CN111999789A - Ultraviolet communication film - Google Patents
Ultraviolet communication film Download PDFInfo
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- CN111999789A CN111999789A CN202010841674.XA CN202010841674A CN111999789A CN 111999789 A CN111999789 A CN 111999789A CN 202010841674 A CN202010841674 A CN 202010841674A CN 111999789 A CN111999789 A CN 111999789A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/283—Interference filters designed for the ultraviolet
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Abstract
The invention relates to an ultraviolet communication film, which is designed by metal Al and MgF based on JGS1 MLMLML Air film layer structure based on interference principle aiming at double requirements of ultraviolet communication on ultraviolet passing and other wave band inhibition2A multilayer film system is formed. Optical performances of different structures in the ultraviolet communication film are simulated by adopting TFCalc calculation, and the influence rule and mechanism of parameters such as film thickness, period and the like on the spectral characteristics of the film are disclosed. On the basis, the ultraviolet communication film with the bandwidth of 21 nm and the average transmittance of 212 nm-233 nm of the wave band of higher than 60%, the cutoff degree for visible light of 2.8 OD and the transmittance of higher than 72% at the incident angle of 0-10 DEG within the wavelength of 221 nm is obtained by continuously optimizing the structure of the ultraviolet communication film. The film has the dual properties of visible high cut-off of the metal film and ultraviolet high transmission of the dielectric film, and the technical problem of ultraviolet communication selective transmission is well solved.
Description
Technical Field
The invention relates to the technical field of thin film manufacturing, in particular to an ultraviolet communication film.
Background
Informatization is continuously popularized in the current society, plays an important role in the life of people, an optical communication technology plays an important role in the informatization process, a communication film is still an important component of scientific research, and an ultraviolet technology is mainly applied to national defense, industrial production, astronomy research, environmental protection test and the like, such as an ultraviolet alarm technology, imaging technology ultraviolet curing, an ultraviolet astronomy technology, ultraviolet communication, distance measurement, fingerprint detection and the like. Ultraviolet communication is a new communication system, which works in a solar blind area (200 nm-280 nm) and can realize non-direct-view (NLOS) communication based on the extremely strong scattering property of medium ultraviolet radiation. Ultraviolet communication has the advantages of high data transmission confidentiality, strong system anti-interference capability, low position detection rate, omnidirectionality, terrain adaptability and the like, and is more and more widely applied.
At present, in order to reduce the reflection loss of the surface of the optical element, plating an appropriate antireflection film on the surface of the optical element is one of the key technologies of an optical system, but at present, no single material can have optical properties of high ultraviolet transmittance and high visible cutoff, the ultraviolet filter film is roughly divided into a multi-layer dielectric filter film and a metal dielectric filter film, but the cutoff band of the metal film is wider than that of the multi-layer dielectric film, and the metal film can deeply cut off visible light and infrared light, has a cutoff degree higher than that of the multi-layer dielectric film, and has the characteristics of less pollution to the environment and less damage to the environment. The transmittance of the metal dielectric film to short ultraviolet is not high at about 60%, so that an ultraviolet communication film is urgently needed to meet the requirement of communication selective transmission and solve the problems of low transmission of the metal film and low cut-off degree of the dielectric film.
Disclosure of Invention
Aiming at the defects of the prior art, an ultraviolet communication film is provided.
The technical scheme adopted by the invention for solving the technical problems is as follows: constructing an ultraviolet communication film, which comprises a base material, and a dielectric film material and a metal film material which are sequentially and alternately laminated on one side surface of the base material; the dielectric film material is a dielectric film with low refractive index, and the metal film material is a metal film with high refractive index.
Wherein, the metal film material is selected from metal aluminum, and the dielectric film material is selected from magnesium fluoride.
The number of the alternately laminated layers of the high-refractive-index profile materials is 6, wherein 3 layers of the high-refractive-index profile materials are magnesium fluoride materials, and a layer of metal aluminum is arranged between every two layers of the magnesium fluoride materials.
Wherein, the thickness of the metal aluminum film is set to be 10 nm, and the thickness of the magnesium fluoride material film is set to be 60 nm.
Wherein the base material is a fused silica substrate JGS 1.
The ultraviolet communication film comprises a base material, and a medium film material and a metal film material which are sequentially and alternately laminated on the surface of one side of the base material; the dielectric film material is a dielectric film with low refractive index, and the metal film material is a metal film with high refractive index. The invention can meet the requirement of the ultraviolet detector on signal screening, shorten the precious time required by communication, improve the transmissivity of the wave band of 200 nm-280 nm and reduce the reflectivity so as to meet the communication requirement.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
fig. 1 is a schematic structural diagram of an ultraviolet communication film provided by the present invention.
Detailed Description
For a more clear understanding of the technical features, objects and effects of the present invention, embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
Referring to fig. 1, the present invention provides an ultraviolet communication film, which includes a substrate, and a dielectric thin film material and a metal thin film material alternately laminated in sequence on one side surface of the substrate; the dielectric film material is a dielectric film with low refractive index, and the metal film material is a metal film with high refractive index.
Wherein, the metal film material is selected from metal aluminum, and the dielectric film material is selected from magnesium fluoride.
The number of the alternately laminated layers of the high-refractive-index profile materials is 6, wherein 3 layers of the high-refractive-index profile materials are magnesium fluoride materials, and a layer of metal aluminum is arranged between every two layers of the magnesium fluoride materials.
Wherein, the thickness of the metal aluminum film is set to be 10 nm, and the thickness of the magnesium fluoride material film is set to be 60 nm.
Wherein the base material is a fused silica substrate JGS 1.
The invention screens the ultraviolet communication film substrate material and the medium material from the transmission factor of 200 nm-280 nm.
The types of thin film materials discovered and invented currently are hundreds, and suitable ultraviolet region materials can be selected by taking reference to the aspects of refractive index, transparent region, density, melting point, thermal stability and the like of the materials. The ultraviolet materials obtained by screening are few, and lithium fluoride (LiF) and calcium fluoride single crystals (CaF) are available2) Magnesium fluoride (MgF)2) Ultraviolet fused silica (JGS 1), four substrate materials are available for solar blind ultraviolet.
The magnesium fluoride has a thermal expansion coefficient of 9 x 10 < -6 > m/K, high Moh hardness of 5.0-6.0, good heat resistance and impact resistance, is commonly used as an optical prism and a lens, but has high processing cost and difficulty and is easy to absorb moisture.
The Mohs hardness of the calcium fluoride is 4.0, the thermal conductivity is 9.71 m.K, the thermal expansion coefficient is 18.87-20.16 m/K, the anti-striking capability is weak and fragile, and the optical treatment processing is difficult.
The Mohs hardness of the lithium fluoride is 3.0, the hardness is lower, the thermal conductivity is 11.3 m.K, the lithium fluoride is higher and unstable when heated, and the production and processing conditions are severe.
JGS1 is an artificial quartz glass, has high transmittance (up to 90%) to ultraviolet band in solar blind area, has high Mohs hardness of 5.5-6.5, very low thermal conductivity (1.4 m.K), stable physical and chemical properties, is very suitable for complex environment faced by field training, and is easy to process and one of the reasons for selecting the crystal as a substrate.
In conclusion, JGS1 is selected as a substrate material, the transmittance of the substrate to 100 nm-1000 nm is as high as 96.35%, and the substrate has stable transmittance to visible light and invisible light.
The film material needs to select a metal filmThe material and the dielectric film material, the material with transmissivity in ultraviolet band mainly comprises fluoride and oxide, and the high-refraction material comprises: lead fluoride (PbF)2) Antimony trioxide (Sb)2O3) Aluminum oxide (Al)2O3) Lanthanum fluoride (LaF)3) Hafnium oxide (HfO)2) The low refractive index material has: magnesium fluoride (MgF)2) Aluminum fluoride (AlF)3) Silicon dioxide (SiO)2) Cryolite (Na)3AlF6) Conical ice crystals (5 NaF)3AlF3) Common metal thin film materials include aluminum (Al), silver (Ag), copper (Cu), gold (Au), and the like.
The choice of the coating material is also very important, and two suitable materials need to be selected according to the refractive index, extinction coefficient, transparent region and physical and chemical stability of the material. By contrast, the dielectric film is selected to be low refractive index material magnesium fluoride (MgF)2) The magnesium fluoride has good ultraviolet and visible light transmittance at 100-1000 nm, and the lowest transmittance reaches 96%.
By comparing the transmittance of the metal aluminum, copper, silver, gold having a physical thickness of 10 nm to the wavelength of 100 nm to 1000 nm, it can be seen that:
the Al metal has the best transmission performance in a wave band of 200 nm-280 nm, the highest transmission rate can reach 49%, Ag has higher transmission rate in a wave band of 400 nm-700 nm, the average transmission rate of visible light is more than 50%, but the average transmission rate in an ultraviolet region is less than 10%. Au and Cu are inferior to Al in ultraviolet transmission performance and visible cut-off performance, the transmissivity of only Al in the four metals is sharply reduced after the Al enters a visible light wave band, and the transmissivity of three metals of Cu, Au and Ag is sharply increased at a wave band of 400 nm-1000 nm, so that the three metals do not meet the design requirements. Based on comprehensive consideration of ultraviolet transmittance and visible cut-off, Al is most suitable as a metal dielectric film material. The Al has wide application in ultraviolet band, Mohs hardness of 2.75, excellent physical stability and mechanical strength, strong adhesion on a substrate and excellent matching property with a dielectric film material. Finally, Al is selected as the metal film material of the ultraviolet communication film.
When the thickness of the metal film is selected, the metal aluminum below 10 nm is too thin to be continuously formed, so that the light transmittance of the aluminum film on the JGS1 substrate is studied at intervals of 2 nm with 10 nm as the lowest physical thickness when designing the metal dielectric film, and the aluminum films with the thicknesses of 10 nm, 12 nm, 14 nm, 16 nm, 18 nm, 20 nm and 22 nm are respectively arranged on the JGS1 substrate, and the light transmittance of the aluminum films to 100 nm-1000 nm is studied. Through experiments, the maximum transmittance of the Al films with the thicknesses of 10 nm, 12 nm, 14 nm, 16 nm, 18 nm and 20 nm is respectively 49%, 39%, 31%, 24%, 18% and 15%, so that when the designed Al film is thicker, the transmittance of light is lower, ultraviolet light cannot transmit because the thickness of the Al film is too large and exceeds the ultraviolet skin depth, and therefore, the designed thickness of the Al film is required to be 10 nm to obtain relatively high ultraviolet transmittance and visible light and infrared light cut-off rates.
When the thickness of the dielectric film is selected, the research waveband is 200 nm-280 nm, so the thickness of the magnesium fluoride film is designed to be 60 nm by taking the central wavelength of 240 nm as an example.
The basic structure of the film design is JGS1| (ML)sL Air, wherein JGS1 is a fused silica substrate, M is an Al metal dielectric layer, and L is MgF2And the low-refractive-index medium layer is provided with a coating period s and a light beam incident medium Air, wherein the thickness of the M layer is 10 nm, and the thickness of the L layer is 60 nm.
It was found through experiments that structures other than the structure of s =1 have a good cut-off function for visible light, and it can be seen that the transmittance peak shifts to a short wavelength direction with an increase in the number of cycles to appear a blue shift phenomenon and the transmittance peak decreases somewhat, because the transmittance to light decreases with an increase in the number of cycles as the Al film becomes thicker in total thickness, the results showed that the effects are similar to those of the structure of s =2 JGS1| MLML | Air and the structure of s =3 JGS1| MLML | Air.
Optimized comparative analysis is carried out on the film thickness of the structure JGS1| MLML | Air of S =2 and the structure JGS1| MLML | Air of S =3 by using TFCalc software and the principle of light interference, and the unoptimized sample S of S =2 in the table 1 is obtained respectively1And sample S has been optimized2S =3 unoptimized sample S3And optimized sample S4。
| Sample (I) | Period of time | Film layer structure | Thickness per layer/nm |
| S1 | 2 | Al/MgF2/Al/MgF2 | 10/60/10/60 |
| S2 | 2 | Al/MgF2/Al/MgF2 | 10/60/10/43 |
| S3 | 3 | Al/MgF2/Al/MgF2/Al/MgF2 | 10/60/10/60/10/60 |
| S4 | 3 | Al/MgF2/Al/MgF2/Al/MgF2 | 10/60/10/60/10/43 |
| S5 | 3 | Al/MgF2/Al/MgF2/Al/MgF2 | 10/60/10/60/10/37 |
Table 1 physical thickness data
Respectively aligning lambda/4 thickness optical film sample S by optical interference principle1And S3Carrying out optimization design S1Optimized to obtain S2The transmission peak value and the narrow band width with the transmission rate of more than 60 percent are respectively improved by 4.21 percent and 12 nm, S3Optimized to obtain S4The transmission peak value and the narrow band width with the transmission rate of more than 60 percent are respectively improved by 4.08 percent and 6 nm, and then the optimized sample S2And S4The comparison shows S2Has a peak value higher than S4Sample S2The highest transmission value 72.87% is at 241 nm, while sample S4The highest transmission value of 72.09% is at 221 nm, but for sample S4The cut-off rate in UVB, UVA and visible light wave band is higher than S2And the cut-off depth for visible light approaches infinity to 0, the film system structure finally determined by the present subject is a 6-layer film structure of JGS1| mlmlmlml | Air.
Meanwhile, the film sensitivity of the 6-layer film structure shown in the table 1 is tested through software, the 4 th layer and the 5 th layer are most sensitive when the physical thickness changes, the thickness of the 5 th layer Al film is changed, the transmissivity peak value is reduced, the transmission peak value is not shown at 240 nm but is wholly shifted leftwards, and when 221 nm is used as the central wavelength, the thickness is selected to be d3The transmittance was slightly improved by 38 nm, and S in Table 15Transmission peak ratio S4The narrow band width increased by 0.7 percent and the transmissivity of more than 60 percent is increased by 2 nm, and the finally determined film system structure and film layer thickness are taken as a sample S5。
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (5)
1. An ultraviolet communication film is characterized by comprising a base material, and a dielectric film material and a metal film material are sequentially and alternately laminated on one side surface of the base material; the dielectric film material is a dielectric film with low refractive index, and the metal film material is a metal film with high refractive index.
2. The uv communication film of claim 1, wherein the metal film material is aluminum metal and the dielectric film material is magnesium fluoride.
3. The uv communication film according to claim 2, wherein the number of layers of the profile materials with high and low refractive indexes alternately stacked is 6, 3 of the layers are magnesium fluoride materials, and a layer of aluminum metal is arranged between each two layers of magnesium fluoride materials.
4. The uv communication film according to claim 2, wherein the thickness of the metallic aluminum thin film is set to 10 nm, and the thickness of the magnesium fluoride material thin film is set to 60 nm.
5. The uv communication film according to claim 1, wherein the substrate is a fused silica based JGS 1.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010841674.XA CN111999789A (en) | 2020-08-20 | 2020-08-20 | Ultraviolet communication film |
| AU2021100259A AU2021100259A4 (en) | 2020-08-20 | 2021-01-15 | An ULTRAVIOLET COMMUNICATION FILM |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010841674.XA CN111999789A (en) | 2020-08-20 | 2020-08-20 | Ultraviolet communication film |
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| Publication Number | Publication Date |
|---|---|
| CN111999789A true CN111999789A (en) | 2020-11-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010841674.XA Pending CN111999789A (en) | 2020-08-20 | 2020-08-20 | Ultraviolet communication film |
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|---|---|
| CN (1) | CN111999789A (en) |
| AU (1) | AU2021100259A4 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108680981A (en) * | 2018-05-16 | 2018-10-19 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet narrow-band-filter piece preparation method |
| CN208207265U (en) * | 2018-05-16 | 2018-12-07 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet narrow band filter |
-
2020
- 2020-08-20 CN CN202010841674.XA patent/CN111999789A/en active Pending
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2021
- 2021-01-15 AU AU2021100259A patent/AU2021100259A4/en not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108680981A (en) * | 2018-05-16 | 2018-10-19 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet narrow-band-filter piece preparation method |
| CN208207265U (en) * | 2018-05-16 | 2018-12-07 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet narrow band filter |
Non-Patent Citations (1)
| Title |
|---|
| 寇洋等: "光学告警系统中紫外信号采集滤光膜的研制", 《光学学报》 * |
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| AU2021100259A4 (en) | 2021-04-15 |
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