FR2455365A1 - Dispositif semiconducteur electroluminescent et son procede de fabrication - Google Patents

Dispositif semiconducteur electroluminescent et son procede de fabrication

Info

Publication number
FR2455365A1
FR2455365A1 FR8008776A FR8008776A FR2455365A1 FR 2455365 A1 FR2455365 A1 FR 2455365A1 FR 8008776 A FR8008776 A FR 8008776A FR 8008776 A FR8008776 A FR 8008776A FR 2455365 A1 FR2455365 A1 FR 2455365A1
Authority
FR
France
Prior art keywords
semiconductor device
manufacturing
electroluminescent semiconductor
monocristalline
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8008776A
Other languages
English (en)
Other versions
FR2455365B1 (fr
Inventor
Rudolf Paulus Tijburg
Teunis Van Dongen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2455365A1 publication Critical patent/FR2455365A1/fr
Application granted granted Critical
Publication of FR2455365B1 publication Critical patent/FR2455365B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Abstract

PROCEDE POUR LA REALISATION D'UN DISPOSITIF SEMICONDUCTEUR ELECTROLUMINESCENT, SELON LEQUEL DES COUCHES MONOCRISTALLINES 3, 4, 5, 6 PARMI LESQUELLES UNE COUCHE ACTIVE 4 SONT FORMEES PAR CROISSANCE SUR UNE FACE PRINCIPALE D'UN SUBSTRAT 2 ET LES COUCHES SONTSOUMISES A DECAPAGE A L'AIDE D'UN MASQUE DE FACON A OBTENIR DES FACES REFLECTRICES 9, QUI DELIMITENT DES REGIONS ACTIVES 10 DANS LA DIRECTION LONGITUDINALE, CARACTERISE EN CE QU'APRES LE DECAPAGE, UNE COUCHE MONOCRISTALLINE EPITAXIALE PROTECTRICE 11 EST FORMEE PAR CROISSANCE SUR LES FACES REFLECHISSANTES 9. APPLICATION: LASERS SEMICONDUCTEURS.
FR8008776A 1979-04-24 1980-04-18 Dispositif semiconducteur electroluminescent et son procede de fabrication Granted FR2455365A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7903197A NL7903197A (nl) 1979-04-24 1979-04-24 Werkwijze voor het vervaardigen van een elektrolumines- cerende halfgeleiderinrichting en elektroluminescerende halfgeleiderinrichting vervaardigd volgens de werkwijze

Publications (2)

Publication Number Publication Date
FR2455365A1 true FR2455365A1 (fr) 1980-11-21
FR2455365B1 FR2455365B1 (fr) 1985-02-15

Family

ID=19833037

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8008776A Granted FR2455365A1 (fr) 1979-04-24 1980-04-18 Dispositif semiconducteur electroluminescent et son procede de fabrication

Country Status (7)

Country Link
US (1) US4341010A (fr)
JP (1) JPS55143082A (fr)
DE (1) DE3015422A1 (fr)
FR (1) FR2455365A1 (fr)
GB (1) GB2047962B (fr)
IT (1) IT1140886B (fr)
NL (1) NL7903197A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
US4751708A (en) * 1982-03-29 1988-06-14 International Business Machines Corporation Semiconductor injection lasers
GB8406432D0 (en) * 1984-03-12 1984-04-18 British Telecomm Semiconductor devices
GB8413170D0 (en) * 1984-05-23 1984-06-27 British Telecomm Production of semiconductor devices
CA1247947A (fr) * 1984-07-31 1989-01-03 Masaru Wada Methode de fabrication de dispositifs a semiconducteur
US4652333A (en) * 1985-06-19 1987-03-24 Honeywell Inc. Etch process monitors for buried heterostructures
JP2822195B2 (ja) * 1989-01-19 1998-11-11 ソニー株式会社 半導体レーザーの製造方法
JPH02199892A (ja) * 1989-01-27 1990-08-08 Nec Corp 半導体レーザの製造方法
US5179035A (en) * 1989-09-15 1993-01-12 U.S. Philips Corporation Method of fabricating two-terminal non-linear devices
DE4427840A1 (de) * 1994-07-28 1996-02-01 Osa Elektronik Gmbh Verfahren zur Effizienzerhöhung von A¶I¶¶I¶¶I¶B¶V¶ - Halbleiter-Chips
US6355567B1 (en) * 1999-06-30 2002-03-12 International Business Machines Corporation Retrograde openings in thin films
KR100529632B1 (ko) * 2003-10-01 2005-11-17 동부아남반도체 주식회사 반도체 소자 및 그 제조 방법
US7141486B1 (en) * 2005-06-15 2006-11-28 Agere Systems Inc. Shallow trench isolation structures comprising a graded doped sacrificial silicon dioxide material and a method for forming shallow trench isolation structures
CN112968099B (zh) * 2020-08-06 2022-02-25 重庆康佳光电技术研究院有限公司 一种氧化铝图形化方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2200533A1 (fr) * 1972-09-25 1974-04-19 Western Electric Co

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2168936B1 (fr) * 1972-01-27 1977-04-01 Labo Electronique Physique
US3824493A (en) * 1972-09-05 1974-07-16 Bell Telephone Labor Inc Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror
US3865646A (en) * 1972-09-25 1975-02-11 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US4121177A (en) * 1973-05-28 1978-10-17 Hitachi, Ltd. Semiconductor device and a method of fabricating the same
JPS5269285A (en) * 1975-12-05 1977-06-08 Matsushita Electric Ind Co Ltd Semiconductor laser device
US4178564A (en) * 1976-01-15 1979-12-11 Rca Corporation Half wave protection layers on injection lasers
US4171234A (en) * 1976-07-20 1979-10-16 Matsushita Electric Industrial Co., Ltd. Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles
NL7609607A (nl) * 1976-08-30 1978-03-02 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US4230997A (en) * 1979-01-29 1980-10-28 Bell Telephone Laboratories, Incorporated Buried double heterostructure laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2200533A1 (fr) * 1972-09-25 1974-04-19 Western Electric Co

Also Published As

Publication number Publication date
US4341010A (en) 1982-07-27
DE3015422A1 (de) 1980-11-06
GB2047962A (en) 1980-12-03
DE3015422C2 (fr) 1987-12-03
JPS55143082A (en) 1980-11-08
NL7903197A (nl) 1980-10-28
FR2455365B1 (fr) 1985-02-15
IT8021530A0 (it) 1980-04-21
GB2047962B (en) 1983-04-20
IT1140886B (it) 1986-10-10

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Legal Events

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ST Notification of lapse