FR2487576A1 - Procede de fabrication de diodes mesa glassivees - Google Patents

Procede de fabrication de diodes mesa glassivees Download PDF

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Publication number
FR2487576A1
FR2487576A1 FR8016328A FR8016328A FR2487576A1 FR 2487576 A1 FR2487576 A1 FR 2487576A1 FR 8016328 A FR8016328 A FR 8016328A FR 8016328 A FR8016328 A FR 8016328A FR 2487576 A1 FR2487576 A1 FR 2487576A1
Authority
FR
France
Prior art keywords
layer
type
conductivity
wafer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8016328A
Other languages
English (en)
French (fr)
Other versions
FR2487576B1 (cg-RX-API-DMAC7.html
Inventor
Andre Peyre-Lavigne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8016328A priority Critical patent/FR2487576A1/fr
Publication of FR2487576A1 publication Critical patent/FR2487576A1/fr
Application granted granted Critical
Publication of FR2487576B1 publication Critical patent/FR2487576B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
FR8016328A 1980-07-24 1980-07-24 Procede de fabrication de diodes mesa glassivees Granted FR2487576A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8016328A FR2487576A1 (fr) 1980-07-24 1980-07-24 Procede de fabrication de diodes mesa glassivees

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8016328A FR2487576A1 (fr) 1980-07-24 1980-07-24 Procede de fabrication de diodes mesa glassivees

Publications (2)

Publication Number Publication Date
FR2487576A1 true FR2487576A1 (fr) 1982-01-29
FR2487576B1 FR2487576B1 (cg-RX-API-DMAC7.html) 1984-05-04

Family

ID=9244486

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8016328A Granted FR2487576A1 (fr) 1980-07-24 1980-07-24 Procede de fabrication de diodes mesa glassivees

Country Status (1)

Country Link
FR (1) FR2487576A1 (cg-RX-API-DMAC7.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0085974A3 (en) * 1982-02-08 1985-12-27 Hitachi, Ltd. Method of forming a number of solder layers on a semiconductor wafer
EP0347518A1 (de) * 1988-03-28 1989-12-27 Asea Brown Boveri Ag Passivierung eines Halbleiterbauelementes
FR2676307A1 (fr) * 1991-05-06 1992-11-13 Telefunken Electronic Gmbh Procede pour fabriquer des composants a semi-conducteurs scelles par vitrification.
NL2010635A (en) * 2012-05-08 2013-11-11 Shindengen Electric Mfg Co Method of manufacturing semiconductor device and semiconductor device.
EP2717299A4 (en) * 2011-05-26 2015-04-08 Shindengen Electric Mfg GLASS COMPOSITION FOR THE PROTECTION OF A SEMICONDUCTOR CONNECTION, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3735483A (en) * 1970-03-20 1973-05-29 Gen Electric Semiconductor passivating process
JPS4923245A (cg-RX-API-DMAC7.html) * 1972-06-26 1974-03-01
FR2335951A1 (fr) * 1975-12-19 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur a surface passivee et procede d'obtention de la structure de passivation
DE2724348A1 (de) * 1976-06-08 1977-12-22 Itt Ind Gmbh Deutsche Glaspassiviertes halbleiterbauelement und verfahren zur herstellung
FR2359508A1 (fr) * 1976-07-19 1978-02-17 Silec Semi Conducteurs Nouvelle structure de diodes glassivees et son procede de fabrication
FR2382095A1 (fr) * 1977-02-24 1978-09-22 Rca Corp Structure de passivation en plusieurs couches et procede de fabrication
FR2406307A1 (fr) * 1977-10-17 1979-05-11 Radiotechnique Compelec Dispositif semiconducteur a surface passivee et procede d'obtention de ce dispositif

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3735483A (en) * 1970-03-20 1973-05-29 Gen Electric Semiconductor passivating process
JPS4923245A (cg-RX-API-DMAC7.html) * 1972-06-26 1974-03-01
FR2335951A1 (fr) * 1975-12-19 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur a surface passivee et procede d'obtention de la structure de passivation
DE2724348A1 (de) * 1976-06-08 1977-12-22 Itt Ind Gmbh Deutsche Glaspassiviertes halbleiterbauelement und verfahren zur herstellung
FR2359508A1 (fr) * 1976-07-19 1978-02-17 Silec Semi Conducteurs Nouvelle structure de diodes glassivees et son procede de fabrication
FR2382095A1 (fr) * 1977-02-24 1978-09-22 Rca Corp Structure de passivation en plusieurs couches et procede de fabrication
FR2406307A1 (fr) * 1977-10-17 1979-05-11 Radiotechnique Compelec Dispositif semiconducteur a surface passivee et procede d'obtention de ce dispositif

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0085974A3 (en) * 1982-02-08 1985-12-27 Hitachi, Ltd. Method of forming a number of solder layers on a semiconductor wafer
EP0347518A1 (de) * 1988-03-28 1989-12-27 Asea Brown Boveri Ag Passivierung eines Halbleiterbauelementes
FR2676307A1 (fr) * 1991-05-06 1992-11-13 Telefunken Electronic Gmbh Procede pour fabriquer des composants a semi-conducteurs scelles par vitrification.
EP2717299A4 (en) * 2011-05-26 2015-04-08 Shindengen Electric Mfg GLASS COMPOSITION FOR THE PROTECTION OF A SEMICONDUCTOR CONNECTION, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
NL2010635A (en) * 2012-05-08 2013-11-11 Shindengen Electric Mfg Co Method of manufacturing semiconductor device and semiconductor device.
FR2990561A1 (fr) * 2012-05-08 2013-11-15 Shindengen Electric Mfg Procede de fabrication de dispositif semi-conducteur et dispositif semi-conducteur;

Also Published As

Publication number Publication date
FR2487576B1 (cg-RX-API-DMAC7.html) 1984-05-04

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