CN115061230B - Intelligent stealth composite film material compatible with dual-frequency-domain laser and multiband infrared - Google Patents

Intelligent stealth composite film material compatible with dual-frequency-domain laser and multiband infrared Download PDF

Info

Publication number
CN115061230B
CN115061230B CN202210549211.5A CN202210549211A CN115061230B CN 115061230 B CN115061230 B CN 115061230B CN 202210549211 A CN202210549211 A CN 202210549211A CN 115061230 B CN115061230 B CN 115061230B
Authority
CN
China
Prior art keywords
dielectric layer
infrared
composite film
thickness
compatible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202210549211.5A
Other languages
Chinese (zh)
Other versions
CN115061230A (en
Inventor
王龙
汪刘应
刘顾
葛超群
唐修检
柏林冲
王文豪
许可俊
王伟超
胡灵杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rocket Force University of Engineering of PLA
Original Assignee
Rocket Force University of Engineering of PLA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rocket Force University of Engineering of PLA filed Critical Rocket Force University of Engineering of PLA
Priority to CN202210549211.5A priority Critical patent/CN115061230B/en
Publication of CN115061230A publication Critical patent/CN115061230A/en
Application granted granted Critical
Publication of CN115061230B publication Critical patent/CN115061230B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

The invention discloses an intelligent stealth composite film material compatible with dual-frequency domain laser and multiband infrared, and belongs to the technical field of multiband compatible intelligent stealth materials. The structure is as follows: [ AB] k T[AB] k [CD]M[CD]Or [ CD ]]M[CD][AB] k T[AB] k K is 1 or 2; the materials of the dielectric layers T and M are independently selected from transition metal oxides or polysilicon; at least one of the dielectric layer A, the dielectric layer B, the dielectric layer C and the dielectric layer D is made of a material selected from halide, transition metal oxide or polysilicon, and the other layers are made of a material independently selected from ZnS, znSe, pbTe, al 2 O 3 、Te、Ge、SiO 2 、TiO 2 Or Si (or) 3 N 4 . The intelligent stealth composite film material provided by the invention has the compatible stealth functions of 1.06 mu m and 10.6 mu m double-frequency-domain laser and near infrared, mid infrared and far infrared multiband infrared, has the advantages of various regulation and control modes such as light control, heat control, electric control and composite control, and has very important military application value.

Description

Intelligent stealth composite film material compatible with dual-frequency-domain laser and multiband infrared
Technical Field
The invention relates to an intelligent stealth composite film material compatible with dual-frequency domain laser and multiband infrared, belonging to the technical field of multiband compatible intelligent stealth materials.
Background
Military equipment targets on modern battlefields face a multi-dimensional detection threat environment of space, sky, land, and sea, once found, which is difficult to break away from the threat of being struck and destroyed by an accurately guided weapon. The current detection and guidance technology is increasingly diversified, and relates to multi-band joint detection and multi-mode guidance of radar, laser, infrared, visible light and the like, and the target can be locked with extremely high precision and quickly destroyed through multi-source multi-dimensional detection information fusion. However, the present stealth technology has the limitations of single function and static and passive, and most technologies can only better avoid single-band detection, but cannot avoid multiple combined detection means. Therefore, development of a multi-spectrum compatible stealth protection system such as visible light, infrared, laser and radar waves is an important subject in the stealth field at present.
The laser detection and guidance wave band mainly is 1.06 mu m corresponding to the YAG laser and 10.6 mu m corresponding to the carbon dioxide laser, and the two laser wavelengths are just in near infrared window wave bands and far infrared window wave bands respectively. When facing the active detection mode of laser, the stealth material or structure is required to have low reflectivity and high absorptivity for the incident laser, so that the echo power is greatly reduced. However, in the face of such passive detection of infrared, it is desirable that the stealth material or structure have a high reflectivity and low emissivity for infrared radiation, thereby effectively suppressing infrared radiation. The two stealth principles are contradicted in a certain sense, are difficult to be realized by the traditional stealth materials, and become the bottleneck problem of the multi-frequency spectrum compatible stealth technology. The traditional laser stealth material mainly comprises indium tin oxide (ITO, in) 2 O 3 Sn), aluminum-doped zinc oxide (AZO, znO: al), zinc oxide (ZnO) and other doped semiconductor materials or rare earth doped spectrum conversion materialsThe infrared stealth materials are mainly concentrated in low-emissivity coatings such as metal thin films, semiconductor doped films, dielectric/metal multilayer composite films, diamond-like carbon films and the like. Traditional stealth materials are always difficult to reconcile the contradiction between the two stealth principles (i.e., infrared stealth requires materials with high reflectivity and laser stealth requires materials with low reflectivity), and compatible stealth of laser and infrared cannot be achieved. The super-structure materials such as photonic crystals, selective absorbers and the like become an important way for breaking through the compatible stealth of laser and infrared because of good spectrum selection and infrared radiation regulation and control characteristics.
Military equipment often relates to various cross-domain combat scenes such as mountain lands, grasslands, deserts and the like, and even the photoelectric thermo-magnetic target characteristics of the same-region scenes can change along with the change of seasons and time. Therefore, if the military equipment adopts a static stealth method, the military equipment is difficult to realize high fusion on surrounding combat background environments, and is extremely easy to expose in the combat process of the cross-multi-domain environment, the combat process of the whole day or the motor combat process. Therefore, intelligent stealth technology capable of actively controlling own target characteristics is another hot spot and difficulty in research in the stealth technical field. The current adaptive infrared stealth technologies such as electrorheological emissivity, phase change heat absorption and the like are highly valued in the stealth field at home and abroad, but the pace is difficult to hold, and the progress is slow; the breakthrough of engineering application is not completely achieved in the technical aspect of static stealth materials of laser, and the breakthrough is very little in intelligent stealth.
In a word, the existing stealth technology has the limitations of single function and static and passive, and most of the technologies can only better avoid single-wave-band detection, cannot simultaneously cope with multiple combined detection means in modern high-technology wars, and causes a great crisis for the survival of the equipped battlefield. Therefore, the front technology such as super-structured materials and intelligent materials is comprehensively utilized, and the special artificial structure composite material with the multi-spectrum compatible intelligent stealth function of driving and controlling multiple physical fields such as light, heat, electricity and the like is developed, so that the special artificial structure composite material has very important military application value.
Disclosure of Invention
Aiming at the prior art, the invention provides an intelligent stealth composite film material which can be driven by light, heat, electricity and other external fields and is compatible with dual-frequency domain laser and multiband infrared.
The invention is realized by the following technical scheme:
the intelligent stealth composite film material compatible with double frequency domain laser and multiband infrared has the basic structure of multilayer film compounding: [ AB] k T[AB] k [CD]M[CD]Or [ CD ]]M[CD][AB] k T[AB] k The film layer arrangement coefficient k represents the number of periodical alternate arrangement, and takes a value of 1 or 2;
the materials of the dielectric layers T and M are independently selected from transition metal oxides or polysilicon;
at least one of the dielectric layer A, the dielectric layer B, the dielectric layer C and the dielectric layer D is made of a material selected from halide, transition metal oxide or polysilicon, and the other layers are made of a material independently selected from ZnS, znSe, pbTe, al 2 O 3 、Te、Ge、SiO 2 、TiO 2 Or Si (or) 3 N 4 ；
The refractive indexes of the dielectric layer A, the dielectric layer B, the dielectric layer C, the dielectric layer D, the dielectric layer T and the dielectric layer M are respectively n A 、n B 、n C 、n D 、n T 、n M The thicknesses of the dielectric layer A, the dielectric layer B, the dielectric layer C, the dielectric layer D, the dielectric layer T and the dielectric layer M are respectively D A 、d B 、d C 、d D 、d T 、d M The following relationship is provided: n is n A× d A ≈n B× d B ≈n T× d T 26. 2650 nm, and n c× d c ≈n D× d D ≈n M× d M ≈265 nm。
Further, the saidThe transition metal oxide is selected from the oxides of Ti, V, mo, W, namely: tiO (titanium dioxide) 2 、V 2 O 5 、MoO 3 、WO 3 。
Further, the halide salt is selected from silver chloride and copper chloride. The halide salt is used as a photosensitive material, and a small amount of copper oxide serving as a catalyst is doped in the photosensitive material, which is a conventional technical means.
The intelligent stealth composite film material compatible with the dual-frequency domain laser and the multiband infrared is applied to being used as or preparing the infrared and laser compatible stealth material. In specific application, the composite film material can be prepared by coating each dielectric layer on the surface of a substrate by adopting the technologies of atomic layer deposition, magnetron sputtering, evaporation plating and the like. The substrate is selected from ITO, tin antimony oxide (ATO, sn) 2 O: sb) or the like, or a flexible conductive substrate such as low-resistance ITO-PET or the like.
The intelligent stealth composite film material compatible with the double-frequency-domain laser and the multiband infrared has the compatible stealth functions of the double-frequency-domain laser with the wavelength of 1.06 mu m, 10.6 mu m and the multiband infrared with the wavelength of 1 to 2.5 mu m, 3 to 5 mu m in the middle infrared and 8 to 14 mu m in the far infrared, breaks through key technologies such as wide-domain infrared stealth, cross-domain laser and the like, and can be used for preparing infrared and laser compatible stealth materials. The novel stealth composite film material also has the advantages of various regulation and control modes such as light control, heat control, electric control and composite control, so that the infrared spectrum selection characteristic of the intelligent stealth material is easier to control, the laser reflectivity and the infrared emissivity of the composite film material can be controlled in real time according to functional requirements, the target characteristics of equipment are better adapted to the dynamic change of complex background environment characteristics of a battlefield, the composite detection and guidance modes of infrared and laser are avoided, the battlefield camouflage viability of the equipment is greatly improved, and the novel stealth composite film material has very important military application value.
The invention relates to an intelligent stealth composite film material compatible with double-frequency domain laser and multiband infrared, which consists of two double-hetero photonic crystal structures [ AB ] containing a doped defect film layer (T or M)] n T[AB] n And [ CD ]]M[CD]A laminated structure formed by combination and superposition, wherein, the dielectric layer T,The material of the dielectric layer M is transition metal oxide or polysilicon, and the material is extremely easy to be induced by physical field quantities such as ultraviolet rays, temperature, electric fields and the like to change microstructure structures, so that the dielectric constant and refractive index of the material are changed. At least one of the medium layer A, the medium layer B, the medium layer C and the medium layer D is made of halide salt photosensitive material, transition metal oxide or polysilicon photo-thermal material, and the other layers are made of ZnS, znSe, pbTe, al 2 O 3 、Te、Ge、SiO 2 、TiO 2 、Si 3 N 4 And optical film materials. The film layer arrangement coefficient k represents the number of periodical alternate arrangement, and takes a value of 1 or 2, so that the influence of the overlarge film layer arrangement period number k on the low reflection effect at the laser frequency domain is avoided.
The intelligent stealth composite film material compatible with the double-frequency-domain laser and the multiband infrared is a composite film material capable of being driven by light, heat and electricity in multiple fields. The invention is realized by the method of the invention for the CD]M[CD]Introducing a defect layer M, p [ AB] n T[AB] n The defect layer T is introduced, corresponding defect energy levels are formed near the 1.06 mu m and 10.6 mu m double-laser frequency domains to form a photon local effect, hole digging is realized in a high-reflection spectrum wide forbidden band of a near infrared band of 1-2.5 mu m and a far infrared band of 8-14 mu m, and a narrower low-reflectivity band is formed at the 1.06 mu m and 10.6 mu m laser frequency domains, so that compatible stealth effects of double-frequency domain laser and near-mid-far multiband infrared are realized. Simultaneously, the invention also utilizes the sensibility of the transition metal oxide, the polysilicon and other materials to the physical field stimulation of external light, heat, electricity and the like to induce physical property change, can regulate and control the dielectric constant and refractive index of the dielectric layer where the corresponding material is positioned according to the external environment change, further can dynamically regulate and control and change the infrared light wave conduction characteristic in the composite film material in real time, and realizes the characteristic of reversible emissivity change.
The various terms and phrases used herein have the ordinary meaning known to those skilled in the art.
Drawings
Fig. 1: the dual-frequency domain laser and multiband infrared compatible intelligent stealth composite film material of example 1 is schematic.
Fig. 2: light control mode schematic diagram
Fig. 3: schematic of thermal control.
Fig. 4: an electric control mode schematic diagram.
Fig. 5: schematic of the infrared reflectance spectrum of example 1.
Fig. 6: near infrared reflectance spectrum of example 1 is schematically represented.
Fig. 7: reflection spectrum diagrams around the 10-12 [ mu ] m frequency domain of example 1.
Fig. 8: example 2 is a schematic diagram of a dual frequency domain laser and multiband infrared compatible intelligent stealth composite film material.
Fig. 9: schematic of the infrared reflectance spectrum of example 2.
Fig. 10: near infrared reflectance spectrum of example 2 is schematically represented.
Detailed Description
The invention is further illustrated below with reference to examples. However, the scope of the present invention is not limited to the following examples. Those skilled in the art will appreciate that various changes and modifications can be made to the invention without departing from the spirit and scope thereof.
The instruments, reagents, materials, etc. used in the examples described below are conventional instruments, reagents, materials, etc. known in the art, and are commercially available. The experimental methods, detection methods, and the like in the examples described below are conventional experimental methods, detection methods, and the like that are known in the prior art unless otherwise specified.
Example 1 Intelligent stealth composite film Material compatible with Dual frequency Domain laser and Multiband Infrared
The heterogeneous membrane system structure is [ AB] k T[AB] k [CD]M[CD]K=2, as shown in fig. 1, can be prepared by atomic layer deposition techniques on an electrically conductive Indium Tin Oxide (ITO) substrate. Wherein the materials of the dielectric layer B and the dielectric layer D are SiO 2 ，SiO 2 The refractive indices at two places of 1.06 [ mu ] m and 10.6 [ mu ] m are 1.45 and 2.5 respectively. The material of the medium layer A and the medium layer T is polysilicon, and the polysilicon is 10 under the indoor normal temperature (25 ℃) and no electric field.6. The refractive index at [ mu ] m is 3.42. The material of the dielectric layer C and the material of the dielectric layer M are WO 3 WO at room temperature (25 ℃) and without the action of an electric field 3 The refractive index at 1.06 μm is 1.95.
The refractive indexes of the dielectric layer A, the dielectric layer B, the dielectric layer C, the dielectric layer D, the dielectric layer T and the dielectric layer M are respectively n A 、n B 、n C 、n D 、n T 、n M The thicknesses of the dielectric layer A, the dielectric layer B, the dielectric layer C, the dielectric layer D, the dielectric layer T and the dielectric layer M are respectively D A 、d B 、d C 、d D 、d T 、d M The following relationship is provided: n is n A× d A ≈n B× d B ≈n T× d T 26. 2650 nm, and n c× d c ≈n D× d D ≈n M× d M And 265 and nm. Specifically, the thickness of each dielectric layer is: the thickness of the dielectric layer A is 775 and nm; the thickness of the dielectric layer B is 1060 nm; the thickness of the dielectric layer T is 775 and nm; the thickness of the dielectric layer C is 136 and nm; the thickness of the dielectric layer D is 183 nm; the thickness of the dielectric layer M is 136 a nm a.
The composite film material can induce microstructure change under the action of physical fields such as ultraviolet light, heat, electric field and the like, and change the dielectric constant and refractive index of the composite film material so as to influence the conduction characteristic of infrared light waves in a dielectric layer. The composite film material of the embodiment is regulated and controlled by ultraviolet rays, heat and an electric field respectively, and the regulation and control modes are shown in fig. 2, 3 and 4.
As shown in FIG. 2, WO can be caused by irradiating ultraviolet rays to the composite film material and adjusting the intensity and incidence angle of the ultraviolet light source 3 The crystal phase structure of the dielectric layer where the material is located changes, thereby leading to WO 3 The change of the dielectric constant and the refractive index of the dielectric layer affects the conduction characteristic of infrared light in the composite film material, thereby realizing the dynamic regulation and control of infrared emissivity and laser reflectivity.
As shown in FIG. 3, an electromagnetic heating platform is additionally arranged on the bottom surface of the substrate of the composite film material, and the induction heating temperature is regulated and controlled by regulating and controlling the current, so as to induce polysilicon and WO 3 The two materials undergo thermal phase changes, resulting in subtle changes in refractive index. The refractive index of the polycrystalline silicon photo-thermal material can show a linear increase rule along with the increase of temperature; WO (WO) 3 Changes from amorphous to crystalline structure after high temperature heat treatment, which is also WO 3 The cause of the thermochromic phenomenon occurs with the change of heat. Thus, varying the polysilicon and WO can be achieved by heating control 3 The dielectric layer has the conduction characteristics to the infrared window wave band and the laser.
As shown in FIG. 4, a layer of ZrO is further added on the transparent conductive ITO glass substrate for preparing the composite film material 2 And the solid electrolyte membrane layer is then added with a layer of transparent conductive ITO glass counter electrode, so that a set of electrorheological emissivity devices is formed. The electrolyte layer plays a role in ion conduction, so that electron conduction between the transparent ITO electrodes on two sides is achieved, and a charge balance effect is achieved. WO can be induced by regulating and controlling the voltage of the electric field between the transparent conductive ITO electrodes at two sides 3 The network structure of the film material is injected or extracted with cations or electrons to reversibly change the valence state of tungsten atoms, so that the energy level of the material is changed to influence WO 3 The infrared emissivity and the laser reflectivity of the dielectric layer.
Analog calculation film series structure [ AB] 2 T[AB] 2 [CD]M[CD]The reflection spectrum characteristics in the infrared band (750-15000 nm interval) are shown in fig. 5, the reflectivity of the near infrared band (0.75-2.5 mu m) is shown in fig. 6 after the local detail enlargement, and the reflectivity of the near laser frequency domain (10-12 mu m) of 10.6 mu m is shown in fig. 7 after the local detail enlargement. In the initial state without the influence of external physical fields such as ultraviolet light, heat and electricity, the composite film material of the embodiment forms a wide-frequency-domain high-reflection phenomenon between the middle infrared 3-5 mu m and the far infrared 8-14 mu m, realizes infrared low reflectivity and middle and far infrared stealth effect. Meanwhile, the phenomenon of narrow-band low-reflection light trapping is realized in the double-laser frequency domain of 1.06 mu m and 10.6 mu m, and the compatible stealth effect of double-frequency-domain laser and middle and far infrared is realized. In addition, the range of 4 regions of the near infrared 1-2.5 μm wave Duan Shang is near infraredThe high reflection state (i.e. low emissivity) and therefore also a certain near infrared stealth effect.
Under the thermal field regulation action of FIG. 3, when the temperature is controlled at 100 ℃, the increase amplitude of the refractive index of the polysilicon under the temperature modulation action is about 0.05, and the increase amplitude of the refractive index of the tungsten oxide under the temperature modulation action is about 0.03. As shown in fig. 5, 6 and 7, under the external thermal field regulation and control effect, the reflectivity of the ultra-narrow notch band at the laser frequency domain of 1.06 mu m is increased from 10% to 50%, and the reflectivity modulation amplitude reaches 40%. However, the reflectivity of the ultra-narrow notch band at the 10.6 μm laser frequency domain is reduced from 45% to 25%, and the reflectivity modulation amplitude reaches 20%.
Under the electric field regulation and control action of fig. 4 and under the voltage of 1.2V, the refractive index variable modulation amplitude of the tungsten oxide is about 0.15, and as shown in fig. 5, 6 and 7, under the external electric field regulation and control action, the reflectivity of the ultra-narrow notch band at the laser frequency domain of 1.06 mu m is improved from 10% to 55%, and the reflectivity modulation amplitude of the ultra-narrow notch band reaches 45%. However, the reflectivity of the ultra-narrow notch band at the laser frequency domain of 10.6 μm is reduced from 45% to 35%, and the reflectivity modulation amplitude reaches 10%. Therefore, the composite film material of the embodiment can realize the intelligent camouflage function compatible with multi-frequency laser and multi-band infrared under the driving action of a plurality of physical fields such as heat, electricity and the like.
The composite film material of the embodiment forms corresponding defect energy levels near 1.06 mu m and 10.6 mu m to form photon local effect, and realizes 'hole digging' (forming a low-reflectivity band with a narrower frequency domain at a laser frequency domain of 1.06 mu m and 10.6 mu m) in a high-reflectivity spectrum wide forbidden band of a near infrared band of 1-2.5 mu m and a far infrared band of 8-14 mu m, thereby realizing compatible stealth effect of a double-frequency domain laser frequency domain and near-middle-far multiband infrared. The sensitivity of the transition metal oxide and the polysilicon to the physical field stimulus action of external light, heat, electricity and the like is utilized to induce the change of physical properties, the dielectric constant and the refractive index of a dielectric layer where the corresponding material is positioned are regulated and controlled, the conduction characteristic of infrared light inside the composite film material is changed, and the infrared emissivity and the laser reflectivity of the composite film material are regulated and controlled, so that the intelligent stealth effect is achieved.
Example 2 Intelligent stealth composite film Material compatible with Dual frequency Domain laser and Multiband Infrared
The heterogeneous membrane system structure is [ CD ]]M[CD][AB] k T[AB] k K=1, as shown in fig. 8, can be prepared by magnetron sputtering techniques on an electrically conductive tin antimony oxide (ATO) substrate. Wherein the material of the dielectric layer D is Al 2 O 3 ，Al 2 O 3 The refractive index at 1.06 μm is 1.75. The material of the dielectric layer a is tellurium (Te), which has a refractive index of 4.79 at 10.6 μm. The material of the dielectric layer C and the material of the dielectric layer M are TiO 2 TiO at room temperature (25 ℃) and without electric field 2 The refractive index at 1.06 μm is 2.48. The material of the medium layer B is silver chloride (AgCl) photosensitive material (doped with a small amount of copper oxide catalyst), and the refractive index of AgCl at 10.6 mu m is 1.98 under the indoor normal temperature (25 ℃) and no electric field effect. The material of the dielectric layer T is V 2 O 5 V at room temperature (25 ℃) and without electric field 2 O 5 The refractive index at 10.6 μm is 1.52.
The refractive indexes of the dielectric layer A, the dielectric layer B, the dielectric layer C, the dielectric layer D, the dielectric layer T and the dielectric layer M are respectively n A 、n B 、n C 、n D 、n T 、n M The thicknesses of the dielectric layer A, the dielectric layer B, the dielectric layer C, the dielectric layer D, the dielectric layer T and the dielectric layer M are respectively D A 、d B 、d C 、d D 、d T 、d M The following relationship is provided: n is n A× d A ≈n B× d B ≈n T× d T 26. 2650 nm, and n c× d c ≈n D× d D ≈n M× d M And 265 and nm. Specifically, the thickness of each dielectric layer is: the thickness of the dielectric layer A is 553 nm; the thickness of the dielectric layer B is 1338 and nm; the thickness of the dielectric layer T is 1743 nm; the thickness of the dielectric layer C is 107 nm; the thickness of the dielectric layer D is 151 nm; the thickness of the dielectric layer M was 107 a nm a.
The composite film material can be subjected to ultraviolet light and heatUnder the action of physical fields such as an electric field, the microstructure change is induced, the dielectric constant and the refractive index of the microstructure change, and the conduction characteristic of infrared light waves in the dielectric layer is further affected. The composite film material of the embodiment is regulated and controlled by ultraviolet rays, heat and an electric field respectively, and the regulation and control modes are shown in fig. 2, 3 and 4. The sensitivity of the material such as transition metal oxide or halide salt to the physical change is induced by the external physical field stimulus such as ultraviolet light, heat, electricity. TiO (titanium dioxide) 2 、V 2 O 5 Mechanism of action between the transition metal oxide and physical fields such as light, heat, electricity and the like and WO 3 Similarly, agCl can be decomposed under the action of ultraviolet rays, and can be reversibly recovered under the action of a copper oxide catalyst, namely the principle of the color-changing glasses in the current market.
Analog calculation of film System Structure [ CD ]]M[CD][AB] 1 T[AB] 1 The reflectance spectrum characteristics in the infrared band (interval 750-15000 nm) are shown in fig. 9, while the reflectance in the near infrared band (0.75-2.5 μm) is shown in fig. 10 after being enlarged in detail. The composite film material of the embodiment forms a wide-area high-reflection phenomenon in the middle infrared 3-5 mu m under the initial state of being not influenced by external physical fields such as ultraviolet light, heat, electricity and the like, has very low emissivity and has very good middle infrared stealth effect. In a far infrared 8-14 mu m wave band interval, a remarkable low reflection light trapping phenomenon of spectrum hole digging is formed near a 10.6 mu m laser frequency domain, the reflectivity of the light trapping phenomenon is only about 15%, and the light trapping device has a very good 10.6 mu m laser stealth effect. Meanwhile, the width of the notch of the light trapping band in the laser frequency domain of 10.6 mu m is relatively large, so that certain influence is caused on far infrared stealth, but the reflectivity of two far infrared wave bands of 8-10 mu m and 12-14 mu m can be higher than 60%, and therefore the device has a good 10.6 mu m and far infrared compatible stealth effect. In the band interval of near infrared 1-2.5 mu m, the reflection phenomenon is low at the position of 1.06 mu m, and the reflectivity is 5%, so that the laser has better influence effect on the laser frequency domain of 1.06 mu m. Meanwhile, the reflectivity of the near infrared band 1.1-1.4 mu m and the area of 1.6-1.7 mu m is higher than 60 percent, and the reflectivity of the area of 1.8-2.5 mu m is as high as 90 percent, so that the near infrared laser has near infrared and 1.06 mu m laser frequency domainsIs compatible with stealth effects.
When the composite film material is subjected to the external ultraviolet regulation and control action shown in figure 2, the radiation intensity is 55W/m 2 When TiO 2 The modulation amplitude of the refractive index change is 0.03, the modulation amplitude of the AgCl refractive index change is about 0.06, as shown in fig. 8 and 9, the reflectivity at the laser frequency domain of 1.06 mu m is improved from 10% to 30%, and the reflectivity modulation amplitude reaches 20%; the reflectivity at the laser frequency domain of 10.6 mu m is increased from 5% to 15%, and the reflectivity modulation amplitude reaches 10%. Meanwhile, the red shift phenomenon is generated in the center wavelength (namely the wavelength position of the lowest reflectivity) of a low-reflection narrow band near 1.06 mu m and a 'notch band' of a low-reflection broadband near 10.6 mu m.
When the voltage of the composite film material is 0.6V under the electric field regulation and control effect shown in FIG. 4, V 2 O 5 The modulation amplitude of the refractive index change is 0.1, tiO 2 The modulation amplitude of the refractive index change is 0.05, as shown in fig. 8 and 9, the reflectivity at the laser frequency domain of 1.06 mu m is improved from 10% to 90%, and the reflectivity modulation amplitude reaches 80%; the reflectivity at the laser frequency domain of 10.6 mu m is increased from 5% to 25%, and the reflectivity modulation amplitude reaches 20%. Meanwhile, the red shift phenomenon is generated in the center wavelength (namely the wavelength position of the lowest reflectivity) of a low-reflection narrow band near 1.06 mu m and a 'notch band' of a low-reflection broadband near 10.6 mu m. Therefore, the composite film material of the embodiment can realize the intelligent camouflage function compatible with multi-frequency laser and multi-band infrared under the drive action of multiple fields such as light, electricity and the like.
The composite film material of the embodiment forms corresponding defect energy levels near 1.06 mu m and 10.6 mu m to form photon local effect, and realizes 'hole digging' (forming a low-reflectivity band with a narrower frequency domain at a laser frequency domain of 1.06 mu m and 10.6 mu m) in a high-reflectivity spectrum wide forbidden band of a near infrared band of 1-2.5 mu m and a far infrared band of 8-14 mu m, thereby realizing compatible stealth effect of a double-frequency domain laser frequency domain and near-middle-far multiband infrared. By using transition metal oxide TiO 2 And V is equal to 2 O 5 The halide salt AgCl induces physical properties by stimulating the physical fields such as external light, heat and electricityThe changed sensitivity can regulate and control the dielectric constant and refractive index of the dielectric layer where the corresponding material is positioned, change the conduction characteristic of infrared light inside the composite film material, further regulate and control and change the infrared emissivity and laser reflectivity characteristic of the composite film material, and achieve the intelligent stealth effect.
The foregoing examples are provided to fully disclose and describe how to make and use the claimed embodiments by those skilled in the art, and are not intended to limit the scope of the disclosure herein. Modifications that are obvious to a person skilled in the art will be within the scope of the appended claims.

Claims (8)

1. The intelligent stealth composite film material compatible with double-frequency-domain laser and multiband infrared is characterized by comprising the following basic structure: [ AB] k T[AB] k [CD]M[CD]Or [ CD ]]M[CD][AB] k T[AB] k The film layer arrangement coefficient k represents the number of periodical alternate arrangement, and takes a value of 1 or 2;
the materials of the dielectric layers T and M are independently selected from transition metal oxides or polysilicon;
at least one of the dielectric layers A, B, C and D is made of a material selected from halide, transition metal oxide or polysilicon, and the other layers are independently selected from ZnS, znSe, pbTe, al 2 O 3 、Te、Ge、SiO 2 、TiO 2 Or Si (or) 3 N 4 ；
The refractive indexes of the dielectric layer A, the dielectric layer B, the dielectric layer C, the dielectric layer D, the dielectric layer T and the dielectric layer M are respectively n A 、n B 、n C 、n D 、n T 、n M The thicknesses of the dielectric layer A, the dielectric layer B, the dielectric layer C, the dielectric layer D, the dielectric layer T and the dielectric layer M are respectively D A 、d B 、d C 、d D 、d T 、d M The following relationship is provided: n is n A× d A ≈n B× d B ≈n T× d T 26. 2650 nm, and n c× d c ≈n D× d D ≈n M× d M ≈265 nm。
2. The intelligent stealth composite film material compatible with dual-frequency domain lasers and multiband infrared according to claim 1, wherein: the transition metal oxide is selected from TiO 2 、V 2 O 5 、MoO 3 、WO 3 。
3. The intelligent stealth composite film material compatible with dual-frequency domain lasers and multiband infrared according to claim 1, wherein: the halide salt is selected from silver chloride and copper chloride.
4. The intelligent stealth composite film material compatible with dual-frequency domain lasers and multiband infrared according to claim 1, wherein: the structure is [ AB] k T[AB] k [CD]M[CD]K=2, and the materials of the dielectric layer B and the dielectric layer D are SiO 2 ，SiO 2 Refractive indexes at two positions of 1.06 mu m and 10.6 mu m are respectively 1.45 and 2.5; the medium layer A and the medium layer T are made of polysilicon, and the refractive index of the polysilicon at the position of 10.6 mu m is 3.42 under the indoor normal temperature and no electric field effect; the material of the dielectric layer C and the material of the dielectric layer M are WO 3 WO (WO) is applied at room temperature without electric field 3 A refractive index at 1.06 μm of 1.95;
the thickness of the dielectric layer A is 775 and nm; the thickness of the dielectric layer B is 1060 nm; the thickness of the dielectric layer T is 775 and nm; the thickness of the dielectric layer C is 136 and nm; the thickness of the dielectric layer D is 183 nm; the thickness of the dielectric layer M is 136 a nm a.
5. The intelligent stealth composite film material compatible with dual-frequency domain lasers and multiband infrared according to claim 1, wherein: the structure is [ CD]M[CD][AB] k T[AB] k K=1, the material of the dielectric layer D is Al 2 O 3 ，Al 2 O 3 A refractive index at 1.06 μm of 1.75; the material of the dielectric layer A is Te, and the refractive index of the dielectric layer A at 10.6 mu m is 4.79; the material of the dielectric layer C and the material of the dielectric layer M are TiO 2 TiO at room temperature and without electric field 2 A refractive index at 1.06 μm of 2.48; medium (C)The material of the mass layer B is AgCl, and the refractive index of the AgCl at the position of 10.6 mu m is 1.98 under the indoor normal temperature and no electric field acts; the material of the dielectric layer T is V 2 O 5 V at room temperature and without electric field 2 O 5 A refractive index at 10.6 μm of 1.52;
the thickness of the dielectric layer A is 553 nm; the thickness of the dielectric layer B is 1338 and nm; the thickness of the dielectric layer T is 1743 nm; the thickness of the dielectric layer C is 107 nm; the thickness of the dielectric layer D is 151 nm; the thickness of the dielectric layer M was 107 a nm a.
6. Use of the dual-frequency domain laser and multiband infrared compatible intelligent stealth composite film material of any one of claims 1-5 as or in the preparation of an infrared and laser compatible stealth material.
7. The use according to claim 6, characterized in that: in specific application, the medium layers are coated layer by layer on the surface of the substrate by adopting atomic layer deposition, magnetron sputtering and/or evaporation plating.
8. The use according to claim 7, characterized in that: the substrate is selected from ITO, ATO or ITO-PET.
CN202210549211.5A 2022-05-20 2022-05-20 Intelligent stealth composite film material compatible with dual-frequency-domain laser and multiband infrared Active CN115061230B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210549211.5A CN115061230B (en) 2022-05-20 2022-05-20 Intelligent stealth composite film material compatible with dual-frequency-domain laser and multiband infrared

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210549211.5A CN115061230B (en) 2022-05-20 2022-05-20 Intelligent stealth composite film material compatible with dual-frequency-domain laser and multiband infrared

Publications (2)

Publication Number Publication Date
CN115061230A CN115061230A (en) 2022-09-16
CN115061230B true CN115061230B (en) 2023-08-11

Family

ID=83198361

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210549211.5A Active CN115061230B (en) 2022-05-20 2022-05-20 Intelligent stealth composite film material compatible with dual-frequency-domain laser and multiband infrared

Country Status (1)

Country Link
CN (1) CN115061230B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018131805A1 (en) * 2017-01-11 2018-07-19 연세대학교 산학협력단 Infrared stealth element using dual band completely absorptive metamaterial
CN111596387A (en) * 2020-06-02 2020-08-28 中国人民解放军火箭军工程大学 Multiband compatible intelligent optical camouflage material based on gas-liquid control
CN112346163A (en) * 2020-10-20 2021-02-09 中国人民解放军国防科技大学 Plasma and photonic crystal composite stealth structure
CN112363263A (en) * 2020-10-20 2021-02-12 中国人民解放军国防科技大学 Metal-dielectric type laser infrared multiband compatible stealth film and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018131805A1 (en) * 2017-01-11 2018-07-19 연세대학교 산학협력단 Infrared stealth element using dual band completely absorptive metamaterial
CN111596387A (en) * 2020-06-02 2020-08-28 中国人民解放军火箭军工程大学 Multiband compatible intelligent optical camouflage material based on gas-liquid control
CN112346163A (en) * 2020-10-20 2021-02-09 中国人民解放军国防科技大学 Plasma and photonic crystal composite stealth structure
CN112363263A (en) * 2020-10-20 2021-02-12 中国人民解放军国防科技大学 Metal-dielectric type laser infrared multiband compatible stealth film and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
一维光子晶体兼容隐身材料研究进展;林伟丽;邱桂花;于名讯;牛玉超;张瑞蓉;韩建龙;张煜曼;;兵器材料科学与工程(第06期);全文 *

Also Published As

Publication number Publication date
CN115061230A (en) 2022-09-16

Similar Documents

Publication Publication Date Title
US20230176439A1 (en) Electrochromic devices and methods
Buch et al. Review on electrochromic property for WO3 thin films using different deposition techniques
CN108803183B (en) Double-layer all-inorganic electrochromic device and preparation method thereof
JPH08505242A (en) Electrochromic device
JP2007108750A (en) Electrochromic element having improved ion conductor layer
KR20170024830A (en) Thermal insulating smart window coating
CN115061225B (en) Visible light, multi-frequency laser and middle-far infrared compatible stealth composite film material
CN111562685B (en) Intelligent infrared light switch for infrared window material and manufacturing method
Goldner et al. A monolithic thin-film electrochromic window
CN113376870A (en) Space light type electro-optical modulation device based on phase change material and manufacturing method thereof
US20210255518A1 (en) Multi-layer optical materials systems and methods of making the same
CN115291452A (en) Novel electrochromic structure with adjustable infrared radiation characteristic
CN115061230B (en) Intelligent stealth composite film material compatible with dual-frequency-domain laser and multiband infrared
Goldner et al. Completely solid lithiated smart windows
US20040021927A1 (en) Electrochromic devices
CN115061229B (en) Laser and middle-far infrared compatible stealth membrane system structure
CN115291310A (en) Laser and infrared compatible stealth film using local state heterojunction structure
CN115453673A (en) Laser and infrared compatible stealth film system structure utilizing F-P interference effect
KR102657182B1 (en) Selectively light transmitting window
Seward et al. Prototype all-solid lithiated smart window devices
Su et al. Electrochromic coloration of single-layer ITO: Nb oxides thin film
US20230367167A1 (en) Multicolor electrochromic structure, fabrication method and application thereof
Baloukas et al. Thermochromic VO2 coatings for energy control
Hutchins et al. Electrochromic tungsten oxide films for variable infrared reflectance devices
CN116088077A (en) Dual-wave dynamic heat camouflage structure and optimization method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant