IT1133421B - Transistore pnp per circuito integrato bipolare e suo procedimento di fabbricazione - Google Patents
Transistore pnp per circuito integrato bipolare e suo procedimento di fabbricazioneInfo
- Publication number
- IT1133421B IT1133421B IT12546/80A IT1254680A IT1133421B IT 1133421 B IT1133421 B IT 1133421B IT 12546/80 A IT12546/80 A IT 12546/80A IT 1254680 A IT1254680 A IT 1254680A IT 1133421 B IT1133421 B IT 1133421B
- Authority
- IT
- Italy
- Prior art keywords
- integrated circuit
- pnp transistor
- manufacturing procedure
- bipolar integrated
- bipolar
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
- H10D62/135—Non-interconnected multi-emitter structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7913205A FR2457564A1 (fr) | 1979-05-23 | 1979-05-23 | Transistor pnp pour circuit integre bipolaire et son procede de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8012546A0 IT8012546A0 (it) | 1980-05-22 |
| IT1133421B true IT1133421B (it) | 1986-07-09 |
Family
ID=9225817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT12546/80A IT1133421B (it) | 1979-05-23 | 1980-05-22 | Transistore pnp per circuito integrato bipolare e suo procedimento di fabbricazione |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE3019898A1 (enExample) |
| FR (1) | FR2457564A1 (enExample) |
| IT (1) | IT1133421B (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2592526B1 (fr) * | 1985-12-31 | 1988-10-14 | Radiotechnique Compelec | Circuit integre comportant un transistor lateral |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3197710A (en) * | 1963-05-31 | 1965-07-27 | Westinghouse Electric Corp | Complementary transistor structure |
| CH446188A (de) * | 1966-01-15 | 1967-10-31 | Tagers Gmbh | Verfahren und Vorrichtung zum Erfassen und Vereinzeln der Bleche eines Blechstapels, sowie zum Transportieren der einzelnen Bleche zu einer Arbeitsstelle |
| NL162511C (nl) * | 1969-01-11 | 1980-05-16 | Philips Nv | Geintegreerde halfgeleiderschakeling met een laterale transistor en werkwijze voor het vervaardigen van de geintegreerde halfgeleiderschakeling. |
| FR2123118B1 (enExample) * | 1971-01-13 | 1976-05-28 | Radiotechnique Compelec | |
| US3936329A (en) * | 1975-02-03 | 1976-02-03 | Texas Instruments Incorporated | Integral honeycomb-like support of very thin single crystal slices |
| IT1070023B (it) * | 1975-11-24 | 1985-03-25 | Ibm | Processo di fabbricazione di transistori complementari |
| DE2602395C3 (de) * | 1976-01-23 | 1978-10-12 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integrierter I2 L-Planartransistor und Verfahren zu seiner Herstellung |
-
1979
- 1979-05-23 FR FR7913205A patent/FR2457564A1/fr active Granted
-
1980
- 1980-05-22 IT IT12546/80A patent/IT1133421B/it active
- 1980-05-23 DE DE19803019898 patent/DE3019898A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| FR2457564A1 (fr) | 1980-12-19 |
| FR2457564B1 (enExample) | 1983-06-10 |
| IT8012546A0 (it) | 1980-05-22 |
| DE3019898A1 (de) | 1980-12-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970530 |