CN115061229B - Laser and middle-far infrared compatible stealth membrane system structure - Google Patents
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Abstract
The invention discloses a laser and mid-far infrared compatible stealth membrane system structure, and belongs to the technical field of multiband compatible stealth materials. Is formed by inserting a metal reflecting film layer M (1) and a metal reflecting film layer M (2) into a doped photonic crystal film system structure A/B/T/A/B, and the basic structure is one of the following 4 types: (1) A/B/T/A/M (1)/B/M (2); (2) A/B/T/M (1)/A/B/M (2); (3) A/B/M (1)/T/A/B/M (2); (4) A/M (1)/B/T/A/B/M (2); wherein the materials of the dielectric layer A, the dielectric layer B and the dielectric layer T are independently selected from ZnS, znO, znSe, al 2 O 3 、SiO 2 、TiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The materials of the metal reflecting film layer M (1) and the metal reflecting film layer M (2) are independently selected from Ag, au and Al. The laser and middle-far infrared compatible stealth membrane system structure has a 10.6 mu m laser and middle-far infrared compatible stealth effect, and is beneficial to improving stealth camouflage and outburst prevention capability of battlefield equipment.
Description
Technical Field
The invention relates to a 10.6 mu m laser and mid-far infrared compatible stealth film system structure utilizing F-P interference and photon local synergistic effect, belonging to the technical field of multiband compatible stealth materials.
Background
The detection and guidance technology on modern battlefield is increasingly diversified, radar, laser, infrared and visible light and other multiband advanced military reconnaissance equipment are jointly applied, and especially optical reconnaissance, infrared passive detection and laser active detection form a multimode composite guidance mode, and the multi-mode composite guidance technology is widely applied to asymmetrical deadly striking weapons with accurate guidance such as missiles, wherein the application of a 10.6 mu m carbon dioxide laser, a 3-5 mu m infrared window detector, an 8-14 mu m infrared window detector and the like is quite common.
The traditional stealth technology has the limitation of single function, can only better avoid a single detection mode, has no capability for a multi-mode combined detection means, and has serious crisis hidden danger facing the survivability in future informatization war. Therefore, the development of a multi-spectrum stealth technology compatible with laser and infrared has become an important subject to avoid the high-precision locking and defeating attack of multi-source detection and improve the battlefield viability and burst prevention capability of military equipment.
Conventional laser stealth approaches typically employ coating of strongly absorbing materials such as rare earth, semiconductor, plasma, conductive polymers, etc. to minimize reflectivity in the laser band. The traditional infrared stealth means mainly relies on low-emissivity coating technologies such as metal fillers, semiconductor fillers, dielectric/metal multilayer composite films, diamond-like carbon films and the like, so that high reflectivity is expected to be achieved for thermal infrared light waves, infrared heat absorption is reduced, and infrared low-emissivity effects are achieved. However, the laser frequency domain of 10.6 mu m is in the far infrared window band interval of 8-14 mu m, and if compatible stealth of both passive infrared detection and active laser detection is to be realized, the infrared reflectivity of the material must be improved and the reflectivity at the laser wavelength is reduced at the same time, and the two stealth principles are contradictory in a certain sense, so that the two stealth principles are difficult to realize by the traditional stealth material. With the increasingly important key roles played in laser and infrared detection and guidance, the realization of a compatible stealth material technology of a 10.6 mu m laser frequency domain and middle far infrared is an urgent matter.
With the gradual discovery of microstructures such as photonic crystals, super-structured wave absorbers, F-P interference cavities, D-M-D (medium-metal-medium) structures and the like, the micro-structures have better electromagnetic wave selective control characteristics, have been paid attention to the field of solving the selective control of infrared radiation, and have better breakthrough development in the field of multi-spectrum compatible stealth.
Disclosure of Invention
Aiming at the prior art, the invention provides a stealth film system structure compatible with laser and middle-far infrared. The invention designs a novel multilayer structure film material with specific configuration by utilizing the combination of F-P cavity interference (Fabry-Perot ) and doped photonic crystals, and cooperatively exerts the comprehensive effects of F-P cavity destructive interference, photon forbidden band and photon local area, thereby realizing the multiband stealth function of 10.6 mu m laser and far infrared compatibility in 3-5 mu m and 8-14 mu m, being beneficial to improving stealth camouflage and outburst prevention capability of battlefield equipment and being a 'doubling device' for battle force generation.
The invention is realized by the following technical scheme:
a laser and far infrared compatible stealth film system structure is formed by inserting a metal reflecting film layer M (1) and a metal reflecting film layer M (2) into a doped photon crystal film system structure A/B/T/A/B, wherein the basic structure is one of the following 4 types:
①A/B/T/A/M(1)/B/M(2)；②A/B/T/M(1)/A/B/M(2)；③A/B/M(1)/T/A/B/M(2)；④A/M(1)/B/T/A/B/M(2)；
wherein the materials of the dielectric layer A, the dielectric layer B and the dielectric layer T are independently selected from ZnS, znO, znSe, al 2 O 3 、SiO 2 、TiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The materials of the metal reflecting film layer M (1) and the metal reflecting film layer M (2) are independently selected from Ag, au and Al, and play a role of a strong double-sided reflector of the F-P cavity;
the refractive indexes of the medium layer A, the medium layer B and the medium layer T at the position of 10.6 mu m are respectively n A 、n B 、n T The thickness of the dielectric layer A, the dielectric layer B and the dielectric layer T are respectively d A 、d B 、d T Has the following advantages ofThe following relationship: n is n A× d A ≈n B× d B ≈n T× d T Approximately equal to (2650+/-delta) nm, delta is error correction compensation quantity, and delta is 75-300, and for structures (1) and (3), the "-" is taken, and for structures (2) and (4), the "+"; the thicknesses of the metal reflective film layer M (1) and the metal reflective film layer M (2) are 5-25 nm.
The laser and middle-far infrared compatible stealth membrane system structure is applied to being used as or preparing infrared and laser compatible stealth materials. In specific application, the medium layers and the metal reflecting film layers can be coated layer by layer on the surface of the substrate by adopting advanced micro-nano manufacturing technologies such as atomic layer deposition, magnetron sputtering, evaporation plating and the like, so that the film system structure is prepared with high precision. The substrate is selected from Indium Tin Oxide (ITO), tin antimony oxide (ATO), quartz, PET, and the like.
The laser and mid-far infrared compatible stealth film system structure utilizes F-P interference and photon local synergistic effect, and forms 4 film system structure patterns by inserting two metal reflection film layers M (1) and M (2) in a doped photon crystal film system structure A/B/T/A/B, thereby obtaining the following beneficial effects: 1. forming high reflection characteristics of far infrared window wave bands in the range of 3-5 mu m and 8-14 mu m by utilizing the photon forbidden band effect of the photonic crystal and the strong reflection effect of the metal film; 2. by utilizing the synergistic effect of the photon local effect and the asymmetric F-P interference effect of the doped photonic crystal, the spectral hole digging is realized at the laser frequency domain of 10.6 mu m, and the phenomenon of low reflection light trapping is formed, so that the compatible stealth effect of the laser of 10.6 mu m and the middle and far infrared is realized.
According to the laser and mid-far infrared compatible stealth film system structure, the metal reflection film is inserted into the basic structure of the doped photonic crystal, so that the synergistic and comprehensive effects of the asymmetric F-P interference effect and the photonic local effect are ingeniously utilized, compared with the pure F-P cavity interference and the photonic crystal defect state, the film system structure has the advantages that the reflectivity is lower and the spectral hole digging gap width is narrower at the laser frequency domain of 10.6 mu m, the perfect combination of the laser and infrared compatible stealth can be achieved, and meanwhile, the film system structure with simple arrangement has good manufacturing and processing characteristics.
The various terms and phrases used herein have the ordinary meaning known to those skilled in the art.
Drawings
Fig. 1: the basic structure (1) is schematically shown.
Fig. 2: the basic structure (2) is schematically shown.
Fig. 3: the basic structure (3) is schematically shown.
Fig. 4: the basic structure (4) is schematically shown.
Fig. 5: reflection spectrum characteristics schematic (before correction).
Fig. 6: schematic diagram of far infrared band reflection spectrum characteristics (before correction).
Fig. 7: reflection spectrum characteristics (after correction).
Fig. 8: schematic diagram of far infrared band reflection spectrum characteristics (after correction).
Detailed Description
The invention is further illustrated below with reference to examples. However, the scope of the present invention is not limited to the following examples. Those skilled in the art will appreciate that various changes and modifications can be made to the invention without departing from the spirit and scope thereof.
The instruments, reagents, materials, etc. used in the examples described below are conventional instruments, reagents, materials, etc. known in the art, and are commercially available. The experimental methods, detection methods, and the like in the examples described below are conventional experimental methods, detection methods, and the like that are known in the prior art unless otherwise specified.
Example 1 laser and mid-far infrared compatible stealth film System Structure
Is formed by inserting a metal reflecting film layer M (1) and a metal reflecting film layer M (2) into a doped photonic crystal film system structure A/B/T/A/B, and the basic structure is one of the following 4 types:
(1) A/B/T/A/M (1)/B/M (2), as shown in FIG. 1;
(2) A/B/T/M (1)/A/B/M (2), as shown in FIG. 2;
(3) A/B/M (1)/T/A/B/M (2), as shown in FIG. 3;
(4) A/M (1)/B/T/A/B/M (2), as shown in FIG. 4;
the materials of the medium layer A and the medium layer T are zinc selenide (ZnSe), and the refractive index at the position of 10.6 mu m is 2.4; the material of the dielectric layer B is titanium dioxide (TiO 2 ) The refractive index at 10.6 μm is 1.18. The thickness of the dielectric layer A, the dielectric layer B, the dielectric layer T and the dielectric layer T are respectively d A 、d B 、d T According to the design criteria of one quarter of the wavelength of light, the following relationship is provided: n is n A× d A ≈n B× d B ≈n T× d T Approximately 2650 and nm, wherein the thicknesses of the dielectric layer A and the dielectric layer T are 1104 nm and the thickness of the dielectric layer B is 2246 nm. The metal reflecting film layer M (1) and the metal reflecting film layer M (2) are Ag films, and the thicknesses of the Ag films are respectively 10nm and 20nm.
The reflection spectrum characteristics of the four film system structure patterns in this example were simulated at 750-15000 nm, with the intrinsic film system structure a/B/T/a/B without the two metal reflective film layers interposed as a control group, and the results are shown in fig. 5, and the reflection spectrum of the locally amplified far infrared window band 8000-14000 nm is shown in fig. 6. As can be seen from fig. 5, all the film structures form a high-reflectivity photon forbidden band effect in the range of 3-5 μm in the mid-infrared window band, i.e. the film structure has very low emissivity and good mid-infrared stealth effect. Meanwhile, a 'concave' reflection spectrum phenomenon is formed in a far infrared window wave band interval 8-14 mu m, and a 'spectrum hole digging' effect is formed by taking a frequency domain of a 10.3-10.9 mu m wave band as a center. As shown in fig. 6, the reflectivity distribution of the far infrared window band is obviously that the "light trapping" notch shape part formed by the four film system structure modes (1), (2), (3) and (4) is narrower than the frequency band of the eigenstate film system structure a/B/T/a/B, and the reflectivity is lower. This demonstrates that the "spectral hole digging" effect of narrow-band low reflection can be better achieved by utilizing the F-P interference between two metal films and the photon local synergistic effect of the photonic crystal. However, their low reflection "trap" notch center frequency is not at the 10.6 μm laser frequency domain. When the number of medium layers sandwiched between the two metal films M (1) and M (2) is even, for example, the film system structure patterns (2) and (4) have a light trapping central frequency of less than 10.6 mu M; when the number of medium layers sandwiched between the two metal films M (1) and M (2) is odd, for example, the film system structure patterns (1) and (3) have a "light trapping" center frequency greater than 10.6 mu M. This is unfavorable for compatible stealth of 10.6 [ mu ] m laser and far infrared, but also becomes an important drawback of destroying far infrared stealth. In order to realize the compatible stealth function of the laser of 10.6 mu m and the mid-far infrared by utilizing the good F-P interference and photon local synergistic effect, error correction measures are needed to be adopted on the thickness of the dielectric film layer, so that the center frequency of a low-reflection 'light trapping' notch is shifted to the vicinity of the laser frequency domain of 10.6 mu m.
Taking the error correction compensation amount Δ=150 nm, for the film system structural patterns (1) and (v), there are: n is n A× d A ≈n B× d B ≈n T× d T Approximately 2650- Δ, i.e. n A× d A ≈n B× d B ≈n T× d T 2500; for the film structure patterns (2) and (4), there are: n is n A× d A ≈n B× d B ≈n T× d T Approximately 2650+Δ, i.e. n A× d A ≈n B× d B ≈n T× d T And 2800. Therefore, in the film structure patterns (1) and (3), the thicknesses of the dielectric layers a and T were modified to 1040nm, and the thicknesses of the dielectric layers B were modified to 2119 nm. In the film structure patterns (2) and (4), the thicknesses of the dielectric layers a and T are corrected to 1167 and nm, and the thickness of the dielectric layer B is corrected to 2373 and nm.
The reflectance characteristics of the film structure after the correction in the infrared band 750 to 15000 and nm were simulated and analyzed, and the results are shown in fig. 7 and 8. Obviously, the four film system structure patterns (1), (2), (3) and (4) after correction can also form a global high reflection phenomenon in the band interval of the mid-infrared window of 3-5 mu m, and the mid-infrared stealth effect is good. Meanwhile, after correction, the center frequency of the 'light trapping' frequency band of the four film system structure patterns at the far infrared window wave band of 8-14 mu m can be moved to the laser frequency domain of 10.6 mu m, namely, the laser has the lowest reflectivity at the laser frequency domain of 10.6 mu m, the values of the laser are smaller than 10%, the laser has the characteristic of narrow-band low reflection, and the laser and far infrared compatible stealth effect of 10.6 mu m can be better realized compared with the intrinsic film system structure A/B/T/A/B. In the embodiment, by inserting the two metal reflection film layers M (1) and M (2) into the doped photonic crystal film system structure A/B/T/A/B, the synergistic effect of F-P interference and photon local area is exerted, and the more excellent laser and infrared compatible stealth effect can be achieved.
The foregoing examples are provided to fully disclose and describe how to make and use the claimed embodiments by those skilled in the art, and are not intended to limit the scope of the disclosure herein. Modifications that are obvious to a person skilled in the art will be within the scope of the appended claims.
Claims (7)
1. A laser and middle-far infrared compatible stealth membrane system structure is characterized in that: is formed by inserting a metal reflecting film layer M1 and a metal reflecting film layer M2 into a doped photonic crystal film system structure A/B/T/A/B, and the basic structure is one of the following 4 types:
①A/B/T/A/M1/B/M2；
②A/B/T/M1/A/B/M2；
③A/B/M1/T/A/B/M2；
④A/M1/B/T/A/B/M2；
wherein the materials of the dielectric layer A, the dielectric layer B and the dielectric layer T are independently selected from ZnS, znO, znSe, al 2 O 3 、SiO 2 、TiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The materials of the metal reflecting film layer M1 and the metal reflecting film layer M2 are independently selected from Ag, au and Al;
the refractive indexes of the dielectric layer A, the dielectric layer B and the dielectric layer T at 10.6 mu m are respectively n A 、n B 、n T The thickness of the dielectric layer A, the dielectric layer B and the dielectric layer T are respectively d A 、d B 、d T The following relationship is provided: n is n A× d A ≈n B× d B ≈n T× d T Approximately (2650+/-delta) nm, wherein delta is the error correction compensation quantity, 75 delta is less than or equal to 300, and for structures (1) and (3), the "-" is taken, and for structures (2) and (4), the "+"; the thickness of the metal reflecting film layer M1 and the thickness of the metal reflecting film layer M2 are both 5-25 nm.
2. The laser and mid-far infrared compatible stealth film system structure of claim 1, wherein: the basic structure is (1)A/B/T/A/M1/B/M2; the material of the dielectric layer A and the material of the dielectric layer T are zinc selenide, and the refractive index at the 10.6 mu m position is 2.4; the material of the dielectric layer B is titanium dioxide, and the refractive index at 10.6 mu m is 1.18; the thicknesses of the dielectric layer A and the dielectric layer T are 1040nm, and the thickness of the dielectric layer B is 2119nm; the metal reflecting film layer M1 and the metal reflecting film layer M2 are Ag films, and the thicknesses are respectively 10nm and 20nm.
3. The laser and mid-far infrared compatible stealth film system structure of claim 1, wherein: the basic structure is (2)A/B/T/M1/A/B/M2; the material of the dielectric layer A and the material of the dielectric layer T are zinc selenide, and the refractive index at the 10.6 mu m position is 2.4; the material of the dielectric layer B is titanium dioxide, and the refractive index at 10.6 mu m is 1.18; the thicknesses of the dielectric layer A and the dielectric layer T are 1167nm, and the thickness of the dielectric layer B is 2373nm; the metal reflecting film layer M1 and the metal reflecting film layer M2 are Ag films, and the thicknesses are respectively 10nm and 20nm.
4. The laser and mid-far infrared compatible stealth film system structure of claim 1, wherein: the basic structure is (3)A/B/M1/T/A/B/M2; the material of the dielectric layer A and the material of the dielectric layer T are zinc selenide, and the refractive index at the 10.6 mu m position is 2.4; the material of the dielectric layer B is titanium dioxide, and the refractive index at 10.6 mu m is 1.18; the thicknesses of the dielectric layer A and the dielectric layer T are 1040nm, and the thickness of the dielectric layer B is 2119nm; the metal reflecting film layer M1 and the metal reflecting film layer M2 are Ag films, and the thicknesses are respectively 10nm and 20nm.
5. The laser and mid-far infrared compatible stealth film system structure of claim 1, wherein: the basic structure is (4)A/M1/B/T/A/B/M2; the material of the dielectric layer A and the material of the dielectric layer T are zinc selenide, and the refractive index at the 10.6 mu m position is 2.4; the material of the dielectric layer B is titanium dioxide, and the refractive index at 10.6 mu m is 1.18; the thicknesses of the dielectric layer A and the dielectric layer T are 1167nm, and the thickness of the dielectric layer B is 2373nm; the metal reflecting film layer M1 and the metal reflecting film layer M2 are Ag films, and the thicknesses are respectively 10nm and 20nm.
6. Use of the laser and mid-far infrared compatible stealth membrane system structure of any one of claims 1-5 as or in the preparation of an infrared and laser compatible stealth material.
7. The use according to claim 6, characterized in that: in specific application, the medium layers and the metal reflecting film layers are coated layer by layer on the surface of the substrate by adopting atomic layer deposition, magnetron sputtering and/or evaporation plating technology.
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