FR2627326B1 - - Google Patents
Info
- Publication number
- FR2627326B1 FR2627326B1 FR8817424A FR8817424A FR2627326B1 FR 2627326 B1 FR2627326 B1 FR 2627326B1 FR 8817424 A FR8817424 A FR 8817424A FR 8817424 A FR8817424 A FR 8817424A FR 2627326 B1 FR2627326 B1 FR 2627326B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880001556A KR910000246B1 (ko) | 1988-02-15 | 1988-02-15 | 반도체 메모리장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2627326A1 FR2627326A1 (fr) | 1989-08-18 |
| FR2627326B1 true FR2627326B1 (US20080094685A1-20080424-C00004.png) | 1995-03-10 |
Family
ID=19272250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8817424A Granted FR2627326A1 (fr) | 1988-02-15 | 1988-12-29 | Dispositif de memoire a semiconducteur |
Country Status (7)
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2936659B2 (ja) * | 1990-06-28 | 1999-08-23 | 日本電気株式会社 | ダイナミック型メモリ装置 |
| JP2994110B2 (ja) * | 1991-09-09 | 1999-12-27 | 株式会社東芝 | 半導体記憶装置 |
| KR100231140B1 (ko) * | 1991-12-16 | 1999-11-15 | 문정환 | Dram셀의트랜치캐패시터제조방법 |
| US5250829A (en) * | 1992-01-09 | 1993-10-05 | International Business Machines Corporation | Double well substrate plate trench DRAM cell array |
| JPH07112049B2 (ja) * | 1992-01-09 | 1995-11-29 | インターナショナル・ビジネス・マシーンズ・コーポレイション | ダイナミック・ランダム・アクセス・メモリ・デバイスおよび製造方法 |
| US5264716A (en) * | 1992-01-09 | 1993-11-23 | International Business Machines Corporation | Diffused buried plate trench dram cell array |
| JP2904635B2 (ja) * | 1992-03-30 | 1999-06-14 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JPH0637275A (ja) * | 1992-07-13 | 1994-02-10 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
| JP3268158B2 (ja) * | 1995-03-31 | 2002-03-25 | 株式会社東芝 | 半導体装置およびその製造方法 |
| DE19620625C1 (de) * | 1996-05-22 | 1997-10-23 | Siemens Ag | DRAM-Zellenanordnung und Verfahren zu deren Herstellung |
| US6222254B1 (en) * | 1997-03-31 | 2001-04-24 | Intel Corporation | Thermal conducting trench in a semiconductor structure and method for forming the same |
| US5885863A (en) * | 1997-03-31 | 1999-03-23 | Kabushiki Kaisha Toshiba | Method of making a contact for contacting an impurity region formed in a semiconductor substrate |
| US7067406B2 (en) * | 1997-03-31 | 2006-06-27 | Intel Corporation | Thermal conducting trench in a semiconductor structure and method for forming the same |
| US5998821A (en) * | 1997-05-21 | 1999-12-07 | Kabushiki Kaisha Toshiba | Dynamic ram structure having a trench capacitor |
| US5981332A (en) * | 1997-09-30 | 1999-11-09 | Siemens Aktiengesellschaft | Reduced parasitic leakage in semiconductor devices |
| US5943581A (en) * | 1997-11-05 | 1999-08-24 | Vanguard International Semiconductor Corporation | Method of fabricating a buried reservoir capacitor structure for high-density dynamic random access memory (DRAM) circuits |
| US5976945A (en) | 1997-11-20 | 1999-11-02 | Vanguard International Semiconductor Corporation | Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitor |
| US6008103A (en) * | 1998-02-27 | 1999-12-28 | Siemens Aktiengesellschaft | Method for forming trench capacitors in an integrated circuit |
| US6008104A (en) * | 1998-04-06 | 1999-12-28 | Siemens Aktiengesellschaft | Method of fabricating a trench capacitor with a deposited isolation collar |
| US6259129B1 (en) * | 1999-04-20 | 2001-07-10 | International Business Machines Corporation | Strap with intrinsically conductive barrier |
| US6380575B1 (en) | 1999-08-31 | 2002-04-30 | International Business Machines Corporation | DRAM trench cell |
| US6472702B1 (en) * | 2000-02-01 | 2002-10-29 | Winbond Electronics Corporation | Deep trench DRAM with SOI and STI |
| US6404000B1 (en) | 2000-06-22 | 2002-06-11 | International Business Machines Corporation | Pedestal collar structure for higher charge retention time in trench-type DRAM cells |
| US6313008B1 (en) | 2001-01-25 | 2001-11-06 | Chartered Semiconductor Manufacturing Inc. | Method to form a balloon shaped STI using a micro machining technique to remove heavily doped silicon |
| US6882000B2 (en) | 2001-08-10 | 2005-04-19 | Siliconix Incorporated | Trench MIS device with reduced gate-to-drain capacitance |
| DE10149199B4 (de) * | 2001-10-05 | 2006-05-18 | Infineon Technologies Ag | Speicherzellenfeld und Verfahren zu seiner Herstellung |
| DE10220584B3 (de) * | 2002-05-08 | 2004-01-08 | Infineon Technologies Ag | Dynamische Speicherzelle und Verfahren zum Herstellen derselben |
| DE10245534B4 (de) * | 2002-09-30 | 2005-12-22 | Infineon Technologies Ag | Teststruktur zum Bestimmen eines Bereiches einer Deep-Trench-Ausdiffusion in einem Speicherzellenfeld |
| US7518179B2 (en) | 2004-10-08 | 2009-04-14 | Freescale Semiconductor, Inc. | Virtual ground memory array and method therefor |
| US7226840B2 (en) * | 2005-07-25 | 2007-06-05 | Freescale Semiconductor, Inc. | Process for forming an electronic device including discontinuous storage elements |
| US7619270B2 (en) * | 2005-07-25 | 2009-11-17 | Freescale Semiconductor, Inc. | Electronic device including discontinuous storage elements |
| US7314798B2 (en) * | 2005-07-25 | 2008-01-01 | Freescale Semiconductor, Inc. | Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programming |
| US7262997B2 (en) * | 2005-07-25 | 2007-08-28 | Freescale Semiconductor, Inc. | Process for operating an electronic device including a memory array and conductive lines |
| US7285819B2 (en) * | 2005-07-25 | 2007-10-23 | Freescale Semiconductor, Inc. | Nonvolatile storage array with continuous control gate employing hot carrier injection programming |
| US7394686B2 (en) * | 2005-07-25 | 2008-07-01 | Freescale Semiconductor, Inc. | Programmable structure including discontinuous storage elements and spacer control gates in a trench |
| US7582929B2 (en) * | 2005-07-25 | 2009-09-01 | Freescale Semiconductor, Inc | Electronic device including discontinuous storage elements |
| US7250340B2 (en) * | 2005-07-25 | 2007-07-31 | Freescale Semiconductor, Inc. | Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trench |
| US7619275B2 (en) * | 2005-07-25 | 2009-11-17 | Freescale Semiconductor, Inc. | Process for forming an electronic device including discontinuous storage elements |
| US7112490B1 (en) * | 2005-07-25 | 2006-09-26 | Freescale Semiconductor, Inc. | Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench |
| US7256454B2 (en) * | 2005-07-25 | 2007-08-14 | Freescale Semiconductor, Inc | Electronic device including discontinuous storage elements and a process for forming the same |
| US20070020840A1 (en) * | 2005-07-25 | 2007-01-25 | Freescale Semiconductor, Inc. | Programmable structure including nanocrystal storage elements in a trench |
| US7642594B2 (en) * | 2005-07-25 | 2010-01-05 | Freescale Semiconductor, Inc | Electronic device including gate lines, bit lines, or a combination thereof |
| US7592224B2 (en) | 2006-03-30 | 2009-09-22 | Freescale Semiconductor, Inc | Method of fabricating a storage device including decontinuous storage elements within and between trenches |
| US7651916B2 (en) * | 2007-01-24 | 2010-01-26 | Freescale Semiconductor, Inc | Electronic device including trenches and discontinuous storage elements and processes of forming and using the same |
| US7838922B2 (en) * | 2007-01-24 | 2010-11-23 | Freescale Semiconductor, Inc. | Electronic device including trenches and discontinuous storage elements |
| US7572699B2 (en) * | 2007-01-24 | 2009-08-11 | Freescale Semiconductor, Inc | Process of forming an electronic device including fins and discontinuous storage elements |
| KR101967525B1 (ko) * | 2017-04-14 | 2019-04-09 | 포항공과대학교 산학협력단 | 다중 레벨의 전하 저장이 가능한 반도체 소자 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4353086A (en) * | 1980-05-07 | 1982-10-05 | Bell Telephone Laboratories, Incorporated | Silicon integrated circuits |
| JPS58137245A (ja) * | 1982-02-10 | 1983-08-15 | Hitachi Ltd | 大規模半導体メモリ |
| JPS5982761A (ja) * | 1982-11-04 | 1984-05-12 | Hitachi Ltd | 半導体メモリ |
| EP0169938B1 (en) * | 1983-12-15 | 1989-03-29 | Kabushiki Kaisha Toshiba | Semiconductor memory device having trenched capacitor |
| JPS60128658A (ja) * | 1983-12-15 | 1985-07-09 | Toshiba Corp | 半導体記憶装置 |
| JPS60152058A (ja) * | 1984-01-20 | 1985-08-10 | Toshiba Corp | 半導体記憶装置 |
| JPS60154664A (ja) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | 半導体記憶装置 |
| JPS60206163A (ja) * | 1984-03-30 | 1985-10-17 | Toshiba Corp | 半導体記憶装置 |
| KR900000170B1 (ko) * | 1984-06-05 | 1990-01-23 | 가부시끼가이샤 도오시바 | 다이내믹형 메모리셀과 그 제조방법 |
| US5170234A (en) * | 1984-07-03 | 1992-12-08 | Texas Instruments Incorporated | High density dynamic RAM with trench capacitor |
| JPS6190395A (ja) * | 1984-10-09 | 1986-05-08 | Fujitsu Ltd | 半導体記憶装置 |
| JPS61179568A (ja) * | 1984-12-29 | 1986-08-12 | Fujitsu Ltd | 半導体記憶装置の製造方法 |
| DE3681490D1 (de) * | 1985-04-01 | 1991-10-24 | Nec Corp | Dynamische speicheranordnung mit wahlfreiem zugriff mit einer vielzahl von eintransistorspeicherzellen. |
| JPS61280651A (ja) * | 1985-05-24 | 1986-12-11 | Fujitsu Ltd | 半導体記憶装置 |
| US4801989A (en) * | 1986-02-20 | 1989-01-31 | Fujitsu Limited | Dynamic random access memory having trench capacitor with polysilicon lined lower electrode |
| JPH0685428B2 (ja) * | 1986-03-14 | 1994-10-26 | 富士通株式会社 | ダイナミツクランダムアクセスメモリ |
| JPS62208663A (ja) * | 1986-03-07 | 1987-09-12 | Sony Corp | 半導体記憶装置の製造方法 |
| JPS62249473A (ja) * | 1986-04-23 | 1987-10-30 | Hitachi Ltd | 半導体記憶装置 |
| US4918502A (en) * | 1986-11-28 | 1990-04-17 | Hitachi, Ltd. | Semiconductor memory having trench capacitor formed with sheath electrode |
| GB2199695B (en) * | 1987-01-06 | 1990-07-25 | Samsung Semiconductor Inc | Dynamic random access memory with selective well biasing |
| DE3851649T2 (de) * | 1987-03-20 | 1995-05-04 | Nippon Electric Co | Aus einer Vielzahl von Eintransistorzellen bestehende dynamische Speichervorrichtung mit wahlfreiem Zugriff. |
| JP2517015B2 (ja) * | 1987-11-06 | 1996-07-24 | シャープ株式会社 | 半導体メモリの製造方法 |
-
1988
- 1988-02-15 KR KR1019880001556A patent/KR910000246B1/ko not_active IP Right Cessation
- 1988-12-26 JP JP63326412A patent/JP2510265B2/ja not_active Expired - Lifetime
- 1988-12-28 NL NL8803189A patent/NL191814C/xx not_active IP Right Cessation
- 1988-12-29 FR FR8817424A patent/FR2627326A1/fr active Granted
- 1988-12-30 DE DE3844388A patent/DE3844388A1/de active Granted
-
1989
- 1989-01-06 GB GB8900281A patent/GB2215913B/en not_active Expired - Lifetime
-
1993
- 1993-03-09 US US08/038,842 patent/US5432365A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR910000246B1 (ko) | 1991-01-23 |
| FR2627326A1 (fr) | 1989-08-18 |
| JPH027465A (ja) | 1990-01-11 |
| US5432365A (en) | 1995-07-11 |
| GB2215913B (en) | 1991-05-15 |
| JP2510265B2 (ja) | 1996-06-26 |
| KR890013775A (ko) | 1989-09-26 |
| GB8900281D0 (en) | 1989-03-08 |
| NL191814C (nl) | 1996-08-02 |
| NL191814B (nl) | 1996-04-01 |
| DE3844388C2 (US20080094685A1-20080424-C00004.png) | 1993-01-21 |
| GB2215913A (en) | 1989-09-27 |
| DE3844388A1 (de) | 1989-08-24 |
| NL8803189A (nl) | 1989-09-01 |
