FR2561042B1 - Dispositif semi-conducteur muni d'un circuit de protection electrostatique d'un circuit interne ainsi que son procede de fabrication - Google Patents

Dispositif semi-conducteur muni d'un circuit de protection electrostatique d'un circuit interne ainsi que son procede de fabrication

Info

Publication number
FR2561042B1
FR2561042B1 FR8419428A FR8419428A FR2561042B1 FR 2561042 B1 FR2561042 B1 FR 2561042B1 FR 8419428 A FR8419428 A FR 8419428A FR 8419428 A FR8419428 A FR 8419428A FR 2561042 B1 FR2561042 B1 FR 2561042B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
device provided
electrostatic protection
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8419428A
Other languages
English (en)
Other versions
FR2561042A1 (fr
Inventor
Hidetoshi Iwai
Kazumichi Mitsusada
Masamichi Ishihara
Tetsuro Matsumoto
Kazuyuki Miyazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2561042A1 publication Critical patent/FR2561042A1/fr
Application granted granted Critical
Publication of FR2561042B1 publication Critical patent/FR2561042B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
FR8419428A 1983-12-26 1984-12-19 Dispositif semi-conducteur muni d'un circuit de protection electrostatique d'un circuit interne ainsi que son procede de fabrication Expired FR2561042B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58243801A JPH0646662B2 (ja) 1983-12-26 1983-12-26 半導体装置

Publications (2)

Publication Number Publication Date
FR2561042A1 FR2561042A1 (fr) 1985-09-13
FR2561042B1 true FR2561042B1 (fr) 1988-11-10

Family

ID=17109142

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8419428A Expired FR2561042B1 (fr) 1983-12-26 1984-12-19 Dispositif semi-conducteur muni d'un circuit de protection electrostatique d'un circuit interne ainsi que son procede de fabrication

Country Status (7)

Country Link
JP (1) JPH0646662B2 (fr)
KR (1) KR930001564B1 (fr)
DE (1) DE3446928A1 (fr)
FR (1) FR2561042B1 (fr)
GB (2) GB2152284B (fr)
HK (2) HK41790A (fr)
IT (1) IT1179545B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169468A (ja) * 1986-01-22 1987-07-25 Nec Corp 半導体集積回路装置
JPS63119574A (ja) * 1986-11-07 1988-05-24 Toshiba Corp 半導体装置の製造方法
US5183773A (en) * 1989-04-13 1993-02-02 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device including such input protection transistor
US5142345A (en) * 1989-04-13 1992-08-25 Mitsubishi Denki Kabushiki Kaisha Structure of input protection transistor in semiconductor device including memory transistor having double-layered gate and method of manufacturing semiconductor device including such input protection transistor
JP2953192B2 (ja) * 1991-05-29 1999-09-27 日本電気株式会社 半導体集積回路
JP3456242B2 (ja) * 1993-01-07 2003-10-14 セイコーエプソン株式会社 半導体装置及びその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US373249A (en) * 1887-11-15 Clock
GB1170705A (en) * 1967-02-27 1969-11-12 Hitachi Ltd An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same
US3999212A (en) * 1967-03-03 1976-12-21 Hitachi, Ltd. Field effect semiconductor device having a protective diode
DE2545871B2 (de) * 1974-12-06 1980-06-19 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Feldeffekttransistor mit verbesserter Stabilität der Schwellenspannung
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
DE2940954A1 (de) * 1979-10-09 1981-04-23 Nixdorf Computer Ag, 4790 Paderborn Verfahren zur herstellung von hochspannungs-mos-transistoren enthaltenden mos-integrierten schaltkreisen sowie schaltungsanordnung zum schalten von leistungsstromkreisen unter verwendung derartiger hochspannungs-mos-transistoren
US4342045A (en) * 1980-04-28 1982-07-27 Advanced Micro Devices, Inc. Input protection device for integrated circuits
JPS5715459A (en) * 1980-07-01 1982-01-26 Fujitsu Ltd Semiconductor integrated circuit
US4366613A (en) * 1980-12-17 1983-01-04 Ibm Corporation Method of fabricating an MOS dynamic RAM with lightly doped drain
JPS57188364U (fr) * 1981-05-25 1982-11-30
JPS57211272A (en) * 1981-06-23 1982-12-25 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
GB8432417D0 (en) 1985-02-06
GB8702881D0 (en) 1987-03-18
GB2186426B (en) 1988-01-06
KR850005166A (ko) 1985-08-21
HK41790A (en) 1990-06-08
IT1179545B (it) 1987-09-16
IT8424246A0 (it) 1984-12-24
GB2186426A (en) 1987-08-12
GB2152284B (en) 1988-01-06
JPH0646662B2 (ja) 1994-06-15
DE3446928A1 (de) 1985-07-04
FR2561042A1 (fr) 1985-09-13
JPS60136374A (ja) 1985-07-19
GB2152284A (en) 1985-07-31
HK48090A (en) 1990-06-29
KR930001564B1 (ko) 1993-03-04

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Legal Events

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