FR2705104B1 - Procédé pour augmenter la vitesse de revêtement, procédé pour réduire la densité de poussière dans un espace de décharge de plasma, et chambre à plasma. - Google Patents
Procédé pour augmenter la vitesse de revêtement, procédé pour réduire la densité de poussière dans un espace de décharge de plasma, et chambre à plasma.Info
- Publication number
- FR2705104B1 FR2705104B1 FR9405316A FR9405316A FR2705104B1 FR 2705104 B1 FR2705104 B1 FR 2705104B1 FR 9405316 A FR9405316 A FR 9405316A FR 9405316 A FR9405316 A FR 9405316A FR 2705104 B1 FR2705104 B1 FR 2705104B1
- Authority
- FR
- France
- Prior art keywords
- dust
- density
- increasing
- reducing
- discharge space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH01344/93A CH687987A5 (de) | 1993-05-03 | 1993-05-03 | Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2705104A1 FR2705104A1 (fr) | 1994-11-18 |
FR2705104B1 true FR2705104B1 (fr) | 1997-08-08 |
Family
ID=4208289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9405316A Expired - Lifetime FR2705104B1 (fr) | 1993-05-03 | 1994-05-02 | Procédé pour augmenter la vitesse de revêtement, procédé pour réduire la densité de poussière dans un espace de décharge de plasma, et chambre à plasma. |
Country Status (5)
Country | Link |
---|---|
US (2) | US5693238A (fr) |
JP (2) | JP3683599B2 (fr) |
CH (1) | CH687987A5 (fr) |
DE (2) | DE4447977B4 (fr) |
FR (1) | FR2705104B1 (fr) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH687987A5 (de) * | 1993-05-03 | 1997-04-15 | Balzers Hochvakuum | Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer. |
JP3315238B2 (ja) * | 1994-02-10 | 2002-08-19 | 富士写真フイルム株式会社 | 感光材料用支持体の真空処理用シール方法及び装置 |
TW376547B (en) * | 1997-03-27 | 1999-12-11 | Matsushita Electric Ind Co Ltd | Method and apparatus for plasma processing |
DE19713637C2 (de) * | 1997-04-02 | 1999-02-18 | Max Planck Gesellschaft | Teilchenmanipulierung |
JP3343200B2 (ja) * | 1997-05-20 | 2002-11-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6391377B1 (en) * | 1997-07-08 | 2002-05-21 | Unaxis Balzers Aktiengesellschaft | Process for vacuum treating workpieces, and corresponding process equipment |
CH692741A5 (de) * | 1997-07-08 | 2002-10-15 | Unaxis Trading Ltd C O Balzers | Verfahren zur Herstellung in Vakuum oberflächenbehandelter Werkstücke und Vakuumbehandlungsanlage zu dessen Durchführung |
TW589391B (en) * | 1997-07-08 | 2004-06-01 | Unaxis Trading Ag | Process for vacuum treating workpieces, and corresponding process equipment |
JPH11264071A (ja) * | 1998-03-18 | 1999-09-28 | Matsushita Electron Corp | 薄膜の形成方法 |
DE19814871A1 (de) | 1998-04-02 | 1999-10-07 | Max Planck Gesellschaft | Verfahren und Vorrichtung zur gezielten Teilchenmanipulierung und -deposition |
US6127271A (en) * | 1998-04-28 | 2000-10-03 | Balzers Hochvakuum Ag | Process for dry etching and vacuum treatment reactor |
DE69903035T2 (de) | 1998-06-26 | 2003-04-30 | Unaxis Trading Ag, Truebbach | Erwärmungsverfahren |
US6342132B1 (en) | 1999-10-29 | 2002-01-29 | International Business Machines Corporation | Method of controlling gas density in an ionized physical vapor deposition apparatus |
WO2002013225A2 (fr) * | 2000-08-08 | 2002-02-14 | Tokyo Electron Limited | Procede et appareil d'amelioration de l'uniformite du traitement au plasma |
US6514870B2 (en) * | 2001-01-26 | 2003-02-04 | Applied Materials, Inc. | In situ wafer heat for reduced backside contamination |
WO2004046416A1 (fr) | 2002-11-15 | 2004-06-03 | Unaxis Balzers Ag | Appareil de traitement sous vide de substrats dilates bidimensionnellement et procede de fabrication desdits substrats |
US20060249370A1 (en) * | 2003-09-15 | 2006-11-09 | Makoto Nagashima | Back-biased face target sputtering based liquid crystal display device |
KR100549273B1 (ko) * | 2004-01-15 | 2006-02-03 | 주식회사 테라세미콘 | 반도체 제조장치의 기판홀더 |
FR2869451B1 (fr) * | 2004-04-21 | 2006-07-21 | Alcatel Sa | Enveloppe de transport a protection par effet thermophorese |
EP1953794B1 (fr) * | 2004-11-24 | 2012-02-01 | Oerlikon Solar AG, Trübbach | Chambre de traitement sous vide pour les substrats de surface très large |
DE102004060377A1 (de) | 2004-12-15 | 2006-06-29 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Verfahren und Vorrichtung zum Betrieb einer Plasmaeinrichtung |
DE102005055093A1 (de) * | 2005-11-18 | 2007-05-24 | Aixtron Ag | CVD-Vorrichtung mit elektrostatischem Substratschutz |
US20070205096A1 (en) * | 2006-03-06 | 2007-09-06 | Makoto Nagashima | Magnetron based wafer processing |
DE202006007937U1 (de) | 2006-05-18 | 2007-09-20 | Strämke, Siegfried, Dr.-Ing. | Plasmabehandlungsanlage |
US8454810B2 (en) | 2006-07-14 | 2013-06-04 | 4D-S Pty Ltd. | Dual hexagonal shaped plasma source |
JP2010538476A (ja) | 2007-08-31 | 2010-12-09 | アプライド マテリアルズ インコーポレイテッド | 光電池製造ライン |
US20100047954A1 (en) * | 2007-08-31 | 2010-02-25 | Su Tzay-Fa Jeff | Photovoltaic production line |
JP2009130229A (ja) * | 2007-11-27 | 2009-06-11 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP5395415B2 (ja) | 2007-12-03 | 2014-01-22 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US7910929B2 (en) * | 2007-12-18 | 2011-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5527966B2 (ja) | 2007-12-28 | 2014-06-25 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ |
US20090188603A1 (en) * | 2008-01-25 | 2009-07-30 | Applied Materials, Inc. | Method and apparatus for controlling laminator temperature on a solar cell |
US8338317B2 (en) | 2011-04-06 | 2012-12-25 | Infineon Technologies Ag | Method for processing a semiconductor wafer or die, and particle deposition device |
CN103060774A (zh) * | 2011-10-24 | 2013-04-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 腔室装置及具有其的基片处理设备 |
NL2008208C2 (en) | 2012-01-31 | 2013-08-01 | Univ Delft Tech | Spark ablation device. |
EP2654070A1 (fr) | 2012-04-16 | 2013-10-23 | INDEOtec SA | Réacteur plasma de type capacitif pour le dépôt de films minces |
DE102013225608A1 (de) * | 2013-12-11 | 2015-06-11 | Apo Gmbh Massenkleinteilbeschichtung | Vorrichtung und Verfahren zur Oberflächenbehandlung von Kleinteilen mittels Plasma |
DE102014204159B3 (de) * | 2014-03-06 | 2015-06-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hochfrequenzelektrodenvorrichtung |
US10113236B2 (en) * | 2014-05-14 | 2018-10-30 | Applied Materials, Inc. | Batch curing chamber with gas distribution and individual pumping |
JP6363408B2 (ja) * | 2014-06-23 | 2018-07-25 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
DE102015119369A1 (de) * | 2015-11-10 | 2017-05-11 | INP Leipniz-Institut für Plalsmaforschung und Technologie e.V. | Vorrichtung, System und Verfahren zur Behandlung eines Gegenstandes mit Plasma |
EP3421638A1 (fr) * | 2017-06-28 | 2019-01-02 | Meyer Burger (Germany) GmbH | Dispositif de dépôt en phase vapeur haute température comprenant des distributeurs de gaz et des plaques de réception en configuration empilée |
DE102018132700A1 (de) | 2018-12-18 | 2020-06-18 | Krones Ag | Vorrichtung und Verfahren zum Beschichten und insbesondere Plasmabeschichten von Behältnissen |
GB2582948B (en) * | 2019-04-10 | 2021-12-08 | Thermo Fisher Scient Bremen Gmbh | Plasma source chamber for a spectrometer |
GB2592853B (en) * | 2019-09-12 | 2022-04-13 | Thermo Fisher Scient Ecublens Sarl | A spark stand and method of maintenance |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS565977A (en) * | 1979-06-29 | 1981-01-22 | Hitachi Ltd | Automatic evaporation apparatus |
JPS5763677A (en) * | 1980-10-03 | 1982-04-17 | Hitachi Ltd | Continuous vacuum treating device |
JPS5889944A (ja) * | 1981-11-26 | 1983-05-28 | Canon Inc | プラズマcvd装置 |
US4381965A (en) * | 1982-01-06 | 1983-05-03 | Drytek, Inc. | Multi-planar electrode plasma etching |
US4512283A (en) * | 1982-02-01 | 1985-04-23 | Texas Instruments Incorporated | Plasma reactor sidewall shield |
JPS59168641A (ja) * | 1983-03-15 | 1984-09-22 | Nec Corp | 反応性スパツタエツチング装置 |
JPS59181619A (ja) * | 1983-03-31 | 1984-10-16 | Toshiba Corp | 反応性イオンエツチング装置 |
JPS6015917A (ja) * | 1983-07-08 | 1985-01-26 | Hitachi Ltd | 分子線エピタキシ装置 |
US4579618A (en) * | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
US4668365A (en) * | 1984-10-25 | 1987-05-26 | Applied Materials, Inc. | Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition |
US4614639A (en) * | 1985-04-26 | 1986-09-30 | Tegal Corporation | Compound flow plasma reactor |
US4664938A (en) * | 1985-05-06 | 1987-05-12 | Phillips Petroleum Company | Method for deposition of silicon |
FR2589168B1 (fr) * | 1985-10-25 | 1992-07-17 | Solems Sa | Appareil et son procede d'utilisation pour la formation de films minces assistee par plasma |
US4668338A (en) * | 1985-12-30 | 1987-05-26 | Applied Materials, Inc. | Magnetron-enhanced plasma etching process |
JPS62192580A (ja) * | 1986-02-19 | 1987-08-24 | Seiko Epson Corp | スパツタ装置 |
JPS634064A (ja) * | 1986-06-24 | 1988-01-09 | Mitsubishi Electric Corp | 真空薄膜形成装置 |
JPS6332849A (ja) * | 1986-07-23 | 1988-02-12 | Nec Corp | 半導体製造装置 |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
WO1988009268A1 (fr) * | 1987-05-20 | 1988-12-01 | Planar Systems, Inc. | Procede de fabrication de panneaux en couleurs d'electrodes a couche mince |
JPS63303060A (ja) * | 1987-05-30 | 1988-12-09 | Tokuda Seisakusho Ltd | 真空処理装置 |
FR2621930B1 (fr) * | 1987-10-15 | 1990-02-02 | Solems Sa | Procede et appareil pour la production par plasma de couches minces a usage electronique et/ou optoelectronique |
JPH01125821A (ja) * | 1987-11-10 | 1989-05-18 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
DD274830A1 (de) * | 1988-08-12 | 1990-01-03 | Elektromat Veb | Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken |
JPH07105357B2 (ja) * | 1989-01-28 | 1995-11-13 | 国際電気株式会社 | 縦型cvd拡散装置に於けるウェーハ移載方法及び装置 |
AT397707B (de) * | 1989-09-25 | 1994-06-27 | Zumtobel Ag | Leuchte für eine leuchtstofflampe |
DE69014799T2 (de) * | 1989-09-26 | 1995-08-03 | Applied Materials Inc | Methode zur Verhinderung einer Partikel-Verunreinigung. |
US5102496A (en) * | 1989-09-26 | 1992-04-07 | Applied Materials, Inc. | Particulate contamination prevention using low power plasma |
US5367139A (en) * | 1989-10-23 | 1994-11-22 | International Business Machines Corporation | Methods and apparatus for contamination control in plasma processing |
JPH03153027A (ja) * | 1989-11-10 | 1991-07-01 | Seiko Epson Corp | エッチング方法及びエッチング装置 |
US5000682A (en) * | 1990-01-22 | 1991-03-19 | Semitherm | Vertical thermal processor for semiconductor wafers |
US5298720A (en) * | 1990-04-25 | 1994-03-29 | International Business Machines Corporation | Method and apparatus for contamination control in processing apparatus containing voltage driven electrode |
US5269847A (en) * | 1990-08-23 | 1993-12-14 | Applied Materials, Inc. | Variable rate distribution gas flow reaction chamber |
DE4031770A1 (de) * | 1990-10-06 | 1992-04-09 | Leybold Ag | Vorrichtung zur vermeidung von staubbildung |
JPH08977B2 (ja) * | 1991-08-22 | 1996-01-10 | 日新電機株式会社 | プラズマcvd法及び装置 |
DE9113860U1 (de) * | 1991-11-07 | 1992-01-23 | Leybold AG, 6450 Hanau | Vorrichtung zum Beschichten von vorzugsweise flachen, etwa plattenförmigen Substraten |
US5302237A (en) * | 1992-02-13 | 1994-04-12 | The United States Of America As Represented By The Secretary Of Commerce | Localized plasma processing |
US5328555A (en) * | 1992-11-24 | 1994-07-12 | Applied Materials, Inc. | Reducing particulate contamination during semiconductor device processing |
US5286337A (en) * | 1993-01-25 | 1994-02-15 | North American Philips Corporation | Reactive ion etching or indium tin oxide |
US5350454A (en) * | 1993-02-26 | 1994-09-27 | General Atomics | Plasma processing apparatus for controlling plasma constituents using neutral and plasma sound waves |
CH687986A5 (de) * | 1993-05-03 | 1997-04-15 | Balzers Hochvakuum | Plasmabehandlungsanlage und Verfahren zu deren Betrieb. |
CH687987A5 (de) * | 1993-05-03 | 1997-04-15 | Balzers Hochvakuum | Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer. |
US5456796A (en) * | 1993-06-02 | 1995-10-10 | Applied Materials, Inc. | Control of particle generation within a reaction chamber |
-
1993
- 1993-05-03 CH CH01344/93A patent/CH687987A5/de not_active IP Right Cessation
-
1994
- 1994-04-14 DE DE4447977A patent/DE4447977B4/de not_active Expired - Lifetime
- 1994-04-14 DE DE4412902A patent/DE4412902B4/de not_active Expired - Lifetime
- 1994-05-02 FR FR9405316A patent/FR2705104B1/fr not_active Expired - Lifetime
- 1994-05-03 US US08/237,432 patent/US5693238A/en not_active Expired - Lifetime
- 1994-05-06 JP JP09437594A patent/JP3683599B2/ja not_active Expired - Lifetime
-
1999
- 1999-08-24 US US09/379,742 patent/US6533534B2/en not_active Expired - Fee Related
-
2004
- 2004-03-26 JP JP2004093357A patent/JP2004282086A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CH687987A5 (de) | 1997-04-15 |
US20010003272A1 (en) | 2001-06-14 |
JP3683599B2 (ja) | 2005-08-17 |
DE4412902B4 (de) | 2007-02-08 |
FR2705104A1 (fr) | 1994-11-18 |
JPH06346245A (ja) | 1994-12-20 |
US5693238A (en) | 1997-12-02 |
DE4412902A1 (de) | 1994-11-10 |
US6533534B2 (en) | 2003-03-18 |
DE4447977B4 (de) | 2009-09-10 |
JP2004282086A (ja) | 2004-10-07 |
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