CN109023273A - A kind of filming equipment and film plating process - Google Patents
A kind of filming equipment and film plating process Download PDFInfo
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- CN109023273A CN109023273A CN201810884395.4A CN201810884395A CN109023273A CN 109023273 A CN109023273 A CN 109023273A CN 201810884395 A CN201810884395 A CN 201810884395A CN 109023273 A CN109023273 A CN 109023273A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Mechanical Engineering (AREA)
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- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of filming equipment and film plating process, wherein filming equipment includes vacuum chamber (1), the target pedestal (11) and substrate chuck (12) being arranged in the vacuum chamber (1), the target pedestal (11) are set to the top of the substrate chuck (12)；It further include electrode switching device (13)；The electrode switching device (13) and the target pedestal (11) are connected with each other, and the target pedestal (11) is even number.Pass through the electric polarity of checker sputtering target material, to realize the present invention in coating process, positively charged plasma is set to bombard the sputtering target material of electric polarity cathode in turn, long-time to avoid bombards the same sputtering target material and leads to sputtering target material " poisoning ", and then it avoids in coating process, the failure of sputtering target material, effectively increases the service life of sputtering target material, and further improves the plating membrane efficiency of filming equipment.
Description
Technical field
The present invention relates to a kind of filming equipment and film plating process more particularly to a kind of filming equipments and plating for optical filter
Film method.
Background technique
With the development of science and technology, in smart phone, mobile lidar, safe burglar-proof gate inhibition, smart home, virtual reality/increasing
Recognition of face is gradually embedded in the terminals utilizations such as strong reality/mixed reality, 3D somatic sensation television game, 3D camera shooting and display, gesture is known
The functions such as not.Correspondingly, can be played close in anti-reflection copper strips to realize that above-mentioned function then needs to use near-infrared narrow band filter
Infrared light ends the effect of visible light in environment.Usual near-infrared narrow band filter includes two membrane systems, respectively IR band logical
Membrane system and long wave lead to AR membrane system.Traditional coating materials and vacuum vapor plating mode are difficult to meet emerging market demand, therefore cause existing
There is the optical filter in technology poor to the antireflective effect of near infrared light and the effect of cut-off visible light, in a larger angle
Object reflection or transmitting light are deviated by the optical signal passband that infrared sensor sensitivity captures in range, lead to signal noise
Increase, and then causes identification abnormal, after filter set is attached to the devices such as recognition of face, gesture identification, imaging effect
Fruit is poor, accuracy of identification is not high, moreover, the production efficiency of near-infrared narrow band filter is low in traditional technology, it is difficult to meet increasingly
The market of growth needs.
Summary of the invention
The purpose of the present invention is to provide a kind of filming equipment and film plating process, solve that optical filter production efficiency is low to ask
Topic.
For achieving the above object, the present invention provides a kind of filming equipment, including vacuum chamber, is arranged in the vacuum chamber
In target pedestal and substrate chuck, the target pedestal be set to the top of the substrate chuck；It further include electrode switching dress
It sets；
The electrode switching device and the target pedestal are connected with each other, and the target pedestal is even number.
According to an aspect of the present invention, linear displacement apparatus is provided on the target pedestal；
Along the vertical direction, the linear displacement apparatus drives the target pedestal to move back and forth.
According to an aspect of the present invention, further includes: be set in the vacuum chamber adjacent with the target pedestal and use
In providing and enhance the radio-frequency signal generator of the target base position plasma motion speed, and setting and the vacuum chamber
The external and alternating magnetic field device opposite with the target pedestal.
According to an aspect of the present invention, further includes: the ion source on the vacuum chamber and air extractor are set, are used for
The air inlet pipe of gas is passed through into the vacuum chamber, for extracting the escape pipe of gas in the vacuum chamber；
The air inlet pipe include the first air inlet pipe for conveying inert gas and second for being passed through reaction gas into
Tracheae.
According to an aspect of the present invention, the air inlet pipe is oppositely arranged with the escape pipe.
According to an aspect of the present invention, the electrode switching device is ac electrode switching device.
For achieving the above object, the present invention provides a kind of film plating process, comprising:
S1., sputtering target material and substrate are installed respectively in a vacuum chamber, and the pressure in vacuum chamber is controlled in preset pressure
Value；
S2. be passed through inert gas to the vacuum chamber, and will be bombarded after the ionized inert gas sputtering target material and
The surface of the substrate is pre-processed；
S3. it is passed through reaction gas into the vacuum chamber, is coated with film layer on the substrate, wherein is handed over predetermined period
For the electric polarity for converting the sputtering target material.
According to an aspect of the present invention, the volume flow that the inert gas and the reaction gas are passed through is less than
120sccm。
According to an aspect of the present invention, the inert gas is argon gas, and the reaction gas is hydrogen or oxygen；
If the reaction gas is hydrogen, 0.2≤V of volume flow satisfaction of the argon gas and the hydrogenH2/VAr≤
0.5, wherein the VH2For the volume flow of hydrogen, the VArFor the volume flow of argon gas.
According to an aspect of the present invention, in step S3, when being coated with film layer on the substrate, sputtering reaction temperature is
80 DEG C~300 DEG C, sputter rate V meets: 0.1nm/s≤V≤1nm/s.
According to an aspect of the present invention, in step S3, the film layer includes that IR band logical film layer and AR long wave lead to film layer, institute
It states IR band logical film layer and the AR long wave leads to film layer and is coated on the opposite two sides of the substrate respectively；
The IR band logical film layer and the AR long wave lead to film layer and first refractive index material, the second refractive index material are respectively adopted
Two or three of alternating in material, third reflect rate material is coated with, wherein the refractive index of the first refractive index material is small
In 3, the refractive index of second refraction materials is greater than 3, and the refractive index of the third reflect rate material is less than 4.
According to an aspect of the present invention, the IR band logical film layer and the AR long wave lead to film layer and connect respectively with the substrate
One layer connect is coated with using the first refractive index material or the third reflect rate material；
The IR band logical film layer and the AR long wave lead to film layer and use described first for one layer close with incident medium respectively
Refraction materials or the third reflect rate material are coated with.
According to an aspect of the present invention, the first refractive index material is Nb2O5、Ta2O5、TiO2、SiO2、ZrO2、
Si2N、SiN、Si2N3、Si3N4One or more of mixture.
According to an aspect of the present invention, second refraction materials are silane.
The electric polarity of checker sputtering target material may be implemented in a kind of scheme according to the present invention, even number target, thus
Realize that the present invention in coating process, makes positively charged plasma bombard the sputtering target material of electric polarity cathode in turn, from
And the long-time avoided bombards the same sputtering target material and leads to sputtering target material " poisoning ", and then avoids in coating process,
The failure of sputtering target material effectively increases the service life of sputtering target material, so that equipment is carried out continuously plated film and produces, and into
One step improves the plating membrane efficiency of filming equipment.
A kind of scheme according to the present invention, by the atom sputtering on target to substrate surface, sputtering reaction temperature is 80
DEG C~300 DEG C, sputter rate is arranged in the range of 0.1nm/s≤V≤1nm/s, can preferably match substrate chuck place
The jittering characteristic of rotary system, to make the disk difference for the substrate being carried in substrate chuck be less than 6nm, to make atom on base
Attachment it is more uniform, and then make in substrate that the thickness of plated film is uniform, keep coating effects more preferable, coating performance is more excellent.
A kind of scheme according to the present invention is set as by the way that argon gas, hydrogen, oxygen are passed through the volume flow in vacuum chamber
Less than 120sccm, and when reaction gas is hydrogen, the volume flow of argon gas and hydrogen meets 0.2≤VH2/VAr≤ 0.5,
The product stress of plated film can be then effectively improved during being coated with film layer, to keep the film layer internal structure being coated with more steady
It is fixed, it improves caused by plating membrane stress bending that uniformity is poor, film layer fragmentation, collapses film, attaches the defects of glue rear demoulding, improves
Properties of product and yield further ensure the service life and using effect of film layer.
A kind of scheme according to the present invention, (bombards sputtering target material by using ion source after ionizing to inert gas
It ensure that in coating process, splash so that the impurity on sputtering target material and substrate surface be made to be efficiently removed with the surface of substrate
It shoots at the target the cleaning of material and substrate surface, thus to the quality for the film layer being coated in substrate is improved, while can also be improved base
Adhesive force of the bottom to film layer atom.
A kind of scheme according to the present invention, is formed on the substrate the film layer of more compact deposits, with better adhesive force, more
Strong hardness and adhesion strength；With higher deposition rate, smooth boundary layer and unformed layer structure are formed, because
This is with lower scattering or absorption loss water.The near-infrared narrow band filter made through the invention, can be in high transmittance
Under the premise of, narrow band filter passband center wavelengths can be greatly reduced with angle drift amount, improve narrow band filter transition region
Steepness, improve recognition of face, signal-to-noise ratio in gesture recognition system, reduce film layer overall thickness and plated film total time, reduce
Production cost has saved use cost for terminal client.
Detailed description of the invention
Fig. 1 schematically shows a kind of structure chart of the filming equipment of embodiment according to the present invention；
Fig. 2 schematically shows a kind of inert gas volume flow of embodiment according to the present invention and the pass of plating membrane stress
System's figure；
Fig. 3 schematically shows the structure chart for the near-infrared narrow band filter that a kind of embodiment according to the present invention is coated with；
Fig. 4 schematically shows the near-infrared narrow band filter transmitance and wave that a kind of embodiment according to the present invention is coated with
Long curve relation figure.
Specific embodiment
It, below will be to embodiment in order to illustrate more clearly of embodiment of the present invention or technical solution in the prior art
Needed in attached drawing be briefly described.It should be evident that the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skills without creative efforts, can also be according to these
Attached drawing obtains other attached drawings.
When being described for embodiments of the present invention, term " longitudinal direction ", " transverse direction ", "upper", "lower", " preceding ",
" rear ", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", orientation or positional relationship expressed by "outside" are based on phase
Orientation or positional relationship shown in the drawings is closed, is merely for convenience of description of the present invention and simplification of the description, rather than instruction or dark
Show that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore above-mentioned term cannot
It is interpreted as limitation of the present invention.
The present invention is described in detail with reference to the accompanying drawings and detailed description, embodiment cannot go to live in the household of one's in-laws on getting married one by one herein
It states, but therefore embodiments of the present invention are not defined in following implementation.
As shown in Figure 1, a kind of embodiment according to the present invention, a kind of filming equipment of the invention includes vacuum chamber 1, if
Set target pedestal 11, substrate chuck 12 and electrode switching device 13 in vacuum chamber 1.In the present embodiment, target pedestal
11 tops that substrate chuck 12 be set opposite with substrate chuck 12.In the present embodiment, target pedestal 11 is even number,
Electrode switching device 13 and target pedestal 11 are connected with each other.It is acted on, be can be convenient quick by the switching of electrode switching device 13
The different target pedestals 11 of realization on electric polarity cathode is presented.In the present embodiment, electrode switching device 13 is alternating current
Pole switching device.
A kind of embodiment according to the present invention is provided with linear displacement apparatus on target pedestal 11.In present embodiment
In, along the vertical direction (i.e. longitudinal in Fig. 1), linear displacement apparatus driving target pedestal 11 moves back and forth up and down.Pass through linear position
Moving device realizes the accurate adjustment of distance between target pedestal 11 and substrate chuck 12, to be conducive to the target in coating process
11 position of pedestal is adjusted flexibly.
As shown in Figure 1, a kind of embodiment according to the present invention, a kind of filming equipment of the invention further includes radio frequency
Device 14 (RF generator 14).In the present embodiment, the setting adjacent with target pedestal 11 of radio-frequency signal generator 14 is in target pedestal
11 side, during the work time, radio-frequency signal generator 14 are capable of providing and enhance the movement velocity of plasma, to enhance
The density of 11 position plasma of target pedestal improves substrate quality of forming film to further promote sputter rate.
As shown in Figure 1, a kind of embodiment according to the present invention, a kind of filming equipment of the invention further includes alternating magnetic field
Device 19.In the present embodiment, alternating magnetic field device 19 is located at 1 outside of vacuum chamber and is oppositely arranged with target pedestal 11.?
During the present invention carries out sputter coating to the substrate b in substrate chuck 12, the sputtering target material a on target pedestal 11 is yin
Pole, and the substrate in substrate chuck 12 is anode, therefore, target pedestal 11 and substrate chuck 12 have for plasma into
The direction of motion of the electric field that row accelerates, the plasma passed through by 19 Duis of alternating magnetic field device is changed, and makes plasma
It can bombard on sputtering target material a or substrate b.Electromagnetic field directing plasma, which is generated, by alternating magnetic field device 19 bombards target
Or substrate surface is pre-processed.And then in coating process, film quality can be improved by plasma.
As shown in Figure 1, a kind of embodiment according to the present invention, a kind of filming equipment of the invention further includes ion source
15, air extractor 16, air inlet pipe 17 and escape pipe 18.In the present embodiment, ion source 15 and air extractor 16 are fixedly mounted
It is connected on the side wall of vacuum chamber 1, and respectively with the inside of vacuum chamber 1.It can be to being passed through in vacuum chamber 1 by ion source 15
Inert gas ionized, make its generate have positive charge plasma.In the present embodiment, ion source 15 can be used
Radio-frequency ion source.In the present embodiment, air extractor 16 is used to control the gas pressure in vacuum chamber.In present embodiment
In, air extractor 16 can be vacuum pump.In the course of work of the present invention, air extractor 16 extracts the gas in vacuum chamber out,
To which the pressure controlled in vacuum chamber 1 is maintained at the pressure value of setting.In the present embodiment, along Fig. 1 laterally, radio frequency occurs
Device 14 between ion source 15 and target pedestal 11, thus ensure that radio-frequency signal generator 14 can to ion source 15 generate etc.
Gas ions are accelerated in time, keep its acceleration time elongated, and then are conducive to improve the bombardment effect to sputtering target material a.Meanwhile
By above-mentioned setting, the plasma that ion source 15 generates accelerates to be energetic plasma by radio-frequency signal generator, and is handing over
Under the action of alternating magnetic field of varying magnetic field device 19, under the electric field action between substrate b and sputtering target material a, target is bombarded, and then make
The direction for obtaining the plasma that alternating magnetic field device 19 can be controlled sufficiently after being accelerated by radio-frequency signal generator 14, further to plated film
It is beneficial that coating quality is improved in the process.
As shown in Figure 1, a kind of embodiment according to the present invention, air inlet pipe 17 include the first air inlet pipe 171 and second into
Tracheae 172.In the present embodiment, the first air inlet pipe 172 is connected with the inside of vacuum chamber 1, for conveying inert gas, the
Two air inlet pipe 172 are connected with the inside of vacuum chamber 1 for conveying reaction gas.Due to the reaction gas used in coating process
Body has a variety of (such as two kinds), then the second air inlet pipe 172 setting corresponding with the type of reaction gas, by by the second air inlet
The setting corresponding with reaction gas of pipe 172 avoids to ensure that each second air inlet pipe 172 conveys the unicity of gas
The mixing of reaction gas, advantageously ensures that coating quality and working efficiency.In the present embodiment, air inlet pipe 17 and escape pipe
18 are oppositely arranged, by setting opposite for air inlet pipe 17 and escape pipe 18, to ensure that into extra in vacuum chamber 1
Gas can be extracted out from escape pipe 18 in time.Pass through being oppositely arranged for air inlet pipe 17 and escape pipe 18, air inlet pipe 17 and outlet
Relative distance between pipe 18 is short, thus keep gas flow path during flowing into vacuum chamber 1 to outflow vacuum chamber 1 short,
It is influenced caused by plated film so as to avoid reaction gas in vacuum chamber flowing, further improves coating quality.In this implementation
In mode, air inlet pipe 17 is located at the side setting of target pedestal 11, and the side that same escape pipe 18 is located at substrate chuck 12 is set
It sets, therefore, further avoids influence when being coated with to the input of vacuum chamber 1 and gas bleeding to film layer, and then to guarantee plated film
Quality.
A kind of embodiment according to the present invention, a kind of film plating process of the invention include:
S1., sputtering target material a and substrate b are installed respectively in vacuum chamber 1, and by the pressure control in vacuum chamber 1 default
Pressure value.In the present embodiment, sputtering target material a is installed on the target pedestal 11 in vacuum chamber 1, in the present embodiment,
Silicon target or niobium target can be used in sputtering target material a, naturally it is also possible to be other materials, as the case may be depending on.In base pinch
Installation needs to be coated with the substrate b of film layer on tool 12.Control the linear displacement apparatus adjustment target pedestal 11 on target pedestal 11
Position.16 power supply of air extractor is connected, vacuum chamber 1 is evacuated by air extractor 16, reaches the pressure value in vacuum chamber 1
To preset pressure value, and it is out of service.
S2. inert gas, and the surface for sputtering target material a and substrate b being bombarded after ionized inert gas are passed through to vacuum chamber 1
It is pre-processed.In the present embodiment, it is connected by the first air inlet pipe 171 with inert gas source, and is led into vacuum chamber 1
Enter inert gas.In the present embodiment, the volume flow that inert gas is passed through is less than 120sccm.Ion source 15 is started to work,
The ionized inert gas of input is generated to positively charged plasma.In the present embodiment, it is mentioned by radio-frequency signal generator 14
For and enhance the concentration of the energetic plasma around target pedestal 11, and pass through the effect of alternating magnetic field device 19, by high energy
Plasma bombards the surface of sputtering target material a and substrate b respectively, to remove the impurity on sputtering target material a and the surface substrate b
(for example, water, oxide and other impurity), the impurity of removal is extracted from escape pipe 18.In the present embodiment, inert gas
For argon gas, it can also be certainly other inert gases, can be replaced accordingly according to the actual situation.By to inert gas into
The surface of sputtering target material and substrate is bombarded after row ionization, so that it is efficiently removed the impurity on sputtering target material and substrate surface,
It ensure that in coating process, the cleaning of sputtering target material and substrate surface, thus to the quality for improving the film layer being coated in substrate
It is beneficial, while can also be improved substrate to the adhesive force of film layer atom.
S3. it is passed through reaction gas into vacuum chamber 1, film layer is coated in substrate, wherein splashed with predetermined period checker
It shoots at the target the electric polarity of material a.In the present embodiment, it completes at predetermined intervals to the surface sputtering target material a and the surface substrate b
Preprocessing process, then reaction gas is further passed through into vacuum chamber 1 by the second air inlet pipe 172, starts the table in substrate b
Film layer is coated on face.In the present embodiment, inert gas is generated after the ionization of ion source 15 with positive charge
Plasma, and plasma constantly bombards sputtering target material a, so that the atom sputtering on target to the surface substrate b and adheres to.
After being passed through vacuum chamber 1 with predetermined pressure, reaction gas is reacted reaction gas with the atom that the surface substrate b is adhered to, thus
Complete being coated with for film layer.In the present embodiment, the volume flow that reaction gas is passed through is less than 120sccm.
In the present embodiment, pass through the electrode of 13 checker target pedestal 11 of electrode switching device with predetermined period
Property, so that the electric polarity of the sputtering target material a on different target pedestals 11 is transformed to cathode with predetermined period.For example, working as target pedestal
11 be two when, the electric polarity cathode of the sputtering target material a on one of target pedestal 11 is made by electrode switching device 13,
The not aobvious electric polarity of sputtering target material a on another target pedestal 11.After having served as certain time (predetermined period), electric polarity is yin
The sputtering target material a of pole passes through the transformation of electrode switching device 13, converts its electric polarity, and another sputtering target material a
Electric polarity then becomes cathode.By the electric polarity of checker sputtering target material a, to realize that the present invention in coating process, makes
Positively charged plasma bombards electric polarity in turn and is the sputtering target material a of cathode, so that the long-time bombardment avoided is same
Sputtering target material a and lead to sputtering target material a " poisoning ", and then avoid in coating process, the failure of sputtering target material a effectively mentions
The high service life of sputtering target material a, ensure that being carried out continuously for sputtering reaction, and further improve the plating of filming equipment
Membrane efficiency.In the present embodiment, when being coated with film layer in substrate, sputtering reaction temperature is 80 DEG C~300 DEG C, sputter rate
V meets: 0.1nm/s≤V≤1nm/s.By the atom sputtering on target to substrate surface, sputter reaction temperature be 80 DEG C~
300 DEG C, sputter rate is arranged in the range of 0.1nm/s≤V≤1nm/s, can preferably match rotation where substrate chuck 12
Transfer from one department to another the jittering characteristic of system, to make the disk difference for the substrate b being carried in substrate chuck 12 be less than 6nm, to make former on base
The attachment of son is more uniform, and then makes in substrate that the thickness of plated film is uniform, keeps coating effects more preferable, coating performance is more excellent.
A kind of embodiment according to the present invention, inert gas use argon gas, and reaction gas uses hydrogen or oxygen.At this
In embodiment, the volume flow that argon gas, hydrogen, oxygen are passed through into vacuum chamber 1 respectively is less than 120sccm, and when reaction
When gas is hydrogen, the volume flow of argon gas and hydrogen meets:
0.2≤VH2/VAr≤ 0.5,
Wherein, the VH2For the volume flow of hydrogen, the VArFor the volume flow of argon gas.
It is set smaller than 120sccm by the volume flow that argon gas, hydrogen, oxygen are passed through in vacuum chamber 1, and when anti-
When to answer gas be hydrogen, the volume flow of argon gas and hydrogen meets 0.2≤VH2/VAr≤ 0.5, then it can be in the process for being coated with film layer
In be effectively improved the product stress of plated film, to keep the film layer internal structure being coated with more stable, improve plating membrane stress bending
Caused uniformity is poor, film layer fragmentation, collapses film, attaches the defects of glue rear demoulding, improves properties of product and yield, further
It ensure that the service life and using effect of film layer.As shown in Fig. 2, at 150 DEG C of temperature, reaction gas hydrogen volume flow is
35sccm plates the Si:H of 120nm by changing different inert sputter gas argon flow in 0.5mm D263 substrate of glass respectively,
It can be found that with the promotion of argon flow, stress in thin film is first reduced and is increased afterwards.It, can be with when therefore, using above-mentioned setting condition
Stress in thin film is greatly reduced, optical filter bending is improved.
In the present embodiment, in step S3, the film layer being coated on substrate b includes that IR band logical film layer and AR long wave lead to film
Layer.IR band logical film layer and AR long wave lead to film layer and are coated on the opposite two sides substrate b respectively.In the present embodiment, IR band logical film
Layer and AR long wave lead to film layer and first refractive index material, the second refraction materials, two kinds in third reflect rate material are respectively adopted
Or three kinds of alternatings are coated with, for example, two kinds of materials can be respectively adopted in the plating prepared material that IR band logical film layer and AR long wave lead to film layer
It is coated with；Alternatively, the plating prepared material that IR band logical film layer and AR long wave lead to film layer can be respectively adopted three kinds of materials and is coated with；Or
Person, IR band logical film layer are coated with using two kinds of materials, and AR long wave is led to film layer and is coated with using three kinds of materials；Or IR band logical film layer uses
Three kinds of materials are coated with, and AR long wave is led to film layer and is coated with using two kinds of materials.When being coated with above-mentioned film layer using two kinds of materials, then two kinds
The combination of material can be first refractive index material and the second refraction materials or first refractive index material and third reflect rate material
Material or third reflect rate material and the second refraction materials, it should be pointed out that third reflect rate material and the second refractive index material
Material is different.When being coated with above-mentioned film layer using three kinds of materials, then the group of three kinds of materials is combined into first refractive index material, second
Refraction materials and third reflect rate material.In the present embodiment, the refractive index of first refractive index material is less than 3, second foldings
The refractive index for penetrating rate material is greater than 3, and the refractive index of third reflect rate material is less than 4.It is pointed out that first refractive index material
Material, the second refraction materials, third reflect rate material are different.In the present embodiment, first refractive index material is five oxidations two
Niobium (Nb2O5), tantalum pentoxide (Ta2O5), titanium dioxide (TiO2), silica (SiO2), zirconium dioxide (ZrO2) nitridation
Two silicon (Si2N), a silicon nitride (SiN), three two silicon (Si of nitridation2N3), silicon nitride (Si3N4) one or more of it is mixed
Close object.Second refraction materials can be silane (Si:H), and substrate uses D263 white glass or AF32 white glass material.It needs
, it is noted that it is antireflective film, i.e. anti-reflection film that AR long wave, which leads to film layer, IR band logical film layer is infrared cut coating.
As shown in figure 3, it is respectively multilayer that a kind of embodiment according to the present invention, IR band logical film layer and AR long wave, which lead to film layer,
Membrane structure.In the present embodiment, IR band logical film layer and AR long wave lead to one layer that film layer is connect with substrate b respectively using the first folding
It penetrates rate material or third reflect rate material is coated with.IR band logical film layer and AR long wave lead to close with incident medium one layer respectively of film layer
It is coated with using first refractive index material or third reflect rate material is coated with, by using first refractive index material or third reflect rate
Material, the advantage that adhesive force is outstanding, hardness is high, wearability is good, corrosion resistance is strong, to realize plated film of the invention in base
Adhesion effect on the b of bottom is good, and intensity is high.
A kind of embodiment according to the present invention, it is shown in Figure 3, if IR band logical film layer is more with five sub- film layers
Layer structure, and when IR band logical film layer is to be coated with using two kinds of materials of first refractive index material and the second refraction materials, then
First refractive index material is coated on the surface of substrate b first and constitutes the first sub- film layer, is coated with the second folding in the first sub- film layer
It penetrates rate material and constitutes the second sub- film layer, first refractive index material is coated in the second sub- film layer and constitutes the sub- film layer of third, in third
It is coated with the second refraction materials in sub- film layer and constitutes the 4th sub- film layer, first refractive index material composition is coated in the 4th sub- film layer
5th sub- film layer.In the present embodiment, what AR long wave led to film layer is coated with that mode is identical as aforesaid way, and details are not described herein.
Another embodiment according to the present invention, it is shown in Figure 3, if IR band logical film layer is with five sub- film layers
Multilayered structure, and when IR band logical film layer is to be coated with (to need using two kinds of materials of first refractive index material and third reflect rate material
It is noted that first refractive index material and third reflect rate material are different, and the refractive index of third reflect rate material
Greater than the refractive index of first refractive index material) when, then first refractive index material is coated on the surface of substrate b first and constitutes first
Sub- film layer is coated with third reflect rate material in the first sub- film layer and constitutes the second sub- film layer, is coated with first in the second sub- film layer
Refraction materials constitute the sub- film layer of third, and third reflect rate material is coated in the sub- film layer of third and constitutes the 4th sub- film layer, the
It is coated with first refractive index material in four sub- film layers and constitutes the 5th sub- film layer.In the present embodiment, AR long wave leads to being coated with for film layer
Mode is identical as aforesaid way, and details are not described herein.
Another embodiment according to the present invention, it is shown in Figure 3, if IR band logical film layer is with five sub- film layers
Multilayered structure, and when IR band logical film layer is to be coated with (to need using two kinds of materials of third reflect rate material and the second refraction materials
It is noted that third reflect rate material and the second refraction materials are different, and the refractive index of third reflect rate material
Less than the refractive index of the second refraction materials) when, then third reflect rate material is coated on the surface of substrate b first and constitutes first
Sub- film layer is coated with the second refraction materials in the first sub- film layer and constitutes the second sub- film layer, is coated with third in the second sub- film layer
Refraction materials constitute the sub- film layer of third, and the second refraction materials are coated in the sub- film layer of third and constitute the 4th sub- film layer, the
It is coated with third reflect rate material in four sub- film layers and constitutes the 5th sub- film layer.In the present embodiment, AR long wave leads to being coated with for film layer
Mode is identical as aforesaid way, and details are not described herein.
Another embodiment according to the present invention, it is shown in Figure 3, if IR band logical film layer is with five sub- film layers
Multilayered structure, and when IR band logical film layer is using first refractive index material, the second refraction materials and third reflect rate material
Three kinds of materials are coated with (it should be pointed out that third reflect rate material and the second refraction materials are different, and the second refraction
The refractive index of rate material is greater than the refractive index of third reflect rate material and first refractive index material) when, then first in the table of substrate b
It is coated with first refractive index material on face and constitutes the first sub- film layer, the second refraction materials are coated in the first sub- film layer and constitute second
Sub- film layer is coated with third reflect rate material in the second sub- film layer and constitutes the sub- film layer of third, is coated with second in the sub- film layer of third
Refraction materials constitute the 4th sub- film layer, and first refractive index material is coated in the 4th sub- film layer and constitutes the 5th sub- film layer.At this
In embodiment, what AR long wave led to film layer is coated with that mode is identical as aforesaid way, and details are not described herein.
It is shown in Figure 4, it can be seen that in the finished product characteristic curve that filming equipment according to the present invention is coated with, through the invention
The film layer being coated with can satisfy within the scope of the light wave of 350-1200nm, only the spy in the light wave range intervals of 800-1200nm
There are the passband of a high transmittance, other wave bands all to be ended for standing wave section, reaches OD2 or more by degree.Therefore, by this hair
Bright filming equipment and film plating process, may be implemented within the scope of 800-1200nm light wave, and the refractive index of the second refraction materials is big
In 3.55, extinction coefficient is less than 0.002；Cause passband to significantly improve infrared narrow band filter with incident angle variation
Central wavelength drift value, in 0 ° and 30 ° of incidence angles, passband center wavelengths drift value is less than 15nm.
Above content is only the example of concrete scheme of the invention, for the equipment and structure of wherein not detailed description, is answered
When being interpreted as that the existing common apparatus in this field and universal method is taken to be practiced.
The foregoing is merely a schemes of the invention, are not intended to restrict the invention, for the technology of this field
For personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (14)
1. a kind of filming equipment, including vacuum chamber (1), the target pedestal (11) being arranged in the vacuum chamber (1) and substrate folder
Have (12), the target pedestal (11) is set to the top of the substrate chuck (12)；It is characterized in that, further including electrode switching
Device (13)；
The electrode switching device (13) and the target pedestal (11) are connected with each other, and the target pedestal (11) is even number
It is a.
2. filming equipment according to claim 1, which is characterized in that be provided with linear displacement on the target pedestal (11)
Device；
Along the vertical direction, the linear displacement apparatus drives the target pedestal (11) to move back and forth.
3. filming equipment according to claim 1 or 2, which is characterized in that further include: it is set in the vacuum chamber (1)
It is adjacent with the target pedestal (11) and for providing and enhance target pedestal (11) position plasma motion speed
Radio-frequency signal generator (14), and setting and the vacuum chamber (1) outside and the alternating magnetic field opposite with the target pedestal (11)
Device (19).
4. filming equipment according to claim 3, which is characterized in that further include: be arranged on the vacuum chamber (1) from
Component (15) and air extractor (16), it is described for extracting for being passed through the air inlet pipe (17) of gas in the vacuum chamber (1)
The escape pipe (18) of gas in vacuum chamber (1)；
The air inlet pipe (17) includes the first air inlet pipe (171) for conveying inert gas and for being passed through reaction gas
Two air inlet pipe (172).
5. filming equipment according to claim 4, which is characterized in that the air inlet pipe (17) and the escape pipe (18) phase
To setting.
6. filming equipment according to claim 1, which is characterized in that the electrode switching device (13) is cut for ac electrode
Changing device.
7. a kind of film plating process using any filming equipment of claim 1 to 6, comprising:
S1., sputtering target material and substrate are installed respectively in vacuum chamber (1), and by the pressure control in vacuum chamber (1) in default pressure
Force value；
S2. it is passed through inert gas to the vacuum chamber (1), and the sputtering target material and institute will be bombarded after the ionized inert gas
The surface for stating substrate is pre-processed；
S3. it is passed through reaction gas in the vacuum chamber (1), is coated with film layer on the substrate, wherein replace with predetermined period
Convert the electric polarity of the sputtering target material.
8. film plating process according to claim 1, which is characterized in that the inert gas and the reaction gas were passed through
Volume flow is less than 120sccm.
9. film plating process according to claim 8, which is characterized in that the inert gas is argon gas, the reaction gas
For hydrogen or oxygen；
If the reaction gas is hydrogen, 0.2≤V of volume flow satisfaction of the argon gas and the hydrogenH2/VAr≤ 0.5,
In, the VH2For the volume flow of hydrogen, the VArFor the volume flow of argon gas.
10. film plating process according to claim 9, which is characterized in that in step S3, be coated with film layer on the substrate
When, sputtering reaction temperature is 80 DEG C~300 DEG C, and sputter rate V meets: 0.1nm/s≤V≤1nm/s.
11. the film plating process according to claim 7 or 10, which is characterized in that in step S3, the film layer includes IR band logical
Film layer and AR long wave lead to film layer, and the IR band logical film layer and the AR long wave lead to film layer and be coated on opposite two of the substrate respectively
Side；
The IR band logical film layer and the AR long wave lead to film layer and first refractive index material, the second refraction materials, the are respectively adopted
Alternately be coated with two or three in three refraction materials, wherein the refractive index of the first refractive index material less than 3,
The refractive index of second refraction materials is greater than 3, and the refractive index of the third reflect rate material is less than 4.
12. film plating process according to claim 11, which is characterized in that the IR band logical film layer and the AR long wave lead to film
The one layer of use first refractive index material or the third reflect rate material that layer is connect with the substrate respectively are coated with；
The IR band logical film layer and the AR long wave lead to film layer and use the first refractive for one layer close with incident medium respectively
Rate material or the third reflect rate material are coated with.
13. film plating process according to claim 11, which is characterized in that the first refractive index material is Nb2O5、Ta2O5、
TiO2、SiO2、ZrO2、Si2N、SiN、Si2N3、Si3N4One or more of mixture.
14. film plating process according to claim 11, which is characterized in that second refraction materials are silane.
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| CN201810884395.4A CN109023273B (en) | 2018-08-06 | 2018-08-06 | Coating equipment and coating method |
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| CN201810884395.4A CN109023273B (en) | 2018-08-06 | 2018-08-06 | Coating equipment and coating method |
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| CN113109898A (en) * | 2021-04-07 | 2021-07-13 | 浙江水晶光电科技股份有限公司 | Preparation method of hydrogenated compound film and optical filter |
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