected light of the interface is reduced, and the transmittance of the spectrum is improved.
2. The method according to claim 1, wherein the film structure is substrate layer/reflective layer/spacer layer/reflective layer/spacer layer/refractive layer/spacer layer/… …/refractive layer/spacer layer/air.
3. The method for preparing the DUV narrowband filter according to claim 1, wherein the prepared DUV narrowband filter reduces the half-bandwidth of the DUV narrowband filter by increasing the thickness of the filter layer; the methods for plating the protective layer, the light filter interlayer and the film layer interlayer and depositing the reflecting layer and the refracting layer comprise an electron beam evaporation method and a magnetron sputtering method.
4. The method for preparing the deep ultraviolet narrowband filter according to claim 1, characterized in that the prepared deep ultraviolet narrowband filter has spectral characteristics of high peak transmittance and wide wavelength cutoff, and is applied to occasions requiring a wider cutoff region; the metal material is selected as the standard reflecting plate of the F-P band-pass filtering film system to effectively inhibit visible and near-infrared spectrums, and meanwhile, the metal material can be matched with the film layer to form an ultraviolet transmission band, so that the problems that the thickness of the film layer is thick, the preparation difficulty is high and the spectrum error of a transmission region is formed due to the fact that the conventional medium film layer is overlapped to obtain an ideal ultraviolet triangular passband effect are solved.
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