JPS5736852A - Circuit substrate and manufacture thereof - Google Patents
Circuit substrate and manufacture thereofInfo
- Publication number
- JPS5736852A JPS5736852A JP11241780A JP11241780A JPS5736852A JP S5736852 A JPS5736852 A JP S5736852A JP 11241780 A JP11241780 A JP 11241780A JP 11241780 A JP11241780 A JP 11241780A JP S5736852 A JPS5736852 A JP S5736852A
- Authority
- JP
- Japan
- Prior art keywords
- projection
- pad
- inner lead
- hardness
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/79—Apparatus for Tape Automated Bonding [TAB]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
PURPOSE:To enable the fixture of an inner lead to the pad of an IC at a low temperature under high pressure by hardening the hardness of the inner lead secured to the pad of the IC harder than copper. CONSTITUTION:Gold is plated partly or entirely on the projection 111 of an inner lead 100 in such a manner that the strength is higher than 90 of Vickers hardness, gold is thinly plated on the aluminum surface of an aluminum wire 202 on the IC pad 200, the projection 101 and the IC pad 200 are positioned, and are thermally pressed. Since the hardness of the projection is thus hardened, the projection is not crushed, and is not accordingly contacted with an insulating film 201, thereby eliminating the damage of the film, and since the pressure can be enhanced at the time of thermally pressing, its temperature can be lowered, thereby eliminating the damage under the aluminum wire. Since the crushed amount of the projection is constant, the contacting area can be constant and the projection can be stably bonded.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11241780A JPS5736852A (en) | 1980-08-15 | 1980-08-15 | Circuit substrate and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11241780A JPS5736852A (en) | 1980-08-15 | 1980-08-15 | Circuit substrate and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5736852A true JPS5736852A (en) | 1982-02-27 |
Family
ID=14586121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11241780A Pending JPS5736852A (en) | 1980-08-15 | 1980-08-15 | Circuit substrate and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5736852A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61134228A (en) * | 1984-12-04 | 1986-06-21 | Diafoil Co Ltd | Manufacture of biaxial oriented polyester film |
EP0917211A3 (en) * | 1997-11-17 | 1999-11-17 | Canon Kabushiki Kaisha | Moldless semiconductor device and photovoltaic device module making use of the same |
-
1980
- 1980-08-15 JP JP11241780A patent/JPS5736852A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61134228A (en) * | 1984-12-04 | 1986-06-21 | Diafoil Co Ltd | Manufacture of biaxial oriented polyester film |
JPH0449452B2 (en) * | 1984-12-04 | 1992-08-11 | Daiafoil | |
EP0917211A3 (en) * | 1997-11-17 | 1999-11-17 | Canon Kabushiki Kaisha | Moldless semiconductor device and photovoltaic device module making use of the same |
US6316832B1 (en) * | 1997-11-17 | 2001-11-13 | Canon Kabushiki Kaisha | Moldless semiconductor device and photovoltaic device module making use of the same |
AU753126B2 (en) * | 1997-11-17 | 2002-10-10 | Canon Kabushiki Kaisha | Moldless semiconductor device and photovoltaic device module making use of the same |
KR100401313B1 (en) * | 1997-11-17 | 2003-11-15 | 캐논 가부시끼가이샤 | Moldless semiconductor device and photovoltaic device module making use of the same |
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