JPH0823066B2 - Ion implanter - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to an ion implantation apparatus that implants ions into a sample in a vacuum, and particularly to ion implantation with a focus on diversity of processing contents rather than mass productivity. Regarding the device.

[Conventional technology]

An example of a conventional ion implanter of this type is shown in FIG.

A polyhedral rotating table 6 is housed in an implantation chamber 4 into which the ion beam 2 is scanned and introduced while being evacuated by a vacuum evacuation device (not shown). Samples such as integrated circuits 12
Holders 8 for holding the heaters 10 each having a built-in heater 10 are attached.

At the time of processing, after mounting the sample 12 on the holder 8 and evacuating the inside of the injection chamber 4, for example, the sample 12 is heated to a high temperature (for example, about 700 ° C.) by the heater 10, and the ion beam 2 is moved to a predetermined position. The sample 12 is irradiated and ions are implanted.

In that case, ions can be sequentially implanted into each sample 12 by rotating the rotating table 6 by a predetermined angle.
Further, the replacement of the sample 12 is performed with the injection chamber 4 in the atmospheric pressure state.

[Problems to be solved by the invention]

With respect to this type of ion implantation apparatus, there is a growing need in recent years to diversify the processing contents. For example, a so-called high temperature holder 8 having a heater 10 for heating a sample as described above is used in association with ion implantation. Although there is a demand for providing a so-called room temperature holder having a cooling means for suppressing the heating of the sample 12, in the conventional apparatus as described above, a high temperature holder and a room temperature holder are provided on the same rotary table 6. When they are provided side by side, there is a problem in that it is difficult to achieve the desired temperature by mutual thermal interference.

Further, in the above-described device, in order to replace the sample 12, it is necessary to bring the inside of the injection chamber 4 into the atmospheric pressure state and then to bring it into a vacuum state again, so that it takes a lot of time to evacuate. There is also the problem of low efficiency.

Further, in order to change the ion implantation angle with respect to the sample 12, it is necessary to replace it with a holder 8 having an inclination according to the implantation angle. Moreover, the replacement can be performed only when the inside of the implantation chamber 4 is in the atmospheric pressure state. It is less frequent and very troublesome.

Then, this invention aims at providing the ion implantation apparatus which improved these points.

[Means for solving problems]

The ion implantation apparatus of the present invention is a chamber for introducing an ion beam into which ions are implanted in a sample and is evacuated, and is adjacent to both sides of the implantation chamber via a partitioning valve. A chamber for loading and unloading the sample between the injection chamber and the atmosphere, which is evacuated, and first and second auxiliary chambers for holding the sample and having means for heating the sample. No. 1 holder, a second holder for holding a sample and having a cooling means for the sample, and the first holder from outside the first preliminary chamber are rotated between an upright state and an inverted state. At the same time, the first operating mechanism for moving between the spare chamber and the injection chamber through the valve in the open state, and the second holder from the outside of the second spare chamber are rotated between the upright state and the inverted state. Along with the opening of the spare room and the injection room Characterized in that it comprises a second operating mechanism for moving through the valve in the state.

〔Example〕

FIG. 1 is a schematic cross-sectional view partially showing an ion implanter according to an embodiment of the present invention.

An implantation chamber in which the ion beam 2 is, for example, scanned and introduced while being evacuated by a vacuum exhaust device (not shown)
First and second preparatory chambers (also referred to as airlock chambers) 16a and 16b are adjacent to the left and right sides of 14 via partition valves 18a and 18b, respectively.

When the valves 18a, 18b are in the open state, holders 24a, 24b, etc., on which the sample 12 described later is mounted, can pass therethrough.

The preliminary chambers 16a and 16b are chambers for loading and unloading the sample 12 between the injection chamber 14 and the atmosphere, and are evacuated by a vacuum exhaust device (not shown). Sample 12
It has doors 22a and 22b for loading and unloading, respectively.

In addition, in the spare chambers 16a and 16b, there is an O-ring for vacuum sealing.
Shafts 30a and 30b are respectively inserted through bearing portions 34a and 34b having 36, and first and second holders 24a and 24b for holding the sample 12 are provided at the vacuum side ends of the shafts 30a and 30b, respectively.
Operating handles 32a and 32b are attached to the ends on the atmosphere side, respectively. And by these, each spare room 16
Each of the holders 24a and 24b is rotated from the outside of a and 16b between an upright state (for example, a vertical state) and a tilted state (for example, a horizontal state), and the holders 24a and 24b are in a vertical state.
The first and second operating mechanisms for moving between the prechambers 16a, 16b and the injection chamber 14 through the valves 18a, 18b in the open state are configured.

The holder 24a is a so-called high temperature holder, and
A heater 26 is built in as a heating means of the. Holder 24b
Is a so-called room temperature holder, and has a cooling pipe 28 through which a refrigerant such as Freon is passed as a cooling means for the sample 12. Although not shown, the heater 26 and the cooling pipe 28 are connected to the outside through the shafts 30a and 30b, respectively.

For example, the case of implanting ions into the sample 12 using the holder 24a for high temperature will be described.
6a to a horizontal position, valve 18a closed and prechamber 1
Set the inside of 6a to atmospheric pressure, open the door 22a, and hold the sample 12 in the holder 2
Attach to 4a. After that, the door 22a is closed, the preliminary chamber 16a is evacuated, the holder 24a is set in the vertical state, and the valve 18a is opened to a predetermined position in the injection chamber 14 in the vacuum state.
Move 24a. Then, in a state where the sample 12 is heated to a high temperature by the heater 26, the sample 12 is irradiated with the ion beam 2 for ion implantation.

The sample 12 after the ion implantation is taken out and replaced with a new one by an operation almost opposite to the above.

When ion implantation is performed by using the holder 24b for room temperature instead of the holder 24a, almost the same as above.

As described above, in this ion implantation apparatus, since the holder 24a for high temperature and the holder 24b for room temperature are provided independently of each other, there is no risk of thermal interference with each other, and each desired temperature can be easily realized. can do.

Further, since the preparatory chambers 16a and 16b which are independent from each other are provided, when the sample 12 is mounted or exchanged in the holder 24a or 24b, the inside of the injection chamber 14 may be kept in a high vacuum state without being brought into an atmospheric pressure state. Since it is possible to mount the sample 12 on the other holder while performing ion implantation using one holder and evacuate the preliminary chamber, it is possible to process many samples 12 efficiently. it can.

Also, the ion implantation sensitivity for the sample 12 is
It can be easily changed by rotating 30a and 30b.

〔The invention's effect〕

As described above, the ion implantation apparatus according to the present invention has the holder for high temperature and the holder for room temperature which are independent from each other, and moreover, the ion implantation angle for the sample on each holder can be easily changed. The processing content can be more versatile.

Moreover, since the auxiliary chambers are independent from each other and it is not necessary to bring the injection chamber into the atmospheric pressure state when exchanging the sample, it is possible to perform the processing efficiently.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view partially showing an ion implanter according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view partially showing an example of a conventional ion implantation apparatus. 2 …… ion beam, 12 …… sample, 14 …… injection chamber, 16a,
16b …… Spare room, 18a, 18b …… Valve, 24a, 24b …… Holder, 2
6 …… Heater, 28 …… Cooling pipe, 30a, 30b …… Axis.

Claims (1)

[Claims] 1. A chamber for injecting ions into a sample by introducing an ion beam, which is evacuated and is adjacent to both sides of the chamber by a partitioning valve, and the sample chamber First and second preliminary chambers for evacuation and evacuation between the injection chamber and the atmosphere, and a first holder for holding a sample and having heating means for the sample And a second holder for holding the sample and having a cooling means for the sample, and rotating the first holder from the outside of the first spare chamber between the upright state and the inverted state, and A first operating mechanism for moving the chamber between the chamber and the injection chamber through the valve in the open state, and rotating the second holder from the outside of the second auxiliary chamber between the upright state and the inverted state, and Open the valve between the chamber and the injection chamber. Ion implantation apparatus characterized by comprising a second operating mechanism for moving Te.