CN2873799Y - Magnetic sputter target with online cleaning function - Google Patents
Magnetic sputter target with online cleaning function Download PDFInfo
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- CN2873799Y CN2873799Y CN 200520011542 CN200520011542U CN2873799Y CN 2873799 Y CN2873799 Y CN 2873799Y CN 200520011542 CN200520011542 CN 200520011542 CN 200520011542 U CN200520011542 U CN 200520011542U CN 2873799 Y CN2873799 Y CN 2873799Y
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- sputter
- power supply
- cleaning
- magnetron sputtering
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Abstract
The utility model provides a magnetron sputter target which has the on-line cleaning function and can prevent the pollution in the process of ion etching and cleaning. The target material is pipe-shaped, disc-shaped, or ring-shaped which can rotate around its center axis. In the passed rotating circumferential area, a locally space charged with inactive gas is formed by barrier wall and is controlled by the internal magnetic field. On the outside pipe-shaped surface of the target material, two group axial bar-shaped sputtering tracks are formed which transmit orientation are essentially fixed. The main sputter power is connected between the target material and the main anode of the coater for sputtering coating. The auxiliary cleaning power is connected between the target material and the cleaning anode which is in the local space for cleaning the sputtering etches on the target material surface. Even in high reacting gas concentration, the magnetron sputter target can still maintain the stability of the sputter working condition of the target surface thereby improving the deposition rate of compound film. The utility model is also convenient for cleaning the ion etches of the target material, and essentially prevent pollution on the work piece and cross contamination between target materials.
Description
Technical field
The utility model belongs to the physical gas phase deposition technology field, specifically belongs to the equipment and the application method thereof of sputter, particularly magnetron sputtering.
Background technology
In the reactive sputtering coating process, reactant gas generates compound film gradually at target material surface, changes the normal operating conditions of target, even causes the target material surface poisoning; In addition at target material surface in advance in the sputter clean process, be easy to cause the workpiece to be plated surface contamination and cause crossed contamination between the target or the like in the sputter clean process in advance at many targets, a series of problems are perplexing research, development and the commercial application of sputter coating, do not find a simple and effective terms of settlement at present as yet.
Summary of the invention
For solving above-mentioned outstanding issue, the utility model proposes a kind of magnetron sputtering target that has function of on-line cleaning and prevent sputter clean process pollution in advance.
For achieving the above object, to the effect that of the present utility model:
Having can be around the target of its central axis rotation, rotation the part circumferential area of process form local space with shielding wall, wherein charge into rare gas element; Each sputter part on the target and near subregion thereof are in reactive sputtering plated film working process, can periodically enter in the local space and be cleaned by the inert gas ion etching, thereby make the generation situation of target surface compound film can stablize control, avoid entering the target surface toxic state.
Target is tubular or disc or annular, can be around its central axis rotation, control by internal magnetic field, on the tubular outside surface of target, form the axial long strip shape sputter runway of two groups of launch azimuth basic fixed, wherein first group of sputter runway is towards intravital fan-shaped solid angle space, coating equipment chamber, by the main shielding power supply excitation build-up of luminance sputter that is equipped with, carry out the reactive sputtering plated film, second group of sputter runway is positioned at back face of target or side, clean power supply excitation build-up of luminance by the auxiliary etch that is equipped with and carry out the ion sputtering etching and clean, its waste is closed in the local space by the formed sealing of shielding wall; Rotation the part circumferential area of process form local space with shielding wall, wherein charge into rare gas element, anode purge and distribution device are set in local space, charge into air pressure that rare gas element makes local space a little more than or equal to react plated film spatial air pressure; Main shielding power supply such as DC or pulse or RF power supply etc. are connected between target and the coating equipment main anode (being generally the metallic walls of coating equipment cavity), or incoming transport shielding power supply (bipolar pulse power supply) between two targets, encouraged the glow discharge sputtering in first group of sputter runway orientation, carry out sputter coating, auxiliary etch cleans power supply and is connected between the interior anode purge of target and local space, encouraged the glow discharge sputtering in second group of sputter runway orientation, the target material surface ise is cleaned, and above-mentioned main shielding power supply and auxiliary etch clean power supply can distinguish independent the setting or both synthetic power supplys.
This application method with magnetron sputtering target of function of on-line cleaning is: the sputter on target part and near the subregion, in reactive sputtering plated film working process, can periodically enter in the local space and be cleaned by the inert gas ion etching, thereby make the generation situation of target surface compound film can stablize control, avoid entering the target surface toxic state: when target being carried out reactive sputtering in the aura position of first group of sputter runway, aura position at second group of sputter runway is cleaned the inert gas ion that target carries out to a certain degree, continuously rotation and the relative orientation of two groups of sputter runways is constant of target reaches the continuous on-line cleaning to whole target surface; By rotation, the compound film that in reaction plated film space, is generated on the target material surface, in the time of in changing the inert atmosphere of local space over to, can be by the inert gas ion part in the aura orientation of second group of sputter runway or all sputter removings, when making this part surface enter the reaction coating film area once more, state changes or becomes fully metallic state to metallic state.So circulation forms continuous on-line cleaning, even therefore under the reacting gas concentration condition with higher in reaction plated film space, it is relatively stable for a long time that the sputter working order of whole target material surface also can keep continuously, the generation of compound film and removing ratio reach long-time running balance on the target surface on the needed degree of technology, avoid entering the target toxic state, can improve the sedimentation rate of compound film on workpiece, and keep the continuous stability of technology.
Effect of the present utility model is conspicuous: prove by experiment, according to magnetron sputtering target of the present utility model and correlation technique thereof, the tubular sputtering target of target rotational circle with the two sputter runways of strip has continuous function of on-line cleaning, promptly on the tubular surface of target, in a part of zone, carry out in the main sputter coating, carrying out ion etching in another part zone cleans, even under higher reacting gas concentration, the sputter stable working state that also can keep target surface, improve the sedimentation rate of compound film on workpiece, and kept the technology circulation ratio substantially; The utility model cleans the target etching with inert gas ion in local space by only opening the etching power supply in the sputter clean operation in advance, has prevented the crossed contamination between workpiece surface pollution and the target substantially.
Description of drawings
Rectangular sputter runway synoptic diagram on Fig. 1 .1-1.4. tubular target material surface and target body internal magnetic field synoptic diagram;
Sputter runway 2 etchings are cleaned synoptic diagram in the local space of the sealing that Fig. 2 .1-2.2. is formed by shielding wall;
The local space synoptic diagram of Fig. 3 .1-3.2. sealing;
Fig. 4. the axial length of two groups of runways equates or second group of slightly longer synoptic diagram;
Fig. 5 .1 master shielding power supply and auxiliary etch clean power supply synoptic diagram independently are set respectively;
Fig. 5 .2 master shielding power supply (bipolar pulse AC power) and auxiliary etch clean power supply synoptic diagram independently are set respectively;
Fig. 6. main shielding power supply and auxiliary etch clean the synthetic power supply synoptic diagram of power supply;
Fig. 7. a circulation synoptic diagram of the on-line cleaning process of target material surface;
Two groups of shared main anodes of sputter runway of Fig. 8 .1-8.2 and by a main shielding power supply excitation sputter synoptic diagram;
Fig. 9. charge into rare gas element in local space, clean under the power supply excitation at auxiliary etch with anode purge, ise cleans the target synoptic diagram;
The online etching of Figure 10 .1-10.2. disc or annular target is cleaned synoptic diagram;
Figure 11. the feedback quantity of the real-time observing and controlling of spectrum and the power of main shielding power supply, auxiliary etch clean the power of power supply and the input flow rate thrin of reactant gases forms the closed-loop control synoptic diagram;
Figure 12. only use auxiliary etch to clean power supply and feeding rare gas element, only in local space pre-etching is carried out on the rotary target material surface and clean, prevention is to the pollution on workpiece to be plated surface and the crossed contamination synoptic diagram between the target.
In accompanying drawing 1～12, first group of sputter runway of 1-, second group of sputter runway of 2-, the reactive sputtering plated film space region in the 3-cavity, the etching space region of sealing in the 4-cavity, the 5-anode purge, the 6-tracheae, the 7-auxiliary etch cleans power supply, 8-master's shielding power supply, 9-master's sputter and auxiliary etch clean both and unify power supply, the 10-compound film, 11-shielding wall, 12-disc target, 13-annular target, 14-workpiece pivoted frame, the 15-target, 16-exchanges shielding power supply, designated area on the 17-target material surface, the aura of 18-sputter clean.
Embodiment
Now in conjunction with the accompanying drawings the utility model is described further.
1) agent structure of the present utility model: target is tubular or disc or annular, can be around its central axis rotation, by internal magnetic field control, on the tubular outside surface of target, form the axial long strip shape sputter runway (Fig. 1 .1-1.4) of two groups of launch azimuth basic fixed; Wherein first group of sputter runway 1 by the reactive sputtering plated film space 3 excitation build-up of luminance sputters of the main shielding power supply 8 that is equipped with in cavity, carries out the reactive sputtering plated film towards intravital fan-shaped solid angle space, coating equipment chamber; Second group of sputter runway 2 is positioned at target 15 back sides or side, clean etching spatial excitation build-up of luminance that power supply 7 seals by the auxiliary etch that is equipped with in cavity and carry out the ion sputtering etching and clean, its waste is closed in the local space of the sealing that is formed by shielding wall 11 (Fig. 2 .1-2.2).
2) local space structure of the present utility model: anode purge 5 (general water flowing cooling) and distribution device are set in local space, distribution device is provided with tracheae 6, charges into rare gas element (as argon gas etc.) by distribution device and makes the air pressure P1 of local space a little more than (or equaling) reaction plated film spatial air pressure P2 (Fig. 3 .1-3.2);
3) the utility model power supply mode of connection: main shielding power supply 8 is connected between target and the coating equipment main anode (being generally the metallic walls of coating equipment cavity) as DC or pulse or RF power supply etc., or incoming transport shielding power supply 16 between two targets, encourage the glow discharge sputtering in first group of sputter runway 1 orientation, carried out the reactive sputtering plated film; Auxiliary etch cleans power supply 7 and is connected between the anode purge 5 (general water flowing is cooled off) in target and the local space, has encouraged the glow discharge sputtering in second group of sputter runway 2 orientation, and the target material surface ise is cleaned; Above-mentioned main shielding power supply 8 and auxiliary etch clean power supply 7 can distinguish independent setting (Fig. 5 .1 or 5.2), or both synthetic main sputters and auxiliary etch clean both and unify power supply 9 (Fig. 6).
4) axial length of two groups of runways equate or second group slightly longer, as shown in Figure 4, guarantee to clean regional nothing left and leak.
5) the surperficial on-line cleaning process of target of the present utility model:when target being carried out reactive sputtering in the aura position of first group of sputter runway 1; Aura position at second group of sputter runway 2 is cleaned the inert gas ion that target carries out to a certain degree; The relative orientation of two groups of sputter runways is constant because target rotates continuously; Thereby reaches the continuous on-line cleaning to whole target surface.By rotation; The compound film 10 that in reaction plated film space; Is generated on the target material surface; In the time of in changing the inert atmosphere of local space over to; Can by the inert gas ion part in the aura orientation of second group of sputter runway 2 or all sputter remove; thereby state changes or becomes fully metallic state to metallic state when making this part surface enter the reaction coating film area once more. （ ） ,：1710 （ A ） →173 （ B ） →174 （ C ） →1710 （ D ） →174 （ E ） →173 （ F ） →17 （ A ） 。 So circulation forms continuous on-line cleaning, even therefore under the reacting gas concentration condition with higher in reaction plated film space, it is relatively stable for a long time that the sputter working order of whole target material surface also can keep continuously, the generation of compound film 10 and removing ratio reach long-time running balance on the target surface on the needed degree of technology, avoid target material surface to enter toxic state, and can improve the sedimentation rate of compound film 10 on workpiece, and keep the continuous stability (Fig. 7) of technology.
6) a kind of mode of using as this technology, in implementation process, in reactive sputtering plated film space, under the less situation of non-reactive gas or reactant gas concentration is lower or target material surface generates compound film 10, can close auxiliary etch and clean power supply 7; Also can open and close auxiliary etch in the course of the work discontinuously and clean power supply 7, carry out the principle of work of interrupted on-line cleaning etching, guarantee the long-time continuous stable of reactive sputtering process process according to the compound film 10 that target surface is generated.
7) as a kind of simplification of this technology, in implementation process, can cancel above-mentioned anode purge 5 and auxiliary etch and clean power supply 7, only with the layout of above-mentioned two groups of sputter runways with in local space, charge into the mode of rare gas element, and part main anode (metallic walls of coating equipment cavity) is exposed in this local space, two groups of shared main anodes of sputter runway and by main shielding power supply 8 excitation sputters, the compound film 10 that same basis generates target surface carries out the principle of work of continuous on-line cleaning etching, guarantees the long-time continuous stable (Fig. 8 .1-8.2) of reactive sputtering process process.
8) as another simplification of this technology, in implementation process, can cancel above-mentioned second group of sputter runway 2, employing charges into rare gas element in local space, utilize anode purge 5, make aura 18 discharges of the target material surface generation single-arc shaped shape sputter clean under 7 excitations of auxiliary etch cleaning power supply in the local space and obtain ise and clean, the compound film 10 that same basis generates target surface carries out the principle of work of continuous or interrupted on-line cleaning etching, guarantees the long-time continuous stable (Fig. 9) of reactive sputtering process process.
9) the above-mentioned feature 1 of foundation)～8) method and principle, target can also be designed to disc target 12 or annular target 13, the first sputter runway 1 of reactive sputtering carries out in the main sputter on target material surface, second group of sputter runway 2 in local space carries out ion etching and cleans, and anode purge 5 correspondingly is set and feeds rare gas element to make wherein pressure a little more than (or equaling) reactive sputtering space pressure in local space; Second group of sputter runway 2 length equaled or be longer than the first sputter runway, 1 length.Its principle and working process and application mode and reduction procedure etc. are all with above-mentioned cylindrical target (Figure 10 .1-10.2).
10) by suitably regulating the power that auxiliary etch cleans power supply 7, perhaps periodically the ON/OFF auxiliary etch cleans power supply 7 and changes the time ratio of opening and closing, the generation and the removing ratio of itself and required target surface compound film 10 are complementary, to reach best etching cleaning performance and don't to consume target too much.
11) by near the real-time observing and controlling of feature plasma emission spectroscopy the target surface in sputter deposition process just, and with the power (or electric current) of its feedback quantity and main shielding power supply 8, the power of auxiliary etch cleaning power supply 7 or the input flow rate thrin formation closed-loop control of electric current or switch/time scale and reactive working gas, with the technological process of accurate control reaction plated film and the circulation ratio (Figure 11) of assurance technology.
12) adopt this programme, when sputter clean target material surface in advance, do not open main shielding power supply 8 and do not feed reactant gases, only use auxiliary etch to clean power supply 7 and feeding rare gas element, only in local space, etching cleaning is in advance carried out on the rotary target material surface, help eliminating the pollution that brought of sputter clean operation in advance of traditional target material surface, and eliminate the drawbacks such as crossed contamination (Figure 12) between each target in traditional many target systems the workpiece surface on the workpiece to be plated pivoted frame 14.
Claims (6)
1. magnetron sputtering target with function of on-line cleaning is characterized in that:
Having can be around the target of its central axis rotation, rotation the part circumferential area of process form local space with shielding wall, be inert gas atmosphere in the local space.
2. according to the described a kind of magnetron sputtering target of claim 1, it is characterized in that target is can be around the disc or the annular of its central axis rotation with function of on-line cleaning.
3. magnetron sputtering target with function of on-line cleaning is characterized in that:
(1) having can be around the tubular target of its central axis rotation;
(2) on the tubular outside surface of target, has the axial long strip shape sputter of launch azimuth fixed runway;
(3) rotation the part circumferential area of process form local space with shielding wall, be inert gas atmosphere in the local space, anode purge and distribution device are set in local space, the air pressure in the local space is greater than or equal to and reacts plated film spatial air pressure;
(4) main shielding power supply is connected between target and the coating equipment main anode, or incoming transport shielding power supply between two targets; Auxiliary etch cleans power supply and is connected between the anode purge in target and the local space, and above-mentioned main shielding power supply and auxiliary etch clean power supply can distinguish independent be provided with or both synthesize power supplys.
4. according to the described magnetron sputtering target of claim 3 with function of on-line cleaning, it is characterized in that: said magnetron sputtering runway is one group, this magnetron sputtering runway is towards intravital fan-shaped solid angle space, coating equipment chamber, by the main shielding power supply excitation build-up of luminance sputter that is equipped with.
5. according to the described magnetron sputtering target of claim 3 with function of on-line cleaning, it is characterized in that: said magnetron sputtering runway is two groups, wherein first group of sputter runway is towards intravital fan-shaped solid angle space, coating equipment chamber, by the main shielding power supply excitation build-up of luminance sputter that is equipped with, second group of sputter runway is positioned at back face of target or side, cleans power supply excitation build-up of luminance by the auxiliary etch that is equipped with and carries out the cleaning of ion sputtering etching.
6. according to the described a kind of magnetron sputtering target with function of on-line cleaning of claim 5, it is characterized in that: the axial length of two groups of runways on the tubular target equates or second group leader.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520011542 CN2873799Y (en) | 2005-04-08 | 2005-04-08 | Magnetic sputter target with online cleaning function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520011542 CN2873799Y (en) | 2005-04-08 | 2005-04-08 | Magnetic sputter target with online cleaning function |
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| Publication Number | Publication Date |
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| CN2873799Y true CN2873799Y (en) | 2007-02-28 |
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| CN 200520011542 Expired - Fee Related CN2873799Y (en) | 2005-04-08 | 2005-04-08 | Magnetic sputter target with online cleaning function |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102027154B (en) * | 2008-05-26 | 2012-07-18 | 株式会社爱发科 | Sputtering method |
| CN101685771B (en) * | 2008-09-22 | 2013-10-23 | 台湾积体电路制造股份有限公司 | Method for pre-conditioning and stabilizing an etching chamber and method for cleaning etching chamber |
| CN112281126A (en) * | 2020-10-29 | 2021-01-29 | 河南卓金光电科技股份有限公司 | Reactive magnetron sputtering separation type gas distribution method |
-
2005
- 2005-04-08 CN CN 200520011542 patent/CN2873799Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102027154B (en) * | 2008-05-26 | 2012-07-18 | 株式会社爱发科 | Sputtering method |
| CN101685771B (en) * | 2008-09-22 | 2013-10-23 | 台湾积体电路制造股份有限公司 | Method for pre-conditioning and stabilizing an etching chamber and method for cleaning etching chamber |
| CN112281126A (en) * | 2020-10-29 | 2021-01-29 | 河南卓金光电科技股份有限公司 | Reactive magnetron sputtering separation type gas distribution method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070228 Termination date: 20100408 |