FR2359508A1 - Nouvelle structure de diodes glassivees et son procede de fabrication - Google Patents

Nouvelle structure de diodes glassivees et son procede de fabrication

Info

Publication number
FR2359508A1
FR2359508A1 FR7621990A FR7621990A FR2359508A1 FR 2359508 A1 FR2359508 A1 FR 2359508A1 FR 7621990 A FR7621990 A FR 7621990A FR 7621990 A FR7621990 A FR 7621990A FR 2359508 A1 FR2359508 A1 FR 2359508A1
Authority
FR
France
Prior art keywords
trench
metal
protective substance
semiconductor diode
slice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7621990A
Other languages
English (en)
Other versions
FR2359508B1 (fr
Inventor
Pierre Rossetti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silec Semi Conducteurs SA
Original Assignee
Silec Semi Conducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs SA filed Critical Silec Semi Conducteurs SA
Priority to FR7621990A priority Critical patent/FR2359508A1/fr
Publication of FR2359508A1 publication Critical patent/FR2359508A1/fr
Application granted granted Critical
Publication of FR2359508B1 publication Critical patent/FR2359508B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)

Abstract

La présente invention concerne une nouvelle structure de diodes glassivées et son procédé de fabrication. Au cours de la fabrication d'une diode comprenant des couches P,N, et N**+1, 2 et 3, un sillon est creusé sur la face supérieure traversant la jonction PN et ce sillon est rempli d'un agent de glassivation 4 en même temps q'un agent de glassivation 10 est déposé en regard de ce sillon sur la face inférieure. Après une étape de recuit, il est donc formé une zone glassivée dans le sillon et une zone glassivée en sur-épaisseur sur la face opposée. Il est ensuite procédé au dépôt de couches de métallisation 5 et de soudure 6 puis l'une des glassivations 4 ou 10 est rayée et la tranche divisée en puces constituant des diodes élementaires. La présente invention s'applique aux diodes de puissance, aux diode rapides, aux diodes Zener, etc.
FR7621990A 1976-07-19 1976-07-19 Nouvelle structure de diodes glassivees et son procede de fabrication Granted FR2359508A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7621990A FR2359508A1 (fr) 1976-07-19 1976-07-19 Nouvelle structure de diodes glassivees et son procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7621990A FR2359508A1 (fr) 1976-07-19 1976-07-19 Nouvelle structure de diodes glassivees et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR2359508A1 true FR2359508A1 (fr) 1978-02-17
FR2359508B1 FR2359508B1 (fr) 1982-04-30

Family

ID=9175870

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7621990A Granted FR2359508A1 (fr) 1976-07-19 1976-07-19 Nouvelle structure de diodes glassivees et son procede de fabrication

Country Status (1)

Country Link
FR (1) FR2359508A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2452786A1 (fr) * 1979-03-30 1980-10-24 Silicium Semiconducteur Ssc Procede de montage par soudage d'une pastille semi-conductrice sur un radiateur et dispositif obtenu
FR2487576A1 (fr) * 1980-07-24 1982-01-29 Thomson Csf Procede de fabrication de diodes mesa glassivees
EP0085974A2 (fr) * 1982-02-08 1983-08-17 Hitachi, Ltd. Procédé de formation d'une pluralité de zones de brasure sur une plaquette semi-conductrice

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2096669A1 (fr) * 1970-05-19 1972-02-25 Gen Electric
FR2156819A1 (fr) * 1971-10-22 1973-06-01 Rca Corp

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2096669A1 (fr) * 1970-05-19 1972-02-25 Gen Electric
FR2156819A1 (fr) * 1971-10-22 1973-06-01 Rca Corp

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2452786A1 (fr) * 1979-03-30 1980-10-24 Silicium Semiconducteur Ssc Procede de montage par soudage d'une pastille semi-conductrice sur un radiateur et dispositif obtenu
FR2487576A1 (fr) * 1980-07-24 1982-01-29 Thomson Csf Procede de fabrication de diodes mesa glassivees
EP0085974A2 (fr) * 1982-02-08 1983-08-17 Hitachi, Ltd. Procédé de formation d'une pluralité de zones de brasure sur une plaquette semi-conductrice
EP0085974A3 (en) * 1982-02-08 1985-12-27 Hitachi, Ltd. Method of forming a number of solder layers on a semiconductor wafer

Also Published As

Publication number Publication date
FR2359508B1 (fr) 1982-04-30

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Legal Events

Date Code Title Description
ST Notification of lapse