CN110983253B - Preparation method of high-performance narrow-band light filtering film - Google Patents

Preparation method of high-performance narrow-band light filtering film Download PDF

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CN110983253B
CN110983253B CN201911146648.9A CN201911146648A CN110983253B CN 110983253 B CN110983253 B CN 110983253B CN 201911146648 A CN201911146648 A CN 201911146648A CN 110983253 B CN110983253 B CN 110983253B
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filtering film
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band light
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CN110983253A (en
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姜玉刚
刘华松
陈丹
王利栓
何家欢
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Tianjin Jinhang Institute of Technical Physics
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films

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Abstract

The invention relates to a preparation method of a high-performance narrow-band light filtering film, and belongs to the technical field. The invention provides a preparation method of a high-performance narrow-band filtering film, which is characterized in that a transmittance curve of the prepared filtering film is compared with a similar theoretical curve for analysis, and the preparation of the high-performance narrow-band filtering film is realized by correcting the deposition time of a spacing layer of the filtering film. The invention has universality for the preparation of narrow-band filtering films with different working wavelengths and different bandwidths.

Description

Preparation method of high-performance narrow-band light filtering film
Technical Field
The invention belongs to the technical field of optical films, and particularly relates to a preparation method of a high-performance narrow-band light filtering film.
Background
With the rapid development of optical systems, narrow-band filters have become an important research content in the field of optical thin films at present. The narrow-band filter is used as a device for filtering and selecting spectral lines, has wide application in laser technology, optical communication technology, high-resolution imaging, laser radar, satellite remote sensing detection and the like, and is especially important in a high-resolution imaging system. The research on narrow-band filters at home and abroad is highly focused, and the efforts of expanding cut-off wavelength, narrowing line width, reducing non-uniformity, improving peak transmittance and reliability are continuously carried out, and become one of the most active subjects in the field of optical thin films.
In high-precision optical element applications, the methods currently used for depositing optical films can be broadly divided into: physical vapor deposition and chemical vapor deposition. The mainstream film forming method is still physical vapor deposition, which is to prepare a film layer by a physical method, wherein the physical vapor deposition method mainly comprises electron beam evaporation, ion beam sputtering, ion beam assisted deposition, magnetron sputtering and the like. The narrow-band filter has small bandwidth and small central wavelength tolerance, so the requirement on the control precision of the film thickness is extremely high, and the ultra-narrow-band filter is basically prepared by adopting an ion beam sputtering deposition technical method. When the substrate rotation mode of the commonly used dual-ion beam sputtering film plating machine adopts a planetary rotation working mode at present, the film thickness monitoring mainly takes deposition time as a control parameter, so that the spectral characteristics of the prepared narrow-band filtering film deviate from the designed spectral characteristics, but the research of a narrow-band filtering film correction method is not yet found, and therefore the research of the narrow-band filtering film preparation technology needs to be developed.
In summary, no report is found on the current method for preparing the high-performance narrow-band filter film based on the spacer layer optical thickness correction.
Disclosure of Invention
Technical problem to be solved
The technical problem to be solved by the invention is as follows: how to design a preparation method of a high-performance light filtering film and realize the preparation of the high-performance narrow-band light filtering film.
(II) technical scheme
In order to solve the technical problem, the invention provides a preparation method of a high-performance narrow-band light filtering film, which comprises the following steps:
1) firstly, designing a double-cavity narrow-band light filtering film;
2) preparing narrow-band light filtering film by vacuum coating method, wherein the deposition time of two spacing layers is t1And t2And testing the transmittance curve;
3) analyzing the wavelength and the transmittance of the double peaks from the tested transmittance curve;
4) obtaining the optical thicknesses of the two narrow-band filtering film spacing layers based on the test curve;
5) correcting the spacer layer film deposition time based on the optical thicknesses of the two narrow-band light filtering film spacer layers;
6) and finally, preparing the narrow-band light filtering film by adopting a vacuum coating method, and testing the spectrum.
Preferably, the double-cavity narrow-band filtering film designed in the step 1 has a center wavelength of λiThe film system structure is as follows: sub | L (HL) m ^ m nH (LH) m L (HL) m ^ m nH (LH) m L H | Air or Sub | L H (LH) m nL (HL) m H L H (LH) m nL (HL) m H L | Air, wherein λiThe range is 200nm-5000nm, the range of m is 3-20, the range of n is 2-16, n is an even number, H is a high-refractive-index thin film material, and L is a low-refractive-index thin film material.
Preferably, the narrow-band filtering film prepared in step 2 has deposition time t for two spacing layers1And t2And testing the transmittance curve.
Preferably, in the step 4, a film design software is adopted, a theoretical curve is simulated based on a test curve, and the optical thicknesses of the two narrow-band light filtering film spacing layers are respectively n + k and n-k, wherein the range of k is-n.
Preferably, in step 5, the deposition time of the first spacer layer film after the correction is t1X n/(n + k), the deposition time of the second spacer layer film after correction is t2×n/(n-k)。
Preferably, the high refractive index thin film material is Ta2O5The film material with low refractive index is SiO2A film material.
Preferably, in step 2, the narrow-band filtering film is prepared by ion beam sputtering deposition technology.
Preferably, in step 6, the narrow-band filtering film is prepared by ion beam sputtering deposition technology.
Preferably, a narrow-band filter film is designed on a K9 or quartz substrate.
Preferably, the narrow band filtering film is prepared on a K9 or quartz substrate.
(III) advantageous effects
The invention provides a preparation method of a high-performance narrow-band filtering film, which is characterized in that a transmittance curve of the prepared filtering film is compared with a similar theoretical curve for analysis, and the preparation of the high-performance narrow-band filtering film is realized by correcting the deposition time of a spacing layer of the filtering film. The result shows that the method can modify the deposition time of the light filtering film spacing layer, prepare the high-transmittance narrow-band light filtering film and has an important effect on the preparation of the high-performance narrow-band light filter. The invention has universality for the preparation of narrow-band filtering films with different working wavelengths and different bandwidths.
Drawings
FIG. 1 is a schematic diagram of a 532nm narrow band filter structure;
FIG. 2 is a theoretical design curve of a 532nm narrow-band filtering film;
FIG. 3 is a graph of a 532nm narrow band filter film peak separation test;
FIG. 4 is a graph of the peak separation theory of a 532nm narrow-band filter film;
FIG. 5 is a modified 532nm narrow band filter film test graph.
Detailed Description
In order to make the objects, contents, and advantages of the present invention clearer, the following detailed description of the embodiments of the present invention will be made in conjunction with the accompanying drawings and examples.
The preparation method of the high-performance light filtering film provided by the invention comprises the following steps:
1) firstly, a double-cavity narrow-band light filtering film is designed, and the central wavelength is lambdaiUnit is nm, and the structure of the film system is as follows: sub | L (HL) m ^ m nH (LH) m L (HL) m ^ m nH (LH) m L H | Air or Sub | L H (LH) m nL (HL) m H L H (LH) m nL (HL) m H L | Air, wherein λiThe range is 200nm-5000nm, the range of m is 3-20, the range of n is 2-16 (even number), H is a high-refractive-index thin film material, L is a low-refractive-index thin film material, Sub is a substrate, and Air is Air;
2) preparing narrow-band light filtering film by vacuum coating method, wherein the deposition time of two spacing layers is t1And t2And testing the transmittance curve;
3) analyzing parameters such as the wavelength and the transmittance of the double peaks from the tested transmittance curve;
4) simulating a theoretical curve similar to the test curve by adopting film design software to obtain two narrow-band light filtering film spacing layers with optical thicknesses of n + k and n-k respectively, wherein the range of k is-n;
5) correcting the deposition time of the spacer layer film, wherein the deposition time of the first spacer layer film after correction is t1X n/(n + k), the deposition time of the second spacer layer film after correction is t2×n/(n-k)。
6) And finally, preparing the narrow-band light filtering film by adopting a vacuum coating method, and testing the spectrum.
The following example experiments were performed with 532nm narrow band filter films, and the experimental procedure was as follows:
1) firstly, a double-cavity narrow-band filtering film is designed on fused quartz, the structural schematic diagram of the filter is shown in figure 1, the central wavelength is 532nm, and the structure of the film system is as follows: sub | L H (LH) 46L (HL) 4H L H (LH) 46L (HL) 4H L | Air, H is high refractive index Ta2O5Film material, L is low refractive index SiO2A film material. The theoretical transmittance curve of the designed 532nm narrow-band filter film is shown in FIG. 2.
2) The 532nm narrow-band filter film is prepared by adopting an ion beam sputtering deposition technology, wherein the deposition time of two spacing layers is 1570.0s and 1570.0s respectively, and the transmittance curve is tested, and the test result is shown in figure 3.
3) From the transmittance curve tested, a double peak appears, with the relatively shorter peak on the left having a center wavelength of 530.6nm and the relatively taller peak on the right having a center wavelength of 533.6 nm.
4) Simulating a theoretical curve similar to the test curve by adopting thin film design software, and obtaining two spacing layers with optical thicknesses of 5.97L and 6.03L respectively as shown in FIG. 4;
5) the deposition time of the spacer layer films is corrected, wherein the deposition time of the first spacer layer film after correction is 1570.0 × 6/5.97 ═ 1577.9s, and the deposition time of the second spacer layer film after correction is 1570 × 6/6.03 ═ 1562.2 s.
6) Finally, a 532nm narrow-band filtering film is prepared by adopting an ion beam sputtering deposition technology, the spectrum of the prepared 532nm narrow-band filtering film is tested, the test result is shown in figure 5, the transmittance at the 532nm wavelength is 90.5%, and the bandwidth is about 2.1 nm.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.

Claims (6)

1. A preparation method of a high-performance narrow-band light filtering film is characterized by comprising the following steps:
1) firstly, designing a double-cavity narrow-band light filtering film;
2) preparing narrow-band light-filtering film by vacuum coating method, wherein the deposition time of two spacing layers is t1And t2And testing the transmittance curve;
3) analyzing the wavelength and the transmittance of the double peaks from the tested transmittance curve;
4) obtaining the optical thicknesses of the two narrow-band filtering film spacing layers based on the test curve;
5) correcting the spacer layer film deposition time based on the optical thicknesses of the two narrow-band filtering film spacer layers;
6) finally, preparing a narrow-band light filtering film by adopting a vacuum coating method, and testing the spectrum;
the double-cavity narrow-band light filtering film designed in the step 1 has the central wavelength of lambdaiThe film system structure is as follows: sub | L (HL) m H (LH) ml (HL) m H (LH) m LHL | Air or Sub | LH (LH) m nL (HL) m HLH (LH) m nL (HL) m HLHL | Air, whereiniThe range is 200nm-5000nm, the range of m is 3-20, the range of n is 2-16, n is an even number, H is a high-refractive-index thin film material, and L is a low-refractive-index thin film material;
the narrow-band light filtering film prepared in the step 2 has the deposition time t of two spacing layers1And t2And testing the transmittance curve;
in the step 4, film design software is adopted, a theoretical curve is simulated based on a test curve, and the optical thicknesses of the two narrow-band light filtering film spacing layers are respectively n + k and n-k, wherein the range of k is-n;
in step 5, the deposition time of the first spacing layer film after correction is t1X n/(n + k), the deposition time of the second spacer layer film after correction is t2×n/(n-k)。
2. The method of claim 1, wherein the high index thin film material is Ta2O5The film material with low refractive index is SiO2A film material.
3. The method of claim 2, wherein in step 2, the narrow-band filtering film is prepared by ion beam sputtering deposition.
4. The method of claim 3, wherein the narrow-band filtering film is prepared in step 6 by ion beam sputtering deposition.
5. The method of claim 3, wherein the narrow-band filter film is designed on a K9 or quartz substrate.
6. The method of claim 3, wherein the narrow band filtering film is prepared on a K9 or quartz substrate.
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CN112068234A (en) * 2020-09-10 2020-12-11 天津津航技术物理研究所 Intelligent protection narrowband optical filter
CN113881926B (en) * 2021-09-24 2022-06-28 中国科学院上海光学精密机械研究所 Method for improving deposition precision of optical thin film

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