JPS5624956A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPS5624956A JPS5624956A JP10144679A JP10144679A JPS5624956A JP S5624956 A JPS5624956 A JP S5624956A JP 10144679 A JP10144679 A JP 10144679A JP 10144679 A JP10144679 A JP 10144679A JP S5624956 A JPS5624956 A JP S5624956A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- high reliability
- prevent
- particle layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE:To seal the semiconductor device with resin in high reliability by interposing an insulating particle layer between a semiconductor element and a resin sealing agent to absorb strain owing to thermal expansion. CONSTITUTION:Wires 6 are connected onto bonding pads 4, and particular or fibrous insulating layer 8 is then formed on the surface of a semiconductor element in a thickness of approx. 50-500mu. It is then heat treated, is thus fixed, and is subsequently sealed on the entire surface including a metallic substrate 1 with resin 7. In this configuration insulating particle layer 8 absorbs thermal strain to prevent the deterioration of the characteristics of the element and to also prevent the isolation of the bonded wires, thereby obtaining the semiconductor device in high reliability.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10144679A JPS5624956A (en) | 1979-08-08 | 1979-08-08 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10144679A JPS5624956A (en) | 1979-08-08 | 1979-08-08 | Resin-sealed semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5624956A true JPS5624956A (en) | 1981-03-10 |
Family
ID=14300909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10144679A Pending JPS5624956A (en) | 1979-08-08 | 1979-08-08 | Resin-sealed semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5624956A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5045918A (en) * | 1986-12-19 | 1991-09-03 | North American Philips Corp. | Semiconductor device with reduced packaging stress |
US5171716A (en) * | 1986-12-19 | 1992-12-15 | North American Philips Corp. | Method of manufacturing semiconductor device with reduced packaging stress |
WO2017050702A1 (en) * | 2015-09-23 | 2017-03-30 | Siemens Aktiengesellschaft | Method for electrically insulating an electrical conductor, in particular a component module, conductor module, and component module |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4979686A (en) * | 1972-12-07 | 1974-08-01 |
-
1979
- 1979-08-08 JP JP10144679A patent/JPS5624956A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4979686A (en) * | 1972-12-07 | 1974-08-01 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5045918A (en) * | 1986-12-19 | 1991-09-03 | North American Philips Corp. | Semiconductor device with reduced packaging stress |
US5171716A (en) * | 1986-12-19 | 1992-12-15 | North American Philips Corp. | Method of manufacturing semiconductor device with reduced packaging stress |
WO2017050702A1 (en) * | 2015-09-23 | 2017-03-30 | Siemens Aktiengesellschaft | Method for electrically insulating an electrical conductor, in particular a component module, conductor module, and component module |
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