FR2452786A1 - Procede de montage par soudage d'une pastille semi-conductrice sur un radiateur et dispositif obtenu - Google Patents

Procede de montage par soudage d'une pastille semi-conductrice sur un radiateur et dispositif obtenu

Info

Publication number
FR2452786A1
FR2452786A1 FR7908089A FR7908089A FR2452786A1 FR 2452786 A1 FR2452786 A1 FR 2452786A1 FR 7908089 A FR7908089 A FR 7908089A FR 7908089 A FR7908089 A FR 7908089A FR 2452786 A1 FR2452786 A1 FR 2452786A1
Authority
FR
France
Prior art keywords
thin layer
semiconductor
heat sink
perimeter
soldering system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7908089A
Other languages
English (en)
Inventor
Pierre Rossetti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SILICIUM SEMICONDUCTEUR SSC
Original Assignee
SILICIUM SEMICONDUCTEUR SSC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SILICIUM SEMICONDUCTEUR SSC filed Critical SILICIUM SEMICONDUCTEUR SSC
Priority to FR7908089A priority Critical patent/FR2452786A1/fr
Publication of FR2452786A1 publication Critical patent/FR2452786A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
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    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
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    • H01L2924/01057—Lanthanum [La]
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    • H01L2924/01058—Cerium [Ce]
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    • H01L2924/01074—Tungsten [W]
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

LA PRESENTE INVENTION CONCERNE UN PROCEDE DE MONTAGE PAR SOUDAGE DE DISPOSITIFS A SEMI-CONDUCTEUR SUR UN RADIATEUR ET LE DISPOSITIF OBTENU. UNE DIODE 1 EST MUNIE SUR SA FACE INTERIEURE D'UNE COURONNE 16 D'EPAISSEUR CONSTANTE CONSTITUEE D'UN DEPOT DE VERRE. LE SOUDAGE DE LA DIODE 1 SUR LE RADIATEUR 2 EST EFFECTUE TOUT EN EXERCANT UNE PRESSION SUR LA DIODE POUR QUE LA COURONNE 16 VIENNE EN CONTACT AVEC LA SURFACE DU RADIATEUR, LA SOUDURE EN EXCES ETANT CHASSEE. APPLICATION AUX SEMI-CONDUCTEURS DE PUISSANCE.
FR7908089A 1979-03-30 1979-03-30 Procede de montage par soudage d'une pastille semi-conductrice sur un radiateur et dispositif obtenu Withdrawn FR2452786A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7908089A FR2452786A1 (fr) 1979-03-30 1979-03-30 Procede de montage par soudage d'une pastille semi-conductrice sur un radiateur et dispositif obtenu

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7908089A FR2452786A1 (fr) 1979-03-30 1979-03-30 Procede de montage par soudage d'une pastille semi-conductrice sur un radiateur et dispositif obtenu

Publications (1)

Publication Number Publication Date
FR2452786A1 true FR2452786A1 (fr) 1980-10-24

Family

ID=9223772

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7908089A Withdrawn FR2452786A1 (fr) 1979-03-30 1979-03-30 Procede de montage par soudage d'une pastille semi-conductrice sur un radiateur et dispositif obtenu

Country Status (1)

Country Link
FR (1) FR2452786A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082800A (en) * 1990-03-07 1992-01-21 Mitsubishi Denki Kabushiki Kaisha Method of forming pattern in manufacturing semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1226715B (de) * 1961-02-15 1966-10-13 Philips Patentverwaltung Halbleiterbauelement mit einem flaechenhaft an Stromzufuehrungen angeloeteten Halbleiterelement und Verfahren zu seiner Herstellung
FR2359508A1 (fr) * 1976-07-19 1978-02-17 Silec Semi Conducteurs Nouvelle structure de diodes glassivees et son procede de fabrication
FR2390005A1 (fr) * 1977-05-02 1978-12-01 Philips Nv

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1226715B (de) * 1961-02-15 1966-10-13 Philips Patentverwaltung Halbleiterbauelement mit einem flaechenhaft an Stromzufuehrungen angeloeteten Halbleiterelement und Verfahren zu seiner Herstellung
FR2359508A1 (fr) * 1976-07-19 1978-02-17 Silec Semi Conducteurs Nouvelle structure de diodes glassivees et son procede de fabrication
FR2390005A1 (fr) * 1977-05-02 1978-12-01 Philips Nv

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082800A (en) * 1990-03-07 1992-01-21 Mitsubishi Denki Kabushiki Kaisha Method of forming pattern in manufacturing semiconductor device

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