FR2457564A1 - Transistor pnp pour circuit integre bipolaire et son procede de fabrication - Google Patents

Transistor pnp pour circuit integre bipolaire et son procede de fabrication

Info

Publication number
FR2457564A1
FR2457564A1 FR7913205A FR7913205A FR2457564A1 FR 2457564 A1 FR2457564 A1 FR 2457564A1 FR 7913205 A FR7913205 A FR 7913205A FR 7913205 A FR7913205 A FR 7913205A FR 2457564 A1 FR2457564 A1 FR 2457564A1
Authority
FR
France
Prior art keywords
type
zones
pnp transistor
integrated circuit
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7913205A
Other languages
English (en)
French (fr)
Other versions
FR2457564B1 (enExample
Inventor
Christian Combes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7913205A priority Critical patent/FR2457564A1/fr
Priority to IT12546/80A priority patent/IT1133421B/it
Priority to DE19803019898 priority patent/DE3019898A1/de
Publication of FR2457564A1 publication Critical patent/FR2457564A1/fr
Application granted granted Critical
Publication of FR2457564B1 publication Critical patent/FR2457564B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR7913205A 1979-05-23 1979-05-23 Transistor pnp pour circuit integre bipolaire et son procede de fabrication Granted FR2457564A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7913205A FR2457564A1 (fr) 1979-05-23 1979-05-23 Transistor pnp pour circuit integre bipolaire et son procede de fabrication
IT12546/80A IT1133421B (it) 1979-05-23 1980-05-22 Transistore pnp per circuito integrato bipolare e suo procedimento di fabbricazione
DE19803019898 DE3019898A1 (de) 1979-05-23 1980-05-23 Pnp-transistor fuer bipolare integrierte schaltung und verfahren zur herstellung des transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7913205A FR2457564A1 (fr) 1979-05-23 1979-05-23 Transistor pnp pour circuit integre bipolaire et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR2457564A1 true FR2457564A1 (fr) 1980-12-19
FR2457564B1 FR2457564B1 (enExample) 1983-06-10

Family

ID=9225817

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7913205A Granted FR2457564A1 (fr) 1979-05-23 1979-05-23 Transistor pnp pour circuit integre bipolaire et son procede de fabrication

Country Status (3)

Country Link
DE (1) DE3019898A1 (enExample)
FR (1) FR2457564A1 (enExample)
IT (1) IT1133421B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2592526A1 (fr) * 1985-12-31 1987-07-03 Radiotechnique Compelec Circuit integre comportant un transistor lateral

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2028146A1 (enExample) * 1969-01-11 1970-10-09 Philips Nv
FR2123118A1 (enExample) * 1971-01-13 1972-09-08 Radiotechnique Compelec
US3936329A (en) * 1975-02-03 1976-02-03 Texas Instruments Incorporated Integral honeycomb-like support of very thin single crystal slices
DE2651449A1 (de) * 1975-11-24 1977-05-26 Ibm Verfahren zur herstellung komplementaerer transistoren in integrierter halbleitertechnik
FR2339254A1 (fr) * 1976-01-23 1977-08-19 Itt Transistor planaire de circuit de logique a injection integree (i2l)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3197710A (en) * 1963-05-31 1965-07-27 Westinghouse Electric Corp Complementary transistor structure
CH446188A (de) * 1966-01-15 1967-10-31 Tagers Gmbh Verfahren und Vorrichtung zum Erfassen und Vereinzeln der Bleche eines Blechstapels, sowie zum Transportieren der einzelnen Bleche zu einer Arbeitsstelle

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2028146A1 (enExample) * 1969-01-11 1970-10-09 Philips Nv
FR2123118A1 (enExample) * 1971-01-13 1972-09-08 Radiotechnique Compelec
US3936329A (en) * 1975-02-03 1976-02-03 Texas Instruments Incorporated Integral honeycomb-like support of very thin single crystal slices
DE2651449A1 (de) * 1975-11-24 1977-05-26 Ibm Verfahren zur herstellung komplementaerer transistoren in integrierter halbleitertechnik
FR2339254A1 (fr) * 1976-01-23 1977-08-19 Itt Transistor planaire de circuit de logique a injection integree (i2l)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/70 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2592526A1 (fr) * 1985-12-31 1987-07-03 Radiotechnique Compelec Circuit integre comportant un transistor lateral

Also Published As

Publication number Publication date
IT1133421B (it) 1986-07-09
FR2457564B1 (enExample) 1983-06-10
IT8012546A0 (it) 1980-05-22
DE3019898A1 (de) 1980-12-04

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Legal Events

Date Code Title Description
ST Notification of lapse