CN115508921A - Visible light compatible near-infrared laser stealth antireflection film - Google Patents
Visible light compatible near-infrared laser stealth antireflection film Download PDFInfo
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- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
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Abstract
The invention belongs to the technical field of stealth materials, and particularly relates to a visible light compatible near-infrared laser stealth antireflection film which comprises a plurality of horizontally extending periodic structures, wherein each periodic structure comprises a base layer and a metal convex layer arranged on the base layer, the base layer comprises a substrate, a first dielectric layer, a metal thin film layer and a second dielectric layer which are sequentially connected in a laminated manner, and the area of the metal convex layer is smaller than that of the base layer.
Description
Technical Field
The invention belongs to the technical field of stealth materials, and particularly relates to a visible light compatible near-infrared laser stealth antireflection film.
Background
With the improvement of the precision, range and power of the sniper rifle, a sniper with fine equipment and training has stronger and stronger aggressivity, and can bring great psychological panic to the enemy.
The anti-sniper sound detection system is used for determining the position of a sniper through receiving and measuring a muzzle shockwave of a sniper rifle and a shockwave generated by the flying of a shot. The anti-sniping infrared detection system is used for accurately determining the position of a sniper through detecting the flash at the muzzle during firing and the infrared signals generated during the flight of the shot. The laser detection system is based on the cat eye effect, and utilizes the characteristic that the reflecting capacity of the sighting telescope of the sniper is stronger than that of the surrounding background, when the sighting telescope is irradiated by invisible light waves, laser reflected light which is not easy to be perceived by the sniper and can be received by the detection system can be generated, and therefore the sniper can be located.
In order to improve the concealment and the defense of own sniper on a battlefield, the research on the stealth technology of the sniper becomes a research hotspot in the military field of the present generation.
The Chinese patent application No. 201910478388.9 discloses a stealth film and a preparation method thereof, which sequentially comprises a base material, an inner dielectric layer, a reflecting layer and an outer dielectric layer from inside to outside, wherein the outer dielectric layer is an oxide with high refractive index, and the refractive index is 2.0-3.0; the inner dielectric layer is oxide with low refractive index, and the refractive index is 1.0-1.8.
Disclosure of Invention
The invention aims to solve the technical problem of providing a visible light compatible near-infrared laser invisible antireflection film, which has high transmissivity in a visible light band and good absorptivity and narrow absorption bandwidth in a near-infrared band.
One embodiment of the invention provides a visible light compatible near-infrared laser stealth antireflection film which comprises a plurality of horizontally extending periodic structures, wherein each periodic structure comprises a base layer and a metal convex layer arranged on the base layer, the base layer comprises a substrate, a first dielectric layer, a metal thin film layer and a second dielectric layer which are sequentially connected in a stacked mode, and the area of the metal convex layer is smaller than that of the base layer.
The base layer is provided with the metal convex layer, the absorption rate of the film in a near infrared band is effectively improved through the metal convex layer, and the effect of narrow-band absorption is generated.
Preferably, the shape of the metal bump layer is rectangular or cross-shaped, and is more preferably rectangular.
The shape of the base layer is rectangular, and is preferably square.
Preferably, in one periodic structure, the centers of the base layer and the metal bump layer are located on the same vertical line.
Optionally, the first dielectric layer and the second dielectric layer are made of ZnS and Si, respectively 3 N 4 Or SiO 2 Preferably ZnS; the metal thin film layer and the metal protruding layer are made of Ag, au or Mo respectively, and preferably made of Ag.
Optionally, the thicknesses of the first dielectric layer and the second dielectric layer are respectively 30-60 nm; the thickness of the metal film layer is 12-20 nm.
Optionally, when the metal bump layer is rectangular, the length of the metal bump layer is 80 to 200nm, and the width of the metal bump layer is 60 to 130nm. The thickness of the metal bump layer may be 10 to 15nm (preferably 10 nm); more preferably, the length of the metal bump layer is 100 to 130nm, and the width is 80 to 100nm; more preferably, the metal bump layer has a length of 120nm and a width of 90nm.
Optionally, the substrate is a visible light-transmitting material, which is generally classified into two major categories, glass and high polymer. The high polymer is a conventional high polymer light-transmitting material known to those skilled in the art, such as polymethyl methacrylate, polystyrene, polycarbonate, etc. can be used in the technical solution of the present invention. Preferably, the substrate is made of K9 glass (K9 optical glass) and directly contacts with a physical plane, and the K9 glass has the characteristics of high transmission and low absorption in the wavelength range of 350 nm-2500 nm, so that the K9 glass has good transmission performance in a visible light wave band.
Optionally, in a periodic structure, the area of the metal bump layer (5) is 5% -60% of the area of the base layer, preferably 5-30%, and more preferably 8-10%.
The layers of the invention can be obtained by depositing in sequence by adopting conventional coating methods such as magnetron sputtering vacuum coating and the like, and the invention is not elaborated in detail for the prior art.
The medium/metal/medium multilayer film has the characteristics of high visible light transmission and high infrared band reflection, because the metal film has high reflectivity in the infrared band, but when the thickness of the metal film is in the nanometer level, the metal film has a certain transmission effect in the visible light band. Although visible light can transmit through an ultra-thin metal thin film, the transmittance is not high.
The inventor finds that when a beam of light is incident on the film, reflected light is generated on both the upper surface and the lower surface of the film, and if the difference between the optical paths of the two reflected light beams is exactly equal to half a wavelength, the two beams of light cancel each other due to interference, the reflection of the light is eliminated, and from another perspective, the transmittance of the film is increased. In the dielectric/metal/dielectric multilayer film, light is reflected at interfaces, and the thickness and the refractive index of the dielectric are adjusted to ensure that the reflected light generated by each interface can be mutually counteracted as much as possible so as to improve the transmission performance of the multilayer film.
The anti-reflection film with the visible light compatible near-infrared laser stealth function has the beneficial effects that the anti-reflection film with the visible light compatible near-infrared laser stealth function has the stealth performance of a near-infrared wave band and has good transmission performance in a visible light region. The first dielectric layer, the metal thin film layer and the second dielectric layer form a dielectric/metal/dielectric sandwich periodic structure multilayer film system, so that the antireflection effect is provided, and the light transmittance of the thin film is improved. The metal/medium/metal Fabry-Perot cavity formed by the metal convex layer, the second medium layer and the metal thin film layer provides the effect of spectrum selective absorption. The anti-cat eye detection system is simple in structure, extremely thin in thickness and tunable in near-infrared laser wavelength, has important application prospect in the aspect of anti-cat eye detection systems, greatly reduces the possibility that a sniper is actively detected, and is beneficial to reducing the risk coefficient of the sniper.
Drawings
FIG. 1 is a schematic structural diagram of one embodiment of the present invention;
FIG. 2 is a top view of a structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a periodic structure of one embodiment of the present invention;
FIG. 4 is a top view of a periodic structure according to one embodiment of the present invention;
FIG. 5 is a top view of a periodic structure of an embodiment of the present invention (embodiment 5);
FIG. 6 is a graph showing a transmission spectrum in example 1 of the present invention;
FIG. 7 is an absorption spectrum of example 1 of the present invention;
FIG. 8 is a graph showing a transmission spectrum in example 2 of the present invention;
FIG. 9 is an absorption spectrum chart of example 2 of the present invention.
In the figure, 1 a substrate, 2 a first dielectric layer, 3 a metal thin film layer, 4 a second dielectric layer, 5 a metal bump layer.
Detailed Description
Example 1
As shown in fig. 1 and 2, a visible light compatible near-infrared band stealth antireflection film is a periodic structure, and includes a plurality of horizontally extending periodic structures, a single periodic structure is as shown in fig. 3-4, each periodic structure includes a base layer and a metal protrusion layer 5 disposed on the base layer, the base layer includes a substrate 1, a first dielectric layer 2, a metal thin film layer 3 and a second dielectric layer 4, which are sequentially stacked and connected, and the area of the metal protrusion layer 5 is smaller than that of the base layer.
As shown in fig. 1-2, the anti-reflection film comprises a substrate 1, a first dielectric layer 2, a metal thin film layer 3, a second dielectric layer 4 and n metal protruding layers 5.
As shown in fig. 3-4, a period P is 350nm, in one period, the substrate 1 is made of K9 glass, and the thickness H1=50nm of the substrate 1 is selected; the first dielectric layer 2 and the second dielectric layer 4 are made of ZnS materials, and the thicknesses of the first dielectric layer 2 and the second dielectric layer 4 are selected to be H2= H4=35nm; the metal film layer 3 is made of Ag material and has the thickness of H3=15nm. The metal bump layer 5 is made of Ag material, the length l is 120nm, the width w is 90nm, and the thickness h is 10nm.
The length and the width of the substrate 1, the first dielectric layer 2, the metal thin film layer 3 and the second dielectric layer 4 which are sequentially connected in a stacked manner are P, namely 350nm.
As shown in fig. 3, the centers of the substrate 1, the first dielectric layer 2, the metal thin film layer 3, the second dielectric layer 4 and the metal bump layer 5 in one period are located on the same vertical line.
Fig. 6 and 7 are the spectra under the irradiation of the normal incidence light in the above embodiment of the present invention. As can be seen from the transmission spectrum of fig. 6, the transmittance in the visible light range of 400nm to 800nm was higher than 70%, the average transmittance was 86%, and the maximum transmission peak of 93% was obtained at a wavelength of 460 nm.
As can be seen from the absorption spectrum of FIG. 7, an absorption peak of 92.2% was observed at a wavelength of 1550nm, and the absorption bandwidth was only 160nm.
Examples 2 to 5
Parameters of the substrate 1, the first dielectric layer 2, the metal thin film layer 3, the second dielectric layer 4 and the metal bump layer 5 are adjusted, and the rest is the same as that of the embodiment 1.
In example 5, the center of the metal bump layer 5 was shifted from the center of the base layer by P/4 in the vertical and horizontal directions, as shown in fig. 5, and at this time, the absorption peak at a wavelength of 1600nm was only 0.3.
Indexes such as transmittance and absorption peak were measured to obtain a measurement index table of each example shown in table 1.
Comparative example 1
In contrast to example 3, comparative example 1, in which the convex metal layer was not provided, had an absorption peak of 0.1 at a wavelength of 1000nm and an absorption of only 0.06 at a wavelength of 1600nm, as in example 3.
Comparative example 2
Comparative example 2, which is the same as example 3 except that the circular convex metal layer having a radius of 60nm and a thickness of 10nm was not provided, was compared to example 3, and had an absorption peak of 0.66 at a wavelength of 1000nm and an absorption of only 0.2 at a wavelength of 1600 nm.
Indexes such as transmittance and absorption peak of comparative examples 1-2 were measured to obtain a measurement index table of each example shown in table 1.
TABLE 1 table of examination indexes of the examples
The metal convex layer is added on the base layer, so that the near infrared absorption is higher and the bandwidth is narrower compared with a film without the metal convex layer.
The utility model provides a metal protruding layer is the cross, and for it is circular, the effect will be obviously better, and the transmissivity of visible light wave band is higher, and near-infrared absorbs more.
In a periodic structure, the centers of the base layer and the metal bump layer are located on the same vertical line, and the near infrared absorption is higher than that if the centers of the base layer and the metal bump layer are not located on the same line.
Those of ordinary skill in the art will understand that: the discussion of any embodiment above is meant to be exemplary only, and is not intended to imply that the scope of the application is limited to these examples; within the context of the present application, features from the above embodiments or from different embodiments may also be combined, steps may be implemented in any order, and there are many other variations of different aspects of one or more embodiments in the present application as described above, which are not provided in detail for the sake of brevity.
The one or more embodiments of the present application are intended to embrace all such alternatives, modifications and variances that fall within the broad scope of the present application. Therefore, any omissions, modifications, substitutions, improvements, and the like that may be made without departing from the spirit or scope of one or more embodiments of the present application are intended to be included within the scope of the present application.
Claims (10)
1. The visible light compatible near-infrared laser stealth antireflection film is characterized by comprising a plurality of horizontally extending periodic structures, wherein each periodic structure comprises a base layer and a metal protruding layer (5) arranged on the base layer, the base layer comprises a substrate (1), a first dielectric layer (2), a metal thin film layer (3) and a second dielectric layer (4) which are sequentially connected in a stacked mode, and the area of the metal protruding layer (5) is smaller than that of the base layer.
2. An antireflection film according to claim 1, wherein the shape of the metal bump layer (5) is rectangular or cross-shaped.
3. An antireflection film as claimed in claim 2, wherein said metal bump layer (5) has a rectangular shape.
4. The antireflection film as claimed in claim 1, wherein the centers of the base layer and the metal bump layer (5) are located on the same vertical line in a periodic structure.
5. The antireflection film according to claim 1, wherein the materials of the first dielectric layer (2) and the second dielectric layer (4) are ZnS and Si, respectively 3 N 4 Or SiO 2 (ii) a The metal thin film layer (3) and the metal protruding layer (5) are made of Ag, au or Mo respectively.
6. An antireflection film according to any one of claims 1 to 5, wherein the thicknesses of the first dielectric layer (2) and the second dielectric layer (4) are 30 to 60nm, respectively; the thickness of the metal film layer (3) is 12-20 nm.
7. The antireflection film according to claim 3, wherein the metal bump layer (5) has a length of 80 to 200nm and a width of 60 to 130nm.
8. The antireflection film according to claim 7, wherein the metal bump layer (5) has a length of 120nm and a width of 90nm.
9. The antireflection film according to any of claims 1 to 5, wherein the material of the substrate (1) is K9 glass.
10. The antireflection film according to any of claims 1 to 5, wherein the area of the metal bump layer (5) in one periodic structure is 5 to 60% of the area of the base layer.
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| CN202211267369.XA CN115508921A (en) | 2022-10-17 | 2022-10-17 | Visible light compatible near-infrared laser stealth antireflection film |
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| CN202211267369.XA CN115508921A (en) | 2022-10-17 | 2022-10-17 | Visible light compatible near-infrared laser stealth antireflection film |
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| CN115674845A (en) * | 2023-01-05 | 2023-02-03 | 中国人民解放军火箭军工程大学 | Visible light radar infrared multiband compatible intelligent stealth material |
| CN115921254A (en) * | 2023-01-06 | 2023-04-07 | 中国航空制造技术研究院 | Laser broadband stealth structure of aircraft surface radar, preparation method and application |
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