CN115061225A - Visible light, multi-frequency domain laser and middle and far infrared compatible stealth composite film material - Google Patents
Visible light, multi-frequency domain laser and middle and far infrared compatible stealth composite film material Download PDFInfo
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Abstract
The invention discloses a visible light, multi-frequency domain laser and middle and far infrared compatible stealth composite film material, and belongs to the technical field of multi-band compatible stealth materials. The heterogeneous membrane system structure is as follows: [ AB ]] k [CDC] m The film layer arrangement coefficients k and m represent the periodic alternate arrangement times, wherein the value of k is 1, 2, 3 or 4, and the value of m is 2, 4 or 6; the material of the dielectric layer A is selected from indium tin oxide, antimony tin oxide and aluminum-doped zinc oxide; the material of the dielectric layer B is selected from SiO and Y 2 O 3 、SmBO 3 、ZnO、SnO 2 、In 2 O 3 (ii) a The materials of the dielectric layers C and D are independently selected from Ge, Te, ZnS, ZnSe, PbTe and Al 2 O 3 、SiO 2 、TiO 2 、Si 3 N 4 . The composite film material has the low reflection characteristics of a plurality of laser frequency domains of 0.93 mu m, 1.06 mu m, 1.54 mu m and 10.6 mu m and the high reflection characteristics of a multi-band infrared wide domain of 3-5 mu m and 8-14 mu m of far infrared, and has very important engineering application value in the military field.
Description
Technical Field
The invention relates to a visible light, multi-frequency domain laser and middle and far infrared compatible stealth composite film material, and belongs to the technical field of multi-band compatible stealth materials.
Background
The stealth technology can effectively control or weaken the detectable signal characteristics of targets, and is a key high and new technology for improving the survival capability and the defense-outburst capability of important military equipment battlefield in all military and strong countries in the world. Detection and guidance technologies on modern battlefields are increasingly diversified, and multi-band advanced military reconnaissance equipment such as radars, lasers, infrared light, visible light and the like is jointly applied, so that multi-source detection information fusion can lock and rapidly destroy targets with extremely high precision. In particular, optical reconnaissance, infrared passive detection and laser active detection form a multi-mode composite guidance mode and are widely applied to accurately guided asymmetric lethal weapon such as missile. Therefore, the development of a multi-spectrum compatible stealth protection system such as visible light, infrared, laser and radar waves is an important subject in the current stealth field.
At present, laser detection and guidance wave bands mainly relate to four frequency domains of 0.93 [ mu ] m, 1.06 [ mu ] m, 1.54 [ mu ] m and 10.6 [ mu ] m, and particularly 1.06 [ mu ] m corresponding to a YAG laser and 10.6 [ mu ] m corresponding to a carbon dioxide laser are most commonly used. However, the laser wavelength is respectively located in the near infrared window band and the far infrared window band, and if the passive infrared detection and the active laser detection are to be compatible for stealth, the infrared reflectivity of the material must be improved and the reflectivity at the laser wavelength must be reduced at the same time, and the two stealth principles are contradictory in a certain sense and are difficult to be realized by the traditional stealth material. Particularly, the realization of the compatible stealth of multi-frequency-domain laser and multi-band infrared involves the limitations of cross-frequency domain, wide frequency domain, contradiction of stealth principle and the like, thereby becoming a main bottleneck problem which is compelled to overcome by the multi-spectrum compatible stealth technology.
The traditional visible light stealth material mainly adopts a multicolor camouflage coating technology, but is difficult to be completely fused with a multi-domain diversified combat complex background environment. The traditional infrared stealth material mainly adopts low-emissivity coatings such as a metal film, a semiconductor doped film, a dielectric/metal multilayer composite film, a diamond-like carbon film and the like, or reduces the target temperature by using a thermal protection coating, a forced cooling material, a phase change heat absorption material and the like, but the problem of low fusion degree of the target and the environmental infrared characteristics is also avoided. In order to achieve the effect of visible light and infrared compatible stealth, a plurality of researchers are keen to develop low-emissivity pigments, and low-emissivity fillers and pigments are mixed in a transparent resin in a physical mixing and doping mode to form a low-emissivity camouflage coating, so that a plurality of research results are obtained. The traditional laser stealth material technology mainly focuses on reducing the reflectivity of a target in laser working wave bands of 1.06 mu m, 10.6 mu m and the like to be lower by means of coating a laser stealth coating on strong absorption materials such as rare earth, semiconductor, plasma, conductive polymer and the like, so that the target achieves a laser stealth effect. However, these traditional stealth materials are difficult to overcome the huge contradiction that laser and infrared compatible stealth are difficult to reconcile on the stealth principle, i.e. infrared stealth requires that the material has high reflectivity, while laser stealth requires that the material has low reflectivity.
Modern battlefield photoelectric detection and guidance technology tends to develop in visible light, infrared, laser and other multi-spectrum compound modes, and new materials and new structures with multi-spectrum compatible optical stealth functions are urgently needed to be developed. Therefore, by utilizing the spectrum selection characteristic and the infrared radiation regulation and control characteristic of the photonic crystal and other metamaterial, a novel visible light, laser and infrared compatible multi-spectrum stealth composite material structure is formed through special micro-nano structure design and composite functional material development, and the method has very important engineering application value in the military field.
Disclosure of Invention
Aiming at the prior art, the invention provides a visible light, multi-frequency-domain laser and middle and far infrared compatible stealth composite film material. The invention designs a novel composite film material with a specific film system structure by utilizing a functional material and a photonic crystal with certain infrared selectivity regulation and control characteristics, so that the novel composite film material can show a specific color, and also has the low reflection characteristics of a plurality of laser frequency domains of 0.93 mu m, 1.06 mu m, 1.54 mu m and 10.6 mu m and the high reflection characteristics of a multi-band infrared wide domain of 3-5 mu m of mid-infrared and 8-14 mu m of far infrared.
The invention is realized by the following technical scheme:
a visible light, multi-frequency domain laser and middle and far infrared compatible stealth composite film material has a heterogeneous film system structure as follows: [ AB ]] k [CDC] m The film layer arrangement coefficients k and m represent the periodic alternate arrangement times, k takes the value of 1, 2, 3 or 4, and m takes the value of 2, 4 or 6;
the material of the dielectric layer A is selected from indium tin oxide (ITO, In) 2 O 3 Sn), antimony tin oxide (ATO, Sn) 2 Sb, O), aluminum-doped zinc oxide (AZO, ZnO, Al);
the material of the dielectric layer B is selected from SiO and Y 2 O 3 、SmBO 3 、ZnO、SnO 2 、In 2 O 3 ；
The materials of the dielectric layer C and the dielectric layer D are independently selected from Ge, Te, ZnS, ZnSe, PbTe and Al 2 O 3 、SiO 2 、TiO 2 、Si 3 N 4 ；
The refractive indexes of the dielectric layer A and the dielectric layer B at the visible light wavelength of 400-600 nm are respectivelyIs n A 、n B The refractive indexes of the dielectric layer C and the dielectric layer D at the position of 10.6 mu m are n respectively C 、n D The thicknesses of the dielectric layer A, the dielectric layer B, the dielectric layer C and the dielectric layer D are D respectively A 、d B 、d C 、d D Having the following relationship: n is not more than 200 nm A× d A +n B× d B Less than or equal to 300 nm, and n C× d C ≈n D× d D ≈2650nm。
The visible light, multi-frequency-domain laser and middle and far infrared compatible stealth composite film material is applied to the preparation of infrared and laser compatible stealth materials. In specific application, the film system structure can be prepared by coating each dielectric layer by layer on the surface of the substrate by adopting advanced micro-nano manufacturing technologies such as atomic layer deposition, magnetron sputtering, evaporation plating and the like. The substrate is selected from Indium Tin Oxide (ITO), Antimony Tin Oxide (ATO), quartz, PET, and the like.
The visible light, multi-frequency-domain laser and middle and far infrared compatible stealth composite film material can present specific colors and has the low reflection characteristics of a plurality of laser frequency domains of 0.93 mu m, 1.06 mu m, 1.54 mu m and 10.6 mu m and the high reflection characteristics of a multi-band infrared wide domain of middle infrared of 3-5 mu m and far infrared of 8-14 mu m.
The visible light, multi-frequency domain laser and middle and far infrared compatible stealth composite film material is formed by a photonic crystal film system structure [ AB] k And [ CDC ]] m A laminated structure composed of a combination of [ AB ] and [ B] k The material of the intermediate layer A is selected from step type infrared reflection characteristic materials such as Indium Tin Oxide (ITO), Antimony Tin Oxide (ATO), aluminum-doped zinc oxide (AZO) and the like, and low reflection at near infrared and high reflection at medium and far infrared can be realized by modulation doping. Intrinsic plasma frequency wavelength λ p =1.124 μm, such as ITO, just as well as near-infrared laser 0.93 μm (CaAs laser), 1.06 μm (Nd) 3+ YAG laser), the average transmittance of the ITO film at visible light and near infrared laser can reach over 80%, and the reflectance of middle and far infrared is higher than 85%. The resistivity of the semiconductor ZAO can reach 10 -4 Omega cm, carrier concentration up to 1020 cm -3 Visible light (visible light)The transmittance of the material and near infrared laser reaches more than 80%, and the reflectivity of the medium and far infrared is as high as 85%. The material of the dielectric layer B is selected from SiO and Y 2 O 3 、SmBO 3 、ZnO、SnO 2 、In 2 O 3 The equal-digging-hole type infrared reflection characteristic material can realize strong absorption at specific infrared wavelength by changing the doping concentration of the film material. Film system structure [ AB] k The phase-step type infrared reflection characteristic material and the hole-digging type infrared reflection characteristic material are periodically and alternately arranged and combined, the high reflection phenomenon of specific visible light is realized, the structural color is presented, the low reflection characteristics of laser at three positions of a near-infrared waveband of 0.93 mu m, 1.06 mu m and 1.54 mu m are realized, and the compatible stealth effect of the visible light and several frequency domain lasers in a near-infrared waveband interval is realized. Photonic crystal structure [ CDC] m The material of the dielectric layer C and the dielectric layer D is selected from Ge, Te, ZnS, ZnSe, PbTe and Al 2 O 3 、SiO 2 、TiO 2 、Si 3 N 4 When the optical thin film material is used, the photon local effect at the 10.6 mu m laser frequency domain is realized by using the doped defect film layer, and the spectrum hole digging effect of the far infrared 8-14 mu m waveband high reflection band is realized, so that the phenomenon of narrow-band light trapping with low emission is generated, and the compatible stealth of the 10.6 mu m laser and the middle and far infrared is realized. According to the invention, a material combination with specific infrared regulation and control characteristics is selected and designed into a composite thin film material with a special film system structure, so that the compatible stealth effect of visible light, multi-frequency-domain laser and middle and far infrared rays is realized. The invention skillfully utilizes the combination of a fine microstructure design and materials with specific infrared regulation and control characteristics, better solves the problems of the stealth fields such as contradiction of the current laser/infrared stealth principle, wide-frequency-domain infrared stealth, multi-band laser cross-frequency-domain coexistence and the like, provides an important solution for the joint detection and composite guidance of resisting visible light, infrared and laser, is beneficial to improving the battlefield viability and the defense capability of equipment, and has very important engineering application value in the military field.
The various terms and phrases used herein have the ordinary meaning as is well known to those skilled in the art.
Drawings
FIG. 1: the heterogeneous membrane system of example 1 is schematically shown.
FIG. 2: a schematic of the visible reflectance spectrum of example 1.
FIG. 3: schematic diagram of the mid-far infrared reflection spectrum of example 1.
FIG. 4: a schematic of the near infrared reflectance spectrum of example 1.
FIG. 5: the structure of the heterogeneous membrane system of example 2 is schematically shown.
FIG. 6: a schematic of the visible light reflectance spectrum of example 2.
FIG. 7 is a schematic view of: the spectrum of the mid-far infrared reflection spectrum of example 2 is shown.
FIG. 8: near infrared reflectance spectrum of example 2.
Detailed Description
The present invention will be further described with reference to the following examples. However, the scope of the present invention is not limited to the following examples. It will be understood by those skilled in the art that various changes and modifications may be made to the invention without departing from the spirit and scope of the invention.
The instruments, reagents, materials and the like used in the following examples are conventional instruments, reagents, materials and the like in the prior art and are commercially available in a normal manner unless otherwise specified. Unless otherwise specified, the experimental methods, detection methods, and the like described in the following examples are conventional experimental methods, detection methods, and the like in the prior art.
Example 1 invisible composite film Material compatible with visible light, Multi-frequency Domain laser and Medium-far Infrared
The heterogeneous membrane system structure is as follows: [ AB ]] k [CDC] m As shown in fig. 1, the film arrangement coefficients k and m represent the number of periodic alternate arrangement, where k is 3 and m is 2; are prepared on a transparent Indium Tin Oxide (ITO) substrate (which may be by atomic layer deposition techniques). The material of the dielectric layer A is selected from Indium Tin Oxide (ITO), the material has step type infrared reflection spectrum characteristics, and low reflection in near infrared and high reflection in middle and far infrared can be realized by modulation doping; the material of the dielectric layer B is selected from one oxideSilicon (SiO), the material has hole digging type infrared reflection characteristics, and selective absorption can be realized at specific wavelengths of near infrared 1.06 mu m and the like by changing doping concentration; refractive index n of dielectric layer A at 500 nm A Is 1.8, the thickness d of the dielectric layer A A Is 70 nm; refractive index n of dielectric layer B at 500 nm B Thickness d of dielectric layer B of 2 B Is 65 nm. The material of the dielectric layer C is selected from tellurium (Te) at a wavelength of lambda 0 The refractive index at the position of =10.6 mu m is 4.79, and the thickness d of the dielectric layer C C Is 553 nm. The material of the dielectric layer D is selected from zinc sulfide (ZnS) at a wavelength lambda 0 The refractive index at the position of =10.6 mu m is 2.2, and the thickness D of the dielectric layer D D Is 1205 nm. The refractive index and the thickness of each dielectric layer have the following relationship: n is not more than 200 nm A× d A +n B× d B Less than or equal to 300 nm, and n C× d C ≈n D× d D ≈2650nm。
Analog computation membrane system structure [ AB] 3 [CDC] 2 The reflection spectrum characteristic of the visible light wave band (350-750 nm interval) on the surface of the composite material is as shown in fig. 2, because a photon forbidden band effect forms an obvious wide-area high reflection band, the central wavelength of the characteristic reflection peak is about 625 nm, and the characteristic reflection peak is located in the orange visible light 590-650 nm wave band, therefore, the heterogeneous membrane system structure [ AB ] of the embodiment] 3 [CDC] 2 The composite material exhibited an orange structural color.
Analog computation membrane system structure [ AB] 3 [CDC] 2 According to the reflection spectrum characteristic of the mid-far infrared wave band (2500-15000 nm interval) on the surface of the composite material, as shown in fig. 3, a low-reflection 'light trapping' narrow band phenomenon exists only near 3.5 mu m in the 3-5 mu m interval of the mid-infrared window, and the high-reflection characteristic is achieved in the 3-5 mu m areas of other infrared windows due to the 'photon forbidden band' effect, so that the composite material has a good mid-infrared stealth effect. Meanwhile, in the 8-15 mu m area of the far infrared window, due to the photon local area effect of the heterogeneous photonic crystal, a remarkable low-reflection light trapping narrow band is formed near the 10.6 mu m frequency domain, and the high-reflection characteristic is also realized in other 8-15 mu m areas due to the photon forbidden band effect, so that the method can be well realizedThe laser with the wavelength of 10.6 mu m and far infrared are compatible with the stealth effect. Thus, the membrane system structure [ AB] 3 [CDC] 2 The composite material has a good compatible stealth effect in a 10.6 mu m frequency domain laser and 3-5 mu m and 8-15 mu m of middle and far infrared rays.
Analog computation membrane system structure [ AB ]] 3 [CDC] 2 As shown in FIG. 4, the reflection spectrum characteristic of the near-infrared band (750-2500 nm interval) on the surface of the composite material generally has a lower reflectivity in a 900-1600 nm area due to the combined effect of the infrared selective control characteristic material and the multilayer thin film interference, the area covers three laser frequency domains of 0.93 μm, 1.06 μm and 1.54 μm, the reflectivity of the laser frequency domains is respectively about 15%, 20% and 5%, and the compatible stealth effect of the three laser frequency domains in the near-infrared band interval is facilitated.
In summary, the film system structure [ AB ] of the present embodiment] 3 [CDC] 2 The composite material utilizes a functional material with infrared selectivity regulation and control characteristics and a special photonic crystal artificial micro-nano structure with comprehensive effects of photonic forbidden bands, photonic local area and the like, can show orange gloss in a visible light wave band, has a low reflection characteristic compatible with multiple lasers of 0.93 mu m, 1.06 mu m, 1.54 mu m and 10.6 mu m in a cross-frequency domain, and can also show a wide-domain high reflection characteristic in a middle infrared range of 3-5 mu m and a far infrared range of 8-14 mu m, so that a multi-spectrum compatible stealth effect of visible light, multi-frequency-domain laser and middle and far infrared is realized.
Example 2 visible light, multi-frequency range laser and middle and far infrared compatible stealth composite film material
The heterogeneous membrane system structure is as follows: [ AB ]] k [CDC] m As shown in fig. 5, the film arrangement coefficients k and m represent the number of periodic alternate arrangement, where k is 2 and m is 4; is prepared on a transparent substrate of transparent and flexible PET (which can be prepared by a magnetron sputtering technology). The material of the dielectric layer A is selected from Antimony Tin Oxide (ATO), the material has the characteristic of step-type infrared reflection spectrum, and the low reflection in the near infrared and the high reflection in the middle and far infrared can be realized by modulation doping; the material of the dielectric layer B is selected from zinc oxide (ZnO), the material has a hole digging type infrared reflection characteristic, and the near infrared 1.06 mu can be realized by changing the doping concentrationm and other specific wavelengths realize selective absorption; refractive index n of dielectric layer A at 500 nm A Is 1.8, the thickness d of the dielectric layer A A Is 55 nm; refractive index n of dielectric layer B at 500 nm B Is 2.04, the thickness d of the dielectric layer B B Is 50 nm. The material of the dielectric layer C is selected from zinc selenide (ZnSe) at a wavelength lambda 0 The refractive index at the position of =10.6 mu m is 2.4, and the thickness d of the dielectric layer C C 1104 nm. The material of the dielectric layer D is selected from titanium dioxide (TiO) 2 ) At a wavelength λ 0 The refractive index at position of =10.6 mu m is 1.18, and the thickness D of the dielectric layer D D Was 2246 nm. The refractive index and thickness of each dielectric layer have the following relationship: n is not more than 200 nm A× d A +n B× d B Less than or equal to 300 nm, and n C× d C ≈n D× d D ≈2650nm。
Analog computation membrane system structure [ AB] 2 [CDC] 4 As shown in FIG. 6, the reflection spectrum of the visible light band (350-750 nm interval) on the surface of the composite material forms an obvious wide-range high reflection band due to the "photon forbidden band" effect of the film structure, the central wavelength of the characteristic reflection peak is about 550 nm, and the characteristic reflection peak is located in the green visible light 490-570 nm band, so that the heterogeneous film structure [ AB ] of the embodiment] 2 [CDC] 4 The composite material exhibited a structural color of green.
Analog computation membrane system structure [ AB] 2 [CDC] 4 The reflection spectrum characteristic of the mid-far infrared band (2500-15000 nm interval) on the surface of the composite material is shown in figure 7, and the reflection spectrum characteristic is high in the mid-infrared window 4-5 mu m interval due to the photon forbidden band effect of the membrane system structure, so that the composite material has a good mid-infrared stealth effect. Meanwhile, in the 8-15 mu m area of the far infrared window, three low-reflection light trapping narrow bands are formed near the frequency domains of 9 mu m, 10.6 mu m and 12.6 mu m due to the photon local area effect of the heterogeneous photonic crystal, and the high-reflection characteristic is formed in the 8-15 mu m area of other infrared windows due to the photon forbidden band effect, so that the 10.6 mu m laser and far infrared compatible stealth effect can be well realized. In addition, it was found through studies that the heterogeneous membrane system structure [ AB] k [CDC] m In an area of 8-15 mu mThe number n of narrow low reflection "light trapping" bands has a relation of n = m-1 with the number m of cycles, which also means that the far infrared stealth effect is rather worse as the number m of cycles is larger. Meanwhile, when m =2, 4 and 6, the central wavelength of the most middle low-reflection 'light trapping' narrow band can be better ensured to be in the vicinity of the 10.6μm frequency domain. Therefore, the heterogeneous membrane system structure composite material has a good compatible stealth effect in the 10.6 mu m frequency domain laser and the middle and far infrared.
Analog computation membrane system structure [ AB] 2 [CDC] 4 As shown in FIG. 8, the reflection spectrum characteristic of the near-infrared band (750-2500 nm interval) on the surface of the composite material generally has a lower reflectivity in a 900-1700 nm area due to the combined effect of the infrared selective control characteristic material and the multilayer thin film interference, the three laser frequency domains of 0.93 μm, 1.06 μm and 1.54 μm are covered in the area, and the reflectivities of the three laser frequency domains are respectively about 5%, 15% and 35%, so that the composite material is beneficial to realizing the compatible stealth effect of the three laser frequency domains in the near-infrared band interval.
In summary, the film system structure [ AB ] of the present embodiment] 3 [CDC] 2 The S composite material utilizes the infrared selectivity control characteristic material and the comprehensive effects of photon forbidden bands, photon local area and the like, can present green gloss in a visible light wave band, has the low reflection characteristics of cross-frequency domain compatibility of a plurality of lasers of 0.93 mu m, 1.06 mu m, 1.54 mu m and 10.6 mu m, and can present wide-domain high reflection characteristics in the middle infrared region of 4-5 mu m and the far infrared region of 8-14 mu m, thereby realizing the multi-frequency spectrum compatible stealth effect of visible light, multi-frequency domain laser and middle and far infrared.
The above examples are provided to those of ordinary skill in the art to fully disclose and describe how to make and use the claimed embodiments, and are not intended to limit the scope of the disclosure herein. Modifications apparent to those skilled in the art are intended to be within the scope of the appended claims.
Claims (6)
1. The visible light, multi-frequency domain laser and middle and far infrared compatible stealth composite film material is characterized in that the heterogeneous film system structure is as follows: [ AB ]] k [CDC] m The film arrangement coefficients k and m represent periodic alternate arrangementThe number of times, k is 1, 2, 3 or 4, and m is 2, 4 or 6;
the material of the dielectric layer A is selected from indium tin oxide, antimony tin oxide and aluminum-doped zinc oxide;
the material of the dielectric layer B is selected from SiO and Y 2 O 3 、SmBO 3 、ZnO、SnO 2 、In 2 O 3 ；
The materials of the dielectric layer C and the dielectric layer D are independently selected from Ge, Te, ZnS, ZnSe, PbTe and Al 2 O 3 、SiO 2 、TiO 2 、Si 3 N 4 ；
The refractive indexes of the dielectric layer A and the dielectric layer B at the visible light wavelength of 400-600 nm are respectively n A 、n B The refractive indexes of the dielectric layer C and the dielectric layer D at the position of 10.6 mu m are n respectively C 、n D The thicknesses of the dielectric layer A, the dielectric layer B, the dielectric layer C and the dielectric layer D are D respectively A 、d B 、d C 、d D Having the following relationship: n is more than or equal to 200 nm A× d A +n B× d B Less than or equal to 300 nm, and n C× d C ≈n D× d D ≈2650nm。
2. The visible light, multi-frequency domain laser and mid-far infrared compatible stealth composite film material according to claim 1, characterized in that: k is 3 and m is 2; the material of the dielectric layer A is selected from indium tin oxide; the material of the dielectric layer B is selected from silicon monoxide; refractive index n of dielectric layer A at 500 nm A Is 1.8, the thickness d of the dielectric layer A A Is 70 nm; refractive index n of dielectric layer B at 500 nm B Thickness d of dielectric layer B of 2 B Is 65 nm; the material of the dielectric layer C is selected from tellurium at a wavelength of lambda 0 The refractive index at position of =10.6 mu m is 4.79, and the thickness d of the dielectric layer C C Is 553 nm; the material of the dielectric layer D is selected from zinc sulfide at the wavelength lambda 0 The refractive index at the position of =10.6 mu m is 2.2, and the thickness D of the dielectric layer D D Is 1205 nm.
3. The visible light, multi-frequency domain laser and mid-far infrared compatible cloaking of claim 1The composite film material is characterized in that: k is 2 and m is 4; the material of the dielectric layer A is selected from tin antimony oxide; the material of the dielectric layer B is selected from zinc oxide; refractive index n of dielectric layer A at 500 nm A Is 1.8, the thickness d of the dielectric layer A A Is 55 nm; refractive index n of dielectric layer B at 500 nm B Is 2.04, the thickness d of the dielectric layer B B Is 50 nm; the material of the dielectric layer C is selected from zinc selenide and has a wavelength lambda 0 The refractive index at the position of =10.6 mu m is 2.4, and the thickness d of the dielectric layer C C 1104 nm; the material of the dielectric layer D is selected from titanium dioxide, which has a wavelength lambda 0 The refractive index at position of =10.6 mu m is 1.18, and the thickness D of the dielectric layer D D Was 2246 nm.
4. The use of the visible light, multi-frequency domain laser and mid-far infrared compatible stealth composite film material of any one of claims 1-3 as or in the preparation of infrared and laser compatible stealth materials.
5. Use according to claim 4, characterized in that: in specific application, the dielectric layers are coated on the surface of the substrate layer by adopting atomic layer deposition, magnetron sputtering and/or evaporation plating.
6. Use according to claim 5, characterized in that: the substrate is selected from ITO, ATO, quartz or PET.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115449115A (en) * | 2022-10-12 | 2022-12-09 | 中国人民解放军火箭军工程大学 | Flexible high-weather-resistance high-transparency low-radiation infrared stealth heterogeneous film |
| CN115508921A (en) * | 2022-10-17 | 2022-12-23 | 中国人民解放军国防科技大学 | Visible light compatible near-infrared laser stealth antireflection film |
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| CN115449115A (en) * | 2022-10-12 | 2022-12-09 | 中国人民解放军火箭军工程大学 | Flexible high-weather-resistance high-transparency low-radiation infrared stealth heterogeneous film |
| CN115449115B (en) * | 2022-10-12 | 2023-04-25 | 中国人民解放军火箭军工程大学 | Flexible high weather-resistant high-transparency low-radiation infrared stealth heterogeneous film |
| CN115508921A (en) * | 2022-10-17 | 2022-12-23 | 中国人民解放军国防科技大学 | Visible light compatible near-infrared laser stealth antireflection film |
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