JPS54101263A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54101263A JPS54101263A JP796778A JP796778A JPS54101263A JP S54101263 A JPS54101263 A JP S54101263A JP 796778 A JP796778 A JP 796778A JP 796778 A JP796778 A JP 796778A JP S54101263 A JPS54101263 A JP S54101263A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- semiconductor device
- bonding
- rade
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45001—Core members of the connector
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
- H01L2224/48453—Shape of the interface with the bonding area
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48624—Aluminium (Al) as principal constituent
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
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- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Abstract
PURPOSE: To reduce the wire open and loose contact due to the removed junction, by improving the wire bonding for the surface of semiconductor device.
CONSTITUTION: The gold with thin wire 7 is connected to the bonding rade of the aluminum thin film 6 of rectangular shape formed on the surface of semiconductor element with vacuum evaporation by means of nail head thermal pressing method.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP796778A JPS54101263A (en) | 1978-01-26 | 1978-01-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP796778A JPS54101263A (en) | 1978-01-26 | 1978-01-26 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54101263A true JPS54101263A (en) | 1979-08-09 |
Family
ID=11680225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP796778A Pending JPS54101263A (en) | 1978-01-26 | 1978-01-26 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54101263A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59172745A (en) * | 1983-03-22 | 1984-09-29 | Matsushita Electronics Corp | Semiconductor device and electrode formation thereof |
JPH0423149U (en) * | 1990-06-13 | 1992-02-26 |
-
1978
- 1978-01-26 JP JP796778A patent/JPS54101263A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59172745A (en) * | 1983-03-22 | 1984-09-29 | Matsushita Electronics Corp | Semiconductor device and electrode formation thereof |
JPH0473292B2 (en) * | 1983-03-22 | 1992-11-20 | Matsushita Electronics Corp | |
JPH0423149U (en) * | 1990-06-13 | 1992-02-26 |
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