JPH07258839A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPH07258839A JPH07258839A JP4825594A JP4825594A JPH07258839A JP H07258839 A JPH07258839 A JP H07258839A JP 4825594 A JP4825594 A JP 4825594A JP 4825594 A JP4825594 A JP 4825594A JP H07258839 A JPH07258839 A JP H07258839A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chamber
- target electrode
- sputtering
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はスパッタリング装置に係
り、特に、ターゲット電極をスパッタリングすることに
より飛散したスパッタ粒子を基板に堆積させて成膜する
スパッタリング装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus, and more particularly to a sputtering apparatus for depositing sputtered particles scattered by sputtering a target electrode on a substrate to form a film.
【０００２】[0002]
【従来の技術】スパッタリング装置は、種々の材料の薄
膜化手段の一つとして、各方面で利用されている。2. Description of the Related Art Sputtering apparatuses are used in various fields as one of means for thinning various materials.
【０００３】このスパッタリング装置によるスパッタリ
ング法は、１０-1〜１０-4Torr程度の真空中でアルゴン
等のガスを放電させて、この時に生じたイオンでターゲ
ットをスパッタリングし、これにより飛散したスパッタ
粒子をターゲットに対面した位置に配置されている基板
上に堆積させて薄膜を形成する方法である。In the sputtering method using this sputtering apparatus, a gas such as argon is discharged in a vacuum of about 10 -1 to 10 -4 Torr, a target is sputtered by the ions generated at this time, and the sputtered particles scattered by this. Is deposited on a substrate placed at a position facing the target to form a thin film.
【０００４】この方法を用いたスパッタリング装置は、
用途に応じて様々なタイプが考えられ、実用化されてい
る。バッチ式スパッタリング装置では、基板の処理が終
了するごとにチャンバーを開放するために、真空排気の
時間がかかるが、量産用装置ではそのために一度にセッ
トする基板の枚数を増やすことで、その生産性を上げて
いる。A sputtering apparatus using this method is
Various types are considered and put into practical use according to the application. In a batch-type sputtering system, it takes time to evacuate the chamber to open the chamber each time the substrate processing is completed, but in a mass production system, the productivity can be increased by increasing the number of substrates set at one time. Is raised.
【０００５】従って、通常、基板の成膜面を下向きにし
て、下方からターゲット粒子を上向きに飛散させて成膜
するいわゆるスパッタアップ方式が膜中異物の低減にと
っては有利であることがわかっていても、基板のセット
のしやすさから、基板の成膜面を上向きにして、上方か
らターゲット粒子を下向きに飛散させて成膜するいわゆ
るスパッタダウン方式にすることが多い。また、基板と
ターゲットをそれぞれ垂直にして成膜するサイドスパッ
タにおいても、基板のセットは基板電極が垂直状態のま
ま行っている。Therefore, it is generally known that the so-called sputter-up method, in which the film-forming surface of the substrate faces downward and the target particles are scattered upward from below, is advantageous for reducing foreign matter in the film. However, in order to easily set the substrate, a so-called sputter down method is often used in which the film-forming surface of the substrate faces upward and target particles are scattered downward from above to form a film. Further, also in the side sputtering in which the substrate and the target are vertically formed, the substrate is set while the substrate electrode is in the vertical state.
【０００６】また、成膜室を基板の出し入れのたびに大
気に開放することなく、基板の仕込み、取り出しの部屋
の他、機能ごとに部屋を別々に設け、それぞれの部屋間
を基板を移動させる機能を設けて、成膜室を常に高真空
に保ちながら処理を続けてゆく、インライン式スパッタ
リング装置においては、ほとんどの場合、スパッタアッ
プ方式かサイドスパッタ方式のいずれかを採用してい
る。この場合には、基板搬送治具にセットする時点で成
膜時の姿勢が決まっている。Further, in addition to the room for loading and unloading the substrate, a room is separately provided for each function and the substrate is moved between the rooms without opening the film forming chamber to the atmosphere each time the substrate is loaded or unloaded. In most cases, the in-line type sputtering apparatus adopts the sputter-up method or the side-sputtering method by providing a function and continuing the processing while always keeping the film forming chamber at a high vacuum. In this case, the attitude at the time of film formation is determined when the film is set on the substrate transfer jig.
【０００７】更に、基板を搬送するロボットを、その内
部に収納している搬送室のまわりに複数の処理室を設
け、基板はロボットにより各処理室を移動していきなが
ら成膜を含めた各処理を受ける枚葉式マルチチャンバー
スパッタリング装置では、ロボットでの基板の搬送方式
からの制約上、基板の裏面を接触させて搬送するため
に、基板の成膜面は上向きとなるスパッタダウン方式を
とらざるを得なかった。Further, a robot for transporting the substrate is provided with a plurality of processing chambers around a transport chamber housed therein, and the substrate is moved in each of the processing chambers by the robot and each substrate including film formation is moved. In the single-wafer multi-chamber sputtering system that receives the processing, due to the restrictions of the robot substrate transfer method, the backside of the substrate is contacted and transferred, so the film formation surface of the substrate faces upward. I had no choice.
【０００８】一方、特開平2−85364号公報では、水平状
態で搬送している基板を真空チャンバー内で成膜前に起
立させてサイドスパッタ方式とすることが提案されてい
るが、これは、基板単独で起立させる場合で、基板を加
熱しながら成膜する場合や基板にバイアス電位を印加し
ながら成膜する必要がある場合または複数の基板に対し
ては考慮されていなかった。またその構造からも明らか
な様に、基板の回転は水平状態から垂直状態に限定され
るものであった。On the other hand, Japanese Patent Application Laid-Open No. 2-85364 proposes a side-sputtering method in which a substrate being conveyed in a horizontal state is erected in a vacuum chamber before film formation. It has not been taken into consideration in the case of raising the substrate alone, the case of forming the film while heating the substrate, the case of requiring the film formation while applying a bias potential to the substrate, or the case of a plurality of substrates. Further, as is clear from the structure, the rotation of the substrate was limited to the vertical state from the horizontal state.
【０００９】[0009]
【発明が解決しようとする課題】成膜装置において、成
膜時の基板の姿勢は重要である。つまり成膜中には目的
とする材料のみが堆積するだけではなく、それ以外の材
料、特に真空チャンバー内部の部品の材料が膜中に混入
することがある。また、材質は目的とする材料であって
もそれがある一定量以上のかたまりとして堆積する様な
場合も、これを異物と称している。これは、基板が上向
きになっている方が当然付着しやすく、出来るだけ成膜
面は下を向いていることが望ましい。しかし、通常スパ
ッタアップ式の装置では、例えば基板を作業者が上向き
に装着するのは、作業がむずかしい。また、枚葉式マル
チチャンバースパッタリング装置等では、真空中でロボ
ットにて基板を搬送するために基板の裏面を保持してお
り、その受け渡しから考えても成膜面を上向きにしたま
まのスパッタダウンにならざるを得ない。In the film forming apparatus, the posture of the substrate during film formation is important. That is, not only the intended material is deposited during film formation, but also other materials, especially materials for components inside the vacuum chamber may be mixed into the film. In addition, even if the material is a target material and it is deposited as a lump of a certain amount or more, this is called a foreign substance. This is because it is easier for the substrate to adhere when the substrate is facing upward, and it is desirable that the film-forming surface is facing downward as much as possible. However, in a sputtering-up type apparatus, it is difficult for an operator to mount the substrate upward, for example. Also, in a single-wafer multi-chamber sputtering device, etc., the back surface of the substrate is held in order to transfer the substrate by a robot in a vacuum. I have no choice but to.
【００１０】上記従来技術では、基板セット時の容易性
と基板成膜時の異物低減のためにサイドスパッタ、又は
スパッタアップ方式とすることの両方を満足するところ
までは考慮されていなかった。特に基板を加熱又は冷却
しながら成膜する場合さらにバイアス電位を印加しなが
ら成膜する様な場合には、基板のセット時の姿勢で成膜
時の姿勢は同じであった。In the above prior art, consideration has not been given to the point that both the side sputtering or the sputter-up method is satisfied for the ease of setting the substrate and the reduction of foreign matter during film formation on the substrate. In particular, when a film is formed while heating or cooling the substrate and further when a film is formed while applying a bias potential, the attitude at the time of film formation is the same as the attitude at the time of setting the substrate.
【００１１】本発明の目的は、作業者の基板セット時の
容易性から水平状態で基板のセットを行いながら、成膜
時には膜中異物低減のために、サイドスパッタあるいは
スパッタアップ方式を可能にするスパッタリング装置を
提供することにあり、これは枚葉式マルチチャンバース
パッタリング装置においても、基板搬送ロボットの制約
上、基板の水平搬送、スパッタダウン方式を採用せざる
を得なかった場合に対して、成膜時のサイドスパッタあ
るいはスパッタアップ方式を可能とする。An object of the present invention is to enable a side sputtering or a spatter-up method to reduce foreign matters in a film during film formation while setting a substrate in a horizontal state for ease of setting a substrate by an operator. The purpose of this is to provide a sputtering apparatus.This is also applicable to a single-wafer multi-chamber sputtering apparatus, in which the horizontal transfer of the substrate and the sputtering down method have to be adopted due to the restriction of the substrate transfer robot. Enables side sputtering or sputtering up method during film formation.
【００１２】[0012]
【課題を解決するための手段】上記目的を達成するため
に、基板を保持する基板電極をアース電位に対して絶縁
した状態で保持しながら移動できる構造とし、かつ、基
板電極をある所定の位置で例えば９０度回転させて垂直
状態にしたり、１８０度回転させて完全に基板の向きを
変える等の回転機構を設ける。また、基板電極ごと移動
させるために、成膜時に基板の加熱，冷却、あるいはバ
イアスの印加ができる様に、電気的、及び冷却水の接続
が自動で行える構造としている。In order to achieve the above object, the structure is such that the substrate electrode for holding the substrate can be moved while being held in a state of being insulated from the ground potential, and the substrate electrode is at a predetermined position. Thus, for example, a rotating mechanism is provided for rotating the substrate 90 degrees to make it vertical, or rotating it 180 degrees to completely change the orientation of the substrate. In addition, in order to move the substrate electrode together, the structure is such that electrical and cooling water can be automatically connected so that the substrate can be heated, cooled, or a bias can be applied during film formation.
【００１３】さらに、基板は基板電極に保持されたまま
の状態で回転されるために、基板落下防止のために、そ
の周辺を１〜２mm程度押さえる機構を設けている。そし
てこの機構は、例えば真空中でロボットにより基板の受
け渡しをする様な場合には、この押さえ機構は動かすこ
とが出来る構造としている。Further, since the substrate is rotated while being held by the substrate electrode, a mechanism for holding the periphery thereof by about 1 to 2 mm is provided to prevent the substrate from falling. This mechanism has a structure in which the holding mechanism can be moved when the substrate is transferred by a robot in a vacuum, for example.
【００１４】真空中で基板電極に基板をセットする様な
場合には、基板の加熱あるいは冷却をより効率良く行う
ために、基板電極自身の加熱あるいは冷却をし、基板裏
面と基板電極表面とのガスにより熱を伝える方式も考え
られる。When the substrate is set on the substrate electrode in a vacuum, the substrate electrode itself is heated or cooled so that the substrate back surface and the substrate electrode front surface are heated or cooled more efficiently. A method of transmitting heat by gas is also conceivable.
【００１５】[0015]
【作用】本発明では、基板セット後の基板電極、あるい
は搬送ロボットによる基板受け取り後の基板電極を、回
転させてサイドスパッタあるいはスパッタアップを可能
とすることによって、従来装置に比べて、飛躍的に膜中
の異物を低減し、生産性の大幅向上につなげることがで
きる。In the present invention, by rotating the substrate electrode after the substrate is set or the substrate electrode after receiving the substrate by the transfer robot, side sputtering or sputtering up can be performed, so that it is dramatically improved as compared with the conventional apparatus. It is possible to reduce foreign substances in the film and significantly improve productivity.
【００１６】[0016]
【実施例】以下、図示した実施例に基づいて本発明を詳
細に説明する。The present invention will be described in detail below with reference to the illustrated embodiments.
【００１７】図１、及び図２は、本発明のバッチ式スパ
ッタリング装置の一実施例を示す縦断面図及び横断面図
である。1 and 2 are a longitudinal sectional view and a lateral sectional view showing an embodiment of a batch type sputtering apparatus of the present invention.
【００１８】該図に示すごとく、成膜室１内に基板プレ
ート４ｂ上に基板ホルダー４ｃにて位置決めされた状態
で、基板４ａがセットされている。基板プレート４ｂ
は、基板電極駆動機構１３と連結されて、回転モータ１
３ａにより水平状態からターゲット１６と対向する位置
までその姿勢を変えることができる。ターゲット１６
は、電極導入部３１と連結された水冷プレート９に固定
され、該電極導入部３１及び水冷プレート９は、絶縁リ
ング１０を介してアースシールド１１で囲まれており、
これらターゲット電極は、真空シールされた状態で成膜
室１に保持されている。As shown in the figure, the substrate 4a is set in the film forming chamber 1 on the substrate plate 4b while being positioned by the substrate holder 4c. Substrate plate 4b
Is connected to the substrate electrode driving mechanism 13 to rotate the rotary motor 1
The posture can be changed from the horizontal state to the position facing the target 16 by 3a. Target 16
Is fixed to the water cooling plate 9 connected to the electrode introducing portion 31, and the electrode introducing portion 31 and the water cooling plate 9 are surrounded by the earth shield 11 via the insulating ring 10.
These target electrodes are held in the film forming chamber 1 in a vacuum-sealed state.
【００１９】さらに、ターゲット電極は、図示されてい
ない駆動機構により矢印３２の方向に平行移動できる構
造になっている。成膜室１は、主排気弁１４を介して取
付けられた主排気ポンプ１５により真空状態に排気され
る。基板の仕込み取り出しは、主排気弁１４を閉じた状
態で成膜室１内を大気状態に戻してカバー３０を開き、
基板プレート４ｂを水平状態にして実施する。Further, the target electrode has a structure capable of moving in parallel in the direction of arrow 32 by a driving mechanism (not shown). The film forming chamber 1 is evacuated to a vacuum state by a main exhaust pump 15 attached via a main exhaust valve 14. To prepare and take out the substrate, the inside of the film forming chamber 1 is returned to the atmospheric state with the main exhaust valve 14 closed, and the cover 30 is opened.
The substrate plate 4b is placed in a horizontal state for implementation.
【００２０】図２に示すように、基板４ａは、複数枚が
基板プレート４ｂ上にセットされることもある。これに
より、基板４ａのセットは作業のしやすい水平状態で行
うことができて、かつ、成膜時には垂直状態とすること
で、基板の異物付着量を大幅に低減することができる。As shown in FIG. 2, a plurality of substrates 4a may be set on the substrate plate 4b. As a result, the substrate 4a can be set in a horizontal state where the work can be easily performed, and by setting the substrate 4a in a vertical state during film formation, the amount of foreign matter attached to the substrate can be significantly reduced.
【００２１】さらに、前記の様に、ターゲット電極は、
基板電極と対向した位置で平行移動できる機構により、
基板とターゲット間の距離を自由に変えることができる
様になり、プロセスの条件出しが容易になると同時に、
プロセスの多様化にも対応することができる。Further, as described above, the target electrode is
By the mechanism that can move in parallel at the position facing the substrate electrode,
It becomes possible to freely change the distance between the substrate and the target, making it easy to set the conditions for the process and
It is possible to cope with diversification of processes.
【００２２】図３は、本発明のロードロック式スパッタ
リング装置の一実施例を示す縦断面図である。FIG. 3 is a vertical sectional view showing an embodiment of the load lock type sputtering apparatus of the present invention.
【００２３】図３に示す様に、成膜室１と仕込室２は、
仕切弁８を介して連結されている。仕込室２の上部のメ
ンテナンスカバー３は図示していない開閉機構により開
閉が自由で、該メンテナンスカバー３が開状態にて基板
のセット、取り出しを行うものとする。As shown in FIG. 3, the film formation chamber 1 and the preparation chamber 2 are
They are connected via a gate valve 8. The maintenance cover 3 on the upper part of the loading chamber 2 can be freely opened and closed by an opening and closing mechanism (not shown), and the substrate is set and taken out while the maintenance cover 3 is open.
【００２４】基板電極４の詳細を図４に示す。該図のご
とく、冷却、及び加熱機構付基板プレート４ｂに基板４
ａはセットされ、基板ホルダー４ｃにて基板４ａはセッ
トされ、基板ホルダー４ｃにて基板４ａの位置が決めら
れる様になっている。基板プレート４ｂは、絶縁リング
４ｄを介してアースシールド４ｅと一緒に固定されてい
る。基板プレート４ｂとアースシールド４ｅは、電気的
に絶縁されている。Details of the substrate electrode 4 are shown in FIG. As shown in the figure, the substrate 4 is attached to the substrate plate 4b with cooling and heating mechanism.
a is set, the substrate 4a is set by the substrate holder 4c, and the position of the substrate 4a is determined by the substrate holder 4c. The substrate plate 4b is fixed together with the earth shield 4e via the insulating ring 4d. The substrate plate 4b and the earth shield 4e are electrically insulated.
【００２５】図１で、基板電極４は、搬送機構５の上に
のせられている。成膜室１と仕込室２には、それぞれ主
排気弁１４及び６を介して、主排気ポンプ１５及び７が
取り付けられており、内部を真空状態に保つことが可能
である。成膜室１と仕込室２のそれぞれが真空状態にあ
る時、仕切弁８を開いて搬送機構５により、基板電極４
を成膜室１に移動させる。成膜室１には、基板電極連結
部１２があるが、基板電極４が成膜室１に移動してくる
時には、干渉しない様に、基板電極駆動機構１３により
下がっている。基板電極４が所定の位置に移動後、仕切
弁８を閉める。そして、基板電極駆動機構１３により、
基板電極４と基板電極連結部１２が連結されると、電
気，冷却水、及び圧空の系統が接続される様になってい
る。基板電極駆動機構１３により、そのままほぼ垂直状
態にまで起こされた基板電極４に対向する位置に、水冷
プレート９上のターゲット１６が、絶縁リング１０を介
して、成膜室１に固定されている。ターゲット１６の周
囲は、アースシールド１１で囲まれている。ターゲッッ
ト１６と基板電極４が対向した状態で、図示していない
ガス導入系で成膜室１にガスを導入しながら、やはり図
示していないスパッタ電源よりターゲット１６にパワー
を投入することにより、スパッタがスタートする。成膜
終了後は、全く逆の手順で基板を取り出すことができ
る。In FIG. 1, the substrate electrode 4 is placed on the transfer mechanism 5. Main exhaust pumps 15 and 7 are attached to the film forming chamber 1 and the preparation chamber 2 via main exhaust valves 14 and 6, respectively, so that the inside can be kept in a vacuum state. When each of the film forming chamber 1 and the charging chamber 2 is in a vacuum state, the gate valve 8 is opened and the transfer mechanism 5 is used to move the substrate electrode 4
Is moved to the film forming chamber 1. The film forming chamber 1 has a substrate electrode connecting portion 12, but when the substrate electrode 4 moves to the film forming chamber 1, it is lowered by a substrate electrode driving mechanism 13 so as not to interfere. After the substrate electrode 4 moves to a predetermined position, the gate valve 8 is closed. Then, by the substrate electrode drive mechanism 13,
When the substrate electrode 4 and the substrate electrode connecting portion 12 are connected, electricity, cooling water, and compressed air systems are connected. The target 16 on the water-cooled plate 9 is fixed to the film forming chamber 1 via the insulating ring 10 at a position facing the substrate electrode 4 raised up to a substantially vertical state by the substrate electrode driving mechanism 13 via the insulating ring 10. . The target 16 is surrounded by the earth shield 11. With the target 16 and the substrate electrode 4 facing each other, a gas is introduced into the film forming chamber 1 by a gas introduction system (not shown), and power is also applied to the target 16 from a sputtering power source (not shown). Will start. After the film formation is completed, the substrate can be taken out in the reverse order.
【００２６】本実施例で基板４ａのセット、取り出しは
水平状態で行うことができて、かつ成膜時はサイドスパ
ッタが可能となる。また、基板電極４の構造により基板
の冷却あるいは加熱、そして成膜中のバイアスの印加も
可能となる。In this embodiment, the substrate 4a can be set and taken out horizontally, and side sputtering can be performed during film formation. Further, the structure of the substrate electrode 4 makes it possible to cool or heat the substrate and apply a bias during film formation.
【００２７】図５に、本発明による他の実施例を示す。FIG. 5 shows another embodiment according to the present invention.
【００２８】該図では、基板ホルダ４ｃは、基板プレー
ト４ｂとは独立に、それ単独で基板４ａを保持すること
ができる。例えば、基板ホルダー４ｃは全体が１０mmの
厚さで、φ７０mmで厚さ２mmの基板を複数枚保持するた
めに、φ７２mmで深さ２mmの溝が基板保持数分だけ加工
されている。仕込室２内で、基板４ａがセットされた基
板ホルダー４ｃは、搬送機構５により、成膜室１内の基
板プレート４ｂの位置まで移動し、基板プレート４ｂ上
に保持される。その後、基板電極連結部１２ごと、図示
していない基板電極駆動機構により、それぞれ、４
ｃ′,４ｂ′,４ｄ′，１２′の位置に移動する。ここ
で、あらかじめ成膜室１に固定されているアースシール
ド４ｅとで、図４に示したと同等の基板電極を構成す
る。その他の機能については、図３の実施例と同等であ
る。In the figure, the substrate holder 4c can hold the substrate 4a independently of the substrate plate 4b. For example, the substrate holder 4c has a total thickness of 10 mm, and in order to hold a plurality of substrates having a diameter of 70 mm and a thickness of 2 mm, grooves having a diameter of 72 mm and a depth of 2 mm are processed by the number of the substrates held. In the charging chamber 2, the substrate holder 4c on which the substrate 4a is set is moved to the position of the substrate plate 4b in the film forming chamber 1 by the transport mechanism 5, and is held on the substrate plate 4b. After that, the substrate electrode connecting portion 12 and the substrate electrode driving mechanism (not shown) respectively
Move to the positions of c ', 4b', 4d ', 12'. Here, the substrate shield equivalent to that shown in FIG. 4 is configured with the earth shield 4e which is fixed in advance in the film forming chamber 1. Other functions are the same as those of the embodiment shown in FIG.
【００２９】図５の実施例では、基板ホルダー４ｃは、
基板プレート４ｂに保持された状態で、回転の下側では
めあい構造となるようにすることによって、回転の時の
落下を防止している。また、基板ホルダー４ｃごと仕込
室２から取り出すことによって、基板ホルダー４ｃを仕
込室２に残したまま、基板４ａの交換をする場合に比べ
て、交換時の仕込室２内の大気開放時間の最小化が可能
となり、仕込室２の再排気時間を大幅に短縮することが
可能となる。In the embodiment of FIG. 5, the substrate holder 4c is
While being held by the substrate plate 4b, a fitting structure is provided on the lower side of the rotation to prevent dropping during rotation. Further, by taking out the substrate holder 4c together with the substrate holder 4c from the preparation chamber 2, the atmosphere release time in the preparation chamber 2 at the time of replacement can be minimized as compared with the case where the substrate 4a is replaced with the substrate holder 4c left in the preparation chamber 2. Therefore, the re-evacuation time of the charging chamber 2 can be significantly shortened.
【００３０】図６に、本発明による他の実施例を示す。FIG. 6 shows another embodiment according to the present invention.
【００３１】該図のごとく、搬送室１００の内部に基板
搬送ロボット６００を備えて、搬送室１００の周りに、
仕込・取出室４００，処理室２００、及び成膜室３００
を備えており、各部屋間、及び大気とは仕切弁５００に
よって仕切られている。成膜室３００内のターゲット電
極７００は、ほぼ垂直状態で保持されており、基板電極
８００は水平状態で基板搬送ロボット６００より基板を
受け取る。これを図７により説明する。As shown in the figure, a substrate transfer robot 600 is provided inside the transfer chamber 100, and the transfer chamber 100 is surrounded by the robot 600.
Loading / unloading chamber 400, processing chamber 200, and film forming chamber 300
The room is separated from each room by the sluice valve 500. The target electrode 700 in the film forming chamber 300 is held in a substantially vertical state, and the substrate electrode 800 receives the substrate from the substrate transfer robot 600 in a horizontal state. This will be described with reference to FIG.
【００３２】図７において、基板搬送ロボット６００よ
り差し出されたガラス基板１０００を一旦ガラス基板支
持具１３００が上昇して受け取った後、基板搬送ロボッ
ト６００は元の位置に戻る。基板支持具１３００が下降
すると同時に、基板押え治具９００が下降して基板１０
００を押える。基板電極８００は、前記基板押え治具９
００他と一緒に、図１で示したと同様の回転機構により
回転するので、基板は落下しないで済む。さらに基板電
極８００は垂直からさらに基板１０００を加熱しながら
成膜する様な場合には、ヒータにより加熱し、ガス流量
調整機構1100により、基板１０００の裏面と基板電極８
００の表面を一定の圧力にすることにより、基板１００
０の加熱を効率良く実施することができる。In FIG. 7, after the glass substrate supporting tool 1300 once raises and receives the glass substrate 1000 delivered from the substrate transport robot 600, the substrate transport robot 600 returns to its original position. At the same time when the substrate support 1300 is lowered, the substrate pressing jig 900 is lowered and the substrate 10
Hold 00. The substrate electrode 800 is the substrate pressing jig 9
00 and others are rotated by the same rotation mechanism as shown in FIG. 1, so that the substrate does not drop. Further, in the case where the substrate electrode 800 is formed while vertically heating the substrate 1000, the substrate electrode 800 is heated by a heater and the gas flow rate adjusting mechanism 1100 is used to form the back surface of the substrate 1000 and the substrate electrode 8.
Substrate 100 by applying a constant pressure to the surface of substrate 100.
The heating of 0 can be performed efficiently.
【００３３】本実施例では、基板電極の回転の支点は、
基板の可動範囲より必ず下側にくる様に設置することに
よって、基板電極駆動時の発生異物についても、考慮し
ている。In this embodiment, the fulcrum of rotation of the substrate electrode is
By installing the substrate so that it is always below the movable range of the substrate, foreign matter generated when the substrate electrode is driven is also taken into consideration.
【００３４】さらに、図８に他の実施例を示す。Further, another embodiment is shown in FIG.
【００３５】該図に示す実施例では、成膜室１内で、基
板プレート８００上に基板１０００が保持されている。
基板１０００の受け渡しは、一例として、図７で示した
様なケースが考えられる。基板プレート８００には、基
板プレートケース８０１、及び基板プレート支持部８０
５、及び成膜室１の外部で接続中継部８０６を介して、
電気，冷却水等が接続されている。基板プレート８００
及び基板１０００は、基板プレート支持部８０５に対し
て、回転モータ８０２で任意の向きに回転できる。In the embodiment shown in the figure, the substrate 1000 is held on the substrate plate 800 in the film forming chamber 1.
As an example of the delivery of the substrate 1000, the case as shown in FIG. 7 can be considered. The substrate plate 800 includes a substrate plate case 801, and a substrate plate supporting portion 80.
5, and outside the film formation chamber 1 via the connection relay unit 806,
Electricity, cooling water, etc. are connected. Substrate plate 800
The substrate 1000 can be rotated in any direction by the rotation motor 802 with respect to the substrate plate supporting portion 805.
【００３６】さらに、基板プレート８００，基板プレー
ト支持部８０５、及び回転モータ８０２は、基板プレー
ト駆動ガイド８０７によって駆動モータ８０３にて平行
移動が可能となる。移動部分全体と固定側成膜室１と
は、ベローズ８０４にて連結されて、内部は常に真空が
保持される様になっている。Further, the substrate plate 800, the substrate plate supporting portion 805, and the rotary motor 802 can be moved in parallel by the drive motor 803 by the substrate plate drive guide 807. The whole moving part and the fixed-side film forming chamber 1 are connected by a bellows 804 so that a vacuum is always maintained inside.
【００３７】これにより、基板のセット、あるいは搬送
系との基板の受け渡し時の姿勢と成膜時の姿勢は全く独
立に選択可能となり、かつ、基板とターゲット間の距離
も自由に変えることが可能となる。As a result, the posture of the substrate set or the posture of the transfer of the substrate to the transfer system and the posture of the film formation can be selected completely independently, and the distance between the substrate and the target can be freely changed. Becomes
【００３８】図９では、基板プレート８００を回転させ
て下向きにして、上向きのターゲット１６と対向させて
成膜するスパッタアップの実施例を示している。FIG. 9 shows an example of sputtering up in which the substrate plate 800 is rotated to face downward and face the upward facing target 16 to form a film.
【００３９】[0039]
【発明の効果】以上説明した本発明によれば、基板セッ
ト時の作業性を悪くすることはなく、サイドスパッタリ
ング、又はスパッタアップが可能となるので、従来装置
に比べて生産性が向上するし、また、膜中異物の大幅低
減が可能となり、膜質の飛躍的な向上が期待でき、更
に、製品の歩留りの大幅向上が期待できる。According to the present invention described above, side sputtering or sputtering up can be performed without deteriorating the workability at the time of setting the substrate, so that the productivity is improved as compared with the conventional apparatus. In addition, foreign substances in the film can be significantly reduced, and the film quality can be expected to be dramatically improved, and further, the product yield can be expected to be greatly improved.
【００４０】また、枚葉式マルチチャンバースパッタリ
ング装置においてもサイドスパッタ又はスパッタアップ
が可能となるので、膜中異物の大幅低減による膜質の改
善、製品の歩留り向上が図れ、そして、従来の枚葉式で
は異物の件で採用できなかった材料、又はプロセスにも
適応が可能となるので、枚葉式マルチチャンバースパッ
タリング装置の応用範囲の拡大が見込める。Further, even in the single-wafer multi-chamber sputtering apparatus, side sputtering or sputtering up can be performed, so that the film quality can be improved by greatly reducing foreign matters in the film and the product yield can be improved. Since it will be possible to adapt to materials or processes that could not be adopted due to foreign matter, the application range of single-wafer multi-chamber sputtering equipment can be expected to expand.
【図１】本発明の一実施例を示すバッチ式スパッタリン
グ装置の縦断面図である。FIG. 1 is a vertical sectional view of a batch type sputtering apparatus showing an embodiment of the present invention.
【図２】本発明の一実施例を示すバッチ式スパッタリン
グ装置の横断面図である。FIG. 2 is a cross-sectional view of a batch type sputtering apparatus showing an embodiment of the present invention.
【図３】本発明の一実施例を示すロードロック式スパッ
タリング装置の縦断面図である。FIG. 3 is a vertical sectional view of a load-lock type sputtering apparatus showing an embodiment of the present invention.
【図４】図４に採用される基板電極の詳細を示す断面図
である。FIG. 4 is a cross-sectional view showing details of a substrate electrode adopted in FIG.
【図５】本発明の他の一実施例を示すロードロック式ス
パッタリング装置の縦断面図である。FIG. 5 is a vertical sectional view of a load-lock type sputtering apparatus showing another embodiment of the present invention.
【図６】本発明の一実施例を枚葉式マルチチャンバース
パッタリング装置へ適用した例を示す図である。FIG. 6 is a diagram showing an example in which one embodiment of the present invention is applied to a single-wafer multi-chamber sputtering apparatus.
【図７】図６に示した枚葉式マルチチャンバースパッタ
リング装置に採用した基板電極の詳細を示す図である。7 is a diagram showing details of a substrate electrode used in the single-wafer multi-chamber sputtering apparatus shown in FIG.
【図８】本発明の他の実施例を示す基板電極の縦断面図
である。FIG. 8 is a vertical cross-sectional view of a substrate electrode showing another embodiment of the present invention.
【図９】本発明の更に他の実施例を示すスパッタリング
装置の縦断面図である。FIG. 9 is a vertical sectional view of a sputtering apparatus showing still another embodiment of the present invention.
１…成膜室、２…仕込室、４…基板電極、４ａ…基板、
４ｂ…基板プレート、４ｃ…基板ホルダー、４ｄ，１０
…絶縁リング、４ｅ，１１…アースシールド、６，１４
…主排気弁、５…搬送機構、７，１５…主排気ポンプ、
８…仕切弁、９…水冷プレート、１２…基板電極連結
部、１３…基板電極駆動機構、１３ａ…回転モータ、１
６…ターゲット、３１…電極導入部。1 ... Film forming chamber, 2 ... Preparation chamber, 4 ... Substrate electrode, 4a ... Substrate,
4b ... Substrate plate, 4c ... Substrate holder, 4d, 10
... Insulation ring, 4e, 11 ... Earth shield, 6, 14
... Main exhaust valve, 5 ... Transport mechanism, 7,15 ... Main exhaust pump,
8 ... Gate valve, 9 ... Water cooling plate, 12 ... Substrate electrode connection part, 13 ... Substrate electrode drive mechanism, 13a ... Rotation motor, 1
6 ... Target, 31 ... Electrode introducing part.
Claims (9)
ーゲット電極と、該ターゲット電極と対向する位置に配
置され、該ターゲット電極をスパッタリングすることに
より飛散したスパッタ粒子が堆積されて成膜される基板
とを備えたスパッタリング装置において、 前記基板は、冷却及び加熱機構付き基板プレートにセッ
トされて基板ホルダーに保持され、この状態で該基板を
水平状態から前記ターゲット電極と対向する位置に姿勢
を変える駆動機構を有していることを特徴とするスパッ
タリング装置。1. A vacuum container, a target electrode arranged in the vacuum container, and a target electrode arranged in a position facing the target electrode. Sputtered particles scattered by sputtering the target electrode are deposited to form a film. In the sputtering apparatus provided with the substrate, the substrate is set on a substrate plate with a cooling and heating mechanism and held by a substrate holder, and in this state, the substrate is positioned from a horizontal state to a position facing the target electrode. A sputtering apparatus having a drive mechanism for changing the temperature.
板電極駆動機構と連結された回転モータとで構成されて
いることを特徴とする請求項１記載のスパッタリング装
置。2. The sputtering apparatus according to claim 1, wherein the drive mechanism includes a substrate electrode mechanism and a rotary motor connected to the substrate electrode drive mechanism.
された水冷プレートに固定され、該電極導入部及び水冷
プレートは絶縁リングを介してアースシールドで囲ま
れ、かつ、該ターゲット電極が水平方向に移動できる駆
動機構を備えていることを特徴とする請求項１記載のス
パッタリング装置。3. The target electrode is fixed to a water cooling plate connected to an electrode introducing portion, the electrode introducing portion and the water cooling plate are surrounded by an earth shield via an insulating ring, and the target electrode is horizontally oriented. The sputtering apparatus according to claim 1, further comprising a drive mechanism that is movable to the inside.
ーゲット電極と、該ターゲット電極と対向する位置に配
置され、該ターゲットをスパッタリングすることにより
飛散したスパッタ粒子が堆積されて成膜される基板とを
備えたスパッタリング装置において、 前記ターゲット電極を前記基板と対向する位置に姿勢を
変える駆動機構を備えていることを特徴とするスパッタ
リング装置。4. A vacuum container, a target electrode arranged inside the vacuum container, and a position facing the target electrode. Sputtered particles scattered by sputtering the target are deposited to form a film. A sputtering apparatus including a substrate, the driving apparatus changing a posture of the target electrode to a position facing the substrate.
ーゲット電極とを備え、前記真空容器とは、真空的には
独立させることができる仕切弁を介して連結され、その
内部で少なくとも基板の仕込み、取り出しを行う専用の
ロードロック室を設けて、前記真空容器内で、前記ター
ゲットをスパッタリングして飛散したスパッタ粒子をタ
ーゲット電極と対向する位置にある基板に堆積させて成
膜するスパッタリング装置において、 前記基板は、冷却及び加熱機構付き基板プレートにセッ
トされて基板ホルダーに保持され、この状態で該基板を
水平状態から前記ターゲット電極と対向する位置に姿勢
を変える駆動機構を有していることを特徴とするスパッ
タリング装置。5. A vacuum container, and a target electrode arranged in the vacuum container, the vacuum container being connected via a sluice valve that can be made independent in terms of vacuum, and at least inside thereof. Sputtering is performed by providing a dedicated load lock chamber for loading and unloading the substrate, and depositing sputtered particles, which are generated by sputtering the target in the vacuum container, on the substrate at a position facing the target electrode. In the apparatus, the substrate is set on a substrate plate with a cooling and heating mechanism and is held by a substrate holder, and in this state, the substrate has a drive mechanism that changes the posture from a horizontal state to a position facing the target electrode. A sputtering device characterized by being
れており、かつ、冷却及び加熱機構付き基板プレートに
セットされて基板ホルダーに保持されると共に前記、基
板プレートが絶縁リングを介して電気的に絶縁されてア
ースシールドに固定されている基板を、搬送時には前記
仕込み室内で搬送機構上に水平状態に保持し、前記成膜
室と仕込み室のそれぞれが真空状態にある時に前記仕切
弁を開放して前記成膜室内に移動させ、該基板が所定の
位置に移動した後に前記仕切弁を閉じ、該成膜室内に
は、前記基板が移動して所定に位置にきたら電気，冷却
等の系統と接続される基板電極連結部があり、該基板電
極連結部と前記基板が水平状態で連結され、この状態で
該基板を前記ターゲット電極と対向する位置に姿勢を変
える駆動機構を有していることを特徴とするスパッタリ
ング装置。6. A film forming chamber and a charging chamber are connected via a sluice valve, and are set on a substrate plate with a cooling and heating mechanism and held by a substrate holder, and the substrate plate has an insulating ring. The substrate electrically insulated via the substrate and fixed to the earth shield is held horizontally on the transfer mechanism in the charging chamber during transfer, and the substrate is charged when each of the film forming chamber and the charging chamber is in a vacuum state. When the gate valve is opened and moved to the film forming chamber, the gate valve is closed after the substrate is moved to a predetermined position, and when the substrate is moved to the predetermined position in the film forming chamber, electricity, There is a substrate electrode connecting portion that is connected to a system such as cooling, and the substrate electrode connecting portion and the substrate are connected in a horizontal state, and in this state, a drive mechanism that changes the posture to a position facing the target electrode is provided. Have Sputtering apparatus characterized by there.
ーゲット電極とを備え、前記真空容器とは、真空的には
独立させることができる仕切弁を介して連結され、その
内部で少なくとも基板の仕込み、取り出しを行う専用の
ロードロック室を設けて、前記真空容器内で、前記ター
ゲット電極をスパッタリングして飛散したスパッタ粒子
をターゲット電極と対向する位置にある基板に堆積させ
て成膜するスパッタリング装置において、 前記ターゲット電極を前記基板と対向する位置に姿勢を
変える駆動機構を前記成膜内に備えていることを特徴と
するスパッタリング装置。7. A vacuum container and a target electrode arranged in the vacuum container, the vacuum container being connected via a sluice valve that can be made vacuum independent, and at least inside thereof. A dedicated load lock chamber for loading and unloading the substrate is provided, and the sputtered particles scattered by sputtering the target electrode in the vacuum container are deposited on the substrate at a position facing the target electrode to form a film. In the sputtering apparatus, a drive mechanism that changes the posture of the target electrode to a position facing the substrate is provided in the film formation.
を備え、前記基板搬送室内に基板搬送ロボットを有して
いる枚葉式マルチチャンバスパッタリング装置におい
て、 前記成膜室内に、水平状態にある基板をターゲット電極
と対向する位置にその姿勢を変えることができる駆動機
構を設けたことを特徴とするスパッタリング装置。8. A single-wafer multi-chamber sputtering apparatus comprising a substrate transfer chamber and at least one processing chamber, and having a substrate transfer robot in the substrate transfer chamber, wherein the film formation chamber is horizontally placed. A sputtering apparatus comprising a drive mechanism capable of changing the posture of a substrate facing a target electrode.
を行う部屋と、基板の取り出しを行う部屋とを少なくと
も備え、前記基板、又は基板保持具ごと搬送する搬送機
構を有するインライン式スパッタリング装置において、 前記成膜室内に、水平状態にある基板をターゲット電極
と対向する位置にその姿勢を変えることができる駆動機
構を設けたことを特徴とするスパッタリング装置。9. An in-line type sputtering apparatus comprising at least one film forming chamber, a chamber for preparing a substrate, and a chamber for taking out a substrate and having a transport mechanism for transporting the substrate or the substrate holder. 2. The sputtering apparatus, wherein a drive mechanism capable of changing a posture of the substrate in a horizontal state at a position facing the target electrode is provided in the film forming chamber.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4825594A JPH07258839A (en) | 1994-03-18 | 1994-03-18 | Sputtering device |
| DE1995109440 DE19509440A1 (en) | 1994-03-18 | 1995-03-16 | Sputter coating appts. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4825594A JPH07258839A (en) | 1994-03-18 | 1994-03-18 | Sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07258839A true JPH07258839A (en) | 1995-10-09 |
Family
ID=12798345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4825594A Pending JPH07258839A (en) | 1994-03-18 | 1994-03-18 | Sputtering device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH07258839A (en) |
| DE (1) | DE19509440A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010143371A1 (en) * | 2009-06-08 | 2010-12-16 | キヤノンアネルバ株式会社 | Vacuum processing apparatus and method for manufacturing optical component |
| CN102796998A (en) * | 2012-07-31 | 2012-11-28 | 桂林电子科技大学 | Method for operating and controlling position of nano-grating deposition substrate in vacuum vessel and device therefor |
| KR101372359B1 (en) * | 2011-12-19 | 2014-03-13 | 주식회사 테스 | Sputtering apparatus |
| KR20170134743A (en) * | 2015-04-15 | 2017-12-06 | 가부시키가이샤 알박 | Substrate holding mechanism, film forming apparatus, and substrate holding method |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9722650D0 (en) * | 1997-10-24 | 1997-12-24 | Univ Nanyang | Cathode ARC source with target feeding apparatus |
| JP4393897B2 (en) | 2004-03-12 | 2010-01-06 | 新明和工業株式会社 | Deposition equipment |
| EP1628322A1 (en) * | 2004-08-17 | 2006-02-22 | Applied Films GmbH & Co. KG | Support structure for a shield |
| US9957609B2 (en) * | 2011-11-30 | 2018-05-01 | Corning Incorporated | Process for making of glass articles with optical and easy-to-clean coatings |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4340462A (en) * | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
| JPS5816078A (en) * | 1981-07-17 | 1983-01-29 | Toshiba Corp | Plasma etching device |
| DE3521318A1 (en) * | 1985-06-14 | 1986-12-18 | Leybold-Heraeus GmbH, 5000 Köln | METHOD AND DEVICE FOR TREATING, IN PARTICULAR FOR COATING, SUBSTRATES BY PLASMA DISCHARGE |
| JP2762479B2 (en) * | 1988-09-19 | 1998-06-04 | 日本電気株式会社 | Magnetron type sputtering equipment |
| DE4312014A1 (en) * | 1993-04-13 | 1994-10-20 | Leybold Ag | Device for coating and/or etching substrates in a vacuum chamber |
-
1994
- 1994-03-18 JP JP4825594A patent/JPH07258839A/en active Pending
-
1995
- 1995-03-16 DE DE1995109440 patent/DE19509440A1/en not_active Ceased
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010143371A1 (en) * | 2009-06-08 | 2010-12-16 | キヤノンアネルバ株式会社 | Vacuum processing apparatus and method for manufacturing optical component |
| JP5276121B2 (en) * | 2009-06-08 | 2013-08-28 | キヤノンアネルバ株式会社 | Vacuum processing apparatus and optical component manufacturing method |
| US8926807B2 (en) | 2009-06-08 | 2015-01-06 | Canon Anelva Corporation | Vacuum processing apparatus and optical component manufacturing method |
| KR101372359B1 (en) * | 2011-12-19 | 2014-03-13 | 주식회사 테스 | Sputtering apparatus |
| CN102796998A (en) * | 2012-07-31 | 2012-11-28 | 桂林电子科技大学 | Method for operating and controlling position of nano-grating deposition substrate in vacuum vessel and device therefor |
| KR20170134743A (en) * | 2015-04-15 | 2017-12-06 | 가부시키가이샤 알박 | Substrate holding mechanism, film forming apparatus, and substrate holding method |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19509440A1 (en) | 1995-09-28 |
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