JPS5627926A - Electrode formation of semiconductor device - Google Patents

Electrode formation of semiconductor device

Info

Publication number
JPS5627926A
JPS5627926A JP10480779A JP10480779A JPS5627926A JP S5627926 A JPS5627926 A JP S5627926A JP 10480779 A JP10480779 A JP 10480779A JP 10480779 A JP10480779 A JP 10480779A JP S5627926 A JPS5627926 A JP S5627926A
Authority
JP
Japan
Prior art keywords
layer
rugged
junction
semiconductor substrate
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10480779A
Other languages
Japanese (ja)
Inventor
Toshio Yao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10480779A priority Critical patent/JPS5627926A/en
Publication of JPS5627926A publication Critical patent/JPS5627926A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent the peeling off of a plating layer of electrode in a semiconductor device from the surface of an evaporation layer by a method wherein the evaporation layer formed on a semiconductor substrate is made to be a rugged face, and a plating layer is formed on it to form a multilayer. CONSTITUTION:From the main face being close to a P-N junction of a semiconductor substrate 3 being formed with the P-N junction, grooves 4 are formed being extended crossing over the P-N junction, and glass films 5 for glass passivation are formed on the surface of the grooves 4. Al is evaporated on the both main faces of the semiconductor substrate 3, and the surface of an Al layer 8 is made to be rugged by sandblast. A nickel layer 9 of electroless plating is formed on the rugged face of aluminum layer, and the unnecessary part of aluminum layer 8 and nickel layer 9 are removed to form a wafer for diode. As the aluminum layer is made to have rugged face, the strength of adhesion with the nickel layer can be elevated.
JP10480779A 1979-08-16 1979-08-16 Electrode formation of semiconductor device Pending JPS5627926A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10480779A JPS5627926A (en) 1979-08-16 1979-08-16 Electrode formation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10480779A JPS5627926A (en) 1979-08-16 1979-08-16 Electrode formation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5627926A true JPS5627926A (en) 1981-03-18

Family

ID=14390687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10480779A Pending JPS5627926A (en) 1979-08-16 1979-08-16 Electrode formation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5627926A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019412A (en) * 2005-07-11 2007-01-25 Denso Corp Semiconductor device and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019412A (en) * 2005-07-11 2007-01-25 Denso Corp Semiconductor device and its manufacturing method

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