FR2689340B1 - Circuit de pompage de charge pour un generateur de tension de substrat dans un dispositif de memoire a semi-conducteur. - Google Patents

Circuit de pompage de charge pour un generateur de tension de substrat dans un dispositif de memoire a semi-conducteur.

Info

Publication number
FR2689340B1
FR2689340B1 FR9214771A FR9214771A FR2689340B1 FR 2689340 B1 FR2689340 B1 FR 2689340B1 FR 9214771 A FR9214771 A FR 9214771A FR 9214771 A FR9214771 A FR 9214771A FR 2689340 B1 FR2689340 B1 FR 2689340B1
Authority
FR
France
Prior art keywords
substrate voltage
pump circuit
voltage generator
memory device
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9214771A
Other languages
English (en)
Other versions
FR2689340A1 (fr
Inventor
Jeon Jun-Young
Jun-Young Jeon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2689340A1 publication Critical patent/FR2689340A1/fr
Application granted granted Critical
Publication of FR2689340B1 publication Critical patent/FR2689340B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Circuit de pompage de charge pour un générateur de tension de substrat. Le circuit de pompage de charge générant une tension de substrat (VB B ) a une valeur négative en effectuant deux fois l'opération de pompage de charge pendant une période inclut des capacités de pompage additionnelles (33, 35). Ainsi l'efficacité du pompage de charge est accrue et la tension de substrat (VB B ) est coupée vis-à-vis de la borne de tension de terre.
FR9214771A 1992-03-30 1992-12-08 Circuit de pompage de charge pour un generateur de tension de substrat dans un dispositif de memoire a semi-conducteur. Expired - Fee Related FR2689340B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920005285A KR950002726B1 (ko) 1992-03-30 1992-03-30 기판전압 발생기의 전하 펌프 회로

Publications (2)

Publication Number Publication Date
FR2689340A1 FR2689340A1 (fr) 1993-10-01
FR2689340B1 true FR2689340B1 (fr) 1994-06-10

Family

ID=19331105

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9214771A Expired - Fee Related FR2689340B1 (fr) 1992-03-30 1992-12-08 Circuit de pompage de charge pour un generateur de tension de substrat dans un dispositif de memoire a semi-conducteur.

Country Status (7)

Country Link
US (1) US5343088A (fr)
JP (1) JP2703706B2 (fr)
KR (1) KR950002726B1 (fr)
DE (1) DE4242804C2 (fr)
FR (1) FR2689340B1 (fr)
GB (1) GB2265770B (fr)
IT (1) ITMI923000A1 (fr)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69314164T2 (de) * 1992-11-18 1998-01-15 Oki Electric Ind Co Ltd Leistungsversorgungs-spannungerhöher
JP3643385B2 (ja) * 1993-05-19 2005-04-27 株式会社東芝 半導体回路装置
US5642073A (en) * 1993-12-06 1997-06-24 Micron Technology, Inc. System powered with inter-coupled charge pumps
US5493249A (en) * 1993-12-06 1996-02-20 Micron Technology, Inc. System powered with inter-coupled charge pumps
KR100307514B1 (ko) * 1994-07-30 2001-12-01 김영환 차지펌프회로
US5672997A (en) * 1994-09-21 1997-09-30 Intel Corporation Method and apparatus for reducing the nominal operating voltage supplied to an integrated circuit
JP3244601B2 (ja) * 1994-12-09 2002-01-07 富士通株式会社 半導体集積回路
KR0137317B1 (ko) * 1994-12-29 1998-04-29 김광호 반도체 메모리소자의 활성싸이클에서 사용되는 승압회로
KR100208443B1 (ko) * 1995-10-14 1999-07-15 김영환 네가티브 전압 구동회로
US5767736A (en) * 1995-11-27 1998-06-16 Lucent Technologies Inc. Charge pump having high switching speed and low switching noise
JP2830807B2 (ja) * 1995-11-29 1998-12-02 日本電気株式会社 半導体メモリ装置
US5920225A (en) * 1995-12-20 1999-07-06 Hyundai Electronic Industries, Co., Ltd. Negative voltage drive circuit
US6064250A (en) 1996-07-29 2000-05-16 Townsend And Townsend And Crew Llp Various embodiments for a low power adaptive charge pump circuit
US5828095A (en) * 1996-08-08 1998-10-27 Micron Technology, Inc. Charge pump
US6198339B1 (en) 1996-09-17 2001-03-06 International Business Machines Corporation CVF current reference with standby mode
US6107863A (en) * 1997-02-03 2000-08-22 Matsushita Electric Industrial Co., Ltd. Charge pump circuit and logic circuit
KR100264959B1 (ko) * 1997-04-30 2000-10-02 윤종용 반도체 장치의 고전압발생회로
KR100280434B1 (ko) * 1998-01-23 2001-03-02 김영환 고전압발생회로
US6163131A (en) * 1998-04-02 2000-12-19 The Procter & Gamble Company Battery having a built-in controller
US6074775A (en) * 1998-04-02 2000-06-13 The Procter & Gamble Company Battery having a built-in controller
US6118248A (en) * 1998-04-02 2000-09-12 The Procter & Gamble Company Battery having a built-in controller to extend battery service run time
US6198250B1 (en) 1998-04-02 2001-03-06 The Procter & Gamble Company Primary battery having a built-in controller to extend battery run time
US6835491B2 (en) 1998-04-02 2004-12-28 The Board Of Trustees Of The University Of Illinois Battery having a built-in controller
KR100294584B1 (ko) 1998-06-19 2001-09-17 윤종용 반도체메모리장치의기판바이어스전압발생회로
US6456152B1 (en) * 1999-05-17 2002-09-24 Hitachi, Ltd. Charge pump with improved reliability
DE19924568B4 (de) 1999-05-28 2014-05-22 Qimonda Ag Ladungspumpe
DE19961517A1 (de) * 1999-12-20 2001-07-05 Infineon Technologies Ag Anordnung zur Versorgung von Wortleitungen mit negativen Spannungen
US6285243B1 (en) 2000-02-23 2001-09-04 Micron Technology, Inc. High-voltage charge pump circuit
US6664846B1 (en) * 2000-08-30 2003-12-16 Altera Corporation Cross coupled N-channel negative pump
EP1472789B1 (fr) * 2002-01-23 2007-02-14 Koninklijke Philips Electronics N.V. Circuit integre et dispositif electronique alimente par accumulateur
US20050024125A1 (en) * 2003-08-01 2005-02-03 Mcnitt John L. Highly efficient, high current drive, multi-phase voltage multiplier
US6995603B2 (en) * 2004-03-03 2006-02-07 Aimtron Technology Corp. High efficiency charge pump with prevention from reverse current
US7915933B2 (en) 2006-11-30 2011-03-29 Mosaid Technologies Incorporated Circuit for clamping current in a charge pump
TW200826446A (en) * 2006-12-08 2008-06-16 Ememory Technology Inc Two-phase charge pump circuit capable of avoiding body effect
US7741898B2 (en) * 2007-01-23 2010-06-22 Etron Technology, Inc. Charge pump circuit for high voltage generation
KR101504587B1 (ko) * 2008-08-12 2015-03-23 삼성전자주식회사 음 전원전압 발생회로 및 이를 포함하는 반도체 집적회로
US7859891B2 (en) * 2008-09-30 2010-12-28 Seagate Technology Llc Static source plane in stram
US10903829B2 (en) * 2019-06-18 2021-01-26 Infineon Technologies Austria Ag Switched capacitor driving circuits for power semiconductors

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53107765U (fr) * 1977-02-04 1978-08-29
US4307333A (en) * 1980-07-29 1981-12-22 Sperry Corporation Two way regulating circuit
US4403158A (en) * 1981-05-15 1983-09-06 Inmos Corporation Two-way regulated substrate bias generator
JPS59123717U (ja) * 1983-02-10 1984-08-20 日本原子力研究所 ラチエツト座金
JPS6266656A (ja) * 1985-09-19 1987-03-26 Toshiba Corp 基板電位生成回路
JPH0750552B2 (ja) * 1985-12-20 1995-05-31 三菱電機株式会社 内部電位発生回路
DE8714849U1 (de) * 1986-12-23 1987-12-23 Jenoptik Jena Gmbh, Ddr 6900 Jena Geregelter CMOS-Substratspannungsgenerator
JP2805210B2 (ja) * 1989-06-09 1998-09-30 日本テキサス・インスツルメンツ株式会社 昇圧回路
US5059815A (en) * 1990-04-05 1991-10-22 Advanced Micro Devices, Inc. High voltage charge pumps with series capacitors
JP2805991B2 (ja) * 1990-06-25 1998-09-30 ソニー株式会社 基板バイアス発生回路
KR930008876B1 (ko) * 1990-08-17 1993-09-16 현대전자산업 주식회사 반도체소자의 고전압 발생회로
US5157278A (en) * 1990-10-30 1992-10-20 Samsung Electronics Co., Ltd. Substrate voltage generator for semiconductor device
JP2575956B2 (ja) * 1991-01-29 1997-01-29 株式会社東芝 基板バイアス回路
US5126590A (en) * 1991-06-17 1992-06-30 Micron Technology, Inc. High efficiency charge pump
KR940005691B1 (ko) * 1991-10-25 1994-06-22 삼성전자 주식회사 기판전압 발생 장치의 차아지 펌프회로

Also Published As

Publication number Publication date
GB2265770B (en) 1995-12-13
JPH05298885A (ja) 1993-11-12
JP2703706B2 (ja) 1998-01-26
KR930020448A (ko) 1993-10-19
DE4242804C2 (de) 1999-06-24
DE4242804A1 (de) 1993-10-07
ITMI923000A0 (it) 1992-12-31
US5343088A (en) 1994-08-30
FR2689340A1 (fr) 1993-10-01
GB2265770A (en) 1993-10-06
ITMI923000A1 (it) 1994-07-01
GB9227141D0 (en) 1993-02-24
KR950002726B1 (ko) 1995-03-24

Similar Documents

Publication Publication Date Title
FR2689340B1 (fr) Circuit de pompage de charge pour un generateur de tension de substrat dans un dispositif de memoire a semi-conducteur.
ATE125643T1 (de) Ladungspumpvorrichtung.
KR950015769A (ko) 반도체 메모리 장치의 전압 승압회로
FR2384387A1 (fr) Dispositif electronique de commutation a chute de tension reduite
SE511382C2 (sv) Krets och förfarande för alstring av en spänning samt användning av sådan krets
FR2356318A1 (fr) Circuit de commutation de courant a charge active
JPS5529234A (en) Power supply device
JP2985024B2 (ja) 発光素子駆動用電源回路
US5539707A (en) Electroluminescent lamp driver system
KR960703483A (ko) 일정 고전압 발생기(constant high voltage generator)
JPS554647A (en) Constant voltage circuit
JPS6453611A (en) Driver circuit
JPS60189029A (ja) 電源オンリセツト回路
FR2367381A1 (fr) Circuit pour produire un courant en dents de scie dans une bobine
FR2379878A1 (fr) Module de memoire a couplage direct de charges
SU1660160A1 (ru) Устройство для управления тиристором 2
KR950021496A (ko) 다단 펌프회로를 이용한 전압 발생기
SU445136A1 (ru) Транзисторный генератор пилообразного напр жени
JPS6069796A (ja) 表示回路
JPS56159892A (en) Semiconductor integrated circuit device
JPH02276465A (ja) チャージポンプ電圧コンバータ
JPH02306552A (ja) 二次電池充電装置
JPS6422111A (en) Semiconductor integrated circuit device
FR2394910A3 (fr) Delesteur electronique
JPS5972978A (ja) 直流・直流変換装置

Legal Events

Date Code Title Description
ST Notification of lapse