FR2703510B1 - - Google Patents
Info
- Publication number
- FR2703510B1 FR2703510B1 FR9400939A FR9400939A FR2703510B1 FR 2703510 B1 FR2703510 B1 FR 2703510B1 FR 9400939 A FR9400939 A FR 9400939A FR 9400939 A FR9400939 A FR 9400939A FR 2703510 B1 FR2703510 B1 FR 2703510B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7407693 | 1993-03-31 | ||
JP5152381A JP2804700B2 (ja) | 1993-03-31 | 1993-06-23 | 半導体装置の製造装置及び半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2703510A1 FR2703510A1 (fr) | 1994-10-07 |
FR2703510B1 true FR2703510B1 (fr) | 1997-02-21 |
Family
ID=26415213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9400939A Granted FR2703510A1 (fr) | 1993-03-31 | 1994-01-28 | Appareil et procédé de traitement de la surface d'une couche semiconductrice par plasma. |
Country Status (5)
Country | Link |
---|---|
US (2) | US5919336A (fr) |
JP (1) | JP2804700B2 (fr) |
KR (1) | KR0126892B1 (fr) |
FR (1) | FR2703510A1 (fr) |
GB (1) | GB2276764B (fr) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3328416B2 (ja) * | 1994-03-18 | 2002-09-24 | 富士通株式会社 | 半導体装置の製造方法と製造装置 |
US5679215A (en) * | 1996-01-02 | 1997-10-21 | Lam Research Corporation | Method of in situ cleaning a vacuum plasma processing chamber |
JPH10321610A (ja) * | 1997-03-19 | 1998-12-04 | Fujitsu Ltd | 半導体装置の製造方法 |
US6017414A (en) | 1997-03-31 | 2000-01-25 | Lam Research Corporation | Method of and apparatus for detecting and controlling in situ cleaning time of vacuum processing chambers |
JPH10326771A (ja) * | 1997-05-23 | 1998-12-08 | Fujitsu Ltd | 水素プラズマダウンストリーム処理装置及び水素プラズマダウンストリーム処理方法 |
JP3627451B2 (ja) * | 1997-06-04 | 2005-03-09 | 東京エレクトロン株式会社 | 表面処理方法及びその装置 |
US6706334B1 (en) | 1997-06-04 | 2004-03-16 | Tokyo Electron Limited | Processing method and apparatus for removing oxide film |
US6291868B1 (en) | 1998-02-26 | 2001-09-18 | Micron Technology, Inc. | Forming a conductive structure in a semiconductor device |
TW448499B (en) * | 1998-11-11 | 2001-08-01 | Tokyo Electron Ltd | Surface treatment method and surface treatment apparatus |
JP4612063B2 (ja) * | 1998-11-11 | 2011-01-12 | 東京エレクトロン株式会社 | 表面処理方法及びその装置 |
KR100542690B1 (ko) * | 1998-12-30 | 2006-03-28 | 주식회사 하이닉스반도체 | 반도체 소자의 실리콘 산화막 형성 방법 |
KR100322545B1 (ko) * | 1999-02-10 | 2002-03-18 | 윤종용 | 건식 세정 공정을 전 공정으로 이용하는 반도체 장치의콘택홀 채움 방법 |
JP4057198B2 (ja) * | 1999-08-13 | 2008-03-05 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
KR100572880B1 (ko) * | 2000-07-14 | 2006-04-24 | 엘지전자 주식회사 | 플라즈마를 이용한 기판의 홀가공방법 |
US6991739B2 (en) * | 2001-10-15 | 2006-01-31 | Applied Materials, Inc. | Method of photoresist removal in the presence of a dielectric layer having a low k-value |
US6680164B2 (en) | 2001-11-30 | 2004-01-20 | Applied Materials Inc. | Solvent free photoresist strip and residue removal processing for post etching of low-k films |
JP2004128281A (ja) | 2002-10-03 | 2004-04-22 | Tokyo Electron Ltd | 基板処理方法および基板処理装置 |
US7556048B2 (en) * | 2002-11-15 | 2009-07-07 | Agere Systems Inc. | In-situ removal of surface impurities prior to arsenic-doped polysilicon deposition in the fabrication of a heterojunction bipolar transistor |
US20050158667A1 (en) * | 2004-01-20 | 2005-07-21 | Applied Materials, Inc. | Solvent free photoresist strip and residue removal processing for post etching of low-k films |
US20060017043A1 (en) * | 2004-07-23 | 2006-01-26 | Dingjun Wu | Method for enhancing fluorine utilization |
WO2006035893A1 (fr) * | 2004-09-30 | 2006-04-06 | Hamamatsu Photonics K.K. | Procédé de traitement de substrat de silicium |
JP2007201067A (ja) * | 2006-01-25 | 2007-08-09 | Sekisui Chem Co Ltd | 表面処理方法及び装置 |
US7789965B2 (en) * | 2006-09-19 | 2010-09-07 | Asm Japan K.K. | Method of cleaning UV irradiation chamber |
US20080289650A1 (en) * | 2007-05-24 | 2008-11-27 | Asm America, Inc. | Low-temperature cleaning of native oxide |
WO2009057223A1 (fr) * | 2007-11-02 | 2009-05-07 | Canon Anelva Corporation | Appareil de traitement de surface et procédé de traitement de substrat |
US7871937B2 (en) | 2008-05-16 | 2011-01-18 | Asm America, Inc. | Process and apparatus for treating wafers |
JP6230954B2 (ja) * | 2014-05-09 | 2017-11-15 | 東京エレクトロン株式会社 | エッチング方法 |
WO2017210141A1 (fr) * | 2016-05-29 | 2017-12-07 | Tokyo Electron Limited | Procédé de transfert d'images de parois latérales |
US20230100863A1 (en) * | 2021-09-27 | 2023-03-30 | Applied Materials, Inc. | Water vapor plasma to enhance surface hydrophilicity |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5751265A (en) * | 1980-09-10 | 1982-03-26 | Hitachi Ltd | Microwave plasma etching device |
US4737379A (en) * | 1982-09-24 | 1988-04-12 | Energy Conversion Devices, Inc. | Plasma deposited coatings, and low temperature plasma method of making same |
KR920004171B1 (ko) * | 1984-07-11 | 1992-05-30 | 가부시기가이샤 히다찌세이사꾸쇼 | 드라이에칭장치 |
JPS61222534A (ja) * | 1985-03-28 | 1986-10-03 | Anelva Corp | 表面処理方法および装置 |
JPS62272541A (ja) * | 1986-05-20 | 1987-11-26 | Fujitsu Ltd | 半導体基板の表面処理方法 |
US4863561A (en) * | 1986-12-09 | 1989-09-05 | Texas Instruments Incorporated | Method and apparatus for cleaning integrated circuit wafers |
JPS6414218A (en) * | 1987-07-06 | 1989-01-18 | Harima Chemicals Inc | Production of highly water-absorptive resin |
US5298112A (en) * | 1987-08-28 | 1994-03-29 | Kabushiki Kaisha Toshiba | Method for removing composite attached to material by dry etching |
JP3001891B2 (ja) * | 1987-10-01 | 2000-01-24 | グンゼ株式会社 | 透明導電膜のエッチング方法及びその装置 |
US5007983A (en) * | 1988-01-29 | 1991-04-16 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Etching method for photoresists or polymers |
JPH01219184A (ja) * | 1988-02-26 | 1989-09-01 | Nippon Mining Co Ltd | 酸化第二銅粉末の製造方法 |
US5225036A (en) * | 1988-03-28 | 1993-07-06 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
JPH0277124A (ja) * | 1988-06-29 | 1990-03-16 | Tokyo Electron Ltd | ドライエッチング方法 |
DE68926855T2 (de) * | 1988-11-18 | 1997-02-13 | Shibaura Eng Works Ltd | Trockenätzverfahren |
EP0376252B1 (fr) * | 1988-12-27 | 1997-10-22 | Kabushiki Kaisha Toshiba | Méthode d'enlèvement d'une couche d'oxyde sur un substrat |
JP2890432B2 (ja) * | 1989-01-10 | 1999-05-17 | 富士通株式会社 | 有機物の灰化方法 |
JPH03129732A (ja) * | 1989-07-19 | 1991-06-03 | Matsushita Electric Ind Co Ltd | 半導体の処理方法 |
US4992134A (en) * | 1989-11-14 | 1991-02-12 | Advanced Micro Devices, Inc. | Dopant-independent polysilicon plasma etch |
US5002632A (en) * | 1989-11-22 | 1991-03-26 | Texas Instruments Incorporated | Method and apparatus for etching semiconductor materials |
JP2673380B2 (ja) * | 1990-02-20 | 1997-11-05 | 三菱電機株式会社 | プラズマエッチングの方法 |
US5089441A (en) * | 1990-04-16 | 1992-02-18 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafers |
JP2920850B2 (ja) * | 1991-03-25 | 1999-07-19 | 東京エレクトロン株式会社 | 半導体の表面処理方法及びその装置 |
JP3371143B2 (ja) * | 1991-06-03 | 2003-01-27 | ソニー株式会社 | ドライエッチング方法 |
US5326406A (en) * | 1991-07-31 | 1994-07-05 | Kawasaki Steel Corporation | Method of cleaning semiconductor substrate and apparatus for carrying out the same |
JP3084497B2 (ja) * | 1992-03-25 | 2000-09-04 | 東京エレクトロン株式会社 | SiO2膜のエッチング方法 |
-
1993
- 1993-06-23 JP JP5152381A patent/JP2804700B2/ja not_active Expired - Lifetime
-
1994
- 1994-01-27 KR KR1019940001443A patent/KR0126892B1/ko not_active IP Right Cessation
- 1994-01-28 FR FR9400939A patent/FR2703510A1/fr active Granted
- 1994-01-31 GB GB9401772A patent/GB2276764B/en not_active Expired - Fee Related
-
1997
- 1997-11-17 US US08/971,569 patent/US5919336A/en not_active Expired - Lifetime
-
1998
- 1998-10-26 US US09/178,489 patent/US6024045A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2804700B2 (ja) | 1998-09-30 |
KR0126892B1 (ko) | 1998-04-02 |
GB9401772D0 (en) | 1994-03-23 |
US5919336A (en) | 1999-07-06 |
JPH06338478A (ja) | 1994-12-06 |
FR2703510A1 (fr) | 1994-10-07 |
US6024045A (en) | 2000-02-15 |
GB2276764B (en) | 1996-11-20 |
KR940022731A (ko) | 1994-10-21 |
GB2276764A (en) | 1994-10-05 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ER | Errata listed in the french official journal (bopi) |
Free format text: 40/94 |
|
ST | Notification of lapse |
Effective date: 20091030 |