JPS565977A - Automatic evaporation apparatus - Google Patents

Automatic evaporation apparatus

Info

Publication number
JPS565977A
JPS565977A JP8135379A JP8135379A JPS565977A JP S565977 A JPS565977 A JP S565977A JP 8135379 A JP8135379 A JP 8135379A JP 8135379 A JP8135379 A JP 8135379A JP S565977 A JPS565977 A JP S565977A
Authority
JP
Japan
Prior art keywords
chamber
vacuum
evaporation
wafer jig
preliminary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8135379A
Other languages
Japanese (ja)
Inventor
Akihiko Sato
Soichiro Nakamura
Kinya Sugimoto
Yukio Murakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi High Tech Corp
Original Assignee
Hitachi Ltd
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Ltd
Priority to JP8135379A priority Critical patent/JPS565977A/en
Publication of JPS565977A publication Critical patent/JPS565977A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To decrease the operating cycle time and to prevent the pollution of the evaporated material, by installing a preliminary vacuum chamber on one side, or one chamber on each of both sides, of a vacuum evaporation chamber through gate valves, and by closing tightly both the chambers separately or connectedly, and by installing a transferring means for wafer jigs from one chamber to another. CONSTITUTION:A wafer jig 1 mounted with plural wafers 2 is set in the first preliminary vacuum chamber 12, and the chamber 12 is evacuated to a vacuum by a vacuum pump 4. The wafers 2 are preliminarily heated by a heater 9 while the wafer jig 1 is rotated and revolved by a driving shaft 21, then the wafer jig is moved in vacuum by opening the gate valve 14 equipped between the preliminary chamber 12 and the vacuum evaporation chamber 3 which is at a high vacuum. After that the gate valve 14 is closed, a gate 5 is opened, and the wafer jig 1 is set in the vacuum evaporation chamber, where evaporation source 7 is evaporated by electron beams to conduct evaporation metallizing while the wafer jig 1 being rotated and revolved by the driving shaft 21. Subsequently, a gate valve 15 is opend, and the wafer jig 1 is transferred to the second preliminary vacuum chamber 13, and is taken out to the outside. In a small chamber of the vacuum evaporation chamber is set a measuring means for evaporation quantity composed of a quartz vibrator.
JP8135379A 1979-06-29 1979-06-29 Automatic evaporation apparatus Pending JPS565977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8135379A JPS565977A (en) 1979-06-29 1979-06-29 Automatic evaporation apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8135379A JPS565977A (en) 1979-06-29 1979-06-29 Automatic evaporation apparatus

Publications (1)

Publication Number Publication Date
JPS565977A true JPS565977A (en) 1981-01-22

Family

ID=13743987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8135379A Pending JPS565977A (en) 1979-06-29 1979-06-29 Automatic evaporation apparatus

Country Status (1)

Country Link
JP (1) JPS565977A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6533534B2 (en) * 1993-05-03 2003-03-18 Unaxis Balzers Aktiengesellschaft Method for improving the rate of a plasma enhanced vacuum treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6533534B2 (en) * 1993-05-03 2003-03-18 Unaxis Balzers Aktiengesellschaft Method for improving the rate of a plasma enhanced vacuum treatment

Similar Documents

Publication Publication Date Title
JPH01163951A (en) Vacuum device
KR920022398A (en) Decompression Treatment System and Decompression Treatment Method
JPS565977A (en) Automatic evaporation apparatus
RU192228U1 (en) VACUUM INSTALLATION FOR APPLICATION OF THIN FILM COATINGS ON THE SUBSTRATE
US4911815A (en) Sputtering apparatus for production of thin films of magnetic materials
JPS639586B2 (en)
JPH03207860A (en) Vacuum deposition device for continuous film formation
JPS5549136A (en) Continuous working apparatus during pressure reduction
JPH0375631B2 (en)
JPS5519842A (en) Thin film growing device under vacuum
US4733746A (en) Vacuum treating method and apparatus
JPS60102744A (en) Vacuum treater
JPS63307273A (en) Apparatus for sputtering thin layer to substrate
JPH0324274A (en) Vapor phase growing device
JPS6449229A (en) Electron beam aligner
JPS60115227A (en) Plasma processing method and apparatus for the same
JPH04183863A (en) Base plate treating device
JPS6293379A (en) Deposited film forming device
KR200148603Y1 (en) A coating apparatus of wafer
TWM590156U (en) Vacuum plant for applying thin-film coatings
KR200183770Y1 (en) Nitrogen purge device for dry etching device
JPS59208067A (en) Holder for base plate
JPH01127666A (en) Vacuum film-forming apparatus
JPH0823066B2 (en) Ion implanter
JPS6465255A (en) Film forming device