FR2644648B1 - Element amplificateur a semi-conducteur a transistor a effet de champ de type a retroaction - Google Patents
Element amplificateur a semi-conducteur a transistor a effet de champ de type a retroactionInfo
- Publication number
- FR2644648B1 FR2644648B1 FR9003415A FR9003415A FR2644648B1 FR 2644648 B1 FR2644648 B1 FR 2644648B1 FR 9003415 A FR9003415 A FR 9003415A FR 9003415 A FR9003415 A FR 9003415A FR 2644648 B1 FR2644648 B1 FR 2644648B1
- Authority
- FR
- France
- Prior art keywords
- field effect
- effect transistor
- type field
- feedback type
- semiconductor amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
- H03F3/604—Combinations of several amplifiers using FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1066901A JP2555726B2 (ja) | 1989-03-17 | 1989-03-17 | 帰還形電界効果トランジスタ増幅器 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2644648A1 FR2644648A1 (fr) | 1990-09-21 |
FR2644648B1 true FR2644648B1 (fr) | 1994-02-18 |
Family
ID=13329306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9003415A Expired - Fee Related FR2644648B1 (fr) | 1989-03-17 | 1990-03-16 | Element amplificateur a semi-conducteur a transistor a effet de champ de type a retroaction |
Country Status (4)
Country | Link |
---|---|
US (1) | US5160984A (fr) |
JP (1) | JP2555726B2 (fr) |
FR (1) | FR2644648B1 (fr) |
GB (1) | GB2230396B (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5283452A (en) * | 1992-02-14 | 1994-02-01 | Hughes Aircraft Company | Distributed cell monolithic mircowave integrated circuit (MMIC) field-effect transistor (FET) amplifier |
US6081006A (en) * | 1998-08-13 | 2000-06-27 | Cisco Systems, Inc. | Reduced size field effect transistor |
JP4754129B2 (ja) * | 2001-09-26 | 2011-08-24 | 三菱電機株式会社 | 半導体装置 |
US6642578B1 (en) | 2002-07-22 | 2003-11-04 | Anadigics, Inc. | Linearity radio frequency switch with low control voltage |
JP7239169B2 (ja) * | 2019-05-27 | 2023-03-14 | 住友電工デバイス・イノベーション株式会社 | 増幅装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3596203A (en) * | 1968-01-04 | 1971-07-27 | Nippon Electric Co | Plural transistor high frequency oscillator |
JPS5724569A (en) * | 1980-07-18 | 1982-02-09 | Mitsubishi Electric Corp | Uhf band gaas fet |
JPS5892271A (ja) * | 1981-11-27 | 1983-06-01 | Mitsubishi Electric Corp | GaAsマイクロ波モノリシツク集積回路装置 |
JPS5892272A (ja) * | 1981-11-27 | 1983-06-01 | Mitsubishi Electric Corp | 負帰還型GaAsマイクロ波モノリシツク増幅回路装置 |
FR2533777B1 (fr) * | 1982-09-24 | 1987-09-04 | Thomson Csf | Oscillateur hyperfrequence de puissance |
JPS60140907A (ja) * | 1983-12-28 | 1985-07-25 | Matsushita Electric Ind Co Ltd | 半導体集積回路 |
JPS60237709A (ja) * | 1984-05-11 | 1985-11-26 | Mitsubishi Electric Corp | モノリシツクマイクロ波増幅器 |
JPS62159907A (ja) * | 1986-01-08 | 1987-07-15 | Mitsubishi Electric Corp | モノリシツクマイクロ波増幅器 |
US4760350A (en) * | 1987-06-08 | 1988-07-26 | Hittite Microwave Corporation | Internally matched power amplifier |
US4786881A (en) * | 1987-08-27 | 1988-11-22 | General Electric Company | Amplifier with integrated feedback network |
-
1989
- 1989-03-17 JP JP1066901A patent/JP2555726B2/ja not_active Expired - Lifetime
-
1990
- 1990-03-14 GB GB9005758A patent/GB2230396B/en not_active Expired - Fee Related
- 1990-03-16 FR FR9003415A patent/FR2644648B1/fr not_active Expired - Fee Related
-
1991
- 1991-07-19 US US07/732,934 patent/US5160984A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB9005758D0 (en) | 1990-05-09 |
GB2230396B (en) | 1993-09-01 |
FR2644648A1 (fr) | 1990-09-21 |
JP2555726B2 (ja) | 1996-11-20 |
GB2230396A (en) | 1990-10-17 |
JPH02246405A (ja) | 1990-10-02 |
US5160984A (en) | 1992-11-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69208137D1 (de) | Halbleiterlaservorrichtung mit Selbstüberwachung | |
FR2633100B1 (fr) | Transistor a effet de champ et procede de fabrication | |
DE69231039D1 (de) | Halbleiteranordnungzusammenbau | |
FR2447115B1 (fr) | Amplificateur a transconductance a effet de champ | |
DE69223706D1 (de) | Feldeffekttransistor | |
DE69213702D1 (de) | Feldeffekttransistor | |
DE69131520D1 (de) | Feldeffekttransistor mit geneigtem Kanal | |
DE69228278D1 (de) | MOS-Feldeffekttransistor | |
FR2613134B1 (fr) | Dispositif semiconducteur du type transistor a effet de champ | |
DE69223193D1 (de) | Feldeffekttransistor mit Submikronbreite-Gate | |
FR2576711B1 (fr) | Transistor a effet de champ a heterojonction | |
DE69119957D1 (de) | CMOS-Speichereinrichtung mit verbesserter Leseverstärker-Steuerung | |
DE69116076D1 (de) | Heterostruktur-Feldeffekttransistor | |
DE69223719D1 (de) | Feldeffekttransistor mit isoliertem Gate vom Anreicherungstyp mit gesteuerter Anstiegszeit an der Drain-Ausgangselektrode | |
DE69423329D1 (de) | Halbleiterspeicher mit sehr schnellem Abfühlverstärker | |
DE69107828D1 (de) | Assembling-Vorrichtung. | |
FR2632775B1 (fr) | Transistor a effet de champ et procede de fabrication | |
ITMI931871A0 (it) | Circuito amplificatore perfezionato e dispositivo di memoria a semiconduttore impiegando lo stesso. | |
DE69109238D1 (de) | Feldeffekttransistor. | |
FR2644648B1 (fr) | Element amplificateur a semi-conducteur a transistor a effet de champ de type a retroaction | |
FR2626407B1 (fr) | Transistor a effet de champ a heterojonction | |
DE69214923D1 (de) | Integrierte Schaltung mit einem Verstärker mit variabler Verstärkung | |
FR2621739B1 (fr) | Transistor a effet de champ a grille schottky | |
FR2507409B1 (fr) | Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ | |
DE68925092D1 (de) | MOS-Feldeffekttransistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |