FR2478376A1 - Dispositif semi-conducteur du type cellule de memorisation a transistor a enrichissement et resistance, et son procede de fabrication - Google Patents
Dispositif semi-conducteur du type cellule de memorisation a transistor a enrichissement et resistance, et son procede de fabrication Download PDFInfo
- Publication number
- FR2478376A1 FR2478376A1 FR8104986A FR8104986A FR2478376A1 FR 2478376 A1 FR2478376 A1 FR 2478376A1 FR 8104986 A FR8104986 A FR 8104986A FR 8104986 A FR8104986 A FR 8104986A FR 2478376 A1 FR2478376 A1 FR 2478376A1
- Authority
- FR
- France
- Prior art keywords
- region
- type
- semiconductor
- semiconductor device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 84
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 210000000352 storage cell Anatomy 0.000 title description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 36
- 229910052710 silicon Inorganic materials 0.000 abstract description 36
- 239000010703 silicon Substances 0.000 abstract description 36
- 239000000758 substrate Substances 0.000 abstract description 8
- 230000010354 integration Effects 0.000 abstract description 7
- 229910052594 sapphire Inorganic materials 0.000 abstract description 4
- 239000010980 sapphire Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 15
- 239000004020 conductor Substances 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 210000004027 cell Anatomy 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241000208202 Linaceae Species 0.000 description 1
- 235000004431 Linum usitatissimum Nutrition 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76272—Vertical isolation by lateral overgrowth techniques, i.e. ELO techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76281—Lateral isolation by selective oxidation of silicon
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3129180A JPS56126936A (en) | 1980-03-12 | 1980-03-12 | Semiconductor device and production thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2478376A1 true FR2478376A1 (fr) | 1981-09-18 |
FR2478376B1 FR2478376B1 ( ) | 1983-12-23 |
Family
ID=12327197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8104986A Granted FR2478376A1 (fr) | 1980-03-12 | 1981-03-12 | Dispositif semi-conducteur du type cellule de memorisation a transistor a enrichissement et resistance, et son procede de fabrication |
Country Status (4)
Country | Link |
---|---|
US (1) | US4447823A ( ) |
JP (1) | JPS56126936A ( ) |
DE (1) | DE3109074A1 ( ) |
FR (1) | FR2478376A1 ( ) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS582068A (ja) * | 1981-06-26 | 1983-01-07 | Toshiba Corp | 半導体装置およびその製造方法 |
JPS5812365A (ja) * | 1981-07-15 | 1983-01-24 | Japan Electronic Ind Dev Assoc<Jeida> | 薄膜トランジスタ及びその製造方法 |
US4897698A (en) * | 1984-10-31 | 1990-01-30 | Texas Instruments Incorporated | Horizontal structure thin film transistor |
US4751554A (en) * | 1985-09-27 | 1988-06-14 | Rca Corporation | Silicon-on-sapphire integrated circuit and method of making the same |
US4758529A (en) * | 1985-10-31 | 1988-07-19 | Rca Corporation | Method of forming an improved gate dielectric for a MOSFET on an insulating substrate |
US4735917A (en) * | 1986-04-28 | 1988-04-05 | General Electric Company | Silicon-on-sapphire integrated circuits |
US4722912A (en) * | 1986-04-28 | 1988-02-02 | Rca Corporation | Method of forming a semiconductor structure |
US4755481A (en) * | 1986-05-15 | 1988-07-05 | General Electric Company | Method of making a silicon-on-insulator transistor |
US4989061A (en) * | 1986-09-05 | 1991-01-29 | General Electric Company | Radiation hard memory cell structure with drain shielding |
US5019525A (en) * | 1987-08-18 | 1991-05-28 | Texas Instruments Incorporated | Method for forming a horizontal self-aligned transistor |
US5736777A (en) * | 1995-12-29 | 1998-04-07 | Intel Corporation | Method and apparatus for fast self-destruction of a CMOS integrated circuit |
JP3260660B2 (ja) * | 1996-08-22 | 2002-02-25 | 株式会社東芝 | 半導体装置およびその製造方法 |
EP1020920B1 (en) * | 1999-01-11 | 2010-06-02 | Sel Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a driver TFT and a pixel TFT on a common substrate |
US6225666B1 (en) * | 1999-10-29 | 2001-05-01 | National Semiconductor Corporation | Low stress active area silicon island structure with a non-rectangular cross-section profile and method for its formation |
JP2002246600A (ja) * | 2001-02-13 | 2002-08-30 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3767945A (en) * | 1971-02-05 | 1973-10-23 | Siemens Ag | Circuit and construction of semiconductor storage elements |
GB2005073A (en) * | 1977-09-22 | 1979-04-11 | Rca Corp | Planar silicon-on-sapphire integrated circuits and method for producing such integrated circuits |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52101967A (en) * | 1976-02-23 | 1977-08-26 | Agency Of Ind Science & Technol | Semiconductor device |
US4087902A (en) * | 1976-06-23 | 1978-05-09 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Field effect transistor and method of construction thereof |
JPS5327278A (en) * | 1976-08-27 | 1978-03-14 | Hitachi Ltd | Device for energizing electric discharge lamp |
DE2643931A1 (de) * | 1976-09-29 | 1978-03-30 | Siemens Ag | In integrierter technik hergestellter baustein |
US4169746A (en) * | 1977-04-28 | 1979-10-02 | Rca Corp. | Method for making silicon on sapphire transistor utilizing predeposition of leads |
JPS54130883A (en) * | 1978-04-01 | 1979-10-11 | Agency Of Ind Science & Technol | Production of semiconductor device |
US4320312A (en) * | 1978-10-02 | 1982-03-16 | Hewlett-Packard Company | Smaller memory cells and logic circuits |
JPS55160457A (en) * | 1979-03-30 | 1980-12-13 | Toshiba Corp | Semiconductor device |
US4253162A (en) * | 1979-08-28 | 1981-02-24 | Rca Corporation | Blocked source node field-effect circuitry |
-
1980
- 1980-03-12 JP JP3129180A patent/JPS56126936A/ja active Pending
-
1981
- 1981-03-05 US US06/240,850 patent/US4447823A/en not_active Expired - Lifetime
- 1981-03-10 DE DE19813109074 patent/DE3109074A1/de active Granted
- 1981-03-12 FR FR8104986A patent/FR2478376A1/fr active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3767945A (en) * | 1971-02-05 | 1973-10-23 | Siemens Ag | Circuit and construction of semiconductor storage elements |
GB2005073A (en) * | 1977-09-22 | 1979-04-11 | Rca Corp | Planar silicon-on-sapphire integrated circuits and method for producing such integrated circuits |
Non-Patent Citations (3)
Title |
---|
ERXBK/79 * |
EXBK/73 * |
EXBK/77 * |
Also Published As
Publication number | Publication date |
---|---|
DE3109074C2 ( ) | 1989-04-06 |
US4447823A (en) | 1984-05-08 |
JPS56126936A (en) | 1981-10-05 |
DE3109074A1 (de) | 1982-02-25 |
FR2478376B1 ( ) | 1983-12-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2478376A1 (fr) | Dispositif semi-conducteur du type cellule de memorisation a transistor a enrichissement et resistance, et son procede de fabrication | |
FR2472246A1 (fr) | Cellule programmable pour reseaux electroniques programmables | |
FR2544537A1 (fr) | Dispositif de memoire a semi-conducteurs du type memoire dynamique a acces direct ou aleatoire (dram) a haute densite d'integration et procede de fabrication d'un tel dispositif | |
FR2670316A1 (fr) | Procede de fabrication d'un dispositif de memoire morte a masque. | |
KR950030267A (ko) | 실리사이드 반응을 이용하는 반도체 디바이스 | |
FR2632453A1 (fr) | Cellule de memoire dram a condensateur a empilage et procede pour fabriquer une telle cellule | |
US20220108997A1 (en) | Low-voltage flash memory integrated with a vertical field effect transistor | |
FR3045938A1 (fr) | Circuit integre cointegrant un transistor fet et un point memoire rram | |
US20210167129A1 (en) | Resistive random access memory integrated with vertical transport field effect transistors | |
FR2490860A1 (fr) | Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit | |
EP1483793B1 (fr) | Diode schottky de puissance a substrat sicoi, et procede de realisation d'une telle diode | |
FR2496342A1 (fr) | Dispositif semi-conducteur du type metal-oxyde-semi-conducteur et son procede de fabrication | |
FR2655774A1 (fr) | Perfectionnement aux transistors de puissance en materiaux iii-v sur substrat silicium et procede de fabrication. | |
EP0624943B1 (fr) | Composant limiteur de courant série | |
JPH0756884B2 (ja) | 半導体素子の製造方法 | |
EP0190243B1 (fr) | Procede de fabrication d'un circuit integre de type mis | |
WO2002056370A1 (fr) | Circuit integre et procede de fabrication | |
FR2884346A1 (fr) | Dispositif de memoire du type programmable une fois, et procede de programmation | |
FR2674372A1 (fr) | Structure d'interconnexion dans un dispositif a semiconducteurs et son procede de fabrication. | |
EP1042818B1 (fr) | Dispositif de mémoire multiniveaux à blocage de Coulomb et méthodes correspondantes de fabrication et d'opération | |
FR3063573A1 (fr) | Dispositif fusible integre | |
EP1166362A1 (fr) | Nouveau dispositif semi-conducteur combinant les avantages des architectures massive et soi, et procede de fabrication | |
FR2491678A1 (fr) | Procede de fabrication d'un transistor a effet de champ et dispositif obtenu selon ce procede | |
EP3404730B1 (fr) | Memoire non volatile favorisant une grande densite d'integration | |
US11605673B2 (en) | Dual resistive random-access memory with two transistors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
ST | Notification of lapse |