CN110273126A - A kind of magnetron sputtering coating method of wide-angle low drifting optical filter - Google Patents
A kind of magnetron sputtering coating method of wide-angle low drifting optical filter Download PDFInfo
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- CN110273126A CN110273126A CN201910528274.0A CN201910528274A CN110273126A CN 110273126 A CN110273126 A CN 110273126A CN 201910528274 A CN201910528274 A CN 201910528274A CN 110273126 A CN110273126 A CN 110273126A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/046—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material with at least one amorphous inorganic material layer, e.g. DLC, a-C:H, a-C:Me, the layer being doped or not
Abstract
The present invention provides that a kind of deviation range is small, accuracy of identification is high, production energy consumption is low, the magnetron sputtering coating method of the wide-angle low drifting optical filter of high production efficiency, the present invention uses drum-type two-chamber sputter coating machine, inner cavity is sputtering chamber, exocoel is handling chamber, under atmospheric pressure, substrate is packed on the plated film machine cylinder of handling chamber, plated film faces outwardly；Pumping, when the vacuum of sputtering chamber and handling chamber reaches 9.0*10‑3Pa~8.0*10‑3When Pa, substrate enters sputtering chamber with plated film machine cylinder；When sputtering chamber vacuum reaches 8.0*10‑5Pa~2.0*10‑5When Pa, sputtering source is opened, argon gas is passed through, opens simultaneously ion source, be passed through hydrogen, nitrogen, forms N doping hydrogenated amorphous silicon layer (α-Si:H) N on substrate2；Sputtering source is opened, argon gas is passed through, opens simultaneously ion source, be passed through oxygen, form silicon oxide layer on substrate；It successively reacts, forms the alternate laminated structure of N doping amorphous silicon hydride and silica；Finally on evaporation coating machine, in workpiece reverse side, the long wave for plating respective wavelength is logical.
Description
Technical field
The invention belongs to field of optical filter, and in particular to a kind of magnetron sputtering plating of wide-angle low drifting optical filter
Method.
Background technique
Optical system commonly using optical filter come isolated under background signal (noise) leniently the wave band comprising signal with
Promote signal-to-noise ratio.These optical filters have infinite more characteristic, this depends on the optical system using them.With 700nm~
The appearance of the great power LED and laser of near-infrared (NIR) wavelength between 1100nm, in the application of business and consumer field
More and more attention has been paid to.These near-infrared LEDs and laser are becoming low cost and compact light source (signal).In order to make it
Signal-to-noise ratio in system maximizes, the near-infrared bandpass filter for needing to have low angle drift effect using a matching.
The near-infrared bandpass filter of different spectrum is produced using principle of optical interference.The basic principle of the interference of light is benefit
Use up the phase change generated when passing through film.This phase transformation can be regarded as the light path between two interfaces of perfect optics film
Difference.This optical path difference changes with the change of incident angle entirely.Angle between two interfaces abides by Snell's law
(Snell's Law):
n1Sin(θ1)=n2Sin(θ2)
This causes many interesting phenomenons.One of them is that the refractive index of angle of propagation and material is inversely proportional.Angle of propagation determines
The phase transformation that light passes through film layer.Phase transformation determines that spectrum property changes.Therefore, high as one as a result, for optical filter
Refractive index corresponds to low angular effect.
Unfortunately, the refractive index of usual near infrared band material, maximum only 2.3 or so.In this way, with low-refraction material
Expect (such as SIO2, refractive index 1.46) cooperation, the near-infrared filter disc made, when incidence angle is 30 degree, angle drift is usual
Reach 30-40nm, waveform is badly deformed, and its film structure generally reaches seven, 80 layers to layers up to a hundred, and overall thickness is nearly
10um。
In consideration of it, having to find out one kind near infrared band, refractive index can be significantly promoted, and reduce this wave band
Extinction coefficient.
Semiconductor material usually has 4.3 or more refractive index in this wave band, is the master for making low angle effect refractive index
Material selection.Such as the refractive index 4.3 of Si, the refractive index 4.8 of Ge.But its extinction coefficient is very big.In near infrared band, substantially
In non-transparent state.
If suitable material can be found, mix in semiconductor material, saturation the defects of dangling bonds in semiconductor is fallen, I
Be possible to slightly to sacrifice refractive index, drop to 3.3~3.8, extinction coefficient be greatly lowered, drop to 1*10-4, to realize system
Make the optical filter of wide-angle low drifting.
Conventional optical filter production currently on the market have been realized in optical filter distance sensor system, three-dimensional (3D) at
As being used in the sensing systems such as system or gesture recognition system, but its shortcoming is that unprotect, easily poisoning, life in production process
Produce it is unstable, and it is high, production efficiency is lower with energy consumption the problems such as.
In conclusion therefore proposing the present invention.
Summary of the invention
For background technique propose the shortcomings of the prior art, the present invention provide a kind of deviation range it is small, identification essence
The magnetron sputtering coating method of degree height, low, high production efficiency the wide-angle low drifting optical filter of production energy consumption.
The present invention is achieved by the following technical solutions:
A kind of magnetron sputtering coating method of wide-angle low drifting optical filter, comprising the following steps:
Step 1, using drum-type two-chamber sputter coating machine, inner cavity is sputtering chamber, and exocoel is to load and unload chamber, will under atmospheric pressure
Substrate is packed on the plated film machine cylinder of handling chamber, and plated film faces outwardly；
Step 2, pumping, when the vacuum of sputtering chamber and handling chamber reaches 9.0*10-3Pa~8.0*10-3When Pa, substrate with
Plated film machine cylinder enters sputtering chamber；
Step 3, when sputtering chamber vacuum reaches 8.0*10-5Pa~2.0*10-5When Pa, sputtering source is opened, is passed through argon gas, together
When open ion source, be passed through hydrogen, nitrogen, on substrate formed N doping hydrogenated amorphous silicon layer (α-Si:H) N2；
Step 4 opens sputtering source, is passed through argon gas, opens simultaneously ion source, be passed through oxygen, form silica on substrate
Layer；
Step 5 repeats step 3 and step 4, forms the alternate laminated structure of N doping amorphous silicon hydride and silica；
Step 6, on evaporation coating machine, in workpiece reverse side, the long wave for plating respective wavelength is logical.
The step 3 aoxidizes source power 8000W, is filled with argon gas 100sccm, hydrogen, nitrogen are same according to chemical fixed mixing ratio
When be filled with.
The step 4 aoxidizes source power 2500W, is filled with argon gas 150sccm, is filled with oxygen 70sccm.
The sputtering chamber is equipped with two pairs, totally four pieces twin Si targets, and target uses simultaneously.
The sputtering source two sides are separately installed with molecular pump.
Compared with prior art, the beneficial effects of the present invention are:
1, the present invention uses N doping amorphous silicon hydride (α-Si:H) N2With the alternating structure of silica, nitrogen plays one
The effect of buffering, hydrogen and silicon directly react unstable, and nitrogen is needed therefrom to reconcile, and the process constructed again are played, by hydrogen
SiClx is changed into amorphous silicon hydride, and amorphous silicon hydride is stablized than silane, then it is high just to determine that it makes yield, and hydrogenates non-
The refractive index of crystal silicon is bigger than silane, is easy to reach Requirement of Spectrum, material loss phase with less thickness above in spectrum design
To also smaller；
2, the present invention uses sputtering technology, and the spectrum plated out is in the region pair ultraviolet (< 400nm) visible light (400-760nm)
The cut-off of light can achieve the OD depth of OD5 (T=0.001%) and the above rank, not have the interference of any light；For same
The offset that 0 degree and 30 degree of light source can control lesser range (minimum can achieve 11nm), greatly improve this product each
The precision identified in the use of industry camera lens；
3, for the present invention for energy consumption, common evaporator usually has DP pump, and DP pump needs 24 hours continuous heatings, damage
Consumption is very big, and sputter is then that molecular pump does not need continuous heating, in addition, using because design thickness being greatly reduced
Medicinal material also can accordingly reduce half or so, substantially reduce production cost, high financial profit；
4, the present invention is for production efficiency: common evaporator does this spectrum and needs at least 70 layers or more, and sputtering technology
It only needs to be no more than 30 layers or so, for the design thickness of common evaporator in 8000nm or more, sputtering technology only needs 4000nm left
The right side, the time shortens nearly half, and due to the cause of two cavitys, plated film cavity is plated to full journey holding high vacuum from opening
State, then one furnace of every plating requires exhaust of deflating again to common evaporator.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the drum-type two-chamber sputter coating machine that the present invention uses；
Fig. 2 is 940 spectra figures；
Fig. 3 is 850 spectra figures.
In attached drawing: 1. sputtering chambers；2. loading and unloading chamber；3. shielding power supply；4. twin Si target；5. roller；6. hydrogen；7. oxygen；
8. nitrogen；9. argon gas.
Specific embodiment
Combined with specific embodiments below and attached drawing further illustrates technical solution of the present invention, which should not limit this
The technical protection scope of invention.Related model equipment mentioned below, is not related to specific manufacturer, the instrument that can directly buy for market
Device equipment.
Embodiment 1:
Step 1, referring to Fig.1, using drum-type two-chamber sputter coating machine, inner cavity is sputtering chamber 1, and exocoel is handling chamber 2,
Under atmospheric pressure, substrate is packed on the plated film machine cylinder 5 of handling chamber 1, plated film faces outwardly；
Step 2, pumping, when the vacuum of sputtering chamber 1 and handling chamber 2 reaches 9.0*10-3When Pa, substrate is with plated film machine cylinder 5
Into sputtering chamber 1；
Step 3, when 1 vacuum of sputtering chamber reaches 8.0*10-5When Pa, sputtering source 3 is opened, is passed through argon gas 9, sputtering chamber 1 is installed
There are two pairs, totally four pieces twin Si targets 4, target uses simultaneously, meanwhile, ion source 2 is opened, hydrogen 6, nitrogen 8 are passed through, on substrate
Form N doping hydrogenated amorphous silicon layer (α-Si:H) N2, source power 8000W is aoxidized, argon gas 9100sccm, hydrogen 6, nitrogen 8 are filled with
It is filled with simultaneously according to chemical fixed mixing ratio；
Step 4 opens sputtering source 3, is passed through argon gas 9, opens simultaneously ion source 2, be passed through oxygen 7, form oxygen on substrate
SiClx layer aoxidizes source power 2500W, is filled with argon gas 9150sccm, is filled with oxygen 770sccm；
Step 5 repeats step 3 and step 4, forms the alternate laminated structure of N doping amorphous silicon hydride and silica；
Step 6,940 series --- the curve of spectrum penetrate T=50%, corresponding wavelength (T1+T2)/2=940nm, referred to as
In step 6, it is logical that 880 long waves are plated to it for 940 series -- the curve of spectrum penetrates T=50%, corresponding wavelength in 880nm or so,
Referred to as 880 long waves are logical.
As shown in Fig. 2, 940 serial measured spectra data are as follows:
Embodiment 2:
Step 1, referring to Fig.1, using drum-type two-chamber sputter coating machine, inner cavity is sputtering chamber 1, and exocoel is handling chamber 2,
Under atmospheric pressure, substrate is packed on the plated film machine cylinder 5 of handling chamber 1, plated film faces outwardly；
Step 2, pumping, when the vacuum of sputtering chamber 1 and handling chamber 2 reaches 8.0*10-3When Pa, substrate is with plated film machine cylinder 5
Into sputtering chamber 1；
Step 3, when 1 vacuum of sputtering chamber reaches 5.0*10-5When Pa, sputtering source 3 is opened, is passed through argon gas 9, sputtering chamber 1 is installed
There are two pairs, totally four pieces twin Si targets 4, target uses simultaneously, meanwhile, ion source 2 is opened, hydrogen 6, nitrogen 8 are passed through, on substrate
Form N doping hydrogenated amorphous silicon layer (α-Si:H) N2, source power 8000W is aoxidized, argon gas 9100sccm, hydrogen 6, nitrogen 8 are filled with
It is filled with simultaneously according to chemical fixed mixing ratio；
Step 4 opens sputtering source 3, is passed through argon gas 9, opens simultaneously ion source 2, be passed through oxygen 7, form oxygen on substrate
SiClx layer aoxidizes source power 2500W, is filled with argon gas 9150sccm, is filled with oxygen 770sccm；
Step 5 repeats step 3 and step 4, forms the alternate laminated structure of N doping amorphous silicon hydride and silica；
Step 6,850 series -- the curve of spectrum penetrate T=50%, corresponding wavelength (T1+T2)/2=850nm, referred to as
850 is serial, and in step 6, it is logical that 780 long waves are plated to it --- and the curve of spectrum penetrates T=50%, and corresponding wavelength is on the left side 780nm
The right side, referred to as 780 long waves are logical.
As shown in figure 3,850 serial measured spectra data are as follows:
Above data is the measured data of embodiment 1 and embodiment 2, and in actual production, the product is for same light source 0
Degree and 30 degree of offset minimum can control in 11nm, improve the precision identified in the use of every profession and trade camera lens.
In addition, the present invention uses new technique, while unit time energy consumption declines, production efficiency is greatly improved, and has
Great economic value and the market competitiveness.
In conclusion only presently preferred embodiments of the present invention, is not used to limit the scope of implementation of the present invention, it is all according to
Equivalent changes and modifications carried out by shape described in scope of the invention as claimed, construction, feature and spirit should be included in this
In the scope of the claims of invention.
Claims (5)
1. a kind of magnetron sputtering coating method of wide-angle low drifting optical filter, it is characterised in that: the following steps are included:
Step 1, using drum-type two-chamber sputter coating machine, inner cavity is sputtering chamber (1), and exocoel is to load and unload chamber (2), under atmospheric pressure,
Substrate is packed on the plated film machine cylinder (5) of handling chamber (1), plated film faces outwardly；
Step 2, pumping, when sputtering chamber (1) and the vacuum for loading and unloading chamber (2) reach 9.0*10-3Pa~8.0*10-3When Pa, substrate with
Plated film machine cylinder (5) enters sputtering chamber (1)；
Step 3, when sputtering chamber (1), vacuum reaches 8.0*10-5Pa~2.0*10-5When Pa, opens sputtering source (3), be passed through argon gas
(9), ion source (2) are opened simultaneously, hydrogen (6), nitrogen (8) are passed through, form N doping hydrogenated amorphous silicon layer (α-on substrate
Si:H)N2；
Step 4 is opened sputtering source (3), is passed through argon gas (9), opens simultaneously ion source (2), be passed through oxygen (7), the shape on substrate
At silicon oxide layer；
Step 5 repeats step 3 and step 4, forms N doping amorphous silicon hydride (α-Si:H) N2With the alternative stacked of silica
Structure；
Step 6, on evaporation coating machine, in workpiece reverse side, the long wave for plating respective wavelength is logical.
2. a kind of magnetron sputtering coating method of wide-angle low drifting optical filter according to claim 1, it is characterised in that:
The step 3 aoxidizes source power 8000W, is filled with argon gas (9) 100sccm, hydrogen (6), nitrogen (8) are according to chemical fixed mixing ratio
It is filled with simultaneously.
3. a kind of magnetron sputtering coating method of wide-angle low drifting optical filter according to claim 1, it is characterised in that:
The step 4 aoxidizes source power 2500W, is filled with argon gas (9) 150sccm, is filled with oxygen (7) 70sccm.
4. a kind of magnetron sputtering coating method of wide-angle low drifting optical filter according to claim 1, it is characterised in that:
The sputtering chamber (1) is equipped with two pairs, totally four pieces twin Si targets (4), and target uses simultaneously.
5. a kind of magnetron sputtering coating method of wide-angle low drifting optical filter according to claim 1, it is characterised in that:
Sputtering source (4) two sides are separately installed with molecular pump.
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| CN201910528274.0A CN110273126A (en) | 2019-06-18 | 2019-06-18 | A kind of magnetron sputtering coating method of wide-angle low drifting optical filter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113109898A (en) * | 2021-04-07 | 2021-07-13 | 浙江水晶光电科技股份有限公司 | Preparation method of hydrogenated compound film and optical filter |
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| CN109655954A (en) * | 2019-03-05 | 2019-04-19 | 浙江水晶光电科技股份有限公司 | Optical filter and preparation method thereof, fingerprint recognition mould group and electronic equipment |
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| CN1329265A (en) * | 2000-06-20 | 2002-01-02 | 国际商业机器公司 | Multidomain for dry orientatino and inner switching liquid crystal display device |
| JP2008094063A (en) * | 2006-10-16 | 2008-04-24 | Asahi Kasei Chemicals Corp | Metal oxide laminate |
| CN105137518A (en) * | 2015-08-25 | 2015-12-09 | 浙江大学 | Color optical filter insensitive to incident angle and preparation method for the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113109898A (en) * | 2021-04-07 | 2021-07-13 | 浙江水晶光电科技股份有限公司 | Preparation method of hydrogenated compound film and optical filter |
| CN113109898B (en) * | 2021-04-07 | 2022-05-06 | 浙江水晶光电科技股份有限公司 | Preparation method of hydrogenated compound film and optical filter |
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