FR2464536B1 - Memoire semi-conductrice a grille flottante, programmable electriquement, et son procede de fabrication - Google Patents

Memoire semi-conductrice a grille flottante, programmable electriquement, et son procede de fabrication

Info

Publication number
FR2464536B1
FR2464536B1 FR8019082A FR8019082A FR2464536B1 FR 2464536 B1 FR2464536 B1 FR 2464536B1 FR 8019082 A FR8019082 A FR 8019082A FR 8019082 A FR8019082 A FR 8019082A FR 2464536 B1 FR2464536 B1 FR 2464536B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor memory
electrically programmable
floating grid
programmable floating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8019082A
Other languages
English (en)
Other versions
FR2464536A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of FR2464536A1 publication Critical patent/FR2464536A1/fr
Application granted granted Critical
Publication of FR2464536B1 publication Critical patent/FR2464536B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
FR8019082A 1979-09-04 1980-09-04 Memoire semi-conductrice a grille flottante, programmable electriquement, et son procede de fabrication Expired FR2464536B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/072,504 US4376947A (en) 1979-09-04 1979-09-04 Electrically programmable floating gate semiconductor memory device

Publications (2)

Publication Number Publication Date
FR2464536A1 FR2464536A1 (fr) 1981-03-06
FR2464536B1 true FR2464536B1 (fr) 1985-11-08

Family

ID=22108027

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8019082A Expired FR2464536B1 (fr) 1979-09-04 1980-09-04 Memoire semi-conductrice a grille flottante, programmable electriquement, et son procede de fabrication

Country Status (4)

Country Link
US (1) US4376947A (fr)
JP (1) JPS5664469A (fr)
DE (1) DE3033333A1 (fr)
FR (1) FR2464536B1 (fr)

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US4514897A (en) * 1979-09-04 1985-05-07 Texas Instruments Incorporated Electrically programmable floating gate semiconductor memory device
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USRE32800E (en) * 1981-12-30 1988-12-13 Sgs-Thomson Microelectronics, Inc. Method of making mosfet by multiple implantations followed by a diffusion step
US4599118A (en) * 1981-12-30 1986-07-08 Mostek Corporation Method of making MOSFET by multiple implantations followed by a diffusion step
JPS5994873A (ja) * 1982-11-22 1984-05-31 Nissan Motor Co Ltd Ｍｏｓトランジスタ
US4769340A (en) * 1983-11-28 1988-09-06 Exel Microelectronics, Inc. Method for making electrically programmable memory device by doping the floating gate by implant
JPS60182174A (ja) * 1984-02-28 1985-09-17 Nec Corp 不揮発性半導体メモリ
KR930007195B1 (ko) * 1984-05-23 1993-07-31 가부시끼가이샤 히다찌세이사꾸쇼 반도체 장치와 그 제조 방법
US5352620A (en) * 1984-05-23 1994-10-04 Hitachi, Ltd. Method of making semiconductor device with memory cells and peripheral transistors
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
KR890004962B1 (ko) * 1985-02-08 1989-12-02 가부시끼가이샤 도오시바 반도체장치 및 그 제조방법
US4649629A (en) * 1985-07-29 1987-03-17 Thomson Components - Mostek Corp. Method of late programming a read only memory
KR900000065B1 (ko) * 1985-08-13 1990-01-19 가부시끼가이샤 도오시바 독출전용 반도체기억장치와 그 제조방법
JP3059442B2 (ja) * 1988-11-09 2000-07-04 株式会社日立製作所 半導体記憶装置
JP2555027B2 (ja) * 1986-05-26 1996-11-20 株式会社日立製作所 半導体記憶装置
US5189497A (en) * 1986-05-26 1993-02-23 Hitachi, Ltd. Semiconductor memory device
US4758869A (en) * 1986-08-29 1988-07-19 Waferscale Integration, Inc. Nonvolatile floating gate transistor structure
US5034786A (en) * 1986-08-29 1991-07-23 Waferscale Integration, Inc. Opaque cover for preventing erasure of an EPROM
US4835740A (en) * 1986-12-26 1989-05-30 Kabushiki Kaisha Toshiba Floating gate type semiconductor memory device
DE3880860T2 (de) * 1987-03-04 1993-10-28 Toshiba Kawasaki Kk Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung.
US4874715A (en) * 1987-05-20 1989-10-17 Texas Instruments Incorporated Read only memory with improved channel length control and method of forming
US4861730A (en) * 1988-01-25 1989-08-29 Catalyst Semiconductor, Inc. Process for making a high density split gate nonvolatile memory cell
US5067111A (en) * 1988-10-28 1991-11-19 Kabushiki Kaisha Toshiba Semiconductor memory device having a majority logic for determining data to be read out
US5341329A (en) * 1988-12-28 1994-08-23 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device capable of preventing read error caused by overerase state and method therefor
US5844842A (en) 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
IT1228720B (it) * 1989-03-15 1991-07-03 Sgs Thomson Microelectronics Matrice a tovaglia di celle di memoria eprom con giunzioni sepolte, accessibili singolarmente mediante decodifica tradizionale.
US5081054A (en) * 1989-04-03 1992-01-14 Atmel Corporation Fabrication process for programmable and erasable MOS memory device
US5045489A (en) * 1989-06-30 1991-09-03 Texas Instruments Incorporated Method of making a high-speed 2-transistor cell for programmable/EEPROM devices with separate read and write transistors
US5172200A (en) * 1990-01-12 1992-12-15 Mitsubishi Denki Kabushiki Kaisha MOS memory device having a LDD structure and a visor-like insulating layer
US5111270A (en) * 1990-02-22 1992-05-05 Intel Corporation Three-dimensional contactless non-volatile memory cell
IT1239707B (it) * 1990-03-15 1993-11-15 St Microelectrics Srl Processo per la realizzazione di una cella di memoria rom a bassa capacita' di drain
US5266509A (en) * 1990-05-11 1993-11-30 North American Philips Corporation Fabrication method for a floating-gate field-effect transistor structure
US5032881A (en) * 1990-06-29 1991-07-16 National Semiconductor Corporation Asymmetric virtual ground EPROM cell and fabrication method
US5355332A (en) * 1990-10-23 1994-10-11 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with an array of one-transistor memory cells
US5424567A (en) * 1991-05-15 1995-06-13 North American Philips Corporation Protected programmable transistor with reduced parasitic capacitances and method of fabrication
US5264384A (en) * 1991-08-30 1993-11-23 Texas Instruments Incorporated Method of making a non-volatile memory cell
EP0575688B1 (fr) * 1992-06-26 1998-05-27 STMicroelectronics S.r.l. Programmation des cellules LDD-ROM
US5349225A (en) * 1993-04-12 1994-09-20 Texas Instruments Incorporated Field effect transistor with a lightly doped drain
US5378909A (en) * 1993-10-18 1995-01-03 Hughes Aircraft Company Flash EEPROM cell having gap between floating gate and drain for high hot electron injection efficiency for programming
US5677215A (en) * 1993-11-17 1997-10-14 Lg Semicon Co., Ltd. Method of fabricating a nonvolatile semiconductor memory device
DE4340592C2 (de) * 1993-11-29 2002-04-18 Gold Star Electronics Verfahren zum Herstellen eines nichtflüchtigen Halbleiterspeichers und einen nach diesem Verfahren hergestellten Halbleiterspeicher
JP2848223B2 (ja) * 1993-12-01 1999-01-20 日本電気株式会社 不揮発性半導体記憶装置の消去方法及び製造方法
JP2806234B2 (ja) * 1993-12-13 1998-09-30 日本電気株式会社 半導体装置及びその製造方法
EP0748521B1 (fr) * 1994-03-03 2001-11-07 Rohm Corporation Detection de sureffacement dans une cellule memoire flash eeprom mono-transistor basse tension programmable et effa able selon le procede fowler-nordheim
JP3461998B2 (ja) * 1995-03-24 2003-10-27 セイコーインスツルメンツ株式会社 電気的書き換え可能な半導体不揮発性メモリ装置とその製造方法
US5822242A (en) * 1997-03-05 1998-10-13 Macronix International Co, Ltd. Asymmetric virtual ground p-channel flash cell with latid n-type pocket and method of fabrication therefor
US6069382A (en) * 1998-02-11 2000-05-30 Cypress Semiconductor Corp. Non-volatile memory cell having a high coupling ratio
US6284598B1 (en) * 1999-01-12 2001-09-04 Agere Systems Guardian Corp. Method of manufacturing a flash memory cell having inter-poly-dielectric isolation
US6913980B2 (en) * 2003-06-30 2005-07-05 Texas Instruments Incorporated Process method of source drain spacer engineering to improve transistor capacitance
US7009248B2 (en) * 2003-10-02 2006-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with asymmetric pocket implants
US20060131634A1 (en) * 2004-12-21 2006-06-22 Tzu-Hsuan Hsu Non-volatile memory, non-volatile memory cell and operation thereof
US9287879B2 (en) * 2011-06-07 2016-03-15 Verisiti, Inc. Semiconductor device having features to prevent reverse engineering

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US3623023A (en) * 1967-12-01 1971-11-23 Sperry Rand Corp Variable threshold transistor memory using pulse coincident writing
US3881180A (en) * 1971-11-30 1975-04-29 Texas Instruments Inc Non-volatile memory cell
US3882469A (en) * 1971-11-30 1975-05-06 Texas Instruments Inc Non-volatile variable threshold memory cell
US3868187A (en) * 1972-08-31 1975-02-25 Tokyo Shibaura Electric Co Avalanche injection type mos memory
FR2380639A2 (fr) * 1976-09-29 1978-09-08 Siemens Ag Transistor a effet de champ de memorisation a canal n
US4161039A (en) * 1976-12-15 1979-07-10 Siemens Aktiengesellschaft N-Channel storage FET
JPS5912419B2 (ja) * 1976-12-16 1984-03-23 株式会社東芝 テ−ブル装置
FR2375692A1 (fr) * 1976-12-27 1978-07-21 Texas Instruments Inc Memoire semi-conductrice a grilles flottantes, programmable electriquement
US4112509A (en) * 1976-12-27 1978-09-05 Texas Instruments Incorporated Electrically alterable floating gate semiconductor memory device
US4122544A (en) * 1976-12-27 1978-10-24 Texas Instruments Incorporated Electrically alterable floating gate semiconductor memory device with series enhancement transistor
US4151021A (en) * 1977-01-26 1979-04-24 Texas Instruments Incorporated Method of making a high density floating gate electrically programmable ROM
JPS5397381A (en) * 1977-02-07 1978-08-25 Toshiba Corp Nonvoltile semiconductor memory
JPS5419372A (en) * 1977-07-14 1979-02-14 Nec Corp Production of semiconductor memory
US4258378A (en) * 1978-05-26 1981-03-24 Texas Instruments Incorporated Electrically alterable floating gate memory with self-aligned low-threshold series enhancement transistor
US4222063A (en) * 1978-05-30 1980-09-09 American Microsystems VMOS Floating gate memory with breakdown voltage lowering region
US4302766A (en) * 1979-01-05 1981-11-24 Texas Instruments Incorporated Self-limiting erasable memory cell with triple level polysilicon
US4317273A (en) * 1979-11-13 1982-03-02 Texas Instruments Incorporated Method of making high coupling ratio DMOS electrically programmable ROM

Also Published As

Publication number Publication date
US4376947A (en) 1983-03-15
FR2464536A1 (fr) 1981-03-06
JPS5664469A (en) 1981-06-01
DE3033333A1 (de) 1981-04-09
DE3033333C2 (fr) 1992-01-30

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